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spp20n60s5_eng_tds.pdf
SPP20N60S5 Cool MOS™ Power Transistor V DS 600 V Feature R DS(on) 0.19 Ω • New revolutionary high voltage technology D 20 A • Worldwide best R in TO 220 DS(on) • Ultra low gate charge PG-TO220 2 • Periodic avalanche rated • Extreme dv/dt rated
in „Mosfet defekt - kann der Ersatztyp verwendet werden?“ · Analoge Elektronik und Schaltungstechnik ·
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MOSFET_TK6A60W_Toshiba_LIN.pdf
Max Unit Gate leakage current IGSS V GS= ±30 V, DS = 0 V ±1 µA Drain cut-off current IDSS V DS= 600 V, GS = 0 V 10 Drain-source breakdown voltage V I = 10 mA, V = 0 V 600 V (BR)DSS D GS Gate threshold voltage Vth V DS= 10 V,DI = 0.31 mA 2.7 3.7 Drain-source on-resistance RDS(ON) V GS=
in „Push/Pull in spannungsgeregelter Stromquelle / Frage zur Auslegung“ · Analoge Elektronik und Schaltungstechnik ·
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MOSFET_TK6A60W_Toshiba_LIN.pdf
Max Unit Gate leakage current IGSS V GS= ±30 V, DS = 0 V ±1 µA Drain cut-off current IDSS V DS= 600 V, GS = 0 V 10 Drain-source breakdown voltage V I = 10 mA, V = 0 V 600 V (BR)DSS D GS Gate threshold voltage Vth V DS= 10 V,DI = 0.31 mA 2.7 3.7 Drain-source on-resistance RDS(ON) V GS=
in „Push/Pull in spannungsgeregelter Stromquelle / Frage zur Auslegung“ · Analoge Elektronik und Schaltungstechnik ·
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DS_SJEP120R100_rev2.1.pdf
Figure 9. Typical Capacitance Figure 10. Gate Charge C = f(VDS; VGS= 0 V; f = 1 MHz Q g f(VGS; V DS= 600V; ID= 5A, Tj= 25 C 1.E+04 3.0 ) V 2.5 e F1.E+03 g ( l 2.0 e C iss o n V t1.E+02 c 1.5 c C oss u p C o a rss e 1.0 , a C1.E+01 G ,S G 0.5 V 1.E+00 0 300 600 900 1200 0.0 0 10 20 30 VDS Drain-Source
in „Siliziumkarbid-JFETS“ · Analoge Elektronik und Schaltungstechnik ·
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Article_Linear_Power_MOSFETs.pdf
, I = 0.3 A TO-264 under a strict dc operation condition DS D IXTN30N100L 1000 30 0.156 300 at V DS= 600 V,DI = 0.5 A SOT-227B such as 240 W at V DSuals 800 V, I D equals 0.3 A and T Cquals 90°C for Table1.Selectn-channelpowerMOSFETswithextendedFBSOA. IXTK22N100L. dopantconcentrationsandgate-oxide to
in „Stromsenke / el. Last“ · Analoge Elektronik und Schaltungstechnik ·
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irf3708.pdf
Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG 50KΩ VGS 12V .2µF .3µF + GS QGD D.U.T-DS 600 VG ) ID VGS J TOP 10A 3mA ( Charge y 20.7A IG D r 480 BOTTOM 24.8A Current Sampling Resistors n E e Fig 14a&b. Gate Charge Test Circuit c 360 and Waveform n a v A s 240 u P 15V l n 120 V(BR)DSS i tp
in „IRF3708 als Schalter“ · Mikrocontroller und Digitale Elektronik ·
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BUK100-50.pdf
Test circuit for resistive load switching times. V = f(T); conditions: I = 1 mA; V = 5 V IS(TO) j D DS 600 IISL & IIS / uA BUK100-50DL VIS / V & VDS / V BUK100-50DL 500 PROTECTION LATCHED VDS 400 10 IISL 300 RESET VIS IIS 5 200 100 NORMAL 0 0 0 2 4 6 0 100 200 300 400 VIS / V time / us Fig.14. Typical DC
in „MOSFET SCHMILZT“ · Analoge Elektronik und Schaltungstechnik ·
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catalog.pdf
Humidity Sensors [Desc]: DS7505 Series 3.7V Digital Thermometer and Thermostat - SOIC-8 Narrow MPN: DS600U+ [ID]: 000282 [Price]: 3.65 USD [QTY]: 4 [Category]: Temperature and Humidity Sensors [Desc]: DS600 Series 5.5 V 10 uA Surface Mount Analog Temperature Sensor - MICRO-8 Terminal Blocks MPN: 1752227
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catalog.pdf
Humidity Sensors [Desc]: DS7505 Series 3.7V Digital Thermometer and Thermostat - SOIC-8 Narrow MPN: DS600U+ [ID]: 000282 [Price]: 3.65 USD [QTY]: 4 [Category]: Temperature and Humidity Sensors [Desc]: DS600 Series 5.5 V 10 uA Surface Mount Analog Temperature Sensor - MICRO-8 Terminal Blocks Page 81/105
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catalog-3.pdf
Humidity Sensors [Desc]: DS7505 Series 3.7V Digital Thermometer and Thermostat - SOIC-8 Narrow MPN: DS600U+ [ID]: 000282 [Price]: 5.0297 USD [QTY]: 4 [Category]: Temperature and Humidity Sensors [Desc]: DS600 Series 5.5 V 10 uA Surface Mount Analog Temperature Sensor - MICRO-8 Terminal Blocks Page 81/105