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AN162.pdf
the DS18X20/DS1822 1-Wire® temperature sensor in a microcontroller environment Abstract: This application introduces the user to simple 1-Wire software for interfacing a microcontroller to the DS18B20, DS18S20
in „Temperaturfühler identifizieren“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
messung.c
bestückt return (DS18B20_12_BIT/TIMERBASE); // Wartezeit zurückgeben } MES_DEBUG("\r\n*** Messung fehlgeschlagen. (Kurzschluss?) ***"); return 0; // es wird kein Timer eingeschaltet #else return 1; // Timer auf Minimalzeit
in „Ulrich Rading Logdatei ändern“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ds18b20.h
ODR offset #define GPIOx_IDR_OFFSET GPIOC_IDR_OFFSET // GPIOC IDR offset #define GPIOx_PIN 0 #define DS18B20_PIN *(vu32 *)(PERIPH_BB_BASE + (GPIOx_ODR_OFFSET * 32) + (GPIOx_PIN * 4)) // PC 12 #define DS18B20_PIN_IN *(vu32 *)(PERIPH_BB_BASE + (GPIOx_IDR_OFFSET * 32) + (GPIOx_PIN * 4)) // PC 12 #define NOP() asm("nop"); void us_Delay(u16 us); void ms_Delay(u16 count); //????? u8 DS18B20_Reset(void); u8 DS18B20_Read_Byte(void); //???? void DS18B20_Write_Byte(u8 dat); //????? void Temperature_Convert(void); u16 Get_Temperature(void); u16 DS18B20_Read_ROM(void); //?????? void Initialize_DS18B20
in „STM32 DS1820“ · Mikrocontroller und Digitale Elektronik ·
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Datei
diagramm.asm
l schen push ds ;Datensegment retten mov dx,cs mov ds,dx mov si,offset menue ;Text ausgeben 2 -> Men mov di,menuestart ;Ausgabestart am Bildschirm mov dl,12 NZ000: mov cx,46 ;Anzahl Zeichen pro Zeile EZ000: movsb inc
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STW12NK90Z.pdf
STW12NK90Z N-channel 900V - 0.72Ω- 11A - TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type VDSS RDS(on) D pW STW12NK90Z 900V <0.88Ω 11A 230W ■ Extremely high dv/dt capability ■ 100% avalanche
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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MOSFET_Gate_Driver_Circuit.pdf
self-turn-on phenomenon to occur, only the gate resistor R asso4iated with Q was cha1ged in Figure 4.12. Figure 4.13 shows waveforms without a self-turn-on phenomenon and Figure 4.14 shows waveforms with a self-turn-on phenomenon. MOSFET Q 1 Load i = C ・dv / dt iD DG gd DS Cgd inductance D G S R 4 300V ＋ MOSFET Q 2 R1 － R D ＋ 10V 2 R 3 G vDS － S 5V vGS Figure 4.12 Test circuit for self-turn-on waveforms @R 41 Ω, R3=1 Ω @R4=50 Ω, R3=1 Ω vGS ) ) ( iDG ( ( ( S G S G G D G D v i v i iDG vGS t (ns) t (ns) trrurrent flowing through the body Current
in „MOSFET npn/pnp Driver“ · Analoge Elektronik und Schaltungstechnik ·
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MOSFET_Gate_Drive_Circuit_.pdf
self-turn-on phenomenon to occur, only the gate resistor R asso4iated with Q was cha1ged in Figure 4.12. Figure 4.13 shows waveforms without a self-turn-on phenomenon and Figure 4.14 shows waveforms with a self-turn-on phenomenon. MOSFET Q 1 Load i = C ・dv / dt iD DG gd DS Cgd inductance D G S R 4 300V ＋ MOSFET Q 2 R1 － R D ＋ 10V 2 R 3 G vDS － S 5V vGS Figure 4.12 Test circuit for self-turn-on waveforms @R 41 Ω, R3=1 Ω @R4=50 Ω, R3=1 Ω vGS ) ) ( iDG ( ( ( S G S G G D G D v i v i iDG vGS t (ns) t (ns) trrurrent flowing through the body Current
in „Gatebeschaltung Treiber“ · Analoge Elektronik und Schaltungstechnik ·
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Viper12A.pdf
(See note 1) Coss Drain Capacitance V DS=25V 40 pF Note: 1. On clamped inductive load 3/15 VIPer12ADIP / VIPer12AS ELECTRICAL CHARACTERISTICS (T=25°C, V =18V, unless otherwise specified) j DD SUPPLY SECTION Symbol Parameter Test Conditions
in „LiIon 18650 Ladegerät für zwei Parallel“ · Mikrocontroller und Digitale Elektronik ·
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LTC4414_Power_Manegement.pdf
periods may affect device Note 6: VINs held at 12V and SENSE is stepped from11.8V to 12.2V to reliability and lifetime. trigger the event. GATE voltage is initially internally clamped at . G(ON) Note 2: The LTC4414E is guaranteed to meet performance
in „P-Mosfet als Schalter“ · Analoge Elektronik und Schaltungstechnik ·
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DDZ97xx.pdf
50 0.1 6.9 DDZ9697S HQ 10 9.50 10.50 50 0.1 7.6 DDZ9698S HR 11 10.45 11.55 50 0.05 8.4 DDZ9699S HS 12 11.40 12.60 50 0.05 9.1 DDZ9700S HT 13 12.35 13.65 50 0.05 9.8 DDZ9701S HU 14 13.30 14.70 50 0.05 10.6 DDZ9702S HV 15 14.25 15.75 50 0.05 11.4 DDZ9703S HW 16 15.20 16.80 50 0.05 12.1 DDZ9705S (Note 5
in „Komparator für 24V LOW BAT“ · Analoge Elektronik und Schaltungstechnik ·
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bluenrg-2.pdf
One bit by IO: 2:0 SLEEPIO_OUT 0x00 RW Bit0: IO9 Bit1: IO10 Bit2: IO1 31:4 RESERVED 0x00 RW RESERVED DS12166 - Rev 5 page 12/175 BlueNRG-2 Clocks and reset management Table 9. SYSTEM_CTRL - SLEEPIO_DS register description: address offset SYSTEM_CTRL_BASE_ADDR+0x14 Bit Field name Reset RW Description Configure
in „DC/DC-Wandler im ST BlueNRG-2 - Wofür?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
owucnet.c
ONEWIRE_CMD_READROM 0x33 #define ONEWIRE_CMD_MATCHROM 0x55 #define ONEWIRE_CMD_SKIPROM 0xcc #define DS18B20_ROM_FAMILYID 0x28 #define DS18B20_CMD_CONVERTTEMP 0x44 #define DS18B20_CMD_RSCRATCHPAD 0xbe #define DS18B20_DECIMAL_STEPS_12BIT 625 //.0625 #define DS18B20_INVALIDTEMP 0xffff #define ONEWIRE_SENSORNAME_MAX
in „DS18B20: Mehrere Sensoren am Bus, nur letzte Temp. stimmt“ · Mikrocontroller und Digitale Elektronik ·
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WM12-DIN_20Data_D.pdf
Feuchtigkeit≤0.3vomEB, Für 500msSpannnung/Strom: 2Un/36A 60%bis90%r .F. Technische Änderungen vorbehalten WM12-DIN DS 100806 1 WM12-DIN Technische Daten Serielle Schnittstelle RS485 RS422/RS485 (auf Anfrage) Daten (bidirektional) Typ Fernbus Dynamisch (nur Lesen) Netz- und Phasengrößen bidirektional (statische
in „Drehstromzähler“ · Projekte & Code ·
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irf9z34n.pdf
V GS = 0V, f = 1MHz ID = -10A C iss = Cgs + C gd , Cds SHORTED ) C rss = Cgd V 1000 C = C + C ( V DS = -44V oss ds gd g16 V DS = -28V ) t p o ( 800 C iss V c e n r12 i u c 600 C oss S a o a - 8 C t , 400 a C G C rss , G4 200 V - FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 10 20 30 40 -VDS , Drain-to-Source
in „IRF9Z34N als Ersatz für BUZ171“ · Analoge Elektronik und Schaltungstechnik ·
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IRL1004_IR.pdf
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL1004PbF V L 1800 DS J ID D.U.T. ( TOP 32A y 55A RG + r1500 BOTTOM 78A V n - DD E e1200 4.5V AS c p a 0.01Ω a v 900 e Fig 12a. Unclamped Inductive Test Circuit l u 600 e g i S 300 , V(BR)DSS A E 0 p 25 50 75 100 125 150 175 Starting T , Junction Temperature ( C) VDD J Fig 12c. Maximum Avalanche Energy V DS Vs.DrainCurrent IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ Q .2µF G 12V .3µF 4.5 V + QGS Q GD VDS D.U.T. - V VG GS 3mA Charge
in „Schon wieder: Verpolungsschutz-MOSFET und LogicLevel-FET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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IRL1004_IR.pdf
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRL1004PbF V L 1800 DS J ID D.U.T. ( TOP 32A y 55A RG + r1500 BOTTOM 78A V n - DD E e1200 4.5V AS c p a 0.01Ω a v 900 e Fig 12a. Unclamped Inductive Test Circuit l u 600 e g i S 300 , V(BR)DSS A E 0 p 25 50 75 100 125 150 175 Starting T , Junction Temperature ( C) VDD J Fig 12c. Maximum Avalanche Energy V DS Vs.DrainCurrent IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ Q .2µF G 12V .3µF 4.5 V + QGS Q GD VDS D.U.T. - V VG GS 3mA Charge
in „Schon wieder: Verpolungsschutz-MOSFET und LogicLevel-FET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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P-MOSFET_IRF9Z34N.pdf
V GS = 0V, f = 1MHz ID = -10A C iss = Cgs + C gd , Cds SHORTED ) C rss = Cgd V 1000 C = C + C ( V DS = -44V oss ds gd g16 V DS = -28V ) t p o ( 800 C iss V c e n r12 i u c 600 C oss S a o a - 8 C t , 400 a C G C rss , G4 200 V - FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 10 20 30 40 -VDS , Drain-to-Source
in „Pegelwandler 0/5V zu 5V/-9V“ · Mikrocontroller und Digitale Elektronik ·
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funkmodul.pdf
315MHz FCC Compliant for use in USA • Range AM upto 100metres FM upto 200metres FMNB upto 1000metres DS118-3 Nov 04 ©2004 REG No 277 4001, ENGLAND. Page 1 118, 128, K EELOQ R EMOTE C ONTROL S YSTEMS , 12 / 24Vdc, 10208 433MHz Products AM Remote Control Systems Freq Range** Part Number Description Transmitter
in „led dimmerschaltung“ · Mikrocontroller und Digitale Elektronik ·
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Datei
DS18B20.c
/* * DS18B20.c * * Created: 27.07.2021 21:12:53 * Author: User */ #include <avr/io.h> #include "../header/DS18B20.h" #include <util/delay.h> void ds_masterreset(){ DS_OUT; _delay_us(DS_MASTERRESET_US); DS_IN
in „Ds18B20 Zeigt zu höhe Werte“ · Mikrocontroller und Digitale Elektronik ·
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CS8130.pdf
Start Data Address Stop Bit Bit RXD CD0 CD1 CD2 CD3 AD0 AD1 AD2 AD3 Figure 7. Control Mode Timing 12 DS134PP2 CS8130 Control Data Byte Format D7 D6 D5 D4 D3 D2 D1 D0 AD3 AD2 AD1 AD0 CD3 CD2 CD1 CD0 BIT NAME VALUE FUNCTION AD3-0 Register Address 0_0000 0 Control register #1 (4 bits of 0_0001 1 Control
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MCP738312.pdf
Fast Charge Current I 90 100 110 mA PROG = 10 k REG Regulation 450 505 550 mA PROG = 2.0 kNote 1 12.5 14.5 16.5 mA PROG = 67 k TA = -5°C to +55°C Note 1: Not production tested. Ensured by design. 2005-2014 Microchip Technology Inc. DS20001984G-page 3 MCP73831/2 DC CHARACTERISTICS (CONTINUED) Electrical
in „MCP73832 Beschaltung für die Auswertung mit µC“ · Mikrocontroller und Digitale Elektronik ·
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app162__Interfacing_DS1820_in_a_MC_environment_.pdf
for the TM Wire devices such as the DS18B20, DS18S20 or DS18B20, DS18S20 and DS1822 is available in their DS1822 to a microcontroller. These methods range respective datasheets, which can be obtained from from simple software solutions, to
in „DS18B20 zu komplizierte Ansteuerung?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
app162__Interfacing_DS1820_in_a_MC_environment_.pdf
for the TM Wire devices such as the DS18B20, DS18S20 or DS18B20, DS18S20 and DS1822 is available in their DS1822 to a microcontroller. These methods range respective datasheets, which can be obtained from from simple software solutions, to
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AN-9010b_MOSFET_Basics__FAI.pdf
more, and the channel region which maintained the minimum thick- ness expands towards the source. V DS becomes V DS >V GS–V GS(th)due to the increase of the DD , and the IDis kept constant. 4) Turn-off transient The reverse process of the turn-on transient is turn-off transient. Rev C, November 1999 12
in „mit 2,7V schalten“ · Mikrocontroller und Digitale Elektronik ·
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625945.pdf
0 2 4 6 8 10 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ID– VGS V DS – VGS 20 ) 10 ( COMMON SOURCE COMMON SOURCE V = 20 V S Tc = 25℃ A 16 DS D 8 PULSE TEST ( PULSE TEST V I G 12 A 6 N L D = 10 A E O R V R 8 E 4 C C N Tc = −55°C U I O R 4 100 - 2 5 D I 25 A 2.5 R 0 D 0 0 2 4 6 8 10 0 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) GATE-SOURCE VOLTAGE V GS (V) ⎪Yfs⎪ –DI R DS (ON)– D E 100 10 COMMON SOURCE C E N C Tc = 25°C T A PULSE TEST I T M Tc = −55°C I D 10 S ) A ) 25 R ( R ( 100 N F O N 1
in „Bauteilbestimmung H32 U3J“ · Mikrocontroller und Digitale Elektronik ·
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AO4410.pdf
Field Effect Transistor General Description Features The AO4410 uses advanced trench technology to V DS(V) = 30V provide excellent DS(ON) shoot-through immunity, ID= 18A (VGS = 10V) body diode characteristics and ultra-low gate R DS(ON) 5.5mΩ (V GS= 10V) resistance. This device is ideally suited for use
in „Falsches Ladegerät am Notebook :-(“ · Mikrocontroller und Digitale Elektronik ·
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AO3404A.pdf
Transistor General Description Features The AO3404A uses advanced trench technology to V (V) = 30V DS provide excellent DS(ON)and low gate charge. This D = 5.8A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)< 25m (VGS = 10V) applications. R < 35m (V = 4.5V) DS(ON) GS SOT23
in „unbekante SMD code (Fujitsu Esprimo X913T Motherboard D3204)“ · Analoge Elektronik und Schaltungstechnik ·
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pic18f2320.pdf
selected bank (BSR<3:0>) to the registers of the Access Bank. 3: The MOVFF instruction embeds the entire 12-bit address in the instruction. 2003 Microchip Technology Inc. DS39599C-page 65 PIC18F2220/2320/4220/4320 5.12 Indirect Addressing, INDF and If INDF0, INDF1 or INDF2 are read indirectly via an FSR
in „I2C-Bus Collision“ · Mikrocontroller und Digitale Elektronik ·
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MOSFET_IRF630_N-Ch_TO-220AB_200V_9_A.pdf
Current I V = ±20V - - ±100 nA GSS GS Drain to Source On Resistance (Note 2) rDS(ON) ID= 5A, V GS = 10V (Figure 8, 9) - 0.25 0.4 Ω Forward Transconductance (Note 2) gfs V DS > D(ON) x DS(ON)MAX D, I = 5A (Figure 12) 3 4.8 - S Turn-On Delay Time d(ON) V DD = 90V, D ≈ 9A, RGS = 9.1Ω
in „Hilfe bei transistor auswahl/suche“ · Analoge Elektronik und Schaltungstechnik ·
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LM74.pdf
Computers −55˚C to 125˚C ±3˚C(max) S n Disk Drives n n Office Electronics s o r Simplified Block Diagram DS100909-1 MICROWIRE is a registered trademark of National Semiconductor Corporation. © 1999 National Semiconductor CorporaDS100909 www.national.com 7 M L Connection Diagram SO-8 DS100909-2 TOP VIEW NS
in „suche I2C Themperatursensor, auf 0,1°C genau“ · Mikrocontroller und Digitale Elektronik ·
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tpc8123.pdf
= −2.0 V VGS = −2.1 V 0 0 0 −0.2 −0.4 −0.6 −0.8 −1 0 −0.4 −0.8 −1.2 −1.6 −2 Drain−source voltage V DS (V) Drain-source voltage VDS (V) ID – V GS V DS – V GS −40 −0.4 Common source Common source VDS = −10 V ) Ta = 25°C Pulse test ( −32 Pulse test A S −0.3 ( V I −24 e t a n l −0.2 r v c −16 e n r a o D
in „Autobatterie Ladegerät Transistor defekt - Äquivalentes Bauteil“ · Analoge Elektronik und Schaltungstechnik ·
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PIC16F1503.pdf
locations read as ‘0’. Shaded cells are not used by PORTC. 2011 Microchip Technology Inc. Preliminary DS41607A-page 107 PIC16(L)F1503 NOTES: DS41607A-page 108 Preliminary 2011 Microchip Technology Inc. PIC16(L)F1503 12.0 INTERRUPT-ON-CHANGE 12.3 Interrupt Flags The PORTA and PORTB pins can be configured
in „Versorgungsspannung vom PIC mit PIC messen“ · Mikrocontroller und Digitale Elektronik ·
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LM61.pdf
Thermal Resistance Thermal Time Constant Thermal Response in Junction to Air Still Air with Heat Sink DS012897-3 DS012897-4 DS012897-5 Thermal Response Thermal Response in Still in Stirred Oil Bath Quiescent Current with Heat Sink Air without a Heat Sink vs. Temperature DS012897-6 DS012897-8 DS012897-9
in „R8C/13 Software-Verständnisfrage“ · Mikrocontroller und Digitale Elektronik ·
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ds18s20.pdf
signals, with the exception of the presence pulse, are initiated by the bus master. 12 of 27 DS18S20 The initialization sequence required to begin any communication with the DS18S20 is shown in Figure 10. A reset pulse followed by a presence pulse indicates the DS18S20 is ready to send
in „Messabweichung beim 1-wire DS1“ · Mikrocontroller und Digitale Elektronik ·
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PDF
datasheet_002.pdf
signals, with the exception of the presence pulse, are initiated by the bus master. 12 of 27 DS18S20 The initialization sequence required to begin any communication with the DS18S20 is shown in Figure 10. A reset pulse followed by a presence pulse indicates the DS18S20 is ready to send
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Mikrocontroller-PIC18F2420.pdf
primary oscillator modes. When disabled, these bits read as ‘0’. © 2008 Microchip Technology Inc. DS39631E-page 125 PIC18F2420/2520/4420/4520 NOTES: DS39631E-page 126 © 2008 Microchip Technology Inc. PIC18F2420/2520/4420/4520 A simplified block diagram of the Timer1 module is 12.0 TIMER1 MODULE shown
in „Spannungseinbruch beim Sampeln des Signals“ · Mikrocontroller und Digitale Elektronik ·
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drv8350f_7_.pdf
DRV8350F, DRV8353F SLVSFV1B – AUGUST 2018 – REVISED AUGUST 2021 www.ti.com 13 nC IDRIVEN2 87 mA 150 ns (12) Select a value for I that is between 87 mA and 260 mA. For this example, the value of I was DRIVEN DRIVEN selected as 200-mA sink. 9.2.1.2.3 V Overcurrent Monitor Configuration DS The V monitors are configured based on the worst-case motor current and the R of the external DS DS(on) MOSFETs as shown in Equation 13. VDS_OCP ! max u R DS(on)max (13) 9.2.1.2.3.1DS Overcurrent Example The goal of this example is to set the V DS monitor to trip at a current greater than 75 A.
in „BLDC-Motor: Überspannung beim Bremsen trotz Durchschaltung aller Low-Side-MOSFETs?“ · Analoge Elektronik und Schaltungstechnik ·
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Datenblatt_NVSRAM_23LCV1024.pdf
Measurement Reference Level: Input 0.5 VCC Output 0.5 VCC 2012 Microchip Technology Inc. Preliminary DS25156A-page 3 23LCV1024 FIGURE 1-1: SERIAL INPUT TIMING (SPI MODE) 4 CS 2 7 11 8 3 SCK 5 6 SI MSB in LSB in High-Impedance SO FIGURE 1-2: SERIAL OUTPUT TIMING (SPI MODE) CS 9 10 3 SCK 12 14 13 SO MSB
in „Probleme mit SRAM 23LCV1024“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS1821.pdf
OPERATION – STANDALONE THERMOSTAT section of this datasheet. Communications can be re-establish with the DS1821 while it is in thermostat mode by pulling V DD to 0V while the DQ line is held high, and then toggling the DQ line low 16 times as shown in Figure 12. This temporarily places the DS1821 in 1-wire
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EL12864A.pdf
SEG128 C64 C1 R CR C M FRM CLK1 CLK2 K CL2 S VDD 0 SHL 1 FS 0 S1 S64 MS 7 M B FRM PCLK2 KS0108B CLK1 DS2 CLK2 DS1 (Bottom view) CL2 VSS R V S B C C V VV V V V E C ET 0 R R S S S E V V V V V V V A 0 12 3 4 5 E 3 B ] S W E B B S E 5 4 3 2 1 0 D C VSS VDD 12 V0 V1 U E P VSS V2 RW M RS V3 DB[0:7] RESETB V4
in „LCD Display Powertip PG-12864A“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS1821.pdf
OPERATION – STANDALONE THERMOSTAT section of this datasheet. Communications can be re-establish with the DS1821 while it is in thermostat mode by pulling V DD to 0V while the DQ line is held high, and then toggling the DQ line low 16 times as shown in Figure 12. This temporarily places the DS1821 in 1-wire
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lm3150.pdf
-102 COILCRAFT L23 0.68 9-12 L24 0.47 9-12 L25 22 12-15 SER2817H-223KL COILCRAFT L26 15 12-15 L27 10 12-15 SER2814L-103KL COILCRAFT L28 6.8 12-15 7447709006 WURTH L29 4.7 12-15 7447709004 WURTH L30 3.3 12-15 L31 2.2 12-15 L32 1.5
in „LM3150 zu geringe Ausgangsspannung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irfb3077pbf.pdf
On-Resistance ––– 2.8 3.3 mΩ V = 10V, I = 75A g GS D VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS= VGS ID= 250μA DSS Drain-to-Source Leakage Current ––– ––– 20 μA V DS= 75V, VGS= 0V ––– ––– 250 V DS= 75V, VGS= 0V, TJ= 125°C GSS Gate-to-Source Forward Leakage ––– ––– 100 nA V GS= 20V Gate-to-Source
in „Suche nach Treiber für Power-Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlml6402pbf.pdf
––– S VDS = -10V, D = -3.7A ––– ––– -1.0 V = -20V, V = 0V IDSS Drain-to-Source Leakage Current µA DS GS ––– ––– -25 VDS = -20V, GS = 0V, TJ= 70°C Gate-to-Source Forward Leakage ––– ––– -100 V = -12V GSS nA GS Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Q Total Gate Charge ––– 8.0 12 I = -3.7A
in „TP4056 Polarity protection“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PIC_18F8722_Data_Sheet.pdf
Reset, INTOSC defaults to 1 MHz. 3: TOST is the Oscillator Start-up Timer (parameter 32, Tablerc8-12). t is the PLL Lock-out Timer (parameter F12, Table 28-7); it is also designatPLL.s T 4: Execution continues duringIOBST(parameter 39, Table 28-12), the INTOSC stabilization period. DS39646C-page 48
in „PIC 18F6527 mit 32MHz Takten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PIC18f6622.pdf
Reset, INTOSC defaults to 1 MHz. 3: TOST is the Oscillator Start-up Timer (parameter 32, Tablerc8-12). t is the PLL Lock-out Timer (parameter F12, Table 28-7); it is also designatPLL.s T 4: Execution continues duringIOBST(parameter 39, Table 28-12), the INTOSC stabilization period. DS39646B-page 48
in „PIC 18F6622 Zeit um EEPROM zu schreiben“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ATtiny416_50002683A.pdf
Description Shared Functionality PB4 User button Edge connector © 2017 Microchip Technology Inc. User Guide DS50002683A-page 12 ATtiny416 Xplained Nano 5. Embedded Debugger Implementation ATtiny416 Xplained Nano contains a Mini Embedded Debugger (mEDBG) that can be used to program the ATtiny416 using Tiny Program
in „Neue 8-Bit Tinys vorgestellt: 417/814/816/817“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlml2502.pdf
= 4.0A fs DS D ––– ––– 1.0 VDS= 16V, VGS= 0V IDSS Drain-to-Source Leakage Current ––– ––– 25 µA V = 16V, V = 0V, T = 70°C DS GS J Gate-to-Source Forward Leakage ––– ––– -100 VGS= -12V GSS Gate-to-Source Reverse Leakage ––– ––– 100 nA V = 12V GS Qg Total Gate Charge ––– 8.0 12 D = 4.0A Q Gate-to-Source Charge ––– 1.8 2.7 nC V = 10V gs DS Qgd Gate-to-Drain ("Miller") Charge ––– 1.7 2.6 VGS= 5.0V t Turn-On Delay Time ––– 7.5 ––– V = 10V d(
in „suche Transistor 5V 2A“ · Analoge Elektronik und Schaltungstechnik ·
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XC866_ds_v12.pdf
Data Sheet, V1.2, Oct. 2007 XC866 8-Bit Single-Chip Microcontroller Microcontrollers Edition 2007-10 Published by Infineon Technologies AG, 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities
in „Wie schnell ist der Counter eines 8-Bir µC's“ · Mikrocontroller und Digitale Elektronik ·
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DS12C509.sch.pdf
20.03.2007 10:35:57 f=0.65 C:/Dokumente und Einstellungen/Ingo Kühling/Eigene Dateien/Temp/DS12C509.sch (Sheet: 1/1)