over emphasized. VCC 47 0.1 Vin 6 + Vin + + – + + 5.7V + 7 R 2 g k k 1 0 D1 1 TL494 + 1N5819 or + TL594 4 5 k 0 1 3 Seriesgateresistorg maybeneededtodamphighfrequencyparasitic oscillations caused by the MOSFET input capacitance and any series wiring inductance in the gate–source circugt. R will decrease
Parasitic Oscillations VCC V 47 0.1 in 6 + Vin + ++ – + + 5.7V 7 R 2 g 0 k 1 0 D1 1 TL494 + or + 1N5819 TL594 5 4 0 1 3 SeriesgateresisgorR maybeneededtodamphighfrequencyparasitic oscillationscausedbytheMOSFETinput capacitanceandanyseries wiring inductance in the gate–sourcegcircuit. R will decrease the MOSFETswitchingspeed
Y many 22 LM5041 - 16 - - 16 I - • - • • - P - 9 15 t, 50% 3 0.75 1000 1.5 V 4 N Y many 23,14 w c TL594 16 16 - - - V na e - - - e P - 7 40 t, 45% 9 5.0 1 - 300 0.2 b 2 - 9, 12 24 SG3525 16 16 - - - V na • - - - - P - 8 40 t, 49% 14 5.10 0.1 - 400 0.2 Vc 2 many 24,25 LM5035 - 20 - - 24 V na • - • - •
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