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PDF
lt1157.pdf
possible to switch either supply or ground 3 Microamps Standby Current reference loads through a low R DS(ON) N-channel switch 80 Microamps ON Current (N-channel switches are required at 3.3V because P- Drives Low Cost N-Channel Power MOSFETs channel MOSFETs do not have guaranteed R with DS(ON) No External
in „3V Gate-Treiber gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irf9z34n.pdf
Technology D l Dynamic dv/dt Rating V DSS = -55V l 175°C Operating Temperature l Fast Switching R DS(on) = 0.10 l P-Channel G l Fully Avalanche Rated Description S ID = -19A FifthGenerationHEXFETsfromInternationalRectifier utilize advanced processing techniques to achieve extremely low on-resistance
in „IRF9Z34N als Ersatz für BUZ171“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL1004_IR.pdf
BY R A DS(on) t T = 175 C e100 J )000 r ( u t 10us n e a u D 10 C100 100us e i r TJ= 25 C r v D 1ms e ,D , 1 I 10 10ms D IS TC= 25 C TJ= 175 C 0.1 VGS = 0 V Single Pulse 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 1 10 100
in „Schon wieder: Verpolungsschutz-MOSFET und LogicLevel-FET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL1004_IR.pdf
BY R A DS(on) t T = 175 C e100 J )000 r ( u t 10us n e a u D 10 C100 100us e i r TJ= 25 C r v D 1ms e ,D , 1 I 10 10ms D IS TC= 25 C TJ= 175 C 0.1 VGS = 0 V Single Pulse 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 1 10 100
in „Schon wieder: Verpolungsschutz-MOSFET und LogicLevel-FET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sihld24_Mosfet.pdf
PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available R () V = 5.0 V 0.10 For Automatic Insertion DS(on) GS RoHS* Qg(Max.) (nC) 18 End Stackable COMPLIANT Logic-Level Gate Drive Qgs (nC) 4.5 Qgd (nC) 12 R DS(on)Specified at VGS = 4 V and 5 V Configuration Single 175 °C Operating Temperature D Fast Switching
in „Mosfet sperrt nicht“ · Analoge Elektronik und Schaltungstechnik ·
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DS_IRLZ44N-IR.pdf
, Source-to-Drain Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage IRLZ44NPbF 50 RD V DS VGS 40 D.U.T. ) R G ( +V n - DD e 30 u 5.0V C i Duty Factor ≤
in „IRLZ44N Logic Level? Welcher Parameter?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLZ44N-IR_Reichelt.pdf
, Source-to-Drain Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage IRLZ44NPbF 50 RD V DS VGS 40 D.U.T. ) R G ( +V n - DD e 30 u 5.0V C i Duty Factor ≤
in „PWM-Drehzahlregelung Wasserpumpe mit DC bürstenloser Motor“ · Mikrocontroller und Digitale Elektronik ·
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PDF
P-MOSFET_IRF9Z34N.pdf
Technology D l Dynamic dv/dt Rating V DSS = -55V l 175°C Operating Temperature l Fast Switching R DS(on) = 0.10 l P-Channel G l Fully Avalanche Rated Description S ID = -19A FifthGenerationHEXFETsfromInternationalRectifier utilize advanced processing techniques to achieve extremely low on-resistance
in „Pegelwandler 0/5V zu 5V/-9V“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AO3404A.pdf
Transistor General Description Features The AO3404A uses advanced trench technology to V (V) = 30V DS provide excellent DS(ON)and low gate charge. This D = 5.8A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON)< 25m (VGS = 10V) applications. R < 35m (V = 4.5V) DS(ON) GS SOT23
in „unbekante SMD code (Fujitsu Esprimo X913T Motherboard D3204)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irfh4210pbf.pdf
250µA BV DSS/TJ Breakdown Voltage Temp. Coefficient ––– 21 ––– mV/°C Reference to 25°C, I D 1mA R DS(on) Static Drain-to-Source On-Resistance ––– 0.85 1.10 m VGS = 10V, D = 50A ––– 1.10 1.35 VGS = 4.5V,DI = 50A V Gate Threshold Voltage 1.1 1.6 2.1 V V = V , I = 100µA GS(th) DS GS D V GS(th) Gate
in „Akkubohrschrauber 10,8V von Makita und Metabo“ · Mechanik, Gehäuse, Werkzeug ·
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PDF
DS14C232.pdf
C to +85˚C E DS14C232E/J: −55˚C to +125˚C A 2 Connection Diagram Functional Diagram 3 2 D a l D v e / R c e v r DS010744-1 Order Number DS14C232CN, DS14C232CM, or DS14C232TM See NS Package Number N16E, or M16A DS010744
in „Schnittstellentreiber IC DS14C232“ · Mikrocontroller und Digitale Elektronik ·
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PDF
2N7002.pdf
temperature - - -5.5 mV/ C VGS = V DSI D 250µA IGSS Gate body leakage current - - ±100 nA VGS = ±20V, V DS = 0V - - 1.0 VGS = 0V, V DS= Max rating IDSS Zero gate voltage drain current µA V = 0V, V = 0.8Max rating, - - 500 GS O DS TA= 125 C ID(ON) On-state drain current 500 - - mA VGS = 10V, V DS = 25V Static drain-to-source - - 7.5 VGS = 5.0V, ID= 50mA R DS(ON) Ω on-state resistance - - 7.5 V = 10V, I = 500mA GS D ∆R Change in R with temperature - - 1.0 %/ C V = 10V, I = 500mA DS(ON) DS(ON) GS D G Forward transconductance 80 - - mmho V = 25V, I = 500mA
in „MOSFET Beschaltung“ · Analoge Elektronik und Schaltungstechnik ·
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NDP6020P.pdf
ZeroGateVoltage DrainCurrent VDS-16 V,V =0VGS -1 µA T J55°C -10 µA IGSSF Gate-BodyLeakage,Forward VGS 8V, V =0DS 100 nA I Gate-BodyLeakage,Reverse V =-8 V,V =0V -100 nA GSSR GS DS ONCHARACTERISTICS (Note1) V GS(th) GateThresholdVoltage VDSV , GS=-D50 µA -0.4 -0.7 -1 V TJ=125°C -0.3 -0.56 -0.7 R DS(ON) StaticDrain-SourceOn-Resistance
in „P-Channel High-Side Switch 3,3V“ · Mikrocontroller und Digitale Elektronik ·
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PDF
C300_DS_HFD2NEU.pdf
maluska Ihr Partner für Kontakt-Bauelemente elektronik Signalrelais HFD2 • max. Schaltleistung 90W / 125 VA • Spulenspannung 3V bis max. 48VDC • standardmäßig waschfest RT III (IP67) • niedrige Bauhöhe 10.6mm • max. Schaltspannung 220VDC / 250VAC • Ausführung bistabil 1 und 2 Wicklungen • Ansprechleistung ca. 150 mW • Approbationen: ABMESSUNGEN (in mm) MAGNETSYSTEM HFD2 monostabil Spulenwiderstand Leistung Spannungsbereich Abfallspannung Nennspannung Ω mW VDC VDC VDC (UN) min max 45 ± 10 % 200 2.3 6.0 ≥ 0.3 3 125 ± 10 % 200 3.8 10.0 ≥ 0.5 5 r 180 ± 10 % 200 4.5 12.0 ≥ 0.6 6 d 405 ± 10 % 200 6.8 18.0
in „Bistabiles Relais schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MRF272L.pdf
Input Capacitance DS = 28 V, GS = 0, f = 1.0 MHz) Ciss — 135 — pF Output Capacitance (DS = 28 V, GS = 0, f = 1.0 MHz) Coss — 140 — pF Reverse Transfer Capacitance (DS= 28 V, VGS= 0, f = 1.0 MHz) Crss — 17 — pF FUNCTIONAL
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PDF
datasheet.pdf
at a nominal tude. 50%-50% duty cycle, facilitating high data rate operation. In this Data slicer DS2 can overcome this compromise once the signal case, the RF amplifiers are controlled by the PRATE resistor as de - level is high enough to enable its operation. DS2 is a “dB-below- scribed above. peak
in „OPV mit niedriger Eingangskapazität“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM3490.pdf
Current vs Input Voltage vs Input Voltage DS100071-11 DS100071-12 Line Transient Response Line Transient Response DS100071-3 DS100071-4 Load Transient Response Load Transient Response DS100071-5 DS100071-6 7 www.national.com 0 9 3 Typical Performance
in „kann mir jemand dieses ic identifizieren?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NDS355AN.pdf
CHARACTERISTICS (Note 2) V GS(th) Gate Threshold Voltage VDS = VGS ID= 250 µA 1 1.6 2 V TJ=125°C 0.5 1.2 1.5 R DS(ON) Static Drain-Source On-Resistance VGS = 4.5 V, D = 1.7 A 0.105 0.125 Ω TJ=125°C 0.16 0.23 VGS = 10 V, D = 1.9 A 0.065 0.085 ID(ON) On-State Drain Current VGS = 4.5 V, DS = 5 V 6 A gFS Forward Transconductance
in „nds355/nds356“ · Markt ·
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PDF
DS75LX.pdf
Packages Servers PIN CONFIGURATIONS ORDERING INFORMATION PART TEMP RANGE PIN PACKAGE SDA 1 8 VDD 8 SO D DS75LXS+ -55°C to +125°C (150 mils) SCL 2 L S 7 A0 8 SO X 5 DS75LXS+T&R -55°C to +125°C (150 mils), O.S. 3 6 A 2500 Piece 1 DS75LXU+ -55°C to +125°C 8 µSOP GND 4 5 A2 (µMAX) 8 µSOP SO (150 mils) DS75LXU
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PDF
MCP4821-MCP4822.pdf
vs.Ambient Temperature and V DD . Noise Voltage w/G = 1) vs. Bandwidth. © 2005 Microchip Technology Inc. DS21953A-page 9 MCP4821/MCP4822 Note: Unless otherwise indicated, T = A25°C, V DD = 5V, AV SS = 0V, V REF = 2.048V, Gain = 2, R = L kΩ, C = 1L0 pF. 340 600 5.5V 320 5.0V 5.5V 4.0V 550 5.0V 300 3.0V 3.0V
in „Digital-Analog-Umsetzer (10V -> 1mV Auflösung)“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Akkulader4.bas
Erhaltungsladen Portd.7 = 0 'grüne LED an Sekunden = 0 Minuten = 0 Messzaehler = 0 Call Set_daconverter(300) 'Strom 300mA einstellen Enable Compare1a 'Interrupts für weiteren Ablauf aktivieren Enable Interrupts End If While Status <> 0 ' in dieser Schleife verharren, bis Status auf Ende (0) gesetzt wird If
in „AVR resettet auf mysteriöse Art“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BSN10.pdf
handbook, halfpage MRA782 MRA783 500 handbook, halfpage 500 VGS = 10 V ID I (mA) D 7 V 400 (mA) 400 5 V 300 300 4 V 200 200 3 V 100 100 2.5 V 0 0 0 4 8 V (V) 12 0 2 4 6 8 10 DS VGS (V) Tj= 25 °C. VDS= 10 V; j = 25 °C. Fig.4 Typical output characteristics. Fig.5 Typical transfer characteristics. MRA788 MRA787
in „Pegelwandler lässt TWI erfrieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irl3705n.pdf
5.0V, D = 46A ––– ––– 0.018 V = 4.0V, I = 39A GS D VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V V DS = GS ,DI = 250µA g Forward Transconductance 50 ––– ––– S V = 25V, I = 46A fs DS D ––– ––– 25 V DS= 55V, VGS = 0V DSS Drain-to-Source Leakage Current ––– ––– 250 µA V = 44V, V = 0V, T = 150°C DS GS J
in „Anschluss MOSFET IRL3705N“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irf3205.pdf
On-Resistance Vs. Temperature IRF3205 8000 VGS = 0V, f = 1MHz 20 C = C + C , C SHORTED ID = 59A 7000 iss gs gd ds ) Crss = C gd V V DS = 44V Coss = C ds+ C gd ( V DS = 28V 6000 g16 V = 11V F C iss t DS ( o e 5000 V c e12 a r i 4000 Coss u c S p - a 3000 - 8 , t C a G 2000 Crss , G 4 V 1000 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 30 60 90 120 150 180 V , Drain-to-Source Voltage (V) DS Q G Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-SourceVoltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED ) BY R DS(on) A t n 10µs
in „Schaltung zu Kondensatorentladungsschweißen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irl3705n.pdf
5.0V, D = 46A ––– ––– 0.018 V = 4.0V, I = 39A GS D VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V V DS = GS ,DI = 250µA g Forward Transconductance 50 ––– ––– S V = 25V, I = 46A fs DS D ––– ––– 25 V DS= 55V, VGS = 0V DSS Drain-to-Source Leakage Current ––– ––– 250 µA V = 44V, V = 0V, T = 150°C DS GS J
in „Ventilansteuerung mit Mosfet - Temperatur?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
aod522.pdf
0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics 600 0.030 TC= 25 °C 500 0.025 ) ) ( ( e TC= 125 °C c n 400 n 0.2 0 t s u s n 300 R 0.05 c n VGS = 4.5 V n O r T C - 55 °C –) T 200 (0.010 VGS = 10V
in „Suche einfache Möglichkeit 24V 6A DC zu schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MC_product_selection_AN.pdf
applications that can also ge accelerate the product time-to-market rate. rg ) Ω) chr °) ich( l e( /Ds g hr n ue st lf ot er tn ares camA-ertea lCo DESCRIPTION Chemistry SpeM Ites Chyc Diat( Opep Iii R C R T This application note shows characteristics of some Alkaline 0.3 100-300 1 0.25C -20-+55ery popular
in „Hackbarer(?) 21 EUR Quadcopter“ · Mikrocontroller und Digitale Elektronik ·
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24lc16.pdf
time T LOW 1300 — ns 4.5V≤ VCC ≤5.5V 4700 — 2.5V≤VCC ≤ 5.5V (E-temp range) SDA and SCL rise time TR — 300 ns 4.5V≤ VCC ≤5.5V (Note 1) (Note 1) — 1000 2.5V≤VCC ≤ 5.5V (E-temp range) (Note 1) SDA and SCL fall time TF — 300 ns (Note 1) START condition hold time T HDSTA 600 — ns 4.5V≤ Vcc≤ 5.5V 4000 — 2.5V≤
in „Tipsend2 Pollin“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf840_und_irf840fi.pdf
Voltage V = V I = 250 A 2 3 4 V GS(th) DS GS D R DS(on) Static Drain-source On V GS = 10V D = 4.4 A 0.74 0.85 Resistance ID(on) On State Drain Current V DS> ID(on) R DS(on)maxVGS = 10 V 8 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(∗) Forward V DS> ID(on) R DS(on)max ID= 4.4 A 4.9 6 S Transconductance Ciss Input Capacitance V DS= 25 V f = 1 MHz V GS= 0 1100 1500 pF Coss Output Capacitance 190 240 pF Crss Reverse Transfer 80 110 pF Capacitance
in „Unterschied zw. IRF840 und IRF840FI“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Frequenzgang.pdf
frequency Oszilloskop Type Tektronix Rigol mV frequency response TDS3014 TDS210 DS1104Z DS1054Z 100MHz 60MHz (100MHz) 50MHz 700 MHz mV mV mV mV 1 662 686 663 672 2 666 684 672 664 600 5 668 684 668 668 10 669 676 664 664 20 663 664 656 648 500 40 656 638 644 612 60 651 602 618 568 80 638 548 584 522 400 100 624 480 560 488 120 592 400 536 456 140 559 324 512 432 300 TDS3014 TDS210 160 513 244 488 412 180 459 176 456 396 DS1054Z DS1104Z 200 402 112 432 376 200 220 339 60 408 360 240 279 386 340 260 235 374 336 100 280 187 346 312 Date: 29. Aug. 2015 300 159 332
in „Rigol-DS1054Z“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP41010.pdf
year code, week code, facility code, mask rev#, and assembly code. 2003 Microchip Technology Inc. DS11195C-page 23 MCP41XXX/42XXX 8-Lead Plastic Dual In-line (P) – 300 mil (PDIP) E1 D 2 n 1 α E A A2 L c A1 β B1 p eB B Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins
in „Widerstand regeln“ · Mikrocontroller und Digitale Elektronik ·
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PDF
11195c.pdf
year code, week code, facility code, mask rev#, and assembly code. 2003 Microchip Technology Inc. DS11195C-page 23 MCP41XXX/42XXX 8-Lead Plastic Dual In-line (P) – 300 mil (PDIP) E1 D 2 n 1 α E A A2 L c A1 β B1 p eB B Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins
in „DC-DC Wandler mit MCP42010“ · Mikrocontroller und Digitale Elektronik ·
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PDF
mcp41xxx.pdf
year code, week code, facility code, mask rev#, and assembly code. 2003 Microchip Technology Inc. DS11195C-page 23 MCP41XXX/42XXX 8-Lead Plastic Dual In-line (P) – 300 mil (PDIP) E1 D 2 n 1 α E A A2 L c A1 β B1 p eB B Units INCHES* MILLIMETERS Dimension Limits MIN NOM MAX MIN NOM MAX Number of Pins
in „Schaltregler, Feedback und Op Amp“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
rtc.pdf
Hand-Held Devices PART TEMP RANGE PIN- TOP MARK GPS/Telematics Devices PACKAGE Embedded Time Stamping DS1390U-18 -40°C to +85°C 10 µSOP DS1390 rr-18 Medical Devices DS1390U-3 -40°C to +85°C 10 µSOP DS1390 rr-3 DS1390U-33 -40°C to +85°C 10 µSOP DS1390 rr-33 DS1391U-18 -40°C to +85°C 10 µSOP DS1391 rr-18 DS1391U-3 -40°C to +85°C 10 µSOP DS1391 rr-3 DS1391U-33 -40°C to +85°C 10 µSOP DS1391 rr-33 DS1392U-18 -40°C to +85°C 10 µSOP DS1393 rr-18 DS1392U-3 -40°C to +85°C 10 µSOP DS1392 rr-3 Typical Operating
in „ein Uhrenquartz für AVR und RTC???“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HKT05N10-_5N10_-.pdf
HKT05N10 HIGH VOLTAGE MOSFET (N-CHANNEL) FEATURES Low on-resistance:VDS100V,R DS(ON)115mΩ@V =10GSI =3A D Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Surface Mount device MECHANICAL DATA SOT-23 Case: SOT-23 Case Material: Molded Plastic. UL flammability
in „Unbekanntes SMD Bauelement 5N10“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
SST5912_Datasheet_Rev_A.pdf
= 0V V VGS(OFF) Gate-Source Cut off Voltage -3.5 -1 -5 V DS= 10V, D = 1nA 2 IDSS Saturation Drain Current 15 7 40 mA V DS= 10V, GS = 0V -1 -100 pA V GS= -15V, DS = 0V IGSS Gate Reverse Current -0.2 nA TA = 125 C -1 -100 pA V DG= 10V, D = 5mA IG Gate Operating
in „Was ist das für ein Bauteil? Bzw welcher Hersteller?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MIC94030BM4.PDF
Units VBDSS Drain-Source Breakdown VoltageV GS= 0V, D = 250 A 13.5 V VGS Gate Threshold Voltage V DS= VGS, D = 250 A 0.6 1.0 1.4 V I Gate-Body Leakage V = 0V, V = 12V, Note 2, Note 3 1 A GSS DS GS R Gate-Source Resistor V = 0V, V = 12V, Note 2, Note 4 500 750 1000 k GS DS GS C Input Capacitance V = 0V, V = 12V 100 pF ISS GS DS IDSS Zero Gate Voltage Drain CurrenV DS= 12V, VGS= 0V 25 A V DS= 12V, VGS= 0V, J = 125°C 0.010 250 A ID(ON) On-State Drain Current V DS= 10V, VGS= 10V, Note 5 6.3 A RDS(ON) Drain-Source On-State Resist
in „MOSFET ohne Body-Diode“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
mosfet_K3673.pdf
=0V 700 V Gate threshold voltage VGS(th) ID= 250 A VDS=V GS 3.0 5.0 V V DS=700V V GS=0V T c=25°C 25 µA Zero gate voltage drain current IDSS V DS=560V V GS=0V Tch=125°C 250 Gate-source leakage current IGSS V GS=±30V V DS=0V 100 nA Drain-source on-state resistance RDS(on) ID=5A V GS=10V 0.91 1.18 Ω gfs S Forward transcondutance ID=5A VDS=25V 5 9.5 Input capacitance Ciss V DS=25V 900 1350 pF Output capacitance Coss V GS=0V 140 210 Reverse transfer capacitance Crss f=1MHz 8 12 Turn-on timeon td(on) VCC =300V ID=5A 22 33 ns tr VGS =10V 6 9 Turn-off timoff td(off) R GS=10Ω 40
in „Mosfet K3673 01“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sihfr014.pdf
CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 μA 60 - - V DS GS D VDS temperature coefficient ΔV DS/TJ Reference to 25 °C, D = 1 mA - 0.068 - V/°C Gate-source threshold voltage V GS(th) V DS= V GS, D = 250 μA 2.0 - 4.0 V Gate-source leakage I V = ± 20 V - - ±
in „Hilfe bei Bauteil identifikation“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Littelfuse_Discrete_MOSFETs_N-Channel_Standard_IXT_1N450HV_Datasheet.PDF.pdf
Typ. Max. Easy to Mount J Space Savings V V = V , I = 250A 3.5 6.0 V High Power Density GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS IDSS VDS = 3.6kV, VGS 0V 5 A Applications V DS= 4.5kV 25 μA V = 3.6kV T = 100C 15 μA DS J High Voltage Power Supplies R V = 10V, I = 50mA, Note 1 80 Capacitor Discharge Applications DS(on) GS D Pulse Circuits Laser and X-Ray Generation Systems © 2014 IXYS CORPORATION, All Rights Reserved DS100500D(04/14) IXTT1N450HV IXTH1N450HV Symbol Test Conditions Characteristic Values TO-268HV
in „SOA Diagramm richtig anwenden“ · Analoge Elektronik und Schaltungstechnik ·
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AP3031.pdf
1.1 0 20 40 60 80 100 120 140 160 180 200 220 240 260 280 300 320 340 Switch Current (A) Output Current (mA) Application Information Operation The AP3031 is a boost DC-DC converter which uses a constant frequency, current mode control scheme to provide excellent
in „Verständnisfrage Datenblatt AP3031 PMIC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
93LC46.pdf
table). CLK and DI then become “don't care” inputs waiting for a new Start condition to be detected. DS21712B-page 10 2004 Microchip Technology Inc. 93LC46/56/66 4.0 PACKAGING INFORMATION 4.1 Package Marking Information 8-Lead PDIP (300 mil) Example: XXXXXXXX 93LC46 XXXXXNNN I/PNNN YYWW YYWW 8-Lead SOIC
in „Probleme mit SPI EEPROM“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP73832T.pdf
better an open-drain output on the MCP73832. thermal performance. © 2008 Microchip Technology Inc. DS21984E-page 11 MCP73831/2 NOTES: DS21984E-page 12 © 2008 Microchip Technology Inc. MCP73831/2 4.0 DEVICE OVERVIEW The MCP73831/2 are highly advanced linear charge The UVLO circuit places the device in
in „LiPo-Charger mit MCP73832T“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP73831-2_ENG_TDS.pdf
better an open-drain output on the MCP73832. thermal performance. © 2008 Microchip Technology Inc. DS21984E-page 11 MCP73831/2 NOTES: DS21984E-page 12 © 2008 Microchip Technology Inc. MCP73831/2 4.0 DEVICE OVERVIEW The MCP73831/2 are highly advanced linear charge The UVLO circuit places the device in
in „LiPo-IC MCP73831 kennt keine Ladeschlussspannung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AN1154_Precision_Temperature_Sensing_with_RTD_Circuits.pdf
low cost, high performance, plug and play solution for all RTDs. © 2008 Microchip Technology Inc. DS01154A-page 5 AN1154 NOTES: DS01154A-page 6 © 2008 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification
in „PT100 Zehntel Grad Auflösung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
_FET-P__JCET_AO3401.pdf
-1.5 -2.0 -2.5 -3.0 DDAIN TO SOURCE VOLTAGE VDS (V) GATE TO SOURCE VOLTAGE V (V) GS R —— I R —— V DS(ON) D DS(ON) GS 180 180 T =25 ℃ T =25 ℃ a a Pulsed Pulsed 150 150 ) Ω Ω m m ( ( N 120 V GS2.5V ) 120 ( ( D D R R E 90 E 90 N N A V =-4.5V A T GS T I I ID=-2A E 60 E 60 - R N N O V =-10V O GS 30 30 0
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PDF
upd65.pdf
voltage VDD = 2.0 to 3.6 V Operating ambient temperature TA = –40 to +85 °C Package 20-pin plastic SSOP (300 mil) Data Sheet U14380EJ2V0DS00 3 PD64A, 65 CONTENTS 1. PIN FUNCTIONS.........................................................................................................6..................... 1.1
in „Gesucht ... UPD65013 ...“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ds1822.c
delay_us(5); // Warten bis Slave reagiert DS1822_DIR = 1; // Jetzt Bus auf Antwort prüfen to = 300; while (DS1822_PIN) { if (--to==0) return(0); delay_us(1); } delay_us(480); return (1); } // Fragt ROM Code ab // Rückgabe: 1=ok, 0=Fehler byte DS1822
in „PIC: CCS Compiler Ansteuerung DS18B22 Temperatursensor“ · Projekte & Code ·
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PDF
STP3NB90FP.pdf
th) Gate Threshold V DS= VGS D = 250 A 3 4 5 V Voltage R DS(on) Static Drain-source On V GS= 10V ID= 1.7 A 4 4.2 Resistance ID(on) On State Drain Current V DS> ID(on) R DS(on)max 3.5 A V GS= 10 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(∗) Forward V DS> ID(on) R DS(on)max D = 1.7 A 1.6 S Transconductance Ciss Input Capacitance V DS= 25 V f = 1 MHz VGS = 0 700 pF Coss Output Capacitance 90 pF C Reverse Transfer 7 pF rss Capacitance 2/6 STP3NB90/FP ELECTRICAL
in „unbek. TO220 Bauteil in einem Schaltnetzteil“ · Mikrocontroller und Digitale Elektronik ·
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IRF1404.pdf
IRF1404 10000 20 VGS = 0V, f = 1 MHZ D = 121A V = 32V Ciss= gs+ Cgd Cds SHORTED V VDS = 20V C = C ( DS 8000 rss gd g 16 F Coss = ds+ Cgd l ( o c 6000 Ciss V a r 12 c u a S a 4000 o , Coss - 8 C t 2000 G , S 4 Crss VG 0 1 10 100 FOR TEST CIRCUIT 0 SEE FIGURE 13 0 50 100 150 200 V , Drain-to-Source Voltage (V) Q , Total Gate Charge (nC) DS G Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-SourceVoltage Gate-to-SourceVoltage 1000 10000 OPERATION IN THIS AREA LIMITED ) BY RDS(on) t TJ= 175 C n r100 A000 u t 10us C
in „MOSFET wird sehr heiß“ · Analoge Elektronik und Schaltungstechnik ·