-
PDF
SI4946BEY.pdf
Static Drain-Source Breakdown Voltage VDS VGS = 0 V,DI = 250 µA 60 V V Temperature Coefficient ΔV /T 53 DS DS J D = 250 µA mV/°C VGS(th)Temperature Coefficient ΔVGS(th)TJ - 6.7 Gate-Source Threshold Voltage VGS(th) V DS= V GS, D = 250 µA 1.0 2.4 3.0 V Gate-Source Leakage GSS VDS = 0 V, GS = ± 20 V ± 100 nA
in „Frage zu Ic SI4948“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
LTC3824fg.pdf
vs R SET ΔV REF vs Temperature 0.4 700 5 600 4 0.2 3 z500 V ( V ( Y ( 2 E 0 N400 E VR U V 1 Δ E ∆ F300 –0.2 0 200 –1 –0.4 100 –2 0 10 20 30 40 50 60 100 200 300 400 –75 –50 –25 0 25 50 75 100 125 150 V CC(V) R SETkΩ) DIE TEMPERATURE (°C) 3824 G04 3824 G05 3824 G06 3824fg 4 LTC3824 Typical Performance
in „DC/DC Wandler Vin 15-50V, Vout 12V 9A!“ · Analoge Elektronik und Schaltungstechnik ·
-
Datei
temp2.c
Start mit Master-Reset-Impuls u. Abfrage: Slave presence Bus_Reset(); // Skip ROM-Befehl, da nur ein DS1820 angeschlossen ist Byte_Schreiben(0xCC); Byte_Schreiben(0x44); // Befehl: Start Conversion an DS1820 _delay_ms(1000); // >800 ms warten // 2.Befehlszyklus: Messwerte (Scratch Pad) auslesen // Start
in „DS18S20, Atmega8, AVR Studio“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
LM2660_DC_Inverter.pdf
Resistance vs Supply Voltage DS012911-7 DS012911-8 DS012911-9 Output Source Efficiency vs Load Resistance vs Output Voltage Drop Temperature Current vs Load Current DS012911-11 DS012911-12 DS012911-10 3 www.national.com 1 6 2 Typical
in „Negative Betriebsspannung erzeugen“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
top222y.pdf
TOP223 Tj= 25 °C 7.8 9.0 D = 100 mA Tj= 100 °C 12.9 15.0 ON-State R TOP224 Tj= 25 °C 5.2 6.0 Resistance DS(ON) D = 150 mA Tj= 100 °C 8.6 10.0 TOP225 Tj= 25 °C 3.9 4.5 I = 200 mA T = 100 °C D j 6.4 7.5 TOP226 T = 25 °C j 3.1 3.6 I = 250 mA T = 100 °C D j 5.2 6.0 TOP227 T = 25 °C j 2.6 3.0 I = 300 mA T = 100
in „Suche Ersatz für TOP222Y“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
L6207.pdf
SW Tj [°C] Figure 29. Typical low-side R vs. supply Figure 30. Typical drain-source diode forward DS(ON) voltage ON characteristic R DS(ON)[] ISD[A] 0.300 3.0 Tj= 25 °C 0.296 2.5 Tj= 25 °C 0.292 2.0 0.288 1.5 0.284 1.0 0.280 0.5 0.276 0.0 700 800 900 1000 1100 1200 1300 0 5 10 15 20 25 30 V [mV] VS
in „Schrittmotor mit L6207“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
1822670.pdf
SW Tj [°C] Figure 29. Typical low-side R vs. supply Figure 30. Typical drain-source diode forward DS(ON) voltage ON characteristic R DS(ON)[] ISD[A] 0.300 3.0 Tj= 25 °C 0.296 2.5 Tj= 25 °C 0.292 2.0 0.288 1.5 0.284 1.0 0.280 0.5 0.276 0.0 700 800 900 1000 1100 1200 1300 0 5 10 15 20 25 30 V [mV] VS
in „Treiberstufe fuer Faulhaber Schrittmotor“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
MOSFET-Basics_AN-9010.pdf
equation. -------- R DS(on)(T) = R DS(on)(25°C) 300 where T: absolute temperature This is an important characteristic of device stability and paralleling. It doesn’t need any external circuit’s assistance to have good current
in „MOSFET ohne Body-Diode“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
IRLR7843C.pdf
°C 0.1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 e I = 30A c D ) t VGS = 10V ( i t e n R r 100 n 1.5 u T J 175°C e ) e r d r o i o - al - t r t TJ= 25°C i o i 10
in „H-Brücke - 30A - MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
irlr3717.pdf
HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power V DSS R DS(on) max Qg l High Frequency Isolated DC-DC 20V 4.0m : 21nC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low R DS(on)at 4.5V VGS l Ultra-Low Gate Impedance
-
PDF
lm317-1.pdf
Characteristics Output Capacitor = 0 µF unless otherwise noted Load Regulation Current Limit Adjustment Current DS009063-37 DS009063-38 DS009063-39 Dropout Voltage Temperature Stability Minimum Operating Current DS009063-40 DS009063-41 DS009063-42 Ripple Rejection Ripple Rejection Ripple Rejection DS009063-43 DS009063-44 DS009063-45 Output Impedance Line Transient Response Load Transient Response DS009063-47 DS009063-48 DS009063-46 www.national.com 4 Application Hints aluminum electrolytic) on the output swamps this effect
in „Konstantstromquelle“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
LM317__NAT.pdf
Characteristics Output Capacitor = 0 µF unless otherwise noted Load Regulation Current Limit Adjustment Current DS009063-37 DS009063-38 DS009063-39 Dropout Voltage Temperature Stability Minimum Operating Current DS009063-40 DS009063-41 DS009063-42 Ripple Rejection Ripple Rejection Ripple Rejection DS009063-43 DS009063-44 DS009063-45 Output Impedance Line Transient Response Load Transient Response DS009063-47 DS009063-48 DS009063-46 www.national.com 4 Application Hints aluminum electrolytic) on the output swamps this effect
in „Frage zu Spannungs/Stromregelschaltung“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
irf7401.pdf
Normalized On-Resistance Vs. Temperature IRF7401 3000 10 V GS = 0V, f = 1MHz ID = 4.1A C iss= Cgs + Cgd , C ds SHORTED ) V DS = 16V C rss= Cgd ( 2500 C oss= Cds + Cgd e 8 g ) l p Ciss o ( 2000 V c c 6 n u i 1500 o a Coss - p t a e 4 , 1000 a C G , C rss G2 500 V FOR TEST CIRCUIT SEE FIGURE 12 0 A 0 A 1 10 100
in „kleiner FET“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
2sk3115.pdf
2SK3115 Isolated TO-220 • Gate voltage rating ±30 V • Low on-state resistance ★ (Isolated TO-220) R DS(on= 1.2 MAX. (V GS = 10 V, I = 3.0 A) • Avalanche capability ratings ABSOLUTE MAXIMUM RATINGS (T = 25°C) A Drain to Source Voltage (VGS = 0 V) VDSS 600 V Gate to Source Voltage (V DS= 0 V) VGSS ±30 V
in „Reparatur Schaltnetzteil“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
on-semiconductor-rfp70n06-mosfet.pdf
N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature r DS(on)= 0.014Ω ® sizes approaching those of LSI circuits, gives optimum Temperature Compensated PSPICE Model utilization of silicon, resulting in outstanding performance. Peak Current vs Pulse Width Curve
in „DC Wandler wiederbeleben“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
RE5VL-RICOH.pdf
VOUT Output Voltage V Nch V SS–0.3 to 12 IOUT Output Current 70 mA PD1 Power Dissipation 1 NOTE1) 300 mW PD2 Power Dissipation 2 NOTE2) 150 mW Topt Operating Temperature Range –30 to +80 ˚C Tstg Storage Temperature Range –55 to +125 ˚C Tsolder Lead Temperature (Soldering) 260˚C,10s (NOTE 1) applied
in „12V Tiefentladeschutz ohne Eigenverbrauch“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
RE5VL-RICOH.pdf
VOUT Output Voltage V Nch V SS–0.3 to 12 IOUT Output Current 70 mA PD1 Power Dissipation 1 NOTE1) 300 mW PD2 Power Dissipation 2 NOTE2) 150 mW Topt Operating Temperature Range –30 to +80 ˚C Tstg Storage Temperature Range –55 to +125 ˚C Tsolder Lead Temperature (Soldering) 260˚C,10s (NOTE 1) applied
in „Wie sprunghafte Bereitstellung der Betriebsspannung für MC realisieren?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
Article_Linear_Power_MOSFETs.pdf
circuit or off.In the ohmic region,the � deviceactsasaresistorwithanalmostconstanton-resistance � (R DS ) and is equal to the drain voltage (V ) divDSed by ��������������� ON ����������� the drain current (I ).DS the linear mode of operation,the �������� device operates in the current-saturated region
in „Stromsenke / el. Last“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
IRF7401_IR.pdf
25 µA V = 16V, V = 0V, T = 125 °C DS GS J I Gate-to-Source Forward Leakage 100 nA VGS = 12V GSS Gate-to-Source Reverse Leakage -100 V = -12V GS Qg Total Gate Charge 48 D = 4.1A Q Gate-to-Source Charge 5.1 nC V = 16V gs DS Qgd Gate-to-Drain
in „IRF7401 - Rds(On)?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
MOSFET_oder_bipolarer_Transistor__Zetex.pdf
BV / BV R I (A) h (min) Package CBO EBO CE(sat) C FE BVCES(V) (V) (mΩ) Singles FMMT618 20 5 52 2.5 300 SOT23 FMMT619 50 5 75 2.0 300 SOT23 ZXTBM322 40 7.5 47 4.5 300 2x2mm MLP 3-L ZXT13N15DE6 40 7.5 29 5.0 300 SOT23-6 ZXT13N20DE6 50 7.5 38 4.5 300 SOT23-6 FZT1048A 50 5 50 5.0 300 SOT223 FZT1049A 80 5 50 5.0 300 SOT223 ZXTCM322 100 7.5 68 4.0 300 2x2mm MLP 3-L Duals ZXT10N20DE6 20 5 52 4.0 300 SOT23-6 ZXTDBM832 40 7.5 47 4.5 300 3x2mm MLP 8-L ZDT619 50 5 75 2 300 SM-8 ZDT1048 50 5 50 5.0 300 SM-8 ZXTDCM832
in „mit 2,7V schalten“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
SUM55P06-19L.pdf
Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = - 250 µA Drain-Source Breakdown Voltage DS GS D - 60 V Gate-Threshold Voltage V V = V , I = - 250 µA - 1 - 3 GS(th) DS GS D Gate-Body Leakage GSS VDS = 0 V, GS = ± 20 V ± 100 nA V DS = - 60 V,GS = 0 V - 1 Zero Gate Voltage Drain Current DSS V DS = - 60 V,GS = 0 V, J = 125 °C - 50 µA V = - 60 V, V = 0 V, T = 175 °C DS GS J - 250 On-State Drain Current I V =- 5 V, V = - 10 V - 120 A D(on) DS GS VGS = - 10 V,DI = - 30 A 0.015 0.019 V GS= - 10
in „DC/DC Wandler Vin 15-50V, Vout 12V 9A!“ · Analoge Elektronik und Schaltungstechnik ·
-
Datei
Sensorversuch.c
Master-Reset-Impuls u. Abfrage: Slave presence Byte_Schreiben(0xcc); // Skip ROM-Befehl, da nur ein DS1820 angeschlossen ist Byte_Schreiben(0x44); // Befehl: Start Conversion an DS1820 _delay_ms(1000); // 800 ms warten // 2.Befehlszyklus: Messwerte (Scratch Pad) auslesen!!!! unsigned char i; Bus_Reset
in „DS18S20, Atmega8, AVR Studio“ · Mikrocontroller und Digitale Elektronik ·
-
Datei
temp2.c
Start mit Master-Reset-Impuls u. Abfrage: Slave presence Bus_Reset(); // Skip ROM-Befehl, da nur ein DS1820 angeschlossen ist Byte_Schreiben(0xCC); Byte_Schreiben(0x44); // Befehl: Start Conversion an DS1820 _delay_ms(1000); // >800 ms warten // 2.Befehlszyklus: Messwerte (Scratch Pad) auslesen // Start
in „DS18S20, Atmega8, AVR Studio“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
P0603BDL.pdf
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, D = 250mA 25 V Gate Threshold Voltage V GS(th) V DS= V GSI D 250mA 1.0 1.7 3.0 I V = 0V, V = ±20V Gate-Body Leakage GSS DS GS ±250 nA VDS = 20V, VGS = 0V 1 Zero Gate Voltage Drain Current IDSS mA VDS = 20V, VGS = 0V , J = 125 °C 10 1 On-State Drain Current D(ON) V DS= 10V, V GS = 10V 160 A V = 4.5V, I = 35A Drain-Source On-State R GS D 7 15 mΩ Resistance 1 DS(ON) V GS= 10V, ID= 35A 4.2 6.8 Forward Transconductance 1 gfs VDS = 5V, D = 20A 80 S DYNAMIC Input Capacitance
in „Am3 Mainboard Vcore instabil wenn kalt“ · PC Hard- und Software ·
-
PDF
mdlm7301.pdf
otherwise specified Supply Current vs VOS vs VOS vs V CM Supply Voltage Supply Voltage V = ± 1.1V S DS012842-3 DS012842-4 DS012842-5 V OS vs VCM VOS vs VCM Inverting Input, V = ± 2.5V V = ± 15V S S Bias Current vs Common Mode Voltage V = ± 1.1V S DS012842-6 DS012842-7 DS012842-8 5 www.national.com = =
in „Problem mit OP als Spannungsfolger vor ADC“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
71858.pdf
VGS(th) VDS = VGS ,DI = 250 µA 0.6 1.4 V Gate-Body Leakage GSS VDS = 0 V, VGS = ± 8 V ± 100 nA I V DS = 12 V, GS = 0 V 1 Zero Gate Voltage Drain Current DSS V = 12 V, V = 0 V, T = 70 °C 5 µA DS GS J On-State Drain Currenta ID(on) V DS≥ 5 V, VGS = 4.5 V 40 A V GS = 4.5 V,DI = 17 A 0.0045 0.0055 Drain-Source On-State Resistance a R DS(on) Ω V GS = 2.5 V,DI = 14 A 0.0065 0.008 a Forward Transconductance gfs V DS = 6 V,DI = 17 A 80 S a Diode Forward Voltage VSD IS= 2.7 A, VGS = 0 V 0.70 1.1 V b Dynamic Total Gate Charge Q 21 30 g Gate-Source
in „Mosfet! Wie temperatur berechnen?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
Funkgeraeteliste_Chirp.pdf
-Dec-2022 Yes 0.00% Kenwood_TH-D72_clone_mode @kk7ds 28-Nov-2022 Yes 0.02% Kenwood_TH-D72_live_mode @kk7ds 21-Oct-2022 Yes 0.00% Kenwood_TH-D74_clone_mode @kk7ds 30-Nov-2022 Yes 0.00% Kenwood_TH-D74_live_mode @kk7ds 20-Oct-2022 Yes 0.00% Kenwood_TH-D7G
in „Welcher USB-Adapter für Baofeng UV-5R gut?“ · HF, Funk und Felder ·
-
PDF
datasheet.pdf
On–resistance Area Product about One–half that of Standard G 2 MOSFETs with New Low Voltage, Low R DS(on) Technology D PAK Faster Switching than E–FET Predecessors S Features Common to TMOS V and TMOS E–FETS Avalanche Energy Specified DSS and V DS(on) Specified at Elevated Temperature Static Parameters
in „verstärkerschaltung“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
LM2661.pdf
Resistance vs Supply Voltage DS012911-7 DS012911-8 DS012911-9 Output Source Efficiency vs Load Resistance vs Output Voltage Drop Temperature Current vs Load Current DS012911-11 DS012911-12 DS012911-10 3 www.national.com 1 6 2 Typical
in „pegelanpassung analog“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
HY2212_EN.pdf
package 3. Applications Multi Cells LiFePO4 Rechargeable Battery Packs. www.hycontek.comhnology Corp DS-HY221page4_EN HY2212 1 Cell Li-ion/Polymer Battery Charge Balance IC 4. Block Diagram 5. Ordering Information Product Name define . www.hycontek.comhnology Corp DS-HY2212page5EN HY2212 1 Cell Li-ion
in „LiFepo4 balancer - China ICs“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
DIS6531-DS08-0811.pdf
LED flash trigger output CONFIDENTIAL © Digital Imaging Systems 2008. All rights reserved. DIS6531-DS08-0811 Page 1 of 23 All brand and product names are trademarks or service marks of their respective owners. Printed in Europe. 1 3 5.0-Megapixel Camera Module with 5 6 Autofocus, Shutter & Aperture S
in „Ansteuerung Kameramodul“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
AN-9010b_MOSFET_Basics__FAI.pdf
8.86 x 10 [F/cm]) C : epitaxial layer background concentration [atoms/cm ] 3 B V DS: drain-to-source voltage φ : diode potential B As shown in the equation above, when V DS >> φB , Cdsdecreases as V DS increases with the rela- tion of C ∝ (1 V ). gd DS 2) Characteristics of the gate
in „mit 2,7V schalten“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
MBR10100CT.pdf
°C IRM 0.1 mA at Rated DC Blocking Voltage @ T C 125°C 50 Typical Junction Capacitance (Note 2) Cj 300 pF Typical Thermal Resistance Junction to Case (Note 1)RqJC 3.0 K/W Voltage Rate of Change dV/dt 10,000 V/ms Operating and Storage Temperature Range Tj, STG -65 to +150 °C Notes: 1. Thermal resistance
in „Dual High-Voltage Schottky Rectifiers 10A“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
Readme_130816.pdf
auslesen ds1631.py - TWI-Temperatursensor auslesen bmp085.py - TWI-Luftdruck-/Temperatursensor auslesen srf02.py - TWI-Ultraschall-Entfernungsmesser SRF02 auslesen pcf8574.py - TWI-Portexpander PCF8574 Pins setzen
-
PDF
70667.pdf
(D-S) MOSFET FEATURES PRODUCT SUMMARY V (V) R (Ω) I (A) • Halogen-free According to IEC 61249-2-21 DS DS(on) D Definition 0.025 at GS = 10 V ± 6.9 ® 30 TrenchFET Power MOSFETs 0.035 at VGS = 4.5 V ± 5.8 100 % R Tegted Compliant to RoHS Directive 2002/95/EC D D SO-8 1 2 S1 1 8 D 1 G1 2 7 D 1 S D 2 3 6
in „Li-Ion-Anschlussbezeichnungen“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
MBI5040_Datasheet_V1.00-English.pdf
µA IOUT=25.8mA V =1.0V Rext60Ω - ±1.5 ±3.0 % Current Skew (Channel) dIOUT DS IOUT=45mA Rext310Ω - ±1.5 ±3.0 % V DS.0V IOUT=25.8mA V =1.0V Rext60Ω - ±3.0 ±6.0 % Current Skew (IC) dIOUT2 DS IOUT45mA Rext10Ω - ±3.0 ±6.0 % V DS.0V Output Current vs. VDS within 1.0V and 3.0V, Output
in „TLC5940 (PWM driver) | Kauftip!“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
pl2303.pdf
Release Date: July, 2002 ds_pl2303_v14 Revision History Revision Description Date 1.4 • Add Windows CE .NET support feature August 29, 2002 1.3 • Buffer for upstream and downstream data flow – August 01, 2002 change from 96 to
in „USB - seriell Adapter für 1,- EUR!“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
162828-da-01-en-IRLML_2803TR.pdf
On-Resistance Ω GS D 0.40 VGS = 4.5V,DI = 0.46A V Gate Threshold Voltage 1.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 0.87 S VDS = 10V, D = 0.46A 1.0 V = 24V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS 25 VDS = 24V, GS = 0V, J = 125°C Gate-to-Source Forward Leakage -100 V =
in „PWM RGB-Led Beleuchtung“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
infineon-irf1010e-mosfet.pdf
l Ultra Low On-Resistance V DSS = 60V l Dynamic dv/dt Rating l 175°C Operating Temperature R = 12m DS(on) l Fast Switching G l Fully Avalanche Rated ID= 84A S Description ® AdvancedHEXFET PowerMOSFETsfromInternational Rectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea
in „DC Wandler wiederbeleben“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
LTM190E4-L02.pdf
Symbol Min. Typ. Max. Unit Note Voltage of Power Supply V DD 4.5 5.0 5.5 V (1) Interface type LVDS DS90C383/385/387 DS90C386 Pair Current of (a) Black - 700 - mA Power (b) White I - 800 - mA (2),(3) DD Supply (c) 2 Line Stripe - 800 1050 mA Vsync Frequency fV 49 60 76 Hz Hsync Frequency fH 51 64 85 kHz
in „Ansteuerung LC Display LTM190E4-L03“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
lm35_Temp.pdf
Characteristics 5 Thermal Resistance Thermal Time Constant Thermal Response Junction to Air in Still Air DS005516-26 DS005516-25 DS005516-27 Thermal Response in Minimum Supply Quiescent Current Stirred Oil Bath Voltage vs. Temperature vs. Temperature (In Circuit of Figure 1.) DS005516-28 DS005516-29 DS005516
in „Temperatursensor LM35 DZ will nicht funktionieren“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
MPVD7N65.pdf
(Min.) DSS PIN Connection Low gate charge: Q =g0nC (Typ.) D Low drain-source On resistance: R DS(on)1.35 Ω (Max.) D 100% avalanche tested RoHS compliant device G Ordering Information G ORDER CODE MARKING PACKING S S MPVD7N65 MPVD7N65 TO-252 TO-252 Absolute maximum ratings (TC=25C unless otherwise
in „Unbekannte Bauelemente“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
BUZ11.pdf
BUZ11 ∪ N - CHANNEL 50V - 0.03 - 33A TO-220 STripFET∧ MOSFET TYPE VDSS R DS(on) ID BUZ11 50 V < 0.04 33 A TYPICAL R DS(on)= 0.03 AVALANCHERUGGED TECHNOLOGY 100%AVALANCHE TESTED HIGH CURRENT CAPABILITY 175 C OPERATINGTEMPERATURE 23 1 APPLICATIONS TO-220 HIGH CURRENT, HIGH SPEED
in „Transistorschalter für Glühlampe 12V 5W“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
DS_SX1261-2_V1.1-1307803.pdf
kbps to 300 kbps. All parameters are set by using the command SetModulationParams(...). This function should be called only after defining the protocol. Thebitratesettingisreferencedtothecrystaloscillatorandprovidesaprecisemeansofsettingthebitrate
-
PDF
innoswitch3-ep_family_datasheet.pdf
the of the InnoSwitch3-EP IC (no additional resistors should be connected SECONDARY GROUND pin. A 300 pF (or smaller) decoupling in the gate circuit of the SR FET). The SR FET is turned off once the capacitor should be connected at the FEEDBACK pin to the V of the SR FET reaches 0 V. DS SECONDARY GROUND
in „Fritz Repeater 2400“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
Datenblatt_PIC12F1822.pdf
the message. SDA is held valid after the falling edge of SCL. Setting the SDAHT bit selects a longer 300 ns minimum hold time and may help on buses with large capacitance. DS41413B-page 244 Preliminary 2010 Microchip Technology Inc. PIC12F/LF1822/PIC16F/LF1823 2 TABLE 25-2: I C BUS TERMS 25.4.5 START
in „PIC12F1822-PWM Mode“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
Datenblatt_PIC12F1822.pdf
the message. SDA is held valid after the falling edge of SCL. Setting the SDAHT bit selects a longer 300 ns minimum hold time and may help on buses with large capacitance. DS41413B-page 244 Preliminary 2010 Microchip Technology Inc. PIC12F/LF1822/PIC16F/LF1823 2 TABLE 25-2: I C BUS TERMS 25.4.5 START
in „Interrupt-PIC12F1822“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
12F1822_1823.pdf
the message. SDA is held valid after the falling edge of SCL. Setting the SDAHT bit selects a longer 300 ns minimum hold time and may help on buses with large capacitance. DS41413B-page 244 Preliminary 2010 Microchip Technology Inc. PIC12F/LF1822/PIC16F/LF1823 2 TABLE 25-2: I C BUS TERMS 25.4.5 START
in „Auflösung PWM-Mode“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
12F1822_1823.pdf
the message. SDA is held valid after the falling edge of SCL. Setting the SDAHT bit selects a longer 300 ns minimum hold time and may help on buses with large capacitance. DS41413B-page 244 Preliminary 2010 Microchip Technology Inc. PIC12F/LF1822/PIC16F/LF1823 2 TABLE 25-2: I C BUS TERMS 25.4.5 START
in „8Bits und 2Bits in eine Integer-Variable“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
12F1822_1823.pdf
the message. SDA is held valid after the falling edge of SCL. Setting the SDAHT bit selects a longer 300 ns minimum hold time and may help on buses with large capacitance. DS41413B-page 244 Preliminary 2010 Microchip Technology Inc. PIC12F/LF1822/PIC16F/LF1823 2 TABLE 25-2: I C BUS TERMS 25.4.5 START
in „Timer2 auf 10bit einstellen“ · Mikrocontroller und Digitale Elektronik ·