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Nahaufnahme einer Leiterplatte mit elektronischen Bauteilen
U5 D7 D8 J4 M3G C3 +5V JUMPER R10 C12 R17 D11 ULN2003APG CHINA 331AEC LM358N CHINA R5 C4 R2 JUMPER J11 J15 J13 J14 FANx,LAMPx
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Werbeflyer für Rockchip RK182X AI Coprozessor
Multi-core Performance (FPS) YOLOv5s 640*640 35.4 212.6 ResNet50V2 224*224 113.7 851.3 DINOv2 224*224 54.8 331.0 DepthAnythingV2 448*256 / 27.3 FastLM_1_5B 512*512 144 48.19 148.47 Qwen2.5-VL-3B 392*392 274.8 84.69 70.0 Qwen2.5-VL-7B 392*392 279.34 159.4 89.69 Qwen3-VL-4B 384*384 158.89 108.29 Applications:
in „EmbeddedWorld 2026, Tag 1 – AI fressen Elektronik auf“ · Mikrocontroller und Digitale Elektronik · · Fotos
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100807728a.pdf
® Product Manual Standard models ST2000LM015 ST1000LM048 ST500LM030 100807728, Rev. A September 2016 Document Revision History Revision Date Pages affectedand Description ofchange Rev. A 09/06/2016 Initial release a © 2016SeagateTechnologyLLC.Allrightsreserved
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T-3.pdf
manual 4-2 Motor 8pole, 3phase,brushless DC motor 4-3 Driving Method Direct drive 4-4 Turntable Platter 331mm dia.Aluminum diecast 4-5 Speeds 33 /3and 45rpm and 78rpm 4-6 Wow and Flutter Less than 0.15% WRMS (JIS WTD) with 33 / rpm3 4-7 S/N Ratio More than 60dB (DIN-B) 4-8 Pitch Controls +/- 8%,+/- 12%,+/
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6ff78f.pdf
3 0-15-0103 RESISTOR 10K (SMD) 39 58,73,79,85,86,91,92,95,96,142,146,242,256,280,290, 305,319,330,331,332 3 0-15-0104 RESISTOR 100K (SMD) 4 R220,222,324,333 3 0-15-0105 RESISTOR 1M (SMD) 8 R231,232,234,235,254,255,260,261 R3,4,5,11,16,17,18,23,26,43,49,50,53,60,61,67,80,160 3 0-15-0121 RESISTOR 120O
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MS-17631_2.0.pdf
D D D A A A A A A LVDS_U3_P 45 LVDS_TXU1P_R_JNC 5 5 25 25 LVDS_TXL2P_R_JNC <14> LVDS_RST# 0R0402 R331 RESET_L 30 OSC_INT LVDS_CLKU_P 43 LVDS_TXUCKP LVDS_TXU0N_R_JNC 7 7 27 27 LVDS_TXL1N_R_JNC X_C3.3u6.3X0805 LVLVDS_M2_P 41 LVDS_TXU2NN LVDS_TXLCKN_R_JNC 9 9 29 29 LVDS_TXL0N_R_JNC 54 NC_4 ▯ LVDS_U1_P
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technical.pdf
equation. In parallel to each of them there are additional leakage currents: −V IL = ILK · 1 − exp φ (11.331) LK ∂I L IL −V G L = ∂V = φ · exp φ (11.332) LK LK 166 The non-linear gate-source and gate-drain charges and capacitances are modeled with the following equations. Q GG = 2·Q GS = 2·Q GD = Q gl +tQ