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PDF
2243913.pdf
to Mechanical Potentiometers DS00219 — Digital Potentiometer Design Guide DS22017 — Signal Chain Design Guide DS21825 2008-2013 Microchip Technology Inc. DS22107B-page 75 MCP454X/456X/464X/466X NOTES: DS22107B-page 76 2008-2013
in „[V] 44St. SMD Digital I2C / 256 Steps 10K Poti Microchip MCP4561- 103E/MS (MSOP8 Gehäuse)“ · Markt ·
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PDF
2243913.pdf
to Mechanical Potentiometers DS00219 — Digital Potentiometer Design Guide DS22017 — Signal Chain Design Guide DS21825 2008-2013 Microchip Technology Inc. DS22107B-page 75 MCP454X/456X/464X/466X NOTES: DS22107B-page 76 2008-2013
in „[V] 10St. Digitalpoti MCP4561-103E/MS 8MSOP orginalverpackt. (9€)“ · Markt ·
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PDF
ZLDO1117.pdf
MLCC I = 100mA, I = 500mA PRELOAD step IPRELOAD = 100mA, I STEP = 500mA 10mV 10mV 0 0 -10mV -10mV 600mA 600mA 100mA 100mA Transient Load Regulation with 10µF Tantalum Transient Load Regulation with 4.7µF MLCC Capacitor Capacitor ZLDO1117 2.5V C IN= 1µF, C OUT = 4.7µF MLCC I = 100mA LOAD 10 0 5V 4V 10µs
in „Def. Mikrocontroller auf Geschirrspüler-Platine?“ · Haus & Smart Home ·
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PDF
ds1308.pdf
2 DS1308 Low-Current I C RTC with 56-Byte NV RAM General Description Benefits and Features The DS1308 serial real-time clock (RTC) is a low-power, ●● Compatible with Crystal ESR Up to 100kΩ Allows a full
in „[V] kleines Konvolut ältere DIL / DIP ICs (8€)“ · Markt ·
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PDF
APM2095.pdf
Parameter Test Condition Unit Min. Typ. Max. Static Drain-Source Breakdown BVDSS Voltage V GS=0V , DS=-250µA -20 V Zero Gate Voltage Drain DSS Current V DS-16V , VGS0V -1 µA VGS(th) Gate Threshold Voltage V DSV GS ,DS =-250µA -0.5 -0.7 -1 V I Gate Leakage Current V =±10V , V =0V ±100 nA GSS GS DS a Drain-Source
in „Ersatztyp P-Kanal MosFet APM2095P low gate voltage“ · Mikrocontroller und Digitale Elektronik ·
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PDF
APM2601.pdf
Symbol Parameter Test Condition Unit Min. Typ. Max. Static Drain-Source Breakdown BV DSS V GSV , I DS250µA -20 V Voltage Zero Gate Voltage Drain DSS Current V DS-16V , VGS0V -1 µA VGS(th) Gate Threshold Voltage V DSV GS ,DS =-250µA -0.45 -1.2 V I Gate Leakage Current V =±8V , V =0V ±100 nA GSS GS DS
in „SMD-Bauteilbestimmung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
CFAG12864BTFHV_v3.0.pdf
current EE Master mode; 1/128 duty - - 100 (5) Operating Frequency fOP1 Master mode; External clock 50 - 600 kHz fOP2 Slave mode 0.5 - 1500 NOTES: 1. Applies to input terminals FS, DS1, DS2, CR, SHL, MS and PCLK2 and I/O terminals DIO1, DIO2, M and CL2 in the input state. 2. Applies to output terminals CLK1
in „avr asm LCD Problem“ · Mikrocontroller und Digitale Elektronik ·
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PDF
STP15N80K5.pdf
Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance AM15443v1 VGS VDS R DS(on) AM15441v1 (V) (Ω) VDD=640 V (V) 12 VDS 600 I=14 A 0.5 VGS=10V 10 500 0.4 8 400 0.3 6 300 4 200 0.2 2 100 0.1 0 Q g(nC) 0 0 5 10 15 20 25 30 0 5 10 15 20 25 ID(A) Figure 12. Capacitance variations
in „1500V 8A mit MOSFET schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
datasheet_ao3400.pdf
Drain-Source Breakdown Voltage ID=250 A, V GSV 30 V V =30V, V =0V 1 IDSS Zero Gate Voltage Drain Current DS GS A T J55°C 5 IGSS Gate-Body leakage current V DSV, V =GS12V 100 nA VGS(th) Gate Threshold Voltage V DS GS D =250 A 0.65 1.05 1.45 V I On state drain current V =4.5V, V =5V 30 A D(ON) GS DS V GS=10V
in „24v rgbww controller mosfets und ic's“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
1811081213_Alpha---Omega-Semicon-AO3400A_C20917.pdf
Drain-Source Breakdown Voltage ID=250 A, V GSV 30 V V =30V, V =0V 1 IDSS Zero Gate Voltage Drain Current DS GS A T J55°C 5 IGSS Gate-Body leakage current V DSV, V =GS12V 100 nA VGS(th) Gate Threshold Voltage V DS GS D =250 A 0.65 1.05 1.45 V I On state drain current V =4.5V, V =5V 30 A D(ON) GS DS V GS=10V
in „Suche Bauteil XOXL-3E“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AO3400A.pdf
Drain-Source Breakdown Voltage ID=250 A, V GSV 30 V V =30V, V =0V 1 IDSS Zero Gate Voltage Drain Current DS GS A T J55°C 5 IGSS Gate-Body leakage current V DSV, V =GS12V 100 nA VGS(th) Gate Threshold Voltage V DS GS D =250 A 0.65 1.05 1.45 V I On state drain current V =4.5V, V =5V 30 A D(ON) GS DS V GS=10V
in „Umsetzung eines 5V Output mit ESP32 und AQY Halbleiterrelais“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLR6225PBF_NMOS.pdf
PD-97594 IRLR6225PbF ® HEXFET Power MOSFET V 20 V DS R D D DS(on) max 4.0 mΩ (@V GS= 4.5V) R DS(on) max 5.2 S (@V GS= 2.5V) mΩ G G Q g (typical) 48 nC D-Pak S IRLR6225PbF RG (typical) 2.2 Ω D 42 h A G D S Gate Drain Source Applications • Battery Protection
in „FET abgeraucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
drv8350f_7_.pdf
value of I was DRIVEN DRIVEN selected as 200-mA sink. 9.2.1.2.3 V Overcurrent Monitor Configuration DS The V monitors are configured based on the worst-case motor current and the R of the external DS DS(on) MOSFETs as shown in Equation 13. VDS_OCP ! max u R DS(on)max (13) 9.2.1.2.3.1DS Overcurrent Example The goal of this example is to set the V DS monitor to trip at a current greater than 75 A. According to the CSD19535KCS 100 V N-Channel NexFET ™ Power MOSFET data sheet, the R DS(on)value is 2.2 times higher at 175°C, and the maximum R DS(on)
in „BLDC-Motor: Überspannung beim Bremsen trotz Durchschaltung aller Low-Side-MOSFETs?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
OB2223CPA.pdf
▯ BVdss On Resistance（DIP8）Static, Id=0.45A 600 15 lΏ Rdson On Resistance（SOP8）Static, Id=0.45A {5 Ώ t o a l n t i e f id o n t C h ri g -B n O ©On-Bright Electronics Co- 6 -ntial OB_DOC_DS_2223A0 OB2223 High Precision Low Cost MCM Power Switch CHARACTERIZATION
in „SMD IC "G1768A" Datenblatt gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Si9435BDY.PDF
Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES D TrenchFETr Power MOSFET V DS (V) rDS(on) (W) D (A) 0.042 @ VGS = −10 V −5.7 −30 0.055 @ VGS= −6 V −5.0 0.070 @ VGS = −4.5 V −4.4 S SO-8 S D 1 8 G S D 2 7 S D 3 6 G 4 5 D Top View D Ordering Information: Si9435BDY Si9435BDY-T1 (with
in „AVR Ausgang an FET, galvanisch getrennt, so ok?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irfiz34n.pdf
16A C iss= Cgs + Cgd , Cds SHORTED ▯VDS = 44V C rss= Cgd V ▯V = 28V 1000 Ciss C oss= Cds + Cgd (16 DS g ) l p 800 o e V c Coss c12 a u c 600 o a - a - 8 C t C 400 a C▯rss , S4 200 VG FOR TEST CIRCUIT▯ SEE FIGURE 13 0 A 0 A 1 10 100 0 10 20 30 40 V , Drain-to-Source Voltage (V) Q , Total Gate Charge (nC) DS G Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED A BY R DS(on) t n r A u 100 t 100 C n a r 10µs
in „Mosfet Treiber Baustein“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ART2K0FE_2K0FES_2K0FEG.pdf
drain-source breakdown voltage V GS = 0 V; D = 5.5 mA 203 208 - V V GS(th) gate-source threshold voltage V DS = 20 V; D = 550 mA 1.5 2.1 2.5 V I drain leakage current V = 0 V; V = 65 V - - 2.8 A DSS GS DS IDSX drain cut-off current V GS = VGS(th)+ 3.75 V; - 77 - A V = 20 V DS IGSS gate leakage current V GS
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Datei
Uhr_Thermometer.bas
= Portc.4 Config Scl = Portc.5 'LM75-Adressen Const Lm75_schreiben = &H90 Const Lm75_lesen = &H91 'DS1307-Adresse Const Ds1307_schreiben = &HD0 Const Ds1307_lesen = &HD1 I2cinit '--------------------- 'Konfiguration Eingabe '--------------------- Ddrb = &B0000_0000 Taster_uhrzeit Alias Pinb.2 Taster_incr
in „Bascom LM75 Schalttemperatur auslesen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF830.pdf
VDS = VGS ID= 250 A 2 3 4 V Voltage R Static Drain-source On V = 10V I = 2.7 A 1.35 1.5 DS(on) GS D Resistance ID(on) On State Drain Current VDS > ID(on) RDS(on)max 4.5 A VGS = 10 V DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (∗) Forward V > I x R I = 2.7 A 2.5 S fs DS D(on) DS(on)max D Transconductance C Input Capacitance V = 25 V f = 1 MHz V = 0 610 pF iss DS GS Coss Output Capacitance 120 pF Crss Reverse Transfer 10 pF Capacitance 2/8 IRF830 ELECTRICAL CHARACTERISTICS (continued
in „Spannunngsübertragung mit Luftspulen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL540N-UMW.pdf
Power MOSFET Description The UMW IRL540N uses advanced trench technology and design to provide excellenDS(ON)ith low gate charge. It can be used in a wide variety of applications. General Features ● V DS = 100V,D =30A RDS(ON)< 28mΩ @ V GS0V (Typ:24 mΩ) Schematic diagram ● Special process technology for high
in „Problem mit Mosfet IRL540 an 52V, öffnet nicht mehr“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
armbian_modules.txt
max1111 f71882fg ina209 sht21 jc42 pcf8591 vt1211 sht15 hwmon-vid ds620 ntc_thermistor adt7462 lm92 ads1015 lm77 ltc2945 lm70 max6639 max31722 w83793 lm75 tc74 pc87427 ina3221 w83795 lm90 lm95241 nct7904 hih6130 lineage-pem sch5627 lm95245 adm9240 mcp3021 f71805f g760a
in „Samba auf Banana Pi Pro installieren“ · PC Hard- und Software ·
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PDF
DS4E-M-DC1.5V-Panasonic.pdf
type 12 DS1E-M-DC12V DS2E-M-DC12V DS4E-M-DC12V 24 DS1E-M-DC24V DS2E-M-DC24V DS4E-M-DC24V 48 DS1E-M-DC48V DS2E-M-DC48V DS4E-M-DC48V 1.5 DS1E-S-DC1.5V DS2E-S-DC1.5V DS4E-S-DC1.5V 3 DS1E-S-DC3V DS2E-S-DC3V DS4E-S-DC3V 5 DS1E-S-DC5V DS2E-S-DC5V DS4E-S-DC5V S (200mW) 6 DS1E-S-DC6V DS2E-S-DC6V DS4E-S-DC6V type 9 DS1E-S-DC9V DS2E-S-DC9V DS4E-S-DC9V 12 DS1E-S-DC12V DS2E-S-DC12V DS4E-S-DC12V 24 DS1E-S-DC24V DS2E-S-DC24V DS4E-S-DC24V
in „"Merkwürdiges" Relais.“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DSxE.pdf
Vrms Max.carrying current 3 A DC, AC FCC surge voltage between contacts 8 and coil 1,500 V (Expect DS1-S type) Expected Mechanical 10 (at 600 cpm) (1 Form C 2 coil latching type: 10 ) Operate time* 3(at nominal voltage) Approx. 3 ms life (min. Electrical Release time (without diode)* (at operations)
in „Relais Polung“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Clockplot_ino.ino
right servos // - added code to support DS1307, DS1337 and DS3231 real time clock chips // - see http://www.pjrc.com/teensy/td_libs_DS1307RTC.html for how to hook up the real time clock // delete or mark the next line as comment if you don't
in „Plotclock zusammenbauen und programmieren“ · Mikrocontroller und Digitale Elektronik ·
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Datei
plotclock.c
right servos // - added code to support DS1307, DS1337 and DS3231 real time clock chips // - see http://www.pjrc.com/teensy/td_libs_DS1307RTC.html for how to hook up the real time clock // delete or mark the next line as comment if you don't
in „Plotclock zusammenbauen und programmieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
162537-da-01-en-IRF_9540_N.pdf
Vs. Temperature IRF9540N 3000 V = 0V, f = 1MHz 20 I = -11A GS D Ciss= C gs + Cgd , Cds SHORTED ) V DS = -80V Crss= C gd ( 2500 Coss= C ds + Cgd e16 V DS = -50V g V DS = -20V F l p2000 o e C iss V c c12 n u i1500 o a - p t a C oss e 8 ,1000 a C G C rss , S4 500 VG - FOR TEST CIRCUIT SEE FIGURE 13 0 A
in „iMax B6 defekt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
A100_IRF7413_IR.pdf
Vs. Temperature www.irf.com 3 IRF7413PbF 3200 20 VGS = 0V, f = 1MHz ID = 7.3A Ciss = Cgs + Cgd, C ds SHORTED ▯V = 24V 2800 Crss = Cgd ) DS C▯iss C = C + C ( ▯VDS = 15V oss ds gd g16 ) 2400 t p o ( 2000 C▯oss V c c12 a u c 1600 o a - a - 8 C 1200 t C a C▯rss , 800 S VG4 400 FOR TEST CIRCUIT▯ SEE FIGURE
in „MOSFET - Verständnisfrage“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL3713.pdf
Drain-to-Source On-Resistance mΩ ––– 3.3 4.0 V GS= 4.5V,DI = 30A VGS(th) Gate Threshold Voltage 1.0 ––– 2.5 V V DS= VGS D = 250µA ––– ––– 50 V DS= 30V, GS = 0V DSS Drain-to-Source Leakage Current ––– ––– 20 µA V DS= 24V, GS = 0V ––– ––– 100 V DS= 24V, GS = 0V, J = 125°C Gate-to-Source Forward Leakage ––– ––– 200
in „Logic Level Mosfet - Welcher "kann mehr"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
si1402dh.pdf
100 nA VDS = 30 V, GS = 0 V 1 Zero Gate Voltage Drain Current DSS V = 30 V, V = 0 V, T = 55 °C 5 µA DS GS J On-State Drain Current ID(on) V DS ≥ 5 V, GS = 4.5 V 4 A a V GS = 4.5 V,DI = 3.0 A 0.064 0.077 Drain-Source On-State Resistance R DS(on) Ω V GS = 2.5 V,DI = 2.0 A 0.095 0.120 a Forward Transconductance
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PDF
Si2303.pdf
Drain-Source Breakdown Voltage V (BR)DSS V GS= 0 V, D = - 10 µA - 30 V Gate-Threshold Voltage V GS(th) V DS= V GS, D = - 250 µA - 1.0 - 3.0 Gate-Body Leakage IGSS V DS = 0 V, GS = ± 20 V ± 100 nA V = - 30 V, V = 0 V Zero Gate Voltage Drain Current I DS GS - 1 µA DSS VDS = - 30 V,GS = 0 V, J = 55 °C - 10 On-State Drain Current ID(on) V DS≤ - 5 V, GS = - 10 V - 6 A V GS = - 10 VD I = - 1.7 A 0.150 0.200 Drain-Source On-Resistance a R DS(on) Ω VGS = - 4.5 V,DI = - 1.3 A 0.285 0.380 a g V = - 5 V, I = - 1.7 A Forward Transconductance fs
in „Highside-Switch gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RequiresAcrobat6.pdf
from http://www.datasheetarchive.com. GF9926 Dual N-Channel Enhancement-Mode MOSFET LowV GS(th) V DS 20V R DS(ON) 30 ΩmI 6.0AD H C ® E N T R E T F D1 D1 D2 D2 E N 8 7 6 5 G SO-8 0.189 (4.80) Q1 Q2 8 5 1 2 3 4 0.157 (3.99) 0.150 (3.81) S1 G1 S2 G2 0.244 (6.20) 0.228 (5.79) 1 4 Dimensions in inches 0.05
in „Ersatz-MosFet für GF9926“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
SMPD_MOSFET_and_IGBTs_Product_Brief.pdf
the screws clockwise. January 2013 www.ixys.com PBNSMPD_1_0 SMPD Power MOSFETs Summary Table V I R DS(on) C Q R Part DSS D(cont) max iss g trr PD thJC Package Number max TC=25°C T=25°C typ typ (ns) (W) max Style (V) (A) J (pF) (nC) (°C/W) (Ω) TM TM TrenchT2 GigaMOS MMIX1T600N04T2 40 600 0.0013 40000
in „IXYS Bauteil / Keine Info gefunden“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FDC638P-D.PDF
Voltage V DS = VGS ID= –250 μA –0.4 –0.8 –1.5 V ΔV GS(th) Gate Threshold Voltage ID= –250 μA,Referenced to 25°C 3 mV/°C ΔT J Temperature Coefficient R Static Drain–Source 39 48 DS(on) V GS = –4.5 V, ID= –4.5 A mΩ
in „richtiger n-Kanal MOSFET, 3,3V soll 5V und 100mA schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
STP16NF_--_156110-da-01-en-PWRMOS_60V_16A_STP16NF06L_STM.pdf
Max. Unit V (BR)DSS Drain-source ID= 250 µA, GS = 0 60 V Breakdown Voltage IDSS Zero Gate Voltage V DS= Max Rating 1 µA Drain Current GS = 0) V DS= Max Rating TC= 125°C 10 µA Gate-body Leakage V GS= ± 16V ±100 nA IGSS Current (V = 0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(
in „Fragen zu Vorwiderständen (?) und MOSFET-Auswahl bei 12V-Steuerung am Raspberry Pi“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TXSTM-POWERMOSFET-STX-16NF06L_EN.pdf
Max. Unit V (BR)DSS Drain-source ID= 250 µA, GS = 0 60 V Breakdown Voltage IDSS Zero Gate Voltage V DS= Max Rating 1 µA Drain Current GS = 0) V DS= Max Rating TC= 125°C 10 µA Gate-body Leakage V GS= ± 16V ±100 nA IGSS Current (V = 0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(
in „TLC5940 (Arduino Mega) flackert. Wie Kondensatoren einsetzen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DE.pdf
25.0 12.5 15.24 7.62 6-.047 dia 2.54 12.70 7.62 8-.047 dia .984 .492 .600 .300 .100 .500 .300 12.0 .472 7.62 7.62 .300 .300 3.5 .020 .138 0.8 0.4 .020 dia .032 0.8 .016 Tolerance : ±0.1 ±.004 .032 2.44 7.62 15.24 7.62 1.0 .096 .300 Schematic (Bottom view) .600 .300 .039 Single
in „Spart man Strom wenn man den ADC langsamer taktet?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
37378-DI300.pdf
- Halogen- gie von Siemens jetzt den R DS(onum den lampe Faktor5bis10beigleicherChipfläche.So Bild 3: Arbeitsprinzip verringertsichdieVerlustleistungamTran- des Phasenanschnitt- sistor im eingeschalteten Zustand erheb- 996176904dimmers mit Triac
in „Mos-Fet wird heis“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
37378-DI300.pdf
- Halogen- gie von Siemens jetzt den R DS(onum den lampe Faktor5bis10beigleicherChipfläche.So Bild 3: Arbeitsprinzip verringertsichdieVerlustleistungamTran- des Phasenanschnitt- sistor im eingeschalteten Zustand erheb- 996176904dimmers mit Triac
in „Dimmer will nicht richtig dimmen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLML6244TRPBF_Datenblatt.pdf
PD - 97535A IRLML6244TRPbF ® HEXFET Power MOSFET V DS 20 V V GS Max ±12 V * R DS(on) max 21.0 m (@V GS = 4.5V) ' R DS(on) max 27.0 m 6 Micro3TM (SOT-23) (@V GS = 2.5V) IRLML6244TRPbF Application(s) Load/ System Switch Features and Benefits Features
in „passender FET wie beschalten?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF7314_P-Channel_Dual_20V_5.3A_0.058Ohm.pdf
DI = -2.9A ––– 0.082 0.098 V GS= -2.7V,DI = -1.5A VGS(th) Gate Threshold Voltage -0.70 ––– ––– V V DS= VGS, D = -250µA gfs Forward Transconductance ––– 5.9 ––– S V DS= -10V, D = -1.5A I Drain-to-Source Leakage Current ––– ––– -1.0 µA V DS= -16V, VGS= 0V DSS ––– ––– -25 V DS= -16V, GS = 0V, TJ= 55°C IGSS
in „mit 2,7V schalten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf7314.pdf
DI = -2.9A ––– 0.082 0.098 V GS= -2.7V,DI = -1.5A VGS(th) Gate Threshold Voltage -0.70 ––– ––– V V DS= VGS, D = -250µA gfs Forward Transconductance ––– 5.9 ––– S V DS= -10V, D = -1.5A I Drain-to-Source Leakage Current ––– ––– -1.0 µA V DS= -16V, VGS= 0V DSS ––– ––– -25 V DS= -16V, GS = 0V, TJ= 55°C IGSS
in „FTDI FT232RL - Probleme mit Platine/Verbinden mit PC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf540n.pdf
––– ––– 44 mΩ VGS = 10V,DI = 16A▯R V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 21 ––– ––– S VDS = 50V,DI = 16AR ––– ––– 25 V = 100V, V = 0V DSS Drain-to-Source Leakage Current µA DS GS ––– ––– 250 VDS = 80V, GS = 0V, J = 150°C Gate-to-Source Forward
in „Mosfet vor negativer Spannung / Wechselspannung schützen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF7416_datasheet.pdf
1.0 ––– ––– V VDS = VGS, D = -250µA g Forward Transconductance 5.6 ––– ––– S V = -10V, I = -2.8A fs DS D ––– ––– -1.0 VDS = -24V, GS = 0V IDSS Drain-to-Source Leakage Current ––– ––– -25 µA V = -24V, V = 0V, T = 125°C DS GS J Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V IGSS Gate-to-Source Reverse
in „Datenblatt / Prinzip richtig verstanden?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AO4459.pdf
Drain-Source Breakdown Voltage ID=-250 A, V GSV -30 V V =-30V, V =0V -1 IDSS Zero Gate Voltage Drain Current DS GS A TJ=55°C -5 IGSS Gate-Body leakage current V DS=0V, VGS ±20V ±100 nA V Gate Threshold Voltage V =V I =-250 A -1 -1.5 -2.5 V GS(th) DS GS D ID(ON) On state drain current V GS10V, V =DSV -30 A V GS10V, I =D6.5A 33 42 m R DS(ON) Static Drain-Source On-Resistance V GS=-4.5V, D =-5A 56 60 m gFS Forward Transconductance V DS=-5V, D =-6.5A 14 S V Diode Forward Voltage IS=-1A,V GSV -0.8 -1 V SD IS Maximum Body-Diode Continuous
in „P-Mosfet sperrt nicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCAC75N06YBTP-datasheet-3.pdf
60 V Gate-Source Leakage Current GSS V DSV, V GS=±20V ±100 nA Zero Gate Voltage Drain Current DSS V DS8V, V =GS 1 µA Gate-Threshold Voltage V V =V , I =250µA 2 4 V GS(th) DS GS D Drain-Source On-Resistance R DS(on) V GS0V, I D20A 5 6 mΩ Diode Characteristics Continuous Body Diode Current S 75 A Diode
in „Suche Ersatz für obsoleten MOSFET MCAC75N06YB-TP (oder Bezugsquelle)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irl2203ns.pdf
6000 VGS = 0V, f = 1MHz D = 60A Ciss= Cgs + Cgd ,Cds SHORTED C = C ) V = 24V 5000 Crss= Cgd + C ( V DS= 15V oss ds gd g 12 DS F t ( 4000 o e V n Ciss c 9 t u c 3000 o p o a - 6 , 2000 Coss t C G , S 3 1000 VG Crss FOR TEST CIRCUIT 0 0 SEE FIGURE 13 1 10 100 0 20 40 60 80 V DS , Drain-to-Source Voltage
in „FETs - 5V steuerspannung - selbstleitend selbstsperrend“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irfp2907.pdf
20µs PULSE WIDTH TJ= 25 C TJ= 175 C 1 10 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 I = 209A c D ) n ( T = 175 C s 2.5 n J s e e u n C100 O ) 2.0 c e ed u T = 25 C r
in „Sinusendstufe für 300A“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRFP2907.pdf
20µs PULSE WIDTH TJ= 25 C TJ= 175 C 1 10 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 I = 209A c D ) n ( T = 175 C s 2.5 n J s e e u n C100 O ) 2.0 c e ed u T = 25 C r
in „Auto-Kühler-Lüfter per PWM manuell steuern“ · Analoge Elektronik und Schaltungstechnik ·
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uhp-ma_e.pdf
VPL-X1000/N JYd120/A.C 65×70 TLP-661 JYd150/A.C S VPL-S900/M JYd120/A.C 65×70 TLP-660E JYd150/A.C 索 VPL-S600U/M JYs250/D.C 65×70 TLP-660 JYd150/A.C VPL-V500 JYs250/D.C H TLP-651E JYd150/A.C 65×70 VPL-S500 JYs250/D.C TLP-650 JYd150/A.C 尼 VPL-S400 JYd120/A.C I TLP-570E/571 JYd120/A.C 圆 85 VPL-SC60/M JYd120/A.C
in „Beamer 'wiederverwerten'?“ · Mikrocontroller und Digitale Elektronik ·
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P-FET.pdf
Voltage V (BR)DSS -30 V ID=-250µA, VGS =0V Zero Gate Voltage Drain Current I -1 µA V =-30V, V =0V DSS DS GS Gate-Body Leakage IGSS ⫾100 nA V GS=⫾20V, V DS=0V Gate-Source Threshold Voltage V GS(th) -1.0 V ID=-250µA, VDS = VGS Static Drain-Source On-State Resistance RDS(on) 0.15 Ω V GS=-10V, D =-1.6A (1) 0.23 Ω V GS=-4.5V, D =-0.8A Forward Transconductance (3) g 1.1 S V =-10V,I =-0.8A fs DS D DYNAMIC (3) Input Capacitance C iss 330 pF V DS=-25 V, GS =0V, Output Capacitance C oss 120 pF f=1MHz Reverse Transfer Capacitance C 45 pF rss SWITCHING (2) (3) Turn-On Delay Time td(on) 2.8 ns Rise
in „Review: Spannungsversorgung 3V->5V + Ein/Ausschalter“ · Mikrocontroller und Digitale Elektronik ·