* SPICE model rectifier diode ***EM518*** * Use the symbol file ***em518.asy*** * * (c) Diotec Semiconductor AG * www.diotec.com * 2017-11-23 * ********************************************************* * This model is for simulation purposes only. It does * * not replace reviewing of the data sheet nor real life * * testing of the part inside the application. * ********************************************************* * .subckt EM518 A K params: Vrrm=2000 Vrsm=2000 Ir=5u Irsm=5u Vf=1.1 Ifav=1 Rs=.05 trr=1500n Cj=15p Eg=1.11 Xti=3 * Above values are an example for the ***EM518***. Using the symbol * above symbol file allows for direct insertion of other values * according to these data sheet parameters: * * Vrrm Repetitive peak reverse voltage * Ir Leakage current * Vrsm Surge peak reverse voltage / Reverse avalanche breakdown voltage * Irsm Defined at avalanche diodes, otherwise set Irsm = Ir * Vf Forward voltage * Ifav Test current for Vf, usually equal to average forward rectified current * trr Reverse recovery time; for Schottky, set trr=5n * Cj Junction capacitance at 4V * * Activation energy: Eg=1.11 for Si (pn) rectifier, Eg=.69 for Schottky (metal barrier) rectifier * Series resistance: Rs=(Vf@3*Ifav - Vf@Ifav)/(3*Ifav - Ifav) from data sheet curve * Sat.-current temp. exp: Xti=3 for Si (pn) rectifier, Xti=2 for Schottky (metal barrier) rectifier D A K Rectifier .model Rectifier D(Is={Ir/40} Bv={Vrsm*1.05} Ibv={Ir} Vpk=Vrrm N={.8*Vf/25m/(ln(Ifav)-ln(Ir/40))} Rs={Rs} Eg={Eg} Xti={Xti} Iave={Ifav} Cjo={Cj*2} M=.33 Tt={trr} Vp=.5 mfg=Diotec type=Rectifier) .ends