*************************** BBS3002 SPICE PARAMETER ************************* *.LIB BBS3002 * DATE : 2014/05/29 * Temp = 27 deg * W = 36720000 E-6 m * L = 1.0 E-6 m * AD = 36720000 E-12 m2 * RG = 10 ohm * RB = 0.001 ohm .MODEL BBS3002 PMOS ( LEVEL = 8 +VERSION = 3.2 TNOM = 27 TOX = 6.0E-08 +VTH0 = -2.22 K1 = 3.2 K2 = -0.04 +NLX = 1.70E-07 DVT0 = 1.12 DVT1 = 0.38 +DVT2 = -0.01 U0 = 230 UA = 8.00E-10 +UB = 1.00E-21 VSAT = 1.25E05 A0 = 0.00E00 +AGS = -1.00 A1 = 0 A2 = 1 +RDSW = 8.00E06 PRWG = -0.014 WR = 1.22 +WINT = 0 LINT = -1.00E-07 VOFF = -0.08 +NFACTOR = 0.72 CIT = 0 CDSC = 2.40E-04 +CDSCD = 0 ETA0 = 1.00 DSUB = 0.96 +PCLM = 0.10 PDIBLC1 = 1.00 PDIBLC2 = 1.00E-02 +DROUT = 0.96 PSCBE1 = 4.00E09 PSCBE2 = 1.00E-06 +PVAG = 0.01 DELTA = 0.024 NGATE = 1.0E19 +MOBMOD = 1 NQSMOD = 0 NOIMOD = 1 +CAPMOD = 3 XPART = 0.5 CGSO = 4.00E-11 +CGDO = 1.00E-12 CGBO = 0 CGSL = 0 +CGDL = 4.00E-10 CKAPPA = 1.20 CF = 0 +CLC = 3.0E-09 CLE = 0.8 DWC = 0 +DLC = -1.00E-11 NOFF = 1.5 VOFFCV = -0.40 +ACDE = 1.0 MOIN = 15 CJ = 1.00E-04 +MJ = 0.30 PB = 0.80 JS = 1.00E-07 +NJ = 1.00 XTI = 3.0 IJTH = 0 +KT1 = -0.1 UTE = -0.1 PRT = 1.50E07 +AT = 3.3E04 ) * *.ENDL BBS3002 * Device Expression Example * Electrode = Drain Gate Source * Mxxx Drain Gin Source Body BBS3002 W=36720000E-6 L=1.0E-6 AD=36720000E-12 * RG Gate Gin 10 * RB Body Source 0.001 * Information herein is for example only; * it is not guaranteed for volume production. * ON Semiconductor *LTspice subckt .subckt BBS3002 D G S M1 D Gin S B BBS3002 W=36720000E-6 L=1.0E-6 AD=36720000E-12 RG G Gin 10 RB B S 0.001 .ends