<?xml version="1.0" encoding="utf-8"?>
<!DOCTYPE eagle SYSTEM "eagle.dtd">
<eagle version="6.2">
<drawing>
<board>
<plain>
<wire x1="0" y1="0" x2="35.54" y2="0" width="0" layer="20"/>
<wire x1="35.54" y1="0" x2="35.56" y2="35.56" width="0" layer="20"/>
<wire x1="35.56" y1="35.56" x2="0" y2="35.56" width="0" layer="20"/>
<wire x1="0" y1="35.56" x2="0" y2="0" width="0" layer="20"/>
</plain>
<libraries>
<library name="transistor-fet">
<description>&lt;b&gt;Field Effect Transistors&lt;/b&gt;&lt;p&gt;
&lt;author&gt;Created by librarian@cadsoft.de&lt;/author&gt;&lt;p&gt;
&lt;p&gt;
Symbols changed according to IEC617&lt;p&gt; 
All types, packages and assignment to symbols and pins checked&lt;p&gt;
Package outlines partly checked&lt;p&gt;
&lt;p&gt;
JFET = junction FET&lt;p&gt;
IGBT-x = insulated gate bipolar transistor&lt;p&gt;
x=N: NPN; x=P: PNP&lt;p&gt;
IGFET-mc-nnn; (IGFET=insulated gate field effect transistor)&lt;P&gt;
m=D: depletion mode (Verdr&amp;auml;ngungstyp)&lt;p&gt;
m=E: enhancement mode (Anreicherungstyp)&lt;p&gt;
c: N=N-channel; P=P-Channel&lt;p&gt;
GDSB: gate, drain, source, bulk&lt;p&gt;
&lt;p&gt;
by R. Vogg  15.March.2002</description>
<packages>
<package name="TOP3">
<description>&lt;b&gt;TOP 3 horizontal&lt;/b&gt;</description>
</package>
<package name="TO220">
<description>&lt;b&gt;TO 220 horizontal&lt;/b&gt;</description>
</package>
</packages>
</library>
</libraries>
<attributes>
</attributes>
<variantdefs>
</variantdefs>
<elements>
<element name="Q4" library="transistor-fet" package="TOP3" value="BUZ382">
<attribute name="NAME"/>
<attribute name="VALUE"/>
</element>
<element name="Q3" library="transistor-fet" package="TO220" value="IRF540">
<attribute name="NAME"/>
<attribute name="VALUE"/>
</element>
</elements>
<signals>
<signal name="GND">
<contactref element="Q3" pad="3"/>
<contactref element="Q4" pad="3"/>
<contactref element="Q3" pad="1"/>
<contactref element="Q4" pad="1"/>
</signal>
</signals>
</board>
</drawing>
</eagle>
