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Übersicht Microchip GaN-on-Si RF Power Transistoren
17.5 dB typ Drain Eff.: 63% typ Bias: 50 V, Idq 300 µA, 300 µs, 10% Package: 55-VHE 1011GN-1200V 1030/1090 MHz 1200 W 75% efficiency KEY FEATURES Power Gain: 22 dB typ Drain Eff.: 75% Bias: 50 V, Idq 32 µA, 32 µs, 10% Package: 55-Q3 1214GN-1200VG 1200-1400 MHz 1200 W high power KEY FEATURES Power Gain
