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Datei
RF-BJT.txt
=3.5E-08 CJS=0 VJS=0.75 MJS=0.333 FC=0.9001 Vceo=25 Icrating=100m mfg=CDIL) .model BFR93A NPN(IS=1.329E-15 BF=1.02E+2 NF=1.00025E+0 VAF=5.19E+1 IKF=8.155E+0 ISE=1.39E-14 NE=1.513E+0 BR=1.7695E+1 NR=9.94E-1 VAR=3.28E+0 IKR=1.0E+1 ISC=1.043E-15 NC=1.19E+0 RB=1.0E+1
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PDF
HSMP3864_datasheet.pdf
200 1.5 0.3 3832 K2 2 Series 3833 K3 3 Common Anode 3834 K4 4 Common Cathode Test Conditions VR= V BR IF= 100 mA VR= 50 V Measure f = 100 MHz f = 1 MHz IR≤ 10 mA High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes, Electrical Specifications T = 25°C A Minimum Maximum Typical Maximum Typical Break
in „Diskretes Bauteil für HSMP3864 PIN Diode“ · Mikrocontroller und Digitale Elektronik ·
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PDF
l293d.pdf
voltageL293D: OK = −0.6 A VCC2 + 1.3 V VOKL Low-level output clamp voltage L293D: OK = 0.6 A 1.3 V A 0.2 100 IH High-level input currenEN V I 7 V 0.2 10 µA A −3 −10 IL Low-level input current V I 0 µA EN −2 −100 All outputs at high level 13 22 CC1 Logic supply current IO = 0 All outputs at low level 35 60
in „Motorentreiber L293D“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TNC2C.pdf
and Connected are ON, after 2..3sec LEDs Status and Connected go OFF. Then TNC2C is ready. Jumper BR1: When TNC2C is used with its original EPROM, the clock is very precise; with other versions it could run too slow (factor 4) which is corrected by opening the default bridge BR1 and connecting the other
in „Z80/UA880D mit 28C64 startet nicht“ · Mikrocontroller und Digitale Elektronik ·
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Bild
Handgezeichneter Schaltplan einer Transistorschaltung
STE 4,7k BR9014 30 2,2k BR8050 +5V 100 104 BR9014 4,7k 30 2,2k BR8050
in „Verständnisfrage Schaltung“ · Analoge Elektronik und Schaltungstechnik · · Fotos
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Bild
Handgezeichneter Schaltplan mit Transistoren und Widerständen
STE 4,7k BR9014 10 2,2k BR8050 +5V 100 10uF 20 2,2k BR8050 4,7k BR9014
in „Verständnisfrage Schaltung“ · Analoge Elektronik und Schaltungstechnik · · Fotos
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PDF
SMAJ-HUAAN.pdf
Thermal Resistance Junction to Lead RθJL 20 ℃/W Typical Thermal Resistance Junction to Ambient R θJA 100 ℃/W Notes: 1. Non-repetitive current pulse, per Fig.3 and derated above TA=25℃ per Fig. 2. 2. Mounted on 5.0x5.0mm copper pad to each terminal. 3. Measured on 8.3ms single half sine wave or equivalent
in „Unbekannte SMD Diode“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RequiresAcrobat6-5.pdf
Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, D = 250µA V(BR)DSSTJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C,DI = 1mA ––– ––– 0.044 VGS = 10V, D = 18A RDS
in „Power Mosfet Hexfet wie ansteuern ?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
B772_datasheet.pdf
Unit Collector Cut-off Current CES VCE = -60 V -10 µA (VBE= 0) Collector Cut-off Current I V = -30 V -100 µA CEO (B= 0) CE Emitter Cut-off Current EBO (I = 0) VEB = -5 V -10 µA C Collector-Emitter Breakdown V (BR)CEO Voltage C = -10 mA -30 V Note: 1 (B = 0 ) Collector-Base Breakdown Voltage V (BR)CBO C = -100 µA -60 V (E = 0 ) Emitter-Base Breakdown Voltage V(BR)EBO (I = 0 ) E = -100 µA -5 V C I = -1 A I = -50 mA V C B -0.4 V CE(sat) Collector-Emitter Saturation C = -2 A B = -100 mA -0.7 V Note: 1 Voltage
in „NPN mit PNP Transistor ersetzen für SHARP Pocket-Interface?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irl2203ns.pdf
1000 VGS VGS TOP 10V TOP 10V ) 4.5V A 4.5V ( 3.5V t 3.5V n 3.3V n 3.3V r BOTTOM2.7V r BOTTOM2.7V u100 u100 C C c r u u S S 2.7V o o - n a 10 a 10 r 2.7V D , , D ID I 20µs PULSE WIDTH 20µs PULSE WIDTH T = 25 C TJ= 175 C 1 J 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V DS , Drain-to-Source
in „FETs - 5V steuerspannung - selbstleitend selbstsperrend“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF3205S.pdf
) OPERATION IN THIS AREA LIMITED A BY R DS(on) t TJ= 175 C e ) r100 (000 u t C e a r 10us r C D 10 n100 r r 100us e D e T = 25 C , R J ID 1ms , 1 10 S 10ms I TC= 25 C TJ= 175 C° VGS = 0 V Single Pulse 0.1 1 0.2 0.8 1.4 2.0 2.6 1 10 100 1000 V ,Source-to-Drain Voltage
in „Mosfet Treiber TC4426 + IRF IRF3205S (Ersatz gesucht)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
SS855.pdf
Cutoff Current IEBO VEB-5V,I C0 — — -0.1 μ 發射極截止電流 A Collector-Base Breakdown Voltage C =-10μ A V (BR)CBO -40 — — V 集電極-基極擊穿電壓 Collector-Emitter Breakdown Voltage V C =-10mA -20 — — V 集電極-發射極擊穿電壓 (BR)CEO Emitter-Base Breakdown Voltage V (BR)EBO E =-100μA -5 — — V 發射極 基極擊穿電壓 VCE-1V, H FE) 85 — 400 DC Current Gain IC=-100mA — 直流電流增益 VCE-1V, H FE) 40 — — Ic=-1500mA Collector-Emitter Saturation Voltage VCE(sat) IC=-1500mA, — — -0.6 V 集電極-發射極飽和壓降 IB=-150mA Base-Emitter Voltage V VCE-1V, — -0.8 -1.0 V 基極 發射極電壓 BE C =-10mA
in „STM32 Boot0 via Button / Inverter“ · Mikrocontroller und Digitale Elektronik ·
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PDF
bq76940.pdf
& no Sb/Br) BQ7692003PWR ACTIVE TSSOP PW 20 2000 Green (RoHS CU NIPDAU | Call TI Level-2-260C-1 YEAR -40 to 85 BQ7692003 & no Sb/Br) BQ7692006PW ACTIVE TSSOP PW 20 70 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -
in „Schaltung für aktiven 3s Balancer gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2006111335_Texas-Instruments-BQ7692003PWR_C601650.pdf
& no Sb/Br) BQ7692003PWR ACTIVE TSSOP PW 20 2000 Green (RoHS Call TI | NIPDAU Level-2-260C-1 YEAR -40 to 85 BQ7692003 & no Sb/Br) BQ7692006PW ACTIVE TSSOP PW 20 70 Green (RoHS NIPDAU Level-2-260C-1 YEAR -40 to
in „bq76940 balancing“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Lan_Server.ino
client.println("<H1>Safe by Toni and Rui Santo</H1>"); client.println("<hr />"); client.println("<br />"); client.println("<H2>Schaffst du es den Safe zu knacken?</H2>"); client.println("<br />"); client.println("<a href=\"/?button1\"\">1</a>"); client.println("<a href=\"/?button2\"\">2</a>"); client.println("<br />"); client.println("<br />"); client.println("<a href=\"/?button3\"\">3</a>"); client.println("<a href=\"/?button4\"\">4</a>"); client.println("<br />"); client.println("<br />"); client.println("<
in „Arduino WEB Safe“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irfp2907.pdf
1000 10000 OPERATION IN THIS AREA ) LIMITED BY R DS (on) ( ° ) n TJ= 175 C t e100 n1000 u r C C i e r r 100µsec D 10 o 100 s - e - 1msec e T = 25 C i R J r , 1 D 10 I D Tc = 25°C I Tj = 175°C 10msec VGS = 0 V Single Pulse 0.1 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 10 100 1000 VSD ,Source-to-Drain
in „Sinusendstufe für 300A“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRFP2907.pdf
1000 10000 OPERATION IN THIS AREA ) LIMITED BY R DS (on) ( ° ) n TJ= 175 C t e100 n1000 u r C C i e r r 100µsec D 10 o 100 s - e - 1msec e T = 25 C i R J r , 1 D 10 I D Tc = 25°C I Tj = 175°C 10msec VGS = 0 V Single Pulse 0.1 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 10 100 1000 VSD ,Source-to-Drain
in „Auto-Kühler-Lüfter per PWM manuell steuern“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TLC5941.pdf
device 16 TLC5941 www.ti.com SLVS589–JULY 2005 Application Example VCC V(LED) V(LED) V(LED) V(LED) 100 k OUT0 OUT15 OUT0 OUT15 SIN SIN SOUT SIN SOUT XERR XERR VCC XERR VCC SCLK SCLK SCLK XLAT XLAT 100 nF XLAT 100 nF TLC5941 TLC5941 GSCLK GSCLK GSCLK ControllerMODE MODE IREF MODE IREF BLANK VCC BLANK
in „AtMega 48 Timmer“ · Mikrocontroller und Digitale Elektronik ·
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PDF
UC1701.pdf
Mixed-Signal IC ©1999~2008 17. Set LCD Bias Ratio Action C/D W/R D7 D6 D5 D4 D3 D2 D1 D0 Set Bias Ratio, BR 0 0 1 0 1 0 0 0 1 BR Select voltage bias ratio required for LCD. Default : 0 The setting of Bias ratio varies according to Duty: DUTY BR = 0 BR = 1 1/65 1/9 1/7 1/49 1/8 1/6 1/33 1/6 1/5 1/55 1/8 1/6
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PDF
2sc5707.pdf
Saturation Voltage VBE (sat) IC=(-)2A, IB=(-)40mA (-)0.83 (-)1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO C =(-)10 AE I =0 (-50)80 V Collector-to-Emitter Breakdown VoltagV (BR)CES C =(-)100 A,BE =∞ 80 V Collector-to-Emitter Breakdown VoltagV I =(-)1mA, R =∞ (-)50 V (BR)CEO C BE Emitter-to-Base Breakdown
in „Dell TFT Reparatur“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlr2905_1_.pdf
center of die contact. I ≤ 25A, di/dt ≤ 270A/µs,≤ V , Uses IRLZ44N data and test conditions. SD DD (BR)DSS TJ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. 2 www.irf.com IRLR/U2905 1000 1000 TOP 15V TOP 15V 12V 12V 10V 10V ) 6.0V ) 8.0V ( 4.0V ( 4.0V n 3.0V n 3.0V e BOTTOM 2.5V e BOTTOM 2.5V u 100 r 100
in „Motortreiber“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLU2905.pdf
center of die contact. I ≤ 25A, di/dt ≤ 270A/µs,≤ V , Uses IRLZ44N data and test conditions. SD DD (BR)DSS TJ≤ 175°C Pulse width ≤ 300µs; duty cycle ≤ 2%. 2 www.irf.com IRLR/U2905 1000 1000 TOP 15V TOP 15V 12V 12V 10V 10V ) 6.0V ) 8.0V ( 4.0V ( 4.0V n 3.0V n 3.0V e BOTTOM 2.5V e BOTTOM 2.5V u 100 r 100
in „High Power LED Driver“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF4905.pdf
Reverse Recovery Time ––– 89 130 ns T J 25°C, F = -38A Q Reverse Recovery Charge ––– 230 350 nC di/dt = -100A/µs ④ rr on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on isSdDminated by L +L ) Notes: ① Repetitive rating; pulse width limited by ③ SD ≤ -38A, di/dt ≤ -270A/µDD ≤ V(BR)DSS max
in „Frage zu Push Pull Abwärtswandler“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
code.txt
die Farben und Helligkeit ein:</p> Rot: <input type="number" id="red" min="0" max="255" value="0"><br> Grün: <input type="number" id="green" min="0" max="255" value="0"><br> Blau: <input type="number" id="blue" min="0" max="255" value="0"><br> Weiß: <input type="number" id="white" min="0" max="255" value="255"><br> Helligkeit: <input type="number" id="brightness" min="0" max="255" value="255"><br> Regenbogen: <input type="checkbox" id="rainbow"><br> <button onclick="setRGBW()">Setze Werte</button> <p id="status
in „ESP8266 Fauxmo mit Webserver“ · Mikrocontroller und Digitale Elektronik ·
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Datei
io430x16x.h
unsigned char SREF : 3; unsigned char EOS : 1; } ADC12MCTL15_bit; } @ 0x008F; #define SHT0_0 (0*0x100u) #define SHT0_1 (1*0x100u) #define SHT0_2 (2*0x100u) #define SHT0_3 (3*0x100u) #define SHT0_4 (4*0x100u) #define SHT0_5 (5*0x100u) #define SHT0_6 (6*0x100u) #define SHT0_7 (7*0x100u) #define SHT0_8 (8*0x100u) #define SHT0_9 (9*0x100u) #define SHT0_10 (10*0x100u) #define SHT0_11 (11*0x100u) #define SHT0_12 (12*0x100u) #define SHT0_13 (13*0x100u) #define SHT0_14 (14*0x100u) #define SHT0_15 (15*0x100u) #define
in „Pins ein und ausschalten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
tps61220.pdf
1.2 V; 2.4V; 3.6 V; 4.2 V] (TPS61222) Figure 4 Efficiency versus Input Voltage, VOUT = 1.8 V, OUT = [100 µA; 1 mA; 10 mA; 50 mA] Figure 5 (TPS61220) versus Input Voltage, OUT = [100 µA; 1 mA; 10 mA; 50 mA] (TPS61221) Figure 6 versus Input Voltage, OUT = [100 µA; 1 mA; 10 mA; 50 mA] (TPS61222) Figure 7
in „TPS61220 Aufbau will nicht laufen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
tps61220.pdf
1.2 V; 2.4V; 3.6 V; 4.2 V] (TPS61222) Figure 4 Efficiency versus Input Voltage, VOUT = 1.8 V, OUT = [100 µA; 1 mA; 10 mA; 50 mA] Figure 5 (TPS61220) versus Input Voltage, OUT = [100 µA; 1 mA; 10 mA; 50 mA] (TPS61221) Figure 6 versus Input Voltage, OUT = [100 µA; 1 mA; 10 mA; 50 mA] (TPS61222) Figure 7
in „Ultra Low Power Versorgung aus Batterie, 3,3V und 5V“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
XBSM6T_DATA_E.pdf
Value Unit Rth(j-l) Junction to leads 20 °C/W R Junction to ambient on printed circuit on recommended 100 °C/W th(j-a) pad layout Table 3. Electrical characteristics (T amb = 25 °C) Symbol Parameter I F V RM Stand-off voltage V Breakdown voltage BR VCL VBR V Clamping voltage VRM V F CL V RM Leakage current
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PDF
irf_1404.pdf
4.5V u u C C c c u u 4.5V S100 o100 o 4.5V o - - i i r r D , ,D D I I 20µs PULSE WIDTH 20µs PULSE WIDTH ° 10 T J 25 C 10 T J 175 C 0.1 1 10 100 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig
in „Pulsschweisgerät mit Auto Batt Schaltungs Verbesserung“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
webpage.h
"<br><br>\r\n" "<p>Du hast es geschafft: Der Webserver läuft!</p>" "<br><hr><br>\r\n" "<div style=\"width:200px;margin: 0 auto;\">\r\n" "<div style=\"float:left;width:100px\">\r\n" "<form method=\"post\"
in „AVR ETH_M32_EX von Ulrich Radig“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF_1404_S.pdf
10000 OPERATION IN THIS AREA LIMITED BY R ) DS(on) ( ° n TJ= 175 C )000 e ( u100 t 10us C e i r r C100 100us D i r TJ= 25 C r e D 1ms e 10 , , I 10ms D 10 IS TC= 25 C TJ= 175 C V GS = 0 V Single Pulse 1 1 0.4 0.8 1.2 1.6 2.0 2.4 1 10 100 VSD ,Source-to-Drain Voltage (V) V DS , Drain-to-Source
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irl1404.pdf
10V A 7.0V A 7.0V t 6.0V t 6.0V n 5.5V e 5.0V r BOTTOM4.3V r BOTTOM 4.3V u 4.3V u 4.3V C e r r u o100 S100 - t t n n a r D D , , ID ID 20µs PULSE WIDTH 20µs PULSE WIDTH TJ= 25 C TJ= 175 C 10 10 0.1 1 10 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
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PDF
RFM12.pdf
350 375 6 360 400 450 t PLL lock time After 10MHz step hopping, 20 us lock frequency error <10 kHz BR Data rate With internal digital 0.6 115.2 kbps demodulator BR A Data rate With external RC filter 256 kbps Pmin sensitivity BW=134KHz,BR=1.2kbps -102 -96 dBm AFC range AFC working range dFSKFSK deviation
in „RFM12 mit HCS12“ · Mikrocontroller und Digitale Elektronik ·
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PDF
RFM12.pdf
350 375 6 360 400 450 t PLL lock time After 10MHz step hopping, 20 us lock frequency error <10 kHz BR Data rate With internal digital 0.6 115.2 kbps demodulator BR A Data rate With external RC filter 256 kbps Pmin sensitivity BW=134KHz,BR=1.2kbps -102 -96 dBm AFC range AFC working range dFSKFSK deviation
in „Beispielprogramm für RFM12 433MHz Funk-Module“ · Projekte & Code ·
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PDF
RFM12_hope_rf.pdf
350 375 6 360 400 450 t PLL lock time After 10MHz step hopping, 20 us lock frequency error <10 kHz BR Data rate With internal digital 0.6 115.2 kbps demodulator BR A Data rate With external RC filter 256 kbps Pmin sensitivity BW=134KHz,BR=1.2kbps -102 -96 dBm AFC range AFC working range dFSKFSK deviation
in „RFM12 - hängt in while (!(RF_PIN&(1<<SDO)));“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Kleines_LCD_Tutorial.htm
--------------- ; ; und natürlich die oben angegebenen <a href="#verz1">Verzögerungsschleifen </a><br>nicht vergessen... Diese werden, wie gesagt, durch eine INCLUDE-Anweisung am Programmende hinzugefügt. <a href="#init">Initialisierung</a><br> <a href="#vierbit">Vierbitmodus</a><br> <a href="#anfang
in „AVR-Tutorial: LCD - Erweiterung lcd-routines.asm - Bitte um Feedback“ · Mikrocontroller und Digitale Elektronik ·
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PDF
datenblatt_transistor.pdf
otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit CBO Collector Cut-off VCB = 20 V 100 nA Current (I = 0) V = 20 V T = 150 C o 5 A E CB C EBO Emitter Cut-off Current VEB = 5 V 100 nA (C = 0) V(BR)CBO Collector-Base C = 10 A 50 V Breakdown Voltage (E = 0) V (BR)CEO Collector-Emitter C
in „PWM und Transistor“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlz24n.pdf
tudn-onFisSfoDinatefF6OFg (g M :dte D FRe4etitiheFdatin±xFF4uGseFpiftyFGibitefF6O SD ≤F88m FfiWftF≤FIQ5mW9sDD1≤F1(BR)DSS FFFFFba%SF;unctionFteb4edatudeSF)FkeeF0i±SF88FFFFFJ=F8w°/C 1 DFI°1 Fstadtin±F= DFI°/C FgFDFwQ59z 7uGseFpiftyF≤ 3559sxFfutOFcOcGe ≤FIUS DD J FFFFGR DFI°Ω ASDF88mSF)keeFli±udeF8IM IRLZ24N 100 TOP 15V
in „IR2127 Beschaltung als Low Side Schalter + Mosfet“ · Mikrocontroller und Digitale Elektronik ·
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PDF
bf258.pdf
Symbol Parameter Test Conditions Min. Typ. Max. Unit CBO Collector Cutoff Current for BF257 VCB = 100 V 50 nA (E = 0) for BF258 VCB = 200 V 50 nA for BF259 VCB = 250 V 50 nA V (BR) CBO Collector-base for BF257 160 V Breakdown Voltage IC = 100 A for BF258 250 V (I = 0) for BF259 300 V E V (BR)CEO* Collector-emitter
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PDF
BC368.pdf
= 25°C unless otherwise noted Symbol Parameter Test Conditions Min Max Units OFFCHARACTERISTICS V (BR)CEO Collector-Emitter Breakdown Voltage IC= 10 mA, I B 0 20 V V Collector-Base Breakdown Voltage I = 100 A, I = 0 25 V (BR)CES C µ E V (BR)EBO Emitter-Base Breakdown Voltage E = 10µA, IC= 0 5.0 V ICBO
in „Transistor - Spannungsabfall“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2N3702.pdf
otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Base Breakdown Voltage V(BR)CBO C = 10mA, E = 0 40 − − V Collector−Emitter Breakdown VoltageV(BR)CEO C = 100A,B = 0 , Note 2 25 − − V Emitter−Base Breakdown Voltage V(BR)EBO E = 100A, C = 0 5 − − V Collector Cutoff Current CBO VCB = 20V,EI = 0 − − 100 nA Emitter Cutoff Current EBO VEB = 3V,CI = 0 − − 100 nA DC Current Gain hFE VCE = 5V,CI = 50mA, Note 2 60 − 300 − Collector−Emitter Saturation VoltageV I = 50mA, I = 5mA, Note 2 − − 0.25 V CE(sat)C
in „[V] ca. 250-280St 2N3702 (PNP TO92) und 128St. BC320 (PNP TO92)“ · Markt ·
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PDF
2N3702-NTE.pdf
otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Base Breakdown Voltage V(BR)CBO C = 10mA, E = 0 40 − − V Collector−Emitter Breakdown VoltageV(BR)CEO C = 100A,B = 0 , Note 2 25 − − V Emitter−Base Breakdown Voltage V(BR)EBO E = 100A, C = 0 5 − − V Collector Cutoff Current CBO VCB = 20V,EI = 0 − − 100 nA Emitter Cutoff Current EBO VEB = 3V,CI = 0 − − 100 nA DC Current Gain hFE VCE = 5V,CI = 50mA, Note 2 60 − 300 − Collector−Emitter Saturation VoltageV I = 50mA, I = 5mA, Note 2 − − 0.25 V CE(sat)C
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PDF
p6smb6.pdf
Voltage @ PP V RWM Working Peak Reverse Voltage V V V IR Maximum Reverse Leakage Current @ V RWM C BR RWM V IR V F V BR Breakdown Voltage @ IT IT IT Test Current QV BR Maximum Temperature Coefficient of BR IF Forward Current IPP VF Forward Voltage @ F Uni−Directional TVS 5. 1/2 sine wave or equivalent
in „was ist das für ein Bauteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
p6smb6_8at3_d-1196020.pdf
Voltage @ PP V RWM Working Peak Reverse Voltage V V V IR Maximum Reverse Leakage Current @ V RWM C BR RWM V IR V F V BR Breakdown Voltage @ IT IT IT Test Current QV BR Maximum Temperature Coefficient of BR IF Forward Current IPP VF Forward Voltage @ F Uni−Directional TVS 5. 1/2 sine wave or equivalent
in „Ersatzteilempfehlungen gesucht (TVS-Diode HDD)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF1404.pdf
) Calculated continuous current based on maximum allowable I ≤ 121A, di/dt ≤ 130A/µs, ≤ V , SD DD (BR)DSS junction temperature. Package limitation current is 75A. TJ≤ 175°C 2 www.irf.com IRF1404 1000 VGS 1000 VGS ) TOP 15V ) TOP 15V ( 8.0V A 8.0V t 7.0V t 6.0V e 5.5V e 5.5V r 5.0V r BOTTOM4.5VV C100
in „MOSFET wird sehr heiß“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BC_337-XX.pdf
) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO Vdc (I = 10 mA, I = 0) BC337 45 — — C B BC338 25 — — Collector–Emitter Breakdown Voltage V(BR)CES Vdc (C = 100 A,EI = 0) BC337 50 — — BC338 30 — — Emitter–Base Breakdown Voltage V(BR)EBO 5.0 — — Vdc (E = 10 mAC I = 0) Collector Cutoff Current ICBO nAdc (CB = 30 VE I = 0) BC337 — — 100 (V = 20 V, I = 0) BC338 — — 100 CB E Collector Cutoff Current I nAdc (V = 45 V, V = 0) BC337 CES — — 100 CE BE (CE = 25 V,BE = 0) BC338 — — 100 Emitter Cutoff Current IEBO — — 100 nAdc (EB = 4.0 V,CI
in „Transistorberechnungen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BC337.pdf
) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO Vdc (I = 10 mA, I = 0) BC337 45 — — C B BC338 25 — — Collector–Emitter Breakdown Voltage V(BR)CES Vdc (C = 100 A,EI = 0) BC337 50 — — BC338 30 — — Emitter–Base Breakdown Voltage V(BR)EBO 5.0 — — Vdc (E = 10 mAC I = 0) Collector Cutoff Current ICBO nAdc (CB = 30 VE I = 0) BC337 — — 100 (V = 20 V, I = 0) BC338 — — 100 CB E Collector Cutoff Current I nAdc (V = 45 V, V = 0) BC337 CES — — 100 CE BE (CE = 25 V,BE = 0) BC338 — — 100 Emitter Cutoff Current IEBO — — 100 nAdc (EB = 4.0 V,C
in „Stromverstaerkung/Grundlagen Bipolartransistor“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
pga2311.pdf
OUTPUT BUFFER Offset Voltage VIN = AGND, Gain = 0dB 0.25 0.5 0.25 0.5 mV Load Capacitance Stability 100 100 pF Short–Circuit Current 50 50 mA Unity–Gain Bandwidth, Small Signal 10 10 MHz 2 www.ti.com SBOS218A – DECEMBER 2001 – REVISED JUNE 2002 ELECTRICAL CHARACTERISTICS (Cont.) At A = +25°C, A + = +5V
in „geregelter Verstärker“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
tlv320aic23b.pdf
ACTIVE TSSOP PW 28 2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM no Sb/Br) TLV320AIC23BIRHD ACTIVE QFN RHD 28 73 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR no Sb/Br) TLV320AIC23BIRHDG4 ACTIVE QFN RHD 28 73 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR no Sb/Br) TLV320AIC23BIRHDR
in „Brauche ich zwei Enable für BCLK? Darf man das So machen?“ · FPGA, VHDL & Co. ·
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PDF
tlv320aic23b.pdf
ACTIVE TSSOP PW 28 2000 Green (RoHS & CU NIPDAU Level-1-260C-UNLIM no Sb/Br) TLV320AIC23BIRHD ACTIVE QFN RHD 28 73 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR no Sb/Br) TLV320AIC23BIRHDG4 ACTIVE QFN RHD 28 73 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR no Sb/Br) TLV320AIC23BIRHDR
