3.3 kΩ, T = 125 °C All Min. 0.2 V GD D DRM L j (2) IH IT= 500 mA Max. 25 50 mA I - III - IV Max. 40 60 IL IG= 1.2 GT mA II Max. 80 120 DS2114 - Rev 11 page 2/18 T1610, T1635, T1650, BTA16, BTB16 Characteristics BTA16 BTB16 Symbol Parameters Quadrant Unit C B (2) dV/dt V D 67 % V DRM gate open, j = 125 °C Min. 200 400 V/µs (dV/dt)c2) (dI/dt)c = 7 A/msj T = 125 °C Min. 5 10 V/µs 1. Minimum IGT is guaranteed at 5 % GT Ix. 2. For both polarities of A2 referenced
