Test u-blox NEO-M9N Modul mitAntenneAA.162.301111 von Taoglas 1) Antenne auf Fensterbank Dachgaube, Ausrichtung WSW, relativ freie Sicht, out oft the box kurze Zeit bis zum ersten FIX (kleiner 1 min.). 2) Antenne auf
Abhängigkeit der Induktivität von der Position der Spule auf dem Ferritkern ELV RLC 9000 M ELV RLC 9000 M FLUKE 87 FLUKE 189 FLUKE 87 FLUKE 189 Messung von L mittels RLC 9000 M (von ELV 1993) A [mm] L [µH] fo [kHz] XL [Ohm] R serial R parallel [mVAC] [µAAC] R [Ohm] [mVAC] [µAAC] R [Ohm] Rs [Ohm] Q = XL/Rs Rp [Ohm] Q = XL/Rp >100 2.110 2.156 1.5 0.69 2173.91 -6 162.90 153.50 157.12 2.129 73.80 2.606 60.29 54.1 1.69 32011.83 Ferrit-Kern: L=50 D=8 -4 242.6 125.79 191.74 2.130 90.02 3.130 61.26 80.4 2.42 33223.14 Spule: L=12.5 d=8 (innen) D=9 (aussen) -2 340.6 106.16
Generic
Molline Ultramess C3
WAERME Total energy 72,508 MWh
WAERME Total volume 2934,33 m³
WAERME Current power 8508 W
WAERME Current flow 542 l/h
WAERME Flow temp 66 °C
WAERME Return temp 52 °C
WAERME Temp diff 13,69 °C
WAERME Maximum power 31,376 kW
WAERME Maximum flow 885 l/h
WAERME Seriennummer
toV Output Current per Channel, I OUT........................................................-1.0 mA to 5 mA Shaft Axial Play..............................................................................±0.25 mm (±0.010 in.) Shaft Eccentricity Plus Radial Play.......................................
PVC-isolierte Lamellen-Cu-Schienen Werkstoff: Cu-ETP blank/verzinnt schwarz isoliert, in Längen á 2 m Bestell-Nr. Technische Daten Cu Cu Querschnitt Cu-Lamellen Strombelastastung bei Temperatur am Leiter in ° Celsius Cu-Gewicht blank verzinnt mm 2 AnzahlxAbmessungmm 65° 75° 85° 95° 105° kg/% m 15650
VI DIS1 DISPLAYTECH162 V18 LCD DISPLAY 16x2 2 1 3 0 K K 1 . 1 . S D W 24V R4 R 2 R 2 V V V R R E D D D D D D D D A K C12 C11 D 2 1 2 3 4 5 6 7 8 91 1 1 1 1 1 1 N 1 3 MEGA8-P G A 1 23 M 1 . 1 . PC6(/RESET) PC0(ADC0) + V R
-- NCQ: enabled ------------------------------------------------------------------------------- S.M.A.R.T Attributes Status: S.M.A.R.T OK. ID Name Threshold Value Worst Status ------------------------------------------------------------------------------- 1 Raw Read Error Rate 51 200 200 OK 3 Spin
Mar Apr May Jun Jul Aug Sept Oct Nov Dec GN 2004 n p q r s t u v w x y z 2005 A B C D E F G H J K L M Voltage Code Capacitance Code 2006 N P Q R S T U V W X Y Z 2007 a b c d e f g h j k l m A & A2 Case Size B, B2 & D1 Case Size C & D Case Size Polarity Marking (anode) 2.5V marked 2, 6.3V marked 6 2.5V
) Internal high-accuracy voltage detection circuit • Overcharge detection voltage: 3.9 to 4.4 V (5 mV-step) Accuracy of ±25 mV(+25 °C) and ± 30 mV(−5 to +55 °C) • Overcharge release voltage: 3.8 to 4.4 V *1 Accuracy of ±50 mV • Overdischarge detection voltage: 2.0 to 3.0 V (*20 mV-step) Accuracy of ±80 mV • Overdischarge release voltage: 2.0 to 3.4 V Accuracy of ±100 mV • Overcurrent 1 detection voltage: 0.05 to 0.3 V (5 mV-step) Accuracy of ±20 mV • Overcurrent 2 detection voltage: 0.5 V (fixed) Accuracy
) Internal high-accuracy voltage detection circuit • Overcharge detection voltage: 3.9 to 4.4 V (5 mV-step) Accuracy of ±25 mV(+25 °C) and ± 30 mV(−5 to +55 °C) • Overcharge release voltage: 3.8 to 4.4 V *1 Accuracy of ±50 mV • Overdischarge detection voltage: 2.0 to 3.0 V (*20 mV-step) Accuracy of ±80 mV • Overdischarge release voltage: 2.0 to 3.4 V Accuracy of ±100 mV • Overcurrent 1 detection voltage: 0.05 to 0.3 V (5 mV-step) Accuracy of ±20 mV • Overcurrent 2 detection voltage: 0.5 V (fixed) Accuracy
) Internal high-accuracy voltage detection circuit • Overcharge detection voltage: 3.9 to 4.4 V (5 mV-step) Accuracy of ±25 mV(+25 °C) and ± 30 mV(−5 to +55 °C) • Overcharge release voltage: 3.8 to 4.4 V *1 Accuracy of ±50 mV • Overdischarge detection voltage: 2.0 to 3.0 V (*20 mV-step) Accuracy of ±80 mV • Overdischarge release voltage: 2.0 to 3.4 V Accuracy of ±100 mV • Overcurrent 1 detection voltage: 0.05 to 0.3 V (5 mV-step) Accuracy of ±20 mV • Overcurrent 2 detection voltage: 0.5 V (fixed) Accuracy
Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage V (BR)DSS 65 — — Vdc (VGS= 0,DI = 50 mA) Zero Gate Voltage Drain Current IDSS — — 2.5 mAdc (VDS= 28 V, GS= 0) Gate–Body Leakage Current IGSS — — 1.0 Adc (VGS= 20 V, DS= 0) NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic
DL3ER 1982/3 150 - 154 Miscellaneous A Simple Electronic Fuse Lothar Damrow, DC7EP 1982/3 155 - 157 2 m Band Dynamic Range of 2 m Transceivers, Part 4 : Modifications to the FT221 L Asbrink, SM5BSZ 1982/3 158 - 162 Fundamentals The Optimum IF Selectivity for Coherent Telegraphy (CCW) Bernd Neubig, DK1AG
DF !er P OW P OW uN uyN tbStrombelastbarkeit bei fester Verlegung in und an Gebäuden tob lk li ww C m w C m wdoc uac Dauerbetrieb w.doc ac.c u-t u-r Umgebungstemperatur 25 °C Für Kupferleiter mit PVC-Isolierung. Betriebstemperatur der PVC-Isolierung 70 °C. Zuordnung des Bemessungsstromes I von Überstrom-Schutzeinrichtungen
C 1K5 4K7 1 1 R28 2K R21 1K8 C CN2 J2 S SELECT E E 1 7U K F K E R88 91K KM I R P CN5 J5 R11001R/100M +1V2 n DAB-L 6 6 V 0 2 8 1 1 1 6 DAB-R 5 5 F 4 4 0 3 2 1 +3V3 2 7 C C C 3 3 2 1 VOL_L VR1 C R103 2 2 F VOL_R 1 1 DAB-L P P n 501R/100M C211 2.2uF FS_V1 6 1 0 DAB/FM_MODULE 1 220uF/10V DAB-R 9 8 6 C57
Polar TM HiPerFET TM IXFB100N50P V = 500V DSS Power MOSFET I = 100A D25 R DS(on) 49m t rr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier PLUS264 TM Symbol Test Conditions Maximum Ratings V T = 25C to 150C 500 V DSS J G VDGR TJ= 25C to 150C, R GS = 1M
ISOLATION LO-IF ISOLATION IP3 Outline Drawing (MHz) (dB) (dB) (dB) at center band Mid-Band (dBm) LO/RF IF m Total L M U L M U — Range L-U X σ Max. Max. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. 0.5-500 DC-500 5.0 0.10 6.5 7.8 70 50 55 35 45 30 65 45 40 25 30 20 15 1 dB COMP.: +1 dBm typ. L = low rangL [f toL10 ]M = mid range [1L f Uo f /U = upper rangU [f /U to f ] m= mid band [Lf tU f /2] Typical Performance Data PCB Land Pattern Frequency Conversion Isolation Isolation VSWR VSWR (MHz) Loss L-R L-I RF Port LO
ISOLATION LO-IF ISOLATION IP3 Outline Drawing (MHz) (dB) (dB) (dB) at center band Mid-Band (dBm) LO/RF IF m Total L M U L M U — Range L-U X σ Max. Max. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. 0.5-500 DC-500 5.0 0.10 6.5 7.8 70 50 55 35 45 30 65 45 40 25 30 20 15 1 dB COMP.: +1 dBm typ. L = low rangL [f toL10 ]M = mid range [1L f Uo f /U = upper rangU [f /U to f ] m= mid band [Lf tU f /2] Typical Performance Data PCB Land Pattern Frequency Conversion Isolation Isolation VSWR VSWR (MHz) Loss L-R L-I RF Port LO
k R168 1 1 R32 R16 2 6 R173 CGND AGND - k 0E R180 1 E AGND R151 1 GN +15VB C LD7 R172 AGND + 7 22k M5 B T1 A06 339 C92 AGND +15V E 1 IC16-B + 5 2 k E C C42 E R169 2R153 1 R162 C 10/50 6 2 339 V B T23 - 0E IC16-A 5 X7 A06 R152 1n + 4 0E R182 +5VDC 1 E - LD3 D 100 AM R174 7 R171 0 0 2E M6 DGND 2 VR3-B
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Current 1.25 A (AC) or 2 A (DC) Min. applicable Plasticseale1 mA 5 VDC 1 mA 1 VDC 1 mA 1 VDC 0.1 mA 0.1 VDC load* (Reference) Fluxfree 5 mA T VDC 1 mA 5 VDC 1 mA 5 VDC 1 mA 1 VDC Coil Nominal Power (at 20°C) Approximately 0.5 W to 0.58 W (standard), approximately
D i e g a n z e W e l t d e r B a u e l e m e n t e Liquid Crystal Displays LCD – Module und Gläser Beck GmbH & Co. Elektronik Bauelemente KG · Eltersdorfer Str. 7 · 90425 Nürnberg · Tel.: 0911/93408-0 · Fax: 0911/93408-28 D i e g a n z e W e
+ R159 R160 R161 R162 R167 w 4 4 GND DRIVER AFC w 5 5 PB3 M R122 C104 UNSW 5V A 5.0 4k7 22k 5.0 4k7 22k 1k5 w 6. 6 PB5 E O 10k 1 50V R120 12.0102 4.8 PAL 5V A SW 7 s 7e PB4 L N 1/4W 10k VT 4.9 4.4 Q1564.9 4.4 TV/SAT 8 8
$regfile = "m162def.dat" $crystal = 8000000 Baud = 9600 Dim Ctr As Byte Dim Command As Byte Sck Alias Porta.3 Dataout Alias Porta.0 Datain Alias Pina.0 Declare Sub Getit() Set Dataout For Ctr = 1 To 12 Set Sck Waitus
TSIC206-Temperatursensor +5V C9 C10 ) 1 LCD 1 GND 100n 100µ . ( s LCD162A LED 1 D t W 16 s D o S / 0 1 2 3 4 5 6 7 V V K R R E D D D D D D D D 04 1 R SENSOR TSIC206 Programmieradapter 1 5 100n k 1 2 2 2 2 2 2 2 2 2 1 1 1 1 1 r ) ) ) ) ) ) ) ) ) ) ) ) ) ) a C C C C C C 1 0 D FE C B B B B B - ( ( ( ( ( ( G R V C ( ( ( ( ( i ( ( ( m ATmega8-16 IC1 o ) ) ) ) ) ) ) ) ) ) 5 6 7 ) - 6 0 1 2 3 4 C N 6 B D D D B 0 I P DPD DPD P C P P V G P B ( ( ( ( ( P 0 3 ( ( ( ( ( ( ( ( ( 0 1 2 3 4 1 R 1 2 3 4 5 6 7 8 9 1 1 1 1 1 D D D r T L L L C2
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