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182853-da-01-en-IRLR_8103V.pdf
measured - Q Typical values of(on) measured atV = 4.5V, Q , Qand Q measured at V = 5.0V, I = 15A. DS GS G SW OSS GS F 2 www.irf.com IRLR8103V 1000 VGS 1000 VGS TOP 15V TOP 15V ) 10V ) 7.0V ( 5.5V ( 5.5V n 4.5V n 4.0V e 3.5V e 3.5V u BOTTOM2.7V u BOTTOM2.7V C100 C100 e e u u 2.7V o 2.7V o - - - - i i
in „Drehzahlmesser für Drehbank“ · Mikrocontroller und Digitale Elektronik ·
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RequiresAcrobat6-5.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
in „Power Mosfet Hexfet wie ansteuern ?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRFB3006_IR.pdf
175°C 1 10 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 c D = 170A a V = 10V ) i GS t e e R 2.0 r 100 T = 175°C n C J O ) e c e r u l o S a 1.5 - T = 25°C o r - J - N
in „Motor PWM Steuerung, Mosfet Problem“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM61.pdf
Thermal Resistance Thermal Time Constant Thermal Response in Junction to Air Still Air with Heat Sink DS012897-3 DS012897-4 DS012897-5 Thermal Response Thermal Response in Still in Stirred Oil Bath Quiescent Current with Heat Sink Air without a Heat Sink vs. Temperature DS012897-6 DS012897-8 DS012897-9
in „R8C/13 Software-Verständnisfrage“ · Mikrocontroller und Digitale Elektronik ·
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SI4946CDY.pdf
e 8 a a VDS= 15 V r o 1000 o 1.4 1000 V ( e e 6 e e e c e e l u l l l n l l d o s n d s 1.2 V GS= 4.5 V, 4.6 A s n 2 - 4 V DS= 48 V 1 2 2 s 1 2 - R t 100 n 1.0 100 G O - 2 -) G ( 0.8 V D R 0 10 0.6 10 0 1.1 2.2 3.3 4.4 5.5 -50
in „Frage zu Ic SI4948“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
main.c
interrupt code, stuff for timing millis() ISR (TIMER0_COMPA_vect) { timer0_millis++; if (timer0_millis % 1000 == 0) { shownumber++; if (shownumber > 5) { shownumber = 0; // refresh real time every Xs read_DS1302(); } } if (timer0_millis % 500 == 0) toggle = !(toggle); // dot for a half second int temp = curtime
in „Seminarprojekt Binäruhr, passenden µC gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLR7843C.pdf
°C 0.1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 e I = 30A c D ) t VGS = 10V ( i t e n R r 100 n 1.5 u T J 175°C e ) e r d r o i o - al - t r t TJ= 25°C i o i 10
in „H-Brücke - 30A - MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS100728A_IXTN660N04T4_-1022876.pdf
1600 t r td(on) 160 tf d(off) 360 520 TJ= 150ºC, VGS= 10V RG= 1Ω, V GS= 10V 1400 V =20V 140 V = 20V DS 340 DS 480 t d ( d200 120 o d f o ) n )- 1000 100 N c20 440 N s I = 660A a e ID= 330A a n D o o o a800 80 s 300 400 e - ID= 330A c N ID= 660A c r n - n t600 60 d t d s 280 360 s 400 40 260 320 200 20
in „Suche Power-MosFet für etwa 600A“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sct2080ke.pdf
.15 Typical Capacitance Fig.16 Coss Stored Energy vs. Drain - Source Voltage 10000 40 Ta= 25ºC ] J 1000 Ciss [ 30 ] S p E [ C oss : : y e 100 Crss e 20 n n t E c e p o a 10 S 10 C Ta= 25ºC s f = 1MHz o VGS= 0V C 1 0 0.1 1 10 100 1000 0 200 400 600 800 Drain - Source Voltage :DS[V] Drain - Source Voltage : DS[V] Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics 10000 20 Ta= 25ºC f T a 25ºC ] VDD= 400V V DD= 400V V I= 10A 1000 V GS= 18V S 15 Pulsed s R G= 0Ω G [ Pulsed : : e e td(off) a
in „Verarmungs- oder Anreicherungstyp“ · Analoge Elektronik und Schaltungstechnik ·
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IRLB8748PBF.PDF
IRLB8748PbF 10000 V = 0V, f = 1 MHZ 14.0 GS D = 32A Ciss = Cgs+ Cgd Cds SHORTED V = 24V Crss = Cgd V 12.0 DS C = C + C ( VDS = 15V oss ds gd g F C l 10.0 ( iss V c e n r 8.0 i 1000 o a - 6.0 a Coss - , t C G 4.0 , C G rss V 2.0 100 0.0 1 10 100 0 10 20 30 40 V , Drain-to-Source Voltage (V) Q , Total Gate Charge (nC) DS G Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R (on) DS ) ) t t n 100 TJ= 175°C n 100µsec
in „Funktionsprüfung MOSFET IRL B8748PbF“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
device_list_hilo_all03_v9-12.pdf
*CAT28F002B *CAT28F002T CAT28F010/I CAT28F010V5/I CAT28F020/I CAT28F512/I CAT28F512V5/I <<DALLAS>> DS1213B (2K*8) DS1213B (8K*8) DS1213C (32K*8) DS1213C (8K*8) DS1213D (128K*8) DS1213D (32K*8) DS1213D (512K*8) DS1213D (8K*8) DS1216B (2K*8) DS1216B/C/E (8K*8) DS1216C/D/E (32K*8) DS1216D/F (128K*8) DS1216F (32K*8) DS1216F (8K*8) DS1220Y/AB/AD DS1225AB/AD/D/E/Y DS1230Y/AB DS1235Y/AB DS1243Y DS1244Y DS1245EE DS1245Y/AB DS1248Y DS1286 DS12887 DS1386 (32K*8) DS1386 (8K*8) DS1387 DS1486 DS1630Y/AB DS1642 DS1643 DS1645EE
in „PROM programmieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf540n.pdf
TJ= 25 C TJ= 175 C 1 10.1 1 10 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.5 D = 33A c A a 3.0 t i e e r R 2.5 C n ) e O e r J
in „Mosfet vor negativer Spannung / Wechselspannung schützen“ · Mikrocontroller und Digitale Elektronik ·
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Linear_Power_MOSFETS_Basic_and_Applications.pdf
500 46 0.18 240 TO-264 @ Vds 400V,dI = 0.6A IXTN62N50L 500 62 0.156 SOT-227B @ V = 400V, I = 0.75A ds d IXTB62N50L 500 62 0.156 300 PLUS264 @ Vds 400V,dI = 0.75A IXTH12N100L 1000 12 0.31 200 TO-247 @ Vd= 600V,d= 0.25A IXTX22N100L 1000 24 0.18 240 PLUS247 @ Vds 800V,dI = 0.3A IXTN22N100L 1000 24 0.18 240 SOT-227B @ Vds 800V,dI = 0.3A, IXTK22N100L 1000 24 0.18 240 TO-264 @ Vds 800V,dI = 0.3A IXTN30N100L 1000 30 0.156 300 SOT-227B @ Vds 600V,dI = 0.5A IXTB30N100L 1000 30 0.156 300 PLUS264 @ Vds 600V,dI = 0.5A Based on equation (2), a single power MOSFET
in „Gleichstromlast MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IXIS_24N100Q3.pdf
Conditions Maximum Ratings DS VDSS TJ= 25C to 150C 1000 V Tab V T = 25C to 150C, R = 1M 1000 V DGR J GS V Continuous 30 V GSS PLUS247 VGSM Transient 40 V (IXFX) ID25 TC= 25C 24 A IDM TC= 25C, Pulse Width Limited by TJM 60
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLU2905.pdf
175°C 1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.0 60 ) Α TJ= 25°C ( 50 T J 175°C ( e n n r t u100.0 T J 175°C u 40 C n r c u s 30 TJ= 25°C S r t T n 10.0 r a a 20
in „Batterieschutzschaltung. Murks oder möglich?“ · Analoge Elektronik und Schaltungstechnik ·
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lg_flatron_l1800p_lb886f_ch_cl-29.pdf
220PF160850V5%R/TPNP0 D732 0DS226009AA KDS226 TPKECSOT-2380V30 C707 0CH8106J691 10UF35VM105STD(CYL)R/TP D733 0DS226009AA KDS226 TPKECSOT-2380V30 C710 0CK103CK51A 0.01UF160850V10%R/TPB(Y D734 0DS226009AA KDS226 TPKECSOT-2380V30 C714
in „Überspannung in Mehrparteien-Wohunung. Baustrom, oder Kabel angebohrt?“ · Haus & Smart Home ·
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PDF
ixys_21N100Q.pdf
TM HiPerFET IXFK 21N100Q V = 1000 V DSS Power MOSFETs IXFX 21N100Q ID25 = 21 A R = 0.50 Ω Q-CLASS DS(on) t ≤ 250 ns Single MOSFET Die rr N-ChannelEnhancementMode TM AvalancheRated,LowQg, PLUS247 (IXFX) HighdV/dt,Lowt rr G (TAB) Symbol
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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ZLDO1117.pdf
TO252 Active 2500 16 mm 13” 1.8V ZLDO1117G18TA SOT223 Active 1000 12 mm 7” Active 16 mm 13” ZLDO1117K25TC 2.5V TO252 2500 ZLDO1117G25TA SOT223 Active 1000 12 mm 7” ZLDO1117K33TC TO252 Active 2500 16 mm 13” 3.3V ZLDO1117G33TA SOT223 Active 1000 12 mm 7” ZLDO1117K50TC TO252 Active 2500 16 mm 13” 5.0V ZLDO1117G50TA SOT223 Active 1000 12 mm 7” ZLDO1117QKTC TO252 Active 2500 16 mm 13” ZLDO1117QGTA Adjustable SOT223 Active 1000 12 mm 7” ZLDO1117QK12TC TO252 Active 2500 16 mm 13” 1.2V ZLDO1117QG12TA SOT223 Active 1000 12 mm 7” Active
in „Def. Mikrocontroller auf Geschirrspüler-Platine?“ · Haus & Smart Home ·
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IRLZ34.pdf
Normalized On-Resistance Vs. Temperature IRLZ34N 1400 15 V GS = 0V, f = 1MHz ID = 16A C iss= C gs + Cgd , C ds SHORTED ) 1200 C rss= C gd ( V = 44V e DS C iss C oss= C ds + Cgd g 12 VDS = 28V ) t F 1000 o ( V e e c r 9 a 800 u i o a C oss - p 600 - a e 6 , a C 400 G , C S rss G 3 200 V FOR TEST CIRCUIT SEE FIGURE
in „einzellzellen entladung für nimh akku“ · Mikrocontroller und Digitale Elektronik ·
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irlz34n.pdf
Normalized On-Resistance Vs. Temperature IRLZ34N 1400 15 V GS = 0V, f = 1MHz ID = 16A C iss= C gs + Cgd , C ds SHORTED ) 1200 C rss= C gd ( V = 44V e DS C iss C oss= C ds + Cgd g 12 VDS = 28V ) t F 1000 o ( V e e c r 9 a 800 u i o a C oss - p 600 - a e 6 , a C 400 G , C S rss G 3 200 V FOR TEST CIRCUIT SEE FIGURE
in „IRLZ34N anschliessen ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Infineon-IRFZ44N-DataSheet-v01_01-EN.pdf
f = 1MHz D =25A C iss= Cgs+ Cgd ,Cds SHORTED C = C ) VDS = 44V C rss= Cgd+ C ( VDS = 27V 2000 oss ds gd g 16 VDS = 11V F t ( o e C iss V n 1500 c 12 t u c o p o a 1000 - 8 , t C G Coss , 500 S 4 VG C rss 0 0 1 10 100 0 10 20 30 40 50 60 70 V , Drain-to-Source Voltage (V) Q , Total Gate Charge (nC) DS
in „Mosfet IRFZ44N 12V schalten“ · Analoge Elektronik und Schaltungstechnik ·
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irlb3034pbf-Datasheet.pdf
Characteristics 100000 5.0 VGS = 0V, f = 1 MHZ C iss= Cgs+ Cgd, CdsSHORTED ID= 185A V = 32V C = C ) 4.5 DS rss gd ( VDS = 20V C oss= Cds+ Cgd e 4.0 ) C a p10000 iss l 3.5 ( V c Coss e 3.0 t u c o 2.5 p Crss - a - 2.0 , 1000 t C G 1.5 , G 1.0 V 0.5 100 0.0 1 10 100 0 20 40 60 80 100 120 140 V , Drain-to-Source
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IRLB3034PbF.pdf
Characteristics 100000 5.0 VGS = 0V, f = 1 MHZ C iss= Cgs+ Cgd, CdsSHORTED ID= 185A V = 32V C = C ) 4.5 DS rss gd ( VDS = 20V C oss= Cds+ Cgd e 4.0 ) C a p10000 iss l 3.5 ( V c Coss e 3.0 t u c o 2.5 p Crss - a - 2.0 , 1000 t C G 1.5 , G 1.0 V 0.5 100 0.0 1 10 100 0 20 40 60 80 100 120 140 V , Drain-to-Source
in „Aufwärtsschaltregler bauen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLB3034.pdf
Characteristics 100000 5.0 VGS = 0V, f = 1 MHZ C iss= Cgs+ Cgd, CdsSHORTED ID= 185A V = 32V C = C ) 4.5 DS rss gd ( VDS = 20V C oss= Cds+ Cgd e 4.0 ) C a p10000 iss l 3.5 ( V c Coss e 3.0 t u c o 2.5 p Crss - a - 2.0 , 1000 t C G 1.5 , G 1.0 V 0.5 100 0.0 1 10 100 0 20 40 60 80 100 120 140 V , Drain-to-Source
in „Logic Level Mosfet - Welcher "kann mehr"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sct2080ke-e.pdf
.15 Typical Capacitance Fig.16 Coss Stored Energy vs. Drain - Source Voltage 10000 40 Ta= 25ºC ] J 1000 Ciss [ 30 ] S p E [ C oss : : y e 100 Crss e 20 n n t E c e p o a 10 S 10 C Ta= 25ºC s f = 1MHz o VGS= 0V C 1 0 0.1 1 10 100 1000 0 200 400 600 800 Drain - Source Voltage :DS[V] Drain - Source Voltage : DS[V] Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics 10000 20 Ta= 25ºC f T a 25ºC ] VDD= 400V V DD= 400V V I= 10A 1000 V GS= 18V S 15 Pulsed s R G= 0Ω G [ Pulsed : : e e td(off) a
in „Datenblatt fraglich?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irl2203ns.pdf
T = 25 C TJ= 175 C 1 J 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 I = 100A c D ) n ( s n TJ= 25 C s 2.0 e e u n C TJ= 175 C O ) c e ed1.5 u r zl o100
in „FETs - 5V steuerspannung - selbstleitend selbstsperrend“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF3205S.pdf
Temperature www.irf.com 3 IRF3205S/IRF3205L 6000 V = 0V, f = 1 MHZ 16 I = 62A GS D Ciss= Cgs + Cgd, ds SHORTED V 14 V DS= 44V 5000 Crss = Cgd ( V DS= 27V C = C + C g V DS= 11V ) oss ds gd l 12 F4000 o e Ciss V 10 n r i u c3000 S 8 p o C - 6 ,2000 Coss a C G , 4 1000 G Crss V 2 0 0 1 10 100 0 20 40 60
in „Mosfet Treiber TC4426 + IRF IRF3205S (Ersatz gesucht)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
APT34F100B2_L_D-1593638.pdf
rss 0 10 0 5 10 15 20 25 0 200 400 600 800 1000 I , DRAIN CURRENT (A) V , DRAIN-TO-SOURCE VOLTAGE (V) D DS Figure 5, Gain vs Drain Current Figure 6, Capacitance vs Drain-to-Source Voltage 16 140 D = 18A ) ( 14 A 120 E ( A N T 12 E 100 O VDS= 200V
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
AQ_Rly_Dm_lcd_lan_1_wire_18_11_12.ino
is not a DS18x20 family device."); return; } ds.reset(); ds.select(addr); ds.write(0x44,1); // start conversion, with parasite power on at the end delay(1000); // maybe 750ms is enough, maybe not // we might do a ds.depower() here, but the reset will take care of it. present = ds.reset(); ds.select(addr); ds.write(0xBE); // Read Scratchpad Serial.print(" Data = "); Serial.print(present,HEX); Serial.print(" "); for
in „Aquariumcontroller: hängt sich auf / stürzt ab / friert ein - Hilfe!“ · Mikrocontroller und Digitale Elektronik ·
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sct2750ny-e.pdf
C D n r 20 r w D 0.1 o PW= 100ms P 10 Ta= 25ºC Single Pulse 0 0.01 0 50 100 150 200 0.1 1 10 100 1000 10000 Junction Temperature : Tj[°C] Drain - Source Voltage : DS[V] Fig.3 Typical Transient Thermal Resistance vs. Pulse Width ] 10 / [ t : e n t i e 1 l a r h T n i Ta= 25ºC n Single Pulse r T 0.1 0.0001
in „"Leiterbahn-Sicherung" erstezen - was würdet ihr tun?“ · Analoge Elektronik und Schaltungstechnik ·
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162399-da-01-en-IRF_4905.pdf
Normalized On-Resistance Vs. Temperature IRF4905 7000 20 VGS = 0V, f = 1MHz ID = -38A Ciss = C gs + Cgd , C ds SHORTED ) 6000 Crss = C gd V C = C + C ( VDS = -44V oss ds gd g16 V = -28V ) t DS F 5000 o ( C iss V e e c 4000 r12 a u c C oss o a - p 3000 t C e 8 , a C 2000 G C rss , S 4 V 1000 - FOR TEST CIRCUIT
in „High Side Switch“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF4905_TO220.pdf
Normalized On-Resistance Vs. Temperature IRF4905 7000 20 VGS = 0V, f = 1MHz ID = -38A Ciss = C gs + Cgd , C ds SHORTED ) 6000 Crss = C gd V C = C + C ( VDS = -44V oss ds gd g16 V = -28V ) t DS F 5000 o ( C iss V e e c 4000 r12 a u c C oss o a - p 3000 t C e 8 , a C 2000 G C rss , S 4 V 1000 - FOR TEST CIRCUIT
in „FET Frage (n oder p)“ · Analoge Elektronik und Schaltungstechnik ·
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infineon-irf1010e-mosfet.pdf
Temperature www.irf.com 3 IRF1010E 6000 20 VGS = 0V, f = 1 MHZ D = 50A C = C + C , C SHORTED iss gs gd ds V V DS= 48V 5000 Crss= Cgd ( 16 V DS= 30V C = C + C g V DS= 12V oss ds gd l F4000 Ciss o ( V c c 12 t u c3000 o p Coss o a - 8 ,2000 t C G , S 4 1000 Crss VG FOR TEST CIRCUIT 0 0 SEE FIGURE 13 1 10 100
in „DC Wandler wiederbeleben“ · Analoge Elektronik und Schaltungstechnik ·
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irfiz34n.pdf
1200 20 V GS = 0V, f = 1MHz D = 16A C iss= Cgs + Cgd , Cds SHORTED ▯VDS = 44V C rss= Cgd V ▯V = 28V 1000 Ciss C oss= Cds + Cgd (16 DS g ) l p 800 o e V c Coss c12 a u c 600 o a - a - 8 C t C 400 a C▯rss , S4 200 VG FOR TEST CIRCUIT▯ SEE FIGURE 13 0 A 0 A 1 10 100 0 10 20 30 40 V , Drain-to-Source Voltage (V) Q , Total Gate Charge (nC) DS G Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED A BY R DS(on) t n r A u 100 t 100 C n a r 10µs
in „Mosfet Treiber Baustein“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF4905.pdf
A 1 A 0.1 1 10 100 0.1 1 10 100 -V , Drain-to-Source Voltage (V) -V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 I = -64A c D ) a ( s t s e R 1.5 r TJ= 25°C n u 100 O C T = 175°C e ) c J r e u o l 1.0 o - a - t r - i N i 10
in „Frage zu Push Pull Abwärtswandler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon_IRLB8721_DataSheet_v01_01_EN-3363432.pdf
On-Resistance vs. Temperature www.irf.com 3 IRLB8721PbF 10000 14 V GS = 0V, f = 1 MHZ ID= 25A C iss= gs + gd, dsSHORTED ) C = C ( 12 V DS= 24V rss gd g V = 15V ) C oss= ds + gd t DS F Ciss o 10 ( 1000 V c r 8 a Coss u c S a t 6 a Crss e , 100 a C , 4 S G V 2 0 10 1 10 100 0 4 8 12 16 20 24 28 V , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) DS Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R (on) ) ) DS ( ( n 100 n 100 100μsec e T = 175
in „LED Ansteuerung für Lazertag Projekt“ · Mikrocontroller und Digitale Elektronik ·
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2N3819.pdf
(T = 25_C UNLESS OTHERAISE NOTED) Input Admittance Forward Admittance 100 100 TA= 25_C TA= 25_C V DS= 15 V VDS = 15 V V GS= 0 V VGS = 0 V Common Source Common Source bis 10 10 gis gfs ) ) S S ( ( –bis 1 1 0.1 0.1 100 200 500 1000 100 200 500 1000 f – Frequency (MHz) f – Frequency (MHz) Reverse Admittance Output Admittance 10 T = 25_C 10 T = 25_C A A V DS= 15 V V DS= 15 V b V GS= 0 V –brs V GS= 0 V os Common Source Common Source 1 1 ) ) S S gos ( ( –grs 0.1 0.1 0.01 0.01 100 200 500 1000 100 200 500 1000 f – Frequency (MHz) f – Frequency (MHz) Equivalent
in „2N3819 Rdson Frage DB“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM3490.pdf
Current vs Input Voltage vs Input Voltage DS100071-11 DS100071-12 Line Transient Response Line Transient Response DS100071-3 DS100071-4 Load Transient Response Load Transient Response DS100071-5 DS100071-6 7 www.national.com 0 9 3 Typical Performance
in „kann mir jemand dieses ic identifizieren?“ · Mikrocontroller und Digitale Elektronik ·
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2sk3142.pdf
test 3 2SK3142 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 40 1000 ) ) 300 10 ( A 10 µs h ( 0µ c 30 D100 P s P I W = 1 30 D 10 ms n n CO m s t e per 1 a 20 r 10 ato ho i C Operation in n( ) i n this area is c = D a 3 25 l r limited by DS(on) C) n 10 D 1 n h C 0.3 0.1
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irl2203npbf.pdf
T = 25 C TJ= 175 C 1 J 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 I = 100A c D ) n ( s n TJ= 25 C s 2.0 e e u n C TJ= 175 C O ) c e ed1.5 u r zl o100
in „IRL2203N defekt?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irfh5300pbf.pdf
Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 100000 14 VGS = 0V, f = 1 MHZ Ciss = Cgs+ Cgd C dsSHORTED ID= 50A C = C V 12 V DS = 24V rss gd e V = 15V Coss = Cds+ Cgd g DS F l 10 (10000 V e Ciss e n r 8 i o a - p Coss - 6 C t , 1000 a C Crss , 4 S VG 2 0 100 1 10 100 0 40 80 120 160 V , Drain-to-Source
in „Beschaltung Mosfet für Brushless-Regler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AQ_Rly_Dm_lcd_lan_1_wire_18_11_12.pdf
type_s = 0; break; default: Serial.println("Device is not a DS18x20 family device."); return; } ds.reset(); ds.select(addr); ds.write(0x44,1); // start conversion, with parasite power on at the end delay(1000); // maybe 750ms is enough, maybe not // we might do a ds.depower() here, but the reset will take care of it. present = ds.reset(); ds.select(addr); ds.write(0xBE); // Read Scratchpad Serial.print(" Data = "); Serial.print(present,HEX); Serial.print(" "); for
in „Aquariumcontroller: hängt sich auf / stürzt ab / friert ein - Hilfe!“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRFR2307Z.pdf
°C 0.1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 80 S TJ= 25°C ) ( (t c e100 a 60 r TJ= 175°C c C d e o r s TJ= 175°C o 10 a 40 - T - d i a r TJ= 25°C r , 1 F 20 I
in „MOSFET IRFR2307Z“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irfh4210d_pbf.pdf
Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 1.8 c D = 50A n ) s 1.6 VGS = 10V ( s n 100 R r TJ= 150°C n 1.4 u O C c d c u i u 10 S a1.2 S T = 25°C o r o J - o - a (1.0 a D D 1 , , n ID V = 10V ( 0.8 DS D 60µs PULSE WIDTH R 0.1 0.6 1.5 2.0 2.5
in „Akkubohrschrauber 10,8V von Makita und Metabo“ · Mechanik, Gehäuse, Werkzeug ·
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IRL1004.pdf
WIDTH T J 25 C° TJ= 175 C 0.1 1 0.1 1 10 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 I = 130A ° D TJ= 25 C c ) a ( i 2.0 n100 T = 175 C
in „Mosfet als Schalter 100W“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Masterarbeit.pdf
gute Übereinstimmung mit den Tabelle 7.4: Parameter für die Berechnung von rech PDSK / W 500 750 1000 1250 1500 1750 2000 ϑJX / C 30 40 55 70 90 110 130 R / 71,3 80 92,9 105,9 123,2 140,4 157,7 DS(on) anderen beiden Kennlinien. Einzig das zweite, steilere Segment wird nicht nachgebildet. 40 35 PD1 30
in „False Turn On bei Synchron Buck mit eGaN FETs“ · Analoge Elektronik und Schaltungstechnik ·
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irlz34npbf.pdf
On-Resistance Vs. Temperature IRLZ34NPbF 1400 15 V GS = 0V, f = 1MHz ID = 16A C iss= Cgs + C gd, C ds SHORTED ) 1200 C rss= C gd ( ▯VDS = 44V Ciss C oss= C ds+ C gd e 12 ▯VDS = 28V g F 1000 l ( o e e n 800 r 9 t u c Coss S p 600 o a - 6 , t C G 400 , C▯rss S 3 VG 200 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 4 8 12 16 20 24 28 32 V , Drain-to-Source Voltage (V) Q , Total Gate Charge (nC) DS G Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED A BY R DS(on) t n r ) u 100 ( 100 C n a r 10µs
in „MOSFET defekt (evtl. durch Ohmmeter)?“ · Analoge Elektronik und Schaltungstechnik ·
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TPCA8028-H_datasheet_en_20080122.pdf
0 0 0 1 2 3 4 5 0 2 4 6 8 10 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Y fs⎪ – D R DS (ON) – D ) 1000 Common source 10 ( V DS = 10 V Common source | Pulse test Ta = 25°C f e Pulse test | n 100 t c s Ω n Ta = −55°C r m i - ( m 25 O ) d 10 100 e N r r ( 4.5 f u S n s R r i t 1 r VGS = 10V
in „Ersatz für TPCA8028-H“ · Mikrocontroller und Digitale Elektronik ·
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Datei
main.c
/brightness"); /* Initiate connection to DS1621 */ filehandle = open(I2C_BUS,O_RDWR); // Get a filehandle to the I2C-Bus ioctl(filehandle,I2C_SLAVE,addressofDS1621); // Open connection to DS1621 /* Check for configuration is ok */ write(filehandle
in „Grasshopper DS1621 Temperaturlogger“ · Mikrocontroller und Digitale Elektronik ·
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PDF
FB180SA10P.pdf
TJ= 150 C 0 0.1 1 10 100 1 10 100 V , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) DS Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs. Drain to Source Voltage 1000 20 D = 180 A A T = 150 C V V DS= 80V t J ( V DS= 50V n g 15 V DS= 20V r l u100 o C V r r u T = 25
in „MOSFET wird sehr heiß“ · Analoge Elektronik und Schaltungstechnik ·