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PDF
BAT54.pdf
0 100 200 300 400 500 600 T , AMBIENT TEMPERATURE (°C) I A Tj INSTANTANEOUS FORWARD VOLTAGE (mV) Fig. 1 Power Derating Curve Fig. 2, Typical Forward Characteristics 1000 ) A V = 25V ( R T N 100 E R R U C 10 E G K
in „SMD Bauteil identifizieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
P5504EDG.pdf
250µA V Gate Threshold Voltage V GS(th) VDS = VGS ID= -250µA -1 -1.5 -2.5 Gate-Body Leakage IGSS V DS= 0V, VGS = ±20V ±250 nA V = -32V, V = 0V 1 Zero Gate Voltage Drain Current I DS GS DSS V = -30V, V = 0V, T = 125 °C 10 µA DS GS J 1 On-State Drain Current D(ON) V DS= -5V, VGS = -10V -32 A AUG-19-2004
in „Suche Ersatz für SMD Sicherung K“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
CYStech_MTB09N03H8.pdf
Min. Typ. Max. Unit Test Conditions Static BV DSS 30 - - V V GS, I D250μA VGS(th) 1.0 1.7 3.0 V V DS= V GSI D250μA G FS *1 - 20 - S V DS=5V, ID=20A GSS - - ± 100 nA V GS20 DSS - - 1 μA V DS=24V, V GS =0 - - 25 V DS=20V, V GS =0, Tj=125°C ID(ON)*1 50 - - A V DS=10V, V GS =10V - 8 9.5 m Ω V GS=10V, ID
in „[S] CYStech MOSFETs“ · Markt ·
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LTC_201.pdf
CONDITIONS MIN TYP MAX MIN TYP MAX UNITS tON VS= 2V, RL= 1kΩ, L = 35pF 450 600 450 600 ns tOFF 190 300 190 300 ns tOPEN 100 250 100 250 ns Off Isolation VS= 2VP-P, L = 1kΩ, f = 100Hz 75 75 dB Crosstalk 90 90 dB Charge InjectioINJ RS= 0Ω, CL= 1000pF, S = 2.5V 2 2 pC Total Harmonic Distortion THD VS= 2VP-P
in „Meßverstärker für 1/f-Rauschen 0.1 - 10 Hz“ · Analoge Elektronik und Schaltungstechnik ·
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LM386_Low_Voltage_Audio_Power_Amplifier.pdf
Peak-to-Peak Output Voltage vs Supply Voltage (Referred to the Output) Swing vs Supply Voltage vs Frequency DS006976-5 DS006976-13 DS006976-12 Voltage Gain vs Frequency Distortion vs Frequency Distortion vs Output Power DS006976-14 DS006976-15 DS006976-16 Device Dissipation vs Output Device Dissipation vs Output
in „Elektretmikrofon und LM 386N-1 als Verstärker“ · Mikrocontroller und Digitale Elektronik ·
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PDF
lm386.pdf
Peak-to-Peak Output Voltage vs Supply Voltage (Referred to the Output) Swing vs Supply Voltage vs Frequency DS006976-5 DS006976-13 DS006976-12 Voltage Gain vs Frequency Distortion vs Frequency Distortion vs Output Power DS006976-14 DS006976-15 DS006976-16 Device Dissipation vs Output Device Dissipation vs Output
in „Spannanungsverstärkung“ · Analoge Elektronik und Schaltungstechnik ·
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Low_Drop_Spannungsregler_MCP_1702-5002.pdf
Inc. DS22008D-page 17 MCP1702 NOTES: DS22008D-page 18 © 2009 Microchip Technology Inc. MCP1702 6.0 APPLICATION CIRCUITS AND EQUATION 6-2: ISSUES TJ(MAX) = P TOTAL × RθJA+ TAMAX Where: 6.1 Typical Application
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PDF
2CSR275180R1165-ds201-m-b16-a30.pdf
PRODUCT-DETAILS DS201 M B16 A30 DS201 M B16 A30 FI/LS-Schalter Allgemeine Informationen Typ DS201 M B16 A30 Bestellnummer 2CSR275180R1165 EAN 8012542587217 Beschreibung DS201 M B16 A30 FI/LS-Schalter FI/LS-Schalter (RCBOs
in „Preiswerte RCBOs (Kombinierte FI/LS)“ · Haus & Smart Home ·
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PDF
rt8279.pdf
Max Unit Reference Voltage V REF 5.5V VIN 36V 1.202 1.222 1.239 V High Side Switch-On Resistance R DS(ON)1 -- 110 160 m Low Side Switch-On Resistance R DS(ON)2 -- 10 15 High Side Switch Leakage V EN= 0V, VSW = 0V -- -- 10 A Current Limit ILIM Duty = 90%, V BOOT SW = 4.8V 6 7.5 9 A Oscillator Frequency
in „Suche Schaltregler“ · Analoge Elektronik und Schaltungstechnik ·
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R7G_-_T7G.pdf
FM Narrow Band • Fully Shielded • Narrow Band Crystal Stabilised • Data Rates Up To 20 Kbits/S • En 300-220 Compliant • Data & AF Out • CD Implemented On Data Output • RSSI Output • Selective Ceramic IF Filters Applications T7/R7 Modules • Wide Operating Voltage (2.2 - 10 Vdc). • Telemetry Systems • Wireless
in „LED als Signalanzeige für Funkempfänger R7G“ · Mikrocontroller und Digitale Elektronik ·
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PDF
uhp-ma_e.pdf
65×70 DP-5800 C PS-4000 JYd120/A.C 65×70 CP-5610 JYd250/A.C UGO X-LITE JYd150/A.C 65×70 ULTRALIGHT DS2 JYd150/A.C UGO S-LITE JYd150/A.C 65×70 65×70 DX2 DLP JYd150/A.C 65×70 SV1 =4331 JYd200/A.C 65×70 DS2 DLP JYs275/A.C XG1 IMPACT JYd200/A.C DS1 DLP JYs275/A.C XGIB JYd200/A.C ULTRALIGHT DX2 JYd150/A.C
in „Beamer 'wiederverwerten'?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF7822.pdf
5.0 6.5 mΩ V GS= 4.5V, D = 15AR on Resistance Gate Threshold Voltage V 1.0 V V = V ,I = 250µA GS(th) DS GS D Drain-Source Leakage DSS 30 V DS= 24V, VGS= 0 Current Current* 150 µA V DS= 24V, VGS= 0, Tj = 100°C Gate-Source Leakage GSS ±100 nA V GS= ±12V Current Total Gate Chg Cont FET QG 44 60 V GS.0V, I
in „Falsches Ladegerät am Notebook :-(“ · Mikrocontroller und Digitale Elektronik ·
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PDF
00643b.pdf
,W sample = ADPCMDecoder( (code>>4)&0x0f ); 0288 00A7 MOVWF 27 0289 0EA7 SWAPF 27 028A 300F MOVLW 0Fh 028B 0527 ANDWF 27,W 028C 390F ANDLW 0Fh 1997 Microchip Technology Inc. DS00643B-page 27 AN643 028D 21A5 CALL 01A5h 028E 1283 BCF STATUS,RP0 028F 00BC MOVWF 3C 0290 0804 MOVF FSR,W 0291 00BD
in „Messdaten Kompression“ · Digitale Signalverarbeitung / DSP / Machine Learning ·
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PDF
ZXM61N02F.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications
in „74LS109 Toggelt nicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
nFET_ZXM61N02FTA.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications
in „ESP8266 Module mit Batterie betreiben - Strom sparen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
nFET_ZXM61N02FTA.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications
in „Wellenlänge Infrarot Leuchtdiode?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
nFET_ZXM61N02FTA.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications
in „3.3V MOSFET ersetzen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
nFET_ZXM61N02FTA-1.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications
in „ATtiny13A: ESP8266 ein- und ausschalten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
nFET_ZXM61N02FTA.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications
in „richtiger n-Kanal MOSFET, 3,3V soll 5V und 100mA schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
nFET_ZXM61N02FTA.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications
in „RaspiPi mit 3,3V einen 5V Kreis wie schalten?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SD211SeriesDSRevA10.pdf
……………………………………..300mW (SD215DE/SST215)………………20V Notes: a.Derate3mW/°Cabove25°C Specifications a LIMITS PARAMETER SYMBOL b TEST CONDITIONS b TYP b 211 Series 213 Series 215 Series UNIT Min Max Min Max Min Max Static Drain - Source VGS V =BS, I =1DµA 35 30 V(BR)DS Breakdown Voltage VGS V =BSV, I =D0 nA 30 10 10 20 Source - Drain V V = V =-5V, I =10 nA 22 10 10 20 Breakdown Voltage (BR)SD GS BD S Drain - Substrate VGB0V, I D 10nA V Breakdown Voltage V(BR)DBO SourceOpen
in „Schaltung mit 2 N-Kanal Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
182853-da-01-en-IRLR_8103V.pdf
= 0, DS GS Tj = 100°C Gate-Source Leakage IGSS ±100 nA VGS = ±20V Current Total Gate Chg Cont FET Q 27 V =5V, I =15A, V =16V G GS D DS Total Gate Chg Sync FET Q 23 V = 5V, V < 100mV G GS DS Pre-Vth Q GS1 4.7
in „Drehzahlmesser für Drehbank“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SIM300_ATC_V2.03.pdf
numeric equivalents 2.2.27ATX Modify the description of atx 2.2.29AT&C Modify the description of at&c SIM300_ATC_V2.03 2 26.03.2009 SIM300AT Commands Set 2.2.30AT&D Modify the description of at&d 2.2.35AT+DS Modify the value range of parameters 2.2.36AT+GCAP Add the description of +CGSM, +FCLASS, +DS 2.2.43AT
in „GSM-Modem IMEI plötzlich gesperrt“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SIM300_ATC_V2.03.pdf
numeric equivalents 2.2.27ATX Modify the description of atx 2.2.29AT&C Modify the description of at&c SIM300_ATC_V2.03 2 26.03.2009 SIM300AT Commands Set 2.2.30AT&D Modify the description of at&d 2.2.35AT+DS Modify the value range of parameters 2.2.36AT+GCAP Add the description of +CGSM, +FCLASS, +DS 2.2.43AT
in „GSM Modem +CLIP funktioniert nicht mehr richtig“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LT3800.pdf
a CC BOOST CC DS(ON) voltagecanbeusedtodetermineQ G.Requireddrivecur- normalized R DS(ON) vs Temperature curve in a MOSFET rent for a given FET follows the simple relation: data sheet. GATE = Q G(8V)• O TheC RSS termistypicallysmallerforhighervoltageFETs
in „LT3800 Frage“ · Analoge Elektronik und Schaltungstechnik ·
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Datenblatt_NVSRAM_23LCV1024.pdf
VCC < VBAT Yes V CC VCC > VTRIP, VCC > VBAT Yes V CC 2012 Microchip Technology Inc. Preliminary DS25156A-page 15 23LCV1024 6.0 PACKAGING INFORMATION 6.1 Package Marking Information 8-Lead PDIP (300 mil) Example XXXXXXXX 23LCVB I/Pe3 1L7 XXXXXNNN 0528 YYWW 8-Lead SOIC (3.90 mm) Example: XXXXXXXT 23LCVBI
in „Probleme mit SRAM 23LCV1024“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AP5724_Backlightdriver.pdf
n t 500 r e u 0.6 r 400 C C n 0.4 n 300 o e t s 200 h 0.2 i S Q 100 0 0 2.5 3 3.5 4 4.5 5 5.5 V IN(V) 2.5 3 3.5 4 4.5 5 5.5 V IN(V) V INvs. Frequency V INvs. Max Duty 1.25 100 ) 1.2 H ) 95 M ( y 1.15 t n u 90 u x q 1.1 a r M F 1.05 85 1 80
in „Fehlersuche Backlightdriver startet nicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
1811070920_CET-Chino-Excel-Tech-CEG8205A_C154283.pdf
CEG8205A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, R DS(ON)= 25mW @V GS= 4.5V. R = 35mW @V = 2.5V. DS(ON) GS Super High dense cell design for extremely low RDS(ON). High power and current handing capability. D 1 8 D Lead free product is acquired. S1 2 7 S
in „Verbraucher mit Attiny45 über Mosfet zuschalten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PVLogger_v0.5_St__ckliste.pdf
DIP40600 1 IC2 LM258AN DIP8300 1 IC3 LM7805CT to220 1 IC5 LD1117V33 TO-‐220 1 IC6 MAX232E DIP16300 1 IC7 DS1307 DIP8300 1 IC8 RIBBON_10V FKV10SN 3 ISP,JTAG,LCD RIBBON_26V FKV26SN 1 J2 HDR1X2 SMK2R5MM_B 1 J5 HDR1X4 HDR1X4 1 J6 10uH 10% IND1250-‐650X250 1 L1 1kOhm 5% RES900-‐300X200 14 R1,R2,R3,R4,R5,R6,R7
in „Reset durch Stack overflow?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AO4410.pdf
Field Effect Transistor General Description Features The AO4410 uses advanced trench technology to V DS(V) = 30V provide excellent DS(ON) shoot-through immunity, ID= 18A (VGS = 10V) body diode characteristics and ultra-low gate R DS(ON) 5.5mΩ (V GS= 10V) resistance. This device is ideally suited for use
in „Falsches Ladegerät am Notebook :-(“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MIC5233-3.3YS-microchip-20221000.pdf
DS20006033E-page 19 MIC5233 NOTES: DS20006033E-page 20 2018-2022MicrochipTechnologyInc.anditssubsidiaries MIC5233 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery
in „STM32F302C8T6 Schaltplanüberprüfung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM78xx__Fixspannungsregler.pdf
Performance Characteristics 8 X X Maximum Average Power Dissipation Maximum Average Power Dissipation DS007746-5 DS007746-6 Peak Output Current Output Voltage (Normalized to 1V at T J 25˚C) DS007746-7 DS007746-8 Ripple Rejection Ripple Rejection DS007746-9 DS007746-10 5 www.national.com X X 7 Typical Performance Characteristics (Continued) M L Output Impedance Dropout Voltage DS007746-11 DS007746-12 Dropout Characteristics Quiescent Current DS007746-13 DS007746-14 Quiescent Current DS007746-15 www.national.com 6 M 7 Physical Dimensions inches (millimeters) unless otherwise noted
in „Spannungsversorgung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
78XX_05_12_15.pdf
Performance Characteristics 8 X X Maximum Average Power Dissipation Maximum Average Power Dissipation DS007746-5 DS007746-6 Peak Output Current Output Voltage (Normalized to 1V at T J 25˚C) DS007746-7 DS007746-8 Ripple Rejection Ripple Rejection DS007746-9 DS007746-10 5 www.national.com X X 7 Typical Performance Characteristics (Continued) M L Output Impedance Dropout Voltage DS007746-11 DS007746-12 Dropout Characteristics Quiescent Current DS007746-13 DS007746-14 Quiescent Current DS007746-15 www.national.com 6 M 7 Physical Dimensions inches (millimeters) unless otherwise noted
in „7812 Spannungsregler nur 5V“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
EMB20P03G.pdf
J On‐State Drain Current 1 I V = ‐5V, V = ‐10V ‐10 A D(ON) DS GS 1 Drain‐Source On‐State Resistance R DS(ON) VGS= ‐10V, I D ‐10A 17.5 20 mΩ V GS ‐4.5V, I D ‐7A 26 35 1 Forward Transconductance gfs V DS ‐5V, I D ‐10A 24 S DYNAMIC Input Capacitance C iss 1407 V = 0V, V = ‐15V, f = 1MHz Output Capacitance C oss GS DS 208 pF Reverse Transfer Capacitance C rss 164 Gate Resistance Rg V GS 15mV, V = 0DS f = 1MHz 4.5 Ω Total Gate Charge 1,2 Q gV GS0V) 20.3 Q g VGS4.5V ) V DS = ‐15V, V GS‐10V, 9.8 I = ‐10A nC Gate‐Source
in „Logo & Bezeichnung von defektem IC gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
GWS6967.pdf
designed for Li-Ion battery packs and battery switch applications G2 • TSSOP-8 package S2 Features • r DS(ON)= 24mΩ typical at 4.5 Volts TSSOP-8 • r DS(ON)= 37mΩ typical at 2.7 Volts NC NC 1 8 S1 2 S YW2017 7 S2 S1 3 LW X 6 S2 4 6967 5 G1 G2 Top view YWWLLX = assembly year, week and lot number, full or partial
in „Bauteilsuche Hexfet? Hilfe“ · Mikrocontroller und Digitale Elektronik ·
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PDF
nFET_ZXM61N02FTA.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications
in „Kann diese Schaltung den 74HC132 killen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
NTD4963N-D.PDF
C ISS 1035 Output Capacitance COSS V = 0 V, f = 1.0 MHz, = 12 V 220 pF GS DS Reverse Transfer Capacitance CRSS 115 Total Gate Charge QG(TOT) 8.1 Threshold Gate Charge Q G(TH) 1.2 V = 4.5 V, V = 15 V, I = 30 A nC Gate−to−Source Charge Q GS GS DS D 3.5 Gate−to−Drain Charge Q GD 3.5 Total Gate Charge QG(TOT) V GS= 10 V, DS = 15 V,DI = 30 A 16.2 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time d(ON) 12 Rise Time r 20 VGS = 4.5 V,DS = 15 V, ns Turn−Off Delay Time td(OFF) ID = 15 A, G = 3.0 W 14 Fall Time f 3 5. Pulse
in „Vergleichsmosfet NTD 4963N“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DG441-DG442.pdf
redesigned DG441/DG442 analog switches now feature on-resistance matching (4Ω max) between ♦ Improved r DS(ON) Match Between Channels(4Ωmax) 4 switches and guaranteed on-resistance flatness over 4 ♦ Guaranteed r FLAT(ON) Over Signal Range (9Ωmax) the signal range (9Ω max). These low on-resistance 1 switches
in „Was bedeutet normaly closed switch“ · Mikrocontroller und Digitale Elektronik ·
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Datei
freq.txt
------ dir_daten SEGMENT DATA ; deklariere Datensegment RSEG dir_daten ; waehle Datensegment SUBL: DS 1 ; Sub Low ist die Variable, die das zwischenergebniss der Lowbyt subtraktion zwischenspeichert FHI : DS 1 ; Variable für den Wert von Timer1 High FLO : DS 1 ; Variable für den Wert von Timer1 Low IMPL: DS 1 ; Variable für den Wert von Timer0 Low IMPH: DS 1 ; Variable für den Wert von Timer0 High ; ;------------------------------------------------------------------------------ ; Wertzuordnung ;--------
in „Frequenzüberprüfung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRFP_3703.pdf
D ––– 2.8 3.9 V GS= 7.0V, D = 76A V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D ––– ––– 20 µA V DS= 24V, VGS= 0V DSS Drain-to-Source Leakage Current ––– ––– 250 V DS= 24V, VGS= 0V, TJ= 150°C IGSS Gate-to-Source Forward Leakage ––– ––– 200 V GS= 20V Gate-to-Source Reverse Leakage
in „[Projekt] Einstellbares Netzteil 12V/60A auf 0,5-2,5V/250A“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
SPP80N06S2L-07.pdf
h 2 3.23.5 3.8 4.0 4.55.0 10.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 00 20 40 60 80 A 120 V I DS D 7 Typ. transfer characteristics 8 Typ. forward transconductance I = f ( V ); V ≥ 2 x I x R g = f(I ); T=25°C D GS DS D DS(on)max fs D j parameter: t = p0 µs parameter: g fs 160 110 S A 90 120 80 s
in „Transistor (Mosfet) Temperatur“ · Analoge Elektronik und Schaltungstechnik ·
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BP3266A-BPS.pdf
是一款高效率、高 PF 值，支持可控硅调 ◼ 支持可控硅调光 光的 LED 驱动芯片。芯片工作在电感电流临界连 ◼ 闭环恒流控制 续模式，适用于 Boost 结构的 LED 驱动电源。 ◼ 内部集成 300V 功率管 BP3266A 芯片内部集成 300V 功率开关，采用专利 ◼ 临界连续电流控制模式 ◼ 芯片超低工作电流 的源极驱动和电流检测方式，芯片的工作电流极 ◼ ±5% LED 输出电流精度 低，只需要很少的外围元件，即可实现优异的恒 ◼ 线电压前馈补偿 流特性，极大的节约了系统成本和体积。 ◼ LED 开路保护 ◼ CS 电阻短路保护 BP3266A具有多重保护功能， 包括LED开路保护
in „Welche Netzteile in Energiesparlampen ?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
STS7C4F30_STripFET.pdf
RDS(on) D STS7C4F30L(N-Channel) 30 V <0.022 7 A STS7C4F30L(P-Channel) 30 V <0.080 4 A ■ TYPICAL R DS(on) (N-Channel) = 0.018 ■ TYPICAL R DS(on) (P-Channel) = 0.070 ■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY ■ LOW THRESHOLD DRIVE DESCRIPTION SO-8 This Power MOSFET is the latest development
in „[S] STS7C4F30L StripFET“ · Markt ·
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PDF
Freq-Spannungswandler.pdf
Output vs Temperature 2 9 7 DS007942-40 DS007942-41 DS007942-42 Normalized Tachometer Tachometer Currents I 2 Tachometer Currents I 2 Output vs Temperature and I3vs Supply Voltage and I3vs Temperature DS007942-43 DS007942-44 DS007942
in „LM2907/17 Frequenz-Spannungswandler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Freq-Spannungswandler.pdf
Output vs Temperature 2 9 7 DS007942-40 DS007942-41 DS007942-42 Normalized Tachometer Tachometer Currents I 2 Tachometer Currents I 2 Output vs Temperature and I3vs Supply Voltage and I3vs Temperature DS007942-43 DS007942-44 DS007942
in „Frequenz Spannungswandler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
NSC.pdf
Output vs Temperature 2 9 7 DS007942-40 DS007942-41 DS007942-42 Normalized Tachometer Tachometer Currents I 2 Tachometer Currents I 2 Output vs Temperature and I3vs Supply Voltage and I3vs Temperature DS007942-43 DS007942-44 DS007942
in „Frequenz Spannungswandler Beschaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PIC_Applikationen.PDF
task 2. time3 ds 1 ; Timer for task 3. time4 ds 1 ; Timer for task 4. time5 ds 1 ; Timer for task 5. time6 ds 1 ; Timer for task 6. time7 ds 1 ; Timer for task 7. ; Remember to change device info if using a different
in „MATRIX-Tastatur“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Infineon-IPP_B_I70P04P4_09-DS-v01_03-en.pdf
10-6 10-5 10-4 10-3 10-2 10-1 100 -V DS[V] tp[s] Rev. 1.3 page 4 2011-02-14 IPB70P04P4-09 IPI70P04P4-09, IPP70P04P4-09 5 Typ. output characteristics 6 Typ. drain-source on-state resistance ID= f(V DS); Tj= 25 °C; SMD R DS(on)= (D ); Tj= 25 °C; SMD parameter: V GS parameter: V GS 300 60 -10V -5V -5.5V 50 -7V 40 200 ] W ] [ [ n 30 ID -6.5V S - D R 100 -6V 20 -6V -5.5V -6.5V 10 -7V -10V -5V 0 0 0 36 72 0 1 2 3 4 5 6 -V [V] -I [A] DS D 7 Typ. transfer characteristics 8 Typ. drain-source
in „MOSFET als Lastschalter“ · Analoge Elektronik und Schaltungstechnik ·
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FQPF9N25C-1120274.pdf
Current and Gate Voltage Variation with Source Current and Temperature 2000 12 CissgsC gd dshorted) C =C ds gd V =50V rss gd 10 DS V V =125V 1500 [ DS ] g VDS200V F l 8 [ o c Ciss e a1000 r 6 c Coss o a - a t 4 C 500 Crss a , ※ Notes: G 2 1.GS=0V V 2.f =1MHz ※ Note:DI =8.8A 0 0 10-1 100 101 0 5 10 15 20 25
in „Mosfet defekt“ · Analoge Elektronik und Schaltungstechnik ·
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projekt_snt.pdf
Spannungsfestigkeit eingeplant. Es standen zwei Bauteile zur Verfügung: • IXFX26N90 R ≈ 0,3Ω R ≈ 0,54Ω C ≈ 700pF DS_On(25°C) DS_On(125°C) DS • 2SK1489 R DS_On(25°C)1,0Ω RDS_On(125°C)1,84Ω C DS≈ 300pF 4.7.2 Durchlaßverluste Zur Berechnung der Durchlaßverluste wurden die primären Effektivströme bei maximaler und minimaler
in „2kW Gleichstromleistung“ · Mikrocontroller und Digitale Elektronik ·