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PDF
ips021.pdf
Rise Time, Fall Time and Treset (µs) Figure 19 -Vin clamp and Vds clamp (%) Vs Vs Tj ( C) Tj ( C) www.irf.com 9 IPS021(S) Case Outline 2 NOTES: 2X 01-6024 00 3-Lead TO-220AB IRGB 01-3026 01 (TO-220AB) 01-6022 00 3-Lead D PAK 01-0016 05 (TO-263AB) 10 www.irf.com IPS021(S) Tape & Reel - D PAK (SMD220) 01-3072 00 IR WORLD HEADQUARTERS: 233Data and specifications subject to change without n6/11/20015 www.irf.com 11
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PDF
ips021.pdf
Rise Time, Fall Time and Treset (µs) Figure 19 -Vin clamp and Vds clamp (%) Vs Vs Tj ( C) Tj ( C) www.irf.com 9 IPS021(S) Case Outline 2 NOTES: 2X 01-6024 00 3-Lead TO-220AB IRGB 01-3026 01 (TO-220AB) 01-6022 00 3-Lead D PAK 01-0016 05 (TO-263AB) 10 www.irf.com IPS021(S) Tape & Reel - D PAK (SMD220) 01-3072 00 IR WORLD HEADQUARTERS: 233Data and specifications subject to change without n6/11/20015 www.irf.com 11
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PDF
Schaltplan_1.2.pdf
GND GND GND R13R21 1 - 1 0 GND 7 2 R 1 GND 10k R6 10k D4IC7B 0 1N4148 1 GND R5 10k T1A 0 /10V_EN R28 IRF7103 10k 7 - - - 1k R14R22339N 8 - J J J 14 2 0 0 10k 9 3 + + C 1 T1B D5IC7C - BUS_IN V V J2 IRF7103 1N4148 3 8 1 P 10k 2 7 2 5 VCC 5GND LM339N 7 6 6 6 B 6 3 + 16 I 8 R15R23 10 - J J J B 4 5 T2A 0 13 11 2 3 6 GND IRF7103 VENTILE1 + 10k D6IC7D 2 7 14 15 1 2 1N4148 0 1 8 SER QA 1 3 4 1 11 QB 2 T2B 5 6 0 J1 n BUS_OUT 10 SCK QC 3 IRF7103 7 8 10k - - - - GND 9 0 GND SCL QD 4 10 LM339N 4 - J J J V C 1 12 RCK QF 5 R16R24
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Datei
BE-Suche.html
required, don't need if-else anymore if(f[0].options[0].selected == true){ //url = "http://irplus.irf.com/search/part-search/part-search.2.html"; url = "http://ec.irf.com/v6/en/US/adirect/ir?cmd=catSearchFrame"; //query = "?BUCKET=BEGIN&PARTIAL=%&PART_NAME="; query = "&domSendTo=byID&domProductQueryName="; } else{ url = "http://search.irf.com/cgi-bin/query"; query = "?pg=q&q="; } */ url = "http://ec.irf.com/v6/en/US/adirect/ir?cmd=catSearchFrame"; query = "&domSendTo=byID&domProductQueryName="; var action = url + query + search; //alert
in „high voltage mosfet?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS_IRFB7430.pdf
: http:www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 05/2012 www.irf.com 9
in „MOSFET Steuer vs Hauptkreis“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irl2203ns.pdf
***V GS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET power MOSFETs www.irf.com 7 IRL2203NS/L 2 D Pak Package Outline Dimensions are shown in millimeters (inches) D Pak Part Marking Information THIS IS AN IRF530S WITH PART NUMBER LOT CODE 8024 INTERNATIONAL ASSEMBLED ON WW02
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PDF
IRFP2907.pdf
–– 0.32 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 www.irf.com 1 6/28/05 IRFP2907 Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V,DI
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PDF
IRLR6225PBF_NMOS.pdf
. $ $66(0%/< 6,7( &2'( Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7 IRLR6225PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 16.3 ( .641 ) 15.7 ( .619 ) 15.7 ( .619 ) 12.1 (
in „FET abgeraucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLB8748PBF.PDF
refer to IR website at: http://www.irf.com/package/ 8 www.irf.com IRLB8748PbF TO-220AB Part Marking Information (;$03/( 7+,6 ,6 $1 ,5) /27 &2'( ,17(51$7,21$/ 3$57 180%(5 $66(0%/(' 21 :: 5(&7,),(5 /2*2 ,1 7+( $66(0%/< /,1( & '$7( &2'( <($5
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PDF
data.pdf
clamp and V clamp2 Figure 19 - Turn-on, Turn-off, and treset o Vs Tjunction ( C) Vs Tjunction ( C) www.irf.com 9 IPS0151/IPS0151S Case Outline - TO-220 2 NOTES: 2X IRGB 01-3026 01 Case Outline - D PAK (SMD220) 01-0016 05 10 www.irf.com IPS0151/IPS0151S 2 Tape & Reel - D PAK (SMD220) WORLD HEADQUARTERS: 233
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PDF
IRF4905.pdf
PD-91280D IRF4905 HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating V DSS = -55V l 175°C Operating Temperature l Fast Switching R DS(on) = 0.02Ω G l P-Channel l
in „P Kanal Mosfet schlägt immer wieder mal Durch.“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF830.pdf
∪ IRF830 N - CHANNEL 500V - 1.35 - 4.5A - TO-220 PowerMESH∧ MOSFET TYPE V DSS RDS(on) ID IRF830 500 V < 1.5 4.5 A TYPICAL R DS(on)= 1.35 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERYLOW INTRINSIC
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PDF
irlr3717.pdf
Junction-to-Ambient (PCB Mg t) ––– 50 R JA Junction-to-Ambient ––– 110 θ Notes through are on page 11 www.irf.com 1 1/24/05 IRLR/U3717 Static @ T = 2J°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V V GS= 0V, D = 250µA ∆Β VDSS/∆TJ
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PDF
Infineon-IRLML2502-DataSheet-v01_01-EN.pdf
2010 K 50 X 51 Y 52 Z Note: For the most current drawing please refer to IR website at http://www.irf.com/package 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014 IRLML2502PbF Micro3™ Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080
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PDF
IRLML6401.pdf
2010 K 50 X 51 Y 52 Z Note: For the most current drawing please refer to IR website at http://www.irf.com/package 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014 IRLML6401PbF Micro3™ Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080
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PDF
IRLML2502.pdf
2010 K 50 X 51 Y 52 Z Note: For the most current drawing please refer to IR website at http://www.irf.com/package 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014 IRLML2502PbF Micro3™ Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080
in „Umsetzung eines 5V Output mit ESP32 und AQY Halbleiterrelais“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF7416_datasheet.pdf
PD - 9.1356D IRF7416 ® HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 1 8 A S D l P-Channel Mosfet 2 7 V DSS = -30V S D l Surface Mount 3 6 l Available in Tape & Reel S D 4 l Dynamic dv/dt Rating
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PDF
irf3205.pdf
PD - 9.1279D IRF3205 HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D V = 55V l Dynamic dv/dt Rating DSS l 175°C Operating Temperature l Fast Switching R DS(on) = 0.008 G l Fully Avalanche
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PDF
IRL1004_IR.pdf
–– 0.75 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RqJA Junction-to-Ambient ––– 62 www.irf.com 1 6/17/04 IRL1004PbF Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V V GS= 0V
in „Schon wieder: Verpolungsschutz-MOSFET und LogicLevel-FET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL1004_IR.pdf
–– 0.75 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RqJA Junction-to-Ambient ––– 62 www.irf.com 1 6/17/04 IRL1004PbF Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V V GS= 0V
in „Schon wieder: Verpolungsschutz-MOSFET und LogicLevel-FET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRG4BC20U_INR.pdf
Surface 0.50 °C/W RθJA Junction-to-Ambient, typical socket mount 80 Wt Weight 2.0 (0.07) g (oz) www.irf.com 1 6/22/04 IRG4BC20UPbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltag600 V VGE = 0V
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PDF
IRF7401_IR.pdf
LEAD FOR SOLDERINGTO ASUBSTRATE. 3X 1.27 [.050] 8X 1.78 [.070 SO-8 Part Marking EXAMPLE: THIS IS AN IRF7101 (MOSFET) DATE CODE (YWW) P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR XXXX WW= WEEK INTERNATIONAL F7101 A= ASSEMBLY SITE CODE RECTIFIER LOT CODE LOGO PART NUMBER IRF7401PbF
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PDF
irl2203npbf.pdf
Junction-to-Case 0.85 RθCS Case-to-Sink, Flat, Greased Surface 0.50 °C/W RθJA Junction-to-Ambient 62 www.irf.com 1 01/29/04 IRL2203NPbF Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250µA (BR
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PDF
IOR__IRFR6215.pdf
25 , IAS= -6.6A. (See Figure 12) center of die contact ISD≤-6.6A, di/dt ≤ -620A/µsDD≤ V(BR)DSS Uses IRF6215 data and test conditions TJ ≤ 175°C ** When mounted on 1" square PCB (FR-4 or G-10 Material ) For recommended footprint and soldering techniques refer to application note #AN-994 2 www.irf.com IRFR
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PDF
IRFR2307Z.pdf
40 °C/W R θA Junction-to-Ambiejt ––– 110 HEXFET isaregisteredtrademarkofInternationalRectifier. www.irf.com 1 10/20/04 IRFR/U2307Z Electrical Characteristics @ T = 2J°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS=
in „MOSFET IRFR2307Z“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
messungen_IRF4905.pdf
eliminieren, wurden von jeder Charge 2 Stück vermessen. Ansicht: Meßergebnisse: (F)ragwürdige Prüflinge: IRF4905(F)-1 ID (A) UDS (mV) RDSon (mΩ)) 1,003 44,1 44,0 2,011 89,1 44,3 3,004 133,8 44,5 3,975 177,8 44,7 (*) IRF4905(F)-2 I (A) UDS (mV) RDSon (mΩ)) 1,004 44,4 44,2 2,010 89,2 44,4 3,005 134,1 44,6 3,989
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PDF
646978.pdf
Design Tip DT97-3 for more details). Note 2: When DD<5V, the minimumSS offset is limiteDDto -V 2 www.irf.com IR2213( S ) Dynamic Electrical Characteristics V (V , V , V ) = 15V, C = 1000 pF, T = 25°C and V = COM unless otherwise specified. The dynamic BIAS CC BS DD L A SS electrical characteristics are
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PDF
irlr2905_1_.pdf
Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 12/8/00 IRLR/U2905 Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-SourceBreakdownVoltage 55 ––– ––– V VGS = 0V,DI
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PDF
irf7401.pdf
PD - 9.1244C IRF7401 HEXFET Power MOSFET Q Generation V Technology A Q Ultra Low On-Resistance S 1 8 DA V DSS = 20V Q N-Channel Mosfet S 2 7 D Q Surface Mount S 3 6 D Q Available in Tape & Reel G 4 5 D Q Dynamic dv/
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PDF
irfp2907.pdf
–– 0.32 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 www.irf.com 1 6/28/05 IRFP2907 Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V,DI
in „Sinusendstufe für 300A“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLU2905.pdf
Material ) . For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 12/8/00 IRLR/U2905 Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-SourceBreakdownVoltage 55 ––– ––– V VGS = 0V,DI
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PDF
irl1404.pdf
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W R Junction-to-Ambi(PCB Mounted) ––– 62 θJA www.irf.com 1 06/14/04 IRL1404 Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V,DI
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PDF
IRF4905.pdf
PD - 94816 IRF4905PbF ● Advanced Process Technology HEXFET Power MOSFET ● Ultra Low On-Resistance D ● Dynamic dv/dt Rating V DSS = -55V ● 175°C Operating Temperature ● Fast Switching R DS(on) = 0.02Ω ● P-Channel G
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PDF
irfb3077pbf.pdf
Vgs(th) 1K Qgs1 Qgs2 Qgd Qgodr Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform www.irf.com 7 IRFB3077PbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 PART NUMBER
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PDF
IRLR7843C.pdf
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRLR/U7843CPbF 1000 VGS 1000 VGS TOP 10V TOP 10V 4.5V 4.5V ) 3.7V ) 3.7V ( 3.5V ( 3.5V n 100 3.0V n 3.0V r 2.7V r 100 2.7V u BOTTOM 2.5V u BOTTOM 2.5V C C r r u 10 u S S t t 2.5V n n 10 a 2.5V a
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IRFB3006_IR.pdf
Qgodr Current Sampling Resistors Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform www.irf.com 7 IRFB3006PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 INTERNATIONAL PART NUMBER ASSEMBLED
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PDF
Reference_Design_Dimming_Ballast_Control.pdf
LRES Inductor, 2.0mH, 2.0Apk Coilcraft Z9265B 23 2 MHS,MLS Transistor, MOSFET International Rectifier IRF720 24 1 MPFC Transistor, MOSFET International Rectifier IRF730 25 1 R15 Resistor, 1K Ohm, SMT 1206 Panasonic ERJ-8GEYJ102V 26 1 RFMIN Resistor, 36K Ohm, SMT 1206 Panasonic ERJ-8GEYJ363V 27 1 RDIM Resistor
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PDF
IRL1004.pdf
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE : THIS IS AN IRF1010 A WITH ASSEMBLY LOT CODE 9B1M INTERNATIONAL PART NUMBER RECTIFIER IRF1010 LOGO 9246 9B 1M DATE CODE ASSEMBLY (YYWW) LOT CODE YY = YEAR WW = WEEK WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California
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irlml2502.pdf
150 °C Thermal Resistance Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 75 100 °C/W www.irf.com 1 04/30/03 IRLML2502 Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V V GS= 0V
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PDF
MOSFET-irfiz34v.pdf
duty cycle ≤ 2%. R = 25 , I = 30A. (See Figure 12) Uses IRFZ34V data and test conditions G AS 2 www.irf.com IRFIZ34V 1000 1000 TOP 15V TOP 15V 10V 10V ) 8.0V ) 8.0V ( 6.0V ( 6.0V n 5.5V t 5.5V e BOTTOM 4.5V e BOTTOM 4.5V u100 u100 C C e e u r o o - - - - i i 4.5V r 10 r 10 D D , 4.5V , ID ID 20µs PULSE
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IRFP_3703.pdf
Offline High Power AC/DC Convertors using Synchronous Rectification Notes through are on page 8 www.irf.com 1 5/18/01 IRFP3703 Static @ T = J5°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 ––– ––– V V = 0V, I = 250µA (BR)DSS GS D V(BR)DSSJ
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A100_IRF3415_IF.pdf
PD - 94963 IRF3415PbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175°C Operating Temperature V (kk = 150V l Fast Switching l FullyAvalancheRated R = 0402IΩ (k)on0 l Lead-Free G Description
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IRG4BC30U_IR.pdf
0.50 ––– °C/W RθJA Junction-to-Ambient, typical socket mount ––– 80 Wt Weight 2 (0.07) ––– g (oz) www.irf.com 1 04/22/04 IRG4BC30UPbF Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Volta600 — — V V = 0V, I = 250µA
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IRF-610-Datasheet.pdf
IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated Available RDS(on)(Ω) VGS = 10 V 1.5 RoHS* Qg(Max.) (nC) 8.2 Fast Switching
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IRF540-VIS.PDF
IRF540, SiHF540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available R (Ω) V = 10 V 0.077 Repetitive Avalanche Rated DS(on) GS 175 °C Operating Temperature
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PDF
Schematic.pdf
5 + W W W 2 2 2 3 , 0 , 8 , W R /RF9530NPbF S R /IRF9530NPbF S R /IRF9530NPbF S 2 k T11 k T7 k T3 6 , 4 4 4 R 0 W G W G W G k 5 5 5 1 5 , 2 , 0 , R / R / R / RESET 7 D 7 D 7 D T22 4 T18 4 T14 4 BS170FTA D BS170FTA D BS170FTA D 1 28 PC6 PC5 PD_0 2 27 PD0
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GND DRAIN 26 R40 100n 11 GND DRAIN 15 R41 5 19 GND DRAIN 04 33 + C11 33 GND Q2 Q3 Q4 Q5 Q6 Q7 Q8 Q9 IRF9530 IRF9530 IRF9530 IRF9530 IRF9530 IRF9530 IRF9530 IRF9530 TPIC6B595 D 1 NC NC 20 D N N C16 C17 C18 C19 C20 C21 C22 C23 G 9 G GN 12 Gn RCK RCK 10u 10u 10u 10u 10u 10u 10u 10u SER OUT18 SV7 SRCLRN 8
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DALIHardware.pdf
2.0Coilcraft Z9264-B Inductor, 2.0m H, 2.0Apk Z9265-B 27 1 L3 Coilcraft 28 2 M 1 Transistor M osfet IR IRF730 29 2 M 2 , M 3 Transistor M osfet IR IRF720 30 1 R1 5 Resistor, 1K Oh m , SM T Panasonic ERJ-8GEYJ1KV Resistor, 750 Ohm, SM T 1206 31 1 R3 3 Panasonic 32 1 RFM IN Resistor, 39K Ohm, SM T 1Panasonic
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irlml6401.pdf
,STG Thermal Resistance Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 75 100 °C/W www.irf.com 1 04/29/03 IRLML6401 Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V V GS= 0V
in „CMOS Transistoren“ · Mikrocontroller und Digitale Elektronik ·
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IRLML6401.pdf
,STG Thermal Resistance Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 75 100 °C/W www.irf.com 1 04/29/03 IRLML6401 Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -12 ––– ––– V V GS= 0V
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