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eeprom.pdf
Algorithms The X2816C supports a 16-byte page write operation, —No Overerase Problem typicallyprovidinga300 s/bytewritecycle,enablingthe • High Performance Advanced NMOS Technology entire memory to be written in less than 640ms. The • Fast Write Cycle Times X2816C also features DATA Polling, a system software
in „EEPROM mit SRAM ersetzen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
datenblatt_von_FT232BL.pdf
Stop Bits - Windows XP 64 Bit and Odd/Even/Mark/Space/No Parity - Windows XP Embedded • Data rate 300 => 3M Baud (TTL) - Windows CE 4.2 • Data rate 300 => 1M Baud (RS232) - MAC OS-8 and OS-9 • Data rate 300 => 3M Baud (RS422/RS485) - MAC OS-X • 384 Byte Receive Buffer / 128 Byte Transmit Buffer - Linux
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PDF
A200_FT232BL.pdf
Stop Bits - Windows XP 64 Bit and Odd/Even/Mark/Space/No Parity - Windows XP Embedded • Data rate 300 => 3M Baud (TTL) - Windows CE 4.2 • Data rate 300 => 1M Baud (RS232) - MAC OS-8 and OS-9 • Data rate 300 => 3M Baud (RS422/RS485) - MAC OS-X • 384 Byte Receive Buffer / 128 Byte Transmit Buffer - Linux
in „Schaltplan für FT 232BL überprüfen“ · Mikrocontroller und Digitale Elektronik ·
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2N7000-D.PDF
http://onsemi.com • AEC Qualified 200 mAMPS • PPAP Capable • This is a Pb−Free Device* 60 VOLTS R DS(on) = 5 W N−Channel MAXIMUM RATINGS D Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain−Gate Voltage GS = 1.0 MW) VDGR 60 Vdc G Gate−Source Voltage − Continuous V GS ±20 Vdc S − Non−repetitivp
in „ESD-Demonstrator / 2n7000 MOS-FET zerstören“ · Analoge Elektronik und Schaltungstechnik ·
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BS170_2N7000.pdf
N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D ESD Protected: 2000 V V DS (V) rDS(on) (W) V GS(th)(V) D (A) 2 @ V = 10 V 0.47 APPLICATIONS 60 GS 1.0 to 2.5 4 @ VGS = 4.5 V 0.33 D Direct Logic-Level Interface: TTL/CMOS D Soild State Relays D Drivers: Relays, Solenoids, Lamps
in „(Mosfet-) Alternative zu ULN2003“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Si9435BDY.PDF
Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES D TrenchFETr Power MOSFET V DS (V) rDS(on) (W) D (A) 0.042 @ VGS = −10 V −5.7 −30 0.055 @ VGS= −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 S SO-8 S D 1 8 G S D 2 7 S D 3 6 G 4 5 D Top View D Ordering Information: Si9435BDY Si9435BDY-T1 (with
in „AVR Ausgang an FET, galvanisch getrennt, so ok?“ · Analoge Elektronik und Schaltungstechnik ·
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BSS138.pdf
. 8 Drain-Source On Resistance vs. Drain Current DS30144 Rev. 6 - 2 4 of 5 BSS138 www.diodes.com 1 ) ( T N 0.1 E R U 150°C C E -55°C D I 0.01 25°C D I 0.001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, DIODE FORWARD VOLTAGE (V) Fig. 9 Body Diode Current vs. Body Diode Voltage 100 VGS= 0V f = 1MHz ) p ( CiSS C N A I 10 C P A COSS , C CrSS 1 0 5 10 15 20 25 30 V DS, DRAIN SOURCE VOLTAGE (V) Fig. 10 Capacitance vs. Drain Source Voltage DS30144 Rev. 6 - 2 5 of 5 BSS138 www.diodes.com
in „Logic Level Hype“ · Analoge Elektronik und Schaltungstechnik ·
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sla7024m.pdf
Symbol Test Conditions Min Typ Max Units FET Leakage Current I V = 100 V, V = 44 V — — 4.0 mA DSS DS CC FET ON Voltage V (SLA7024M & SMA7029M) V = 14 V, I = 1 A — — 600 mV DS(ON) CC OUT (SLA7026M) V CC = 14 V, IOUT = 3 A — — 850 mV FET ON Resistance r (SLA7024M & SMA7029M) V = 14 V, I = 1 A — — 600
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STP15N80K5.pdf
0.01 0.1 1 10 100 V DS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 ID AM15434v1 (A) 1µs i 10µs 10 raon iaDS 100µs it aR ti ym 1ms eredb Opii 10ms 1 L Tj=150°C Tc=25°C Single pulse 0.1
in „1500V 8A mit MOSFET schalten“ · Analoge Elektronik und Schaltungstechnik ·
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LM35.pdf
Characteristics 5 Thermal Resistance Thermal Time Constant Thermal Response Junction to Air in Still Air DS005516-26 DS005516-25 DS005516-27 Thermal Response in Minimum Supply Quiescent Current Stirred Oil Bath Voltage vs. Temperature vs. Temperature (In Circuit of Figure 1.) DS005516-28 DS005516-29 DS005516
in „ADC schwankungen bei Atmega16“ · Mikrocontroller und Digitale Elektronik ·
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LM35.pdf
Characteristics 5 Thermal Resistance Thermal Time Constant Thermal Response Junction to Air in Still Air DS005516-26 DS005516-25 DS005516-27 Thermal Response in Minimum Supply Quiescent Current Stirred Oil Bath Voltage vs. Temperature vs. Temperature (In Circuit of Figure 1.) DS005516-28 DS005516-29 DS005516
in „Flinker Temperatursensor“ · Mikrocontroller und Digitale Elektronik ·
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LTC1477_LinearTechnology.pdf
FEATURES DESCRIPTION Extremely Low R Switch: 0.07 The LTC 1477/LTC1478 protected high side switches DS(ON) No Parasitic Body Diode provide extremely low R DS(ON) switching with built-in Built-In Short-Circuit Protection: 2A protectionagainstshort-circuitandthermaloverloadcon- Built-In Thermal Overload
in „TPS61175 Overccurent Protection Mode“ · Analoge Elektronik und Schaltungstechnik ·
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AN-9010.PDF
space −14 VDD (8.86 × 10 [F/cm]); CB is epitaxial layer background concentration [atoms / cm ]; DF I V DS is drain−to−source voltage; and O C C fB is diode potencial. RG gd1 d G As shown in the equation above, V DS >>f CBdecdsases VGG Cgs Ǹ as V DS increases with the relationship of C ds1ń V . DS Characteristics
in „SMD Mosfet mit Z-Diode für induktive Last“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IPP_B_I80N04S4_04-DS-v01_00-en-1518478.pdf
GS=0V - 0.02 1 µA VDS=18V, V GS=0V, 2) - 1 20 Tj=85°C Gate-source leakage current IGSS VGS =20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) VGS =10V, ID=80A - 4.3 4.6 mΩ V =10V, I =80A, GS D - 3.9 4.2 SMD version Rev. 1.0 page 2 2010-04-06 IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04
in „Hilfe bei Halbbrückenschaltung benötigt“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
KiCadLib.py
7 -800 100 300 R 50 50 1 1 I C X PIN8 8 -800 0 300 R 50 50 1 1 I IC X PIN9 9 800 -300 300 L 50 50 1 1 I L X PIN10 10 800 -200 300 L 50 50 1 1 I CL X PIN11 11 800 -100 300 L 50 50 1 1 I V X PIN12 12 800 0 300 L 50
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KM416C1204C.pdf
ADDRESS ADDRESS V IL- ¡ó WCS tWCH tWCS tWCH WCS WCH V IH - tWP tWP ¡ó tWP W V IL- VIH - ¡ó OE VIL- ¡ó tDS tDH tDS tDH tDS tDH DQ0 ~ DQ7 V IH- ¡ó VALID VALID VALID V IL- DATA-IN DATA-IN ¡ó DATA-IN tDS tDH tDS tDH tDS tDH DQ8 ~ DQ15 V IH- ¡ó VALID VALID VALID V IL- DATA-IN DATA-IN DATA-IN ¡ó Don′t care Undefined
in „Suche DRAM Chips“ · Mikrocontroller und Digitale Elektronik ·
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ds232bv16.pdf
Data, 1 / 2 Stop Bits - Windows CE and Odd/Even/Mark/Space/No Parity - MAC OS-8 and OS-9 • Data rate 300 => 3M Baud (TTL) - MAC OS-X • Data rate 300 => 1M Baud (RS232) - Linux 2.40 and greater • Data rate 300 => 3M Baud (RS422/RS485) D2XX (USB Direct Drivers + DLL S/W Interface) • 384 Byte Receive Buffer
in „kleiner FET“ · Analoge Elektronik und Schaltungstechnik ·
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si1402dh.pdf
100 nA VDS = 30 V, GS = 0 V 1 Zero Gate Voltage Drain Current DSS V = 30 V, V = 0 V, T = 55 °C 5 µA DS GS J On-State Drain Current ID(on) V DS ≥ 5 V, GS = 4.5 V 4 A a V GS = 4.5 V,DI = 3.0 A 0.064 0.077 Drain-Source On-State Resistance R DS(on) Ω V GS = 2.5 V,DI = 2.0 A 0.095 0.120 a Forward Transconductance
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44-vish.pdf
SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available R (Ω) V = 5.0 V 0.028 • Logic-Level Gate Drive DS(on) GS RoHS* Qg(Max.) (nC) 66 • R DS(on)pecified at VGS = 4 V and 5 V COMPLIANT • 175 °C Operating Temperature Qgs(nC) 12 Qgd (nC) 43 • Fast Switching Configuration Single • Ease of Paralleling D • Simple
in „Aus Minus Plus machen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Vishay.pdf
SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available R (Ω) V = 5.0 V 0.028 • Logic-Level Gate Drive DS(on) GS RoHS* Qg(Max.) (nC) 66 • R DS(on)pecified at VGS = 4 V and 5 V COMPLIANT • 175 °C Operating Temperature Qgs(nC) 12 Qgd (nC) 43 • Fast Switching Configuration Single • Ease of Paralleling D • Simple
in „12V 2A per Raspberry Pi (3,3V) schalten“ · Analoge Elektronik und Schaltungstechnik ·
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LM2937.pdf
Transient Response Ripple Rejection DS011280-13 DS011280-14 DS011280-15 Output Impedance Maximum Power Maximum Power Dissipation Dissipation (TO-220) (TO-263) (Note 2) DS011280-16 DS011280-17 DS011280-18 5 www.national.com 7 3 9 Typical Performance Characteristics (Continued) 2 M L Low Voltage Behavior Low Voltage Behavior Low Voltage Behavior DS011280-19 DS011280-20 DS011280-21 Output at Voltage Output at Voltage Extremes Output Capacitor ESR Extremes DS011280-24 DS011280-22 DS011280-23 Peak Output Current DS011280-25 Typical Application DS011280
in „Minimale Hardware zum Auto CAN-Bus abhören“ · Mikrocontroller und Digitale Elektronik ·
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LTC1923.pdf
losses in the application shown on the front diagonalsofthebridge.TheMOSFETsshouldbeselected for their DS(ON), gate charge and maximum V DS, VGS page of the data shee2: Input supply current, MOSFET ratings. A maximum V DS rating of 20V is more than switching losses and IR losses. sufficient for 5V and 12V
in „Peltier und PWM?“ · Analoge Elektronik und Schaltungstechnik ·
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MCP6562.pdf
© 2009 Microchip Technology Inc. DS22139B-page 35 MCP6561/1R/1U/2/4 NOTES: DS22139B-page 36 © 2009 Microchip Technology Inc. MCP6561/1R/1U/2/4 APPENDIX A: REVISION HISTORY Revision B (August 2009) The following is the list of modifications
in „Schmitttrigger mit MCP6562 unklare Abweichung“ · Analoge Elektronik und Schaltungstechnik ·
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MCP794xx.pdf
1300 — — ns 2.5V ≤ VCC≤ 5.5V 4 TR SDA and SCL Rise Time — — 1000 ns 1.8V ≤ VCC< 2.5V (Note 1) — — 300 ns 2.5V ≤ VCC≤ 5.5V 5 TF SDA and SCL Fall Time — — 1000 ns 1.8V ≤ VCC< 2.5V (Note 1) — — 300 ns 2.5V ≤ VCC≤ 5.5V 6 T HDSTA Start Condition Hold Time 4000 — — ns 1.8V ≤ VCC< 2.5V 600 — — ns 2.5V ≤ VCC
in „MCP794xx EUI-64 Node Adresse“ · Mikrocontroller und Digitale Elektronik ·
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176001-da-01-en-ic_lm317t.pdf
Characteristics Output Capacitor = 0 µF unless otherwise noted Load Regulation Current Limit Adjustment Current DS009063-37 DS009063-38 DS009063-39 Dropout Voltage Temperature Stability Minimum Operating Current DS009063-40 DS009063-41 DS009063-42 Ripple Rejection Ripple Rejection Ripple Rejection DS009063-43 DS009063-44 DS009063-45 Output Impedance Line Transient Response Load Transient Response DS009063-47 DS009063-48 DS009063-46 www.national.com 4 Application Hints aluminum electrolytic) on the output swamps this effect
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176001-da-01-en-IC_LM317T.pdf
Characteristics Output Capacitor = 0 µF unless otherwise noted Load Regulation Current Limit Adjustment Current DS009063-37 DS009063-38 DS009063-39 Dropout Voltage Temperature Stability Minimum Operating Current DS009063-40 DS009063-41 DS009063-42 Ripple Rejection Ripple Rejection Ripple Rejection DS009063-43 DS009063-44 DS009063-45 Output Impedance Line Transient Response Load Transient Response DS009063-47 DS009063-48 DS009063-46 www.national.com 4 Application Hints aluminum electrolytic) on the output swamps this effect
in „Spannungsregler“ · Mikrocontroller und Digitale Elektronik ·
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LM334.pdf
Performance Characteristics M / 3 Output Impedance Maximum Slew Rate 2 Linear Operation M / 3 1 M L DS005697-30 DS005697-31 Start-Up Transient Response DS005697-32 DS005697-33 Voltage Across RSET(VR) Current Noise DS005697-34 DS005697-35 www.national.com 4 L M 1 Typical Performance Characteristics (Continued
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PDF
LM317.pdf
Characteristics Output Capacitor = 0 µF unless otherwise noted Load Regulation Current Limit Adjustment Current DS009063-37 DS009063-38 DS009063-39 Dropout Voltage Temperature Stability Minimum Operating Current DS009063-40 DS009063-41 DS009063-42 Ripple Rejection Ripple Rejection Ripple Rejection DS009063-43 DS009063-44 DS009063-45 Output Impedance Line Transient Response Load Transient Response DS009063-47 DS009063-48 DS009063-46 www.national.com 4 Application Hints aluminum electrolytic) on the output swamps this effect
in „Einfaches regelbares Netzteil mit LM350“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MOSFET_Gate_Driver_Circuit.pdf
magnitude and period of output ringing depend on stray inductance. Load inductance Stray 20nH inductance 300V + ID R 1 D R － + 10V 2 R 3 G V DS － S 5V V GS Figure 4.5 Switching simulation circuit © 2017 - 2018 15 2018-07-26 Toshiba Electronic Devices & Storage Corporation MOSFET Gate Drive Circuit Application
in „MOSFET npn/pnp Driver“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MOSFET_Gate_Drive_Circuit_.pdf
magnitude and period of output ringing depend on stray inductance. Load inductance Stray 20nH inductance 300V + ID R 1 D R － + 10V 2 R 3 G V DS － S 5V V GS Figure 4.5 Switching simulation circuit © 2017 - 2018 15 2018-07-26 Toshiba Electronic Devices & Storage Corporation MOSFET Gate Drive Circuit Application
in „Gatebeschaltung Treiber“ · Analoge Elektronik und Schaltungstechnik ·
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ips021.pdf
SWITCH Features Product Summary • Over temperature shutdown • Over current shutdown • Active clamp R ds(on) 150m Ω (max) • Low current & logic level input • E.S.D protection V clamp 50V Ishutdown 5A Description Ton /Toff 1.5µs The IPS021/IPS021S are fully protected three terminal SMART POWER MOSFETs that
in „Intelligenter Schalttransistor...“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ips021.pdf
SWITCH Features Product Summary • Over temperature shutdown • Over current shutdown • Active clamp R ds(on) 150m Ω (max) • Low current & logic level input • E.S.D protection V clamp 50V Ishutdown 5A Description Ton /Toff 1.5µs The IPS021/IPS021S are fully protected three terminal SMART POWER MOSFETs that
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tca8418.pdf
GPIO interrupt status 0 0 0 0 0 0 0 0 GPIO_DAT_STAT1 0x14 (read twice to clear) GPIO data status R7DS R6DS R5DS R4DS R3DS R2DS R1DS R0DS 0x15 GPIO_DAT_STAT2 GPIO data status C7DS C6DS C5DS C4DS C3DS C2DS C1DS C0DS (read twice to clear) 0x16 GPIO_DAT_STAT3 GPIO data status N/A N/A N/A N/A N/A N/A C9DS
in „Keypad 3x4 (am Tasmota o.ä.)“ · Mikrocontroller und Digitale Elektronik ·
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STP6NK90ZFP.pdf
™ Power MOSFET 2 in D PAK, TO-220, TO-220FP and TO-247 packages TAB Features TAB 1 3 Order codes V DS R DS(on)ax. D D PAK 3 TO-220 1 2 STB6NK90ZT4 STP6NK90Z 900 V 2 Ω 5.8 A STP6NK90ZFP 23 3 STW7NK90Z 1 2 TO-220FP TO-247 1 • Extremely high dv/dt capability D(2, TAB) • 100% avalanche tested • Gate charge
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PDF
STP6NK90ZFP.pdf
™ Power MOSFET 2 in D PAK, TO-220, TO-220FP and TO-247 packages TAB Features TAB 1 3 Order codes V DS R DS(on)ax. D D PAK 3 TO-220 1 2 STB6NK90ZT4 STP6NK90Z 900 V 2 Ω 5.8 A STP6NK90ZFP 23 3 STW7NK90Z 1 2 TO-220FP TO-247 1 • Extremely high dv/dt capability D(2, TAB) • 100% avalanche tested • Gate charge
in „Unterschiedliche Power MOSFET kompatibel?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
bs208.pdf
DSS drain-source breakdown −V GS= 0 200 − - V voltage −ID= 10 A −DSS drain-source leakage curren−V DS= 130 V − − 1 A V GS= 0 −DSS drain-source leakage curren−V DS= 70 V − − 25 A −V GS= 0.2 V −GSS gate-source leakage current−V GS= 20 V − − 100 nA V DS= 0 −VGS(th) gate-source threshold V GS= VDS 0.8 −
in „Mosfet BS208 sperrt nicht bei >3V“ · Analoge Elektronik und Schaltungstechnik ·
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FDW2501NZ.pdf
Temperature I = 250 µA, Referenced to 25°C 14 mV/°C ∆T J Coefficient D DSS Zero Gate Voltage Drain Current V DS= 16 V, V GS= 0 V 1 µA GSSF Gate–Body Leakage, Forward V GS= 12 V, V DS= 0 V 10 µA GSSR Gate–Body Leakage, Reverse V GS= –12 V, V DS= 0 V –10 µA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage
in „N-Fet leitet auch bei 0v Gate-Spannung?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF7416_datasheet.pdf
1.0 ––– ––– V VDS = VGS, D = -250µA g Forward Transconductance 5.6 ––– ––– S V = -10V, I = -2.8A fs DS D ––– ––– -1.0 VDS = -24V, GS = 0V IDSS Drain-to-Source Leakage Current ––– ––– -25 µA V = -24V, V = 0V, T = 125°C DS GS J Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V IGSS Gate-to-Source Reverse
in „Datenblatt / Prinzip richtig verstanden?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BMP581.pdf
pressure A p_rel 900 – 1100 ± 0.4 Pa accuracy hPa hPa, 25 °C, 1 kPa steps Absolute Pressure Ap_abs 300 – 1100 ± 30 Pa accuracy hPa, -5 – 65 °C, including TCO © Bosch Sensortec GmbH 2023 | All rights reserved, also regarding any disposal, exploDocument number: BST-BMP581-DS004-11ribution, as well as in the event of applications for industrial property rights Bosch Sensortec | BST-BMP581-DS004-11 9 | 75 Absolute accuracy Ap abs_full_range300 – 1100 ± 75 Pa pressure (full hPa, -40 – range) 85 °C, incl. solder drift, TCO after 3 qualification Offset temperature TCO 300 – 1100 ± 0.5 Pa/K coefficient
in „Datenlogger Pendeluhr“ · Mikrocontroller und Digitale Elektronik ·
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Datei
KiCadLib.py
7 -800 100 300 R 50 50 1 1 I C X PIN8 8 -800 0 300 R 50 50 1 1 I IC X PIN9 9 800 -300 300 L 50 50 1 1 I L X PIN10 10 800 -200 300 L 50 50 1 1 I CL X PIN11 11 800 -100 300 L 50 50 1 1 I V X PIN12 12 800 0 300 L 50
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PDF
Halbleiterliste.pdf
2SK30A 1 Mosfet 4049BCD 4 Hex Inverting Buffer https://pdf.datasheetcatalog.com/datasheets/70/109093_DS.pdf 4085PC 4 CMOS Dual 2-wide 2-input and-or-invert gate https://www.ti.com/lit/ds/symlink/cd4085b.pdf 4520BPC 2 Dual 4 bit binary counter https://datasheetspdf.com/pdf-file/504568/FairchildSemiconductor
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PDF
A3909-Datasheet.pdf
V – 1.6 2 Ω RDS(on)tot Source) I = 1 A,JT = 25°C,BB= 4 V – 2.7 3.5 Ω Source Driver On-Resistance R DS(on)srcI = 1 A,JT = 25°C,BB= 12 V – 1.12 – Ω Sink Driver On-Resistance R I = 1 A, T = 25°C, V= 12 V – 0.48 – Ω DS(on)snk J BB Input Logic Low Level VIL(Standby)ll inputs low – – 0.4 V Input Logic Low Level V IL – – 0.8 V Input Logic High Level VIH 2 – – V Input Hysteresis V 100 300 500 mV HYS Logic Input Current IIN VIN= 5 V (Pull down = 50 kΩ) – 100 150 µA VBB UVLO VBBUVLO VBB rising – 3.6 3.95 V VBB UVLO Hysteresis V BBHYS 100 300 500 mV Standby Timer t IN1 = IN2 = IN3 = IN4
in „A3903 Motor Driver Schaltfrequenz?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM2594HVM-5.0_Datenblatt.pdf
software. Typical Performance Characteristics Normalized Efficiency Line Regulation Output Voltage DS012439-5 DS012439-6 DS012439-4 Switch Saturation Switch Current Limit Dropout Voltage Voltage DS012439-8 DS012439-9 DS012439-7 5 www.national.com V 4 Typical Performance Characteristics (Continued) 9 2 M / Quiescent Current Standby Minimum Operating 4 Quiescent Current Supply Voltage 5 2 M L DS012439-10 DS012439-11 DS012439-12 ON /OFF Threshold ON /OFF Pin Switching Frequency Voltage Current (Sinking) DS012439-13 DS012439-15 DS012439-14 Feedback Pin Bias Current DS012439-16 www.national.com
in „Idee für ein ||transportables|| Handyladegerät“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TPCS8209.pdf
Equipment Applications • Small footprint due to small and thin package • Low drain-source ON resistance: R DS (ON) = 19 mΩ (typ.) • High forward transfer admittance: |Y |fs 9.2 S (typ.) • Low leakage current: I = 10 μA (max) (V = 20 V) DSS DS • Enhancement mode: V th= 0.5~1.2 V (VDS = 10 V, ID= 200 μA) Absolute
in „DC/DC-Wandler von 2.4 V auf 15 V mit 25 Watt“ · Analoge Elektronik und Schaltungstechnik ·
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LT3757_Boost-Sepic-Flyback-Invert.pdf
CL= 3300pF 30 ) 100 ( 25 C N 80 U A20 Ω E ( (100 F 60 I15 R D I A 40 10 M O N 20 5 0 10 0 0 100 200 300 400 500 600 700 800 9001000 0 100 200 300 400 500 600 700 800 9001000 –0.8 –0.4 0 0.4 0.8 1.2 1.6 SWITCHING FREQUENCY (KHz) SWITCHING FREQUENCY (KHz) FBX VOLTAGE (V) 3757 G04 3757 G05 3757 G06 Switching
in „Datenblätter von Linear Technologies“ · Analoge Elektronik und Schaltungstechnik ·
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si9934bdy.pdf
Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY FEATURES V (V) r (W) I (A) DS DS(on) D D TrenchFETr Power MOSFET 0.035 @ VGS = −4.5 V −6.4 −12 0.056 @ VGS = −2.5 V −5.1 S 1 S2 SO-8 S1 1 8 D 1 G G 1 2 G1 2 7 D 1 S2 3 6 D 2 G2 4 5 D 2 Top View D 1 D2 Ordering Information: Si9934BDY—E3
in „P-MOS Vgs positiv?“ · Mikrocontroller und Digitale Elektronik ·
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HMYX_D8575N.pdf
DSS Drain-Source Breakdown Voltage V GSV I =D50μA 30 V DSS Zero Gate Voltage Drain Current(Tc=25℃) V DS0V, V =0GS 1 μA GSS Gate-Body Leakage Current VGS±20V, V =DS ±100 nA V GS(th) Gate Threshold Voltage VDSV ,GS =D50μA 1.0 1.5 2.5 V VGS10V, I D15A 6.7 8.0 mΩ R DS(ON) Drain-Source On-State Resistance 2
in „Lidl kann auch anders (Lötstation)“ · Mechanik, Gehäuse, Werkzeug ·
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PDF
564746-da-01-en-MOSFET_N_KA_800V_STP4N80K5_TO_220AB_STM.pdf
current GS = 0) VDS = 800 V, TC=125 °C 50 µA Gate-body leakage IGSS current (V = 0) VGS = ± 20 V ±10 µA DS V Gate threshold voltage V = V , I = 100 µA 3 4 5 V GS(th) DS GS D Static drain-source on- RDS(on) VGS = 10 V, D = 1.5 A 2.1 2.5 Ω resistance Table 5. Dynamic Symbol Parameter Test conditions Min. Typ
in „Anodenspannungsstabilisierung für Röhrenverstärker mit IRF840 als Längsregler“ · Analoge Elektronik und Schaltungstechnik ·
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3004rg.pdf
0.25mA (All Transistors) 55 - - V VDS=55V V GS=0V (Q1,Q4) - - 25 µA Drain-Source Leakage Current V DS=-55V V GS=0V (Q2,Q3) - - -25 µA Gate-Source Leakage Current VGS=±20V V DS =0 (All Transistors) - - ±100 nA V DS=V GS D =250µA (Q1,Q4) 2.0 - 4.5 V Gate-Source Threshold Voltage V DS=V GS D =250µA (Q2,
in „Motorbrücke 24V/10A“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
P-MOSFETsi3445dv.pdf
(G-S) MOSFET FEATURES PRODUCT SUMMARY V (V) R (Ω) I (A) • Halogen-free According to IEC 61249-2-21 DS DS(on) D Definition 0.042 at GS = - 4.5 V ± 5.6 TrenchFET Power MOSFETs - 8 0.060 at GS = - 2.5 V ± 4.7 1.8 V Rated 0.080 at GS = - 1.8 V ± 2.9 Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View
in „richtiger n-Kanal MOSFET, 3,3V soll 5V und 100mA schalten“ · Analoge Elektronik und Schaltungstechnik ·