document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc CASE 29–04, STYLE 17 TO–92 (TO–226AA) Collector–Base Voltage VCBO
document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc CASE 29–04, STYLE 17 TO–92 (TO–226AA) Collector–Base Voltage VCBO
unless otherwise specified. Parameter Symbol Value Unit Collector-Emitter Voltage BC337 VCES 50 V BC338 30 Collector-Emitter Voltage BC337 VCEO 45 V BC338 25 Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Peak Collector Current ICM 1 A Base Current IB 100 mA (1) Power Dissipation atamb = 25
unless otherwise specified. Parameter Symbol Value Unit Collector-Emitter Voltage BC337 VCES 50 V BC338 30 Collector-Emitter Voltage BC337 VCEO 45 V BC338 25 Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Peak Collector Current ICM 1 A Base Current IB 100 mA (1) Power Dissipation atamb = 25
BC337 ... BC338 BC337 ... BC338 I C = 800 mA VCEO = 25...45 V h FE = 160/250/400 Ptot = 625 mW General Purpose NPN Transistors Universal-NPN-Transistoren T jmax= 150°C Version 2017-02-09 TO-92 (10D3) Typical Applications
LED1 LED2 LED3 LED4 LED5 LED6 10k 9 R17 0 2 0 1 0 R t a M - o-sei G 10k 1 R 1 R 1 R13 1. 1.r eV 10k BC338 BC338 R23 BC338 BC338 BC338 BC338 hcsi ni eR. J K6 K3 K5 K2 K4 K1 Q3 Q7 Q2 Q6 Q1 Q5 - - - - - - 1 1 1 1 1 1 T T T T T T 1 B B B B B B F 1 2 1 2 1 2 1 2 1 2 1 2 1 2 X1 X7 X3 X6 X2 X5 X4 Stromversorgung
BC328 UNITS BC337 BC337A BC338 Collector Emitter Voltage V CEO 45 60 25 V Collector Emitter Voltage VCES 50 60 30 V Emitter Base Voltage V EBO 5.0 V Collector Current Continuous C 800 mA Peak I 1.0 A CM Emitter Current Peak IE M
unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage CES : BC337 50 V : BC338 30 V V Collector-Emitter Voltage CEO : BC337 45 V : BC338 25 V V Emitter-Base Voltage 5 V EBO C Collector Current (DC) 800 mA P Collector Power Dissipation 625 mW C TJ Junction Temperature 150 °C T
unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage CES : BC337 50 V : BC338 30 V V Collector-Emitter Voltage CEO : BC337 45 V : BC338 25 V V Emitter-Base Voltage 5 V EBO C Collector Current (DC) 800 mA P Collector Power Dissipation 625 mW C TJ Junction Temperature 150 °C T
Symbol Parameter Conditions Min. Typ. Max. Unit
BVCEO Collector-Emitter Breakdown Voltage BC337 45 V
BC338 25 V
BVCEs Collector-Emitter Breakdown Voltage BC337 IC = 10 mA, IB = 0 50 V
BC338 IC = 0.1 mA, VBE = 0 30 V
BVCEO Emitter-Base Breakdown Voltage IE = 0.1 mA, IC = 0 5 V
ICES Collector Cut-Off Current BC337 VCE = 45 V, IB = 0 100 nA
BC338 VCE = 25 V, IB = 0 100 nA
hFE1 DC Current Gain VCE = 1 V, IC = 100 mA 630
hFE2 VCE = 1 V, IC = 300 mA 60
VCE(sat) Collector-Emitter Saturation Voltage IC = 500 mA, IB = 50 μA 0.7 V
VBE(on) Base-Emitter
Q3 Opto-Transistor S2B S2A 10 uF / 25V Q2 BC558-B H1 5 V / 90 mA 3,3 k R5 1 k R6 660 k R4 910 k Q1 BC338-25 *) Note: References are arbitrary Q1: Q2 TO-92 BC338-25; BC558-B C B E Q3 Opto Transistor C E nissen 931013 Title Author File Document Schaltpläne Baustellenleuchten Nissen_001.dsn Revision Date
1 R14 T T T T O O O O 1K _ _ _ _ E E E E L L L L +5V LED +5V R3 IC4 IC1 R8 T1 PC6 PC5 PD0 PC4 1K BC338/40 10K IN DOUT PC3 Sound G PD1 PC2 Trigger_blocked 4 0 PD2 PC1 R 1 F LM7805 F F + 5 PD3 +5V 0 0 0 C C1 PD4 PC0 3 0 4 0 1 VCC GND C 1 C 1 GND AREF PB6 AVCC TSOP1736 IC2 100nF PB7 PB5 PD5 PB4 PD6 PB3
# Header ###### Header Alles in einer Zeile **Fett** *Kursiv* `Blocktext` 5 x 220kΩ 3 · 470µF 1 * BC338 2 x 1N4148 1. N 2. R 3. C 4. Z 5. Q Zeile Alles 24,3
8 8 6 6 A A D S D SF Transistor / 5 V Mosfet / 12 V 6,3A V 3K9 R150 3 F1 2 P A IRFP460 G G M s C BC338-25 0 0 L L ( 1 1 N 5 R120 SFH620A-3 2 F 4 F D 1 5 D S D S P 2 4 GND_1 GND_2
51 R R7 5,3k R5 1k LED D0 orange 5 mm ultra-bright LED D1 orange 5 mm ultra-bright 660k R4 910k R3 BC338-26 Q1 BC558-B Q2 Opto-Transistor Q3 nissen 931013 LED Version Title Baustellenleuchte - Nissen Author File Schaltplan\BaustellenleuchtenNissen_003.dsn Revision 1.0 Date 08.08.2007 Sheets 1 of 1
22k r r 2 2 R10 V V 2 R C k IC1 V 1k 5 R 1 + 1 +I1 VCC 12 D4R4 E 1kGND e Q1 R 0k1 S 2 -I1 VREF 14 V BC338ZPD 18 R1 A R5 JP5 6 k 16 +I2 OUTC 13 Q3 1 R 1 15 8 BA157 SUP75P05-08 E GND -I2 C1 D2 L1 JP3 8k S I mess 3 9 1 2 1 R1 f COMP E1 200µ min 16A s 0 1 A r 4 11 D3 e 1 R C3 C V DTC C2 + C4 I JP4 P 1 V C1
f f 22k r r 2 2 R10 V V 2 R C k IC1 V 1k 5 R 1 Q1 3 + 1 +I1 VCC 12 BC338 RD E 1kGND e 4 R 0k1 S 2 -I1 VREF 14 V 4 R1 A R5 1 N JP5 6 k 16 +I2 OUTC 13 2DD 1 Q3 1 R 1 15 8 D $Z 100 SUP75P05-08 E GND -I2 C1 N L1 JP3 8k S I mess 3 9 R11 1 2 1 R1 f COMP E1 200µ min 16A s 0 1
f f 22k r r 2 2 R10 V V 2 R C k IC1 V 1k 5 R 1 Q1 3 + 1 +I1 VCC 12 BC338 RD E 1kGND e 4 R 0k1 S 2 -I1 VREF 14 V 4 R1 A R5 1 N JP5 6 k 16 +I2 OUTC 13 2DD 1 Q3 1 R 1 15 8 D $Z 100 SUP75P05-08 E GND -I2 C1 N L1 JP3 8k S I mess 3 9 R11 1 2 1 R1 f COMP E1 200µ min 16A s 0 1
f f 22k r r V V k R R10 C 7 2 C 5 V 3 k IC1 V 1k 5 R 1 Q1 D + 1 +I1 VCC 12 BC338R4 E 1kGND e 1 R 0k1 S 2 -I1 VREF 14 V 12 N R1 R5 DD 1 JP5 A k 16 +I2 OUTC 13 4 P Q3 1 6 0 D $ 100 SUP75P05-08 E GND R 1 15 -I2 C1 8 N JP3 k S R11 1 L1 2 1 20 I mess 3 COMP E1 9 R1 A f D3 200µ min 16A
R 1 I 4 C 4 S S S S C1 D1 R 1N4148 V 0.33µ 2 MOTOR2_A MOTOR2_B 2 F 1 V 5 1 5 6 5 N D Q 2 1 1. G L BC338 A R R _ 6 3 . 5. 1 1 1 1 A 0 C 5 R R 1 6 D6 D 6 D6 D _ K IC1 3 B 3 3 3 3 R10 O Q1 T 1 1 T S S S S T S C µ 4 R13 G O 0 6 0 0 0 1 R15 V J 4 R R 1 1 C A I 3 N I D R O 2 1 k P X DIGITALGEBER 2 MO_PROTECT_TB
SOT23 BC338-16 6F MMBF4860 Mot F SOT23 2N4860 n-ch jfet 6F BC818-25 Phi N SOT23 BC338-25 6Fs BC818-25 Sie N SOT23 BC338-25 6Fs BC818-25W Sie N SOT323 BC338-25 6F MUN2116 Mot N SOT23 pnp dtr R1 4k7 6F MUN5116 Mot N SOT323 MUN2116 6F Gali-6F MC AZ SOT89 DC-4GHz MMIC amp 12 dB gain 6FR BC818-25R Phi R SOT23R BC338-25 6FZ BC818-25 Zet N SOT23 BC338-25 6G BC818-40 Phi N SOT23 BC338-40 6Gs BC818-40 Sie N SOT23 BC338-40 6Gs BC818-40W Sie N SOT323 BC338-40 6G MMBF4393 Mot F SOT23 n-ch jfet 2N4393 6G MUN2130 Mot N
40, according to their ) DC current gain. As complementary types, the NPN 2 transistors BC327 and BC338 are recommended. ( 2 • On special request, these transistors are also . manufactured in the pin configuration TO-18. . i m Mechanical Data Case: TO-92 Plastic Package max.∅ Weight: approx. 0.18g 0.022
Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units V Collector-Emitter Voltage CES : BC327
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