-
PDF
_FET-N__JCET_AO3400.pdf
Plastic-Encapsulate MOSFETS AO3400 N-Ch ann el Enhanceme tnMode Field Ef fect ransistor V (BR)SS R DS(on)AX D SOT-23 35m Ω@10V 30 V 40mΩ @ 4.5V 5.8A 1. GAT 52m Ω @ 2.5V 2. SOURCE 3. DRAIN FEATURE APPLICATION z High dense cell design for extremely low DS(ON) z Load/Power Switching z Exceptional on-resistance
-
PDF
IRF9Z34-Vishay.pdf
- - Zero Gate Voltage Drain Current IDSS DS GS - 100 μA VDS = - 48 V, VGS = 0 V, J = 150 °C - - - 500 Drain-Source On-State Resistance RDS(on) V GS = - 10 V ID= - 11 A b - - 0.14 Ω Forward Transconductance gfs V DS = - 25 V,DI = - 11 A 5.9 - -
in „Saito Pro Charger Batterieladegerät - Mikrocontroller ATmel ATTINY26L defekt?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
MCP73831.pdf
Inc. DS21984A-page 19 MCP73831 NOTES: DS21984A-page 20 © 2005 Microchip Technology Inc. MCP73831 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory
in „Akku Ladetechnik“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRF8736.pdf
On-Resistance Vs. Temperature www.irf.com 3 IRF8736PbF 10000 V = 0V, f = 1 MHZ 5 GS D = 14.4A Ciss= Cgs+ gd, ds SHORTED ) Crss= Cgd ( VDS = 24V C = C + C g 4 V = 15V ) oss ds gd l DS p Ciss o ( e c r 3 t o c 1000 - p t a Coss t 2 , a C , S 1 Crss VG 0 100 1 10 100 0 4 8 12 16 20 V , Drain-to-Source Voltage (V) Qg, Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R (on) ) ) DS ( ( n 100 n 100 e r 100µsec u u
in „IRF8736 - Was haltet Ihr davon?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRF_1404_S.pdf
LIMITED BY R ) DS(on) ( ° n TJ= 175 C )000 e ( u100 t 10us C e i r r C100 100us D i r TJ= 25 C r e D 1ms e 10 , , I 10ms D 10 IS TC= 25 C TJ= 175 C V GS = 0 V Single Pulse 1 1 0.4 0.8 1.2 1.6 2.0 2.4 1 10 100 VSD ,Source-to-Drain Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 www.irf.com IRF1404S/L R 200 V D LIMITED BY PACKAGE DS VGS 160 D.U.T. R G + A - DD
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
bq24618.pdf
overvoltage 32 32 32 26 32 32 (V) Maximum battery 10 10 10 10 10 10 charging current (A) Switching 1200 600 600 600 600 600 frequency (kHz) JEITA charging No No Yes No No No temperature profile DPM No IINDPM IN DPM IINDPM IINDPM V INDPM Copyright © 2010–2015, Texas Instruments Incorporated Submit Documentation
in „Li-Ion - Charger & Balancing“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
datenblatt-505399-panasonic-aqz204d-photomos-relais-1-st-1-schliesser-400-vdc-400-vac-450-ma-polzahl-4.pdf
e1600 ,1600 n c i1400 a1400 a c a1200 p1200 c a AQZ102D u1000 t1000 t p O 800 AQZ202D u 800 O AQZ105D 600 600 AQZ205D AQZ207D AQZ107D 400 400 AQZ104D 200 AQZ204D 200 0 0 0 20 40 60 80 100 0 20 40 60 80 100 Applied voltage, V Applied voltage, V ACCESSORY mm inch Socket PC board pattern (BOTTOM VIEW) 5Ð.008
-
PDF
505399-panasonic-aqz204d-photomos-relais-1-st-1-schliesser-400-vdc-400-vac-450-ma-polzahl-4.pdf
e1600 ,1600 n c i1400 a1400 a c a1200 p1200 c a AQZ102D u1000 t1000 t p O 800 AQZ202D u 800 O AQZ105D 600 600 AQZ205D AQZ207D AQZ107D 400 400 AQZ104D 200 AQZ204D 200 0 0 0 20 40 60 80 100 0 20 40 60 80 100 Applied voltage, V Applied voltage, V ACCESSORY mm inch Socket PC board pattern (BOTTOM VIEW) 5Ð.008
in „Relais ansteuern“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
505399_panasonic_aqz204d_photomos_relais_1_st_1_schliesser_400_vdc.pdf
e1600 ,1600 n c i1400 a1400 a c a1200 p1200 c a AQZ102D u1000 t1000 t p O 800 AQZ202D u 800 O AQZ105D 600 600 AQZ205D AQZ207D AQZ107D 400 400 AQZ104D 200 AQZ204D 200 0 0 0 20 40 60 80 100 0 20 40 60 80 100 Applied voltage, V Applied voltage, V ACCESSORY mm inch Socket PC board pattern (BOTTOM VIEW) 5Ð.008
in „230VAC Max 200mA mit ESP32 3,3VDC schalten“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
505399-panasonic-aqz204d-photomos-relais-1-st-1-schliesser-400-vdc-400-vac-450-ma-polzahl-4.pdf
e1600 ,1600 n c i1400 a1400 a c a1200 p1200 c a AQZ102D u1000 t1000 t p O 800 AQZ202D u 800 O AQZ105D 600 600 AQZ205D AQZ207D AQZ107D 400 400 AQZ104D 200 AQZ204D 200 0 0 0 20 40 60 80 100 0 20 40 60 80 100 Applied voltage, V Applied voltage, V ACCESSORY mm inch Socket PC board pattern (BOTTOM VIEW) 5Ð.008
in „MOSFET 230V AC / 3V3 Arduino“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
GSMParkHeatingControl.pdf
6 0 6 µ T100 SH_ON/OFF C 1 C 1 C 1 C 0 1K +12V D403 +4V_SW 1 BCW66 100nF IC400 IRLML6401 R106 a IC600 Lüften/Heizen i uD d o P6KE6V8CA C408 VL Vcc U600 680 + V G F o D402 I/O VL1 I/O Vcc1 CS DAT2 SD_CS I/O Vcc2I/O VL2 DI GND Themperatur (2xx) LM2576S-ADJ LL4148 100nF I/O VL3 I/O Vcc3 VSS1 WP DS1820(TO92) DS1820(TO92) R403 VDD CD LP2950CDT +4V_ON/OFF SD_DI I/O Vcc4I/O VL4 CLK/SCLK GND L400 1K I/O VL5 I/O Vcc5 VSS2 GND D D N Q D In D Out +3,3V SD_CLK I/O Vcc6I/O VL6 DO GND G D VIC200 G D VIC201 PE-53115 G
in „Bitte um Überprüfung: GSM Steuerung mit GPS“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
GSMParkHeatingControl.pdf
6 0 6 µ T100 SH_ON/OFF C 1 C 1 C 1 C 0 1K +12V D403 +4V_SW 1 BCW66 100nF IC400 IRLML6401 R106 a IC600 Lüften/Heizen i uD d o P6KE6V8CA C408 VL Vcc U600 680 + V G F o D402 I/O VL1 I/O Vcc1 CS DAT2 SD_CS I/O Vcc2I/O VL2 DI GND Themperatur (2xx) LM2576S-ADJ LL4148 100nF I/O VL3 I/O Vcc3 VSS1 WP DS1820(TO92) DS1820(TO92) R403 VDD CD LP2950CDT +4V_ON/OFF SD_DI I/O Vcc4I/O VL4 CLK/SCLK GND L400 1K I/O VL5 I/O Vcc5 VSS2 GND D D N Q D In D Out +3,3V SD_CLK I/O Vcc6I/O VL6 DO GND G D VIC200 G D VIC201 PE-53115 G
in „Bitte um Überprüfung: GSM Steuerung mit GPS“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
lm2731.pdf
at fixed frequencies of 1.6 • 1.6-MHz (X Option), 0.6-MHz (Y Option) Switching MHz (X option) and 600 kHz (Y option). Frequency • Low R (DS) DMOS FET The use of SOT-23 package, made possible by the minimal power loss of the internal 1.8-A switch, and • Switch Current Up to 1.8 A use of small inductors
in „[V] 13St. LM2731 0.6/1.6-MHz Boost Converters With 22-V Internal FET Switch in SOT-23 (8€)“ · Markt ·
-
PDF
lm2731.pdf
at fixed frequencies of 1.6 • 1.6-MHz (X Option), 0.6-MHz (Y Option) Switching MHz (X option) and 600 kHz (Y option). Frequency • Low R (DS) DMOS FET The use of SOT-23 package, made possible by the minimal power loss of the internal 1.8-A switch, and • Switch Current Up to 1.8 A use of small inductors
in „[V] 13St. LM2731 0.6/1.6-MHz Boost Converters With 22-V Internal FET Switch in SOT-23 (15€)“ · Markt ·
-
PDF
irlb3034pbf-Datasheet.pdf
g GS C iss Input Capacitance ––– 10315 ––– VGS = 0V C Output Capacitance ––– 1980 ––– V = 25V oss DS C rss Reverse Transfer Capacitance ––– 935 ––– pF ƒ = 1.0MHz C eff. (ER) ––– 2378 ––– V = 0V, V = 0V to 32V i oss Effective Output Capacitance (Energy Related)i GS DS C osseff. (TR)Effective Output Capacitance
-
PDF
IRLB3034PbF.pdf
g GS C iss Input Capacitance ––– 10315 ––– VGS = 0V C Output Capacitance ––– 1980 ––– V = 25V oss DS C rss Reverse Transfer Capacitance ––– 935 ––– pF ƒ = 1.0MHz C eff. (ER) ––– 2378 ––– V = 0V, V = 0V to 32V i oss Effective Output Capacitance (Energy Related)i GS DS C osseff. (TR)Effective Output Capacitance
in „Aufwärtsschaltregler bauen“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
IRLB3034.pdf
g GS C iss Input Capacitance ––– 10315 ––– VGS = 0V C Output Capacitance ––– 1980 ––– V = 25V oss DS C rss Reverse Transfer Capacitance ––– 935 ––– pF ƒ = 1.0MHz C eff. (ER) ––– 2378 ––– V = 0V, V = 0V to 32V i oss Effective Output Capacitance (Energy Related)i GS DS C osseff. (TR)Effective Output Capacitance
in „Logic Level Mosfet - Welcher "kann mehr"“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
MCP73811_2.pdf
FIGURE 2-18: Complete Charge Cycle (1000 mAh Li-Ion Battery). 2005-2013 Microchip Technology Inc. DS20001984F-page 9 MCP73831/2 NOTES: DS20001984F-page 10 2005-2013 Microchip Technology Inc. MCP73831/2 3.0 PIN DESCRIPTION The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION
in „Hackbarer(?) 21 EUR Quadcopter“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
MCP_73831.pdf
FIGURE 2-18: Complete Charge Cycle (1000 mAh Li-Ion Battery). 2005-2013 Microchip Technology Inc. DS20001984F-page 9 MCP73831/2 NOTES: DS20001984F-page 10 2005-2013 Microchip Technology Inc. MCP73831/2 3.0 PIN DESCRIPTION The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION
in „LiPo-IC MCP73831 kennt keine Ladeschlussspannung“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
MCP41HVX1.pdf
to Mechanical Potentiometers DS00219 — Digital Potentiometer Design Guide DS22017 — Signal Chain Design Guide DS21825 — Analog Solutions for Automotive Applications Design Guide DS01005 2013 Microchip Technology Inc. DS20005207A-page
in „MCP41HVX READCMD falsch verstanden??“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
MRF150.pdf
Zero Gate Voltage Drain CurrDSt= 50 V,GS = 0) DSS — — 5.0 mAdc Gate–Body Leakage CurrentGSV= 20 V, DS = 0) GSS — — 1.0 Adc ON CHARACTERISTICS Gate Threshold Voltage (= 10 V, I = 100 mA) V 1.0 3.0 5.0 Vdc DS D GS(th) Drain–Source On–Voltage (V= 10 V, I = 10 A) V 1.0 3.0 5.0 Vdc GS D DS(on) Forward Transconductance (V= 10 V, I = 5.0 A) g 4.0 7.0 — mhos DS D fs DYNAMIC CHARACTERISTICS Input CapacitanceDSV= 50 V,GS = 0, f = 1.0 MHz) Ciss — 400 — pF Output CapacitanceDSV= 50 V,GS = 0, f = 1.0 MHz) Coss — 240 — pF Reverse Transfer CapacitancDS(= 50 V,GS =
in „Wärmeleitpad gesucht für POWER FET MRF150“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
aod522.pdf
0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics 600 0.030 TC= 25 °C 500 0.025 ) ) ( ( e TC= 125 °C c n 400 n 0.2 0 t s u s n 300 R 0.05 c n VGS = 4.5 V n O r T C - 55 °C –) T 200 (0.010 VGS = 10V
in „Suche einfache Möglichkeit 24V 6A DC zu schalten“ · Analoge Elektronik und Schaltungstechnik ·
-
Bild
Screenshot der SDRangel Software mit Spektrum und Video-Stream
SDRangel RTL-SDR CF: 741.400M SP: 2.600M 2600k LO ppm Auto DC IQ Bias Fp Cen Dec SR 2,600,000 S/s L DS RFBW 1,000 kHz 37.2 AGC Time Delay 0.0s Now +5s -5s SDR Settings DATV Demodulator BW 02,250,000 Hz -5.2 dB Video DATV PID: 257 - Width:
in „LNB zweckentfremden?“ · HF, Funk und Felder · · Screenshots
-
PDF
irlml2502.pdf
= 4.0A fs DS D ––– ––– 1.0 VDS= 16V, VGS= 0V IDSS Drain-to-Source Leakage Current ––– ––– 25 µA V = 16V, V = 0V, T = 70°C DS GS J Gate-to-Source Forward Leakage ––– ––– -100 VGS= -12V GSS Gate-to-Source Reverse Leakage
in „suche Transistor 5V 2A“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
MCP794xx.pdf
Note 1) — — 300 ns 2.5V ≤ VCC≤ 5.5V 6 T HDSTA Start Condition Hold Time 4000 — — ns 1.8V ≤ VCC< 2.5V 600 — — ns 2.5V ≤ VCC≤ 5.5V 7 TSUSTA Start Condition Setup Time 4700 — — ns 1.8V ≤ VCC< 2.5V 600 — — ns 2.5V ≤ VCC≤ 5.5V 8 T HDDAT Data Input Hold Time 0 — — ns Note 2 9 SU DAT Data Input Setup Time 250
in „MCP794xx EUI-64 Node Adresse“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
mcp3424.pdf
THD:STA 600 — — ns After this period, the first clock pulse is generated START (Repeated) condition TSU:STA 600 — — ns setup time Data hold time THD:DAT 0 — 900 ns (Note 4) Data input setup time TSU:DAT 100 — —
in „Sensorplatine MPX4115 DS1621 HIH5030 - Schaltungskontrolle“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
Samsung_64MB_K4M51323PC_1_8V.pdf
Extended MRS Address BA1 BA0 A12 ~ A10/AP A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Function Mode Select RFU *1 DS RFU *1 PASR EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength) Mode Select Driver Strength PASR *4 BA1 BA0 Mode A6 A5 Driver Strength A2 A1 A0 # of Banks 0 0 Normal MRS 0 0 Full 0 0 0 Full
in „PHILIPS VP5500 VoIP Telefon bei Pollin“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
MPLINK_TUTORIAL.pdf
nop nop decfsz LSB,1 goto dly1 decfsz MSB,1 goto dly1 return end 1998 Microchip Technology Inc. DS51185A-page 47 MPLINK Tutorial NOTES: DS51185A-page 48 1998 Microchip Technology Inc. Chapter 6. Sample Application 4 NOTES: 1998 Microchip Technology Inc. DS51185A-page 49 MPLINK Tutorial NOTES: DS51185A-page 50 1998 Microchip Technology Inc. Chapter 6. Sample Application 4 NOTES: 1998 Microchip Technology Inc. DS51185A-page 51 M W ORLDWIDE S ALES AND S ERVICE AMERICAS AMERICAS (continued)
in „Anfängerfrage zu Assembler“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
irlml6401.pdf
On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 I = VGS = 0V, f = 1 MHZ D -4.3A Ciss = gs+ Cgd C ds SHORTED ) V DS =-10V 1000 C = C ( rss gd e 8 Coss = Cds Cgd a F Ciss o ( 800 V c e 6 n r i 600 o a - a t 4 C t C 400 a Coss , Crss S 200 G 2 - 0 0 1 10 100 0 4 8 12 16 V , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A t e )100 r ( u 10 n n TJ= 150 C e 10us
in „CMOS Transistoren“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
DMG1024UV.pdf
(Note 5) Gate Threshold Voltage VGS(th) 0.5 - 1.0 V VDS = VGS, D = 250μA 0.3 0.45 VGS = 4.5V, D = 600mA T 0.4 0.6 VGS = 2.5V, D = 500mA C Static Drain-Source On-Resistance R DS (ON) - 0.5 0.75 Ω VGS = 1.8V, D = 350mA U - 9 VGS = 1.7V, D = 140mA D - 10 VGS = 1.5V, D = 100mA O Forward Transfer Admittance
in „MOSFET Ersatztypen für DMG1024 u. DMG1023 gesucht“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
IRLML6401.pdf
On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 I = VGS = 0V, f = 1 MHZ D -4.3A Ciss = gs+ Cgd C ds SHORTED ) V DS =-10V 1000 C = C ( rss gd e 8 Coss = Cds Cgd a F Ciss o ( 800 V c e 6 n r i 600 o a - a t 4 C t C 400 a Coss , Crss S 200 G 2 - 0 0 1 10 100 0 4 8 12 16 V , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A t e )100 r ( u 10 n n TJ= 150 C e 10us
in „parasitäres Glimmen beim LED-Muxing. Transistoren? Einstreuungen?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRLML6401.pdf
On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 I = VGS = 0V, f = 1 MHZ D -4.3A Ciss = gs+ Cgd C ds SHORTED ) V DS =-10V 1000 C = C ( rss gd e 8 Coss = Cds Cgd a F Ciss o ( 800 V c e 6 n r i 600 o a - a t 4 C t C 400 a Coss , Crss S 200 G 2 - 0 0 1 10 100 0 4 8 12 16 V , Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A t e )100 r ( u 10 n n TJ= 150 C e 10us
in „LED Multiplexer glimmt“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
NTMFS4C09N.pdf
ISS Output Capacitance C 610 OSS VGS = 0 V, f = 1 MHz,DS= 15 V pF Reverse Transfer Capacitance C 126 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.101 RSS ISS GS DS Total Gate Charge Q 10.9 G(TOT) Threshold Gate Charge Q 1.9 G(TH) Gate−to−Source Charge Q 3.4 nC GS VGS = 4.5 V, DS = 15 V;DI = 30 A Gate−to−Drain Charge Q 5.4 GD Gate Plateau Voltage V 3.1 V GP Total Gate Charge Q V = 10 V, V = 15 V; I = 30 A 22.2 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay
in „Kontrolle Eagle Schaltplan“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
L6206.pdf
15 20 25 30 VS [V] V [V] S Figure 26. Normalized typical quiescent current Figure 27. Normalized R DS(ON) vs.junction vs. switching frequency temperature (typical value) Iq / (Iq @ 1 kHz) RDS(ON)/ (DS(ON) 25 °C) 1.7 1.8 1.6 1.6 1.5 1.4 1.4 1.3 1.2 1.2 1.1 1.0 1.0 0.8 0.9 0 20 40 60 80 100 120 140 0 20 40 60 80 100 f [kHz] Tj [°C] SW Figure 28. Typical low-side R DS(ON) vs. supply Figure 29. Typical drain-source diode forward voltage ON characteristic R DS(ON) ] ISD[A] 0.300 3.0 Tj= 25 °C 0.296 T = 25 °C 2.5 j 0.292 2.0 0.288 1.5 0.284 1.0 0.280 0.5 0.276 0.0 0
in „l6206 Datenblatt Fehler?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
stgw60h65dfb.pdf
2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 4.30 P 3.50 3.60 3.70 Q 5.60 6.00 S 6.05 6.15 6.25 DS9535 - Rev 8 page 15/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB TO-3P package information 4.3 TO-3P package information Figure 33. TO-3P package outline 8045950_3 DS9535 - Rev 8 page 16/21 STGW60H65DFB
in „PV Wechselrichter startet nicht mehr und verursacht Kurzschluss bzw. hohen Strom“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
datasheet.pdf
On-State Resistance (VGS = 10V, 0.5D[Cont.] 0.011 Ohms Zero Gate Voltage Drain Current (= V , V = 0V) I DS DSS GS 250 A DSS Zero Gate Voltage Drain Current (= 0.8 V , V = 0V, T = 125°C) 1000 DS DSS GS C GSS Gate-Source Leakage Current (GS= ±30V, VDS = 0V) ±100 nA VGS(th) Gate Threshold Voltage DS = VGS, D
-
PDF
MCP738312.pdf
FIGURE 2-18: Complete Charge Cycle (1000 mAh Li-Ion Battery). 2005-2014 Microchip Technology Inc. DS20001984G-page 9 MCP73831/2 NOTES: DS20001984G-page 10 2005-2014 Microchip Technology Inc. MCP73831/2 3.0 PIN DESCRIPTION The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION
in „MCP73832 Beschaltung für die Auswertung mit µC“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
DS1337-DS1337C_1_.pdf
mils) DS1337 DS1337U -40°C to +85°C 8 µSOP 1337 DS1337U+ -40°C to +85°C 8 µSOP 1337 DS1337C -40°C to +85°C 16 SO (300 mils)DS1337C DS1337C# -40°C to +85°C 16 SO (300 mils)DS1337C + Denotes a lead-free/RoHS-compliant
in „Datum & Uhrzeit AVR“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
DS1337-DS1337C.pdf
+85°C 8 SO (150 mils) DS1337 DS1337S+ -40°C to +85°C 8 SO (150 mils) DS1337 Modem) DS1337U -40°C to +85°C 8 µSOP 1337 DS1337U+ -40°C to +85°C 8 µSOP 1337 TYPICAL OPERATING CIRCUIT DS1337C -40°C to +85°C 16 SO (300 mils)DS1337C
-
PDF
J500.pdf
0.5 1.3 J502 0.344 0.43 0.516 1.50 7 1.10 0.6 1.5 J503 0.448 0.56 0.672 1.20 5 0.80 0.7 1.7 J504 0.600 0.75 0.900 0.80 3.5 0.55 0.8 1.9 J505 0.800 1.00 1.200 0.50 2. 0.40 0.9 2.1 J506 1.120 1.40 1.680 0.33 1.5 0.25 1.1 2.5 J507 1.440 1.80 2.160 0.20 1 0.19 1.3 2.8 J508 1.900 2.40 2.900 0.20 0.7 0.13 1.5 3.1 J509 2.400 3.00 3.600 0.15 0.5 0.09 1.7 3.5 J510 2.900 3.60 4.300 0.15 0.4 0.07 1.9 3.9 J511 3.800 4.70 5.600 0.12 0.3 0.05 2.1 4.2 Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 •
in „Welches elektronische Bauteil würdet ihr euch wünschen?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
irfh4210d_pbf.pdf
1mA BV DSS/TJ Breakdown Voltage Temp. Coefficient ––– 19 ––– mV/°C Reference to 25°C, ID= 10mA R DS(on) Static Drain-to-Source On-Resistance ––– 0.85 1.10 m VGS = 10V, D = 50A ––– 1.10 1.35 VGS = 4.5V,DI = 50A V Gate Threshold Voltage 1.1 1.6 2.1 V V = V , I = 100µA GS(th) DS GS D V GS(th) Gate
in „Akkubohrschrauber 10,8V von Makita und Metabo“ · Mechanik, Gehäuse, Werkzeug ·
-
PDF
H21A2.pdf
PULSED E .1 PW =100µsec IC .08 PRR =100pps .06 .04 .02 .01 1 2 4 6 8 10 20 40 60 80100 200 400 600 1000 I ,INPUTCURRENT(mA) F Figure 2. Output Current vs. Temperature 10 8 NORMALIZEDTO VCE =5V, IF=20mA, T A25°C INPUTPULSED 6 I =100mA F N 4 R IF=60mA R C T P 2 T F =30mA O D I 1 F =20mA A M .8 R N
in „Gabellichtschranke“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
8205.pdf
the Dual N-Channel logic TSSOP8 Package enhancement mode power field effect transistor 20V / 6.0A, DS(ON)=20mΩ(typ.)@V GS = 4.5V which is produced using high cell density. 20V / 5.2A, DS(ON)=27mΩ(typ.)@V GS = 2.5V Advanced trench technology to provide excellent SOT-26 Package R DS(ON) 20V / 6.0A, DS(ON)=22mΩ(typ.)@V GS = 4.5V 20V / 5.2A, DS(ON)=25mΩ(typ.)@V GS = 2.5V This high density process is especially tailored o Super high density cell design for extremely minimize on-state resistance. These devices are low RDS(ON) particularly suited
in „Unbekannter IC "IP9001"“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
GSMParkHeatingControl.pdf
0 6 0 6 0 C µ T100 SH_ON/OFF +12V D403 1 C 1 C 1 1 100nF 1K IC400 +4V_SW BCW66 R106 k IRLML6401 IC600 Lüften/Heizen b P6KE6V8CA C408 680 i uN d / D402 R4032 VL Vcc U600 + V G F o I/O VL1 I/O Vcc1 CS DAT2 100nF SD_CS I/O Vcc2I/O VL2 DI GND DS1820(TO92) Themperatur (2xx) LM2576S-ADJ LL4148 47K I/O VL3 I/O Vcc3 VSS1 WP DS1820(TO92) LP2950CDT R403 SD_DI I/O Vcc4I/O VL4 VDD CD +4V_ON/OFF I/O VL5 I/O Vcc5 CLK/SCLK GND D D L400 p L401 1K SD_CLK I/O Vcc6I/O VL6 VSS2 GND NQ D G D V 9 0 In N Out +3,3V I/O VL7 I/O Vcc7 DO GND
in „Bitte um Überprüfung: GSM Steuerung mit GPS“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
GSMParkHeatingControl_V1.1.pdf
5k6 1k8 1k8 T401 6 n 6 µ T100 SH_ON/OFF D403 C 1 C 0 1K +12V IC400 +4V_SW 1 BCW66 100nF IRLML6401 IC600 R106 a OE GND Lüften/Heizen i uD d / P6KE6V8CA C408 I/O VL8 I/O Vcc8 U600 680 + V G F O D402 R4032 SD_CS I/O Vcc7 I/O VL7 CS DAT2 I/O VL6 I/O Vcc6 DI GND Themperatur (2xx) LM2576-ADJ LL4148 100nF 47K SD_DI I/O Vcc5 I/O VL5 VSS1 WP DS1820(TO92) DS1820(TO92) R403 I/O VL4 I/O Vcc4 VDD CD LP2950CDT +4V_ON/OFF SD_CLK I/O Vcc3 I/O VL3 CLK/SCLK GND L400 F L401 K400 1K I/O VL2 I/O Vcc2 VSS2 GND N Q D N Q D p In N Out +3,3V SD_DO I/O Vcc1
in „Bitte um Überprüfung: GSM Steuerung mit GPS“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
Gath_-_Triacs_und_Diacs_in_Theorie_und_Praxis.pdf
15 150 3 TAG 221-800 6 8 4E50-28 50±4 14...45 150 TAG 222-800 6 8 4E100-8 100±10 1... 15 150 TAG 96-600 4 8 4E200-828 200±20 11... 15 150 TAG 97-600 4 9 4E200-28 200±20 14...45 150 TAG 98-600 4 9 TAG 205-600 2,5 2 4Ex580 15...10 8 150 Z) TAG 206-600 2,5 2 4Ex581 25...35 8 150 H 4Ex582 35...45 8 150 1N5158
in „hysteresefreie Phasenanschnittsteuerung“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
IRF3205Z.pdf
Capacitance ––– 310 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1940 ––– V = 0V, V = 1.0V, ƒ = 1.0MHz GS DS Coss Output Capacitance ––– 430 ––– VGS= 0V, V DS= 44V, ƒ = 1.0MHz Cosseff. Effective Output Capacitance ––– 640 ––– VGS= 0V, VDS= 0V to 44V f Source-Drain Ratings and Characteristics Parameter Min.
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
lt1157.pdf
possible to switch either supply or ground 3 Microamps Standby Current reference loads through a low R DS(ON) N-channel switch 80 Microamps ON Current (N-channel switches are required at 3.3V because P- Drives Low Cost N-Channel Power MOSFETs channel MOSFETs do not have guaranteed R with DS(ON) No External
in „3V Gate-Treiber gesucht“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
20002234D.pdf
40°C to +85°C. OUT A A Parameters Sym. Min. Typ. Max. Units Conditions NMOS Switch On Resistance R DS(ON)N — 0.6 — VIN= 3.3V, SW = 100 mA PMOS Switch On Resistance R DS(ON)P — 0.9 — VIN= 3.3V, SW = 100 mA NMOS Peak Switch Current I 600 850 — mA Note 4 N(MAX) Limit VOUT Accuracy VOUT % -3 — +3 % Includes
in „NRF24L01+ durch MCP1640 gestört?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
FB180SA10.pdf
Package D l Easy to Use and Parallel V = 100V l Very Low On-Resistance DSS l Dynamic dv/dt Rating R DS(on) = 0.0065W l Fully Avalanche Rated G l Simple Drive Requirements ID= 180A l Low Drain to Case Capacitance S l Low Internal Inductance Description Fifth Generation, high current density HEXFETS are
in „Strom bis 200A schalten mit Power MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
