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PDF
RCDN9.pdf
C 3 R R C R Q220 8.E_3.3V_CONT R466 1 R300 R302 9 0 8 Q204 2 R247 9.USB_OE R367 R442 2 2 3 2 J R246 10.DM_VBUS_CONT R465 0 R R R 2 4 C366 D 11.E_REQ R366 2 3 3 A 12.E_SPDIF R354 R243 Q C C R244 13.E_SPICS
in „Hifi Kompaktanlage mit Bluetooth Sender ausstatten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sh7020.pdf
I I D D / H R A D R H R S S S S A A 5 4 3/ 2 1 0 / A / B/R/W / / / C/C/C / / / 1 1 1 1 1 1 9 8 7 6 5 4 3 2 1 0 3 2 1 0 1 0 9 8 7 6 P P P P P P P P P P P P P P P P C C C C A A A A A A1 1 Port A Address A15 RES(Vpp)*2 A14 WDTOVF A13 MD2 MD1 1 1 A12 PROM or masked ROM* RAM
in „welche GPS-Maus ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MX25L6405D__3V__64Mb__v1.5.pdf
PART NO. CLOCK CURRENT CURRENT Temperature PACKAGE Remark (MHz) MAX. (mA) MAX. (uA) 8-SOP MX25L1605DM2I-12G 86 25 20 -4° C~85°C (200mil) Pb-free MX25L1605DMI-12G 86 25 20 -40°C~85°C 16-SOP Pb-free 8-SOP MX25L1605DM1I-12G 86 25 20 -40°C~85°C (150mil) Pb-free MX25L1605DPI-12G 86 25 20 -40°C~85°C 8-PDIP Pb-free (300mil) 8-WSON MX25L1605DZNI-12G 86 25 20 -40°C~85°C Pb-free (6x5mm) 8-USON MX25L1605DZUI-12G 86 25 20 -40°C~85°C (4x4mm) Pb-free MX25L3205DZNI-12G 86 25 20 -40°C~85°C 8-WSON Pb-free (6x5mm) 8-SOP MX25L3205DM2I-12G 86 25 20 -4° C~85°C Pb-free (200mil
in „FLASH Memory Chip im Lenovo X200 von 8 MB auf 16 MB vergroessern“ · PC Hard- und Software ·
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PDF
uA710.pdf
Input Bias Current 13 20 J.LA Voltage Gain 1250 1700 Output Resistance 200 n Output Sink Current ~VIN ~ 5 mV, VOUT = 0 2.0 2.5 mA Response Time (Note 3) 40 ns The following specifications apply for _55° C < TA < +125°C: Input
in „Nun ich auch mal - Suche Datenblätter zu ICs“ · Mikrocontroller und Digitale Elektronik ·
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PDF
73493.pdf
Symbol Limit Unit V Drain-Source Voltage DS - 40 V Gate-Source Voltage V GS ± 20 TC = 25 °C - 110a TC= 70 °C - 110a Continuous Drain Current JT = 175 °C) ID b, c TA= 25 °C 39 T = 70 °C b, c A 33 A Pulsed Drain Current DM 240 TC = 25 °C 110 Continuous Source-Drain Diode Current IS b, c TA = 25 °C 10 I Avalanche Current L = 0.1 mH AS 75 Single-Pulse Avalanche Energy E AS 281 mJ TC = 25 °C 375 TC= 70 °C 262 Maximum Power Dissipation T = 25 °C PD b, c W A 15 TA= 70 °C 10.5b, c Operating Junction
in „Messungen mit DMM Dual-Slope Verfahren am PMOS“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL3713.pdf
Symbol Parameter Max Units VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 V D @ TC= 25°C Continuous Drain CurreGS, V0V 260h I @ T = 100°C Continuous Drain Current@ 10V 180h A D C GS DM Pulsed Drain Current 1040h P @T = 25°C Maximum Power Dissipation 330 D C W PD@Tc = 100°C Maximum Power
in „Logic Level Mosfet - Welcher "kann mehr"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
datasheet.pdf
Lower Leakage • Popular SOT-227 Package G • Faster Switching S MAXIMUM RATINGS All Ratings: TC= 25°C unless otherwise specified. Symbol Parameter APT20M11JVFR UNIT VDSS Drain-Source Voltage 200 Volts ID Continuous Drain Current @CT = 25°C 175 I 1 Amps DM Pulsed Drain Current 700 V Gate-Source Voltage
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PDF
PSMN5R5-60YS.pdf
VGS = 10 V;DI = 15 A; - - 8.3 mΩ on-state resistance Tj= 100 °C; see Figure 12 VGS = 10 V;DI = 15 A; - 3.6 5.2 mΩ Tj= 25 °C; see Figure 13 [1] Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified
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PDF
pnFET_Si1551.pdf
Duty Cycle = 0.5 i n c r a e d t p 0.2 e I Notes: f a E r 0.1 P e e 0.1 DM l T 0.05 m t1 o 2 N 0.02 1. Duty Cycle, D = 2 2. Per Unit BasthJA 400 °C/W 3. JM-TA= PDM thJAt) Single Pulse 4. Surface Mounted 0.01 -4 -3 -2 -1 10
in „Kann diese Schaltung den 74HC132 killen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
pnFET_Si1551.pdf
Duty Cycle = 0.5 i n c r a e d t p 0.2 e I Notes: f a E r 0.1 P e e 0.1 DM l T 0.05 m t1 o 2 N 0.02 1. Duty Cycle, D = 2 2. Per Unit BasthJA 400 °C/W 3. JM-TA= PDM thJAt) Single Pulse 4. Surface Mounted 0.01 -4 -3 -2 -1 10
in „Warum sperrt P-Kannal FET M1 nicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
si1551dl.pdf
Duty Cycle = 0.5 i n c r a e d t p 0.2 e I Notes: f a E r 0.1 P e e 0.1 DM l T 0.05 m t1 o 2 N 0.02 1. Duty Cycle, D = 2 2. Per Unit BasthJA 400 °C/W 3. JM-TA= PDM thJAt) Single Pulse 4. Surface Mounted 0.01 -4 -3 -2 -1 10
in „CMOS: NAND bauen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irfh5300pbf.pdf
10V 100 h IDM Pulsed Drain Current c 400 Power Dissipation g P DT =A25°C 3.6 W P D T C(Bottom)25°C Power Dissipation g 250 Linear Derating Factor g 0.029 W/°C T J Operating Junction and -55 to + 150 T Storage Temperature Range °C STG Notes
in „Beschaltung Mosfet für Brushless-Regler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RJH60F5DPQ.pdf
Operation Area Typical Output Characteristics 1000 160 Pulse Test 10.5 V 10 V ) ) Ta = 25 ( ( 11 V C 100 PW C 120 9.5 V I =1 I 13 V n 1 0μs n e 0 e 15 V u 10 μs u 80 C C 9 V o o c c l 1 l 40 o o 8.5 V C C Tc = 25°C VGE = 8 V Single pulse 0.1 0 0 1 2 3 4 5 1 10 100 1000 Collector to Emitter Voltage CE
in „Inverter Elektroden-Schweißgerät abgeraucht -> IGBT defekt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
doc7559.pdf
disturbances or connect load (Co). It is detailed in Figure 4. Figure 4. Second Order Motor Model U 1 I C em M 1 Ω + K + -- R+Lp -- f + Jp E C o K K*U(p) + Co(R+Lp) Ω(p)= (f + Jp)(R + Lp) + K² 5 7559B–AVR–12/06 Window-lift Model In addition to the DC motor model, the components from the window-lift system
in „Stromflussabbruch mit Arduino Nano steuern?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MTW8N60E.PDF
Non–Repetitivp (t 10 ms) VGSM 〉 40 Vpk Drain Current — Continuous D 8.0 Adc Drain Current — Continuous @ 100⋅C D 6.4 Drain Current — Single Pulse (t 10 s) I 24 Apk p DM Total Power Dissipation P D 180 Watts Derate above 25⋅C 1.43 W/⋅C Operating and Storage Temperature Range TJ, stg –55 to 150 ⋅C Single Pulse
in „Identifizierung Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
156346062-STi7105.pdf
l F23 o o G13 e G18 a t G19 a l G20 e i S t G22 VDD1V8_2V5 1.8 Digital LMI DDR2 1.8/2.5 V power y n G23 o K10 t e n d K11 o f K12 - i n L12 n o L13 i n C M13 C M16 e M17 i a c i a r n I 8065505 Rev D 63/313 Connections
in „Motorola Vip19x0 (Big brother of Vip1710)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
si4946ey.pdf
DM 30 A Continuous Source Current (Diode Conduction) S 2 Single Avalanche Current IAS 12 L = 0.1 mH Single Avalanche Energy EAS 7.2 mJ TA= 25_C 2.4 Maximum Power Dissipation PD W TA= 70_C 1.7 Operating
in „Frage zu Ic SI4948“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
lm35.pdf
SOIC-8, no small heat TO-220, no sink heat fin sink heat fin heat sink fin heat sink Still air 400°C/W 100°C/W 180°C/W 140°C/W 220°C/W 110°C/W 90°C/W Moving air 100°C/W 40°C/W 90°C/W 70°C/W 105°C/W 90°C/W 26°C/W Still oil 100°C/W 40°C/W 90°C/W 70°C/W — — — Stirred oil 50°C/W 30°C/W 45°C/W 40°C/W — —
in „Signalkonverter Ladegerät“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
lm35.pdf
SOIC-8, no small heat TO-220, no sink heat fin sink heat fin heat sink fin heat sink Still air 400°C/W 100°C/W 180°C/W 140°C/W 220°C/W 110°C/W 90°C/W Moving air 100°C/W 40°C/W 90°C/W 70°C/W 105°C/W 90°C/W 26°C/W Still oil 100°C/W 40°C/W 90°C/W 70°C/W — — — Stirred oil 50°C/W 30°C/W 45°C/W 40°C/W — —
in „Linearisierung NTC und Anpasssung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PMV15UNEA.pdf
Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 °C - 20 V DS j VGS gate-source voltage -8 8 V D drain current V GS = 4.5 V; amb = 25 °C [1] - 7 A V GS = 4.5 V; amb = 100 °C [1] - 4.4 A DM peak drain current T amb= 25 °C; single pulse; p ≤ 10 µs - 28 A Ptot total power dissipation T amb= 25 °C [2] - 610 mW [1] - 1.4 W T sp= 25 °C - 8.3 W Tj junction temperature -55 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C Source-drain diode I source current T = 25 °C [
in „Wahl des SynchrongleichrichterMOSFETs für Buck Converter“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TC1797_UM_v1.1.pdf
implementation-specific details are defined in bits 24 to 26. ICR Interrupt Control Register (F7E1 FE2C H) Reset Value: 0000 0000 H 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 C 0 ONE CARBCYC PIPN CYC r rw rw rh 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 IE CCPN r rwh rwh Field Bits Type Description CARBCYC
in „TC1797 - keine Datenblätter?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BUZ11.pdf
Voltage (GS= 20 k ) 50 V V GS Gate-source Voltage 〉 20 V o ID Drain Current (continuous) atcT = 25 C 33 A DM Drain Current (pulsed) 134 A P tot Total Dissipation atcT = 25 C 90 W o Tstg Storage Temperature -65 to 175 C T Max. Operating Junction Temperature 175 oC j DIN HUMIDITY CATEGORY (DIN 40040)
in „Transistorschalter für Glühlampe 12V 5W“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Laborausstattung.pdf
50000] True RMS 3 Voltcraft VC-940 Hand-Multimeter USB - [00000 ... 39999] True RMS 1 Unitech UT-71C Hand-Multimeter USB - [00000 ... 39999] True RMS 1 Unitech UT-60H Hand-Multimeter --- - [00000 ... 39999] True RMS 1 SMTech DM-620 Hand-Multimeter --- - [00000 ... 49999] True RMS, Datalogger 1 Unitech
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PDF
STM32F405-7x.pdf
RX/ TIM1_CH3/ 43 D3 69 102 D15 121 PA10 I/O FT OTG_FS_ID/DCMI_D1/ EVENTOUT USART1_CTS / CAN1_RX 44 C1 70 103 C15 122 PA11 I/O FT / TIM1_CH4 / OTG_FS_DM/ EVENTOUT USART1_RTS / CAN1_TX/ 45 C2 71 104 B15 123 PA12 I/O FT TIM1_ETR/ OTG_FS_DP/ EVENTOUT PA13 46 F8 72 105 A15 124 (JTMS-SWDIO) I/O FT JTMS-SWDIO
in „STM32 DCMI (Kamera) Pinbelegung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
heag.pdf
W/m tisiert. Die über 1 Jahr registrierten Wertepaare von Tem- und 25°C, einem Wertepaar, das bei uns praktisch nie peratur und flächenbezogener Bestrahlungsleistung (10 vorkommt. minütige Mittelwerte) werden über der diskretisierten Multipliziert man in Bild 13 die diskreten
in „Wirkungsgrad = Spannungsabfall?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCU_-_HR8P506_Datasheet_e.pdf
minutes bit WM<1>: 2 minutes bit WM<0>: 1 minute bit RTC Day Alarm Register (RTC_DA) Offset addresH:0C Reset value:xxxxxxxx_xxxxxxxx_xxxxxxxxBxxxxxxxx 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 Reserved 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Reserved DH<5:0> Reserved DM<6:0> — bit31-14 — — DH<5>: 24 hr format:20 hours bit 12hr format:1 presents PM, 0 presents AM DH<4>: 10 hours bit DH<5:0> bit13~8 R/W DH<3>: 8 hours bit DH<2>: 4 hours bit DH<1>: 2 hours bit DH<0>: 1 hour bit — bit7 — — DM<6>: 40 minutes bit DM<5>: 20 minutes bit DM<4>: 10 minutes bit DM<6:0> bit6~0 R/W DM<3>: 8 minutes bit DM
in „Re - Programmierung eines Cortex M0“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Devices.txt
14 TP06SQ 14 RES10 14 QG5860 14 MA04-2 14 MA04-1 14 L-EU0204/5 14 IRFP240 14 CPOL-EU153CLV-0405 14 C1206 13 NC 13 LEDCHIP-LED0805 13 JP1Q 13 IRF540 13 HD-H103 13 ELC-5 13 CRYSTALHC49U70 13 CPOL-EUSMCC 13 CPOL-EUB45181A 13 B-DIL 13 1N4446 12 TRIM_EU-B25P 12 TLC5940-PWPOTV 12 SJ 12 RESEU-18 12 R 12 C-
in „[KiCad] Bibliotheksaufbau - Konzeptideen gesucht“ · Platinen ·
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PDF
ssr2n60a.pdf
12 35 VDD300V,I =DA, r Rise Time -- 15 40 td(off) Turn-Off Delay Time -- 41 90 ns RG =18Ω See Fig 13 f Fall Time -- 16 40 OO 5 Q g Total Gate Charge -- 15 21 VDS480V,V =GSV, Q nC gs Gate-Source Charge -- 2.6 -- D =2A Qgd Gate-Drain( “Miller”) Charge -- 6.7 -- See Fig 6 & Fig 12 OO 5 Source-Drain Diode
in „Ersatz für SSR2N60A“ · Analoge Elektronik und Schaltungstechnik ·
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R1610C.PDF
TMRIN1/PIO0 9 94 D1 TMRIN0/PIO11 10 93 D2 11 92 TMROUT1/PIO1 D3 TMROUT0/PIO10 12 91 VDDIO DRQ1/INT6/PIO13 13 90 D4 DRQ0/INT5/PIO12 14 89 D5 SIN0/SAD14 15 88 D6 16 R1610C 87 SOUT0/SAD13 D7 RTS0_n/SAD9 17 86 DQML VDDIO 18 85 WE_n DTR0_n/SAD12 19 84 CAS_n CTS0_n/SAD8 20 83 VSSC 21 82 DSR0_n/SAD11 RAS_n DCD0
in „Hilfe JTAG für IP Webcam ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
APEEL_JEDEC.pdf
Testvektoren jetzt funktionsfaehig ! -Vext kommt low-aktiv ! DATE: 12.08.1997 *DF PEEL *DD 18CV8 *DM ICT *QP20 *QF2696 *F0 * N Output Pin 19 * L0000 1111 1111 1011 1111 1111 1111 1111 1111 1111 * L0036 1111 1111 1111 1111 1111 1111 1111 1011 1111 * L0072 1111 1111 1111 1111 1111 1111 1011 1111 1111
in „Suche Infos zu ICT Peel 18CV8P 35NS Software JDEC File erzeugen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
2206071616_BL-Shanghai-Belling-BLM3404_C3032968.pdf
(off) V GS0V,R GEN=3Ω - 14.5 - nS Turn-Off Fall Time t - 3.5 - nS f Total Gate Charge Q g - 5.2 - nC V DS5V,I =DA, Gate-Source Charge Q gs - 0.85 - nC VGS10V Gate-Drain Charge Q gd - 1.3 - nC Drain-Source Diode Characteristics (Note 3) Diode Forward Voltage VSD V GSV,I =SA - - 1.2 V (Note 2) Diode Forward
in „Betrieb von MOSFETS bei maximalstrom?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlml6302.pdf
0.61A c ) TJ= 25°C t ( i n e e R 1.5 r T J 150°C n C 1 O e c d r u e u o l i 1.0 o - a - - r - i N i 0.1 r ( r D D , 0.5 , n ID ( - V = -10V D DS R 0.01 20µs PULSE WIDTH▯ 0.0 VGS = -4.5V▯ A 1.5 2.0 2.5 3.0 3.5
in „LCD-Hintergrundbeleuchtung dimmen (PWM)“ · Mikrocontroller und Digitale Elektronik ·
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Datei
stm32f4x7_eth_bsp.c
(LAN8710A_PHY_ADDRESS, 2); // 0x0007 PHYID_LO = ETH_ReadPHYRegister(LAN8710A_PHY_ADDRESS, 3); // 0xC0Fx if( (PHYID_HI != 0x0007) || (PHYID_LO != 0xC0f1) ){ // no phy no fun -> endless loop while(1); } /* Configure Ethernet */ EthStatus = ETH_Init(Ð_InitStructure, LAN8710A_PHY_ADDRESS); /* Enable
in „Olimex STM32E407, FreeRTOS und lwip“ · Mikrocontroller und Digitale Elektronik ·
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PDF
1912111437_Vishay-Intertech-VS-10BQ015HM3-5BT_C413465.pdf
www.vishay.com/doc?91000 VS-10BQ015HM3 www.vishay.com Vishay Semiconductors ) ( 10 100 t e r ) 100 °C u T = 125 °C A 10 C J ( 75 °C r n w e o r 1 50 °C F 1 C s e o TJ= 100 °C r 25 °C e TJ= 75 °C v a e 0.1 n Tj = 25°C R t R n I - 0.1 0.01 F I 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 3 6 9 12 15 VFM - Forward
in „1N5817 Schottky Alternative“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FGA5065ADF.pdf
Continued) 0 5 Symbol Parameter Test Conditions Min. Typ. Max Unit A D Qg Total Gate Charge - 72.2 - nC F Q Gate to Emitter Charge VCE = 400 VC I = 50 A, - 13.5 - nC — ge VGE = 15 V Qgc Gate to Collector Charge - 28.5 - nC 6 0 , Electrical Characteristics of the Diode C = 25°C unless otherwise noted 5
in „Inverter Schweißgerät, Alternative IGBTs kompatibel? (Datenblätter inside)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AS5048_Datasheet.pdf
Transmission N+2 The NOP command frame looks like follows. Figure 28: NOP Command NOP Command Bit MSB 14 13 12 11 10 9 8 7 6 5 4 3 2 1 LSB 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 The chip’s response on this command is 0x0000 AS5048A/AS5048B – 20 amsDatasheet: 2014-Jun-05 [v1-06] I²C Interface I²C Interface TheAS5048Bsupports2
in „Drehwinkelmessung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Baumappe_BX-222P_1_.pdf
1 1 1 1 Q1 2 10n 100k 47u C10 100n 100n 0 C11 2 4 6 8 1 100n C18 X E TP4 R38, R42, R44, R45inFestspannungsversion C12 C15 S C16 12MHz C17 100n 100n 1 3 5 7 9 R der LDOsIC1undIC9unbestückt C13 100n 22p 22p 100n Bild A2: Schaltplan
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PDF
MPT2P50E.pdf
CASE 221A Drain Current – Continuous ID 2.0 Adc STYLE 5 MTP2P50E Drain Current – Continuous @ 100⋅C ID 1.6 LLYWW Drain Current – Single Pupse (t 10 s) DM 6.0 Apk 1 1 3 Total Power Dissipation PD 75 Watts 2 Gate Source Derate above 25⋅C 0.6 W/⋅C 3 2 Operating and Storage Temperature TJ, stg –55 to
in „Ersatztypen für Diode“ · Mikrocontroller und Digitale Elektronik ·
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PDF
bs208.pdf
mode vertical D-MOS transistor Product specification April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification P-channel enhancement mode vertical BS208 D-MOS transistor FEATURES • Direct interface to C-MOS • High-speed switching handbook, halfpage d • No secondary
in „Mosfet BS208 sperrt nicht bei >3V“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BSS89.pdf
Product specification 1998 Apr 24 Supersedes data of 1997 Jun 20 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode BSS89 vertical D-MOS transistor FEATURES PINNING - TO-92 variant • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION
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PDF
BSN10.pdf
mode vertical D-MOS transistors Product specification April 1995 File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSN10; BSN10A D-MOS transistors FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, SYMBOL PARAMETER MAX.
in „Pegelwandler lässt TWI erfrieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ST7735_128x160_SPI_Display.pdf
Table 9.11.1 AC characteristics of Tearing Effect Signal Idle Mode Off (Frame Rate = 60 Hz, Ta=25°C) Symbol Parameter min max unit description tvdl Vertical Timing Low Duration 13 - ms tvdh Vertical Timing High Duration 1000 - s thdl Horizontal Timing Low Duration 33 - s thdh Horizontal Timing Low
in „ST7735 an MCU“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF830.pdf
gate Voltage (R = 20 k ) 500 V GS VGS Gate-source Voltage 〉 20 V o ID Drain Current (continuous) at c = 25 C 4.5 A ID Drain Current (continuous) at c = 100 C 2.9 A DM ( ) Drain Current (pulsed) 18 A P Total Dissipation at T = 25 C 100 W tot c Derating Factor 0.8 W/oC dv/dt() Peak Diode Recovery voltage
in „Spannunngsübertragung mit Luftspulen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
APPCHP6.PDF
505 Thyristors and Triacs Power Semiconductor Applications Philips Semiconductors 15 Choice of L & C 14 13 The width of the half sine pulse from an LC circuit is: t 12 a 11 tpulse π F i 10 and the theoretical peak value of the current is: l 9 l 8 C M 7 Ipeak V n 6 L e 5 u 4 These equations assume
in „Motorsteuerung verbessern bei el. Nähmaschine“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
APPCHP6.pdf
505 Thyristors and Triacs Power Semiconductor Applications Philips Semiconductors 15 Choice of L & C 14 13 The width of the half sine pulse from an LC circuit is: t 12 a 11 tpulse π F i 10 and the theoretical peak value of the current is: l 9 l 8 C M 7 Ipeak V n 6 L e 5 u 4 These equations assume
in „defekter Drehzahlsteller eines Schwingschleifers“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
APPCHP6.PDF
505 Thyristors and Triacs Power Semiconductor Applications Philips Semiconductors 15 Choice of L & C 14 13 The width of the half sine pulse from an LC circuit is: t 12 a 11 tpulse π F i 10 and the theoretical peak value of the current is: l 9 l 8 C M 7 Ipeak V n 6 L e 5 u 4 These equations assume
in „AQH2213 SSR Snubber dimensionieren“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL540N-UMW.pdf
Time VGS10V,R GEN =3Ω - 29 - nS d(off) f Turn-Off Fall Time - 7 - nS Q g Total Gate Charge - 39 - nC V DS0V,I =D8A, Q gs Gate-Source Charge - 8 - nC V GS0V Q gd Gate-Drain Charge - 12 - nC Drain-Source Diode Characteristics (Note 3) VSD Diode Forward Voltage V GSV,I =S0A - - 1.2 V (Note 2) S Diode Forward
in „Problem mit Mosfet IRL540 an 52V, öffnet nicht mehr“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
btm330_datasheet.pdf
kHz 2.402 115 150 - kHz maz △ f2 “Minimum 2.441 115 150 - 115 kHz Modulation” 2.480 115 150 - kHz C/I co-channel - 10 11 <= 11 dB Adjacent channel selectivity C/I F=F 0 - -4 0 <= 0 dB (3)(5) +1 MHz Adjacent channel selectivity C/I F=F0- - -4 0 <= 0 dB (3)(5) 1MHz Adjacent channel selectivity C/I F=
in „Rayson BTM-330 Problem“ · Mikrocontroller und Digitale Elektronik ·
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PDF
btm330_datasheet.pdf
kHz 2.402 115 150 - kHz maz △ f2 “Minimum 2.441 115 150 - 115 kHz Modulation” 2.480 115 150 - kHz C/I co-channel - 10 11 <= 11 dB Adjacent channel selectivity C/I F=F 0 - -4 0 <= 0 dB (3)(5) +1 MHz Adjacent channel selectivity C/I F=F0- - -4 0 <= 0 dB (3)(5) 1MHz Adjacent channel selectivity C/I F=
in „Bluetoothmodul BTM-222“ · Mikrocontroller und Digitale Elektronik ·
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Datei
S6D0154.c
BP=100 LCD_set_reg(0x000B, 0x1105);// NO=0001, SDT=0001, RTN=0101 Frame Frequency LCD_set_reg(0x000C, 0x0000);// RM=0, DM=00, RIM=00 //Delay_ms(100);//100ms 300ms LCD_set_reg(0x0015, 0x0020);// VCIR=010 0X0020 LCD_set_reg(0x0030, 0x0000);// SCN 0 Start from G1 LCD_set_reg(0x0034, 0x013F);// SE1 = 100111111
in „Nokia N95-Display“ · Mikrocontroller und Digitale Elektronik ·