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gdm12864a.pdf
specified about current flowing throuSS.V Internal oscillation circuit: Rf=47kO, cf=20pF Each terminals of DS1, DS2, FS, SHL, and MS is connected to DD and out is no load. *4. This value is specified about current flowing throuSS.V Each terminals is DS1, DS2, FS, SHL, PCLK2 and CR is connected to VDD,MS is connected
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Datei
Main.c
include <stdio.h> #include <user_io.c> #include <avr/signal.h> #include <avr/interrupt.h> #include <ds18s20.h> #include <ds18s20.c> /* FCPU = 8 MHz _delay_ms = 32,77 ms _delay_us = 96,00 us*/ float temperature=0; uint8_t t1=13,t2=13,t3=10,t4=11; int main (void) { // PORTA (LED-OUT) DDRA = 0xFF; PORTA
in „float-wert umwandeln“ · Mikrocontroller und Digitale Elektronik ·
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MCP794xx.pdf
This parameter is not tested but ensured by characterization. 2011-2018 Microchip Technology Inc. DS20005009G-page 5 MCP79400/MCP79401/MCP79402 FIGURE 1-3: I C BUS TIMING DATA 5 4 2 D3 SCL 7 3 SDA 8 9 10 In 6 13 11 12 SDA Out FIGURE 1-4: POWER SUPPLY TRANSITION TIMING VCC V TRIPMAX ) VTRIP(MIN) 15 16
in „MCP794xx EUI-64 Node Adresse“ · Mikrocontroller und Digitale Elektronik ·
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CCP_Tricks.pdf
technique for measuring period with averaging described in Tip #2 is useful for measuring high RPMs. DS41214A-page 12 © 2003 Microchip Technology Inc. Tips ‘n Tricks FIGURE 5-3:LOW RPM T W FIGURE 5-4:HIGH RPM T W © 2003 Microchip Technology Inc. DS41214A-page 13 Tips ‘n Tricks TIP #6 Measuring the Period
in „Lüfter über PWM, Bauteilauswahl?!?“ · Mikrocontroller und Digitale Elektronik ·
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DS100728A_IXTN660N04T4_-1022876.pdf
V V = V , I = 250μA 2.0 4.0 V GS(th) DS GS D I V = 15V, V = 0V nA200 GSS GS DS Applications IDSS VDS = VDSS, GS = 0V 10 A DC-DC Converters and Offi-Line UPS TJ= 150C 1.5 mA Primary-Side Switch RDS(on) VGS = 10V,
in „Suche Power-MosFet für etwa 600A“ · Analoge Elektronik und Schaltungstechnik ·
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Display_Controller.pdf
X 160 SEG MF[2:0] I Manufacturer ID code for reference, suggestion setting [ MF2.MF1.MF0 = 0.0.0 ] DS[1:0] I Display size ID code for reference, suggestion setting [ DS1.DS0 = 1.0 or DS1.DS0 = 0.0] Ver2.3 17/97 2007/1/3 ST7528 MICROPROCESSOR INTERFACE Microprocessor Interface Pin Description Name I/O
in „LCD Controler mit Spannungsregulier-Eingängen“ · Mikrocontroller und Digitale Elektronik ·
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MCP1403.pdf
information purposes only. Microchip Technology Drawing C04-113B © 2007 Microchip Technology Inc. DS22022B-page 13 MCP1403/4/5 8-Lead Plastic Dual In-Line (P) – 300 mil Body [PDIP] Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com
in „MOSFET mit Treiber Verständnisproblem“ · Analoge Elektronik und Schaltungstechnik ·
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pl2303.pdf
Release Date: July, 2002 ds_pl2303_v14 Revision History Revision Description Date 1.4 • Add Windows CE .NET support feature August 29, 2002 1.3 • Buffer for upstream and downstream data flow – August 01, 2002 change from 96 to
in „USB - seriell Adapter für 1,- EUR!“ · Mikrocontroller und Digitale Elektronik ·
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AL5802-DIO.pdf
CE(SAT) C B hFE DC Current Gain (Note 9) VCE = 5V, C = 150mA 100 — — — R1 Input Resistance — 7 10 13 kΩ *Characteristics of transistor only. Note: 9. Short duration pulse test used to minimize self-heating effect. AL5802 3 of 11 March 2014 Document number: DS35516 Rev. 9 - 2 www.diodes.com © Diodes
in „Dimensionierung von LED-Dimm-Schaltung“ · Analoge Elektronik und Schaltungstechnik ·
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Freq-Spannungswandler.pdf
Voltage Driven Meter Indicating Engine RPM M 2 VO= 6V @400 Hz or 6000 ERPM (8 Cylinder Engine) 1 7 DS007942-12 Current Driven Meter Indicating Engine RPM IO= 10 mA@ 300 Hz or 6000 ERPM (6 Cylinder Engine) DS007942-13 9 www.national.com 1 2 Typical Applications (Continued) M / 7 Capacitance Meter 9 V
in „LM2907/17 Frequenz-Spannungswandler“ · Analoge Elektronik und Schaltungstechnik ·
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Freq-Spannungswandler.pdf
Voltage Driven Meter Indicating Engine RPM M 2 VO= 6V @400 Hz or 6000 ERPM (8 Cylinder Engine) 1 7 DS007942-12 Current Driven Meter Indicating Engine RPM IO= 10 mA@ 300 Hz or 6000 ERPM (6 Cylinder Engine) DS007942-13 9 www.national.com 1 2 Typical Applications (Continued) M / 7 Capacitance Meter 9 V
in „Frequenz Spannungswandler“ · Analoge Elektronik und Schaltungstechnik ·
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NSC.pdf
Voltage Driven Meter Indicating Engine RPM M 2 VO= 6V @400 Hz or 6000 ERPM (8 Cylinder Engine) 1 7 DS007942-12 Current Driven Meter Indicating Engine RPM IO= 10 mA@ 300 Hz or 6000 ERPM (6 Cylinder Engine) DS007942-13 9 www.national.com 1 2 Typical Applications (Continued) M / 7 Capacitance Meter 9 V
in „Frequenz Spannungswandler Beschaltung“ · Mikrocontroller und Digitale Elektronik ·
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Datei
RTC_NVRAM_DUMP.c
for two BCD digits (*16) RTC_regs[fields] = bcd + temp2; // bcd = packed BCD value ready to send to DS1306 fields++; // Increment DS1306 register pointer } RTC_regs[reg_translate_LUT[SECONDS_REG]] &= 0x7f; RTC_regs[reg_translate_LUT[HOURS_REG]] &= 0x3f; // write 7 bytes of BCD data to ds1307 i2c_start
in „I2C mit DS3132 - Peter Fleury I2C implementierung“ · Mikrocontroller und Digitale Elektronik ·
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PIC16F18344.pdf
more informa- tion on accessing these memory locations. 2015 Microchip Technology Inc. Preliminary DS40001800A-page 63 PIC16(L)F18324/18344 4.7 Register Definitions: Device and Revision REGISTER 4-5: DEVID: DEVICE ID REGISTER R R R R R R DEV<13:8> bit 13 bit 8 R R R R R R R R DEV<7:0> bit 7 bit 0 Legend
in „EEPROM Verständnisproblem beim PIC 16F18344“ · Mikrocontroller und Digitale Elektronik ·
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Datei
owdevice_ATT13_DS2423.c
/* * owdevice.c * * Created: 24.01.2012 14:11:43 * Author: Tobias Mueller, mail(at)tobynet.de * Bitte bei weiterer Verabeitung immer angeben */ #include <avr/io.h> #include <avr/interrupt.h> #ifdef __AVR_ATmega32__ #include "uart.h" #include <util/delay.h> #endif //DEVICES #ifdef __AVR_ATtiny13A__ // OW_PORT Pin 6 - PB1 #define OW_PORT PORTB #define OW_PIN PINB #define OW_PORTN (1<<PINB1) #define OW_PINN (1<<PINB1) #define OW_DDR DDRB #define SET_LOW OW_DDR|=OW_PINN;OW_PORT&=~OW_PORTN; #define RESET_LOW {OW_DDR&=~OW_PINN;} #define EN_OWINT {GIMSK|=(1<<INT0);GIFR|=(1<<INTF0);} #define DIS_OWINT
in „1-Wire Slave auf AVR“ · Mikrocontroller und Digitale Elektronik ·
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24fc256.pdf
is not tested but ensured by characterization. 1998-2022MicrochipTechnologyInc.anditssubsidiaries DS20001203Y-page 5 24AA256/24LC256/24FC256 FIGURE 1-1: BUS TIMING DATA 5 4 2 D3 SCL 7 3 SDA 8 9 10 IN 6 16 13 14 SDA OUT (protected) WP 11 12 (unprotected) DS20001203Y-page 6 1998-2022MicrochipTechnologyInc.anditssubsidiaries
in „Wodtke HP-S5 HP Er3 EEPROM Schreib-/Lesefehler“ · Haus & Smart Home ·
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564746-da-01-en-MOSFET_N_KA_800V_STP4N80K5_TO_220AB_STM.pdf
current GS = 0) VDS = 800 V, TC=125 °C 50 µA Gate-body leakage IGSS current (V = 0) VGS = ± 20 V ±10 µA DS V Gate threshold voltage V = V , I = 100 µA 3 4 5 V GS(th) DS GS D Static drain-source on- RDS(on) VGS = 10 V, D = 1.5 A 2.1 2.5 Ω resistance Table 5. Dynamic Symbol Parameter Test conditions Min. Typ
in „Anodenspannungsstabilisierung für Röhrenverstärker mit IRF840 als Längsregler“ · Analoge Elektronik und Schaltungstechnik ·
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AO4410.pdf
Field Effect Transistor General Description Features The AO4410 uses advanced trench technology to V DS(V) = 30V provide excellent DS(ON) shoot-through immunity, ID= 18A (VGS = 10V) body diode characteristics and ultra-low gate R DS(ON) 5.5mΩ (V GS= 10V) resistance. This device is ideally suited for use
in „Falsches Ladegerät am Notebook :-(“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ON_OFF.bas
Display ' Hier jetzt noch der Geist Spidata = T_st(n_2) Call Sendspi2display(spidata) Next N_1 Dog_ds = 0 Dispadr = &B10000000 + 16 ' Wir schreiben erst mal in die Grossen Zeichen Call Sendspi2display(dispadr) ' Schreibposition waehlen Dog_ds = 1 ' Jetzt kommen wirkliche Zeichen! For N_1 = 1 To 16 N_
in „Noch ein Taschenrechner auf ATMega Basis“ · Projekte & Code ·
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P-FET.pdf
0.23 Ω V GS=-4.5V, D =-0.8A Forward Transconductance (3) g 1.1 S V =-10V,I =-0.8A fs DS D DYNAMIC (3) Input Capacitance C iss 330 pF V DS=-25 V, GS =0V, Output Capacitance C oss 120 pF f=1MHz Reverse Transfer Capacitance C 45 pF rss SWITCHING (2) (3) Turn-On Delay Time td(on) 2.8 ns Rise Time tr 6.4 ns V =-15V, I =-1.6A R =6.2Ω, R =25Ω Turn-Off Delay Time t 13.9 ns G D d(off) (Refer to test circuit) Fall Time t 10.3 ns f Total Gate Charge Q g 10.2 nC V DS=-24V,VGS=-10V, Gate-Source Charge Q gs 1.5 nC ID=-1.6A (Refer to test circuit) Gate Drain Charge Q gd
in „Review: Spannungsversorgung 3V->5V + Ein/Ausschalter“ · Mikrocontroller und Digitale Elektronik ·
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30262e.pdf
PWTREN WDTEN FOSC1 FOSC0 FOR PIC16CR83/84: CP CP CP CP CP CP DP CP CP CP PWTREN WDTEN FOSC1 FOSC0 bit13 bit0 bit 13-8, CP: Code Protection bits bit 6-4 1 = Code protection off 0 = Code protection on bit 7 For PIC16F83/84/84A: (1) CP: Code Protection bits 1 = Code protection off 0 = Code protection on For
in „PGD und PGC beim PIC16F84A“ · Mikrocontroller und Digitale Elektronik ·
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1.5KE6V8A.PDF
device. 2. For bi-directional devices Raving Vvolts and underR the I limit is doubled. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see Notes 5 and 7. DS21503 Rev. 10 - 2 1 of 4 1.5KE6V8(C)A - 1.5KE400(C)A www.diodes.com ã Diodes Incorporated Max. Max. Max. Type Type Reverse
in „Welches Bauteil (Diode?) ist das?“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
DS10-g0075-PID.c
********** // * Datenspeicher 10 * // ******************* // Flüssigkristallanzeige LMK62R125A1 // DS18B20 NR. 13,14,15,16 an 63-10 Adresse 0x18 /************************************************************************/ /* Messstelle 3 = Spannungseingang P6.3 */ /* Messstelle 2 = Spannungseingang P6.2
in „Wie 2x interrupt verschachteln, MSP430“ · Mikrocontroller und Digitale Elektronik ·
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lg_flatron_l1800p_lb886f_ch_cl-29.pdf
220PF160850V5%R/TPNP0 D732 0DS226009AA KDS226 TPKECSOT-2380V30 C707 0CH8106J691 10UF35VM105STD(CYL)R/TP D733 0DS226009AA KDS226 TPKECSOT-2380V30 C710 0CK103CK51A 0.01UF160850V10%R/TPB(Y D734 0DS226009AA KDS226 TPKECSOT-2380V30 C714
in „Überspannung in Mehrparteien-Wohunung. Baustrom, oder Kabel angebohrt?“ · Haus & Smart Home ·
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Projekt_Hausautomation-Temperatursensoren.pdf
1 2 3 4 5 6 +3.3V A A Temperaturerfassung 1 J7 2 Power 3.3V 3 D 2 V U4 DQ D N DS18B20 G 1 1 1 2 2 3 3 4 4 5 5 3 J12 J116 7 7 D 2 V U5 8 8 DQ D DS18B20 9 9 G 10 10 1 B 11 11 B 12 12 3 Temperatursensoren DS18b20 D 2 V U6 U3 DQ D DS18B20 GND G NodeMCU1.0(ESP-12E) R6 1 3,3k 1 A0(ADC0
in „ESP8266 mehrere Temperaturfühler mit Display“ · Mikrocontroller und Digitale Elektronik ·
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12887.pdf
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Input Capacitance C IN 5 pF Output Capacitance C OUT 7 pF 13 of 19 DS12887 AC ELECTRICAL CHARACTERISTICS (0°C to 70°C; V = 4.5V to 5.5V) CC PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Cycle Time CYC 385 DC ns PW EL 150 ns Pulse Width, DS/E Low or RD/ WR High Pulse
in „Anschluss von AT89C55WD“ · Mikrocontroller und Digitale Elektronik ·
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on-semiconductor-rfp70n06-mosfet.pdf
- ±100 nA GSS GS Drain to Source On Resistance (Note 2) r I = 70A, V = 10V (Figure 9) - - 0.014 Ω DS(ON) D GS Turn-On Time (ON) VDD = 30V, D ≈ 70A, RL= 0.43Ω, - - 190 ns V = 10V, R = 2.5Ω Turn-On Delay Time td(ON) GS GS - 10 - ns (Figure 13) Rise Time tr - 137 - ns Turn-Off Delay Time d(OFF) - 32 -
in „DC Wandler wiederbeleben“ · Analoge Elektronik und Schaltungstechnik ·
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Display_-_NL10276BC30-04D.pdf
thvh Hsync VIH*/VI* ∗ V IH, V : Refer to the LVDS transmitter specifications Data Sheet EN0488EJ1V0DS00 13 NL10276BC30-04D (3) Input Signal Timing Chart tc tch V I* CLK VCCI× 50% V I* tcrf tds tdh INVALID Invalid DATA (R0~R5) V I* (G0~G5) V I* 0 799 (B0~B5) tdrf tdrf teh tes teh tes DE V I* VCCI× 50%
in „VIA Nano Board LVDS Connector“ · Mikrocontroller und Digitale Elektronik ·
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Display_-_NL10276BC30-04D.pdf
thvh Hsync VIH*/VI* ∗ V IH, V : Refer to the LVDS transmitter specifications Data Sheet EN0488EJ1V0DS00 13 NL10276BC30-04D (3) Input Signal Timing Chart tc tch V I* CLK VCCI× 50% V I* tcrf tds tdh INVALID Invalid DATA (R0~R5) V I* (G0~G5) V I* 0 799 (B0~B5) tdrf tdrf teh tes teh tes DE V I* VCCI× 50%
in „günstiges ITX Mainboard mit LVDS Connector“ · Mikrocontroller und Digitale Elektronik ·
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1-SPP30N03L.pdf
BR)DSS 30 - - V V = 0 V, I = 0.25 mA, T = 25 °C GS D j Gate threshold voltage, V = V V 1.2 1.6 2 GS DS GS(th) ID= 50 µA Zero gate voltage drain current IDSS µA V = 30 V, V = 0 V, T = 25 °C DS GS j V DS = 30 V, GS = 0 V, j = 150 °C - - 100 Gate-source leakage current IGSS - 10 100 nA V = 20 V, V = 0 V
in „logic level MOSFET - falsche Gate threshold voltage?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Carlo_Gavazzi__EM540DINAV23XS1X.pdf
Weight 370 g (packaging included) Dimensions 3-DIN modules 43,80 4,40 0 9 62,41 53,40 07/07/2021 EM540 DS ENG Carlo Gavazzi Controls 4.p.A. EM540 Environmental specifications Operating temperature From -25 to +55 °C/from -13 to +131 °F Storage temperature From -25 to +70 °C/from -13 to 158 °F Electromechanical
in „Wirkleistungsmessung 3-phasig, ca. 200 W“ · Haus & Smart Home ·
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40146F.pdf
0 0 1 A B If SEED = 1, transmit seed immediately. 10 1 0 1 0 A B 11 1 0 1 1 A B 12 1 1 0 0 A (1) B 13 1 1 0 1 A (1) B 14 1 1 1 0 A B (1) 15 1 1 1 1 A B (1) Note 1: IR mode © 2011 Microchip Technology Inc. DS40146F-page 11 HCS361 4.0 TRANSMITTED WORD 4.2 Code Word Organization 4.1 Transmission Format
in „Fehlersuche Funksender Zentralverriegelung Toyota Yaris“ · Fahrzeugelektronik ·
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Datei
ds1620.c
#include "ds1620.h" #include <util/delay.h> unsigned char ds1620_init (void) { /*set all pins as output*/ DDR_DS1620 = (1<<DQ_DS1620) | (1<<CLK_DS1620) | (1<<RES_DS1620); /*set CPU use bit, continuously temperature
in „DS1620 - Initialisierung zumTH und TL schreiben?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MOSFET-irfiz34v.pdf
12V .2 F Q G .3 F + 10 V VDS D.U.T. - Q GS QGD VGS V G 3mA G D Charge Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFIZ34V Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations D.U.T * • Low Stray Inductance • Ground Plane
in „Frage zur Optokoppler“ · Mikrocontroller und Digitale Elektronik ·
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V2Pro_Board_User_Guide_2_2.pdf
from removable CompactFlash cards. Memec Design offers an optional System ACE programming module (DS- KIT-SYSTEMACE) that connects to this interface. Figure 1 shows the Virtex-II Pro development board. November 13, 2002 1 Parallel IV System ACE Cable Port Interface JTAG Port ISP PROMs 5V Input P160
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ZXMHC6A07T8.pdf
Breakdown Voltage V (BR)DSS 60 V D =250µA, VGS=0V Zero Gate Voltage Drain Current I 1 µA V =60V, V =0V DSS DS GS Gate-Body Leakage IGSS 100 nA VGS =±20V, VDS=0V Gate-Source Threshold Voltage V GS(th) 1 3.0 V D =250µA, VDS= VGS (1) Static Drain-Source On-State ResistanceR DS(on) 0.300 Ω VGS=10V, ID=1.8A 0.450
in „DCC Decoder“ · Projekte & Code ·
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PDF
A100_ZXMHC6A07T8.pdf
Breakdown Voltage V (BR)DSS 60 V D =250µA, VGS=0V Zero Gate Voltage Drain Current I 1 µA V =60V, V =0V DSS DS GS Gate-Body Leakage IGSS 100 nA VGS =±20V, VDS=0V Gate-Source Threshold Voltage V GS(th) 1 3.0 V D =250µA, VDS= VGS (1) Static Drain-Source On-State ResistanceR DS(on) 0.300 Ω VGS=10V, ID=1.8A 0.450
in „H-Brücke ohne Mosfet-Treiber“ · Analoge Elektronik und Schaltungstechnik ·
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sihld24_Mosfet.pdf
PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 60 Available R () V = 5.0 V 0.10 For Automatic Insertion DS(on) GS RoHS* Qg(Max.) (nC) 18 End Stackable COMPLIANT Logic-Level Gate Drive Qgs (nC) 4.5 Qgd (nC) 12 R DS(on)Specified at VGS = 4 V and 5 V Configuration Single 175 °C Operating Temperature D Fast Switching
in „Mosfet sperrt nicht“ · Analoge Elektronik und Schaltungstechnik ·
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irf840_und_irf840fi.pdf
Voltage V = V I = 250 A 2 3 4 V GS(th) DS GS D R DS(on) Static Drain-source On V GS = 10V D = 4.4 A 0.74 0.85 Resistance ID(on) On State Drain Current V DS> ID(on) R DS(on)maxVGS = 10 V 8 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(∗) Forward V DS> ID(on) R DS(on)max ID= 4.4 A 4.9 6 S Transconductance Ciss Input Capacitance V DS= 25 V f = 1 MHz V GS= 0 1100 1500 pF Coss Output Capacitance 190 240 pF Crss Reverse Transfer 80 110 pF Capacitance
in „Unterschied zw. IRF840 und IRF840FI“ · Mikrocontroller und Digitale Elektronik ·
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ssr2n60a.pdf
MOSFET SSR/U2N60A FEATURES BV DSS = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology R DS(on) = 5 Ω Lower Input Capacitance I = 1.8 A Improved Gate Charge D Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current : 25 μA (Max.) @ V DS = 600V Lower R : 3.892 Ω (Typ.) 2 DS(ON) 1 12 3
in „Ersatz für SSR2N60A“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
DS10-g0074-PID.c
********** // * Datenspeicher 10 * // ******************* // Flüssigkristallanzeige LMK62R125A1 // DS18B20 NR. 13,14,15,16 an 63-10 Adresse 0x18 /************************************************************************/ /* Messstelle 3 = Spannungseingang P6.3 */ /* Messstelle 2 = Spannungseingang P6.2
in „Wie 2x interrupt verschachteln, MSP430“ · Mikrocontroller und Digitale Elektronik ·
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IXFB100N50P_NMOS_TO-264_500_V_100_A.pdf
) tf 26 ns Q g(on) 240 nC Q gs VGS = 10V, V DS= 0.5 • VDSS, D = 0.5 • DSS 96 nC Q gd 78 nC R thJC 0.066C/W R thCS 0.13 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J IS
in „el Last - Bauteilauswahl“ · Analoge Elektronik und Schaltungstechnik ·
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NDS355AN.pdf
- On Delay Time V = 10 V, I = 1 A, 10 20 ns d(on) DD D t Turn - On Rise Time VGS = 10 V, RGEN = 6Ω 13 25 ns r t Turn - Off Delay Time 13 25 ns d(off) t Turn - Off Fall Time 4 10 ns f td(on) Turn - On Delay Time VDD = 5 V, D = 1 A, 10 20 ns tr Turn - On Rise Time VGS = 4.5 V, RGEN= 6 Ω 32 60 ns td(off
in „nds355/nds356“ · Markt ·
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PIC18Fxx2.pdf
PSPIF, PSPIE and PSPIP bits are reserved on the PIC18F2X2 devices; always maintain these bits clear. DS39564B-page 112 2002 Microchip Technology Inc. PIC18FXX2 Figure 13-1 is a simplified block diagram of the Timer3 13.0 TIMER3 MODULE module. The Timer3 module timer/counter has the following Register
in „AD1 und AD2 Multiplexen (PIC18F452)“ · Mikrocontroller und Digitale Elektronik ·
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3003E.pdf
3 W R9 D Transistor D1 D 1N5402 82 ＋OUT 1 CN3 5 IN ＋ +IS K2B CON1 R62 3 V 1 + 4 5 CN2 0.05 0 CON1 C13 1 35.1 V 4 C2 7 C4 R1 4 104 2 20.2 V 3 4 SGND 3 7 .4V 2 C1 2K/2 W 4 0V 1 104 D4 104 D2 C32 C14 OUT PUT 4 K1B C5 1N5402 104 CN1 CN1 3 1N5402 D3 104 1 CN3 - CON4 5 1 N5402 IN － 220u/50V CON4 CON1 -VS 1
in „Suche Schaltplan Netzgerät QJ3003E“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
QJ3003E_S_netzteil.pdf
3 W R9 D Transistor D1 D 1N5402 82 ＋OUT 1 CN3 5 IN ＋ +IS K2B CON1 R62 3 V 1 + 4 5 CN2 0.05 0 CON1 C13 1 35.1 V 4 C2 7 C4 R1 4 104 2 20.2 V 3 4 SGND 3 7 .4V 2 C1 2K/2 W 4 0V 1 104 D4 104 D2 C32 C14 OUT PUT 4 K1B C5 1N5402 104 CN1 CN1 3 1N5402 D3 104 1 CN3 - CON4 5 1 N5402 IN － 220u/50V CON4 CON1 -VS 1
in „QJE 3005E III Schaltbild“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLZ44NPBF-HXY.pdf
20 mΩ Forward Transconductance gFS V DS0V,I =D0A 15 - - S Input Capacitance C - 4050 - PF lss V =25V,V =0 V, Output Capacitance C DS GS - 430 - PF oss F=1.0MHz Reverse Transfer Capacitance Crss - 110 - PF Turn-on Delay Time d(on) - 60 - nS
in „LED-Streifen fiepen bei PWM <=100%“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
STP15N80K5.pdf
0.01 0.1 1 10 100 V DS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 ID AM15434v1 (A) 1µs i 10µs 10 raon iaDS 100µs it aR ti ym 1ms eredb Opii 10ms 1 L Tj=150°C Tc=25°C Single pulse 0.1
in „1500V 8A mit MOSFET schalten“ · Analoge Elektronik und Schaltungstechnik ·
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LD7536R.pdf
and restart AC power-on recycling. 12 Leadtrend Technology Corporation www.leadtrend.com.tw LD7536R-DS-01a December 2011 LD7536R Reference Application Circuit --- 40W (19V/2.1A) Adapter . N L 5 / 5 V 3 2 O C T O P L M G D P 5 1 N 5 V D 6 C R O C S T N C 4 6 D 6 M 8 I 4 2 S D Z N E 1 R + N o 13 Leadtrend
in „DENON DN-508MX Netzteil defekt“ · Analoge Elektronik und Schaltungstechnik ·
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PIC_Memory_Programming_Specification.pdf
(igure 3-9) Program/Verify mode PC = 0x3FF/7FF (Config Word) Exit Programming Mode Done DS41227D-page 12 Preliminary 2004 Microchip Technology Inc. PIC12F508/509 FIGURE 3-13: PROGRAM FLOW CHART – ERASE PROGRAM MEMORY, CONFIGURATION WORD AND USER ID Start Read and save OSCCAL bits (Figure
in „Programm aus PIC12F508 laden und verstehen“ · Mikrocontroller und Digitale Elektronik ·