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PDF
DS32kHz_-_temp-co_osci_1min_per_y.pdf
INFORMATION VBAT 5 10 TPIN DS32kHz/BGA 36-Pin BGA 0ºC to +70ºC NC 6 9 NC DS32kHz-N/BGA 36-Pin BGA -40ºc to +85ºC NC 7 8 NC DS32kHz/DIP 14-Pin DIP 0ºC to +70ºC DS32kHz-N/DIP 14-Pin DIP -40ºc to +85ºC DS32kHz 14-Pin DIP Module
in „RTC mit ATMega8“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AN2662-Sensorless-Drive-forSingle-and-Two-PhaseBLDC-Motor-00002662A.pdf
implement its different drive modes, refer to TB3118, Complementary Waveform Generator Technical Brief (DS90003118): (http://ww1.microchip.com/downloads/en/AppNotes/90003118A.pdf). Figure 5-1. CWG Drive Mode © 2018 Microchip Technology Inc. Application Note DS00002662A-page 10 AN2662 System Firmware 6. System
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PDF
MPASM__MPLINK__MPLIB_User_s_Guide.pdf
code nop ;section since no address is ;specified. The section name will ;be, by default, .code. end DS33014K-page 54 © 2009 Microchip Technology Inc. Directives 4.10 code_pack - BEGIN AN OBJECT FILE PACKED CODE SECTION (PIC18 MCUs) 4.10.1 Syntax [label] code_pack [ROM_address] 4.10.2 Description This
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PDF
Ausschaltverhalten_0_47Ohm.pdf
500 D (5A) i (7,5A) D 400 D (10A) D (12,5A) A 300 / D (15A) 1 D (17,5A) · 200 i (20A) i D V 100 uDS(5A) / uDS(7,5A) S D 0 uDS(10A) u uDS(12,5A) u (15A) −100 DS uDS(17,5A) −200 uDS(20A) −20−15−10 −5 0 5 10 15 20 25 30 35 40 45 50 55
in „False Turn On bei Synchron Buck mit eGaN FETs“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Carlo_Gavazzi__EM540DINAV23XS1X.pdf
) Digital outputs/inputs 7 8 9 10 11 12 7 8 9 10 11 12 Fig. 6 Output Fig. 7 Input 07/07/2021 EM540 DS ENG Carlo Gavazzi Controls S13.A. EM540 Communication 7 8 9 10 11 12 7 8 9 10 11 12 7 8 9 10 11 12 M-Bus master B+ A- GND B+ A- GND Fig. 8 M-Bus Fig. 9 RS485 port Fig. 10 Last device on RS485 07/07/2021 EM540 DS ENG Carlo Gavazzi Controls S.p.14 EM540 References Order code EM540 DIN AV2 3X Enter the code option instead of Code Options Description EM540 DIN AV2 3X -
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70667.pdf
Q g VDS = 15 V, GS = 5 V,DI = 6.9 A 15 23 Total Gate Charge Qgt 30 50 nC Gate-Source Charge Qgs V DS= 15 V, GS = 10 V,DI = 6.9 A 7.5 Q Gate-Drain Charge gd 3.5 Gate Resistance Rg f = 1 MHz 2 3 Ω Turn-On Delay Time td(on) 12 20 Rise Time r V DD = 15 V, L = 15 Ω 10 20 I ≅ 1 A, V = 10 V, R = 6 Ω Turn-Off
in „Li-Ion-Anschlussbezeichnungen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Einschaltverhalten_0Ohm.pdf
500 D (5A) i (7,5A) 400 D D (10A) 300 D (12,5A) A / D (15A) 1 200 D (17,5A) · i (20A) i 100 D V uDS(5A) / 0 uDS(7,5A) S D uDS(10A) u−100 uDS(12,5A) u (15A) −200 DS uDS(17,5A) −300 uDS(20A) −20−15−10 −5 0 5 10 15 20 25 30 35 40 45 50
in „False Turn On bei Synchron Buck mit eGaN FETs“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
mt9v403_ds.pdf
Technology, Inc., reserves the right to change products or specifications without notice. MT9V403_DS.fm - Rev. B 1/04 EN 10 ©2004 Micron Technology. Inc. 1/2-INCH VGA (WITH FREEZE-FRAME) CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR Sequential Slave Mode waveforms are shown in Figures 15 and 16, respec- In
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PDF
Datenblatt_PIC12F1822.pdf
used in Power-down mode. Note 1: PIC16F/LF1823 only. 2010 Microchip Technology Inc. Preliminary DS41413B-page 99 PIC12F/LF1822/PIC16F/LF1823 NOTES: DS41413B-page 100 Preliminary 2010 Microchip Technology Inc. PIC12F/LF1822/PIC16F/LF1823 10.0 WATCHDOG TIMER The Watchdog Timer is a system timer that
in „PIC12F1822-PWM Mode“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Datenblatt_PIC12F1822.pdf
used in Power-down mode. Note 1: PIC16F/LF1823 only. 2010 Microchip Technology Inc. Preliminary DS41413B-page 99 PIC12F/LF1822/PIC16F/LF1823 NOTES: DS41413B-page 100 Preliminary 2010 Microchip Technology Inc. PIC12F/LF1822/PIC16F/LF1823 10.0 WATCHDOG TIMER The Watchdog Timer is a system timer that
in „Interrupt-PIC12F1822“ · Mikrocontroller und Digitale Elektronik ·
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PDF
12F1822_1823.pdf
used in Power-down mode. Note 1: PIC16F/LF1823 only. 2010 Microchip Technology Inc. Preliminary DS41413B-page 99 PIC12F/LF1822/PIC16F/LF1823 NOTES: DS41413B-page 100 Preliminary 2010 Microchip Technology Inc. PIC12F/LF1822/PIC16F/LF1823 10.0 WATCHDOG TIMER The Watchdog Timer is a system timer that
in „Auflösung PWM-Mode“ · Mikrocontroller und Digitale Elektronik ·
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PDF
12F1822_1823.pdf
used in Power-down mode. Note 1: PIC16F/LF1823 only. 2010 Microchip Technology Inc. Preliminary DS41413B-page 99 PIC12F/LF1822/PIC16F/LF1823 NOTES: DS41413B-page 100 Preliminary 2010 Microchip Technology Inc. PIC12F/LF1822/PIC16F/LF1823 10.0 WATCHDOG TIMER The Watchdog Timer is a system timer that
in „8Bits und 2Bits in eine Integer-Variable“ · Mikrocontroller und Digitale Elektronik ·
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PDF
12F1822_1823.pdf
used in Power-down mode. Note 1: PIC16F/LF1823 only. 2010 Microchip Technology Inc. Preliminary DS41413B-page 99 PIC12F/LF1822/PIC16F/LF1823 NOTES: DS41413B-page 100 Preliminary 2010 Microchip Technology Inc. PIC12F/LF1822/PIC16F/LF1823 10.0 WATCHDOG TIMER The Watchdog Timer is a system timer that
in „Timer2 auf 10bit einstellen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PIC12FLF1822PIC16FLF1823.pdf
used in Power-down mode. Note 1: PIC16F/LF1823 only. 2010 Microchip Technology Inc. Preliminary DS41413B-page 99 PIC12F/LF1822/PIC16F/LF1823 NOTES: DS41413B-page 100 Preliminary 2010 Microchip Technology Inc. PIC12F/LF1822/PIC16F/LF1823 10.0 WATCHDOG TIMER The Watchdog Timer is a system timer that
in „PIC16lf1823 General purpose I/Os mit Schmitt Trigger ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ATtiny416_50002683A.pdf
footprints and use wire- straps to connect the interfaces. © 2017 Microchip Technology Inc. User Guide DS50002683A-page 9 ATtiny416 Xplained Nano Figure 3-3. Kit Modifications Power disconnect mEDBG disconnect © 2017 Microchip Technology Inc. User Guide DS50002683A-page 10 ATtiny416 Xplained Nano 4. Hardware
in „Neue 8-Bit Tinys vorgestellt: 417/814/816/817“ · Mikrocontroller und Digitale Elektronik ·
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PDF
pl2303.pdf
Temperature TJ 0 25 115 C PL-2303 Product Datasheet - 9 - Document Revision 1.3 Release Date: July, 2002 ds_pl2303_v14 USB Transceiver Characteristics Parameter Symbol Min Typ Max Units Rise and Fall Times: (10%―90%) TR 4 8 15 ns (90%―10%) TF 4 8 15 ns Cross Point V CR 1.3 -- 2.0 V Output Impedance RD 23 28
in „USB - seriell Adapter für 1,- EUR!“ · Mikrocontroller und Digitale Elektronik ·
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PDF
33963.pdf
3.700 7E 126 7.895E+00 5.47 4.662 65 101 2.846E+01 4.64 3.737 7F 127 7.500E+00 5.50 4.699 052694 9/11 DS1633 ABSOLUTE MAXIMUM RATINGS* Voltage on Any Pin Relative to Ground -1.0V to +7.0V Operating Temperature 0⋅C to 70⋅C Storage Temperature –55⋅C to +125⋅C Soldering Temperature 260⋅C for 10 seconds * This
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Class_1_Bluetooth_Module_with_EDR_Support_DS500022-2257897.pdf
ordering Monopole 0.56 part RN41HCI for UART interface; or RN41U for USB interface. Whip 8 Yagi 15 DS50002280B-page 10 2021 Microchip Technology Inc. RN41/RN41N Microchip offers HCI mode in two hardware interfaces: FIGURE 2-6: OPTIONAL SPI • HCI over UART (RN41HCI-I/RM) INTERFACE • HCI over USB (RN41U-I
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PDF
MTW8N60E.PDF
(Positive) — 695 — mV/⋅C Zero Gate Voltage Drain Current IDSS Adc (VDS = 600 Vdc, GS = 0 Vdc) — — 10 (V = 600 Vdc, V = 0 Vdc, T = 125⋅C) — — 100 DS GS J Gate–Body Leakage Current (V = 〉 20 Vdc, V = 0) I — — 100 nAdc GS DS GSS ON CHARACTERISTICS (1) Gate Threshold Voltage VGS(th) (VDS = VGS DI = 250
in „Identifizierung Mosfet“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
GL10N10B4S.pdf
R ○ GL10N10B4S 无锡光磊电子科技有限公司 GL Silicon N-Channel Power MOSFET General Description： VDSS 100 V The GL10N10B4S uses advanced trench technology and ID 10 A design to provide excellDS(ON)ith low gate charge. It PD
in „LED-Strip flackert, trotz 1.5kHz dimmfrequenz.“ · Mikrocontroller und Digitale Elektronik ·
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PDF
2108182030_GL-GL10N10B4S_C2886410.pdf
R ○ GL10N10B4S 无锡光磊电子科技有限公司 GL Silicon N-Channel Power MOSFET General Description： VDSS 100 V The GL10N10B4S uses advanced trench technology and ID 10 A design to provide excellDS(ON)ith low gate charge. It PD
in „Betrieb von MOSFETS bei maximalstrom?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PSMN3R7-100BSE.pdf
3 aaa-028222 10 D (A) Limit DSon = VDS/ D t = 10 µs p 102 100 µs DC 1 ms 10 10 ms 100 ms 1 10-1 10-1 1 10 10 2 103 V DS (V) T mb = 25 °C; IDM is a single pulse Fig. 3. Safe operating area; continuous and peak drain
in „Mysteriöser Mosfet-Tod und der Spirito-Effekt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
1331276981-613264.pdf
16V@ Iout=100mA 8 1.5 V Vclamp Output Clamping Voltage Vcc=28V 11 12.5 V Tr Rising Edge Time CL=1nF, 10~90% 80 150 nS O Tf Falling Edge Time CL=1nF, 10~90% 30 70 nS ©On-Bright Electronics Confidential Preliminary Datasheet - 5 - OB_DOC_DS_333000 OB3330 High Performance LED Lighting Driver TYPICAL PERFOMANCE
in „LED Netzteil identifizierung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PIC16F1939.pdf
is from 1 ms to 256 seconds (typical) • Multiple Reset conditions • Operation during Sleep FIGURE 10-1: WATCHDOG TIMER BLOCK DIAGRAM WDTE<1:0> = 01 SWDTEN 23-bit Programmable WDTE<1:0> = 11 LFINTOSC WDT Time-out Prescaler WDT WDTE<1:0> = 10 Sleep WDTPS<4:0> DS40001574D-page 98 2011-2017 Microchip
in „MPLAB delay und xtalfreq richtig benutzen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
OZ890-Datenblatt.pdf
Output Voltage (See Note 1) load20mA, 2.25 2.5 2.75 V 10V<Vcc<56V, CONFIDENTIAL OZ890 - DS-V1.6 Page 11 OZ890 Line Regulation (See Note 1) load5mA, 10 30 mV 10V<Vcc<56V Load Regulation (See Note 1) 0.2mA<Iload10mA 40 100 mV Vcc=52V 2.5V Current Limit (See
in „Schaltung für aktiven 3s Balancer gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DMN32D2LDF__KDV_ds31238.pdf
V VGS = 0V, D = 250μA Zero Gate Voltage Drain Current @ T C 25°C IDSS ⎯ ⎯ 1 μA VDS = 30V, GS = 0V ±10 VGS = ±10V, VDS= 0V Gate-Body Leakage IGSS ⎯ ⎯ ±1 μA V = ±5V, V = 0V GS DS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V 0.6 ⎯ 1.2 V V = V , I = 250μA GS(th) DS GS D ⎯ ⎯ 2.2 VGS = 1.8V,DI = 20mA
in „(S)uche UPA572“ · Markt ·
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PDF
FQPF9N25C-1120274.pdf
- -1 -1 C 10 -1 0 1 10 2 4 6 8 10 h 10 10 10 V , Drain-SourceVoltage[V] V GSGate-SourceVoltage[V] a DS n n e l Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics Q F E 1.25 T ® e M c 1.00 A 101
in „Mosfet defekt“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Send_to_R_DS18B20.ino
Chantrell http://nathan.chantrell.net // Updated by Martin Harizanov (harizanov.com) to work with DS18B20 // To use with DS18B20 instead of TMP36, a 4K7 resistor is needed between the Digital 9 and Digital 10 of the ATTiny (Vdd and DQ) // To get this to compile follow carefully the discussion here:
in „DS18B20 Sensoren zeigen immer wieder -127°C an“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Display_-_NL10276BC30-04D.pdf
interference between Ft frequency and Hsync frequency may cause beat on the display. Data Sheet EN0488EJ1V0DS00 5 NL10276BC30-04D SUPPLY VOLTAGE SEQUENCE 4.75 V VCC 0.5 V 0 V tr < 80 ms t > 200 ms SignalsNote 1 0 V Valid peiod 10 < t < 35 ms 0 < t < 35 ms Note: 1 Terminations of the signal lines are resistance
in „VIA Nano Board LVDS Connector“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Display_-_NL10276BC30-04D.pdf
interference between Ft frequency and Hsync frequency may cause beat on the display. Data Sheet EN0488EJ1V0DS00 5 NL10276BC30-04D SUPPLY VOLTAGE SEQUENCE 4.75 V VCC 0.5 V 0 V tr < 80 ms t > 200 ms SignalsNote 1 0 V Valid peiod 10 < t < 35 ms 0 < t < 35 ms Note: 1 Terminations of the signal lines are resistance
in „günstiges ITX Mainboard mit LVDS Connector“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Infineon-IRLIB9343-DS-v01_02-EN.pdf
Tj = 25°C Tj = 175°C 0.1 0.1 0.1 1 10 100 0.1 1 10 100 -V , Drain-to-Source Voltage (V) -V , Drain-to-Source Voltage (V) DS DS Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics 100.0 2.0 c D = -14A ) T J 25°C a
in „DS3231 RTC Modul, Raspberry Pi, Zeitschaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
e2928_a8v-vm_se.pdf
A B 256MB Mosel V826632K24SATG-D3 Mosel SS V58C2256804SAT5 • • 512MB Mosel V826664K24SATG-D3 Mosel DS V58C2256804SAT5 • • 256MB Nanya NT256D64S88B1G-5T Nanya SS NT5DS32M8BT-5T • • 512MB Nanya NT512D64S8HB1G-5T Nanya DS NT5DS32M8BT-5T • • 512MB Nanya NT512D64S88C0GY-5T Nanya SS NT5DS64M8CS-5T • • 1G Nanya
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PDF
Class_2_Bluetooth_Module_with_EDR_Support_DS500023-2256355.pdf
7 through 10 are reserved for future use. DS50002328B-page 6 2021 Microchip Technology Inc. RN42/RN42N 2.0 APPLICATION INFORMATION 2.4 Module Mounting Details The following sections provide information on design
in „[V] Microchip Bluetooth Module RN41-I/RM und RN42-I/RM“ · Markt ·
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Datei
Bootloader230.a51
EQU 0xF400 BootloaderEnd EQU 0xFC00-1 BootloaderCfg EQU 0xFFF6 dseg at 0x08 ;overlay data RAM_08: ds 1 RAM_09: ds 1 RAM_0A: ds 3 RAM_0D: ds 3 ; ptr memcpy source RAM_10: ds 1 ; memcpy size RAM_11: ds 4 ; for init key bseg at 0 bWrProtect: DBIT 1 ; 1 disables CodeFlash writing bSoftReset: DBIT 1 ; 1
in „uC für 0,20€ CH552 / CH554 von WCH Billig Micro mit USB Funktion, Chip vorstellung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MC_product_selection_AN.pdf
regulation. 0 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 3 4 5 6 7 8 9 1 1 1 1 1 1 Junction Temperature (°C) FIGURE 10: Thermal Regulation. © 2007 Microchip Technology Inc. DS01088A-page 9 AN1088 CONCLUSION REFERENCES Li-Ion batteries are not only good NiMH and NiCd [1] “Lithium Batteries”, Gholam-Abbas Nazri and batteries
in „Hackbarer(?) 21 EUR Quadcopter“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LUXEON_K2_BLAU_LXK2_PB14_N00.pdf
Figure 21: Maximum forward current vs. ambient teJMAX= 150ºC.ased on T LUXEON K2 Emitter Datasheet DS51 (5/06) 20 Typical Radiation Patterns Typical Representative Spatial Radiation Pattern for White Lambertian 100% 90% 80% ) ( 70% t s 60% e I 50% e t 40% l R 30% 20% 10% 0% -100 -80 -60 -40 -20 0 20
in „[S] LED aus Feuerwehr Singalleuchte (Blitzlicht)“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ds1820.c
#include <avr/io.h> #include "ds1820.h" #include "delay.h" void ds1820_init(void) { DS1820_PORT_DDR &= ~(1<<DS1820_BIT_1WR); /* 1-Wire auf Eingang */ return; } char ds1820_measure(ds1820_scratchpad *sp) { char rc; rc = ds1820_reset_pulse
in „DS18S20 in C“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PIC_Memory_Programming_Specification.pdf
Exit Programming Mode Restore 0SCCAL bits (Figure 3-) Program Configuration Memory (Figure 3-1) Done DS41227D-page 10 Preliminary 2004 Microchip Technology Inc. PIC12F508/509 FIGURE 3-11: PROGRAM FLOW CHART – PIC12F508/509 CONFIGURATION MEMORY Start Enter Programming Mode PC = 0x3FF/7FF (Config Word)
in „Programm aus PIC12F508 laden und verstehen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TLV431-DIO.pdf
VREF,f = <1kHz Z KA impedance K = 0.1 to 15mA 0.25 0.4 Ω TLV431 3 of 14 October 2012 Document number: DS32088 Rev. 6 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated TLV431 Typical Characteristics 56kΩ O/P 75kΩ K S1 100nF 10mA 10kΩ Test Circuit fREFVasurement TLV431 4 of 14
in „Schaltung zur Ürberwachung der 9 Volt Batteriespannung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlml6401.pdf
Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 I = VGS = 0V, f = 1 MHZ D -4.3A Ciss = gs+ Cgd C ds SHORTED ) V DS =-10V 1000 C = C ( rss gd e 8 Coss = Cds Cgd a F Ciss o ( 800 V c e 6 n r i 600 o a - a t 4 C t C 400 a Coss , Crss S 200 G 2 - 0 0
in „CMOS Transistoren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLML6401.pdf
Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 I = VGS = 0V, f = 1 MHZ D -4.3A Ciss = gs+ Cgd C ds SHORTED ) V DS =-10V 1000 C = C ( rss gd e 8 Coss = Cds Cgd a F Ciss o ( 800 V c e 6 n r i 600 o a - a t 4 C t C 400 a Coss , Crss S 200 G 2 - 0 0
in „parasitäres Glimmen beim LED-Muxing. Transistoren? Einstreuungen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLML6401.pdf
Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLML6401 1200 10 I = VGS = 0V, f = 1 MHZ D -4.3A Ciss = gs+ Cgd C ds SHORTED ) V DS =-10V 1000 C = C ( rss gd e 8 Coss = Cds Cgd a F Ciss o ( 800 V c e 6 n r i 600 o a - a t 4 C t C 400 a Coss , Crss S 200 G 2 - 0 0
in „LED Multiplexer glimmt“ · Mikrocontroller und Digitale Elektronik ·
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PDF
si9934bdy.pdf
Resistance r GS D W DS(on) VGS = −2.5 VD I = −1.8A 0.044 0.056 Forward Transconductance g 17 S fs VDS = −10 V,DI = −6.4 A a Diode Forward Voltage VSD IS= −1.7 A,GS = 0 V −0.8 −1.2 V Dynamic b Total Gate Charge Q g 13 20 Gate-Source
in „P-MOS Vgs positiv?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MOSFET_Gate_Driver_Circuit.pdf
that it will not exceed V th However, this method requires a negative power supply. D D iDG= Cgddv DS dt G G S DG= Cgddv DS/ dt S D D R R G G S S Figure 4.9 Mechanism of a gate Figure 4.10 Adding a capacitor across malfunction the gate and source terminals © 2017 - 2018 18 2018-07-26 Toshiba Electronic
in „MOSFET npn/pnp Driver“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MOSFET_Gate_Drive_Circuit_.pdf
that it will not exceed V th However, this method requires a negative power supply. D D iDG= Cgddv DS dt G G S DG= Cgddv DS/ dt S D D R R G G S S Figure 4.9 Mechanism of a gate Figure 4.10 Adding a capacitor across malfunction the gate and source terminals © 2017 - 2018 18 2018-07-26 Toshiba Electronic
in „Gatebeschaltung Treiber“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BSS138.pdf
4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Transfer Characteristics DS30144 Rev. 6 - 2 2 of 5 BSS138 www.diodes.com ) ( E C A 2.45 T I E 2.25 R N 2.05 O C 1.85 VGS= 10V R D = 0.5A U 1.65 S N A 1.45 R V = 4.5V D 1.25 GS E D = 0.075A I 1.05 A M R 0.85 N ,) 0.65 O -55 -5 45
in „Logic Level Hype“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
ds18b20.c
/* Includes ------------------------------------------------------------------*/ #define _DS18B20_LOCAL #include "stm32f10x_lib.h" #include "ds18b20.h" #include "Param.h" #include <string.h> #include <stdio.h> #include <stdlib.h> char Temperature[10]="00.0"; char read_write_buffer[50]; void
in „STM32 DS1820“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BF256_ON.pdf
) g ) R.001 0.01 0.001 0.01 ,s 10 100 1000 10 100 1000 gr – f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 6. Reverse Transfer Admittance Figure 7. Output Admittance versus versus Frequency Frequency 5 1.0 ) ( V = 20 Vdc R E 4 DS F C f = 1 MHz S F A A ( I R E C 3 T C P S 0.5 A R I T 2 V A U E P V = 20 Vdc P , C DS , s f = 1 MHz s 1 C C 0 0 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 –VGS , GATE–SOURCE VOLTAGE (VOLTS) –VGS , GATE–SOURCE VOLTAGE (VOLTS) Figure 8. Input Capacitance versus Figure 9. Reverse Transfer Capacitance
in „BF256, Pinbelegung unterschiedlich“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ANLOGIC_EG4S20BG256_DevBoard_V1.2.pdf
A A A 1 2 KEY3 U U U U U U U U 10k TS-F007 Taster R43 SW4 1 2 1 2 KEY4 10k TS-F007 Taster R44 SW5 1 2 KEY5 1 2 10k TS-F007 Taster M1 1 R45 2 Q1 SI2300DS Q2 SI2300DS Q3 SI2300DS Q4 SI2300DS SW6 KEY6 SPI2_MISO 1L12 SPI2 MISO GND 80 DIGIT
in „Sipeed Lichee Tang FPGA mit RISC-V Core aus China unter 20€“ · FPGA, VHDL & Co. ·
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PDF
EUP3453-EutechMicroelectronics.pdf
Shutdown Current V OVEN = 5V 3 A Quiescent Current V OVEN = 0V, VFB= 1V 0.55 1 mA Soft -Start Period 10 ms Thermal Shutdown 160 °C DS3453 Ver1.2May 2012 4 EUP3453 Typical Operating Characteristics V IN2V, V OUT=5V, C IN0 F×2, C OUT=22 F×2, L1=33 H, T =A5°C, unless otherwise noted. DS3453 Ver1.2 May 2012
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