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PDF
catalog.pdf
Gauge, 18.8 mV/kPa, 0 kPa, 250 Page 57/87 Bauteileliste vom 12.08.2022 kPa, 4.85 V, 5.35 V RAM MPN: DS1245Y-70+ [ID]: 000304 [Price]: 32.23 USD [QTY]: 2 [Category]: RAM [Desc]: DS1245 Series 1024 kb (128 k x 8) 70ns Commercial Temp Non-Volatile SRAM DIP-32 MPN: DS1230Y-70+ [ID]: 000305 [Price]: 22.7 USD
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PDF
catalog.pdf
[Desc]: Real Time Clock Parallel 16byte Clock/Calendar/Alarm/Timer/Interrupt 28-Pin PDIP Tube MPN: DS1307ZN+ [ID]: 000432 [Price]: 3.26 USD [QTY]: 5 [Category]: Real Time Clocks [Desc]: DS1307 Series 5.5 V I2C/Serial Surface Mount Real Time Clock - SOIC-8 MPN: DS1307Z+ [ID]: 000568 [Price]: 2.92 USD
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PDF
catalog-3.pdf
[Desc]: Real Time Clock Parallel 16byte Clock/Calendar/Alarm/Timer/Interrupt 28-Pin PDIP Tube MPN: DS1307ZN+ [ID]: 000432 [Price]: 4.4923 USD [QTY]: 5 [Category]: Real Time Clocks [Desc]: DS1307 Series 5.5 V I2C/Serial Surface Mount Real Time Clock - SOIC-8 MPN: DS1307Z+ [ID]: 000568 [Price]: 4.0238
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Datei
G32trust.asm
7D0h ; nIDDlgItem push esi ; hDlg call ds:SetDlgItemTextA push 1 ; nIDDlgItem push esi ; hDlg call ds:GetDlgItem push eax ; hWnd call ds:SetFocus pop edi mov eax, 1 pop esi add esp, 300h retn 10h DialogFunc endp ; Exported entry 20. gt_IsForReSale
in „Wer kann mir eine ASM File compelieren“ · Softwareentwicklung ·
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Datei
nrf24l01.c
include "rf_defines.h" #define RF_CONFIG_MASK ((0 << NRF24L01_MASK_RX_DR) | (1 << NRF24L01_MASK_TX_DS) | (1 << NRF24L01_MASK_MAX_RT) \ | (1 << NRF24L01_EN_CRC) | (1 << NRF24L01_CRCO)) #define PAYLOAD_SIZE 32 // Hängt von Groesse des Structs ab #define RF_CHANNEL 75 // Kanal 75 für uns /* ------------
in „NRF24L01+ auf STM32F103: Ich weiss nicht mehr weiter :-(“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Therm.txt
1 ...poke to PSW to use DSEG ; This is internal data memory ORG 20H ; Bit adressable memory SENP: DS 1 SENP1 BIT SENP.0 MINUS BIT SENP.1 MIN1 BIT SENP.2 COUNT: DS 1 SPEED: DS 1 VALUE_1: DS 1 VALUE_2: DS 1 VALUE_3: DS 1 TEMP1: DS 1 TEMP1D: DS 1 RAM: DS 9 TEP1: DS 1 TEP2: DS 1 STACK: DS 1 ; Stack begins
in „Programm(A51) DS1820 auf DS18b20 Umstellen“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Therm.txt
1 ...poke to PSW to use DSEG ; This is internal data memory ORG 20H ; Bit adressable memory SENP: DS 1 SENP1 BIT SENP.0 MINUS BIT SENP.1 MIN1 BIT SENP.2 COUNT: DS 1 SPEED: DS 1 VALUE_1: DS 1 VALUE_2: DS 1 VALUE_3: DS 1 TEMP1: DS 1 TEMP1D: DS 1 RAM: DS 9 TEP1: DS 1 TEP2: DS 1 STACK: DS 1 ; Stack begins
in „Programm(A51) DS1820 auf DS18b20 Umstellen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PIC18F46J11_39932D.pdf
Delays) POR, BOR, RESET Instruction, Stack Full, Stack Underflow, MCLRT (PWRT, OST) Instruction Set 75 Instructions, 83 with Extended Instruction Set Enabled Packages 44-Pin QFN and TQFP 2011 Microchip Technology Inc. DS39932D-page 13 PIC18F46J11 FAMILY FIGURE 1-1: PIC18F2XJ11 (28-PIN) BLOCK DIAGRAM
in „PIC18F46J11 und RTC. Quarz nötig? Anfängerfrage Übersicht verloren ;-(“ · Mikrocontroller und Digitale Elektronik ·
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Bild
Saleae Logic Logikanalysator Software Screenshot
PulseView Starten Analysesitzung 1 Saleae Logic 200 M samples 3 MHz +1:00.006 65 +1:00.006 70 +1:00.006 75 +1:00.006 80 +1:00.006 85 GPS 1PPS DS3231SN 32KHz Timing: Times 900.101 ms (1.111 Hz) 100.011 ms (9.999 Hz) Counter: Edges 60 61 DS3231SN 32KHz rising edge Counter: Edges 1966079 1966080 1966081 1966082 1966083 1966084 1966085 DS3231SN 32KHz falling edge Counter: Edges 1966079 1966080 1966081 1966082 1966083 1966084 1966085
in „Uhrenquarz Genauigkeit messen“ · Mikrocontroller und Digitale Elektronik · · Oszi-Bilder
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PDF
MOSFET_TK6A60W_Toshiba_LIN.pdf
3.7 Drain-source on-resistance RDS(ON) V GS= 10 V,DI = 3.1 A 0.68 0.75 Ω 6.2. Dynamic Characteristics (T = 25 unleas otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Input capacitance Ciss V DS= 300 V, GS = 0 V, f = 1 MHz 390 pF Reverse
in „Push/Pull in spannungsgeregelter Stromquelle / Frage zur Auslegung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MOSFET_TK6A60W_Toshiba_LIN.pdf
3.7 Drain-source on-resistance RDS(ON) V GS= 10 V,DI = 3.1 A 0.68 0.75 Ω 6.2. Dynamic Characteristics (T = 25 unleas otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Input capacitance Ciss V DS= 300 V, GS = 0 V, f = 1 MHz 390 pF Reverse
in „Push/Pull in spannungsgeregelter Stromquelle / Frage zur Auslegung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
16F648a_40044F.pdf
0 15.63 — 0 0.512 — 0 LOW 0.2185 — 255 0.0610 — 255 0.0020 — 255 © 2007 Microchip Technology Inc. DS40044F-page 75 PIC16F627A/628A/648A TABLE 12-5: BAUD RATES FOR ASYNCHRONOUS MODE (BRGH = 1) BAUD FOSC = 20 MHz SPBRG 16 MHz SPBRG 10 MHz SPBRG value value value RATE (K) KBAUD ERROR (decimal) KBAUD ERROR
in „16f627A schaltet RA5 u RA6 nicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Display_Controller.pdf
X 160 SEG MF[2:0] I Manufacturer ID code for reference, suggestion setting [ MF2.MF1.MF0 = 0.0.0 ] DS[1:0] I Display size ID code for reference, suggestion setting [ DS1.DS0 = 1.0 or DS1.DS0 = 0.0] Ver2.3 17/97 2007/1/3 ST7528 MICROPROCESSOR INTERFACE Microprocessor Interface Pin Description Name I/O
in „LCD Controler mit Spannungsregulier-Eingängen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
FCPF11N60B.pdf
nA I Gate-Body Leakage Current, Reverse V = -30 V, V = 0 V -- -- -100 nA GSSR GS DS On Characteristics VGS(th) Gate Threshold Voltage V DS = VGS, D = 250 µA 3.0 -- 5.0 V R Static Drain-Source DS(on) V GS = 10 V,DI = 5.5 A -- 0.32 0.38 Ω On-Resistance gFS Forward Transconductance V DS
in „Kühlkörper Dimensionieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TMC4671-LA_datasheet.pdf
configuration) 7 3*VDD/4 75% ADC reference voltage (redundant configuration) Table 9: Delta Sigma (▯▯) ADC Input Stage Configurations The three bit vector ADC_STAGES_CFG(n+2:n) is part of the DS_ANALOG_INPUT_STAGE_CFG(31:0) with
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PDF
A100_IRF7413_IR.pdf
Vs. Temperature www.irf.com 3 IRF7413PbF 3200 20 VGS = 0V, f = 1MHz ID = 7.3A Ciss = Cgs + Cgd, C ds SHORTED ▯V = 24V 2800 Crss = Cgd ) DS C▯iss C = C + C ( ▯VDS = 15V oss ds gd g16 ) 2400 t p o ( 2000 C▯oss V c c12 a u c 1600 o a - a - 8 C 1200 t C a C▯rss , 800 S VG4 400 FOR TEST CIRCUIT▯ SEE FIGURE
in „MOSFET - Verständnisfrage“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FQP85N06.pdf
Breakdown Voltage Temperature I = 250 µA, Referenced to 25°C / ∆T Coefficient D -- 0.06 -- V/°C J DSS V DS = 60 V, GS = 0 V -- -- 1 µA Zero Gate Voltage Drain Current V DS = 48 V, C = 150°C -- -- 10 µA GSSF Gate-Body Leakage Current, Forward V GS = 25 V, DS = 0 V -- -- 100 nA GSSR Gate-Body Leakage Current
in „MosFET Vergleichstyp zu FQP 85N06“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sed1335f.pdf
SED1330 Timing Diagrams 4.4.2 System bus READ/WRITE timing II (6800) CYC6 E tAW6 EW R/W tAH6 A0, CS DS6 tDH6 D0~D7 (WRITE) ACC6 OH6 D0~D7 (READ) Figure 33. System bus READ/WRITE timing II (6800) 4.4.2.1 SED1330F Ta = –20 to 75°C Rating Signal Symbol Parameter Unit Condition min max A0, CS tH6 Address
in „SP14Q002-A1 aus eBay - Erfahrungsaustausch“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SED1330.pdf
SED1330 Timing Diagrams 4.4.2 System bus READ/WRITE timing II (6800) CYC6 E tAW6 EW R/W tAH6 A0, CS DS6 tDH6 D0~D7 (WRITE) ACC6 OH6 D0~D7 (READ) Figure 33. System bus READ/WRITE timing II (6800) 4.4.2.1 SED1330F Ta = –20 to 75°C Rating Signal Symbol Parameter Unit Condition min max A0, CS tH6 Address
in „Hilfe ! Problem mit Minigrafikdisplay und AT90S8535“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SED1335F.pdf
SED1330 Timing Diagrams 4.4.2 System bus READ/WRITE timing II (6800) CYC6 E tAW6 EW R/W tAH6 A0, CS DS6 tDH6 D0~D7 (WRITE) ACC6 OH6 D0~D7 (READ) Figure 33. System bus READ/WRITE timing II (6800) 4.4.2.1 SED1330F Ta = –20 to 75°C Rating Signal Symbol Parameter Unit Condition min max A0, CS tH6 Address
in „Hilfe beim Initialisieren des SED1335F gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS1302_DAL.pdf
PART # DESCRIPTION DS1302 Serial Timekeeping Chip; 8–pin DIP – Backuppowersupplypincanbeusedforbattery DS1302S Serial Timekeeping Chip; or super cap input 8–pin SOIC (200 mil) – Additional scratchpad memory (7 bytes) DS1302Z
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PDF
DS1302.pdf
PART # DESCRIPTION DS1302 Serial Timekeeping Chip; 8–pin DIP – Backuppowersupplypincanbeusedforbattery DS1302S Serial Timekeeping Chip; or super cap input 8–pin SOIC (200 mil) – Additional scratchpad memory (7 bytes) DS1302Z
in „DS1302 zu langsam“ · Mikrocontroller und Digitale Elektronik ·
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PDF
lm2731.pdf
Vin = 5V V S 0.25 C 1.226 RD A 0.2 B 1.225 E 0.15 E F 1.224 0.1 1.223 0.05 1.222 0 -40 -25 0 25 50 75 100 125 -40 -25 0 25 50 75 100 125 o o TEMPERATURE ( C) TEMPERATURE ( C) Figure 9. Feedback Voltage vs Temperature Figure 10. R (ON) vs Temperature DS 2.6 350 300 2.5 A 250 ( 2.4 I ) I : 200 L ( N 2.3 O E S 150 R R U C 2.2 100 2.1 50 0 2 -40 -25 0 25 50 75 100 125 2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.5 o TEMPERATURE ( C) VINV) Figure 11. Current Limit vs Temperature Figure 12. R DS(ON) vs V IN 8 Submit Documentation Feedback Copyright © 2004–2015, Texas Instruments
in „[V] 5St. Boost Reg. ADJ TI LM2731XMF 1,6Mhz 1,8A Switch (SOT23-5)“ · Markt ·
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PDF
IRL540N-UMW.pdf
Power MOSFET Description The UMW IRL540N uses advanced trench technology and design to provide excellenDS(ON)ith low gate charge. It can be used in a wide variety of applications. General Features ● V DS = 100V,D =30A RDS(ON)< 28mΩ @ V GS0V (Typ:24 mΩ) Schematic diagram ● Special process technology for high
in „Problem mit Mosfet IRL540 an 52V, öffnet nicht mehr“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
armbian_modules.txt
max1111 f71882fg ina209 sht21 jc42 pcf8591 vt1211 sht15 hwmon-vid ds620 ntc_thermistor adt7462 lm92 ads1015 lm77 ltc2945 lm70 max6639 max31722 w83793 lm75 tc74 pc87427 ina3221 w83795 lm90 lm95241 nct7904 hih6130 lineage-pem sch5627 lm95245 adm9240 mcp3021 f71805f g760a
in „Samba auf Banana Pi Pro installieren“ · PC Hard- und Software ·
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PDF
DS1307.pdf
32.768kHz Crystal Connection V - +3V Battery Input BAT GND - Ground ORDERING INFORMATION SDA - Serial Data DS1307 8-Pin DIP (300-mil) SCL - Serial Clock DS1307Z 8-Pin SOIC (150-mil) SQW/OUT - Square Wave/Output Driver DS1307N 8-Pin DIP (Industrial) DS1307ZN 8-Pin SOIC (Industrial) DESCRIPTION The DS1307 Serial
in „Real-Time Clock (ds1307)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
_DS1990R-DS1990R-F5.pdf
Net any object, including containers, pallets, and bags. The DS1990R is a fully compatible variant of the ♦ Digital Identification by Momentary Contact DS1990A. In applications where a presence pulse on contact is critical, the DS1990R should be preferred ♦ Data
in „1-Wire: iButton: sendet keine Daten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BUK7514-55A.pdf
drain-source on-state resistance. R DS(ON) = f(V GS conditions: I = 25DA; a = R DS(ON) /R DS(ON)25 ˚C f(T)j I D 25 A; V GS = 5 V July 2000 4 Rev 1.000 Philips Semiconductors Product specification TrenchMOS transistor BUK7514-55A Standard
in „Wärmewiderstandsberechnung FET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BUK_7514-55.pdf
drain-source on-state resistance. R DS(ON) = f(V GS conditions: I = 25DA; a = R DS(ON) /R DS(ON)25 ˚C f(T)j I D 25 A; V GS = 5 V July 2000 4 Rev 1.000 Philips Semiconductors Product specification TrenchMOS transistor BUK7514-55A Standard
in „Brauche Hilfe bei Motoransteuerung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRFP450B-1.pdf
Breakdown Voltage Temperature I = 250 µA, Referenced to 25°C / ∆T Coefficient D -- 0.55 -- V/°C J DSS V DS = 500 V, GS = 0 V -- -- 10 µA Zero Gate Voltage Drain Current V DS = 400 V, C = 125°C -- -- 100 µA GSSF Gate-Body Leakage Current, Forward V GS = 30 V, DS = 0 V -- -- 100 nA GSSR Gate-Body Leakage Current
in „Suche IRFP 450B“ · Markt ·
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PDF
Infineon-IPP_B_I80N04S4_04-DS-v01_00-en-1518478.pdf
GS=0V - 0.02 1 µA VDS=18V, V GS=0V, 2) - 1 20 Tj=85°C Gate-source leakage current IGSS VGS =20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) VGS =10V, ID=80A - 4.3 4.6 mΩ V =10V, I =80A, GS D - 3.9 4.2 SMD version Rev. 1.0 page 2 2010-04-06 IPB80N04S4-04 IPI80N04S4-04, IPP80N04S4-04
in „Hilfe bei Halbbrückenschaltung benötigt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FDC638P-D.PDF
Voltage V DS = VGS ID= –250 μA –0.4 –0.8 –1.5 V ΔV GS(th) Gate Threshold Voltage ID= –250 μA,Referenced to 25°C 3 mV/°C ΔT J Temperature Coefficient R Static Drain–Source 39 48 DS(on) V GS = –4.5 V, ID= –4.5 A mΩ
in „richtiger n-Kanal MOSFET, 3,3V soll 5V und 100mA schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ISL6545-Renesas.pdf
regulator is running at high UGATE duty cycles (around t0 t1 t2 FIGURE 3. SOFT-START WITH PRE-BIAS 75% for 600kHz or 87% for 300kHz operation), then the LGATE pulse width may not be wide enough for the OCP to If the V to the upper MOSFET drain is from a different IN properly sample the r DS(ON) . For
in „Synchronwandler ISL6545A wird heiss“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TPIC6C595D_16pin.pdf
L 30 pF, CC(FRQ) Logic supply current at frequency All outputs off, See Figures 2 and 6 1.2 5 mA V DS(on)= 0.5 V, IN= ID, N Nominal current T C 85°C, See Notes 5, 6, and 7 90 mA V DS = 30 V, V CC = 5.5 V 0.1 0.2 I Off-state drain current µA DSX V DS = 30 V, V CC = 5.5 V, 0.15 0.3 T C 125°C I = 50 mA,
in „Seriell ansteuern TPIC6C595, wie geht das ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
on-semiconductor-rfp70n06-mosfet.pdf
N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature r DS(on)= 0.014Ω ® sizes approaching those of LSI circuits, gives optimum Temperature Compensated PSPICE Model utilization of silicon, resulting in outstanding performance. Peak Current vs Pulse Width Curve
in „DC Wandler wiederbeleben“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM35.pdf
Characteristics 5 Thermal Resistance Thermal Time Constant Thermal Response Junction to Air in Still Air DS005516-26 DS005516-25 DS005516-27 Thermal Response in Minimum Supply Quiescent Current Stirred Oil Bath Voltage vs. Temperature vs. Temperature (In Circuit of Figure 1.) DS005516-28 DS005516-29 DS005516
in „ADC schwankungen bei Atmega16“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM35.pdf
Characteristics 5 Thermal Resistance Thermal Time Constant Thermal Response Junction to Air in Still Air DS005516-26 DS005516-25 DS005516-27 Thermal Response in Minimum Supply Quiescent Current Stirred Oil Bath Voltage vs. Temperature vs. Temperature (In Circuit of Figure 1.) DS005516-28 DS005516-29 DS005516
in „Flinker Temperatursensor“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS1302.pdf
Underwriters Laboratory (UL) recognized NC 4 13 NC X2 5 12 I/O NC 6 11 NC ORDERING INFORMATION NC 7 10 NC DS1302 8-Pin DIP (300-mil) GND 8 9 DS1302N 8-Pin DIP (Industrial) RST DS1302 16-Pin SOIC (300-mil) DS1302S 8-Pin SOIC (200-mil) DS1302SN 8-Pin SOIC (Industrial) DS1302Z 8-Pin SOIC (150-mil) DS1302ZN 8-Pin
in „genauer TIMER“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS1302.pdf
Underwriters Laboratory (UL) recognized NC 4 13 NC X2 5 12 I/O NC 6 11 NC ORDERING INFORMATION NC 7 10 NC DS1302 8-Pin DIP (300-mil) GND 8 9 DS1302N 8-Pin DIP (Industrial) RST DS1302 16-Pin SOIC (300-mil) DS1302S 8-Pin SOIC (200-mil) DS1302SN 8-Pin SOIC (Industrial) DS1302Z 8-Pin SOIC (150-mil) DS1302ZN 8-Pin
in „RTC DS 1302“ · Mikrocontroller und Digitale Elektronik ·
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PDF
CY8C4147AZI.pdf
– 25 µs – Usable Deep Sleep Mode 2 is lowest current range. Mode Mode 1 has higher GBW. I – – SID_DS_1 DD_HI_M1 Mode 1, High current 1400 25 °C I – – SID_DS_2 DD_MED_M1 Mode 1, Medium current 700 25 °C SID_DS_3 I Mode 1, Low current – 200 – 25 °C DD_LOW_M1 µA SID_DS_4 IDD_HI_M2 Mode 2, High current
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PDF
AN-9010.PDF
space −14 VDD (8.86 × 10 [F/cm]); CB is epitaxial layer background concentration [atoms / cm ]; DF I V DS is drain−to−source voltage; and O C C fB is diode potencial. RG gd1 d G As shown in the equation above, V DS >>f CBdecdsases VGG Cgs Ǹ as V DS increases with the relationship of C ds1ń V . DS Characteristics
in „SMD Mosfet mit Z-Diode für induktive Last“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Liteon_Water_Clear_3mm_LEDs.pdf
Through Hole Lamp Product Data Sheet LTL1CHKXKNNSERIES Spec No.: DS20-2000-343 Effective Date: 08/22/2000 Revision: - LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C. Tel
in „suche "ulta low current" 3mm LEDs“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Bauteile.pdf
25 44 Mos-Fet IRL2910PBF 100V 55A NKanal 45 SchottkyDiode USD945 45V 16A 22 46 Mos-Fet IRF2805 55V 75A 47mΩ 3 47 74xxxx 74150 Multiplexer,Decoder 8 48 NPNTransistor BDX37 75V 5A NPNTransistor 12 49 Optokoppler HCNW135 SingleOptokoppler 42 50 Optokoppler SFH628A-3 100 51 74xxxx 74168 8BitparallelOutSirelsShiftRegister
in „Elektronik Bauteile Neuwertig , meist Leistungselektronik“ · Markt ·
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PDF
Display_-_NL10276BC30-04D.pdf
1. Measured at the panel surface (including self-heat) 2. No condensation 4 Data Sheet EN0488EJ1V0DS00 NL10276BC30-04D ELECTRICAL CHARACTERISTICS (1) Logic, LCD Driving T a= 25°C Parameters Symbols Min. Typ. Max. Unit Remarks Supply voltage V CC 4.75 5.0 5.25 V – Ripple voltage V RP – – +100 mV for
in „VIA Nano Board LVDS Connector“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Display_-_NL10276BC30-04D.pdf
1. Measured at the panel surface (including self-heat) 2. No condensation 4 Data Sheet EN0488EJ1V0DS00 NL10276BC30-04D ELECTRICAL CHARACTERISTICS (1) Logic, LCD Driving T a= 25°C Parameters Symbols Min. Typ. Max. Unit Remarks Supply voltage V CC 4.75 5.0 5.25 V – Ripple voltage V RP – – +100 mV for
in „günstiges ITX Mainboard mit LVDS Connector“ · Mikrocontroller und Digitale Elektronik ·
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PDF
3454fa.pdf
) EN2 EN1 I LED ( 85 ILED= 1A B C LED 0 0 0 (SHUTDOWN) C 0 1 150mA I 80 EN1 (TORCH) 1 0 850mA I E 75 1 1 1A 1MHz EN2 (FLASH) 70 VC BUCK-BOOST SET1 65 T = 25°C 0.1μF SET2 RISET1 EFFICIENCY =OUT – LED LED IN IN LTC3454 20.5k 60 GND (EXPOSED PAD) RISET2 1% 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 LED: LUMILEDS
in „Gibt es Buck-Converter, die einen regelbaren Konstantstrom liefern?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BSS84_P-Kanal_FET.pdf
Temperature D = –250 µA,Referenced to 25°C mV/°C ∆T J Coefficient –48 IDSS Zero Gate Voltage Drain Current V DS= –50 V, V GS= 0 V –15 µA VDS= –50 V,V GS = 0 V TJ= 125°C –60 µA IGSS Gate–Body Leakage. V GS = ±20 V, V DS= 0 V ±10 nA On Characteristics (Note 2) V GS(th) Gate Threshold Voltage V DS= V GS ID= –1 mA
in „FET-Schaltung für Relais-Steuerung“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
ZndUhr01.asm
,5 ;5 Sekunden add dsl,wl adc dsh,null lds snr,snra ;alte Schussnummer inc snr ;plus 1 mp_4b: rjmp ds_korr1 mp_05: ;+/- 1 h ldi yl,low(3600) ;Intervall ldi yh,high(3600) ;1 Stunde ds_korr: ;Korrektur Zeitstempel Datensatz sbrs tfl,tho ;Taste hoch? ja... rjmp pc+3 ;nein... add dsl,yl ;ja, Intervall adc
in „Probleme mit USART (ATMEGA8535)“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ZndUhr01.asm
,5 ;5 Sekunden add dsl,wl adc dsh,null lds snr,snra ;alte Schussnummer inc snr ;plus 1 mp_4b: rjmp ds_korr1 mp_05: ;+/- 1 h ldi yl,low(3600) ;Intervall ldi yh,high(3600) ;1 Stunde ds_korr: ;Korrektur Zeitstempel Datensatz sbrs tfl,tho ;Taste hoch? ja... rjmp pc+3 ;nein... add dsl,yl ;ja, Intervall adc
in „Display Menü LCD 4x20“ · Mikrocontroller und Digitale Elektronik ·
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PDF
FDW2501NZ.pdf
Temperature I = 250 µA, Referenced to 25°C 14 mV/°C ∆T J Coefficient D DSS Zero Gate Voltage Drain Current V DS= 16 V, V GS= 0 V 1 µA GSSF Gate–Body Leakage, Forward V GS= 12 V, V DS= 0 V 10 µA GSSR Gate–Body Leakage, Reverse V GS= –12 V, V DS= 0 V –10 µA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage
in „N-Fet leitet auch bei 0v Gate-Spannung?“ · Mikrocontroller und Digitale Elektronik ·
