TWO CHANNEL MEASUREMENT UNIT SPITZENBERGER EMU 300 TRANSDUCER SHUNT 1V max. 25V max. CURRENT 25V max. 10V max. 50Ω VOLTAGE ISO 16750-2 / ISO 21780 SUPERIMPOSED ALTERNATING VOLTAGE ISO 11452-8 MAGNETIC FIELD MEASUREMENT Measurement bandwidth DC ... 300 kHz Single frequency measurement Synchronisation
001 168520 N10149 OPTIONS 0 001 MS Oven 0 010 HS Oven 0 012 US Oven INPUTS Ext Arm Ref In 170 VA MAX 10 MHz Out To configure Hold Recall at power up. RS-232 MADE IN MALAYSIA 5131A SN:LMY40015 WARNING: For continued fire protection, use specified ~ line fuse.
3.25mm 4.0 x 4.3 x 3.25mm
Oscillation Frequency Typ. 320GHz Typ. 320GHz
Oscillation Output Max. 40µW Max. 10µW
Power Consumption Typ. 40mW Typ. 10mW
For sensing, imaging, and similar applications requiring high output and superior signal quality 2nd Generation
For applications requiring sufficient output
from 4 V Unom
Speed via PWM 1-10 kHz
Setting of values via temperature controller
100 % PWM -> n = @@@hl@@@max
10@@@endhl@@@ % PWM -> n = min
10 % PWM -> n = 10
Safe start-up at Unom -30 % from 40 % PWM
T<10 °C -> n = 0
T=45 °C -> n = max
UN +48 VDC
0-10 VDC
DU E
GND
RE > 100 K
Imax = 10 mA
47 V
DU E
GND1
No. Conn. Designation
max s Ramp-up Rate Δ T 150 °C max. 150 °C max. Peak Temperature Tp 250 °C - 260 °C 235 °C - 260 °C max. 10 seconds max. 10 seconds e Time of actual peak temperature p max. 5 seconds each wave max. 5 seconds each wave r t Ramp-down Rate, Min ~ 2 K/ second ~ 2 K/ second r T s max e T s typical Ramp-down
Centers Vertical Min. 17.78 (0.700) SwitchingVoltage Max. 24 V DC Terminals PC pins Switching Current Max. 10 mA DC Mounting Soldering, centering pins Carrying Current at 20°C 100 mA TotalTravel ≤ 3 (0.0018) (push-push version) Dielectric Strength SwitchingTravel 1.5 (0.0591) (50 Hz, 1 min) 500 V Operating
max s Ramp-up Rate Δ T 150 °C max. 150 °C max. Peak Temperature Tp 250 °C - 260 °C 235 °C - 260 °C max. 10 seconds max. 10 seconds e Time of actual peak temperature p max. 5 seconds each wave max. 5 seconds each wave r t Ramp-down Rate, Min ~ 2 K/ second ~ 2 K/ second r T s max e T s typical Ramp-down
105)V/≈60V) AC/DC 12 V / DC 250 5) AC 400 V 2.4 Grenzdauerstrom I mth. 10 A 16 A Schaltstrom min./max. 10 mA 7)/ 16 A (1 mA / 0,3 A)4) 0,3 A / 25 A 2) 2.5 Schaltleistung min./max. 4 VA / 2500 VA (1 mVA / 7 VA) 4) 4 VA / 4000 VA 6) 4) 6) Schaltleistung min./max. 35 ... 300 W (1mW / 7 W) 35 ... 500 W 2.6
VGT I - II - MAX. 1.3 V VD= V DRM RL= 3.3 kΩ V GD Tj= 125°C I - II - MIN. 0.2 V IH(2) IT= 100 mA MAX. 10 15 35 50 mA I - III 10 25 50 70 L IG= 1.2 GT MAX. mA II 15 30 60 80 V = 67 %V gate open T = 125°C dV/dt (2) D DRM j MIN. 20 40 400 1000 V/µs (dV/dt)c = 0.1 V/µT = 125°C 2.7 3.5 - - j (dI/dt)c (2)V
35,010 - 35,200 nur Flugmodelle 35,820 - 35,910 nur Flugmodelle 40,665 - 40,695 auch SRD allgemein (max. 10 mW ERP, Vfg. 30/2014) 1) 40,715 - 40,735 nicht für Flugmodelle 40,765 - 40,785 nicht für Flugmodelle 40,815 - 40,835 nicht für Flugmodelle 40,865 - 40,885 nicht für Flugmodelle 40,915 - 40,935 nicht
21900 50 500 6000 500 Als Ergebnis dieser Untersuchungen kann man fes- Prüfdauer bisher max. 15,3 J. max. 10 J. 8,75 J. 90 000 Std. 9 J. thalten, daß die Zuverlässigkeit von Tadiran Lithium Bat- mittl. 7,8 J. mittl. 5,5 J. terien im allgemeinen Ausfallraten von weniger als 200 fit (= 0,175% pro Jahr) entspricht
directional control valve 4 3 Rapid relief valve 4 4 Pneumtic spring bellows Operating pressure 4 max. 10 bar 4 9.4 Braking the rollers with a lifting beam The vehicle cannot be driven off the rollers or only with difficulty because the rollers are rotating, even though the lifting beam has been raised
tuning core as they does not implement core tuning. cod. SBK-50 useful space for the coil = 5,2 mm , max 10 turns , max wire Ø 0,3 mm, max inductance ~ 500 nH useful space for the coil = 5,7 mm , max 4,5 turns , cod. SBK-51 max wire Ø 0,6 mm, max inductance ~ 100 nH useful space price 0,45 € -- 0,40 € each
data to the register EEPDT (192h), the data will also be written to EEPROM. EEPROM writing requires max 10ms@V =3CC 2ms@V =CC. This Chip has a build-in EEPROM Time-out function for escaping write fail state. EEPROM writing needs V >CC5V. Before the writing of EEPROM is complete, the main program can still
2,54) .183 (4,65) Dia. ‘C” bore s Centers Typ. x w .08(2 places)eep w 0 2 - 5 (11,30)(7,62) .400 2 Max. (10,16) 0 .180 .135 8 (4,75) (3,43) : Max. Max. e A 504-AG11D a o .053 .003 L .110 (1,35 0,08) .510 .010 (15,24) d (2,79) (12,95 0,25) Max. t Min. u (0,51 0,08) .025 0 Sq. Typ. 2 - 8 FEATURES: PERFORMANCESPECIFICATIONS
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