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MIC5233-3.3YS-microchip-20221000.pdf
Systems 2 R1 C = 2.2 μF • 3-4 Cell Li-Ion Battery Input Range CIN 1.0 μF CERAMIC 3 4 OFF ON EN R2 GND= 18 μA Package Types MIC5233 MIC5233 5-Pin SOT23 3-Pin SOT223 (Top View) (Top View) EN GND IN 3 2 1 GND 4 L3xx 4 5 1 2 3 NC OR ADJ OUT IN GND OUT 2018-2022MicrochipTechnologyInc.anditssubsidiaries DS20006033E-page
in „STM32F302C8T6 Schaltplanüberprüfung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BME280_Datasheet.pdf
settings 100 90 80 ] 70 [ p 60 filter off s 2 t e 50 4 n 8 p 40 16 e R 30 20 10 00 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 Number of samples Figure 7: Step response at different IIR filter settings BST-BME280-DS001-10 | Revision 1.1 | May 2015 Bosch Sensortec © Bosch Sensortec GmbH reserves all rights
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Tiny15L.pdf
Chantrerie TEL (852) 2721-9778 BP 70602 FAX (852) 2722-1369 44306 Nantes Cedex 3, France TEL (33) 0 2 40 18 18 18 Japan FAX (33) 0 2 40 18 19 60 Atmel Japan K.K. 9F, Tonetsu Shinkawa Bldg. Atmel Rousset Zone Industrielle 1-24-8 Shinkawa 13106 Rousset Cedex, France Chuo-ku, Tokyo 104-0033 TEL (33) 4-4253-6000
in „Frequenzschalter“ · Mikrocontroller und Digitale Elektronik ·
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PH2520U.pdf
Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source ID= 250 µA; V GS = 0 V; Tj= -55 °C 18 - - V breakdown voltage ID = 250 µA; VGS = 0 V; Tj= 25 °C 20 - - V VGS(th) gate-source threshold ID= 1 mA; V DS = V GS; Tj= -55 °C; - - 1.2 V voltage see Figure 7; see Figure 8 I = 1 mA; V = V ; T =
in „FET Empfehlung“ · Mikrocontroller und Digitale Elektronik ·
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1811070920_CET-Chino-Excel-Tech-CEG8205A_C154283.pdf
Drain-Source Breakdown Voltage BV V = 0V, I = 250µA 20 V DSS GS D Zero Gate Voltage Drain Current IDSS VDS = 18V, VGS = 0V 1 µA Gate Body Leakage Current, Forward GSSF VGS = 12V, VDS = 0V 100 nA Gate Body Leakage Current, Reverse GSSR V = -12V, V = 0V -100 nA GS DS On Characteristicsc Gate Threshold Voltage V
in „Verbraucher mit Attiny45 über Mosfet zuschalten“ · Mikrocontroller und Digitale Elektronik ·
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93LC66.pdf
(0.127mm) per side. JEDEC Equivalent: MO-153 Drawing No. C04-086 2003 Microchip Technology Inc. DS21795A-page 17 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C NOTES: DS21795A-page 18 2003 Microchip Technology Inc. 93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C ON-LINE SUPPORT SYSTEMS INFORMATION AND Microchip provides
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IRFP_3703.pdf
D ––– 2.8 3.9 V GS= 7.0V, D = 76A V Gate Threshold Voltage 2.0 ––– 4.0 V V = V , I = 250µA GS(th) DS GS D ––– ––– 20 µA V DS= 24V, VGS= 0V DSS Drain-to-Source Leakage Current ––– ––– 250 V DS= 24V, VGS= 0V, TJ= 150°C IGSS Gate-to-Source Forward Leakage ––– ––– 200 V GS= 20V Gate-to-Source Reverse Leakage
in „[Projekt] Einstellbares Netzteil 12V/60A auf 0,5-2,5V/250A“ · Analoge Elektronik und Schaltungstechnik ·
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BS108_GS.pdf
DSS 240 250 – V atDI = 100 A, GS= 0 Gate-Body Leakage Current IGSS – – 10 nA at V = 15 V, V = 0 GS DS Drain Cutoff Current at DS = 130 V,GS = 0 IDSS – – 1 A at DS = 70 V,GS = 0.2 V IDSX – – 25 A Gate-Source Threshold Voltage VGS(th) 0.8 1.5 2.5 V at GS = VDS DI = 1 mA Drain-Source ON Resistance R – 5.5 8 DS(ON) at GS = 2.8 VD I = 100 mA 1) Thermal Resistance Junction to Ambient Air RthJA – – 150 K/W Capacitance at DS = 20 V,GS = 0, f = 1 MHz Input Capacitance C iSS – 80 – pF Output Capacitance C – 20 –
in „Wär ganz toll wenn sich einer von euch mal meinen Schaltplan ansehen würde“ · Mikrocontroller und Digitale Elektronik ·
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PDF
bts780gp_Quadswitch_Driver.pdf
I Zener limit voltage V GHZ 5.4 6.1 – V IGH = 1.6 mA Low-Side-Switches 1, 2 Static drain-source R DS ON L – 15 20 m ISL = 2 A on-resistance V = 5 V GL T j= 25 °C Static drain-source R – – 35 m I = 2 A DS ON L SH on-resistance Leakage current I – < 1 100 A V = 0 V LKL GL V DS= 18 V Body-diodeforward-voltage
in „moderne H-Bridge gesucht“ · Mikrocontroller und Digitale Elektronik ·
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EA8252.pdf
and SOP-8 (with EP) packages and has a good cooling effect and easy to use. Features Built-in Low DS(ON)ower-MOSFETS Efficiency Up to 95% Light Load Efficiency Up to 81% 4.5V to 18V Input Voltage Range Output Adjustable Down to 0.765V 2A Continuous Load Current Fixed 600KHz Switching Frequency
in „Kurioser DC-DC Step Down Converter“ · Analoge Elektronik und Schaltungstechnik ·
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MRF89XAM8A.pdf
module interfaces to Microchip’s PIC16, PIC18, PIC24, dsPIC33 and PIC32 microcontrollers with a minimum of external components through digital only connections. An example application schematic is illustratedin Figure 2-1. 2.1 Module Schematic The
in „Was darf man von einer PCB-Antenne erwarten?“ · HF, Funk und Felder ·
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PDF
mtouch_ug.pdf
Application Maestro, CodeGuard, devices in life support and/or safety applications is entirely at dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, the buyer’s risk, and the buyer agrees to defend, indemnify and ECONOMONITOR, FanSense, In-Circuit Serial hold harmless Microchip from any and all damages
in „Näherungsschalter durch 1mm Aluminium“ · Analoge Elektronik und Schaltungstechnik ·
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tpc8123.pdf
may cause decrease in maximum rating of drain-source voltage. 3 2009-07-27 TPC8123 I – V I – V −10 D DS D DS −10 −40 Common source −3 −2.5 −2.4 −2.3 −4.5 −3.4 −3 −2.8 Ta = 25°C Common source Pulse test Ta = 25°C −6 ) −8 −2.6 Pulse test ) −32 −2.6 ( ( −10 −3.6 D −4.5 −2.2 D −2.5 I −6 I −24 t t e e −2.4
in „Autobatterie Ladegerät Transistor defekt - Äquivalentes Bauteil“ · Analoge Elektronik und Schaltungstechnik ·
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datenblatt_von_FT232BL.pdf
data at a rate of up to 5M Baud – in this case the maximum rate is limited to 3M Baud by the FT232BL. DS232BL Version 1.8 © Future Technology Devices Intl. Ltd. 2005 Page 18 of 25 FT232BL USB UART ( USB - Serial) I.C. Figure 11 USB <=> RS485 Converter Configuration FT 232BBM DB9-M 15 PWREN# VCC 8 SP481 10
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A200_FT232BL.pdf
data at a rate of up to 5M Baud – in this case the maximum rate is limited to 3M Baud by the FT232BL. DS232BL Version 1.8 © Future Technology Devices Intl. Ltd. 2005 Page 18 of 25 FT232BL USB UART ( USB - Serial) I.C. Figure 11 USB <=> RS485 Converter Configuration FT 232BBM DB9-M 15 PWREN# VCC 8 SP481 10
in „Schaltplan für FT 232BL überprüfen“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ds1620.c
#include "ds1620.h" #include <util/delay.h> unsigned char ds1620_init (void) { /*set all pins as output*/ DDR_DS1620 = (1<<DQ_DS1620) | (1<<CLK_DS1620) | (1<<RES_DS1620); PORT_DS1620 = (0<<DQ_DS1620) | (1<<CLK_DS1620) | (0<<RES_DS1620); _delay_ms(10); ds1620_write_TL(0x18); //MIN 24°C _delay_ms(10); ds1620_write_TH(0x1A); //MAX 26°C //ds1620_write_TH(0x1F); //MAX 30°C //ds1620_write_TH(0x1F); //MAX 30°C _delay_ms(10); /*setze
in „DS1620 - Auslesen der Temperatur?“ · Mikrocontroller und Digitale Elektronik ·
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enc28j60.pdf
Pointer Receive Buffer Data (ERDPTH:ERDPTL) 55h (RBM 55h) Receive Buffer End 1FFFh (ERXNDH:ERXNDL) DS39662A-page 18 Advance Information 2004 Microchip Technology Inc. ENC28J60 To write to a PHY register: 3.3 PHY Registers The PHY registers provide configuration and control of 1. Write the address of
in „ENC28J60 Resetpin“ · Mikrocontroller und Digitale Elektronik ·
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40001722A.pdf
det DS40001722A-page 170 Preliminary 2013 Microchip Technology Inc. PIC16(L)F1703/7 18.3 ZCD Logic Polarity 18.5 Operation During Sleep The ZCDxPOL bit of the ZCDxCON register inverts the The ZCD current
in „PIC16(L)F1703 low voltage Programmierung?“ · Mikrocontroller und Digitale Elektronik ·
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DSPIC33EP512GM710_datasheet.pdf
I G i s C R I a l A t p p r U a R - m P F R B I u n r C / A a 6 O C x i p g 1 r E - O r t 1 P o M dsPIC33EP128GM304 128 16 0 dsPIC33EP128GM604 2 dsPIC33EP256GM304 0 TQFP, 256 32 9/4 8 8 12 2 4 3 1 5 2 1 2 18 4/5 1 Yes No No 35 44 QFN dsPIC33EP256GM604 2 dsPIC33EP512GM304 0 512 48 dsPIC33EP512GM604 2
in „Probleme mit SRAM 23LCV1024“ · Mikrocontroller und Digitale Elektronik ·
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NDT455N.pdf
Drain-SourceBreakdownVoltage V = 0 V, I = 250 µA 30 V DSS GS D I ZeroGateVoltage DrainCurrent V = 24 V, V = 0 V 1 µA DSS DS GS T = 55°C 10 µA J I Gate-BodyLeakage,Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I Gate-BodyLeakage,Reverse V = -20 V, V = 0 V -100 nA GSSR GS DS ON CHARACTERISTICS (Note2) V GateThresholdVoltage V
in „Fairchild 918 455 -> Ersatz?“ · Analoge Elektronik und Schaltungstechnik ·
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MCP4821-MCP4822.pdf
Write Command. DS21953A-page 18 © 2005 Microchip Technology Inc. MCP4821/MCP4822 6.0 TYPICAL APPLICATIONS 6.3 Output Noise Considerations The MCP482X devices are general purpose DACs The voltage noise density (in µV/√
in „Digital-Analog-Umsetzer (10V -> 1mV Auflösung)“ · Mikrocontroller und Digitale Elektronik ·
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Mosfet_PHT8N06_Nkanal.pdf
area. T = 25 ˚C sp Fig.6. Typical on-state resistance, T = 25 ˚C. j D & I DM = f(V DS I DM single pulse; parameter t p R DS(ON) = f(ID); parameter V GS January 1998 4 Rev 1.100 Philips Semiconductors Product specification TrenchMOS transistor PHT8N06LT Logic level FET 20 VGS(TO) / V
in „FET Konfektionierung okay?“ · Mikrocontroller und Digitale Elektronik ·
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V2Pro_Board_User_Guide_2_2.pdf
B1 PROGRAMn 9 10 TCK GND 11 12 GND W21 OEn 13 14 INITn W17 N18 MPA0 15 16 WEn H18 R18 MPA2 17 18 MPA1 P18 2.5V 19 20 MPA3 N19 R22 MPD00 21 22 2.5V J19 MPD02 23 24 MPD01 J20 U21 MPD04 25 26 MPD03 T22 V22 MPD06 27 28 MPD05 K20 R21 MPD08 29 30 MPD07 K18 U22 MPD10 31
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DS_SX1261-2_V1.1-1307803.pdf
- Regulated power amplifier supply SX1261/2 www.semtech.com 12 of 107 Data Sheet Rev.1.1 Semtech DS.SX1261-2.W.APP December 2017 2.2 Package View P N P _ O I I N S V R R R G N 2 2 2 2 2 1 VDD_IN 1 18 SCK GND MOSI 2 17 XTA 3 16 MISO 0 GND 4 15 NRESET XTB GND 5 14 BUSY DIO3 6 13 DIO1 7 8 9 0 1 2 1 1
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J174_J175_J176_J177.pdf
Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage vs. Gate-Source Cutoff Voltage 200 –100 18 250 gfsnd g os@ VDS = –15 V ) DSS VGS = 0 V, f = 1 kHz Ω DI ) e 160 –80 S S 15 200 o c – ( s t a c – i r u a gfs O e 120 DS –60 a c p - o d 12 150 t n n o gos C e r s n r n n u o 80 –40 C T 9 100 c -
in „P-Kanal J-FET, gibt's den real?“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
serieltest1.c
#include <util/delay.h> #include "variablen.h" /* 9600 baud */ #define UART_BAUD_RATE 9600 #define DS1307 0xD0 //Adresse des DS1307 #define PCF_Write 0x70 //Adresse für PCF Porterweiterung schreiben #define PCF_Read 0x71 //Adresse für PCF Porterweiterung lesen #define MCP_Write 0xDC //Adresse MCP ADC
in „UART Schleife MC stürzt ab“ · Mikrocontroller und Digitale Elektronik ·
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TN2404K.pdf
MOSFET FEATURES PRODUCT SUMMARY • Low On-Resistance: 4 Part V R V I Q Secondary Breakdown Free: 260 V DS DS(on) GS(th) D g Number (V) () (A) (A) (Typ.) Low Power/Voltage Driven TN2404K 0.2 Low Input and Output Leakage TN2404K, 240 4 at GS = 10 V 0.8 to 2 4.87 nC 0.3 Excellent Thermal Stability BS107KL
in „MOSFET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM2576.pdf
additional L-C filter that reduces the output ripple by a factor of 10 or more is included in this circuit. DS011476-17 Note: Complete circuit not shown (see Figure 10). FIGURE 13. Undervoltage Lockout for Buck-Boost Circuit DELAYED STARTUP DS011476-18 The ON /OFF pin can be used to provide a delayed startup
in „Netzteil selbstbau“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NSC-LM2576-5.pdf
additional L-C filter that reduces the output ripple by a factor of 10 or more is included in this circuit. DS011476-17 Note: Complete circuit not shown (see Figure 10). FIGURE 13. Undervoltage Lockout for Buck-Boost Circuit DELAYED STARTUP DS011476-18 The ON /OFF pin can be used to provide a delayed startup
in „KFZ Spannung mit LM2576 Diode vor die Spule?“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
G32trust.asm
esp+24h] push 4000h ; uStyle push ecx ; lpReOpenBuff push offset aSlicense_dll_0 ; lpFileName call ds:OpenFile cmp eax, 0FFFFFFFFh jz short loc_1000168A push offset aSlicense_dll_0 ; lpLibFileName call ds:LoadLibraryA mov esi, eax cmp esi, 20h mov [esp+18h], esi jb short loc_1000168E push 2 ; lpProcName
in „Wer kann mir eine ASM File compelieren“ · Softwareentwicklung ·
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SMDB3.pdf
220 V C = 0.1 µF P 50 Hz Vo T410 R = 20 Ω DS2125 - Rev 3 page 3/11 DB3, DB4, SMDB3 Characteristics Figure 3. Rise time measurement p 90 % 10 % t r DS2125 - Rev 3 page 4/11 DB3, DB4, SMDB3 Characteristics (curves) 1.1 Characteristics curves Figure
in „Diac und Triac in einem Bauteil“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
diagramm.asm
max. Gr áe der Datei pop ds ;Datensegment restaurieren mov dx,0 ;Offsetadresse des Puffers int 21h push ds ;Datensegment retten mov dx,cs mov ds,dx mov si,offset hinweis2 mov di,beginhinweis2 mov cx,hinweis2laenge PR000: movsb
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Datei
on.c
****************/ #include <mega8.h> #include <delay.h> #include <string.h> #include <stdlib.h> // DS1302 Real Time Clock functions #asm .equ __ds1302_port=0x18 ;PORTB .equ __ds1302_io=1 .equ __ds1302_sclk=0 .equ __ds1302_rst=7 #endasm #include <ds1302.h> // Standard Input/Output functions #include <
in „SPI ATmega8L Beschleunigungssenor“ · Mikrocontroller und Digitale Elektronik ·
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24LC256_32k_I2C-EEPROM.pdf
protrusions shall not exceed .005” (0.127mm) per side. JEDEC Equivalent: MO-153 Drawing No. C04-087 DS21203M-page 18 2004 Microchip Technology Inc. 24AA256/24LC256/24FC256 8-Lead Plastic Micro Small Outline Package (MS) (MSOP) E E1 p D 2 B n 1 α A A2 c φ A1 (F) L β Units INCHES MILLIMETERS* Dimension
in „immer noch EEprom“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ds232bv16.pdf
data at a rate of up to 5M Baud – in this case the maximum rate is limited to 3M Baud by the FT232BM. DS232B Version 1.6 © Future Technology Devices Intl. Ltd. 2004 Page 18 of 25 FT232BM USB UART ( USB - Serial) I.C. Figure 11 USB <=> RS485 Converter Configuration FT232BM DB9-M 15 PWREN# VCC 8 SP481 10 3
in „kleiner FET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRF8736.pdf
250µA ∆Β VDSS/ TJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C,D= 1mA R DS(on) Static Drain-to-Source On-Resistance ––– 3.9 4.8 mΩ VGS = 10V, D = 18Ae ––– 5.5 6.8 V = 4.5V, I = 14.4A GS D V GS(th) Gate Threshold Voltage 1.35 1.8 2.35 V VDS = VGS D = 50µA ∆V GS(th) Gate Threshold
in „IRF8736 - Was haltet Ihr davon?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NECCS04393-1.pdf
disable VSS0 VSS1 Input enable Type 18-A V LC0 P-ch VLC0 V LC1 V LC1 P-ch N-ch N-ch P-ch SEG P-ch N-ch data OUT N-ch N-ch P-ch P-ch COM V LC2 data N-ch P-ch V LC2 N-ch VSS1 V SS1 Data Sheet U11776EJ2V1DS 23 µPD78P0308, 78P0308Y 3. INTERNAL
in „Anschlussbelegung uP D78P0308GF gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
thermometer0_1-1.bas
anzeigen ' ************ ENDE VOM DISPLAY CODE Loop Marke: 'Diese Sequenz dient zum Auslesen des DS1820 (vgl.Datenblatt vom DS1820) 1wreset ' 1wire Reset 1wwrite Skip_rom ' Read ROM command 1wwrite Convertt ' Measure Temperature 1wreset ' 1wire Reset 1wwrite Skip_rom ' Skip ROM command 1wwrite Read_ram
in „Thermometer mit ds18s20 und LED Annzeige“ · Projekte & Code ·
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MCP6V11U_OpAmp.pdf
MCP6V12/14 POR Trip Voltage V 0.9 — 1.5 V POR Note 1: For Design Guidance only; not tested. 2: Figure 2-18 shows how V and V changed across temperature for the first production lot. CML CMH DS20005124B-page 4 2012-2014 Microchip Technology Inc. MCP6V11/1U/2/4 TABLE 1-2: AC ELECTRICAL SPECIFICATIONS Electrical
in „OpAmps: Maximale Widerstandswerte“ · Analoge Elektronik und Schaltungstechnik ·
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STM32_DS1307.pdf
DS1307 – 24C128 – DS18B20 – Module We are only interested in RTC-chip DS1307. We do not use memory chip 24C128 and digital thermometer IC DS18B20, and we do not use any battery on the back side of the module
in „I2C STM32F103“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MRF150.pdf
Zero Gate Voltage Drain CurrDSt= 50 V,GS = 0) DSS — — 5.0 mAdc Gate–Body Leakage CurrentGSV= 20 V, DS = 0) GSS — — 1.0 Adc ON CHARACTERISTICS Gate Threshold Voltage (= 10 V, I = 100 mA) V 1.0 3.0 5.0 Vdc DS D GS(th) Drain–Source On–Voltage (V= 10 V, I = 10 A) V 1.0 3.0 5.0 Vdc GS D DS(on) Forward Transconductance (V= 10 V, I = 5.0 A) g 4.0 7.0 — mhos DS D fs DYNAMIC CHARACTERISTICS Input CapacitanceDSV= 50 V,GS = 0, f = 1.0 MHz) Ciss — 400 — pF Output CapacitanceDSV= 50 V,GS = 0, f = 1.0 MHz) Coss — 240 — pF Reverse Transfer CapacitancDS(= 50 V,GS =
in „Wärmeleitpad gesucht für POWER FET MRF150“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Datenblatt.pdf
the next line, thus limiting the number of available characters for customer-specific information. DS21483D-page 18 © 2007 Microchip Technology Inc. TC9400/9401/9402 14-Lead Ceramic Dual In-Line (JD) – .300" Body [CERDIP] Note: For the most current package drawings, please see the Microchip Packaging
in „Frequenz-Spannungswandler OP-Verstärkung“ · Mikrocontroller und Digitale Elektronik ·
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Bild
Software zur Datenübertragung eines Rigol Oszilloskops
Transfer Rigol — Rigol DS1000D / DS1000E Series Detected USB Devices: 0001 Refresh Close Show Help Install Driver (64 bit) Rigol Only Reset Clear Auto Run Stop Single Force Trigger Serie: Rigol DS1000D / DS1000E Series Brand:
in „Neue Open Source Software macht aus deinem Oszilloskop einen Logik Analysator“ · PC Hard- und Software · · Screenshots
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Datei
Webseite_mit_25_Zeilen.txt
Temperatur, Licht) ablesen</h2><br/> <h2>Temperatur Sensor(Digital):</h2><br/> Temperatur Sensor Außen: ~ds18b20TempOut~ *C<br/> Temperatur Sensor Innen: ~ds18b20TempIn~ *C<br/> Temperatur Sensor Wohnzimmer: ~ds18b20TempLiving~ *C<br/> <h2>Licht Sensor</h2><br/> Licht Sensor Außen: nA lux<br/> Licht Sensor
in „ATMega644 hängt sich auf und resettet sich selbst, nach lesen einer SD Karte und ENC28J60“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BMA423.pdf
19[1 ] step_cou 0x5E: nter.setti 0x0C param_19 0x28 ngs_19[0 ] step_cou 0x5E: nter.setti 0x00 param_18 0x27 ngs_18[1 ] step_cou 0x5E: nter.setti 0x01 param_18 0x26 ngs_18[0 ] step_cou 0x5E: nter.setti 0x00 param_17 0x25 ngs_17[1 ] step_cou 0x5E: nter.setti 0xA0 param_17 0x24 ngs_17[0 ] step_cou 0x5E:
in „LilyGo T-Watch 2020 v1 Micropython“ · Mikrocontroller und Digitale Elektronik ·
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Datei
on.c
****************/ #include <mega8.h> #include <delay.h> #include <string.h> #include <stdlib.h> // DS1302 Real Time Clock functions #asm .equ __ds1302_port=0x18 ;PORTB .equ __ds1302_io=1 .equ __ds1302_sclk=0 .equ __ds1302_rst=7 #endasm #include <ds1302.h> // Standard Input/Output functions #include <
in „SPI ATmega8L Beschleunigungssenor“ · Mikrocontroller und Digitale Elektronik ·
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Datei
on.c
****************/ #include <mega8.h> #include <delay.h> #include <string.h> #include <stdlib.h> // DS1302 Real Time Clock functions #asm .equ __ds1302_port=0x18 ;PORTB .equ __ds1302_io=1 .equ __ds1302_sclk=0 .equ __ds1302_rst=7 #endasm #include <ds1302.h> // Standard Input/Output functions #include <
in „SPI ATmega8L Beschleunigungssenor“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BTS780.pdf
I Zener limit voltage V GHZ 5.4 6.1 – V IGH = 1.6 mA Low-Side-Switches 1, 2 Static drain-source R DS ON L – 15 20 m ISL = 2 A on-resistance V = 5 V GL T j= 25 °C Static drain-source R – – 35 m I = 2 A DS ON L SH on-resistance Leakage current I – < 1 100 A V = 0 V LKL GL V DS= 18 V Body-diodeforward-voltage
in „BTS780GP Motortreiber“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRFI4212H-117.pdf
Gate-to-Source Reverse Leakage ––– ––– -200 V GS= -20V g fs Forward Transconductance 11 ––– ––– S V DS= 50V, D = 6.6A Qg Total Gate Charge ––– 12 18 Q gs1 Pre-Vth Gate-to-Source Charge ––– 1.6 ––– V DS= 80V Q gs2 Post-Vth Gate-to-Source Charge ––– 0.71 ––– nC V = 10V GS Q gd Gate-to-Drain Charge ––– 6.2
in „UV-Laserdrucker II“ · Platinen ·
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PDF
STB10NK60Z.pdf
= 0) VDS = Max Rating, µA GS 50 I Gate Body Leakage Current V = ±15V, V = 0 ±10 µA GSS (VDS= 0) GS DS V Gate Threshold Voltage V = V , I = 250 µA 3 3.75 4.5 V GS(th) DS GS D Static Drain-Source On RDS(on) VGS = 10 V,DI = 20 A 0.65 0.75 Ω Resistance Table 6. Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit gfsNote 4 Forward Transconductance V DS=15V, D = 4.5A 7.8 S Ciss Input Capacitance 1370 pF C oss Output Capacitance V DS=25V, f=1 MHz, GS =0 156 pF Reverse Transfer Capacitance 37 pF C rss Coss eq. Note 5 Equivalent Ouput Capacitance GS=0,
in „Ersatz für STB10NK60Z“ · Mikrocontroller und Digitale Elektronik ·
