60 V Gate-Source Leakage Current GSS V DSV, V GS=±20V ±100 nA Zero Gate Voltage Drain Current DSS V DS8V, V =GS 1 µA Gate-Threshold Voltage V V =V , I =250µA 2 4 V GS(th) DS GS D Drain-Source On-Resistance R DS(on) V GS0V, I D20A 5 6 mΩ Diode Characteristics Continuous Body Diode Current S 75 A Diode
G ID = 50µA I ,) ID = 250µA ( 1.0 ID = 1.0mA 20 S G V 0 0.5 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) TJ, Temperature ( °C ) Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature Case Temperature 10
noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V DS VGS = 0, D = 250 μA 60 - - V Gate-source threshold voltage V GS(th) VDS = VGS, D = 250 μA 2 3 3.5 Gate-source leakage I V = 0 V, V = ± 20 V - - ± 100 nA GSS DS GS V GS = 0 V V DS= 60 V - - 1 Zero gate
Supply Voltage RD to Output Data Valid vs. Supply Voltage A vs. Load Capacitance D 0 8 4 A D C 0 0 5 DS005671-38 DS005671-40 DS005671-39 fCLK vs. Clock Capacitor Full-Scale Error vs Effect of Unadjusted Offset Error Conversion Time vs. VREF/2 Voltage DS005671-41 DS005671-42 DS005671-43 Output Current vs
100000 100000 VGS 1.8V V GS1.5V VGS 1.2V T Pulsed Ta= 125°C T Pulsed Ta= 125°C T Pulsed Ta= 125°C A Ta= 75°C A Ta= 75°C A Ta= 75°C S ] T = 25°C S ] T = 25°C S ] T = 25°C N m a N m a N m a O n10000 Ta= - 25°C O n10000 Ta= - 25°C O )n0000 Ta= - 25°C E S E S E (S C D C R C RD R : R : R : O E O E O E - C - C
Threshold Voltage VGS(TH) V GS = VDS DI = 250µA 2.0 - 4.0 V Zero Gate Voltage Drain Current DSS V DS = Rated BVDSS , GS = 0V - - 25 µA V = 0.8 x Rated BV , V = 0V, T = 125 C - - 250 µA DS DSS GS J On-State Drain Current (Note 2) D(ON) V DS > D(ON) x DS(ON)MAX , VGS = 10V 14 - - A Gate to Source Leakage
35 ns 5 Output Hold from Address Change tOH 5 ns Write Cycle Time t 100 ns WC Write Pulse Width tWP 75 ns 3 Address Setup Time tAW 0 ns tWR1 0 ns 12 Write Recovery Time t 10 ns 13 WR2 Output High-Z from WE ODW 35 ns 5 Output Active from WE OEW 5 ns 5 Data Setup Time t 40 ns 4 DS Data Hold Time tDH1 0
Breakdown Voltage Temperature I = 250 µA, Referenced to 25°C / ∆T Coefficient D -- 0.55 -- V/°C J DSS V DS = 500 V, GS = 0 V -- -- 10 µA Zero Gate Voltage Drain Current V DS = 400 V, C = 125°C -- -- 100 µA GSSF Gate-Body Leakage Current, Forward V GS = 30 V, DS = 0 V -- -- 100 nA GSSR Gate-Body Leakage Current
PH 4502 ORP R6 ∞ ORP 0 Ω R7 0Ω pH 510Ω Ph R7 12,5KΩ 12,5= 75 +15 Änderungen auf der Platine für die Redoxmessung Der 0Abgleich (Offset): R? = 0 Ω. Den Verstärkungsfaktor von 3 auf 1herabsetzen. R7 = 0 Ω Widerstand. R6 offen lassen. Neu kalibrieren. Die Redox-Sonde
safety approved. See Note 4 • Excellent noise immunity enables designs that achieve class “A” INN3678C 75 W 65 W INN3679C 85 W 75 W performance criteria for EN61000-4 suite; EN61000-4-2, 4-3 INN3670C 100 W 85 W (30 V/m), 4-4, 4-5, 4-6, 4-8 (100 A/m) and 4-9 (1000 A/m) 900 V MOSFET 230 VAC ±15% 85 ‒ 440 VAC
f c e r f 60 C 60 A o g i g t r t e p ar 40 D 40 O D r a er a S a e 20 e 20 p m e T S 0 E 0 25 50 75 100 125 150 0 25 50 75 100 125 150 Junction Temperature, T (°C) Junction Temperature, T (°C) J J Figure 4-1 SOA Temperature Derating Coefficient Curve Figure 4-2 Avalanche Energy Derating Coefficient
2011 Microchip Technology Inc. DS22234B-page 25 MCP1640/B/C/D NOTES: DS22234B-page 26 2011 Microchip Technology Inc. MCP1640/B/C/D APPENDIX A: REVISION HISTORY Revision B (March 2011) The following is the list of modifications: 1.
WRITE protection • WRITE protect voltages – (V PFD = power-fail deselect voltage): – M48Z02: V CC = 4.75 to 5.5 V; 4.5 V ≤ VPFD ≤ 4.75 V – M48Z12: V CC = 4.5 to 5.5 V; 4.2 V ≤ VPFD ≤ 4.5 V • Self-contained battery in the CAPHAT™ DIP package • Pin and function compatible with JEDEC standard 2 K x 8 SRAMs
undervolts) LED is also on in the standby state. GreenLEDnormalvoltageindicators RedLEDerrorindication DS7 DS4 DS3 DS8 DS5 DS2 DS6 DS13 DS9 DS10 DS11 DS12 +22 +16.5 +15 +14.4 +5 -14.4 -15 -22 OT OV UV OI Figure 6–2: Power supply status indicators for the CRT display power supply GreenLEDnormalvoltageindicators RedLEDerrorindication DS4 DS3 DS8 DS5 DS2 DS6 DS9 DS10 DS11 DS12 +16.5 +15 +14.4 +5 -14.4 -15 OT OV UV OI Figure 6–3: Power supply status indicators for the flat panel display power supply AM700 Audio Measurement Set Service
hysteresisT(V +)T(V –) 0.6 1.3 2.0 V DC VOL Logical “0” clock R output voltage OL = 360 A, VCC= 4.75VDC 0.4 V DC V Logical “1” clock R output voltage I = –360 A, V = 4.75V 2.4 V OH OH CC DC DC Data output and INTR VOL Logical “0” output voltage Data outputs OL = 1.6mA, VCC= 4.75VDC 0.4 V DC INTR outputs OL = 1.0mA, VCC= 4.75VDC 0.4 V DC I = –360 A, V = 4.75V 2.4 V Logical “1” output voltage OH CC DC V OH OH = –10 A, VCC = 4.75DC 4.5 DC IOZL 3-state output leakage V OUT= 0VDC , CS = logical “1” –3 ADC IOZH 3-state output
Parameter Value Unit (1) VDS(sw) Switching drain source voltage JT = 25 ... 125 °C) -0.3 ... 730 V (2) V DS(st) Start-up drain source voltage JT = 25 ... 125 °C) -0.3 ... 400 V I Continuous drain current Internally limited A D V Supply voltage 0 ... 50 V DD IFB Feedback current 3 mA Electrostatic discharge
choice of low-side FET is a trade-off between P = 1 –- - - I 2 r (EQ. 10) conduction losses (r DS(ON) ) and cost. A good rule of thumb for Q2 VIN BAT DSON the rDS(ON) of the low-side FET is 2x the DS(ON) of the high-side FET. Choose a low-side MOSFET that has the lowest possible on- The LGATE
a drain-source voltage, V , rating greater than the maximum input voltage. A 12-V device will be (DS) adequate in this example. 4. Select a device that has at least 50% higher drain current (ID) rating than the desired charge current (REG). 5. Verify that the available drive is large enough to supply
Vey were 12.75V and VCC at 6.25V. s ) c t( 2.9 The Electronic Signature (ES) mode allows the reading out of a binary code from an EPROM that will identify its manufacturer and type. ThiP mode is intended for use by
Verdopplungsschaltung Transistor T30-U3 zugeführt. Sekundärwicklung des Transformators abgenommen. DS2-U3, S26-U3, S27-U3. Die Spannungsquellen zum Sweep-Verstärker. Im Repeater D4-U31, C3-U31, C4-U31, C5-U31. Für +12 V und –12 V sind stabilisiert. Um die Linearität der Sägezahnspannung zu erhöhen und
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