PD - 95456 IRLIZ44NPbF ® HEXFET Power MOSFET l Logic-LevelGateDrive l Advanced Process Technology D l IsolatedPackage V DSS = 55V l HighVoltageIsolation=2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm R DS(on) = 0.022Ω l FullyAvalancheRated G l Lead-Free I = 30A D Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedizeddevicedesignthatHEXFETPowerMOSFETs arewellknownfor,providesthedesignerwithanextremely efficient and reliable
Mosfet Modellbau Servo IRLIZ 44N ATtiny 85 Pluspol Batterie - Reedkontakt WENN NICHT ANDERS DEFINIERT: OBERFLÄCHENGÜTE: ENTGRATEN BEMASSUNGEN SIND IN MILLIMETER UND SCHARFE ZEICHNUNG NICHT SKALIEREN ÄNDERUNG OBERFLÄCHENBESCHAFFENHEIT
IR IRLIZ34N 55 0.035 20 31 TO-220IS 2SK2385 A IR IRLIZ44G 60 0.028 30 48 TO-220IS 2SK2385 A IR IRLIZ44N 55 0.022 28 38 TO-220IS 2SK2312 A IR IRLL014 60 0.2 2.7 3.1 SOT-223 2SK2741 A IR IRLL014N 55 0.14 2 2.1 SOT-223 2SK2741 A IR IRLL110 100 0.54 1.5 3.1 SOT-223 2SK2742 A IR IRLL2705 55 0.04 5.2 2.1
IR IRLIZ34N 55 0.035 20 31 TO-220IS 2SK2385 A IR IRLIZ44G 60 0.028 30 48 TO-220IS 2SK2385 A IR IRLIZ44N 55 0.022 28 38 TO-220IS 2SK2312 A IR IRLL014 60 0.2 2.7 3.1 SOT-223 2SK2741 A IR IRLL014N 55 0.14 2 2.1 SOT-223 2SK2741 A IR IRLL110 100 0.54 1.5 3.1 SOT-223 2SK2742 A IR IRLL2705 55 0.04 5.2 2.1
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