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PDF
TM1637_datasheet.pdf
www.titanmec.com V2.1 Free Datasheet http://www.Datasheet4U.com LED 驱动控制专用电路 TM1637 硬件连接图 电路图中所接数码管为共阳数码管 DS1 DS2 DS3 SG1 a DPY SG1 a DPY SG1 a DPY SG2 a SG2 a SG2 a SG3 b SG3 b SG3 b SG4 c f g b GR1 SG4 c f g b GR2 SG4 c f g b GR3 d d d SG5 e e c SG5 e e c SG5 e e c SG6 f d SG6 f d SG6 f d SG7 g dp SG7 g dp SG7 g dp SG8 dp SG8 dp SG8 dp DS4 DS5 DS6 SG1 a DPY SG1 a DPY SG1 a DPY SG2 b a SG2 b a SG2 b a SG3 c f b SG3 c f b SG3 c f b SG4 d g GR4 SG4 d g GR5 SG4 d g GR6 SG5 e SG5 e SG5 e SG6 e d c SG6 e d c SG6 e d c SG7 f dp SG7 f dp SG7
in „7-Segmentanzeige an Atmega32“ · Mikrocontroller und Digitale Elektronik ·
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AN-4147_Design_Guidelines_for_RCD_Snubber_Flyback__FAI.pdf
) sn 1 2 V sn 2 Llk1 peakV − nV s sn o 150 2 Figure 7. Steady-State Waveforms with 10nF Snubber = =14k Capacitor and 14kΩ Snubber Resistor 1 2 150 2× 150μ × 0.4 × 150 −5 × 67k The voltage stresses on the internal SenseFET are 593V and 524V at the startup and steady state, respectively. These are around
in „Flyback-Wandler Störungen auf Versorgung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Design_Guidelines_for_RCD_Snubber_of_Flyback_Converters-Fairchild_AN4147.pdf
) sn 1 2 V sn 2 Llk1 peakV − nV s sn o 150 2 Figure 7. Steady-State Waveforms with 10nF Snubber = =14k Capacitor and 14kΩ Snubber Resistor 1 2 150 2× 150μ × 0.4 × 150 −5 × 67k The voltage stresses on the internal SenseFET are 593V and 524V at the startup and steady state, respectively. These are around
in „Schaltnetzteil Verständnisfrage“ · Analoge Elektronik und Schaltungstechnik ·
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VRE104c_Thaler.pdf
14-PIN HYBRID INCHES MILLIMETER INCHES MILLIMETER PACKAGE DIM MIN MAX MIN MAX DIM MIN MAX MIN MAX E .480 .500 12.1 12.7 A .120 .155 3.0 4.0 L .195 .215 4.9 5.4 Q .015 .035 0.4 0.9 D .775 .805 19.7 20.4
in „[V] Referenzspannungsquellen VRE Thaler Corp.“ · Markt ·
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LM317.pdf
= 30 mA www.national.com 8 Typical Applications (Continued) 0 to 30V Regulator Power Follower DS009063-13 DS009063-14 Full output current not available at high input-output voltages 5A Constant Voltage/Constant Current Regulator DS009063-15 †Solid tantalum *Lights in constant current mode 9 www.national.com
in „Einfaches regelbares Netzteil mit LM350“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
NDM3000.pdf
DrainCurrent VDS ±20 V, V =GS V All ±1 µA T J55 C ±25 µA IGSS Gate-BodyLeakage,Forward VGS ±20 V, V DS0 V All ±100 nA ON CHARACTERISTICS (Note3) V GateThresholdVoltage V = V , I = -250 µA Q1, Q3, Q5 -1 -1.6 -3 V GS(th) DS GS D T =125 C -0.7 -1.25 -2.2 J V = V , I = 250 µA Q2, Q4, Q6 1 1.7 3 DS GS D T
in „L298 Nachfolger???“ · Mikrocontroller und Digitale Elektronik ·
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upd65.pdf
1 20 KI/O5 KI/O7 2 19 KI/O4 S 0 3 18 KI/O3 S1/LED 4 17 KI/O2 REM 5 16 KI/O1 VDD 6 15 KI/O0 X OUT 7 14 KI3 XIN 8 13 KI2 GND 9 12 KI1 S 2 10 11 KI0 Caution The pin numbers of K Iand K I/Oare in the reverse order of the PD6600A, and 6124A. Data Sheet U14380EJ2V0DS00 2 PD64A, 65 BLOCK DIAGRAM CARRIER 4 PORT
in „Gesucht ... UPD65013 ...“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Infineon-IRFZ44N-DataSheet-v01_01-EN.pdf
––– ––– 17.5 mΩ VGS = 10V,DI = 25A V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 19 ––– ––– S VDS = 25V,DI = 25A ––– ––– 25 V = 55V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS ––– ––– 250 VDS = 44V, GS = 0V, J = 150°C Gate-to-Source Forward
in „Mosfet IRFZ44N 12V schalten“ · Analoge Elektronik und Schaltungstechnik ·
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DS2450_ADU.pdf
The Overdrive Match ROM command can be used with a single or multiple devices on the bus. 13 of 24 DS2450 ROM FUNCTIONS FLOW CHART Figure 9 14 of 24 DS2450 ROM FUNCTIONS FLOW CHART Figure 9 (continued) 15 of 24 DS2450 USAGE EXAMPLE (set-up section) There is a sinCCpowered DS2450 on the 1-Wire bus. Set-up
in „1-Wire Quad ADC“ · Mikrocontroller und Digitale Elektronik ·
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OZ960_O2MICRO.pdf
Reference 16 PGND 6 15 GNDA 2.75V- LCT Burst- OPLAMP ZVS Mode 2.50V Control REF 7 + Phase-Shift 14 DIM Controller RT1 8 Ignition 13 LPWM - 9 PDR_C 12 FB EA PDR_C + 1.25V CMP 10 NDR_D 11 NDR_D Figure 2. Functional Block Diagram OZ960-DS-1.6 Page 3 OZ960 PIN DESCRIPTION Names Pin No. I/O Description
in „Ic´s (unbekannt) für den Tft monitor gesucht“ · Mikrocontroller und Digitale Elektronik ·
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OZ960.pdf
Reference 16 PGND 6 15 GNDA 2.75V- LCT Burst- OPLAMP ZVS Mode 2.50V Control REF 7 + Phase-Shift 14 DIM Controller RT1 8 Ignition 13 LPWM - 9 PDR_C 12 FB EA PDR_C + 1.25V CMP 10 NDR_D 11 NDR_D Figure 2. Functional Block Diagram OZ960-DS-1.6 Page 3 OZ960 PIN DESCRIPTION Names Pin No. I/O Description
in „BenQ FP71Bildschirm fällt nach einiger Zeit aus“ · Mikrocontroller und Digitale Elektronik ·
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OZ960.pdf
Reference 16 PGND 6 15 GNDA 2.75V- LCT Burst- OPLAMP ZVS Mode 2.50V Control REF 7 + Phase-Shift 14 DIM Controller RT1 8 Ignition 13 LPWM - 9 PDR_C 12 FB EA PDR_C + 1.25V CMP 10 NDR_D 11 NDR_D Figure 2. Functional Block Diagram OZ960-DS-1.6 Page 3 OZ960 PIN DESCRIPTION Names Pin No. I/O Description
in „Monitor defekt!“ · Analoge Elektronik und Schaltungstechnik ·
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FDC638P-D.PDF
= –250 μA –20 V ΔBV DSS Breakdown Voltage Temperature Coefficient ID= –250 μA,Referenced to 25°C –14 mV/°C ΔT J IDSS Zero Gate Voltage Drain Current V DS = –16 V, V GS= 0 V –1 μA IGSSF Gate–Body Leakage, Forward V GS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –8 V, V DS= 0 V –100
in „richtiger n-Kanal MOSFET, 3,3V soll 5V und 100mA schalten“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Tastatur.asm
Adressbyte .def C1 =r22; Count1 in BitH ;.def Komma = r22 ;Bit 1 und 0= 00 ohne; 01 1Dezimalstelle; 10 2 DS; 11 3 DS; kopiert aus Steuer .def Steuer = r23 ; Bit2 gesetzt=Minus; ; Bit 1 und 0= 00 ohne; 01 1Dezimalstelle; 10 2 DS; 11 3 DS .def adl = r24 ; Ergebnis vom ADC; sonst für Bild in Adressspeicherung
in „Hausbus für Meß- und Steueraufgaben mit Attiny“ · Haus & Smart Home ·
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AR0130_DS_D.pdf
Timing and FRAME_VALID/ LINE_VALID Signals,” on page 15. PDF:1596224327/Source:6660323313 . AR0130DS -Rev.DPub.3/12EN 14 ©2011AptinaImagingCorporation.Allrightsreserved. AptinaConfidentialandProprietary AR0130: 1/3-InchCMOSDigitalImageSensor OutputDataFormat FrameTime The pixel clock (PIXCLK) represents
in „Auswahl des richtigen dsp“ · Digitale Signalverarbeitung / DSP / Machine Learning ·
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Datei
ds1820.c
0xaa, 0x48, 0x16, 0xe9, 0xb7, 0x55, 0x0b, 0x88, 0xd6, 0x34, 0x6a, 0x2b, 0x75, 0x97, 0xc9, 0x4a, 0x14, 0xf6, 0xa8, 0x74, 0x2a, 0xc8, 0x96, 0x15, 0x4b, 0xa9, 0xf7, 0xb6, 0xe8, 0x0a, 0x54, 0xd7, 0x89, 0x6b, 0x35, }; void ds1820_init(void) { DS1820_PORT_DDR &= ~(1<<DS1820_BIT_1WR); /* 1-Wire auf Eingang */ return; } char ds1820_measure(ds1820_scratchpad *sp) { char rc; rc = ds1820_reset_pulse(); if (rc == DS1820_ERR_OK) { ds1820_skip_rom(); ds1820_convert_t(); rc = ds1820_reset_pulse(); if (rc == DS1820_ERR_OK) { ds1820
in „DS18S20 in C“ · Mikrocontroller und Digitale Elektronik ·
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Si9435BDY.PDF
Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES D TrenchFETr Power MOSFET V DS (V) rDS(on) (W) D (A) 0.042 @ VGS = −10 V −5.7 −30 0.055 @ VGS= −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 S SO-8 S D 1 8 G S D 2 7 S D 3 6 G 4 5 D Top View D Ordering Information: Si9435BDY Si9435BDY-T1 (with
in „AVR Ausgang an FET, galvanisch getrennt, so ok?“ · Analoge Elektronik und Schaltungstechnik ·
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RealSimGear_AVR256.pdf
.1 04 ?? 04h code:00130e 52 65 61 ds "RealSimGear−G1000XFD" 6c 53 69 6d 47 65 code:001318.1 45 4e 43 ds "ENC_ALT_OUTER_UP" 5f 41 4c 54 5f 4f code:001321 45 4e 43 ds "ENC_ALT_OUTER_DN" 5f 41 4c 54 5f 4f code:001329.1 45 4e 43 ds "ENC_ALT_INNER_UP
in „ATmega2560 hex File disassemblieren“ · Mikrocontroller und Digitale Elektronik ·
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BF1009SW_2001_INF.pdf
2 = S 3 = G1 4 = G2 SOT343 Maximum Ratings Parameter Symbol Value Unit Drain-source voltage V 12 V DS Continuos drain current ID 25 mA Gate 1/gate 2 peak source current ±IG1/2SM 10 Gate 1 (external biasing) +V 3 V G1SE Total power dissipationS 76 °C P tot 200 mW Storage temperature Tstg -55 ... 150 °
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nRF24L01P_Product_Specification_1_0.pdf
No Has ARD elapsed? Put payload in RX TX mode FIFO. Set TX_DS IRQ Retransmit last Yes packet Set TX_DS IRQ and RX_DR IRQ TX Settling No Number of retries = ARC? Yes Note: ShockBurst™ operation is outlined with a dashed square. Figure 10. PTX operations in Enhanced
in „NRF24L01+ erkennen ob gesendet wird“ · Mikrocontroller und Digitale Elektronik ·
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IRF-610-Datasheet.pdf
Zero Gate Voltage Drain Current DSS DS GS µA V DS = 160 V, VGS = 0 V, TJ= 125 °C - - 250 Drain-Source On-State Resistance R DS(on) VGS = 10 V ID= 2.0 A b - - 1.5 Ω Forward Transconductance g fs V DS= 50 V, ID= 2.0 Ab 0.8 - - S Dynamic Input
in „Schaltung für logic level to high voltage“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IPD053N06N_Infineon.pdf
. output characteristics 6 Typ. drain-source on resistance I =f(V ); T =25 °C R =f(I ); T =25 °C D DS j DS(on) D j parameter: V GS parameter: V GS 180 16 10 V 7 V 160 6 V 14 5 V 5.5 V 6 V 140 12 120 ] 10 5.5 V W ] 100 [ [ ) 8 I ( 80 D R 6 7 V 60 5 V 10 V 40 4 2 20 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 20
in „12V mit Logic Mosfet schalten - funktioniert nicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ob2354ap.pdf
VDD Start up VDD=14.5V,Measure 5 20 uA I_VDD_Operation Operation Current VFB=3Ve current into VDD 1.6 PmA UVLO(ON) VDD Under 8.7 9.7 10.[ V Enterge Lockout UVLO(OFF) VDD Under 14.6 15.8 5 17.0 V Exit (Recovery) OVP(ON)
in „Klackerndes Relais im CD-Player - obwohl vom Netz getrennt.“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
lm3150.pdf
2011 National Semiconducto300531oration www.national.com 0 1 3 Connection Diagram M L 30053102 eTSSOP-14 Ordering Information Order Number Package Type NSC Package Drawing Supplied As LM3150MH 94 Units per Anti-Static Tube LM3150MHE eTSSOP-14 MXA14A 250 Units in Tape and Reel LM3150MHX 2500 Units in Tape
in „LM3150 zu geringe Ausgangsspannung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP794xx.pdf
‘0’. Shaded cells are not used by oscillator configuration. 2011-2018 Microchip Technology Inc. DS20005009G-page 14 MCP79400/MCP79401/MCP79402 5.3 Timekeeping 5.3.1 DIGIT CARRY RULES The following list explains which timer values cause a The MCP7940X maintains the current time and date digit carry
in „MCP794xx EUI-64 Node Adresse“ · Mikrocontroller und Digitale Elektronik ·
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PDF
V2Pro_Board_User_Guide_2_2.pdf
associated Virtex-II Pro FPGA pin assignments. Table 7 - User LED LED Designation Virtex-II Pro Pin # DS7 (LED1) V8 DS8 (LED2) W6 DS9 (LED3) U10 DS10 (LED4) V10 2.6 User Push Button Switches The Virtex-II Pro development board provides four user push button switches as described in the following table.
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Datei
MultiDS18S20_0.2.bas
As Byte , Id(8) As Byte 'Dallas ID 64 bits incl CRC (8 Byte) für 10 Sensoren 'When used like this : DsId(1) = 1wread(8) 'DsId(1) = family code 'Ds1820 10h, DS18B20 28h, Ds18s20 10h 'DsId(2) '48 Bits Serial, LSB 'DsId(3) 'DsId(4) 'DsId(5) 'DsId(6) 'DsId(7) '48 Bits Serial, MSB 'DsId(8) '8 CRC Dim Sc(9)
in „Was brauche ich von der Seriennummer DS18B20?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ISL6545-Renesas.pdf
Gain-Bandwidth Product GBWP 20 MHz Slew Rate SR 9 V/µs GATE DRIVERS Upper Gate Source Impedance RUG-SRCh VCC = 14.5V; I = 50mA 3.0 Upper Gate Sink Impedance RUG-SNKh VCC = 14.5V; I = 50mA 2.7 Lower Gate Source Impedance R V = 14.5V; I = 50mA 2.4 LG-SRCh CC Lower Gate Sink Impedance RLG-SNKh VCC = 14.5V; I
in „Synchronwandler ISL6545A wird heiss“ · Analoge Elektronik und Schaltungstechnik ·
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SMK0825F.pdf
PIN Connection • High Voltage : BV DSS=250V(Min.) D • Low C rss C rsspF(Typ.) • Low gate charge : Qg=14.5nC(Typ.) • Low R DS(on) RDS(on)0.43Ω(Max.) G Ordering Information G Type No. Marking Package Code D S S SMK0825F SMK0825 TO-220F-3L TO-220F-3L Marking Diagram Column 1 : Manufacturer Column 2 : Production
in „Mosfet defekt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PIC_18F8722_Data_Sheet.pdf
TMR1ON 58 Legend: Shaded cells are not used by the Timer1 module. © 2008 Microchip Technology Inc. DS39646C-page 169 PIC18F8722 FAMILY NOTES: DS39646C-page 170 © 2008 Microchip Technology Inc. PIC18F8722 FAMILY 14.0 TIMER2 MODULE 14.1 Timer2 Operation In normal operation, TMR2 is incremented from 00h
in „PIC 18F6527 mit 32MHz Takten“ · Mikrocontroller und Digitale Elektronik ·
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Datei
TempDisplay.c
tempmsb; DDRD &=~ DQ; _delay_ms(5); resetSensor(); writeChar(0xCC); // Skip ROM (works only with one DS18S20) writeChar(0x44); // Begin Temperatur-Conversation while(!readSensor()) { } _delay_ms(1); resetSensor(); writeChar(0xCC); // Skip ROM (works only with one DS18S20) writeChar(0xBE); // Begin Temperatur-Conversation
in „Temperaturauswertung 1-WIRE AVR“ · Mikrocontroller und Digitale Elektronik ·
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PDF
433MHz__odul_antenne_0900766b802fb241.pdf
. GND 5 14 Tx 2 NC 6 13 NC NC 7 12 Rx NC 8 11 NC GND 9 RXD1 FM Transceiver 10 GND 30.48 7 Pin Descriptions RF GND (pins 1,3) Tx (pin 14) For best results, these pins should be connected Data input to the transmitter
in „Funkempfänger/sender gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PIC18f6622.pdf
Legend: Shaded cells are not used by the Timer1 module. 2004 Microchip Technology Inc. Preliminary DS39646B-page 169 PIC18F8722 FAMILY NOTES: DS39646B-page 170 Preliminary 2004 Microchip Technology Inc. PIC18F8722 FAMILY 14.0 TIMER2 MODULE 14.1 Timer2 Operation In normal operation, TMR2 is incremented
in „PIC 18F6622 Zeit um EEPROM zu schreiben“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ccpneu.h
| 2002-27-11 1.37.02 Ds - delete the query of extended id | 2003-05-28 1.37.02 Bus - added V_MEMROM0 | 2003-08-11 1.37.03 Tri - implemented P_MEM_ROM and P_MEM_RAM to support M16C Mitsubishi. | 2003-10-14 1.38.00 Tri - version skipped due to special version for TMS320 | 2003-10-14 1.39.00 Tri - version skipped due to special version for TMS320 | 2003-10-14 1.40.00 Tri - merge of versions: 1.37.03, 1.37.02 | 2003-10-16 1.41.00 Ds - minor bugfix set ROM to CCP_ROM | 2003-10-16 1.41.01
in „XC16 Compiler Error“ · Mikrocontroller und Digitale Elektronik ·
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Datei
main.asm
************************************** Funktion: ATtiny13a (4.8MHz) empfängt ROM und ROM Daten von DS18B20 oder DS18S20 im 5 Sekunden-Takt. Die Daten werden umgerechnet und per I2C über PCF8574 zum LCD1602/2004 übertraben. Line1: Anzeige DS18B20 oder DS18S20 (und im Fehlerfall der Code angezeigt). Line2
in „AVR ATtiny13 DS18B20/DS18S20 I2C PCF8574 LCD Temperaturanzeige“ · Projekte & Code ·
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PDF
IRF7416_datasheet.pdf
1.0 ––– ––– V VDS = VGS, D = -250µA g Forward Transconductance 5.6 ––– ––– S V = -10V, I = -2.8A fs DS D ––– ––– -1.0 VDS = -24V, GS = 0V IDSS Drain-to-Source Leakage Current ––– ––– -25 µA V = -24V, V = 0V, T = 125°C DS GS J Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V IGSS Gate-to-Source Reverse
in „Datenblatt / Prinzip richtig verstanden?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLIZ44N_IR.pdf
Breakdown Voltage Temp. Coefficient 0.070 V/°C Reference to 25°C,DI = 1mA 0.022 VGS = 10V, D = 17A R DS(on) Static Drain-to-Source On-Resistanc 0.025 Ω VGS = 5.0V,DI = 17A 0.035 VGS = 4.0V,DI = 14A V GS(th) Gate Threshold Voltage 1.0 2.0 V VDS = VGS,DI = 250µA gfs Forward Transconductance 21 S VDS = 25V
in „Toggle Schaltung mit NE555 schaltet ein, aber nicht aus“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
SD211SeriesDSRevA10.pdf
1.5 V VGS5V 58 70 70 70 (SDSeries) VGS5V (SSTSeries) 60 75 75 75 VGS10V 38 45 45 45 Drain – Source rDS(on) V SBV (SDSeries) Ω On-Resistance D =1mA VGS10V (SSTSeries) 40 50 50 50 VGS15V 30 VGS20V 26 VGS25V 24 Doc 20114 09/14/2022 Rev# A11 ECN# SD-SST211/13/15 www.linearsystems.com Page 2 of 4 SD-SST211
in „Schaltung mit 2 N-Kanal Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
pnFET_Si1551.pdf
Conditions Min. Typ. Max. Unit Static V = V , I = 250 µA N-Ch 0.6 1.5 Gate Threshold Voltage VGS(th) DS GS D V VDS = VGS, D = - 250 µA P-Ch - 0.6 - 1.5 N-Ch ± 100 Gate-Body Leakage IGSS V DS= 0 V, GS = ± 12 V P-Ch ± 100 nA V DS= 20 V, GS = 0 V N-Ch 1 VDS = - 20 V,GS= 0 V P-Ch - 1 Zero Gate Voltage Drain
in „Kann diese Schaltung den 74HC132 killen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
pnFET_Si1551.pdf
Conditions Min. Typ. Max. Unit Static V = V , I = 250 µA N-Ch 0.6 1.5 Gate Threshold Voltage VGS(th) DS GS D V VDS = VGS, D = - 250 µA P-Ch - 0.6 - 1.5 N-Ch ± 100 Gate-Body Leakage IGSS V DS= 0 V, GS = ± 12 V P-Ch ± 100 nA V DS= 20 V, GS = 0 V N-Ch 1 VDS = - 20 V,GS= 0 V P-Ch - 1 Zero Gate Voltage Drain
in „Warum sperrt P-Kannal FET M1 nicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
si1551dl.pdf
Conditions Min. Typ. Max. Unit Static V = V , I = 250 µA N-Ch 0.6 1.5 Gate Threshold Voltage VGS(th) DS GS D V VDS = VGS, D = - 250 µA P-Ch - 0.6 - 1.5 N-Ch ± 100 Gate-Body Leakage IGSS V DS= 0 V, GS = ± 12 V P-Ch ± 100 nA V DS= 20 V, GS = 0 V N-Ch 1 VDS = - 20 V,GS= 0 V P-Ch - 1 Zero Gate Voltage Drain
in „CMOS: NAND bauen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
B1nn.pdf
which can be obtained from Microchip’s web site at www.microchip.com. © 2009 Microchip Technology Inc. DS21711J-page 3 24AA01/24LC01B FIGURE 1-1: BUS TIMING DATA 5 4 2 3 SCL 7 8 9 10 6 SDA IN 14 11 12 SDA OUT FIGURE 1-2: BUS TIMING START/STOP D4 SCL 7 6 10 SDA Start Stop DS21711J-page 4 © 2009 Microchip
in „IPL Lampe Blitzcounter rücksetzten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Display_-_NL10276BC30-04D.pdf
VI* tvh tvs Vsync V I* VCCI× 50% V I* tvrf ∗ V IH, V : Refer to the LVDS transmitter specifications 14 Data Sheet EN0488EJ1V0DS00 NL10276BC30-04D (4) Display Position of Input Data D (0, 0) D (1, 0) D (2, 0) • • • • • • D (1023, 0) D (0, 1) D (1, 1) D (2, 1) • • • • • • D (1023, 1) D (0, 2) D (1, 2) D
in „VIA Nano Board LVDS Connector“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Display_-_NL10276BC30-04D.pdf
VI* tvh tvs Vsync V I* VCCI× 50% V I* tvrf ∗ V IH, V : Refer to the LVDS transmitter specifications 14 Data Sheet EN0488EJ1V0DS00 NL10276BC30-04D (4) Display Position of Input Data D (0, 0) D (1, 0) D (2, 0) • • • • • • D (1023, 0) D (0, 1) D (1, 1) D (2, 1) • • • • • • D (1023, 1) D (0, 2) D (1, 2) D
in „günstiges ITX Mainboard mit LVDS Connector“ · Mikrocontroller und Digitale Elektronik ·
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PDF
D170086D.pdf
and H-ADJ versions, ILOAD = 100 mA, T A= 25˚C Normalized Efficiency Dropout Voltage Output Voltage DS012661-4 DS012661-5 DS012661-3 Line Regulation Load Regulation Output Ripple Voltage DS012661-6 DS012661-7 DS012661-8 Operating Shutdown Switching Frequency Quiescent Current Quiescent Current DS012661
in „LM2528-3.3 & SI4735 & Bluetooth anliegen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LMD18200.pdf
factory. Typical Performance Characteristics V vs Flag Current R (ON) vs Temperature R (ON) vs SAT DS DS Supply Voltage DS010568-16 DS010568-17 DS010568-18 Supply Current vs Supply Current vs Supply Current vs Supply Voltage Frequency (V S = 42V) Temperature (V S = 42V) DS010568-19 DS010568-20 DS010568
in „Halbbrücke für BLDC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Datasheet_MOSFET.pdf
S DYNAMIC CHARACTERISTICS C Input Capacitance 1080 1400 pF iss Coss Output Capacitance VGS = 0 V, DS = 30 V, ƒ = 1 MHz 133 173 pF Crss Reverse Transfer Capacitance 4 5.2 pF RG Series Gate Resistance 5.5 11 Ω Q Gate Charge Total (10 V) 14 18 nC g Qgd Gate Charge Gate-to-Drain 2.3 nC VDS = 30 V,DI = 8
in „DRV8711 Steppermotortreiber - Hohe Geschwindigkeiten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF7314_P-Channel_Dual_20V_5.3A_0.058Ohm.pdf
DI = -2.9A ––– 0.082 0.098 V GS= -2.7V,DI = -1.5A VGS(th) Gate Threshold Voltage -0.70 ––– ––– V V DS= VGS, D = -250µA gfs Forward Transconductance ––– 5.9 ––– S V DS= -10V, D = -1.5A I Drain-to-Source Leakage Current ––– ––– -1.0 µA V DS= -16V, VGS= 0V DSS ––– ––– -25 V DS= -16V, GS = 0V, TJ= 55°C IGSS
in „mit 2,7V schalten“ · Mikrocontroller und Digitale Elektronik ·
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irf7314.pdf
DI = -2.9A ––– 0.082 0.098 V GS= -2.7V,DI = -1.5A VGS(th) Gate Threshold Voltage -0.70 ––– ––– V V DS= VGS, D = -250µA gfs Forward Transconductance ––– 5.9 ––– S V DS= -10V, D = -1.5A I Drain-to-Source Leakage Current ––– ––– -1.0 µA V DS= -16V, VGS= 0V DSS ––– ––– -25 V DS= -16V, GS = 0V, TJ= 55°C IGSS
in „FTDI FT232RL - Probleme mit Platine/Verbinden mit PC“ · Mikrocontroller und Digitale Elektronik ·
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Capacitive_Touch_Sensor_Design_Guide_AN2934.pdf
by a distance of at least twice the sensor pitch. © 2020 Microchip Technology Inc. Application Note DS00002934B-page 14 AN2934 Self-Capacitance Sensors 1.3 Touch Cover Effect A thicker touch cover increases the distance between the user’s fingertip and the sensor electrode. This causes reduced capacitance
in „Wie realisiert man Sensortasten?“ · Analoge Elektronik und Schaltungstechnik ·