Rtd resistance // Simple Linear equation: // At 35 degree Celsius, the equivalent resistance of a PT100 is 113.607 Ohm. Trtd = (Rrtd - 100.0) * (35.0/13.607); } void save (unsigned long addr, unsigned long value) { unsigned long Flash_Status = 0; for ( i = 0; i < 2; i++) { FEEADR = addr + 2 * i; FEEDAT
1.0 c e e 0.6 w d P a e 0.2 r 0.4 a T F e e A 0.1 a 0.2 TLMeasured e at the Cathode Band Terminal D =pt /T p A 0 0 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 Lead Temperature (°C) Average Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics
https://encyclopedia2.thefreedictionary.com/Magnetostriction
(Δl/l) × 10⁻⁶
100
80
60% Co, 40% Fe
60
40
20
54% Pt, 46% Fe
0
Co (cast)
500
1 Oe ≅ 79,5775 A/m
H (oersteds)
1000
Fe
1500
-20
Co (annealed)
-40
Ni
-60
NiOFe₂O₃
Figure 2. Dependence of longitudinal magnetostriction of
x 1.0E-9 10E-8 N 1.08 1.08 1.08 1.08 1.08 1.08 RS 25 10 10 5 10 15 PB V 0.6 0.6 0.6 0.56 0.64 0.64 PT 2 2 2 2 2 2 M 0.5 0.5 0.5 0.5 0.5 0.5 4 Typical Parameters 100 10.000 1000 100 ) A ( m E T 10 1,000 75 C N A E T R ) 50 S U 100°C n E C 1 50°C ( 100 25 R 100 R I I A 25°C M W 0°C TA= 25°C N O 0.1 10
A G D B F
G H I J K L
M N O P Q R S
T U V M W X Y Z
POWER SUPPLY
PT4465-00
NO. 8191
DATE 1989-07
INPUT 100VAC (85-132VAC)
200VAC (170-250VAC)
47-66Hz
OUTPUT +5.2V 1.4-5A
+15V 0.2-2.5A
-15V 0.2-1.3A
Fuji Electrochemical Co., Ltd. JAPAN
A:500ns TR:Y1:AC PT:0% Y1:1V~ Y2:2V~ ENV POWER AUTOSET INTENS FOCUS PTR. STOR. MODE SAVE SET TR HOLD RECALL EXIT Y-POS.I X-POS.I VOLTS/DIV. TRIG. VOLTS/DIV. TRIG. MODE TIME/DIV. MAG. 20V 20V 100s 50ns CHI CHI CHI ALT. VAR
Junction temperature Tj 115 °C Storage temperature range T 55~150 °C stg Operating temperature range T 40~100 °C opr Lead soldering temperature (10s) T 260 °C sol Total package power dissipation PT 330 mW Total package power dissipation derating(Ta ≥ 25°C) ∆P T °C 4.4 mW / °C Isolation voltage (AC, 1 min.,
Widerstandsprüfung 995174101A 2 Bild 2: Schaltbild des Ein empfindlichen Empfän- S1 7 C11 C12 C13 R 7 R k gers LS-E 100 4 IC1 2 C 3 dient dabei zur gleich- ST1 TLC271 100n 100n 100u C4 4 ker ker 16V spannungsmäßigenEntkopp- 9V 4 7 3 k D2 lung und C 5 zur Schwing- ST2 Block R 4 R 4 Vorverstärker neigungsunterdrückung.
instruction 41.7ns(f(BCLK)=24MHz, VCC1=3.0 to 5.5V) 62.5ns(f(XIN)=16MHz, VCC=4.2 to 5.5V) execution time 100ns(f(BCLK)=10MHz, VCC1=2.7 to 5.5V) 100ns(f(XIN)=10MHz, VCC=2.7 to 5.5V, with software one-wait) Supply voltage VCC1=3.0 to 5.5V, VCC2=3.0V to VCC1 VCC=4.2 to 5.5V(f(XIN)=16MHz, without (f(BCLK)=24MHz
version)-1(Note1) Item M16C/62P M16C/62M Shortest instruction 41.7ns(f(BCLK)=24MHz, VCC1=3.0 to 5.5V) 100ns(f(XIN)=10MHz, VCC=2.7 to 3.6V) execution time 100ns(f(BCLK)=10MHz, VCC1=2.7 to 5.5V) 142.9ns(f(XIN)=7MHz, VCC=2.2 to 3.6V, with software one-wait) Supply voltage VCC1=3.0 to 5.5V, VCC2=3.0V to VCC1
with the addition of 6 programmable inputs for Voltage (0 to 10 V), Current (0/4 to 20 mA) or RTD PT100 sensors. Get advantage of 2 analog outputs, programmable in Voltage (0 to 10 V) or Current (0/4 to 20 mA) plus 4 PWM digital outputs.
arduino.cc/pzo
n 0.088 i t e 0.25 100mA s 0.086 - r O n 0.084 e 0.20 O r c 0.082 o 0.15 u - o 0.080 i - r 0.10 a 0.078 ,) r ( 0.05 ) 0.076 D ( R 0 50 100 150 200 D 0.1 1.0 10.0 100.0 1000.0 R Tj Junction Temperature (°C) GS, Gate-Source
Fig. 7. Gate Charge Fig. 8. Capacitance 16 100,000 VCE= 300V f = 1 MHz 14 IC= 80A I = 10mA s 12 G a a C F10,000 ies l10 c V P - 8 - E c V n C 6 i oes a 1,000 p 4 C 2 Cres 0 100 0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 40 QG- NanoCoulombs
Fig. 7. Gate Charge Fig. 8. Capacitance 16 100,000 VCE= 300V f = 1 MHz 14 IC= 80A I = 10mA s 12 G a a C F10,000 ies l10 c V P - 8 - E c V n C 6 i oes a 1,000 p 4 C 2 Cres 0 100 0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 40 QG- NanoCoulombs
Blatt 3: die Stromversorgungen +5V +3,3V U4 LF-33 1 2 IN DUT N C4 G C3 C13 C14 C15 C16 10u/10 3 10u/10 100n 100n 100n 100n D D D D D D D N N N N N N N G G G G G G G U5 AMS 1117-1.2V +1.2V 3 2 IN OUT NOUT1 4 G C5 C6 C10 C11 C12 1 10u/10 100n 100n 100n 100n N N N N N N G G G G G G LED Drahtanschluss - X -1
POWER SUPPLY REJECTION vs FREQUENCY vs FREQUENCY 140 140 G = 1000V/V ) 120 ) 120 d G = 1000V/V d G = 100V/V ( ( i 100 i 100 c G = 100V/V c e 80 e 80 R R l l p 60 p 60 G = 10V/V S S r 40 G = 10V/V r 40 w w G = 1V/V o G = 1V/V o P 20 P 20 0 0 10 100 1k 10k 100k 1M 10 100 1k 10k 100k 1M Frequency (Hz) Frequency
200 290 450 C CE Collector-emitter saturation voltage VCEsat mV IC= 10 mA, IB= 0.5 mA - 90 300 IC= 100 mA, IB= 5 mA - 200 650 Base emitter saturation voltage V BEsat IC= 10 mA, IB= 0.5 mA - 700 - IC= 100 mA, IB= 5 mA - 900 - 2) Base-emitter voltage- VBE(ON) I = 2 mA, V = 5 V 580 660 700 C CE IC= 10 mA
using only 1 channel Peak load current Ipeak 1.5 A 0.3 A 0.24 A A connection: 100 ms (1 shot)L= DC Power dissipation P out 600 mW Total power dissipation PT 650 mW I/O isolation voltage V iso 1,500 V AC Temperature limits Operating Topr –40°C to +85°C –40°F to +185°F Non-condensing
t t ) e c P r p ( P 50 a e n C w g i V , Measured at Stand-Off P t c 100 Voltage V e r u WM l e 25 - P D J Uni-Directional TJ= 25 °C k C Bi-Directional f = 1.0 MHz e Vsig= 50 mVP-P P 0 10 1 10 100 200 0 25 50 75 100 125 150 175 200 T J Initial Temperature (°C) V WM - Reverse
2. I TSMRATING 100 MAX. 140 Initial T25˚C ISM A A 0 π 2 π t t 120 N = 1 n e r r u 10 u 100 C e t a 80 60 Hz t s - n 50 Hz O TC= 125˚C 25˚C O 60 - e i 1.0 r S 40 - M I 20 0.1 0 0 1 2 3 4 5 1 5 10 50 100 νT - On-state Voltage
Ratio vs. Frequency TA=25°C. at 1 rnA Current. 155 iii :!! w "' ." w CI) z IF '30Mfiz I--+--+-+~- + PtO-11.0 mWB RL =100 n 5 L - ~ ~ ~ ~ ~ ~ ~ ~ L - ~ ~ ~ ~ 0.1 10 100 FREOUENCY (GHzl LOCAL OSCILLATOR POWER (mWI Figure 3. Typical Noise Figurevs. Frequency. The mount is Figure 4. Single Sideband Noise
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