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e2928_a8v-vm_se.pdf
102709-0001 PSC DS A2S56D3OATP • • 512MB Transcend DDR400-512 Mosel DS V58C2256804SAT5B • • 512MB Transcend DDR400-512 Samsung DS K4H560838F-TCCC • • 256MB Transcend 111448-0214 2.5 PSC SS A2S56D30BTP • • 512MB Transcend
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Datei
ATmega8515.asm
wr0, dz ; Startdrehzahl siehe oben Definitionen out OCR0, wr0 ; IRQ bei k = 1/2 * fpwm ; Fclk/8 -> DS S.91 T48, Phase Correctly PWM - ein DS. S.90 T44 ; OC0 pin 14 - HIGH = Match->Top->Match -DS. S91 T47 ldi wr0, 0x62 ; 62h = 01100010 out TCCR0, wr0 ldi wr0, 1<<TOIE0^0<<OCIE0 ;Interrupt Overflow/ Compare
in „mC arbeitet nicht“ · Mikrocontroller und Digitale Elektronik ·
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ATmega1284P_128KByte.pdf
B10 PC2 B15 PA5 B20 PB3 A6 PD2 A12 PC3 A18 PA4 A24 PB4 2020 Microchip Technology Inc. Data Sheet Complete DS40002070B-page 12 ATmega164A/PA/324A/PA/644A/PA/1284/P 1.3 Pinout - VFBGA for ATmega164A/164PA/324A/324PA Figure
in „ATmega1284P versus ohne P“ · Mikrocontroller und Digitale Elektronik ·
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HausAutoTest.pdf
7 DAT0 11 R 1 8 GND U16 9 E 2 C DAT1 QH 9 C 5V GND PD30 B SOT-23 SD_Card 9 74HC595 10k 1 BC856 D R20 Q1 P C 3 0 GND 1 P9 1 0 R19 2 N 10k 5V N R13 C DS1631 5V 10k C36 TWCK_SCL 1 8 100nF SDA VDD DS3234S# 25AA512 GND TWD_SDA 2 SCL A_0 7 CS_RTC 1 20 SCK0 CS_EEProm 1 8 P6 0 3 6 100nF1 0 1 CS SCLK CS Vcc
in „AT32UC3C2 Schaltplan“ · Mikrocontroller und Digitale Elektronik ·
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Si2302.pdf
Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET ▯▯▯D▯C▯ ▯▯▯▯▯▯▯ V (V) r (▯) I (A) DS DS(on) D 0.085 @ VGS = 4.5 V 2.8 20 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302DS (A2)* *Marking
in „Highside-Switch gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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70628.pdf
Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET ▯▯▯D▯C▯ ▯▯▯▯▯▯▯ V (V) r (▯) I (A) DS DS(on) D 0.085 @ VGS = 4.5 V 2.8 20 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302DS (A2)* *Marking
in „MOSFET CJ2302 geht kaputt?“ · Analoge Elektronik und Schaltungstechnik ·
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sqjq160e.pdf
please see 8m S S 2 www.vishay.com/doc?99912 m 3 S m S G 79m 4 1 D Top View Bottom View PRODUCT SUMMARY V (V) 60 G DS RDS(on)) atGS = 10 V 0.00085 D (A) 602 N-Channel MOSFET Configuration Single S ORDERING INFORMATION
in „Hilfe mit MOSFET Datenblatt“ · Analoge Elektronik und Schaltungstechnik ·
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25AA128.pdf
, dsPICworks, dsSPEAK, ECAN, devices in life support and/or safety applications is entirely at ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial the buyer’s risk, and the buyer agrees to defend, indemnify
in „SPI EEPROM -> Kein Page read :- O“ · Mikrocontroller und Digitale Elektronik ·
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PDF
opb_emc.pdf
Mem_OEN Mem_DQ[0:15] D0 D1 D0 D1 Legend: DS421_10_011306 WR = Write RD = Read Figure 10: OPB EMC Single Write/Single Read to 16-bit Asynchronous SRAM 18 www.xilinx.com DS421 January 16, 2006 Product Specification OPB External Memory Controller
in „ext. Flash-ROM in C beschreiben“ · Mikrocontroller und Digitale Elektronik ·
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HausAutoTest.pdf
ON/OFF 1 R 0 S R GNDA C11 U2 100uF D Q C31 S C33 D9 R18 0 330uF 1 V 0 5 U11 LED JP2 2 R 100nF E D,4V Kerko 1 1uF Kerko 2 1 R 1 5 R L 20mA R19 1 2 7 2 D7 LED JUMPER 2 1 R R20 GND U17 0 D8 1ULN2803 LED 14 SER QA 15 1
in „AT32UC3C2 Schaltplan“ · Mikrocontroller und Digitale Elektronik ·
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HausAutoTest.pdf
ON/OFF 1 R 0 S R GNDA C11 U2 100uF D Q C31 S C33 D9 R18 0 330uF 1 V 0 5 U11 LED JP2 2 R 100nF E D,4V Kerko 1 1uF Kerko 2 1 R 1 5 R L 20mA R19 1 2 7 2 D7 LED JUMPER 2 1 R R20 GND U17 0 D8 1ULN2803 LED 14 SER QA 15 1
in „AT32UC3C2 Schaltplan“ · Mikrocontroller und Digitale Elektronik ·
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Allegro_Stromsensor_0755-050.pdf
TÜV America Certificate Number: ACS755SCB-050-PFF Formed Formed ACS755SCB-050-PSF Formed Straight –20 to 85°C U8V 04 11 54214 001 ACS755SCB-050-PSS Straight Straight 115NortheastCutoff,Box15036 ACS755050-DS, Rev. 2 Worcester,Massachusetts01615-0036 (508)853-5000 Current Sensor: ACS755xCB-050 Functional
in „Strommessung an 230V AC“ · Mikrocontroller und Digitale Elektronik ·
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MCP9501-2-3-4.pdf
a-2.0 e e L Open-Drain Output p 0.02 (MCP9501/03 only) m-4.0 VDD = 4.1V T 32 units -6.0 0.00 -40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120 T (°C) T (°C) A A FIGURE 2-1: Temperature Accuracy. FIGURE 2-4: Leakage vs. Temperature. 20% 100% ) 4.0 14.0 ° Y ( 3.5 13.0 S 15% 95% V s T D VOH DD
in „Thermal Shutdown“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
OneWire.asm
******************************** ;----------------- ; RESET ;----------------- One_Wire_Reset: sbi DS_DDR,DQ ;1-Wire für 470 µS auf Low ziehen timer,470 ;470µs delay cbi DS_DDR,DQ ;OneWireHigh timer,60 ;60µs delay sbis DS_Pin,DQ ;Warten bis der 18B20 die Datenleitung freigibt rjmp pc-1 ; ret ;-------
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REN_r01ds0145ej0102_v850e2fe4l_DST_20140421.pdf
D a a S e e t V850E2/FE4-L 32 Hardware µPD70F3570-L µPD70F3571 µPD70F3572 R01DS0145EJ0102, Rev. 1.02 www.renesas.com April 21, 2014 Notice 1. All information included in this document is current as of the date
in „Renesas V850 (3572 (A2) FE4-L) auslesen / programmieren?“ · Mikrocontroller und Digitale Elektronik ·
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SFS0405T4.pdf
- V Drain-Source Leaka ge Current IDSS VDS40V, V =GS - -- 1 uA Gate-Source Leakage Current IGSS VGS20V, V =DS - -- 100 nA Gate-Source Leakage Current IGSS V GS20V, V =0DS - -- -100 On Characteristics Gate Threshold Voltage VGS(th) VGS V ,DS =D50µA 1.0 1.5 2.0 V Static Drain- Source On State VGS10V, I
in „Bezugsquelle oder Alternative gesucht.“ · Mikrocontroller und Digitale Elektronik ·
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2013821185244121.pdf
Plastic-Encapsulate Mosfets Dual N-Channel Enhancement Mode MOSFET FEATURES 8205A 5A,20V.r DS(on)0.025 @ VGS= 4.5 V rDS(on) 0.040 @ VGS = 2.5 V. TSSOP-8 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) P aram eter S ym bol R ating U nit D rain-S ource V oltage VD S 20 V G ate-S
in „Laderegler Li-Ion 3s“ · Analoge Elektronik und Schaltungstechnik ·
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upd65.pdf
Data Sheet U14380EJ2V0DS00 2 PD64A, 65 BLOCK DIAGRAM CARRIER 4 PORT K I 4 KI-K I3 REM GENERATOR CPU ROM CORE 8 PORT K I/O 8 KI/O-KI/O7 9-bit S1/LED TIMER 3 PORT S 3 S0, S/LED, S 2 RAM SYSTEM XIN CONTROL XOUT VDD GND LIST OF
in „Gesucht ... UPD65013 ...“ · Mikrocontroller und Digitale Elektronik ·
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DS3231.pdf
Maxim Integrated logo are trademarks of Maxim Integrated Produ 2015 Maxim Integrated Products, Inc 20 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Maxim Integrated: DS3231S#DS3231S#T&RDS3231SN#DS3231SN#T&RDS3231SDS3231SNDS3231S/T&RDS3231SN/T&R DS3231S#-W
in „DS3231 vs PCF8573, hilfe gesucht !“ · Mikrocontroller und Digitale Elektronik ·
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Si4838DY.pdf
20 100 % R Tegted D SO-8 S 1 8 D S 2 7 D S 3 6 D G G 4 5 D Top View S Ordering Information: Si4838DY-T1-E3 (Lead (Pb)-free) Si4838DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V DS 12 Gate-Source Voltage V ± 8 V GS TA= 25 °C 25 17 Continuous Drain Current JT = 150 °C) ID TA= 70 °C 20 13 A Pulsed Drain Current (10 µs Pulse Width) DM 60
in „Verpolungsschutz Mosfet dimensionieren“ · Analoge Elektronik und Schaltungstechnik ·
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ElektronikBauteile.pdf
ULN 2003 AD SMD 0,20 € 0,80 € 47 10 IC-Sockel, 16-polig, superflach, gedreht, vergold. GS 16P 0,18 € 1,80 € 48 5 Spindeltrimmer, waschbar, 19mm, 100 K-Ohm 962-20 100K 0,44 € 2,20 € 49 2 Spannungsregler, TO-3 LM 317 TO 3
in „[V] - Elektroniksammlung“ · Markt ·
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PDF
irfh4210pbf.pdf
Characteristics 1000 1.8 c ID= 50A a A i 1.6 VGS = 10V t e e R r 100 n 1.4 C O ) e c e r TJ= 150°C u l o S 1.2 - o r - T = 25°C n N i 10 J a 1.0 r D , ) ID o V = 15V S 0.8 DS D 60µs PULSE WIDTH R 1.0 0.6 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V
in „Akkubohrschrauber 10,8V von Makita und Metabo“ · Mechanik, Gehäuse, Werkzeug ·
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Datei
OneWire.asm
accu - ;- Anzahl Bits - Index - ;------------------------------------------------ One_Wire_Reset: sbi DS_DDR,DQ ;1-Wire für 470 µS auf Low ziehen timer,470 ;470µs delay cbi DS_DDR,DQ ;OneWireHigh timer,60 ;60µs delay sbis DS_Pin,DQ ;Warten bis der 18B20 die Datenleitung freigibt rjmp pc-1 ; ret One_Wire_Write
in „Probleme mit "MatchRom" bei DS18B20“ · Mikrocontroller und Digitale Elektronik ·
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Datei
bootloaderV1.a51
else XCALL macro dest LCALL dest endm XJMP macro dest LJMP dest endm endif $list dseg at 8 wValueLo: ds 1 reqLen: ds 1 ;wlengthLow pCall: ds 3 ;Call address for exec a program bRequest: ds 1 pDesc: ds 3 scramble: ds 4 ;Scramble Key Addr: ds 2 rLen: ds 1 RAM_18: ds 3 ;used as overlay RAM_1B: ds 3 ; RAM_
in „uC für 0,20€ CH552 / CH554 von WCH Billig Micro mit USB Funktion, Chip vorstellung“ · Mikrocontroller und Digitale Elektronik ·
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IRF7822.pdf
15A =15A e VDS = 24V n t 5 i 1.5 e R ) n d e e z a 4 r a o o m1.0 e S o u t ( S 2 n t r t D 0.5 G ,) S 1 o V S D V =4.5V R 0.0 GS -60 -40 -20 0 20 40 60 80 100 120 140 160 00 10 20 30 40 50 ° T J Junction Temperature ( C) QG, Total Gate Charge (nC) Fig 1. Normalized On-Resistance
in „Falsches Ladegerät am Notebook :-(“ · Mikrocontroller und Digitale Elektronik ·
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at91rm9200-ek.pdf
10µF 10 uF TWD 6 13 10V SDA RH/VH 6 3 6 1 1 1 1 1 TWCK 5 12 5 5 1 7 1 1 1 1 1 SCL RW/VW PC[0..15] A20 FDAT23 A19 6 AB20 E E S E S S D D D FDAT23 107 FDAT22 10 A0 RL/VL 14 7 AB19 S T E V V V V V V FDAT22 106 4 A2 A18 8 AB18 T E T E A A A A A FDAT21 105 FDAT21 11 A3 A17 9 AB17 D T S FDAT20 104 FDAT20 WP
in „SD-RAM aus PC für AT91RM9200 (ARM9)“ · Mikrocontroller und Digitale Elektronik ·
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Anleitung.pdf
L1 10uH 1 15 1N5819 Diode SS14 D1 SMD 1 16 0805 SMD LED D2,D3 Red 2 17 0.8in 4Bit Red Digital Tube DS1 Common Anode 1 18 Vibrating Motor M1 1 19 SMD Button S1-S4 6*6*9mm 4 20 Active Buzzer B1 5V 1 21 CR1220 Battery Socket BT1 1 22 CR1220 Battery BT1 3V 1 23 GL5516 Photoresistor R17 1 24 Thermistor R18
in „Hilfe bei Fehlersuche“ · Platinen ·
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Infineon-IPP_B_I80N04S4_04-DS-v01_00-en-1518478.pdf
DS(on) D j parameter: V GS parameter: V GS 300 6.5 V 15 5.5 V 6 V 240 13 7V 11 180 ] Ω ] [ 9 [ 10 V n ID 6.5 V S D 120 R 7 7 V 6 V 5 60 10 V 5.5 V 3 5 V 0 1 0 1 2 3 4 0 20 40 60 80 100 120 140 V DS[V] ID
in „Hilfe bei Halbbrückenschaltung benötigt“ · Analoge Elektronik und Schaltungstechnik ·
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CS20N60.pdf
Conditions Units Min. Typ. Max. gfs Forward Transconductance V DS5V, ID=10A -- 18 -- S C iss Input Capacitance -- 4900 -- C Output Capacitance V GS= 0V VDS= 25V -- 360 -- pF oss f = 1.0MHz C rss Reverse Transfer Capacitance -- 38 -- Resistive Switching Characteristics
in „Suche nach Bauteil“ · Offtopic ·
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1-BTS7810K_11-03-2003.pdf
circuit. To achieve low RDS ON and fast switching performance, the low-side switches are manufactured in S-FET 2 logic level technology. The equivalent standard product is the SPD30N06S2L-13. Data Sheet 1 2003-03-11 BTS 7810 K 1.3 Pin Configuration (top view) Molding Compound NC 1 Heat-Slug 1 SL1 2 18 DL1
in „Kuehlkoerper“ · Mikrocontroller und Digitale Elektronik ·
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BTS7810K_11-03-2003.pdf
circuit. To achieve low RDS ON and fast switching performance, the low-side switches are manufactured in S-FET 2 logic level technology. The equivalent standard product is the SPD30N06S2L-13. Data Sheet 1 2003-03-11 BTS 7810 K 1.3 Pin Configuration (top view) Molding Compound NC 1 Heat-Slug 1 SL1 2 18 DL1
in „Ansteuerung eines Magnetventils --> Frage zu Datenblatt“ · Analoge Elektronik und Schaltungstechnik ·
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NDM3000.pdf
Figure 16. P-Channel Capacitance Characteristics. Characteristics. 10 10 V = 10V V = -10V ID = 3A DS 20V ) ID = -3A DS ) ( -20V ( 8 E 8 E G A T L 15V L -15V O 6 V 6 V E C C R R O 4 O - - 4 E E A A , G S 2 , 2 G G V - 0 0 2 4 6 8 10 12 00 2 4 6 8 10 12 Q g , GATE CHARGE (nC) Q g , GATE CHARGE (nC) Figure 17. N-Channel Gate Charge Characteristics. Figure 18. P-Channel Gate Charge Characteristics. NDM3000 Rev. E Typical Electrical Characteristics 10 6 V =10V T J -55°C VDS = -10V ) DS S TJ = -55°C N 8 N5 E 25°C M 25°C I I ( (4 E 6 125°C C N N 125°C T T3 C
in „L298 Nachfolger???“ · Mikrocontroller und Digitale Elektronik ·
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RF_PICKIT.pdf
3.8 Third Party Component Suppliers................................................................. 18 © 2003 Microchip Technology Inc. Preliminary DS70093A-page iii rfPIC™ Development Kit 1 User’s Guide Chapter 4. rfPIC12F675 Transmitter Module 4.1 Introduction .......................................
in „[V] Verkaufe RF PIC KIT Transmitter & Receiver Module“ · Markt ·
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BMA423.pdf
...................................................................................................18 4.4. S ENSOR D ATA ....................................................................................................................20 Acceleration Data............................................
in „LilyGo T-Watch 2020 v1 Micropython“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Nano.txt
put in temp all the 8 bits of LSB (least significant byte) tr = data[0]; if (address[0] == 0x10) // DS18S20 { //check for negative temperature if (data[1] > 0x80) { tr = !tr + 1; //two s complement adjustment tr = tr * -1; //flip value negative. } //drop bit 0 tr = tr >> 1; //COUNT PER Celsius degree
in „C# Temp werte als label anzeigen“ · Softwareentwicklung ·
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AO3404A.pdf
GS=10V, ID=5.8A 18.4 25 m R DS(ON) Static Drain-Source On-Resistance T J125°C 26.2 36 V =4.5V, I =4.8A 24.5 35 m GS D gFS Forward Transconductance V DSV, I =D.8A 22 S V SD Diode Forward Voltage IS=1A, V GSV 0.75 1 V IS
in „unbekante SMD code (Fujitsu Esprimo X913T Motherboard D3204)“ · Analoge Elektronik und Schaltungstechnik ·
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data.pdf
is possible. See Appl. Notes. 2 www.irf.com IPS0151/IPS0151S Static Electrical Characteristics (Tj= 25 C unless otherwise specified.) Symbol Parameter Min. Typ. Max. Units Test Conditions o Rds(on) ON state resistance j = 25 C 10 20 25 m V in= 5V, ds= 1A Tj= 150
in „Problem mit MOSFET-Schalter“ · Analoge Elektronik und Schaltungstechnik ·
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93C86.pdf
High-impedance 0 D N ... D 0 DN ... D 0 FIGURE 3-3: EWEN EWEN TCSL CS CLK DI ... 1 0 0 1 1 x x ORG = VCC, 8 X’S ORG = VSS, 9 X’S 1996-2012 Microchip Technology Inc. DS21132F-page 7 93C76/86 FIGURE 3-4: EWDS TCSL CS CLK DI 1 0 0 0 0 x ... x ORG = VCC, 8 X’s ORG = VSS, 9 X’S FIGURE 3-5: WRITE CS Standby CLK DI
in „asm Code für EEPROM 93C86“ · Mikrocontroller und Digitale Elektronik ·
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RealSimGear_AVR256.pdf
:0010ad 20 93 ac 0b sts DAT_mem_0bac,R18 = ?? LAB_code_0010af XREF[1]: code:0010a6(j) code:0010af 20 91 18 02 lds R18,DAT_mem_0218 = ?? code:0010b1 30 91 19 02 lds R19,DAT_mem_0219 = ?? code:0010b3 21 15 cp R18
in „ATmega2560 hex File disassemblieren“ · Mikrocontroller und Digitale Elektronik ·
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Infineon-IRLIB9343-DS-v01_02-EN.pdf
Current µA ––– ––– -25 VDS = -55V,VGS = 0V,TJ=125°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V IGSS Gate-to-Source Reverse Leakage ––– ––– 100 nA V = 20V GS gfs Forward Trans conductance 5.3 ––– ––– S VDS = -25V, D = -14A Q Total Gate Charge ––– 31 47 V = -44V g DS Q gs Pre-Vth Gate-to-Source
in „DS3231 RTC Modul, Raspberry Pi, Zeitschaltung“ · Mikrocontroller und Digitale Elektronik ·
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AN-9010.PDF
gate−oxide capacitance per unit area; Figure 11. Equivalent Circuit, Parasitic Capacitance W d(epi.)s the width of the depletion region in the epitaxial layer(= N− drift region); and CGS Capacitance between Gate and Source 2k s oV DS) f )B W d(epi.) Ǹ C gs+ C O C ) N P q CB C Os the capacitance between
in „SMD Mosfet mit Z-Diode für induktive Last“ · Analoge Elektronik und Schaltungstechnik ·
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CPH3308.pdf
V n e n e D V S= -- 0. r e 60 r e ID = -2A , G D t D t 50 t S- 40 t S- t n t n S O 20 S O 00 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-SourceVoltage,V GS -- V
in „2x SMD Marking gesucht“ · Mikrocontroller und Digitale Elektronik ·
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datenblatt_von_FT232BL.pdf
part of the USB descriptor. 4.0 Device Pin-Out 0 3 6 3 V A V V C V C C C 6 V C C I 25 3V3OUT C O TXD S T C D U 24 C S C N O I C D RXD E T A A X X V T 8 USBDM RTS# 23 CTS# 22 7 21 USBDP DTR# 32 25 20 DSR# 5 19 EESK 1 24 RXD RSTOUT# DCD# 4 18 EEDATA RTS# RESET# RI# VCC FTDI CTS# 27 RESET# DTR# XTIN TXDEN
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A200_FT232BL.pdf
part of the USB descriptor. 4.0 Device Pin-Out 0 3 6 3 V A V V C V C C C 6 V C C I 25 3V3OUT C O TXD S T C D U 24 C S C N O I C D RXD E T A A X X V T 8 USBDM RTS# 23 CTS# 22 7 21 USBDP DTR# 32 25 20 DSR# 5 19 EESK 1 24 RXD RSTOUT# DCD# 4 18 EEDATA RTS# RESET# RI# VCC FTDI CTS# 27 RESET# DTR# XTIN TXDEN
in „Schaltplan für FT 232BL überprüfen“ · Mikrocontroller und Digitale Elektronik ·
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Datei
thermometer01mini-maxi.bas
******************************************* 'Orginalsoftware von Paul Baumann ' ' "Thermometer mit ds18s20 und LED Annzeige - www.mikrocontroller.net" ' 'THERMOMETER MIT 4-stelliger LED Anzeige und DS1820 by LEXATRONIC 'Anzeigen mit gemeinsamer Anode an PortB0 bis PortB6 (Segment A an PB0 usw.) 'Digitansteuerung
in „Thermometer mit ds18s20 und LED Annzeige“ · Projekte & Code ·
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PDF
BS108_GS.pdf
runaway ♦ No secondary breakdown max∅.022 (0.55) ♦ Specially suited for telephone subsets .098 (2.5) D S MECHANICAL DATA G Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) On special request, this transistor is also manu- factured in the pin configuration TO-18.
in „Wär ganz toll wenn sich einer von euch mal meinen Schaltplan ansehen würde“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ZXM61N02F.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal
in „74LS109 Toggelt nicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
nFET_ZXM61N02FTA.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal
in „ESP8266 Module mit Batterie betreiben - Strom sparen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
nFET_ZXM61N02FTA.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal
in „Wellenlänge Infrarot Leuchtdiode?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
nFET_ZXM61N02FTA.pdf
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal
in „3.3V MOSFET ersetzen“ · Analoge Elektronik und Schaltungstechnik ·