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Datei
power-one75WBB.txt
-14 BF=129.119 NF=0.85 VAF=31.1252 +IKF=0.990922 ISE=2.47498e-10 NE=1.89002 BR=1.01252 +NR=0.924456 VAR=254.624 IKR=2.70227 ISC=2.47498e-10 +NC=2.90624 RB=3.66609 IRB=0.1 RBM=0.1 +RE=0.000352673 RC=0.0764459 XTB=1.34801 XTI=1.07207 +EG=1.206 CJE=9.03089e-08 VJE=0.513954 MJE=0.59999
in „Suche Datenblatt/Quelle für Motorola 171-10245 Spannungsregler (?)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DAC7552.pdf
Drawing Qty DAC7552IRGTR ACTIVE QFN RGT 16 3000 Green (RoHS & CU NIPDAU Level-3-260C-168 HR no Sb/Br) DAC7552IRGTRG4 ACTIVE QFN RGT 16 3000 Green (RoHS & CU NIPDAU Level-3-260C-168 HR no Sb/Br) DAC7552IRGTT ACTIVE QFN RGT 16 250 Green (RoHS & CU NIPDAU Level-3-260C-168 HR no Sb/Br) DAC7552IRGTTG4 ACTIVE
in „Problem mit DAC7552“ · Mikrocontroller und Digitale Elektronik ·
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RF12B-IC-2.pdf
Quality factor of the output In 433 MHz band 13 15 17 Q o capacitance In 868 / 915 MHz bands 8 10 12 100 kHz from carrier, in 868 MHz band -80 L out Output phase noise 1 MHz from carrier, in 868 MHz band dBc/Hz -103 BR FSK bit rate Via internal TX data register 172 kbps TX BRA FSK bit rate TX data connected
in „Funk SI4420 kein Empfang“ · Mikrocontroller und Digitale Elektronik ·
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0fr3wdgekryxzkwteer8ge0a7f7y.pdf
output. 4/9 USBUFxxW6 Fig. A5: USBUFxxW6 ESD clamping behavior Rg S1 Rt S2 Rd Rd Vinput V PP Rload V BR Voutput V BR Device to be ESD Surge USBUF01W6 protected Fig. A6: Measurement board ESD SURGE TEST BOARD 16kV U Air U x Discharge Vin Vout To have a good approximation of the remaining voltages at both
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1809271221_Texas-Instruments-DAC5571IDBVR_C24061.pdf
High-speed mode, CB- 100 pF max 10 80 ns High-speed mode, C - 400 pF max 20 160 ns B FCL Fall Time of SCL Signal Standard mode 300 ns Fast mode 20 + 0.1CB 300 ns High-speed mode, C - 100 pF max 10 40 ns B High-speed mode, CB
in „Hilfe bei der Berechnung (Voltage Divider)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AD8221-Datenblatt.pdf
specifications 120 80 dBminimum CMRRto10 kHz(G= 1) 110 825 kHz, –3 dBbandwidth (G=1) AD8221 2V/µs slew rate 100 Low noise 90 8 nV/√Hz, @1 kHz,maximum input voltage noise B ( COMPETI TOR 1 0.25 µV p-p input noise (0.1Hzto10 Hz) R 80 M High accuracydc performance(AD8221BR) C 70 90 dBminimum CMRR(G= 1) 25 µV maximuminput
in „InAmp mit single supply möglich?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
tFXKSKyORc24h2V2.pdf
BUTTON 100-7KA-2911 1 38 GREAT CIRCULAR BUTTON 100-7KB-2911 1 39 GREAT CIRCULAR BUTTON 100-7KC-2911 1 40 VINYL CIRCULAR BUTTON 100-7KF-2911 2 41 CENSOR CIRCULAR BUTTON 100-7KG-2911 2 42 SLIP CIRCULAR BUTTON 100-7KH-2911 2 43 ROTATE KNOB 100-6K2-3080 1 44 AUTO BUTTON 100-7K-3202 2 45 JW LENS(ABS PA-758) 100-7K-3203 12 46 BOARD 100-7K-3206 4 47 PITCH LENS 100-7K-3207 4 48 PLAY KNOB 100-7K-3208 2 49 2 KEY RECTANGLE BUTTON 100-7K-3212 2 50
in „Risiko | Nicht?“ · Offtopic ·
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PDF
irl630.pdf
Recovery Time ––– 230 350 ns T J 25°C, IF= 9.0A Qrr Reverse Recovery Charge ––– 1.7 2.6 µC di/dt = 100A/µs on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on isS+LD)nated by L Notes: Repetitive rating; pulse width limited by ISD≤ 9.0A, di/dt ≤ 120A/µsDD≤ V(BR)DSS max. junction temperature
in „Kontrolle der Kühlkörperberechnung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BF1009SW_2001_INF.pdf
Parameter Symbol Values Unit min. typ. max. DC characteristics Drain-source breakdown voltage 16 - - V V(BR)DS ID= 300 µA, V G1S = 0 V, G2S = 0 V Gate 1 - source breakdown voltage +V(BR)G1SS 8 - 12 +IG1S = 10 mA, VG2S = 0 V, VDS = 0 V Gate 2 source breakdown voltage ±V 10 - 16 (BR)G2SS ±IG2S = 10 mA, VG1S
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Bild
Innenansicht einer Leiterplatte in einem Gehäuse
SNT-74 ES T85 BR100 C104 BR53 BR50 C21 REG-NF 754 R38 Heinz-Josef
in „Siemens Backofen Steuerung LCD am Bedienteil“ · Mikrocontroller und Digitale Elektronik · · Platinenfotos
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PDF
ads830.pdf
Drawing Qty ADS830E ACTIVE SSOP/ DBQ 20 56 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR QSOP no Sb/Br) ADS830E/2K5 ACTIVE SSOP/ DBQ 20 2500 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR QSOP no Sb/Br) ADS830E/2K5G4 ACTIVE SSOP/ DBQ 20 2500 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR QSOP no Sb/Br) ADS830EG4
in „ads830 ad wandler“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ads831.pdf
Drawing Qty ADS831E ACTIVE SSOP/ DBQ 20 56 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR QSOP no Sb/Br) ADS831E/2K5 ACTIVE SSOP/ DBQ 20 2500 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR QSOP no Sb/Br) ADS831E/2K5G4 ACTIVE SSOP/ DBQ 20 2500 Green (RoHS & CU NIPDAU Level-2-260C-1 YEAR QSOP no Sb/Br) ADS831EG4
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FMMT620.pdf
specified Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 100 180 − V IC= 100µA Collector-Emitter Breakdown Voltage (Note 5) V(BR)CEO 80 110 − V IC= 10mA Emitter-Base Breakdown Voltage 7 8 V V (BR)EBO − IE= 100µA Collector Cut-off Current ICBO − − 100 nA V CB= 80V Emitter Cut-off Current I − − 100 nA V = 5.5V EBO EB Collector Emitter Cut-off Current ICES − − 100 nA V CES = 80V I = 10mA, V = 2V 200 450 − C CE 300 450 900 IC= 200mA, V CE= 2V 110 170 − IC = 1A, CE = 2V Static Forward Current Transfer
in „SMD Transistor für 5V/0,5A mit geringem Spannungsabfall“ · Analoge Elektronik und Schaltungstechnik ·
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std888.pdf
Conditions Min. Typ. Max. Unit Collector cut-off currentCB = -30V -10 µA ICBO (I =0) V = -30V; T = 100°C 100 µA E CB C I Emitter cut-off current V = -6V -10 µA EBO (C =0) EB Collector-emitter V (BR)CEO(2) breakdown voltage C = -10mA -30 V (B =0) Collector-base breakdown voltage V (BR)CBO C = -100µA -45 V (E =0) Emitter-base breakdown V (BR)EBO voltage (I =0) E = -100µA -6 V C V (2) Collector-emitter C = -0.5A IB= -5mA -0.15 V CE(sat) I = -2A I = -50mA -0.35 V saturation voltage C B C = -5A IB= -250mA -0.7 V C = -6A IB= -250mA -0.7 V I
in „SMD Transistor (Leistung) bei Reichelt“ · Analoge Elektronik und Schaltungstechnik ·
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TRIACS_FOR_MICROWAVE_OVEN.pdf
: A Magnetic field H versus induction B (continous rating) B Saturationinduction BS Bmax = 2 Bn - Br. In the circuits controlled by a triac, switching OFF occurs when the current is at zero. Thus The overload is lower than previously but still the induction has a remanent value Br (positive remains
in „Optokoppler + Triac = Rauch?“ · Mikrocontroller und Digitale Elektronik ·
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MR2535L-D.PDF
C) vF − 1.1 V Reverse Current (VR= 20 Vdc, C = 25°C) IR − 200 nAdc Breakdown Voltage (Note 2) (I = 100 mAdc, T = 25°C) V 24 32 V R C (BR) Breakdown Voltage (Note 2) (I = 90 A, T = 150°C, PW = 80 ms) V − 40 V R C (BR) Breakdown Voltage Temperature Coefficient V − 0.096 %/°C (BR)TC (Note 1) Forward Voltage
in „Load Dump Schutz im 12 Volt Bordnetz“ · Fahrzeugelektronik ·
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PDF
MR2535L.pdf
C) vF − 1.1 V Reverse Current (VR= 20 Vdc, C = 25°C) IR − 200 nAdc Breakdown Voltage (Note 2) (I = 100 mAdc, T = 25°C) V 24 32 V R C (BR) Breakdown Voltage (Note 2) (I = 90 A, T = 150°C, PW = 80 ms) V − 40 V R C (BR) Breakdown Voltage Temperature Coefficient V − 0.096 %/°C (BR)TC (Note 1) Forward Voltage
in „Unbekantes Bauteil im Wechselrichter“ · Analoge Elektronik und Schaltungstechnik ·
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opa129.pdf
A OPEN-LOOP FREQUENCY RESPONSE POWER SUPPLY REJECTION vs FREQUENCY 140 140 120 45 B 120 Gain ) ( B 100 e o 100 ( r c i θ e j a 80 90 t R 80 e h l +PSRR a 60 Phase S p 60 o Margin s u –PSRR V 40 ≈90° 135 u r P w 40 P 20 20 0 180 0 1 10 100 1k 10k 100k 1M 10M 1 10 100 1k 10k 100k 1M 10M Frequency (Hz)
in „Guarding in Eagle“ · Platinen ·
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Datei
Webserver_Test_Download.ino
'0' cellspacing='0'>" "<tbody>" //"<!-- Zeile 1 -->" "<tr><td bgcolor='#ffccff' height='20' width='100'><br>" "</td><td>xxxx</td><td>xxxx</td><td>xxxx</td><td>xxxx</td>" "<td>xxxx</td><td>xxxx</td><td width='100'><br></td>" "<td bgcolor='#ccccff'>xxx</td>" "<td bgcolor='#ccccff'>xxx</td>" "<td bgcolor
in „Leichte Probleme mit Arduino Webserver und HTML-Implementierung“ · Mikrocontroller und Digitale Elektronik ·
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BC549-550.pdf
A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)CEO Vdc (I = 10 mAdc, I = 0) BC549B,C 30 — — C B BC550B,C 45 — — Collector–Base Breakdown Voltage V(BR)CBO Vdc (C = 10 Adc, E = 0) BC549B,C 30 — — BC550B,C 50 — — Emitter–Base Breakdown Voltage V(BR)
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BDA-03-04-23-BedanLGRA.pdf
DC - Spannungen an die DIN-Buchse angelegt werden: • Abgriff am Ausgang des Netzteilsteckers: 6 V ( BR 4 ) AC • Abgriff direkt nach dem Gleichrichter: 6 VDC ( BR 2 oder 5 ) • Abgriff am Spannungsregler-IC 3 V stabilisiert ( BR3 ) DC 1.6 Persönliche Notizen _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _
in „Licht per Funkschalter anschalten.“ · HF, Funk und Felder ·
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STP6NK90ZFP.pdf
resistive load switching times Figure 18. Test circuit for gate charge behavior VDD 12 V 47 kΩ 1 kΩ 100 nF R L 2200 3.3 μF μF + VDD VD G = CONST 100 Ω D.U.T. V GS pulse width + V GS RG D.U.T. 2.7 kΩ 2200 VG pulse width μF 47 kΩ 1 kΩ AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load switching
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PDF
STP6NK90ZFP.pdf
resistive load switching times Figure 18. Test circuit for gate charge behavior VDD 12 V 47 kΩ 1 kΩ 100 nF R L 2200 3.3 μF μF + VDD VD G = CONST 100 Ω D.U.T. V GS pulse width + V GS RG D.U.T. 2.7 kΩ 2200 VG pulse width μF 47 kΩ 1 kΩ AM01468v1 AM01469v1 Figure 19. Test circuit for inductive load switching
in „Unterschiedliche Power MOSFET kompatibel?“ · Analoge Elektronik und Schaltungstechnik ·
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TLC5940.pdf
−kΩ s 2−k e i c 0.64−kΩ − r 0.48−kΩ e TLC5940PWP f 0.38−kΩ w PowerPAD−Unsoldered e P R 0.32−kΩ 1−k 100 0 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 O ! Output−Current ! mA TA! Free-Air−Temperature ! C Figure 1. Reference Resistor vs Output Current Figure 2. Power Dissipation Rate vs Free-Air Temperature
in „Vorschläge für Led-Treiber?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TLC5940.pdf
−kΩ s 2−k e i c 0.64−kΩ − r 0.48−kΩ e TLC5940PWP f 0.38−kΩ w PowerPAD−Unsoldered e P R 0.32−kΩ 1−k 100 0 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 O ! Output−Current ! mA TA! Free-Air−Temperature ! C Figure 1. Reference Resistor vs Output Current Figure 2. Power Dissipation Rate vs Free-Air Temperature
in „Parallel Nutzung von Stromsenken“ · Analoge Elektronik und Schaltungstechnik ·
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msp430f5529.pdf
Sb/Br) MSP430F5515IPNR ACTIVE LQFP PN 80 1000 Green (RoHS CU NIPDAU Level-3-260C-168 HR & no Sb/Br) MSP430F5517IPN ACTIVE LQFP PN 80 119 Green (RoHS CU NIPDAU Level-3-260C-168 HR & no Sb/Br) MSP430F5517IPNR
in „Fragen zu ADC“ · Mikrocontroller und Digitale Elektronik ·
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Datei
LM386.lib.txt
ddnpn NPN(Is=10f Xti=3 Eg=1.11 Vaf=100 + Bf=400 Ise=0 Ne=1.5 Ikf=0 Nk=.5 Xtb=1.5 Var=100 + Br=1 Isc=0 Nc=2 Ikr=0 Rc=0 Cjc=2p Mjc=.3333 + Vjc=.75 Fc=.5 Cje=5p Mje=.3333 Vje=.75 Tr=10n + Tf=1n Itf=1 Xtf=0 Vtf=10) .MODEL ddpnp PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 + Bf=200 Ise=0 Ne=1.5 Ikf=0 Nk=.5 Xtb=1.5 Var=100 + Br=1 Isc=0 Nc=2 Ikr=0 Rc=0 Cjc=2p Mjc=.3333 + Vjc=.75 Fc=.5 Cje=5p Mje=.3333 Vje=.75 Tr=10n + Tf=1n Itf=1 Xtf=0 Vtf=10) .ENDS
in „PSPICE LM386“ · Analoge Elektronik und Schaltungstechnik ·
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NUD4700-D.PDF
Unless otherwise noted: T = 25°C) A Characteristics Symbol Min Typ Max Unit Off−State Current ILEAK − 100 250 mA (V = 5 V) Anode Breakdown Voltage V 5.5 − 7.5 V (BR) (BR = 1 mA) Holding Current H − 6.0 12 mA (VAnode= 10 V, initial100 mA) Latching Current IL − 35 70 mA (VAnode= 10 V) On−State Voltage (T
in „28 LEDs ansteuern“ · Mikrocontroller und Digitale Elektronik ·
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m48t08-150pc1.pdf
M48T08, M48T08Y, M48T18 Table 3. READ Mode AC Characteristics M48T08/M48T18/T08Y Symbol Parameter (1) –100/–10 (T08Y) –150/–15 (T08Y) Unit Min Max Min Max AVAV READ Cycle Time 100 150 ns t Address Valid to Output Valid 100 150 ns AVQV tE1LQV Chip Enable 1 Low to Output Valid 100 150 ns E2HQV Chip Enable
in „parallele SRAM Bausteine (nennt man das so ?) in Bascom“ · Mikrocontroller und Digitale Elektronik ·
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Si_4322.pdf
rejection interferer in the channel -4 dB -2 BER = 10 with continuous wave interferer, BW = 134 kHz, BR 1MHz Blocking ratio BR = 9.6 kbps, δFSK= 80 kHz, 46 dB interferer offset 1 MHz same as above, BR 2MHz Blocking ratio interferer offset 2 MHz 49 dB same as above, BR 5MHz Blocking ratio interferer offset
in „RFM01 NIRQ immer high“ · Mikrocontroller und Digitale Elektronik ·
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adum1200_1201.pdf
PulseWidthDistortion,|t PLH−tPHL4 PWD 40 ns Change vs. Temperature 11 ps/°C Propagation Delay Skew 5 tPSK 100 ns Rev. H | Page 4 of 28 ADuM1200/ADuM1201 Parameter Symbol Min Typ Max Unit Test Conditions Channel-to-Channel Matching 6 PSKCD/tPSKOD 50 ns Output Rise/Fall Time (10% to 90%) R /F 10 ns ADuM120xBR
in „USB-RS232-Konverter mit galvanischer Trennung“ · Mikrocontroller und Digitale Elektronik ·
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BC560C-D.pdf
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage V Vdc (BR)CEO (C = −10 mAdc,BI = 0) −45 − − Collector−Base Breakdown Voltage V(BR)CBO Vdc (C = −10 mAdc,EI = 0) −50 − − Emitter−Base Breakdown Voltage V(BR)EBO −5.0 − − Vdc (E = −10 mAdc,CI = 0) Collector Cutoff
in „Suche Datenblatt Transistor Siemens STr 1602“ · Analoge Elektronik und Schaltungstechnik ·
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Bild
Oszilloskop-Messung von GPIO-Signalen
WA IT H 2.00ms 125MSa/s/ D 10.800000ms T 232 2.48V Horizontal Coupling CH3 Period DC D5 GPIO14 (ModBr TX) [DI] Freq BW Limit 1 OFF Probe 1X Rise Time Invert Fall Time OFF 2 2.00V D7 GPIO13 (ModBr RX) [RO] 2 Tx[DEC] D6 GPIO12 (ModBr TX Ena) [DE/RE] 1 3 0 4 0 1 Width Rx[DEC] 0? 1 1 0 1 Period <200 us +Width <100 us 3 2.00V 4 1.00V
in „Fehlerhafte RO Idle Polarität ESP8266 <- MAX485“ · Mikrocontroller und Digitale Elektronik · · Oszi-Bilder
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Datei
fft2test.bas
- 1 Then k2 = 2 * k nk = n2 - k2 ar = Buffer(k2) + Buffer(nk) ai = Buffer(k2 + 1) - Buffer(nk + 1) br = Buffer(nk) - Buffer(k2) bi = 0-Buffer(nk + 1) - Buffer(k2 + 1) s = Sin(k * PI / n) c = Cos(k * PI / n) cr = br * s - bi * c ci = br * c + bi * s Buffer(k2) = (ar + cr) / 2 Buffer(k2 + 1) = (ai + ci
in „peakfilter im AVR?“ · Mikrocontroller und Digitale Elektronik ·
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lm3478.pdf
no Sb/Br) LM3478QMMX/NOPB ACTIVE VSSOP DGK 8 3500 Green (RoHS CU SN Level-1-260C-UNLIM -40 to 125 SSFB & no Sb/Br) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for
in „Frage zu Datenblatt LM3478“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF7401_IR.pdf
temperature. ( See fig. 11 ) SD ≤ 4.1A, di/dt ≤ 100A/µDD ≤ V(BR)DSS Surface mounted on FR-4 board, t ≤ 10sec. TJ≤ 150°C IRF7401PbF 1000 1000 TOP 7.5V TOP 7.5V 5.0V 5.0V 3.5V 3.5V A 3.0V A 3.0V t 2.0V t 2.5V n BOTTOM 1.5V n BOTTOM 1.5VV r 100 r 100 u
in „IRF7401 - Rds(On)?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
1806052124_Texas-Instruments-TPS7B6933QDCYRQ1_C108471.pdf
voltage, withstands 45 V for 200 ms. 7.2 ESD Ratings VALUE UNIT (1) Human body model (HBM), per AEC Q100-002 ±2000 Electrostatic Other pins ±500 V(ESD) discharge Charged device model (CDM), per V AEC Q100-011 Corner pins (4 pin: 1, 3, and 4; 5 pin: 1, 3, 4, and 5) ±750 (1) AEC Q100-002 indicates HBM stressing
in „3.3V uC LDO mit UVLO, Batterie/Solarbetrieb“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF7314_P-Channel_Dual_20V_5.3A_0.058Ohm.pdf
Reverse Recovery Time ––– 47 71 ns T J 25°C, IF= -2.9A Qrr Reverse RecoveryCharge ––– 49 73 nC di/dt = 100A/µs Notes: Repetitive rating; pulse width limited by SD≤ -2.9A, di/dt ≤ -77A/µDD ≤ V(BR)DSS max. junction temperature. ( See fig. 11 ) TJ≤ 150°C Starting J = 25°C, L = 35mH Pulse width ≤ 300µs; duty cycle ≤ 2%. R = 25 , I = -2.9A. G AS Surface mounted on FR-4 board, t ≤ 10sec. IRF7314 100 100 VGS TOP -7.50V TOP -7.50V -4.50V ) -4.50V A -3.50V A -3.50V t -3.00V t -3.00V n -2.70V e -2.70V r BOTTOM -1.50V r BOTTOM -1.50V u 10 u 10 C C c r u u S S o o - - -1.50V i 1 -1.50V i 1 r r D D ,
in „mit 2,7V schalten“ · Mikrocontroller und Digitale Elektronik ·
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irf7314.pdf
Reverse Recovery Time ––– 47 71 ns T J 25°C, IF= -2.9A Qrr Reverse RecoveryCharge ––– 49 73 nC di/dt = 100A/µs Notes: Repetitive rating; pulse width limited by SD≤ -2.9A, di/dt ≤ -77A/µDD ≤ V(BR)DSS max. junction temperature. ( See fig. 11 ) TJ≤ 150°C Starting J = 25°C, L = 35mH Pulse width ≤ 300µs; duty cycle ≤ 2%. R = 25 , I = -2.9A. G AS Surface mounted on FR-4 board, t ≤ 10sec. IRF7314 100 100 VGS TOP -7.50V TOP -7.50V -4.50V ) -4.50V A -3.50V A -3.50V t -3.00V t -3.00V n -2.70V e -2.70V r BOTTOM -1.50V r BOTTOM -1.50V u 10 u 10 C C c r u u S S o o - - -1.50V i 1 -1.50V i 1 r r D D ,
in „FTDI FT232RL - Probleme mit Platine/Verbinden mit PC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BC547_datasheet.pdf
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage BC546 V(BR)CEO 65 — — V (C = 1.0 mAB I = 0) BC547 45 — — BC548 30 — — Collector–Base Breakdown Voltage BC546 V(BR)CBO 80 — — V (I = 100 Adc) BC547 50 — — C BC548 30 — — Emitter–Base Breakdown Voltage BC546 V 6.0
in „NPN mit PNP Transistor ersetzen für SHARP Pocket-Interface?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Current_Ref._100uA.pdf
CURRENT vs VOLTAGE 101 100.5 100.8 100.4 100.6 100.3 100.4 ) )100.2 µ100.2 A100.1 t ( 25°C e 100 n 100 r r C 99.8 u 99.9 C 99.6 99.8 99.4 –55°C 99.7 99.2 99.6 125°C 99 99.5 0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 Voltage (V) Voltage
in „Stromreferenz Beschaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
4N35-1.pdf
Dark CurrCEt= 30 V, A = 100⋅C) — — 500 A Collector–Base Dark CurreCB = 10 V) TA= 25⋅C ICBO — 0.2 20 nA TA= 100⋅C 100 — Collector–Emitter Breakdown VolCage (I = 1 mA) V(BR)CEO 30 45 — V Collector–Base Breakdown VoltaCe (I = 100 A) V(BR)CBO 70 100 — V Emitter–Base Breakdown Voltage (I = 100 A) V 7 7.8 — V E (BR)EBO DC Current GainC(I = 2 mACEV= 5 V) hFE — 400 — — Collector–Emitter Capacitance (f = CEM= 0)V CCE — 7 — pF Collector–Base
in „Vorwiderstand für eine Led eines Optokopplers“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Littelfuse_TVS_Diode_P6KE_Datasheet.pdf
V=0V C ( Bi-direc nalV=0V c 1000.00 a e 10 p ) l ( 100.00 a C r Uni-dire onal h Bi-direc nal t V=VR i 1 10.00 n r T 1.00 1.00 10.00 100.00 1000.00 0.1 0.01 0.1 1 10 100 1000 VBR—ReverseBreakdownVoltage(V) TP- Pulse Duration (s) Figure 7 - Maximum Non-Repetitive
in „PhotoMos mit TVS schützen ?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irg4bc30w.pdf
Characteristics @ T = 25°C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltag600 — — V VGE = 0V,CI = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltag18T — — V VGE = 0V,CI = 1.0A ∆V(BR)CESJ Temperature Coeff. of Breakdown Volta—e 0.34
in „Ersatz für IGBT G4BC30W“ · Analoge Elektronik und Schaltungstechnik ·
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Motorola_tech_info.pdf
Emitter, 5–Collector, 6–Base (Style 1) Current Transfer tr f or ton */off Ratio (CTR) VCE(sat) Typ VF V(BR)CEO % I V Volts F C IC V R I Volts Volts I @ F CE @ @ CC L F @ F Device Min mA Volts Max mA mA s mA Volts mA Min Max mA TIL111 8 16 0.4 0.4 16 2 5/5 2 10 100 30 1.4 16 4N27 10 10 10 0.5 50 2 1.2/1.3
in „Isolationsspannung zwischen Doppel-FETs in einem SO8-Gehäuse“ · Analoge Elektronik und Schaltungstechnik ·
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spp20n60s5_eng_tds.pdf
V ) tot C D DS parameter : D = 0 , T =25°C C SPP20N60S5 102 240 W A 200 180 101 t 160 t D P I 140 100 120 tp = 0.001 ms 100 tp = 0.01 ms 80 tp = 0.1 ms tp = 1 ms 60 10 -1 DC 40 20 -2 00 20 40 60 80 100 120 160 10 100 10 1 102 10 3 °C V TC VDS 3 Transient thermal impedance 4 Typ. output characteristic
in „Mosfet defekt - kann der Ersatztyp verwendet werden?“ · Analoge Elektronik und Schaltungstechnik ·
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IRG4BC30U_IR.pdf
Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Volta600 — — V V = 0V, I = 250µA (BR)CES GE C V(BR)ECS Emitter-to-Collector Breakdown Voltag18T — — V VGE = 0V,CI = 1.0A ∆V /∆T Temperature Coeff. of Breakdown Volta—e 0.63 — V/°C V = 0V, I = 1.0mA (BR)CESJ GE C — 1.95 2.1 IC= 12A VGE =
in „Ersatz für IGBT G4BC30W“ · Analoge Elektronik und Schaltungstechnik ·
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wama-online-dokumentation-public.pdf
0,17 116,0000-HC49U-S Quarz 16Mhz http://www.reichelt.de/?ARTICLE=32852 C3-5,C7-10 0,42 0,06 7KERKO 100N Kerko 100nF http://www.reichelt.de/?ARTICLE=9265 L1 0,17 0,17 1SMCC 10µ Induktivitaet http://www.reichelt.de/?ARTICLE=18193 IC1 3,90 3,90 1ATMEGA 32-16 DIP ATmega32 DIL http://www.reichelt.de/?ARTICLE
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PALdec.pdf
470pF +12V< 3 1nF 11 1uF 1 12 4V 1V 2V 1M 390R 33R 33R +12V 1 8usec 4usec ^ 2 3 220k 33k 1N4148 +12V 100n 22uF 100n DL 2 ^ 16V 33k v 1k 3 +12V 100n 1 711 4 ^+12V 100k 560R 5k6 1N4148 100n 4 DL 4 10 15 16 100n 10uH 10uH 711 5k6 10k 100n 11 Hor.Sync 9 6 5 1 15 18 14 13 12 17 Super-Sandcastle 1/4 3k3 CD4070
in „Alcatel Terminatel 258 Composite Video Signal“ · Analoge Elektronik und Schaltungstechnik ·
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2xNMOS_IRF7103.pdf
40V, VGS= 0V DSS ––– ––– 25 VDS = 40V, GS = 0V, J = 55 °C GSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = - 20V Qg Total Gate Charge ––– 12 30 D = 2.0A Qgs Gate-to-Source Charge ––– 1.2 ––– nC VDS = 25V Qgd Gate-to-Drain ("Miller") Charge ––
in „Spannungspeaks / Ripple durch Schaltregler. Abhilfe?“ · Analoge Elektronik und Schaltungstechnik ·
