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Datei
shugart.txt
from pin signal pin signal pin signal pin signal pin signal NC 4,6 NC Drive 8 True ready/NC Drive 10 Two sided/FD2S Drive 22 RDY Drive 24 Sector/NC +5 V 1,3,5 1 POW4 GND 15,17,19 2 POW3 GND 23,25 3 POW2 +12 V 4 POW1 FDC 2 DENSEL 2 REDWC 5 LSD 2 DENSEL/REDWC FDC 4 INU/HLD 4 NC 16 INU/DLOCK FDC 6 DS3/4 6 NC 32 SEL4 Drive 2 IDX 8 IDX 8 INDEX 6 IDX 20 IDX FDC 4 DRSEL 10 DS0/1 10 MOTEA 7 MOT1 26 SEL1 FDC 12 DS1/2 12 DRVSB 8 DS2 28 SEL2 FDC 14 DS2/3 14 DRVSA 9 DS1 30 SEL3 FDC 10 MOTon 16 MOTON 16 MOTEB 10 MOT2 18 LSD/HDL FDC 12 DIR 18 DIREC 18 DIR 11 DIR 34 DIR FDC 14
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IRF7314_P-Channel_Dual_20V_5.3A_0.058Ohm.pdf
C r e J C u 10 e TJ= 150 C C r i o r S 10 D TJ= 25 C o s n e a e 1 r R , , D S - - V DS = -10V V = 0 V 1 20µs PULSE WIDTH 0.1 GS 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VGS , Gate-to-Source Voltage
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irf7314.pdf
C r e J C u 10 e TJ= 150 C C r i o r S 10 D TJ= 25 C o s n e a e 1 r R , , D S - - V DS = -10V V = 0 V 1 20µs PULSE WIDTH 0.1 GS 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VGS , Gate-to-Source Voltage
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irlb3034pbf-Datasheet.pdf
BY R DS (on) ) A1000 t t n1000 e r r 100µsec C C 1msec n T = 175°C e 100 r J r D 100 o LIMITED BY PACKAGE s - 10msec e - 10 e T = 25°C i R J r DC ,D 10 , IS ID 1 Tc = 25°C Tj = 175°C V GS = 0V Single Pulse 1.0
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IRLB3034PbF.pdf
BY R DS (on) ) A1000 t t n1000 e r r 100µsec C C 1msec n T = 175°C e 100 r J r D 100 o LIMITED BY PACKAGE s - 10msec e - 10 e T = 25°C i R J r DC ,D 10 , IS ID 1 Tc = 25°C Tj = 175°C V GS = 0V Single Pulse 1.0
in „Aufwärtsschaltregler bauen“ · Analoge Elektronik und Schaltungstechnik ·
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IRLB3034.pdf
BY R DS (on) ) A1000 t t n1000 e r r 100µsec C C 1msec n T = 175°C e 100 r J r D 100 o LIMITED BY PACKAGE s - 10msec e - 10 e T = 25°C i R J r DC ,D 10 , IS ID 1 Tc = 25°C Tj = 175°C V GS = 0V Single Pulse 1.0
in „Logic Level Mosfet - Welcher "kann mehr"“ · Analoge Elektronik und Schaltungstechnik ·
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MBI5030.pdf
” level V IL Ta = -40~85ºC GND - 0.3*V DD V Output Leakage Current IOH V DS17.0V - - 0.5 µA V I = +1.0mA - - 0.4 V OL OL Output Voltage SDO V I = -1.0mA 2.9 - - V OH OH IOUT= 10.5mA Current Skew dIOUT R ext 920Ω - - ±3 % V DS1.0V Output Current vs. V DSwithin 1.0V and 3.0V,
in „Atmega8+MBI5030+SPI“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BLF188XR_BLF188XRS.pdf
drain-source breakdown V GS = 0 V; D = 5.5 mA 135 - - V voltage V gate-source threshold voltage V = 10 V; I = 550 mA 1.25 1.9 2.25 V GS(th) DS D VGSq gate-source quiescent voltage V DS = 50 V; ID= 20 mA 0.68 1.5 1.88 V BLF188XR_BLF188XRS#6 All information provided in this document is subject to legal
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21483b.pdf
: tR= tF= 20nsec. 9: R L 2kΩ, tested @ 10kΩ. 10: Full temperature rangeIN= -0.1V. 2002 Microchip Technology Inc. DS21483B-page 3 TC9400/9401/9402 TC940X ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical CharacteristicsDD= +5V, VSS= -5V, GND
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ds1308.pdf
2 DS1308 Low-Current I C RTC with 56-Byte NV RAM General Description Benefits and Features The DS1308 serial real-time clock (RTC) is a low-power, ●● Compatible with Crystal ESR Up to 100kΩ Allows a full
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Datei
main.c
. // Achtung: // Pro Sekunde können max. ca. 10 Sensoren ausgelesen werden! if ( DS18X20_read_meas( tempID, &subzero,&cel, &cel_frac_bits) == DS18X20_OK ) { ow_array[i] = DS18X20_temp_to_decicel(subzero, cel, cel_frac_bits); //TWert = DS18X20_temp_to_decicel
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DS8816A-05.pdf
All rights reserved. is a registered trademark of Richtek Technology Corporation. © www.richtek.com DS8816A-05 March 2019 10 RT8816A Current Limit and UVP OVP VIN= 12V, PVCC = 5V VOUT (500mV/Div) V SNS (500mV/Div) I (10A/Div) UGATE1 UGATE1 (20V/Div) (20V/Div) LGATE1 LGATE1 (5V/Div) (5V/Div) VIN= 12V,
in „Spule auf Synchronwandler wird innerhalb sekunden brennend heiß“ · Analoge Elektronik und Schaltungstechnik ·
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MRF175GV.pdf
otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (1) Gate Threshold Voltage DS = 10 V, D = 100 mA) VGS(th) 1.0 3.0 6.0 Vdc Drain–Source On–Voltage (GS = 10 V,DI = 5.0 A) V DS(on) 0.1 0.9 1.5 Vdc Forward Transconductance (DS = 10 V,DI = 2.5 A) gfs 2.0 3.0 — mhos DYNAMIC CHARACTERISTICS
in „Dimensionierung eines Kühlkörpers für HF-Modul“ · HF, Funk und Felder ·
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Datei
ds1820.c
{ ds1820_skip_rom(); ds1820_convert_t(); rc = ds1820_reset_pulse(); if (rc == DS1820_ERR_OK) { ds1820_skip_rom(); ds1820_read_scratchpad(sp); rc = ds1820_reset_pulse(); sp->crc_calc = ds1820_crc8((char *)
in „DS18S20 in C“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SST39LF010-SST39LF020-SST39LF040-SST39VF010-SST39VF020-SST39VF040-Data-Sheet-DS20005023.pdf
Load CL = 30 pF for SST39LF010/020/040 5 ns C L= 100 pF for SST39VF010/020/040 Note 1: See Figure 7-10 and Figure 7-11. DS20005023E-page 8 2000-2025MicrochipTechnologyInc.anditssubsidiaries SST39LF010/020/040/SST39VF010/020/040 6.0 DC CHARACTERISTICS TABLE 6-1: DC OPERATING CHARACTERISTICS (V DD = 3.0V
in „[V] 10St. neue OPV Flash Micochip SST39LF040 4Mb 3-3.6V Parallel Flash PLCC32 (10€)“ · Markt ·
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AL5801.pdf
Breakdown Voltage BV DSS 100 ⎯ ⎯ V V GS= 0V, D = 250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 µA V DS= 60V, VGS= 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA V GS= ±20V, VDS= 0V ON CHARACTERISTICS Gate Threshold Voltage V GS(th) 2.0 ⎯ 4.1 V V DS= VGS, D = 250µA ⎯ 0.85 V GS= 10V, D = 1.5A Static Drain-Source
in „Suche Konstantstromquelle effizient, klein und günstig.“ · Analoge Elektronik und Schaltungstechnik ·
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irlz24n.pdf
i 2.5 t T J 175°C e e R r n u 10 O 2.0 C c d c u e u o l1.5 o - a - - r t i N n 1 r (1.0 a D r , , n D ( 0.5 I V = 15V D DS R 0.1 20µs PULSE WIDTH 0.0 V GS = 10V A 2 3 4 5 6 7 8 9 10A -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VGS
in „IR2127 Beschaltung als Low Side Schalter + Mosfet“ · Mikrocontroller und Digitale Elektronik ·
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Datei
main.c
#include "lcd.h" #include <util/delay.h> #include <avr/interrupt.h> #include "i2cmaster.h" #define DS1621_A0 0 #define DS1621_A1 1 #define DS1621_A2 2 #define DS1621_DEVICE ((0<<DS1621_A2)|(0<<DS1621_A1)|(0<<DS1621_A0)) #define DS1621_ADDRESS (0x90 | DS1621_DEVICE) #define MY_SDA PC4 #define MY_SCL PC5
in „While Schleife“ · Mikrocontroller und Digitale Elektronik ·
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Datei
twi_lib.h
Regeister #define PCF8583_StatusReg 0x00 // Control Status Register #define PCF8583_DezSecReg 0x01 // 1/10 + 1/00 sek #define PCF8583_SecondReg 0x02 // 10Sek + 1Sek #define PCF8583_MinuteReg 0x03 // 10Min + 1Min #define PCF8583_HourReg 0x04 // 10h + 1h #define PCF8583_DayReg 0x05 // Year, 10Tag + 1Tag - year
in „TWI MUX per SW an einem Port“ · Mikrocontroller und Digitale Elektronik ·
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PDF
40001893B.pdf
MOSI T2 20 18 15 PC3 AIN9 X9/Y9 SS WO3 LUT1- IN0 21 PC4 BREAK AIN10 X10/Y1 WO4 TCB1 LUT1- 0 WO IN1 22 PC5 AIN11 X11/Y1 WO5 LUT1- 1 IN2 DS40001893B-page 18 © 2017 Microchip Technology Inc. Datasheet Preliminary 8-bit AVR Microcontroller Note: 1. Pins names are of type
in „ATtiny1614 CPU Takt Problem“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ATtiny1614_1616_1617.pdf
MOSI T2 20 18 15 PC3 AIN9 X9/Y9 SS WO3 LUT1- IN0 21 PC4 BREAK AIN10 X10/Y1 WO4 TCB1 LUT1- 0 WO IN1 22 PC5 AIN11 X11/Y1 WO5 LUT1- 1 IN2 DS40001893B-page 18 © 2017 Microchip Technology Inc. Datasheet Preliminary 8-bit AVR Microcontroller Note: 1. Pins names are of type
in „124Bus Beschreibung verfuegbar?“ · Mikrocontroller und Digitale Elektronik ·
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50002370A.pdf
▯▯▯PP ▯▯▯ ▯▯▯ ▯▯▯ ▯▯▯ ▯ ▯ ▯ ▯ ▯ ▯ ▯ ▯ ▯ ▯ FIGURE 1-8: RN4677 HOST PCB MOUNTING SUGGESTION DS50002370A-page 10 Advance Information 2015 Microchip Technology Inc. RN4677 2.0 APPLICATION INFORMATION 2.1 RN4677 Ceramic Chip Antenna The RN4677 module contains an integral ceramic chip antenna. The
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DS_K4B4G1646D-BC_I_P_Rev102.pdf
15 -10 NOTE : 1. Cell contents shaded in red are defined as ’not supported’. - 62 - Rev. 1.02 K4B4G1646D datasheet DDR3SDRAM [ Table 60 ] Derating values for DDR3-1866/2133 tDS/tDH - (AC135) tDS, tDH derating
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sm6t100a.pdf
1000 SM6T6V8A SM6T6V8CA 1000 SM6T15CA SM6T15A 100 SM6T30CA SM6T30A SM6T68CA 100 SM6T100CA SM6T68A 10 SM6T100A SM6T220CA SM6T220A V R(V) VR(V) 10 1 1 10 100 1000 1 10 100 1000 DS0684 - Rev 14 page 4/12 SM6TxxA, SM6TxxCA Characteristics Figure 10. Peak forward voltage drop versus peak forward Figure 9
in „Suche Diode GP839“ · Analoge Elektronik und Schaltungstechnik ·
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Arduino_IN9_clock.ino
@ 19:57:11 for the 3rd day of the week -> T1157193021015 seconds = (byte) ((Serial.read() - 48) * 10 + (Serial.read() - 48)); // Use of (byte) type casting and ascii math to achieve result. minutes = (byte) ((Serial.read() - 48) *10 + (Serial.read() - 48)); hours = (byte) ((Serial.read() - 48) *10 + (Serial.read() - 48)); day = (byte) (Serial.read() - 48); date = (byte) ((Serial.read() - 48) *10 + (Serial.read() - 48)); month = (byte) ((Serial.read() - 48) *10 + (Serial.read() - 48)); year = (byte) ((Serial.read() - 48) *10 + (Serial.read() - 48)); Wire.beginTransmission(DS3231_I2C_ADDRESS);
in „Physikprojekte“ · Offtopic ·
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PDF
93LC46.pdf
www.microchip.com. FIGURE 1-1: SYNCHRONOUS DATA TIMING CS VIH 4 2 3 VIL 5 VIH CLK V IL 7 8 V IH DI VIL 9 9 10 DO VOH (Read) VOL 11 10 DO VOH (Write) Status Valid V OL 2004 Microchip Technology Inc. DS21712B-page 3 93LC46/56/66 TABLE 1-1: INSTRUCTION SET FOR 93LC46: ORG = 1 (X 16 ORGANIZATION) Req. CLK Instruction
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LM2677_2000.pdf
Performance Characteristics 2 M L Normalized Line Regulation Efficiency vs Input Voltage Output Voltage DS101301-10 DS101301-11 DS101301-9 Efficiency vs LOAD Switch Current Limit Operating Quiescent Current DS101301-12 DS101301-4 DS101301-5 Standby Quiescent Current ON/OFF Threshold Voltage ON/OFF Pin Current
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PDF
NTMFS4C09N.pdf
Charge Q 3.4 nC GS VGS = 4.5 V, DS = 15 V;DI = 30 A Gate−to−Drain Charge Q 5.4 GD Gate Plateau Voltage V 3.1 V GP Total Gate Charge Q V = 10 V, V = 15 V; I = 30 A 22.2 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay
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PDF
LDO_Oscillosation.pdf
Pole and ZeroAnalysis The output impedance Zo in the above ac prototype is given by 1 1 Zo = R ds(R1+ R 2) RESR + …(2) SCb SCo And Rds(R 1 R 2 R ds,Co >> Cb ,Rds> R ESR , Therefore, Zo can approximate to 1 1 R ds 1 Z O ≈ Rds RESR + = R ESR+ SCb SC O SC b ds+ 1 SC O 1 RdsRESR + SC O R R + 1 SC R +1 d ESR SC = b ds = O Rds 1 1 SC R +1 + RESR+ SC Rds+ (SC b ds+ 1)RESR+ (SC b ds+ 1)SC b ds O O 2 AN025 SC O Rds ESR+ R ds = 2 SC O +ds C C R O b ds ESR+ SC O ESR + SC b ds Rds(SC O ESR+1 ) ≈ (SC R +1 SC R( +1) …(
in „Low Drop Netzteil (Diskret) / Theoretischer Versuch“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
OPAmp_Layout.pdf
Technology Inc. DS01258B-page 9 AN1258 Since the MCP9700 outputs a voltage proportional to temperature, OUT needs to be sampled by an ADC VDD that uses an absolute voltage reference. RF 10 Ohm U1 The absolute accuracy
in „Transimpedanzwandler für Photodiode“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
CYStech_MTB09N03H8.pdf
Min. Typ. Max. Unit Test Conditions Static BV DSS 30 - - V V GS, I D250μA VGS(th) 1.0 1.7 3.0 V V DS= V GSI D250μA G FS *1 - 20 - S V DS=5V, ID=20A GSS - - ± 100 nA V GS20 DSS - - 1 μA V DS=24V, V GS =0 - - 25 V DS=20V, V GS =0, Tj=125°C ID(ON)*1 50 - - A V DS=10V, V GS =10V - 8 9.5 m Ω V GS=10V, ID
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DS60VGPV.pdf
Lebensdauer, dakeine Betriebs- undLeckströme Max.Ableitstoßstrom(8/20)μsImax 40kA 40kA entstehen. Der DS60VGPV ist standardmäßig mit Fernsignalisierung Nennableitstoßstrom(8/20)μsln 20kA 20kA erhältlich. Durch die galvanische Trennung ist der DS60VGPV auch Blitzstoßstrom(10/350)μs Iimp 12,5kA 12,5kA SchutzpegelbeiIn
in „USB Steckdose, Klingeltrafo Gleichstrom, Zukunft“ · Haus & Smart Home ·
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PDF
datasheet_ao3400.pdf
=5.8A 4 800 Ciss ) ) ( t 3 e 600 o c ( t S c VG2 a 400 a C C oss 1 200 Crss 0 0 0 2 Q (nC) 6 8 0 5 10 V (Volts) 20 25 30 Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100.0 1000 TA=25°C 10.0 10 s R DS(ON) 100 ) limited ) s 100 s ( p e A 1.0 1ms w (D P I 10ms 10 0.1 TJ(Max)50°C T =25°C 10s A DC 1 0.0 0.00001 0.001 0.1 10 1000 0.01 0.1 1 10 100 V (Volts) DS Pulse Width (s) Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note F) Operating
in „24v rgbww controller mosfets und ic's“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
1811081213_Alpha---Omega-Semicon-AO3400A_C20917.pdf
=5.7A 4 800 Ciss ) ) ( t 3 e 600 o c ( t S c VG2 a 400 a C C oss 1 200 Crss 0 0 0 2 Q (nC) 6 8 0 5 10 V (Volts) 20 25 30 Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100.0 1000 TA=25°C 10.0 10 s R DS(ON) 100 ) limited W s 100 s r p e A 1.0 1ms w (D P I 10ms 10 0.1 TJ(Max)50°C T =25°C 10s A DC 1 0.0 0.00001 0.001 0.1 10 1000 0.01 0.1 1 10 100 V (Volts) DS Pulse Width (s) Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note F) Operating
in „Suche Bauteil XOXL-3E“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AO3400A.pdf
=5.7A 4 800 Ciss ) ) ( t 3 e 600 o c ( t S c VG2 a 400 a C C oss 1 200 Crss 0 0 0 2 Q (nC) 6 8 0 5 10 V (Volts) 20 25 30 Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics 100.0 1000 TA=25°C 10.0 10 s R DS(ON) 100 ) limited W s 100 s r p e A 1.0 1ms w (D P I 10ms 10 0.1 TJ(Max)50°C T =25°C 10s A DC 1 0.0 0.00001 0.001 0.1 10 1000 0.01 0.1 1 10 100 V (Volts) DS Pulse Width (s) Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note F) Operating
in „Umsetzung eines 5V Output mit ESP32 und AQY Halbleiterrelais“ · Mikrocontroller und Digitale Elektronik ·
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index.html
'#eee'; ctx.lineWidth = 1; for (let i = 0; i <= 10; i++) { const yGrid = padding + i * (h - padding * 2) / 10; ctx.beginPath(); ctx.moveTo(padding, yGrid); ctx.lineTo(w - padding, yGrid); ctx.stroke(); } // Vertical grid (10 lines for time) for (let
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MRF272L.pdf
otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS Gate Threshold Voltage DS = 10 V, D = 100 mA) VGS(th) 1.5 2.5 4.5 Vdc Drain–Source On–Voltage (VGS = 10 V,DI = 5.0 A) V DS(on) 0.5 0.9 1.5 Vdc Forward Transconductance (VDS = 10 V,DI = 2.5 A) g fs 3.0 3.75 — mhos DYNAMIC CHARACTERISTICS
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PDF
RF_PICKIT.pdf
. rfPIC™ Development Kit 1 CD-ROM 8. PICkit 1 FLASH Starter Kit Printed Circuit Board 9. USB Cable 10. PICkit™ 1 FLASH Starter Kit CD-ROM 11. MPLAB IDE CD-ROM © 2003 Microchip Technology Inc. Preliminary DS70093A-page 5 rfPIC™ Development Kit 1 User’s Guide 1.4 GETTING STARTED WITH THE rfPIC DEVELOPMENT
in „[V] Verkaufe RF PIC KIT Transmitter & Receiver Module“ · Markt ·
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MCP_2210.pdf
chipKIT, devices in life support and/or safety applications is entirely at chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, the buyer’s risk, and the buyer agrees to defend, indemnify and dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, hold harmless Microchip from any and all damages, claims, FanSense, HI-TIDE
in „USB - SPI Adapter“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PICkit_3_Programmer_Application_User_s_Guide_50002158a.pdf
to the PICkit 3. An example is shown in Figure 2-19 where the Unit ID is “BUR102111707”. FIGURE 2-10: UNIT ID 2013 Microchip Technology Inc. DS50002158A-page 23 PICkit™ 3 Programmer Application User’s Guide NOTES: DS50002158A-page 24 2013 Microchip Technology Inc. PICkit™ 3 PROGRAMMER APPLICATION
in „PICkit3 und Windows 11“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlr2905_1_.pdf
1000 OPERATION IN THIS AREA LIMITED A BY R DS(on) ( n e ) u ( C t 100 10µs i e a r D u e 100 C 100µs r a e T J 175°C r e , R D 10 , I 1ms S T J 25°C I T = 25°C 10ms C TJ = 175°C 10 VGS = 0V A 1 Single Pulse A 0.4 0.8 1.2 1.6 2.0 2.4 1 10 100 V ,
in „Motortreiber“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLU2905.pdf
1000 OPERATION IN THIS AREA LIMITED A BY R DS(on) ( n e ) u ( C t 100 10µs i e a r D u e 100 C 100µs r a e T J 175°C r e , R D 10 , I 1ms S T J 25°C I T = 25°C 10ms C TJ = 175°C 10 VGS = 0V A 1 Single Pulse A 0.4 0.8 1.2 1.6 2.0 2.4 1 10 100 V ,
in „High Power LED Driver“ · Mikrocontroller und Digitale Elektronik ·
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PDF
mcp6004.pdf
2 - + + - 13 VIND MCP6001U V + 12 V + - INA 3 IND SOT-23-5 VDD 4 11 VSS V SS VIN 1 + 5 VDD V INB 5 10 VINC V SS 2 - V INB 6 B+ C - 9 VINC R1 VIN 3 4 VOUT V V R 2 OUTB 7 8 OUTC R 1 Gain = 1 + -- V R 2 REF Non-Inverting Amplifier 2003 Microchip Technology Inc. DS21733D-page 1 MCP6001/2/4 1.0 ELECTRICAL
in „Nichtinvertierender Operationsverstärker“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
tk18a60v_en_datasheet_110131.pdf
specified) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current GSS VGS = ±30 V, DS= 0 V ±1 µA Drain cut-off current DSS VDS = 600 V, GS= 0 V 1 Drain-source breakdown voltage V(BR)DSS D = 10 mA, GS = 0 V 600 V Gate threshold voltage V V = 10 V, I = 0.9 mA 2.5 3.5 th DS
in „Mosfet defekt - kann der Ersatztyp verwendet werden?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Spartan-3A_FPGA_Family.pdf
Information. Added references to Extended Spartan-3A Family. Removed reference to SCD 4103. 08/19/10 2.0 Updated Table 2 to clarify TQ/VQ size. DS529-1 (v2.0) August 19, 2010 www.xilinx.com 7 Introduction and Ordering Information 8 www.xilinx.com DS529-1 (v2.0) August 19, 2010 10 Spartan-3A FPGA Family
in „Ultraschallgerät(Medizin) HMI Touch Vertikale Streifen“ · FPGA, VHDL & Co. ·
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PDF
PAM8302A.pdf
start time for SD pin is recommended to delay after rising edge of V DD for 1ms ~100 ms (typically10ms is recommended), depending on customer’s application condition. PAM8302A 8 of 13 September 2018 www.diodes.com © Diodes Incorporated Document number: DS41333 Rev. 4 - 2 PAM8302A Ordering Information
in „PAM8302A Dimensionierung Ci und R“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF4905.pdf
T c 25°C TC= 175°C 1 A 1 A 0.1 1 10 100 0.1 1 10 100 -V , Drain-to-Source Voltage (V) -V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.0 I = -64A c D ) a ( s t s
in „Frage zu Push Pull Abwärtswandler“ · Analoge Elektronik und Schaltungstechnik ·
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AN101_An_Introduction_to_FETs_70594__VIS.pdf
by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70594. Siliconix 1 10-Mar-97 AN101 In addition to the channel material, a JFET contains two layer as V DS increases. The curve approaches the level of ohmic (non-rectifying) contacts: the source and the drain. thelimitingcurrentI
in „mit 2,7V schalten“ · Mikrocontroller und Digitale Elektronik ·
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93LC66.pdf
RDY/BSY) 12 EWDS 1 00 0 0 X X X X X X X — HIGH-Z 12 EWEN 1 00 1 1 X X X X X X X — HIGH-Z 12 READ 1 10 A8 A7 A6 A5 A4 A3 A2 A1 A0 — D7 – D0 20 WRITE 1 01 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 – D0 (RDY/BSY) 20 WRAL 1 00 0 1 X X X X X X X D7 – D0 (RDY/BSY) 20 DS21795A-page 4 2003 Microchip Technology Inc. 93AA66A
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24fc256.pdf
Control Byte Address High Byte Address Low Byte A A A A A A A A A A A A 1 0 1 0 2 1 0 R/W x 14 13 12 11 10 9 8 7 • • • • • • 0 Control Chip Code Select Bits x = “don’t care” bit DS20001203Y-page 10 1998-2022MicrochipTechnologyInc.anditssubsidiaries 24AA256/24LC256/24FC256 6.0 WRITE OPERATIONS Note: Page
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