Characteristics Symbol Parameter Test conditions Min. Typ Max. Unit R * Reverse leakage current T j 25°C V R V RRM 8 µA Tj= 150°C 25 240 VF** Forward voltage drop Tj= 25°C IF= 8A 1.8 V Tj= 150°C 1.05 1.35 Tj= 25°C IF= 16A 2.08 Tj= 150°C 1.28 1.64 Pulse test: * tp = 5δm< 2% ** tp = 38δ < 2% 2 To evaluate
Zet R SOT23R MPSA43 5E BC808-16 Phi N SOT23 BC328-16 5ER BC808-16R Phi R SOT23R BC328-16 5F BC808-25 Phi N SOT23 BC328-25 5Fs BC808-25 Sie N SOT23 BC328-25 5Fs BC808-25W Sie N SOT323 BC328-25 5F MMBD501 Mot C SOT23 MBD501 hot carrier diode 5F Gali-5F MC AZ SOT89 DC-4GHz MMIC amp 20 dB gain 5FR BC808
AUGUST 13 Mittwoch Mo 4 11 18 25 Di 5 12 19 26 Mi 6 13 20 27 Do 7 14 21 28 Fr 1 8 15 22 29 Sa 2 9 16 23 30 So 3 10 17 24 31 PERSCHEID JÜRGENS ERSTER TAG BEIM MINEN-RÄUMDIENST FING GANZ BESCHISSEN AN.
integral reverse SM (Body Diode c p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ= 25°C, S = 66A, GS = 0V e rr Reverse Recovery Time ––– 28 42 ns T = 25°C, I = 66A, DD = 25V J F Qrr Reverse Recovery Charge ––– 25 38 nC di/dt = 100A/µe t on Forward Turn-On Time Intrinsic turn-on time is
photovoltaic detectors P13243 series Spectraltransmittancecharacteristicsofwindowmaterials Linearity (Typ. Ta=25 °C) (Typ. Ta=25 °C, λ=1.55 μm) 100 10 μA 1 μA 80 ) ( t 100 nA e 60 n c Sapphire r a u 10 nA i Si with AR coating t m o n 40 P r 1 nA T 20 100 pA 0 10 pA 2 3 4 5 6 7 8 10-1 100 101 102 103 104 105 Wavelength
Productth S -10 A 2 3 4 5 6 7 H 40 10 10 10 10 10 10 P 0 20 40 60 80 100 FR EQUENCY, f (Hz) CAPACITANCE, C L (pF) Figure 6 : Gain Bandwidth Product versus Supply Figure 9 : Slew Rate versus Supply Voltage Voltage z H120 M 0.05 ( T amb= 25°C ) T = 25°C P100 R = 1M / amb SR B
Versuch, 15 u. fehlen
geschrieben 29.8.30
Dr. Schibben
Ostern 1.5.30-2,5 u. fehlen
Bleiben nach Rest. 25 u.
Fr. Schibben
Verletzung zum völligen Kriegsdienst unpassend
Rest. mit der Rest. 23.7.30 (über 1 J. Versuch)
Verkehr anfangen
15. Mai 1930
Schibben
Current Gain 100 10 25⋅C T = –25⋅C 75⋅C VO= 0.2 V A A 10 TA= –25⋅C S 25⋅C ( L N V 75⋅C R 1 E R G C L 1 R O T 0.1 T E P L I C ,i , 0.01 V IC VO= 5 V 0.001 0.1 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 V , INPUT VOLTAGE (VOLTS
Ambient RqJA 109 59 ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) VF TJ= 25°C TJ= 100°C V (F = 2.0 A) 0.31 0.200 (I= 4.0 A) 0.33 0.225 F (F = 8.0 A) 0.35 0.250 Maximum Instantaneous Reverse Current (Note 1) R TJ= 25°C TJ= 100°C mA (Rated dc VoltageR V = 5.0 V) 2.0 100 (Rated
entspricht der Zähler-Betriebslage).
2. Spannung erst nach mindestens 15s Wartezeit anlegen.
Relais 7FR 50 1=0
100 V
Nr. Z / 55 * 535 * 702
RE = 18...250V~
RA = 3000
0,1A 25VA
10 11
1 2
85
SIEMENS
C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 13 16 Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 71359 www.vishay.com S09-0221-Rev. D, 09-Feb-09 1 Si4838DY Vishay Siliconix SPECIFICATIONS T = 25 °C, unJess otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit
= FS − 0.25 dB 46.1 dB (min) fIN= 10.1 MHz, V IN = FS − 0.25 dB 48 44.5 dB SNR Signal-to-Noise Ratio fIN= 29 MHz, V IN = FS − 0.25 dB 47.2 dB (min) SFDR Spurious Free Dynamic Range fIN= 10.1 MHz, V IN = FS − 0.25
inspection of the ground • Material connection, and simplifies rework on the bench, if necessary. — Type FR-4 epoxy glass laminate and prepreg • Refer to the WirelessUSB LS IC PCB PAD Layout Design — HTE Copper ½ oz copper foil external layers Details in Figure 4. • For the RFIC (28-pin IC) note the paddle
18. Startup Current vs. CC Voltage Temperature 40 25 ) ) ( 35 ( 24 T E N G 23 R 30 T R O 22 U 25 V 21 E P G 20 T 20 A R A 15 T 19 L S P M 18 U 10 M R N 17 T 5 M 16 S 0 15 −50 −25 0 25 50 75 100 125 −50 −25 0 25 50 75 100 125 TEMPERATURE (°C) TEMPERATURE
1) Supply Input Voltage 30V LX, EN Voltage VIN 0.3V FB, BS LX Voltage 4V Power Dissipation,D@ T A= 25°C SOT23 6, 0.6W Package Thermal Resistance (Note 2) θJA 250°C/W θJC 130°C/W Junction Temperature Range 150°C Lead Temperature (Soldering, 10 sec.) 260°C Storage Temperature Range 65°C to 150°C Dynamic
Characteristic Thermal Resistance,Junction-to-Ambientote 2) R θJA 89 ℃/W Electrical Characteristics (T =25℃Anless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS VGS0V I D250μA 30 33 - V Zero Gate Voltage Drain Current IDSS V DS0V,V =GS
application Power transformers Material N27 Base material MnZn Symbol Unit Initial permeability μi 2000 (T = 25 °C) ±25% Flux density BS(25 °C) mT 500 (H = 1200 A/m, f = 10 kHz)SB(100 °C) mT 410 Coercive field strength H c25 °C) A/m 23 (f = 10 kHz) H c(100 °C) A/m 19 Optimum fmin kHz 25 frequency range fmax kHz
externally clocked data byte 4 bit 4 = 0 3.9 5.6 7.3 pF data byte 4 bit 4 = 1 5 6 7 pF Crystal: 32.768 kHz fr series resonance data byte 4 bit 4 = 1 - 32.768 - kHz frequency −6 −6 f/r frequency deviation −20 × 10 - +20 × 10 C 0 shunt capacitance - - 3.5 pF R S series resistance - - 80 k −6 −6 r r(25 °C) temperature
Anmeldenummer: 81104869.3 (22) Anmeldetag: 24.06.1981 (84) Benannte Vertragsstaaten: (72) Erfinder: AT CH FR LI Stahlschmidt, Robert D-33729 Bielefeld (DE) (30) Priorität: 25.06.1980 DE 8016723 U 10.12.1980 DE 8032798 U (74) Vertreter: Hoefer, Theodor, Dipl.-Ing. (71) Anmelder: Stahlschmidt, Robert Hoefer,
alle MKP z. B. MKP 25/403 D MP6/400 Duh alle ab 1984 ------------------------------------------------------------------------------------------------------------------------------------------------------------------------
Symbol Parameter Max. Units V Drain-Source Voltage 30 V DS VGS Gate-to-Source Voltage ±12 V D @ TC= 25°C Continuous Drain CurreGS,@ 10V 62 I @ T = 70°C Continuous Drain Current,@ 10V 52 A D C GS DM Pulsed Drain Curr nt 248 PD@T C 25°C Maximum Power DissipatRon 87 W PD@T C 70°C Maximum Power DissipatRon
Symbol Parameter Max. Units V Drain-Source Voltage 30 V DS VGS Gate-to-Source Voltage ±12 V D @ TC= 25°C Continuous Drain CurreGS,@ 10V 62 I @ T = 70°C Continuous Drain Current,@ 10V 52 A D C GS DM Pulsed Drain Curr nt 248 PD@T C 25°C Maximum Power Dissipat on 87 W PD@T C 70°C Maximum Power Dissipat on
Symbol Parameter Max. Units V Drain-Source Voltage 30 V DS VGS Gate-to-Source Voltage ±12 V D @ TC= 25°C Continuous Drain CurreGS,@ 10V 62 I @ T = 70°C Continuous Drain Current,@ 10V 52 A D C GS DM Pulsed Drain Curr nt 248 PD@T C 25°C Maximum Power Dissipat on 87 W PD@T C 70°C Maximum Power Dissipat on
Symbol Parameter Max. Units V Drain-Source Voltage 30 V DS VGS Gate-to-Source Voltage ±12 V D @ TC= 25°C Continuous Drain CurreGS,@ 10V 62 I @ T = 70°C Continuous Drain Current,@ 10V 52 A D C GS DM Pulsed Drain Curr nt 248 PD@T C 25°C Maximum Power Dissipat on 87 W PD@T C 70°C Maximum Power Dissipat on
of Windows.
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The Product
IRLML2502TRPbF Absolute Maximum Ratings Parameter Max. Units VDS Drain- Source Voltage 20 V I @ T = 25°C Continuous Drain Current, @ 4.5V 4.2 D A GS ID@ T A 70°C Continuous Drain CurrentGS@ 4.5V 3.4 A IDM Pulsed Drain Current 33 P @T = 25°C Power Dissipation 1.25 D A W PD@T =A70°C Power Dissipation 0.8
IRLML2502TRPbF Absolute Maximum Ratings Parameter Max. Units VDS Drain- Source Voltage 20 V I @ T = 25°C Continuous Drain Current, @ 4.5V 4.2 D A GS ID@ T A 70°C Continuous Drain CurrentGS@ 4.5V 3.4 A IDM Pulsed Drain Current 33 P @T = 25°C Power Dissipation 1.25 D A W PD@T =A70°C Power Dissipation 0.8
5.2 T = 70 °C 4.2 a, b A A Pulsed drain current (t = 100 μs) IDM 25 T = 25 °C 2.3 Continuous source-drain diode current C S TA= 25 °C 1.7 a, b Single pulse avalanche current L = 0.1 mH IAS 8 Single pulse avalanche energy EAS 3.2 mJ TC= 25 °C 2.8 TC = 70 °C 1.8 Maximum
Region Deutschland stammen aus Kohle spezifische CO2-Emissionen (gCO2eq/kWh) CO2-arm durch Nutzung von 25.37 % der installierten Leistung (9.62 GW / 37.9 GW) macht 58.29 % der Emissionen aus (189t CO2eq pro Minute / 317t CO2eq pro Minute) mit einer CO2-Intensität von 1152 gCO2eq/kWh Stromerzeugung Ursprung
represents the single wavelength which defines the color 6. Maximum allowable dissipation is derived fr,m =VV, = V, = 5.25 Volts, 20 LEDs on per character. 7 7. The luminous stearance of thLED may be calculated using the following relationships: Lv (Lux)= Iv(Candela)/A (Metre)' Lv (Footlamberts= T I" (
Mode Resistance 6.4 MΩ IB Input Bias Current VCM = VEE 0.3V –3.8 –1.35 µA l –4 µA V = V – 0.3V 0.3 1.25 µA CM CC l 2.1 µA IOS Input Offset Current l –0.75 ±0.1 0.75 µA CMRR_ Common Mode Input Range, Low VCM VCM = VEE 0.2V to CC – 1.5V 51 69 dB LVCM Region l 46 dB CMRR_FR Common Mode Rejection Ratio (Measured
Mode Resistance 6.4 MΩ IB Input Bias Current VCM = VEE 0.3V –3.8 –1.35 µA l –4 µA V = V – 0.3V 0.3 1.25 µA CM CC l 2.1 µA IOS Input Offset Current l –0.75 ±0.1 0.75 µA CMRR_ Common Mode Input Range, Low VCM VCM = VEE 0.2V to CC – 1.5V 51 69 dB LVCM Region l 46 dB CMRR_FR Common Mode Rejection Ratio (Measured
Sleep mode (Slow Clocking mode)........................................................................25 3.5.3 Wake up SIM300 from SLEEP mode....................................................................25 3.6 Summary of state transitions (except SLEEP mode) .......................................
IRLML6401TRPbF Absolute Maximum Ratings Parameter Max. Units VDS Drain- Source Voltage -12 V D @ TA= 25°C Continuous Drain CurrentGS@ -4.5V -4.3 D @ TA= 70°C Continuous Drain CurrentGS@ -4.5V -3.4 A DM Pulsed Drain Current -34 P @T = 25°C Power Dissipation 1.3 D A W PD@T A 70°C Power Dissipation 0.8 Linear
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