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ds1820.pdf
NUMBER Y Y 6 BYTES Y DS18S20 TXBIT 1 DS18S20 X MASTER TX CRC BYTE BIT 1 DS18S20 TXBIT 1 MASTER T XIT 1 N N BIT 1 BIT 1 MATCH? MATCH? Y Y DS18S20 X BIT 63 MASTER T DS18S20 T BIT 63 X X BIT 63 MASTER T BIT 63 X N N BIT 63 BIT
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PDF
AP3429_A-766309.pdf
while consuming Output Voltage: 0.6V to VIN only 90μA of no-load quiescent current. Ultra-low R DS(ON) integrated Input Voltage: 2.7V to 5.5V MOSFETs and 100% duty cycle operation make the AP3429/A an Shutdown Current: <1μA ideal choice for high output voltage, high current applications which
in „Trafo-Treiber für DC/DC-Wandler“ · Analoge Elektronik und Schaltungstechnik ·
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si3459bdv.pdf
8 0 10 20 30 40 50 60 I - Drain Current (A) V - Drain-to-Source Voltage (V) D DS On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.9 D = 2.2 A V 1.7 ( 8 V GS= 10 V,DI = 2.2 A g V = 30 V e l DS n 1.5 V t ) e 6 V = 48 V s d r DS e i 1.3 o - a - O r - -) o 1.1 VGS =
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DS1820-DS1820S.pdf
NUMBER Y Y Y 6 BYTES DS18S20 TXBIT 1 DS18S20 X MASTER TX DS18S20 TXBIT 1 CRC BYTE BIT 1 MASTER T BIT 1 X N N BIT 1 BIT 1 MATCH? MATCH? Y Y DS18S20 X BIT 63 MASTER TX DS18S20 TXBIT 63 BIT 63 MASTER T XIT 63 N N BIT 63 BIT 63
in „1-Wire & Pull-UP“ · Mikrocontroller und Digitale Elektronik ·
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UHP-1000_Netzteil.pdf
-1 and BS EN/EN60335-1. UHP-1000 series serves as a high performance power supply solution for various industrial applications. ■ Model Encoding UHP - 1000 - 12 Output voltage Rated wattage Series name File Name:UHP-1000-SPEC 2021-08-27 1000W Slim Type with PFC Switching Supply UHP-1000 series SPECIFICATION MODEL UHP-1000-12 UHP-1000-24 UHP-1000-36 UHP-1000-48 DC VOLTAGE 12V 24V 36V 48V RATED CURRENT 80A 42A 28A 21A RATED POWER 960W 1008W
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CS5532-34-BS_F3.pdf
120 Sps 100 Sps 0001 60 Sps 50 Sps 0010 30 Sps 25 Sps 0011 15 Sps 12.5 Sps 0100 7.5 Sps 6.25 Sps 1000 3840 Sps 3200 Sps 1001 1920 Sps 1600 Sps 1010 960 Sps 800 Sps 1011 480 Sps 400 Sps 1100 240 Sps 200 Sps All other combinations are not used. 28 DS755F3 CS5532/34-BS U/B (Unipolar / Bipolar) [22] [6]
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Datei
main.c
); DS1820_Reset(); // Master sendet Reset Pulse DS1820_WriteByte(0xCC); // Ueberspringe ROM DS1820_WriteByte(0x44); // Master sendet Start Conversion DS1820_DelayUs(5); DS1820_Reset(); // Master sendet Reset Pulse DS1820_WriteByte(0xCC); // Ueberspringe ROM DS1820_WriteByte(0xBE); // Master sendet Read Scratch Pad for (k=0;k<9;k++) // Schreibt Daten vom ScratchPad in ein Array { get[k]=DS1820_ReadByte(); // set LED2
in „ds18b20 temperaturmessung mit pic18f4550“ · Mikrocontroller und Digitale Elektronik ·
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axpert_vm_iii5000__c.pdf
CSD19505KCS (VMIII-3200)Resistor GS: 11.75k Short or explosion TK100E08N1 (VMIII-5200) GD: 115.8k DS: OL Diode SD: 0.463V DS: OL Note1: When you use the multimeter to measure the resistor of the transistor, because of the capacitor in the circuit, it will cause the changing of the values when you measure
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Datei
DS10-g0134-PID.c
= 1000 // DS10_0133 190410 bei Hubbegrenzung (strom >50E)--> hub =1 und esum = 2500 // DS10_0134 190417 im Timer flags gesetzt und alle 4s-Funtionen in die while-Schleife verfrachtet // *******************
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NDM3000.pdf
DrainCurrent VDS ±20 V, V =GS V All ±1 µA T J55 C ±25 µA IGSS Gate-BodyLeakage,Forward VGS ±20 V, V DS0 V All ±100 nA ON CHARACTERISTICS (Note3) V GateThresholdVoltage V = V , I = -250 µA Q1, Q3, Q5 -1 -1.6 -3 V GS(th) DS GS D T =125 C -0.7 -1.25 -2.2 J V = V , I = 250 µA Q2, Q4, Q6 1 1.7 3 DS GS D T
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ZXRE330.pdf
are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. ZXRE330 1 of 9 July 2018 Document number: DS36772 Rev 3 - 2 www.diodes.com © Diodes Incorporated ZXRE330 Typical Applications Circuit Rs VR V S Cathode Anode Absolute Maximum
in „Spannungsreferenz 3,3v gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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LM2585.pdf
Supply Current Reference Voltage Reference Voltage vs Temperature vs Temperature vs Supply Voltage DS012515-2 DS012515-3 DS012515-4 Supply Current Current Limit Feedback Pin Bias vs Switch Current vs Temperature Current vs Temperature DS012515-5 DS012515-6 DS012515-7 5 www.national.com 5 5 2 Typical
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cs5460.pdf
varies with crystal parameters. This specification does not apply when using an external clock source. DS279PP5 7 CS5460 CS SDI MSB MSB - 1 LSB t3 t4 t5 t1 t2 t6 SCLK Figure 1. SDI Write Timing (Not to Scale) CS t t 7 9 SDO MSB MSB - 1 LSB t1 t2 t8 SCLK Figure 2. SDO Read Timing (Not to Scale) 8 DS279PP5
in „Leistung messen an 230V von 1W bis 2000W“ · Analoge Elektronik und Schaltungstechnik ·
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01149c.pdf
., DS22071, 2007. [5] MCP73811/2 Data Sheet "Simple, Miniature Single-Cell, Fully Integrated Li-Ion / Li-Polymer Charge Management Controllers", Microchip Technology Inc., DS22036, 2007. DS01149C-page 8 ©
in „Frage zu AN1149 - Load Sharing Microchip“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
DS10-g0133-PID.c
= 1000 // DS10_0133 190410 bei Hubbegrenzung (strom >50E)--> hub =1 und esum = 2500 // ************************************************************************* #include <MSP430x16x.h> // für MSP430F1611 #include <signal.h> #include "DS10-g0126-SD_MAINTI.c" //Reihenfolge beachten !! #include "DS10-g0126-DS32C35.h" #include "DS10-g0127-SD_Karte.h" #include "DS10-g0127-DS18B20-NR14bisNR16.h" #include "DS10-g0132-LMK62_SD.h" #include "
in „while-Schleife wird "unerlaubt verlassen"“ · Mikrocontroller und Digitale Elektronik ·
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PDF
VRE119_Thaler.pdf
WARM-UP DRIFT: 1 ppm Typ. • ACCURATE COMPARATOR THRESHOLD REFERENCE • EXCELLENT STABILITY: 6 ppm/1000 Hrs. Typ. • HIGH RESOLUTION SERVO SYSTEMS • EXCELLENT LINE REGULATION: 3 ppm/V Typ. • DIGITAL VOLTMETERS • HERMETIC 14-PIN CERAMIC DIP • HIGH PRECISION TEST and • MILITARY PROCESSING OPTION MEASUREMENT
in „[V] Referenzspannungsquellen VRE Thaler Corp.“ · Markt ·
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PDF
Si2302.pdf
Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET ▯▯▯D▯C▯ ▯▯▯▯▯▯▯ V (V) r (▯) I (A) DS DS(on) D 0.085 @ VGS = 4.5 V 2.8 20 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302DS (A2)* *Marking
in „Highside-Switch gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
70628.pdf
Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET ▯▯▯D▯C▯ ▯▯▯▯▯▯▯ V (V) r (▯) I (A) DS DS(on) D 0.085 @ VGS = 4.5 V 2.8 20 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302DS (A2)* *Marking
in „MOSFET CJ2302 geht kaputt?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM386_Low_Voltage_Audio_Power_Amplifier.pdf
Peak-to-Peak Output Voltage vs Supply Voltage (Referred to the Output) Swing vs Supply Voltage vs Frequency DS006976-5 DS006976-13 DS006976-12 Voltage Gain vs Frequency Distortion vs Frequency Distortion vs Output Power DS006976-14 DS006976-15 DS006976-16 Device Dissipation vs Output Device Dissipation vs Output
in „Elektretmikrofon und LM 386N-1 als Verstärker“ · Mikrocontroller und Digitale Elektronik ·
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PDF
lm386.pdf
Peak-to-Peak Output Voltage vs Supply Voltage (Referred to the Output) Swing vs Supply Voltage vs Frequency DS006976-5 DS006976-13 DS006976-12 Voltage Gain vs Frequency Distortion vs Frequency Distortion vs Output Power DS006976-14 DS006976-15 DS006976-16 Device Dissipation vs Output Device Dissipation vs Output
in „Spannanungsverstärkung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
infineon-bsb056n10nn3-g-datasheet-en.pdf
Values Unit Note / Test Condition Min. Typ. Max. Input capacitance Ciss - 4100 5500 pF VGS0 V, V =DS V, f=1 MHz Output capacitance Coss - 750 1000 pF VGS0 V, V =DS V, f=1 MHz Reverse transfer capacitance Crss - 27 - pF VGS0 V, V =DS V, f=1 MHz VDD50 V, V =GS V, I =3D A, Turn-on delay time d(on) - 15
in „Bauteilsuche Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
blynk.txt
set to PUSH. This means // that you define how often to send data to Blynk App. void sendSensor() { DS18B20.requestTemperatures(); float t = DS18B20.getTempCByIndex(0); Serial.print(t); Serial.println("ºC"); if (isnan(t)) { Serial.println("Failed to read from DS18B20 sensor!"); Serial.print(t); Serial.println
in „Messwert wird vom esp32 nicht übertragen.“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DBLS201G_DBLS209G_TSC.pdf
204G 205G 206G 207G 208G 209G Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 1200 1400 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 840 980 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 1200 1400 V Maximum average forward rectified current I 2 A F(AV)
in „Datenblatt Brückengleichrichter“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP4261-DigitalPot-2Fach-50kDATASHEET.pdf
Potentiometer in Precision Circuits DS00691 AN219 Comparing Digital Potentiometers to Mechanical Potentiometers DS00219 — Digital Potentiometer Design Guide DS22017 — Signal Chain Design Guide DS21825 © 2008 Microchip Technology Inc. DS22059B-page
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PDF
Protokoll_Beschreibung_HDA_4000_7000_CANopen_D_E_2014-01-30.pdf
Specific Entries (DS301) .......................................................18 9.1.1 Index 1000: DeviceType (read only) ...................................................................18 9.1.2 Index 1001: ErrorRegister
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ips021.pdf
SWITCH Features Product Summary • Over temperature shutdown • Over current shutdown • Active clamp R ds(on) 150m Ω (max) • Low current & logic level input • E.S.D protection V clamp 50V Ishutdown 5A Description Ton /Toff 1.5µs The IPS021/IPS021S are fully protected three terminal SMART POWER MOSFETs that
in „Intelligenter Schalttransistor...“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ips021.pdf
SWITCH Features Product Summary • Over temperature shutdown • Over current shutdown • Active clamp R ds(on) 150m Ω (max) • Low current & logic level input • E.S.D protection V clamp 50V Ishutdown 5A Description Ton /Toff 1.5µs The IPS021/IPS021S are fully protected three terminal SMART POWER MOSFETs that
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PDF
datasheet.pdf
) 2.0 2.6 4.0 Vdc DS GS D Threshold Temperature Coefficient (Negative) — 5.3 — mV/⋅C Static Drain–Source On–ResistancGS(V= 10 Vdc,DI = 15 Adc) RDS(on) — 0.067 0.08 Ohm Drain–Source On–Voltage V Vdc DS(on) (VGS = 10 Vdc,DI
in „verstärkerschaltung“ · Analoge Elektronik und Schaltungstechnik ·
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MCP2021.pdf
Ceramic cap. 0.1 S E 0.01 Unstable 0.001 0.1 1 10 100 1000 Load Capacitor [uF] DS22298A-page 20 2012 Microchip Technology Inc. MCP2021A/2A 2.4 AC Specification AC CHARACTERISTICS VBB = 6.0V to 18.0V; A= -40°C to +125°C Parameter Sym. Min. Typ. Max. Units
in „MCP2021 -> Welcher ESD Level wird erreicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
tempf_lm335.pdf
Characteristics 3 L Reverse Voltage Change Calibrated Error Reverse Characteristics 5 2 M / 5 1 M L DS005698-27 DS005698-28 DS005698-29 Response Time Dynamic Impedance Noise Voltage DS005698-30 DS005698-31 DS005698-32 Thermal Resistance Thermal Time Constant Thermal Response in Still Air Junction to Air
in „Temperaturmessung mit μC und LM 335“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM135_LM235_LM335TO92_NSC.pdf
Characteristics 3 L Reverse Voltage Change Calibrated Error Reverse Characteristics 5 2 M / 5 1 M L DS005698-27 DS005698-28 DS005698-29 Response Time Dynamic Impedance Noise Voltage DS005698-30 DS005698-31 DS005698-32 Thermal Resistance Thermal Time Constant Thermal Response in Still Air Junction to Air
in „Temperatusensor LM 335“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM135_LM235_LM335TO92_NSC.pdf
Characteristics 3 L Reverse Voltage Change Calibrated Error Reverse Characteristics 5 2 M / 5 1 M L DS005698-27 DS005698-28 DS005698-29 Response Time Dynamic Impedance Noise Voltage DS005698-30 DS005698-31 DS005698-32 Thermal Resistance Thermal Time Constant Thermal Response in Still Air Junction to Air
in „Temperatur + Anfänger“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM135.pdf
Characteristics 3 L Reverse Voltage Change Calibrated Error Reverse Characteristics 5 2 M / 5 1 M L DS005698-27 DS005698-28 DS005698-29 Response Time Dynamic Impedance Noise Voltage DS005698-30 DS005698-31 DS005698-32 Thermal Resistance Thermal Time Constant Thermal Response in Still Air Junction to Air
in „Spannungsversorgung LM135“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS18S20_1_.pdf
conversions or EEPROM writes. Note 10: DQ line is high (“high-Z” state). Note 11: Drift data is based on a 1000-hour stress test at +125°C witDDV= 5.5V. Maxim Integrated │ 2 www.maximintegrated.com DS18S20 High-Precision 1-Wire Digital Thermometer DS18S20 TYPICAL ERROR CURVE 0.5 ) 0.4 ( 0.3 +3s ERROR R 0.2 R
in „433Mhz RF Wireless Transmitter + Receiver“ · Mikrocontroller und Digitale Elektronik ·
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Datei
OneWire.c
while(1); } // the first ROM byte indicates which chip switch (addr[0]) { case 0x10: printf("Chip = DS18S20"); // or old DS1820 type_s = 1; break; case 0x28: printf("Chip = DS18B20"); type_s = 0; break; case 0x22: printf("Chip = DS1822"); type_s = 0; break; default: { printf("Device is not a DS18x20 family
in „Böses One-Wire device“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SI7611.pdf
noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS VGS = 0 V, D = - 250 µA - 40 V V Temperature Coefficient ΔV DS/TJ - 41 DS ID= - 250 µA mV/°C VGS(th)Temperature Coefficient ΔV GS(th)J 4.7 Gate-Source Threshold Voltage V V = V , I = - 250 µA - 1 - 3
in „gleichwertiger Ersatztyp für Mosfet gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IPB180P04P4.pdf
200 0 50 100 150 200 TC[°C] T C°C] 3 Safe operating area 4 Max. transient thermal impedance ID= f(V DS); TC= 25 °C; D = 0 Z thJC= f(p ) parameter: t p parameter: D=t /Tp 1 1000 1 µs 10 10 µs 100 µs 100 1 ms 0.5 100 ] W A / 0.1 [ [ 10 -1 ID J 0.01 - t Z 10 0.05 10-2 single pulse -3 1 10 0.1 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 -V DS[V] tp[s] Rev. 1.3 page 4 2011-04-27 Final Data Sheet IPB180P04P4L-02 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I = f(V ); T = 25°C R = f(I ); T = 25°C D DS j DS(on) D j parameter
in „wie pMOSFET für Strombegrenzung kühlen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LHC1-22XX_Super_LEDs.pdf
2200K 700 825 80 300 9.0 LHC1-2290-1203 90 97 2700K 850 950 90 300 9.0 LHC1-2790-1203 90 97 3000K 900 1000 93 300 9.0 LHC1-3090-1203 90 97 3500K 925 1025 96 300 9.0 LHC1-3590-1203 90 97 4000K 1000 1100 100 300 9.0 LHC1-4090-1203 Table 1d. Product Selection Guide for LUXEON CoB 1204 [1] [1, 2] CRI Nominal
in „Entladeformel einer Spule“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
spp20n60s5_eng_tds.pdf
SPP20N60S5 Cool MOS™ Power Transistor V DS 600 V Feature R DS(on) 0.19 Ω • New revolutionary high voltage technology D 20 A • Worldwide best R in TO 220 DS(on) • Ultra low gate charge PG-TO220 2 • Periodic avalanche rated • Extreme dv/dt rated
in „Mosfet defekt - kann der Ersatztyp verwendet werden?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
542-01945-0-Z86E04.pdf
Notes 1 TPC Input Clock Period 4.5V 1000 DC 250 DC ns 1 5.5V 1000 DC 250 DC ns 1 2 TrC Clock Input Rise 4.5V 25 25 ns 1 TfC and Fall Times 5.5V 25 25 ns 1 3 TwC Input Clock Width 4.5V 500 125 ns 1 5.5V 500 125 ns 1 4. TwTinL Timer Input Low
in „Pollin Ladegerät WCFD0801500IFOON : Rückwärts Ingenieur gesucht !“ · Mikrocontroller und Digitale Elektronik ·
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Datei
owaf.c
: 0) + ((lu8_Decimal & 0x02) ? 0 : 0) + */((lu8_Decimal & 0x01) ? 5 : 0); if(u8_10000 >= 5) { u8_1000 +=1; } if(u8_1000 >= 5) { u8_100 +=1; } if(u8_100 > 10) { u8_10++; u8_100 -=10; } *apu8_Decimal = (u8_10 * 10u) + u8_100; } void owaf_Ds18b20_DisplayTemp(volatile ts_fifo *aps_fifo, uint8_t aau8_data[]) { int8_t ls8_Integer = 0; uint8_t lu8_Decimal = 0u; owaf_Ds18b20_StructTemp(&ls8_Integer, &lu8_Decimal, aau8_data); if(ls8_Integer < 0) { fifo_putc(aps_fifo, '-'); ls8_Integer *= -1; } else { fifo_putc(aps_fifo, '+'); } if(ls8_Integer > 99) { fifo_putv(aps_fifo
in „1 Wire manche Teilnehmer antworten nicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM2991.pdf
Typical Performance Characteristics 2 M L Dropout Voltage Normalized Output Voltage Output Voltage DS011260-13 DS011260-14 DS011260-15 Output Noise Voltage Quiescent Current Maximum Output Current DS011260-16 DS011260-17 DS011260-18 Line Transient Response Load Transient Response Maximum Output Current DS011260-19 DS011260-20 DS011260-21 Ripple Rejection Output Impedance ON /OFF Control Voltage DS011260-22 DS011260-23 DS011260-24 www.national.com 4 L M Typical Performance Characteristics (Continued) 9
in „Negative Low Dropout Adjustable Regulator gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ds17001.pdf
are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information = Manufacturers’ Code Marking DFxxxS = Product Type Marking Code
in „Schutzwiderstand Dunstabzugshaube“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP1700.pdf
c / -20 V R = 1.8V B -30 ( R -40 I = 100 mA P -50 Load -60 Step 0.01 0.01 1▯▯▯ 10.00 100 1000 Frequency (KHz) FIGURE 2-15: Power Supply Ripple FIGURE 2-18: Dynamic Load Step Rejection vs. Frequency (V R = 2.8V). (V R = 1.8V). 2005-2016 Microchip Technology Inc. DS20001826D-page 7 MCP1700 Note
in „ESP-01 mit LiPo betreiben“ · Mikrocontroller und Digitale Elektronik ·
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PDF
CPH3308.pdf
Drain-to-Source Breakdown Voltage V I =-1mA, V =0 -30 V (BR)DSS D GS Zero-Gate Voltage Drain Current IDSS V DS=-30V, VGS =0 -1 A Gate-to-Source Leakage Current I V =±16V, V =0 ±10 A GSS GS DS Cutoff Voltage VGS (off) V DS=-10V, D =-1mA -1.0 -2.4 V Forward Transfer Admittance yfs V =-10V, I =-2A 3 4.3 S DS
in „2x SMD Marking gesucht“ · Mikrocontroller und Digitale Elektronik ·
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Datei
sensorhub.asm
; temperaturwert IN lsb push ar_1 ; sichern ldi ZL,low(uart_message*2) ldi ZH,high(uart_message*2) DS_messen_text_output_1_loop: lpm ar_1,Z+ cpi ar_1,0 breq DS_messen_text_output_1_exit sts UART_TX,ar_1 rcall uart_send rjmp DS_messen_text_output_1_loop DS_messen_text_output_1_exit: pop ar_1 ;widerherstellen
in „Controller fällt in (anscheinend) RESET“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LDO.pdf
regulations in DC-DC converters. This device includes current limit, SOA and thermal protections. DS12022 - Rev 6 - April 2020 www.st.com For further information contact your local STMicroelectronics sales office. LDL1117 Diagram 1 Diagram Figure 1. Block diagram DS12022 - Rev 6 page 2/23 LDL1117 Pin
in „STM32 - 5V tolerante Pins bei Startup“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS2761.pdf
DS2761BE/T&R D2761EB DS2761BE on Tape-and-Reel DS2761AE-025 2761A25 TSSOP, 25mW Sense Resistor, 4.275V VOV DS2761BE-025 2761B25 TSSOP, 25mW Sense Resistor, 4.35V VOV DS2761AE-025/T&R 2761A25 DS2761AE-025 in Tape-and-Reel DS2761BE-025/T&R 2761B25 DS2761BE-025 in Tape-and-Reel DS2761AX-025/T&R DS2761AR Flip-Chip, 25mW Sense Resistor, Tape-and-Reel, 4.275OVV DS2761BX-025/T&R DS2761BR Flip-Chip, 25mW Sense Resistor, Tape-and-Reel
in „Akkustand mit AVR feststellen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlml6402pbf.pdf
Coefficient ––– -0.009 ––– V/°C Reference to 25°C,DI = -1mA ––– 0.050 0.065 V = -4.5V, I = -3.7A R DS(on) Static Drain-to-Source On-Resistance Ω GS D ––– 0.080 0.135 VGS = -2.5V,DI = -3.1A V Gate Threshold Voltage -0.40 -0.55 -1.2 V V = V , I = -250μA GS(th) DS GS D gfs Forward Transconductance 6.0 –
in „TP4056 Polarity protection“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IPD180N10N3_G-DS-v02_03-en.pdf
IPD180N10N3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 100 V DS • N-channel, normal level RDS(on),max TO-263 18 mW • Excellent gate charge x DS(on)roduct (FOM) D 43 A • Very low on-resistance DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant
in „MosFet; unterschiedliche Schaltzeiten aus Datenblatt und Simulation“ · Analoge Elektronik und Schaltungstechnik ·