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PDF
DS_K4B8G1646Q-MY_Rev10.pdf
0.38 - 0.38 - 0.38 - 0.38 - tCK(avg) 13, g DQ low-impedance time from CK, CK tLZ(DQ) -800 400 -600 300 -500 250 -450 225 ps 13,14, f DQ high-impedance time from CK, CK tHZ(DQ) - 400 - 300 - 250 - 225 ps 13,14, f 1.35V tDS(base) AC160 90 - 40 - - - - - ps d,17,33 tDS(base) 140 - 90 - 45 - 25 - ps Data
in „Orange Pi - 15$ Quadcore SBC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
GL10N10B4S.pdf
Description： VDSS 100 V The GL10N10B4S uses advanced trench technology and ID 10 A design to provide excellDS(ON)ith low gate charge. It PD 40 W R 110 mΩ can be used in a wide variety of applications. The packageDS(ON)type form is TO-252, which accords with the RoHS standard. TO-252 Features： RDS(ON)140mΩ
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PDF
2108182030_GL-GL10N10B4S_C2886410.pdf
Description： VDSS 100 V The GL10N10B4S uses advanced trench technology and ID 10 A design to provide excellDS(ON)ith low gate charge. It PD 40 W R 110 mΩ can be used in a wide variety of applications. The packageDS(ON)type form is TO-252, which accords with the RoHS standard. TO-252 Features： RDS(ON)140mΩ
in „Betrieb von MOSFETS bei maximalstrom?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
OZ9902.pdf
365 KHz Logic high 2 --- -- SYNC logic SYNC V Logic low -- -- 1 LED Current Regulation ADIM ≥ 1.5V 300 mV ISEN1/2 reference Voltage V ISEN1/2 ADIM ≤ 0.5V 100 mV CONFIDENTIAL OZ9902-DS-0.55 Page 4 Preliminary OZ9902 5 ELECTRICAL CHARACTERISTICS (Continued) All specifications are: T = 25°C, VCC=RTV, R
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PDF
SBR05M60BLP.pdf
Incorporated. SBR05M60BLP 2 of 5 March 2016 Document number: DS31771 Rev. 3 - 2 www.diodes.com © Diodes Incorporated SBR05M60BLP A A10,000 0.8 ( ( A T T TA= 150°C ( 0.7 E N N R R TA= 125°C E U R 1,000 R 0.6 C U U E C C S S D 0.5 E R TA= 85°C R V V W R E 100 R 0.4
in „kleine SMD Graetz-Brücke gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FDB8832_Logic__N__Temp_ok_.pdf
Source Breakdown Voltage ID= 250µA, VGS = 0V 30 - - V - - 1 DSS Zero Gate Voltage Drain Current V DS= 24V µA V GS= 0V TJ= 150°C - - 250 I Gate to Source Leakage Current V = ±20V - - ±100 nA GSS GS On Characteristics VGS(th) Gate to Source Threshold Voltage V DS= VGS, D = 250µA 1.0 1.6 3.0 V I = 80A,
in „Mini-heizung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
catalog.pdf
Gauge, 18.8 mV/kPa, 0 kPa, 250 Page 57/87 Bauteileliste vom 12.08.2022 kPa, 4.85 V, 5.35 V RAM MPN: DS1245Y-70+ [ID]: 000304 [Price]: 32.23 USD [QTY]: 2 [Category]: RAM [Desc]: DS1245 Series 1024 kb (128 k x 8) 70ns Commercial Temp Non-Volatile SRAM DIP-32 MPN: DS1230Y-70+ [ID]: 000305 [Price]: 22.7 USD
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PDF
catalog.pdf
[Desc]: Real Time Clock Parallel 16byte Clock/Calendar/Alarm/Timer/Interrupt 28-Pin PDIP Tube MPN: DS1307ZN+ [ID]: 000432 [Price]: 3.26 USD [QTY]: 5 [Category]: Real Time Clocks [Desc]: DS1307 Series 5.5 V I2C/Serial Surface Mount Real Time Clock - SOIC-8 MPN: DS1307Z+ [ID]: 000568 [Price]: 2.92 USD
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PDF
catalog-3.pdf
[Desc]: Real Time Clock Parallel 16byte Clock/Calendar/Alarm/Timer/Interrupt 28-Pin PDIP Tube MPN: DS1307ZN+ [ID]: 000432 [Price]: 4.4923 USD [QTY]: 5 [Category]: Real Time Clocks [Desc]: DS1307 Series 5.5 V I2C/Serial Surface Mount Real Time Clock - SOIC-8 MPN: DS1307Z+ [ID]: 000568 [Price]: 4.0238
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PDF
pic16f88.pdf
kOhm 1.5 ) H 5.1 kOhm ( q r F 1.0 10 kOhm 0.5 100 kOhm 0.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 V DD (V) DS30487C-page 198 2005 Microchip Technology Inc. PIC16F87/88 FIGURE 19-13: AVERAGE F OSC vs. V DD FOR VARIOUS VALUES OF R (RC MODE, C = 300 pF, +25°C) 0.9 0.8 3.3 kOhm 0.7 0.6 5.1 kOhm ) H 0.5 ( q r 0.4
in „auftrennen einer 2stelligen Dezimalzahl in asm (pic 16f88)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
RGB_Bildsensor_-_D100997D.pdf
D D Transfer gate CCD analog shift register 3 2 4 8 9 φ φ φ2 φ1 φCLB RB 1L 2 Data Sheet S15330EJ4V0DS µPD8872 PIN CONFIGURATION (TopView) CCD linear image sensor 22-pin plastic DIP (10.16 mm (400)) • µPD8872CY-A Ground GND 1 22 VOUT3 Output signal 3 (Red) Reset gate clock φRB 2 21 VOUT2 Output signal
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4412f.pdf
of MOSFETs are Manytypesofcapacitors,rangingfrom0.1 Fto10 Fand the maximum drain-source voltage V DS(MAX),threshold located close to the LTC4412, will provide adequate V voltage VGS(VT)and on-resistance R DS(ON). IN bypassingif needed. Voltagedroopcanoccurat theload The maximumallowable drain-source
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PDF
STD60N55F3.pdf
= 10V, I = 32A DS(on) resistance GS D 6.5 8.5 mΩ Table 4. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit (1) Forward transconductance V =25V, I =32A 50 S gfs DS D Ciss Input capacitance 2200 pF C Output capacitance
in „Frage zu MOSFET STF60N55F3“ · Mikrocontroller und Digitale Elektronik ·
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PDF
QF5252F.pdf
Current BAT0 17 uA T ON Time TON Time TON 5 us Efficiency Efficiency η L1 =180uH，C =12uF 84 % QX5252_DS03EN QX Micro Devices Co., Ltd. 4 of 9 www.qxmd.com.cn QX5252 Solar LED Driver Typical Electrical Curves o VBAT=1.2V, A =25 C, unless otherwise specified QX Micro Devices Co., Ltd. QX5252_DS03EN 5 of
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PDF
QX5252F_EN.pdf
Current BAT0 17 uA T ON Time TON Time TON 5 us Efficiency Efficiency η L1 =180uH，C =12uF 84 % QX5252_DS03EN QX Micro Devices Co., Ltd. 4 of 9 www.qxmd.com.cn QX5252 Solar LED Driver Typical Electrical Curves o VBAT=1.2V, A =25 C, unless otherwise specified QX Micro Devices Co., Ltd. QX5252_DS03EN 5 of
in „Elektronik einer Solargartenleuchte defekt“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
test2.xml
/unknown_sec> </ds> <ds> <name> T_ist_HK </name> <type> GAUGE </type> <minimal_heartbeat>120</minimal_heartbeat> <min>NaN</min> <max>NaN</max> <!-- PDP Status --> <last_ds>20.8</last_ds> <value>NaN</value> <unknown_sec
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PDF
IRFI4212H-117.pdf
Drain-to-Source On-Resistance ––– 58 72.5 mΩ V GS= 10V, D = 6.6Ae VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V V DS= VGS ID= 250µA ∆V /∆T Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C GS(th) J DSS Drain-to-Source Leakage Current ––– ––– 20 µA V DS= 100V, VGS = 0V ––– ––– 250 V DS= 100V, VGS = 0V, J = 125°C
in „UV-Laserdrucker II“ · Platinen ·
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Datei
freq.txt
---- dir_daten SEGMENT DATA ; deklariere Datensegment RSEG dir_daten ; waehle Datensegment ; SUBL: DS 1 ; Sub Low ist die Variable, die das zwischenergebniss der Lowbyt subtraktion zwischenspeichert ; ; FHI : DS 1 ; Variable für den Wert von Timer1 High FLO : DS 1 ; Variable für den Wert von Timer1 Low ; ; IMPL: DS 1 ; Variable für den Wert von Timer0 Low IMPH: DS 1 ; Variable für den Wert von Timer0 High ; ;------------------------------------------------------------------------------ ; Wertzuordnung ;--------
in „Frequenzüberprüfung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
P2804BDG.pdf
Voltage V (BR)DSS V = 0V, I = 250µA 40 GS D V Gate Threshold Voltage VGS(th) V = V , I = 250µA 1 1.5 2.5 DS GS D Gate-Body Leakage IGSS VDS = 0V, GS= ±20V ±250 nA V DS= 32V, VGS= 0V 1 Zero Gate Voltage Drain Current IDSS µA VDS= 30V, VGS= 0V, TC= 125 °C 10 On-State Drain Current ID(ON) VDS = 10V, GS = 10V
in „Suche Ersatz für SMD Sicherung K“ · Analoge Elektronik und Schaltungstechnik ·
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pressure_master.pdf
FIR filter 61 59 57 55 53 0 100 200 300 400 500 600 700 800 900 1000 Rolling Average Filtering Alt Feet vs Time of Freescale MPXAZ6115A pressure sensor 60 55 50 0 100 200 300 400 500 600 700 800 900 1000 27 Altitude output using Intersema
in „Projektunterstützung“ · Digitale Signalverarbeitung / DSP / Machine Learning ·
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PDF
DS1643-DS1643P.pdf
Power-Fail Output GND 17 18 A0 Pin-for-Pin Compatible with Other Densities of PowerCap Module Board DS164XP Timekeeping RAM (Uses DS9034PCX PowerCap) ORDERING INFORMATION VOLTAGE RANGE PART TEMP RANGE PIN-PACKAGE TOP MARK (V) DS1643-85+ 5.0 0°C to +70°C 28 EDIP (0.740) DS1643+85 DS1643-100+ 5.0 0°C to +70°C 28 EDIP (0.740) DS1643+100 DS1643P-85+ 5.0 0°C to +70°C 34-PowerCap* DS1643P+85 DS1643P-100+ 5.0 0°C to +70°C 34-PowerCap* DS1643P+100 *DS9034I-PCX+ and DS9034-PCX+ required (must be ordered separately). +Denotes a lead
in „parallele SRAM Bausteine (nennt man das so ?) in Bascom“ · Mikrocontroller und Digitale Elektronik ·
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PDF
csd18502kcs.pdf
BVDSS Drain to Source Voltage VGS = 0V,DI = 250μA 40 V DSS Drain to Source Leakage Current VGS = 0V, DS = 32V 1 μA I Gate to Source Leakage Current V = 0V, V = 20V 100 nA GSS DS GS VGS(th) Gate to Source Threshold Voltage VDS= V GS,DI = 250μA 1.5 1.8 2.1 V VGS = 4.5V,DI = 100A 3.3 4.3 mΩ RDS(on) Drain
in „Netzteil: 2 Mosfets parallel OK?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FSD156MRBN.PDF
Combination Ordering Information Output Power Table (2) Operating (3) Part Number Package Junction Current R DS(ON) 230V AC ±15% 85-265V AC Replaces Limit (Max.) Device Temperature Adapter (4)Open (5)dapter (4)Open (5) Frame Frame FSFM300N FSD156MRBN 8-DIP -40°C ~ 1.60A 2.3 26W 40W 20W 30W +125°C FSGM300 Notes
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PDF
Transistoren_cht.pdf
99 - 5 - A:Nearest, B:Different Package Power MOSFETs Cross Reference Alphanumerically Part V DSS R DS(ON) D P D Package Toshiba Note Vender Number (V) (ohm) (A) (W) Replacement BSP300 800 20 0.19 SOT-223 Siemens BSP315 -50 0.80 1 1.5 SOT223 Siemens BSP316 -100 2.20 0.6 1.5 SOT223 2SJ508 B Siemens BSP317
in „Frage Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Power_MOSET_Cross_reference.pdf
99 - 5 - A:Nearest, B:Different Package Power MOSFETs Cross Reference Alphanumerically Part V DSS R DS(ON) D P D Package Toshiba Note Vender Number (V) (ohm) (A) (W) Replacement BSP300 800 20 0.19 SOT-223 Siemens BSP315 -50 0.80 1 1.5 SOT223 Siemens BSP316 -100 2.20 0.6 1.5 SOT223 2SJ508 B Siemens BSP317
in „Schaltregler Fragen“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
GUI-Template.bas
id1&, id2&, id3&, id4&, id5&, id6&, id7&, id8&, id9&, id10& ' hier mit "&" Style& = %WS_POPUP OR %DS_MODALFRAME OR %WS_CAPTION OR %WS_MINIMIZEBOX OR %WS_SYSMENU OR %DS_CENTER ExStyle& = 0 id1 = 101 ' IDs der Controls id2 = 102 id3 = 103 id4 = 104 id5 = 105 id6 = 106 id7 = 107 id8 = 108 id9 = 109 id10 = 110 LOCAL lResult& DIALOG NEW hParent&, "Dialog Title", 0, 0, 400, 300, Style&, ExStyle& TO hDlg& ' CONTROL ADD BUTTON, hDlg&, id1, "Abbrechen", 50, 250, 40, 20 ' "Abbrechen ok ' CONTROL ADD BUTTON, hDlg&, id2, "OK", 300, 250, 40, 20 ' OK ok ' CONTROL ADD LABEL, hDlg&,
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Datei
GUI-Template.bas
id1&, id2&, id3&, id4&, id5&, id6&, id7&, id8&, id9&, id10& ' hier mit "&" Style& = %WS_POPUP OR %DS_MODALFRAME OR %WS_CAPTION OR %WS_MINIMIZEBOX OR %WS_SYSMENU OR %DS_CENTER ExStyle& = 0 id1 = 101 ' IDs der Controls id2 = 102 id3 = 103 id4 = 104 id5 = 105 id6 = 106 id7 = 107 id8 = 108 id9 = 109 id10 = 110 LOCAL lResult& DIALOG NEW hParent&, "Dialog Title", 0, 0, 400, 300, Style&, ExStyle& TO hDlg& ' CONTROL ADD BUTTON, hDlg&, id1, "Abbrechen", 50, 250, 40, 20 ' "Abbrechen ok ' CONTROL ADD BUTTON, hDlg&, id2, "OK", 300, 250, 40, 20 ' OK ok ' CONTROL ADD LABEL, hDlg&,
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PDF
klassed_facharbeit.pdf
: UDS100V und I =DSA (bei 25°C; 20A bei 100°C) maximal. Benötigt wird U DS =70V, der Mosfet ist also um 23% überdimensioniert. Als Strom werden für 400 W bei 4 Ω 10A RMS verlangt (d.h. 14.1 A Spitzenstrom bei Sinus). Der Strom teilt sich auf 2 Mosfet's auf, es bleiben ca. 7
in „Suche Schaltplan für PWM Endstufe“ · Mikrocontroller und Digitale Elektronik ·
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PDF
93LC56B.pdf
BUSY READY HIGH-Z TWL Guaranteed at Vcc = 4.5V to +6.0V. 1997 Microchip Technology Inc. Preliminary DS21208A-page 7 93LC56A/B NOTES: DS21208A-page 8 Preliminary 1997 Microchip Technology Inc. 93LC56A/B NOTES: 1997 Microchip Technology Inc. Preliminary DS21208A-page 9 93LC56A/B NOTES: DS21208A-page 10
in „Primo EEPROM umprogrammieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
EE93LC46A.pdf
DO HIGH-Z BUSY READY HIGH-Z TWL Guaranteed at Vcc = 4.5V to +6.0V. 2000 Microchip Technology Inc. DS21173E-page 7 93LC46A/B NOTES: DS21173E-page 8 2000 Microchip Technology Inc. 93LC46A/B NOTES: 2000 Microchip Technology Inc. DS21173E-page 9 93LC46A/B NOTES: DS21173E-page 10 2000 Microchip Technology
in „Programieren eines 93LC46A (EEPROM) mit einem Attiny 13A“ · Mikrocontroller und Digitale Elektronik ·
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Datei
DS_1820_in_C.c
Start mit Master-Reset-Impuls u. Abfrage: Slave presence Bus_Reset(); // Skip ROM-Befehl, da nur ein DS1820 angeschlossen ist //Byte_Schreiben(0xCC); //Byte_Schreiben(0x44); // Befehl: Start Conversion an DS1820 _delay_ms(900); // >800 ms warten // 2.Befehlszyklus: Messwerte (Scratch Pad) auslesen // Start
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PDF
2N7000.pdf
Drain-source V(BR)DSS breakdown voltage ID= 250 µA, GS =0 60 V V = max rating DSS Zero gate voltage V DS= max rating, 1 µA drain currenGS(V 0) TC = 125 °C 10 )µA Gate-body leakage (s GSS current DS= 0) VGS = ± 18 V c±100 nA V Gate threshold voltageV = V , I = 250 µA 1 2.1 3 V GS(th) DS GS D o d RDS(on)
in „Schaltung mit 2 N-Kanal Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PIC16F1939.pdf
Actual % value Rate Error Rate Error Rate Error Rate Error (decimal) (decimal) (decimal) (decimal) 300 300.0 0.00 6666 300.0 -0.01 4166 300.0 0.00 3839 300.0 0.00 2303 1200 1200 -0.02 3332 1200 -0.03 1041 1200 0.00 959 1200 0.00 575 2400 2401 -0.04 832 2399 -0.03 520 2400 0.00 479 2400 0.00 287 9600
in „MPLAB delay und xtalfreq richtig benutzen“ · Mikrocontroller und Digitale Elektronik ·
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Datei
PICkit_3_Programmer_Application_ReadMe.txt
dsPIC33FJ32GP202 dsPIC33FJ32GP204 dsPIC33FJ32GP302 dsPIC33FJ32GP304 dsPIC33FJ64GP202 dsPIC33FJ64GP204 dsPIC33FJ64GP206 dsPIC33FJ64GP306 dsPIC33FJ64GP310 dsPIC33FJ64GP706 dsPIC33FJ64GP708 dsPIC33FJ64GP710
in „PICkit3 und Windows 11“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP41HVX1.pdf
to Mechanical Potentiometers DS00219 — Digital Potentiometer Design Guide DS22017 — Signal Chain Design Guide DS21825 — Analog Solutions for Automotive Applications Design Guide DS01005 2013 Microchip Technology Inc. DS20005207A-page
in „MCP41HVX READCMD falsch verstanden??“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TC2014.pdf
and 150 mA, respectively. 3.3V, 5.0V For higher-outputcurrent versions, see the TC1107 Applications (DS21356), TC1108 (DS21357) and TC1173 (DS21362) (IOUT = 300 mA) data sheets. • Battery-Operated Systems • Portable Computers Typical Application • Medical Instruments • Instrumentation 1 VIN VIN V OUT 5
in „Mcp3551 PT1000 Schaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
564932.pdf
–30 — — V ID= –10 mA, V GS = 0 voltage Gate to source breakdown V(BR)GSS ±20 — — V IG = ±100 A, V DS0 voltage Gate to source leak current I — — ±10 A V = ±16 V, V = 0 GSS GS DS Zero gate voltage drain current I — — –100 A V = –25 V, V = 0 DSS DS GS Gate to source cutoff voltage VGS(off) –1.0 — –2.5
in „Suche Mosfet oder Vergleichstyp“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
OB2223CPA.pdf
n - 6.096 7.1120 0.240 0.280 O e1 7.320 2.540 (BSC) 8.255 0.288 0.1 (BSC) 0.325 E2 7.620 10.920 0.300 0.430 ©On-Bright Electronics Confidential OB_DOC_DS_2223A0 - 10 - High Precision Low Cost MCM Power Switch RIGHT TO MAKE CHANGES IMPORTANT NOTICE or service without notice. Customers should obtain the
in „SMD IC "G1768A" Datenblatt gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
JMTK4004A.pdf
Application 40V,120A Load Switch RDS(ON)4.3mΩ @ V GS= 10V PWM Application R <7.5mΩ @ V = 4.5V DS(ON) GS Power management Lead free and Green Device Available Excellent DS(ON)nd Low Gate Charge 100% UIS TESTED! Lead free product is acquired 100% ΔVds TESTED! TO-252(DPAK) top view Marking
in „Bauteil Identifikation SMD erwünscht => MosFet?“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
index.html
SCD41 T: <span id="scd_t">--</span> <span class="temp3">°C</span></div> <div class="reading temp2">DS18B20: <span id="ds18">--</span> <span class="temp2">°C</span></div> <div class="reading temp4">BME_T: <span id="bme_t">--</span> </div> <canvas id="sensorChart" width="1200" height="640"></canvas
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PDF
IRL3713.pdf
Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL3713/S/L 14 I = 100000 V = 0V, f = 1 MHZ D 30A V DS = 24V GS V DS = 15V C iss = gs+ Cgd C ds SHORTED V 12 V DS = 6V C rss = gd ( C = C + C g oss ds gd l 10 F o (10000 V c Ciss c 8 n Coss u i o a - a - 6 C t C 1000 Crss a G 4 S G V 2 100 0 1 10 100 0 40
in „Logic Level Mosfet - Welcher "kann mehr"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MOSFET_TK6A60W_Toshiba_LIN.pdf
otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Input capacitance Ciss V DS= 300 V, GS = 0 V, f = 1 MHz 390 pF Reverse transfer capacitance C rss 1.7 Output capacitance C oss 12 Effective output capacitance C V = 0 to 400 V, V = 0 V 20 o(er) DS GS Gate resistance
in „Push/Pull in spannungsgeregelter Stromquelle / Frage zur Auslegung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MOSFET_TK6A60W_Toshiba_LIN.pdf
otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Input capacitance Ciss V DS= 300 V, GS = 0 V, f = 1 MHz 390 pF Reverse transfer capacitance C rss 1.7 Output capacitance C oss 12 Effective output capacitance C V = 0 to 400 V, V = 0 V 20 o(er) DS GS Gate resistance
in „Push/Pull in spannungsgeregelter Stromquelle / Frage zur Auslegung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
tk18a60v_en_datasheet_110131.pdf
D Drain-source on-resistance R DS(ON) VGS = 10 V,DI = 9 A 0.165 0.19 Ω 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Input capacitance C V = 300 V, V = 0
in „Mosfet defekt - kann der Ersatztyp verwendet werden?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
HYG015N10NS1TA_datasheet.pdf
Conditions Min Typ. Max Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage V GS0V ,DS= 250μA 100 - - V V DS=100V,VGS=0V - - 1 μA IDSS Drain-to-Source Leakage Current T J=125°C - - 50 μA V GS(th) Gate Threshold Voltage V DS=VGS, DS= 250μA 2 3 4 V IGSS Gate-Source Leakage Current V GS=±20V,V DS=0V - - ±100 nA RDS(ON) Drain-Source On-State Resistance V GS= 10V,DS=100A - 1.2 1.5 mΩ Diode Characteristics V SD Diode Forward Voltage ISD=100A,V GS=0V - 0.83 1.2 V trr Reverse Recovery Time - 97 -
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PDF
datasheet_ao3400.pdf
Drain-Source Breakdown Voltage ID=250 A, V GSV 30 V V =30V, V =0V 1 IDSS Zero Gate Voltage Drain Current DS GS A T J55°C 5 IGSS Gate-Body leakage current V DSV, V =GS12V 100 nA VGS(th) Gate Threshold Voltage V DS GS D =250 A 0.65 1.05 1.45 V I On state drain current V =4.5V, V =5V 30 A D(ON) GS DS V GS=10V
in „24v rgbww controller mosfets und ic's“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
1811081213_Alpha---Omega-Semicon-AO3400A_C20917.pdf
Drain-Source Breakdown Voltage ID=250 A, V GSV 30 V V =30V, V =0V 1 IDSS Zero Gate Voltage Drain Current DS GS A T J55°C 5 IGSS Gate-Body leakage current V DSV, V =GS12V 100 nA VGS(th) Gate Threshold Voltage V DS GS D =250 A 0.65 1.05 1.45 V I On state drain current V =4.5V, V =5V 30 A D(ON) GS DS V GS=10V
in „Suche Bauteil XOXL-3E“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AO3400A.pdf
Drain-Source Breakdown Voltage ID=250 A, V GSV 30 V V =30V, V =0V 1 IDSS Zero Gate Voltage Drain Current DS GS A T J55°C 5 IGSS Gate-Body leakage current V DSV, V =GS12V 100 nA VGS(th) Gate Threshold Voltage V DS GS D =250 A 0.65 1.05 1.45 V I On state drain current V =4.5V, V =5V 30 A D(ON) GS DS V GS=10V
in „Umsetzung eines 5V Output mit ESP32 und AQY Halbleiterrelais“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TPH1R104PB_Datasheet.pdf
Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: DS(ON) = 0.95 mΩ (typ.) (GS = 10 V) (4) Low leakage current: IDSS= 10 µA (max) (V DS = 40 V) (5) Enhancement mode: V th= 2.0 to 3.0 V DS = 10 V, D = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source
in „MOSFET's umgekehrt betrieben“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TPH1R104PB_datasheet_en_20181228.pdf
Regulators 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: DS(ON) = 0.95 mΩ (typ.) (GS = 10 V) (4) Low leakage current: IDSS= 10 µA (max) (V DS = 40 V) (5) Enhancement mode: V th= 2.0 to 3.0 V DS = 10 V, D = 0.5 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source
in „Einfluss von thermischen Vias auf den Wärmetransport eines MOSFETs“ · Platinen ·