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PDF
DS3502-3122456.pdf
and Industrial Controls Mechanical POT Replacement Ordering Information PART TEMP RANGE PIN-PACKAGE DS3502U+ -40°C to +100°C 10 μSOP Pin Configuration and Typical Operating Circuit appear at DS3502U+T&R -40°C to +100°C 10 μSOP end of data sheet. +Denotes a lead(Pb)-free/RoHS-compliant package. T&R = Tape
in „Anschluss des Potentiometers an den Microcontroller“ · Mikrocontroller und Digitale Elektronik ·
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PDF
si1539cd.pdf
= - 250 µA V DS GS D P-Ch - 1.2 - 2.5 N-Ch ± 100 Gate-Body Leakage GSS VDS = 0 V,GS = ± 20 V nA P-Ch ± 100 V = 30 V, V = 0 V DS GS N-Ch 1 VDS = - 30 V,GS= 0 V P-Ch - 1 Zero Gate Voltage Drain Current DSS µA VDS = 30 V,GS = 0 V,JT = 55 °C N-Ch 10 V DS= - 30 V,GS = 0 V,JT = 55 °C P-Ch - 10 V =5 V, V = 10 V b I DS GS N-Ch 2 A On-State Drain Current D(on) V = -5 V, V = - 10 V P-Ch - 1 DS GS VGS = 10 V,DI = 0.6 A N-Ch 0.323 0.388 b VGS= - 10 V,DI =
in „7-Segment Display (elektromagnetisch) Ansteuerung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ZXMN2B01F.pdf
V I = 250A, V =0V (BR)DSS D GS voltage Zero gate voltage drain current I 1 A V = 20V, V =0V DSS DS GS Gate-body leakage I 100 nA V =±8V, V =0V GSS GS DS Gate-source threshold voltage VGS(th) 0.4 1.0 V ID= 250A, VDS=V GS Static drain-source on-state RDS(on) 0.100 ⍀ V GS= 4.5V,DI = 2.4A (*) resistance
in „LED-Spannungswandler mit MOSFET ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Seiten_aus_FDV303N.pdf
mV / C VGS(th) GateThresholdVoltage V DSV ,GS =D250 µA 0.65 0.8 1.5 V R DS(ON) Static Drain-Source On-Resistance V GS4.5 V, I D 0.5 A 0.33 0.45 Ω T =125°C 0.52 0.8 J V = 2.7 V, I = 0.2 A 0.44 0.6 GS D I On-State Drain Current V = 2.7 V, V = 5 V 0.5 A D(ON) GS DS gFS Forward Transconductance V DS5 V, I D 0.5 A 1.45 S DYNAMIC CHARACTERISTICS C iss InputCapacitance V DS10 V, V =GS V, 50 pF C oss Output Capacitance f = 1.0 MHz 28 pF C rss ReverseTransferCapacitance 9 pF SWITCHING CHARACTERISTICS
in „Antiparallele Dioden??“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
buz30a.pdf
Values Unit min. typ. max. Dynamic Characteristics Transconductance g S fs V ≥ 2 I R I = 13.5 A 6 15 - DS * D * DS(on)max, D Input capacitance C pF iss VGS = 0 V,DS = 25 V, f = 1 MHz - 1400 1900 Output capacitance Coss VGS = 0 V,DS = 25 V, f = 1 MHz - 280 400 Reverse transfer capacitance Crss VGS = 0 V,DS
in „Elektronische Last mit 2 MOSFETs“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF3205Z.pdf
Capacitance ––– 310 ––– pF ƒ = 1.0MHz Coss Output Capacitance ––– 1940 ––– V = 0V, V = 1.0V, ƒ = 1.0MHz GS DS Coss Output Capacitance ––– 430 ––– VGS= 0V, V DS= 44V, ƒ = 1.0MHz Cosseff. Effective Output Capacitance ––– 640 ––– VGS= 0V, VDS= 0V to 44V f Source-Drain Ratings and Characteristics Parameter Min.
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP23017-Datasheet.pdf
102 SDA and SCL Rise Time: TR(1) 100 kHz mode — — 1000 ns 1.8V – 5.5V 400 kHz mode 20 + 0.1 C(2) — 300 ns 2.7V – 5.5V B 1.7 MHz mode 20 — 160 ns 4.5V – 5.5V 103 SDA and SCL Fall Time: T (1) F 100 kHz mode — — 300 ns 1.8V – 5.5V (2) 400 kHz mode 20 + 0.1 B — 300 ns 2.7V – 5.5V 1.7 MHz mode 20 — 80 ns
in „kennt jemand sich aus mit MC23017 IO-Board“ · Mikrocontroller und Digitale Elektronik ·
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PDF
16F648a_40044F.pdf
— — 96 NA — — NA — — NA — — 300 NA — — NA — — NA — — 500 NA — — NA — — NA — — HIGH 55.93 — 0 15.63 — 0 0.512 — 0 LOW 0.2185 — 255 0.0610 — 255 0.0020 — 255 © 2007 Microchip Technology Inc. DS40044F-page 75 PIC16F627A/628A/648A TABLE
in „16f627A schaltet RA5 u RA6 nicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
schiebereg.pdf
shift register clock input ST 12 storage register clock input CP OE 13 output enable (active LOW) DS 14 serial data input VCC 16 positive supply voltage handbook, halfpage 11 12 handbook, halfpage Q1 1 16 VCC SHCP STCP Q ' 9 Q2 2 15 Q0 7 Q0 15 Q3 3 14 DS 1 Q1 Q4 4 13 OE Q 2 595 2 Q5 5 12 STCP 14 D Q3
in „wie steuer ich nen sn7447 mit avr an??“ · Mikrocontroller und Digitale Elektronik ·
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PDF
74HC_HCT595_CNV_3.pdf
shift register clock input ST 12 storage register clock input CP OE 13 output enable (active LOW) DS 14 serial data input VCC 16 positive supply voltage handbook, halfpage 11 12 handbook, halfpage Q1 1 16 VCC SHCP STCP Q ' 9 Q2 2 15 Q0 7 Q0 15 Q3 3 14 DS 1 Q1 Q4 4 13 OE Q 2 595 2 Q5 5 12 STCP 14 D Q3
in „LCD DEM20485 in gerade Zeile springen (c't-Bot)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
1-bsp171.pdf
Characteristics Transconductance gfs S V ≥2 I R I = -1.7 A 1 1.55 - DS * D *DS(on)max, D Input capacitance Ciss pF V GS= 0 V, DS = -25 V, f = 1 MHz - 720 960 Output capacitance C oss V GS= 0 V, DS = -25 V, f = 1 MHz - 290 435 Reverse transfer capacitance Crss V GS= 0 V,
in „High Side Switch“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PSMN4R8-100PSE.pdf
breakdown voltage ID= 250 µA; V GS = 0 V; Tj= -55 °C 90 - - V V GS(th) gate-source threshold ID= 1 mA; V DS = VGS ; j = 25 °C; 2 3 4 V voltage Fig. 10; Fig. 11 V GSth gate-source threshold ID= 1 mA; V DS = VGS ; j = 175 °C; 1 - - V voltage Fig. 11 I = 1 mA; V = V ; T = -55 °C; - - 4.6 V D DS GS j Fig. 11 IDSS
in „Problem mit N-MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2SK1119_datasheet_en_20090929__1_.pdf
Converter and Motor Drive Applications Unit: mm z Low drain−source ON resistance : R = 3.0 Ω (typ.) DS (ON) z High forward transfer admittance : |Yfs = 2.0 S (typ.) z Low leakage current : IDSS = 300 μA (max) (V DS = 800 V) z Enhancement mode : Vth = 1.5 to 3.5 V DS = 10 V, D = 1 mA) Absolute Maximum
in „brauche hilfe beim Nachbau eines DC-DC-Converters“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
VRE119_Thaler.pdf
VOLTAGE VRE117 +3.0 * * * V VRE118 -3.0 * * * V VRE119 ±3.0 * * * V OUTPUT VOLTAGE ERRORS Initial Error 300 200 300 200 µV Warmup Drift 2 1 2 1 ppm (1) Tmin - Tmax 200 100 400 200 µV Long-Term Stability 6 * * * ppm/1000hr. Noise (.1-10Hz) 1.5 * * * µVpp OUTPUT CURRENT Range ±10 * * * mA REGULATION Line 3
in „[V] Referenzspannungsquellen VRE Thaler Corp.“ · Markt ·
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PDF
Class_1_Bluetooth_Module_with_EDR_Support_DS500022-2257897.pdf
Quicker Time to Market • Compatible with Microchip Microcontroller Fami- lies (PIC16F, PIC18F, PIC24F/H, dsPIC33 and PIC32) • Up to 100 meter range 2021 Microchip Technology Inc. DS50002280B-page 1 RN41/RN41N RN41/RN41 MODULE VARIANTS (1) Model Antenna Firmware Description RN41 Ceramic Chip 4.77, 6.15 Class
in „[V] Microchip Bluetooth Module RN41-I/RM und RN42-I/RM“ · Markt ·
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PDF
FV-1.pdf
(1.27) TYP .045 (1.14) TYP .016 (.41)TYP PIN#1 ID .050 (1.27) TYP 28 SOIC 300 MIL .704 (17.88) TYP 7 deg. TYP .099 (2.51) TYP Spin Semiconductor www.spinsemi.com SPN1001-DS-170829 – 29 August 2017 Spin FV-1 Reverb IC Semiconductor Featuring Spin Semiconductor Virtual Analog Technology
in „Schaltung mit Mono-Output zu Stereo-Output abändern“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FV-1.pdf
(1.27) TYP .045 (1.14) TYP .016 (.41)TYP PIN#1 ID .050 (1.27) TYP 28 SOIC 300 MIL .704 (17.88) TYP 7 deg. TYP .099 (2.51) TYP Spin Semiconductor www.spinsemi.com SPN1001-DS-170829 – 29 August 2017 Spin FV-1 Reverb IC Semiconductor Featuring Spin Semiconductor Virtual Analog Technology
in „Plattform für Effektgeräte“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FMMT618.pdf
Turn-Off Time t(off) - 400 - ns IB1= -B2 = 10mA Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% FMMT618 4 of 7 October 2012 Document number: DS33111 Rev. 5 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated FMMT618 Typical Electrical Characteristics
in „Maximal Strom von Atmel-MCU erhöhen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irl2203n.pdf
Ultra Low On-Resistance V DSS = 30V l Dynamic dv/dt Rating l 175°C Operating Temperature R = 7.0m DS(on) l Fast Switching G l Fully Avalanche Rated D = 116A S Description ® AdvancedHEXFET PowerMOSFETsfromInternational Rectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea
in „Saito Pro Charger Batterieladegerät - Mikrocontroller ATmel ATTINY26L defekt?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Amp-30W-25-110MHz-BLF244-1.pdf
APPLICATION NOTE A wideband 30 W push-pull amplifier with two MOS transistors BLF244 (V = 28 V); range DS 25 − 110 MHz NCO8701 Philips Semiconductors A wideband 30 W push-pull amplifier with two MOS Application Note transistors BLF244 (V = 28 V); range 25 − 110 MHz NCO8701 DS CONTENTS 1 INTRODUCTION 2 AMPLIFIER
in „20MHz - 200MHz Isolator bzw. Zirkulator“ · HF, Funk und Felder ·
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PDF
si3459bdv.pdf
C - 55 °C 0 0.0 0 1 2 3 4 0 1 2 3 4 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics 0.30 500 ) 0.27 400 ( C e ) iss n V GS= 4.5 V ( t e s 0.24 n 300 e i - a O p - 0.21 C 200 o - S C D VGS = 10 V R 0.18 100 C oss C rss 0.15 0 0 2 4 6 8 0 10 20 30 40 50 60 I - Drain Current (A) V - Drain-to-Source Voltage (V) D DS On-Resistance vs. Drain Current and Gate Voltage Capacitance 10 1.9 D = 2.2 A V 1.7 ( 8 V GS= 10 V,DI = 2.2 A g V = 30 V e l DS n 1.5 V t ) e 6 V = 48 V s d r DS e i 1.3 o - a - O r - -) o 1.1 VGS =
in „SMD Bauteil identifizieren "*"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LG_L1733TR_L1933TR_Monitor_Service_manual.pdf
C528 0CK104CF56A 0603B104K160CT100nF10%16V D704 0DS226009AA KDS2261.2V85V300MA2A4NS C529 0CK104CF56A 0603B104K160CT100nF10%16V D705 0DS226009AA KDS2261.2V85V300MA2A4NS C530 0CK104CF56A 0603B104K160CT100nF10%16V D706 0DS226009AA KDS2261.2V85V300MA2A4NS C531 0CK104CF56A 0603B104K160CT100nF10%16V D707 0DS226009AA KDS2261.2V85V300MA2A4NS C532 0CK104CF56A 0603B104K160CT100nF10%16V D708 0DS226009AA KDS2261.2V85V300MA2A4NS C533 0CK104CF56A 0603B104K160CT100nF10%16V D709 0DS226009AA KDS2261.2V85V300MA2A4NS
in „Monitor TFT und Röhre Computer“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
K4B4G1646Q-Samsung.pdf
0.38 - 0.38 - 0.38 - 0.38 - tCK(avg) 13, g DQ low-impedance time from CK, CK tLZ(DQ) -800 400 -600 300 -500 250 -450 225 ps 13,14, f DQ high-impedance time from CK, CK tHZ(DQ) - 400 - 300 - 250 - 225 ps 13,14, f 1.35V tDS(base) AC160 90 - 40 - - - - - ps d, 17 tDS(base) 140 - 90 - 45 - 25 - ps Data setup
in „Orange Pi - 15$ Quadcore SBC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BSS139.pdf
breakdown voltage V(BR)DSS V GS=-3 V, ID=250 µA 250 - - V V V =3 V, I =56 µA Gate threshold voltage GS(th) DS D -2.1 -1.4 -1 V DS=250 V, Drain-source cutoff current ID(off) - - 0.1 µA V GS=-3 V, T j25 °C V DS=250 V, - - 10 V GS=-3 V, T j125 °C Gate-source leakage current IGSS V GS=20 V, V DS=0 V - - 10 nA On-state drain current IDSS V GS=0 V, V DS=10 V 30 - - mA Drain-source on-state resistance R DS(on) V GS=0 V, ID=15 mA - 12.5 30 Ω V GS=10 V,I D0.1 mA - 7.8 14 |V DS|>2|D |RDS(on)max Transconductance gfs ID=0.08 A 0.060 0.13 - S Threshold voltage
in „High-Side-Strom auf Low-Side spiegeln (Stromspiegel?!)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IRLIB9343-DS-v01_02-EN.pdf
0.1 0.1 0.1 1 10 100 0.1 1 10 100 -V , Drain-to-Source Voltage (V) -V , Drain-to-Source Voltage (V) DS DS Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics 100.0 2.0 c D = -14A ) T J 25°C a V = -10V T = 175°C i GS t J e n R r n 1.5 u 10.0 O ) e r d r u i u S a S t r t n o n
in „DS3231 RTC Modul, Raspberry Pi, Zeitschaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ds17287.pdf
- Ground VBAT - Battery + Supply VBAUX - Auxiliary Battery Supply NC - No Connect DESCRIPTION The DS17285/DS17287 are real-time clocks (RTCs) designed as successors to the industry standard DS1285, DS1385, DS1485, DS1585, and DS1685 PC real-time clocks. These devices provide the industry standard DS1285
in „RTC-Baustein DS17287-5 von Dallas an ATMega16“ · Mikrocontroller und Digitale Elektronik ·
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PDF
1.5KE400CA.pdf
devices Raving V of 10 volts andRunder, the I limit is doubled. DS21503 Rev. 9 - 2 1 of 3 1.5KE6V8(C)A - 1.5KE400(C)A www.diodes.com ã Diodes Incorporated Max. Max. Max. Type Type Reverse Breakdown Voltage Reverse Clamping Max. Voltage Number Number Standoff V @ I Current
in „Ersatztypen für Diode“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Class_2_Bluetooth_Module_with_EDR_Support_DS500023-2256355.pdf
outside corner of any page. The last character of the literature number is the version number, (e.g., DS30000000A is version A of document DS30000000). Errata An errata sheet, describing minor operational differences from the data sheet and recommended workarounds, may exist for current devices. As device
in „[V] Microchip Bluetooth Module RN41-I/RM und RN42-I/RM“ · Markt ·
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Datei
main.c
} } #endif // ******************************************************************************* void DS1820init(void) { char lcd_buffer[33]; // maximum number of DS1820/DS18S20 connected to the 1 Wire bus unsigned char i,j,devices; int temp; char text[16]; TIMSK=0x00; w1_init(); lcd_clear(); lcd_putsf("CodeVisionAVR\n1 Wire Bus Demo"); delay_ms(500); lcd_clear(); // detect how many DS1820/DS18S20 devices // are connected to the 1 Wire bus //devices=w1_search(0xf0,rom_code); sprintf(lcd_buffer,"%u DS1820\nDevice detected",devices); lcd_puts(lcd_buffer); delay_ms(500); //display the
in „Heizungssteuerung mit ATMEGA 32“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BS170.pdf
Operating and Storage Temperature Range - 55 to 150 °C J STG TL Maximum Lead Temperature for Soldering 300 °C Purposes, 1/16" from Case for 10 Seconds Thermal Characteristics TA= 25°C unless otherwise noted Symbol Parameter BS170 MMBF170 Units PD Maximum Power Dissipation 830 300 mW Derate above 25°C 6.6
in „BS170 Wie viel Watt verträgt er?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sta508__3_.pdf
. Symbol Parameter Test conditions Min. Typ. Max. Unit Power P-channel/N-channel R dsON Id= 1 A 200 270 mΩ MOSFET R dsON I Power P-channel/N-channel V = 35 V 50 µA dss leakage dss CC gN Power P-channel RdsON matching Id = 1 A 95 % g Power N-channel R matching Id = 1 A 95 % P dsON Dt_s
in „Kühlkörper mit Lüfter gegen Passivkühlkörper ersetzen SURE Verstärkermodul“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
viper20.pdf
in= 300 V (1) 100 ns (see fig.3) tr Rise Time ID= 0.4 A V in= 300 V (1) 50 ns (see fig. 3) C OSS Output Capacitance VDS = 25 V 90 pF (1) On Inductive Load, Clamped. SUPPLY SECTION Symbol Parameter Test Conditions
in „Besonders sparsame Standby-Schaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
270247_1.pdf
AF4407P P-Channel 30-V (D-S) MOSFET Features General Description -Low rDS(on)rovides Higher Efficiency and Extends These miniature surface mount MOSFETs utilize Battery Life High Cell Density process. Low r DS(on)assures -Miniature SO-8 Surface Mount Package Saves minimal
in „Suche alternative zu Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
70622B.pdf
applications. Rate (BER) and longer communication range. The MRF89XA complies with European (ETSI EN 300-220 V2.3.1) and United States (FCC Part 15.247 and 15.249) regulatory standards. © 2010 Microchip Technology Inc. Preliminary DS70622B-page 7 D M S FIGURE 1-1: MRF89XA SIMPLIFIED BLOCK DIAGRAM 0 R 2
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PDF
70622B.pdf
applications. Rate (BER) and longer communication range. The MRF89XA complies with European (ETSI EN 300-220 V2.3.1) and United States (FCC Part 15.247 and 15.249) regulatory standards. © 2010 Microchip Technology Inc. Preliminary DS70622B-page 7 D M S FIGURE 1-1: MRF89XA SIMPLIFIED BLOCK DIAGRAM 0 R 2
in „Wie genau funktioniert die drahtlose Kommunikation?“ · HF, Funk und Felder ·
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PDF
R3112x_SERIES_Ricoh.pdf
1.0V O 1.0V 0 0 0 0.5 1 1.5 2 2.5 0 0.5 1 1.5 2 2.5 3 3.5 4 V DS(V) V DS(V) 5) Nch Driver Output Current vs. Input Voltage R3112x091x R3112x131x 2.0 5 ) ) A A 4 T1.5 T Topt=-40°C U U t t 3 n n 25°C r1.0 r u Topt=25°C u 2 t t 85°C p0.5 p u u 1 O 85°C O -40°C 0.0 0
in „IC von Tiefentladungsschutz identifizieren“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Viper12A.pdf
2V DSS Drain-Source Voltage D FB 730 V I Off State Drain Current V =500V; V =2V; T=125°C 0.1 mA DSS DS FB j Static Drain-Source I =0.2A 27 30 R DSon D On State Resistance ID=0.2A; Tj100°C 54 tf Fall Time ID=0.1A; VIN300V (See fig.1) 100 ns (See note 1) t Rise Time ID=0.2A; VIN300V (See fig.1) 50 ns r
in „LiIon 18650 Ladegerät für zwei Parallel“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NHD-0420CW-AY3-587980.pdf
2 for details Display-dot DH’ = "1": display shift enable DH’ = "0": dot scroll enable (POR) Shift DS[4:1]=1111b (POR) when DH’ = 1b Determine the line for display shift. DS1 = "1/0": 1st line display shift enable/disable Shift Enable 1 1 0 0 0 0 0 0 1 DS4 DS3 DS2 DS1 DS2 = "1/0": 2nd line display shift
in „NHD-0420CW-AY3 4x20 Zeilen OLED in Betrieb nehmen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SI4946CDY.pdf
Axis Title 0.10 10000 500 10000 ) Ω 0.08 400 e ) C iss c ( t 1000 e 1000 e i 0.06 V = 4.5 V e e e n 300 e e l e GS V = 10 V l l l t C oss l l d - GS s d d c s d 2 n 0.04 1 2 2 p 200 1 2 - C n 100 - 100 S C R 0.02 100 Crss 0 10 0 10 0 5 10 15 20 25 0 15 30 45 60 ID- Drain Current (A) V DS- Drain-to-Source
in „Frage zu Ic SI4948“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
pnFET_Si1551.pdf
Conditions Min. Typ. Max. Unit Static V = V , I = 250 µA N-Ch 0.6 1.5 Gate Threshold Voltage VGS(th) DS GS D V VDS = VGS, D = - 250 µA P-Ch - 0.6 - 1.5 N-Ch ± 100 Gate-Body Leakage IGSS V DS= 0 V, GS = ± 12 V P-Ch ± 100 nA V DS= 20 V, GS = 0 V N-Ch 1 VDS = - 20 V,GS= 0 V P-Ch - 1 Zero Gate Voltage Drain Current IDSS µA V DS= 20 V, GS = 0 V,JT = 85 °C N-Ch 5 V = - 20 V, V= 0 V, T = 85 °C P-Ch - 5 DS GS J VDS ≥ 5 V, GS= 4.5 V N-Ch 0.6 On-State Drain Current D(on) A VDS ≤ - 5 V,GS= - 4.5 V P-Ch - 1.0 VGS = 4.5 VD I = 0.29
in „Kann diese Schaltung den 74HC132 killen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
pnFET_Si1551.pdf
Conditions Min. Typ. Max. Unit Static V = V , I = 250 µA N-Ch 0.6 1.5 Gate Threshold Voltage VGS(th) DS GS D V VDS = VGS, D = - 250 µA P-Ch - 0.6 - 1.5 N-Ch ± 100 Gate-Body Leakage IGSS V DS= 0 V, GS = ± 12 V P-Ch ± 100 nA V DS= 20 V, GS = 0 V N-Ch 1 VDS = - 20 V,GS= 0 V P-Ch - 1 Zero Gate Voltage Drain Current IDSS µA V DS= 20 V, GS = 0 V,JT = 85 °C N-Ch 5 V = - 20 V, V= 0 V, T = 85 °C P-Ch - 5 DS GS J VDS ≥ 5 V, GS= 4.5 V N-Ch 0.6 On-State Drain Current D(on) A VDS ≤ - 5 V,GS= - 4.5 V P-Ch - 1.0 VGS = 4.5 VD I = 0.29
in „Warum sperrt P-Kannal FET M1 nicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
si1551dl.pdf
Conditions Min. Typ. Max. Unit Static V = V , I = 250 µA N-Ch 0.6 1.5 Gate Threshold Voltage VGS(th) DS GS D V VDS = VGS, D = - 250 µA P-Ch - 0.6 - 1.5 N-Ch ± 100 Gate-Body Leakage IGSS V DS= 0 V, GS = ± 12 V P-Ch ± 100 nA V DS= 20 V, GS = 0 V N-Ch 1 VDS = - 20 V,GS= 0 V P-Ch - 1 Zero Gate Voltage Drain Current IDSS µA V DS= 20 V, GS = 0 V,JT = 85 °C N-Ch 5 V = - 20 V, V= 0 V, T = 85 °C P-Ch - 5 DS GS J VDS ≥ 5 V, GS= 4.5 V N-Ch 0.6 On-State Drain Current D(on) A VDS ≤ - 5 V,GS= - 4.5 V P-Ch - 1.0 VGS = 4.5 VD I = 0.29
in „CMOS: NAND bauen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
bs170.pdf
Voltage GS= VDS, V GS(th) 1.0 2 3.0 V I = 1 mA D Gate-Body Leakage Current IGSS – – 10 nA at GS= 15 V, DS = 0 Drain Cutoff CurrentDS= 25 V, GS= 0 IDSS – – 0.5 A Drain-Source ON Resistance R DS(ON) – 3.5 5.0 at GS= 10 V,DI = 0.2 A Thermal Resistance Junction to Ambient Air R thJA – – 1501) K/W Forward Transconductance gm – 200 – mS at V = 10 V, I = 0.2 A, f = 1 MHz DS D Input Capacitance C iss – 30 – pF at DS= 10 V, GS = 0, f = 1 MHz Switching Times at GS = 10 V,DS = 10 V,DR = 100 Turn-On Time ton – 5 – ns Turn-Off Time t – 15 – ns off 1Valid provided that leads are
in „Integrator resetten, bzw. ersatz für SD211“ · Mikrocontroller und Digitale Elektronik ·
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PDF
25AA128.pdf
information purposes only. Microchip Technology Drawing C04-113B © 2009 Microchip Technology Inc. DS21831D-page 15 25AA128/25LC128 8-Lead Plastic Dual In-Line (P) – 300 mil Body [PDIP] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com
in „SPI EEPROM -> Kein Page read :- O“ · Mikrocontroller und Digitale Elektronik ·
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PDF
2303974.pdf
Threshold Voltage VIN V ON/OFFD = –250 PA 0.4 0.9 1.5 V R Static Drain–Source V = –4.5 V, I = –2.8A 34 55 DS(on) GS D m: On–Resistance (Q2) VGS = –2.5 V, D = –2.5 A 45 70 VGS = –1.8 V, ID= –2.0 A 64 100 R DS(on) Static Drain–Source VGS = 4.5 V, D = 0.4A 3.1 4 : On–Resistance (Q1) VGS = 2.7 V, D = 0.2 A 3.8
in „Bauteil gesucht Dusch WC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
40146F.pdf
Microchip Technology Inc. DS40146F-page 35 HCS361 DS40146F-page 36 © 2011 Microchip Technology Inc. HCS361 APPENDIX A: ADDITIONAL REVISION HISTORY INFORMATION Revision F (June 2011) Microchip’s Secure Data Products are covered by
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Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET ▯▯▯D▯C▯ ▯▯▯▯▯▯▯ V (V) r (▯) I (A) DS DS(on) D 0.085 @ VGS = 4.5 V 2.8 20 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302DS (A2)* *Marking
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70628.pdf
Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET ▯▯▯D▯C▯ ▯▯▯▯▯▯▯ V (V) r (▯) I (A) DS DS(on) D 0.085 @ VGS = 4.5 V 2.8 20 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302DS (A2)* *Marking
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steute.pdf
Nr. RF 95 WHKM EN868 95918001 Drehhebel D Typ Best.-Nr. RF 95 D EN868 95921901 Stellbarer Drehhebel DS Typ Best.-Nr. RF 95 DS EN868 95929001 Druckdatum: Seite steute SchaltgeräteBrückenstraße 91 Telefon +49 (0) 5731 745-0 inf@ steute.com 2012-06-29 4 / 10 GmbH & Co. KG 32584 Löhne, DeutschlandTelefax
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DS_K4B4G1646D-BC_I_P_Rev102.pdf
DQS tQH 0.38 - 0.38 - 0.38 - tCK(avg) 13, g DQ low-impedance time from CK, CK tLZ(DQ) -800 400 -600 300 -500 250 ps 13,14, f DQ high-impedance time from CK, CK tHZ(DQ) - 400 - 300 - 250 ps 13,14, f tDS(base) AC175 75 - 25 - - - ps d, 17 Data setup time to DQS, DQS referenced to VIHAC)V (IL) levels tDS
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