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PDF
P14067EJ2V0DS00.pdf
0 10 20 30 0 4 1 2 4 6 8 10 14 20 30 Drain CurrentD(mA) Frequency f (GHz) 4 Data Sheet P14067EJ2V0DS00 NE3210S01 S-PARAMETERS MAG. AND ANG. V DS= 2 V, I = 10 mA FREQUENCY S 11 S21 S12 S22 MHz MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG. 2000.0000 0.973 –21.2 4.450 154.2 0.022 75.9 0.550 –15.2 2500.0000 0.951
in „Vorverstärker für magnetische Loop“ · HF, Funk und Felder ·
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PDF
LM78xx__Fixspannungsregler.pdf
Performance Characteristics 8 X X Maximum Average Power Dissipation Maximum Average Power Dissipation DS007746-5 DS007746-6 Peak Output Current Output Voltage (Normalized to 1V at T J 25˚C) DS007746-7 DS007746-8 Ripple Rejection Ripple Rejection DS007746-9 DS007746-10 5 www.national.com X X 7 Typical Performance Characteristics (Continued) M L Output Impedance Dropout Voltage DS007746-11 DS007746-12 Dropout Characteristics Quiescent Current DS007746-13 DS007746-14 Quiescent Current DS007746-15 www.national.com 6 M 7 Physical Dimensions inches (millimeters) unless otherwise noted
in „Spannungsversorgung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
78XX_05_12_15.pdf
Performance Characteristics 8 X X Maximum Average Power Dissipation Maximum Average Power Dissipation DS007746-5 DS007746-6 Peak Output Current Output Voltage (Normalized to 1V at T J 25˚C) DS007746-7 DS007746-8 Ripple Rejection Ripple Rejection DS007746-9 DS007746-10 5 www.national.com X X 7 Typical Performance Characteristics (Continued) M L Output Impedance Dropout Voltage DS007746-11 DS007746-12 Dropout Characteristics Quiescent Current DS007746-13 DS007746-14 Quiescent Current DS007746-15 www.national.com 6 M 7 Physical Dimensions inches (millimeters) unless otherwise noted
in „7812 Spannungsregler nur 5V“ · Analoge Elektronik und Schaltungstechnik ·
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Hoa2498_1.pdf
.150(3.81) 2 PLCS .040(1.02) cleaning agents are methanol and isopropanol. .187(4.75) DIM_039.ds4 Honeywell reserves the right to make changes in order to improve design and © Honeywell Inc. h supply the best products possible. 17 September 1997 HOA2498 Reflective Sensor ELECTRICAL CHARACTERISTICS
in „HOA2498_001 reflective sensor zu verschenken“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Hoa2498_1.pdf
.150(3.81) 2 PLCS .040(1.02) cleaning agents are methanol and isopropanol. .187(4.75) DIM_039.ds4 Honeywell reserves the right to make changes in order to improve design and © Honeywell Inc. h supply the best products possible. 17 September 1997 HOA2498 Reflective Sensor ELECTRICAL CHARACTERISTICS
in „EEproms 24C32 zu verschenken“ · Mikrocontroller und Digitale Elektronik ·
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rt8279.pdf
IN24V V IN36V 450 450 VOUT= 5V, OUT= 0A VOUT = 5V 440 440 4 8 12 16 20 24 28 32 36 -50 -25 0 25 50 75 100 125 Input Voltage (V) Temperature (°C) www.richtek.com DS8279-01 December 2011 6 RT8279 Current Limit vs. Temperature Shutdown Current vs. Input Voltage 12 60 11 50 A ) ( A10 t 40 i e m 9 r L C 30
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ixys_21N100Q.pdf
170 nC Dim. Millimeter Inches Q V = 10 V, V = 0.5 • V , I = 0.5 • I 38 nC Min. Max. Min. Max. gs GS DS DSS D D25 A 4.83 5.21 .190 .205 Q 75 nC gd A1 2.29 2.54 .090 .100 A2 1.91 2.16 .075 .085 R 0.26 K/W b 1.14 1.40 .045 .055 thJC b 1.91 2.13 .075 .084 R 0.15 K/W 1 thCK b2 2.92 3.12 .115 .123 C 0.61 0.80
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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xfft_ds260.pdf
S C N Y B - N XC6VLX240T 6201 4832 6949 33 24 339 15575 45.94 1 256 R2 Y 12 12 S T N Y D - N XC6VLX75T 867 850 817 0 3 450 1652 3.67 M 1 256 R2 Y 12 12 S T N Y B - N XC6VLX75T 664 645 803 3 3 395 1670 4.23 F O 1 256 R2 Y 12 12 B T N Y B - N XC6VLX75T 704 684 806 3 3 395 1670 4.23 DS260 March 1, 2011
in „Implementierung der XILINX FFT-Core“ · FPGA, VHDL & Co. ·
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PDF
VNS1NV04DTR.pdf
Pin Input-Source Clamp IN=1mA 6 6.8 8 V VINCL Voltage IN=-1mA -1.0 -0.3 V Zero Input Voltage DrainDS=13V; VIN0V; Tj25°C 30 A DSS Current IN =0V) VDS=25V; VIN0V 75 A ON Symbol Parameter Test Conditions Min Typ Max Unit R Static Drain-source On VIN=5V; D =0.5A;jT = 25°C 250 m DS(on) Resistance VIN5V;
in „[V] Highside-Schalter“ · Markt ·
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PDF
irfh4210d_pbf.pdf
TOP 10V TOP 10V ) 5.0V 5.0V ( 4.5V A 4.5V t 4.0V t 3.5V r 3.25V e 3.25V u 100 3.0V u 3.0V C BOTTOM 2.75V C BOTTOM 2.75V c e u u00 o o o - - - a 10 i D 2.75V r , , 2.75V ID I 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 150°C 1 Tj = 25°C 10 0.1 1 10 100 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) VDS ,
in „Akkubohrschrauber 10,8V von Makita und Metabo“ · Mechanik, Gehäuse, Werkzeug ·
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PDF
IRF3205Z.pdf
55V ● 175°C Operating Temperature DSS ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax R DS(on) = 6.5mΩ G Description Specifically designed for Automotive applications, D = 75A ® S this HEXFET Power MOSFET utilizes the latest processingtechniquestoachieveextremelylowon- resistance per silicon
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Hilfspannung.pdf
Symbol Condition Min. Typ. Max. Unit Drain-Source Breakdown Voltage BV DSS V GS=0V, ID=50µA 650 - - V V DS=Max., Rating, - - 50 µA Zero Gate Voltage Drain Current I V GS=0V DSS V DS=0.8Max., Rating, V =0V, T =125°C - - 200 µA GS C Static Drain-Source on ResistanceNote) R DS(ON) V GS=10V, ID=0.5A - 8 10 Ω (Note) Forward Transconductance gfs V DS=50V, ID=0.5A 0.5 - - S Input Capacitance Ciss - 250 - V GS=0V, V DS=25V, Output Capacitance Coss - 25 - pF f=1MHz Reverse Transfer Capacitance Crss - 10 - Turn on Delay Time td(on) V DD=0.5B V DSS D
in „unbek. TO220 Bauteil in einem Schaltnetzteil“ · Mikrocontroller und Digitale Elektronik ·
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PDF
FQB34P10.pdf
mΩ n n e l Description Features Q This P-Channel enhancement mode power MOSFET is • -33.5 A, -100 V,DS(on) 60 mΩ (Max.) @ VGS = .10 V, F produced using Fairchild Semiconductor’s proprietary plI = -16.75 A E stripe and DMOS technology. This advanced MOSFET D T® technology has been especially tailored to
in „DC/DC Wandler Vin 15-50V, Vout 12V 9A!“ · Analoge Elektronik und Schaltungstechnik ·
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IRFB3006_IR.pdf
On-Resistance vs. Temperature 16000 VGS = 0V, f = 1 MHZ 16 C = C + C , C SHORTED ID= 170A iss gs gd ds V V = 48V Crss = gd ( DS C = C + C g V DS= 30V )12000 oss ds gd l 12 F o ( C iss e c r n o i 8000 S 8 a t a e C a C G S 4 4000 Coss G V Crss 0 0 0 40 80 120 160 200 240 280 1 10 100 QG Total Gate Charge
in „Motor PWM Steuerung, Mosfet Problem“ · Mikrocontroller und Digitale Elektronik ·
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ssr2n60a.pdf
MOSFET SSR/U2N60A FEATURES BV DSS = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology R DS(on) = 5 Ω Lower Input Capacitance I = 1.8 A Improved Gate Charge D Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current : 25 μA (Max.) @ V DS = 600V Lower R : 3.892 Ω (Typ.) 2 DS(ON) 1 12 3
in „Ersatz für SSR2N60A“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irf840_und_irf840fi.pdf
Voltage V = V I = 250 A 2 3 4 V GS(th) DS GS D R DS(on) Static Drain-source On V GS = 10V D = 4.4 A 0.74 0.85 Resistance ID(on) On State Drain Current V DS> ID(on) R DS(on)maxVGS = 10 V 8 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs(∗) Forward V DS> ID(on) R DS(on)max ID= 4.4 A 4.9 6 S Transconductance Ciss Input Capacitance V DS= 25 V f = 1 MHz V GS= 0 1100 1500 pF Coss Output Capacitance 190 240 pF Crss Reverse Transfer 80 110 pF Capacitance
in „Unterschied zw. IRF840 und IRF840FI“ · Mikrocontroller und Digitale Elektronik ·
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PDF
handbuch_tx-ds575x_manual_e.pdf
ANTENNA DVD IN SAEAKERS OPTICAL 2 L L AM VIDEO 3 NI R R OPTICAL 1 R R Other areas : 9 kHz VIDEO 2 IN 75 NI SPEAKER REMOTECONTROL TOTAL 100W MAX. GND VIDEO 1 OUT FRONT (INAY V MONITOR S SURROUND L AMFSTEPENCY L TOUT SUBWOOFER R L MODEL NTX-DS575X Setting theVoltage selector (Worldwide models R ( )RRC L
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PDF
Littelfuse_Discrete_MOSFETs_N-Channel_Standard_IXT_1N450HV_Datasheet.PDF.pdf
Typ. Max. Easy to Mount J Space Savings V V = V , I = 250A 3.5 6.0 V High Power Density GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS IDSS VDS = 3.6kV, VGS 0V 5 A Applications V DS= 4.5kV 25 μA V = 3.6kV T = 100C 15 μA DS J High Voltage Power Supplies R V = 10V, I = 50mA, Note 1 80 Capacitor Discharge Applications DS(on) GS D Pulse Circuits Laser and X-Ray Generation Systems © 2014 IXYS CORPORATION, All Rights Reserved DS100500D(04/14) IXTT1N450HV IXTH1N450HV Symbol Test Conditions Characteristic Values TO-268HV
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LM317_Datenblatt.pdf
15.25 15.75 E 10.00 10.40 e 2.40 2.70 e1 4.95 5.15 F 0.51 0.60 H1 6.20 6.60 J1 2.40 2.72 L 13.00 14.00 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DS0433 - Rev 22 page 15/34 LM217, LM317 TO-220 (dual
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PDF
MCP320412-bitA-DConverterDatasheet.pdf
) vs. Input Frequency. Distortion (SINAD) vs. Input Signal Level. 2002 Microchip Technology Inc. DS21298C-page 9 MCP3204/3208 Note: Unless otherwise indicated, V = V = 5V, V = 0V, f = 100 ksps, f = 20* f ,T = 25°C. DD REF SS SAMPLE CLK SAMPLE A 12.00 12.0 11.75 11.5 11.50 11.25 11.0 s11.00 s m VDD
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MCP2551.pdf
essential to protect against bus line short-circuit-induced damage. © 2007 Microchip Technology Inc. DS21667E-page 3 MCP2551 TABLE 1-1: MODES OF OPERATION Mode Current at R Pin Resulting Voltage aS Pin s Standby -RS< 10 µA VRS > 0.75 DD Slope-control 10 µA < RS< 200 µA 0.4 VDD< VRS < 0.6 DD High-speed
in „CAN-BUS - Nur empfangen - Was mache ich mit dem TXD Pin am Tranceiver??“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP73811_2.pdf
-40°C e 510 e r 508 a 0.20 +25°C C a 0.15 e 506 e r 504 t 0.10 h p C 502 u 0.05 O 0.00 500 4.50 4.75 5.00 5.25 5.50 5.75 6.00 3.00 3.20 3.40 3.60 3.80 4.00 4.20 Battery Regulation Voltage (V) Supply Voltage (V) FIGURE 2-3: Output Leakage Current FIGURE 2-6: Charge Current (I OUT ) vs. (IDISCHARGE )
in „Hackbarer(?) 21 EUR Quadcopter“ · Mikrocontroller und Digitale Elektronik ·
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MCP_73831.pdf
-40°C e 510 e r 508 a 0.20 +25°C C a 0.15 e 506 e r 504 t 0.10 h p C 502 u 0.05 O 0.00 500 4.50 4.75 5.00 5.25 5.50 5.75 6.00 3.00 3.20 3.40 3.60 3.80 4.00 4.20 Battery Regulation Voltage (V) Supply Voltage (V) FIGURE 2-3: Output Leakage Current FIGURE 2-6: Charge Current (I OUT ) vs. (IDISCHARGE )
in „LiPo-IC MCP73831 kennt keine Ladeschlussspannung“ · Analoge Elektronik und Schaltungstechnik ·
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STP15N80K5.pdf
0.01 0.1 1 10 100 V DS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 ID AM15434v1 (A) 1µs i 10µs 10 raon iaDS 100µs it aR ti ym 1ms eredb Opii 10ms 1 L Tj=150°C Tc=25°C Single pulse 0.1
in „1500V 8A mit MOSFET schalten“ · Analoge Elektronik und Schaltungstechnik ·
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0900766b81417515.pdf
J = 25°C IDSS - - -1.0 μA VDS = -35V, VGS = 0V Gate-Source Leakage IGSS - - ±100 nA VGS = ±20V, V DS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) -1.0 - -3.0 V VDS = V GS, D = -250μA Static Drain-Source On-Resistance R DS (ON) - 30 45 mΩ VGS = -10V, D = -6A 40 65 VGS = -4.5V, D =
in „Datenblatt DMG4511SK4 COMPLEMENTARY PAIR MOSEFT“ · Analoge Elektronik und Schaltungstechnik ·
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73493.pdf
Transconductance gfs V DS= - 15 V,DI = - 20 A 75 S b Dynamic Input Capacitance C iss 11300 Output Capacitance Coss V DS = - 25 V,GS = 0 V, f = 1 MHz 1510 pF Reverse Transfer Capacitance C rss 1000 Q Total Gate Charge g 185 280
in „Messungen mit DMM Dual-Slope Verfahren am PMOS“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MIC94030BM4.PDF
0V, V = 12V 100 pF ISS GS DS IDSS Zero Gate Voltage Drain CurrenV DS= 12V, VGS= 0V 25 A V DS= 12V, VGS= 0V, J = 125°C 0.010 250 A ID(ON) On-State Drain Current V DS= 10V, VGS= 10V, Note 5 6.3 A RDS(ON) Drain-Source On-State Resist. V GS= 10V, D = 100mA 0.45 V GS= 4.5V,DI = 100mA 0.75 1.00 V GS= 2.7V,DI = 100mA 1.20 gFS Forward Transconductance V DS= 10V, D = 200mA, Note 5 480 mS Note 1 T A= 25°C unless noted. Substrate connected to source for all conditions Note 2 ESD gate protection
in „MOSFET ohne Body-Diode“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS75160__161__162_GPIB-Transceiver.pdf
CC e 0V, VI(bus) 0V to 2.5V 40 mA OS Short-Circuit Terminal V Ie 2V, VO e 0V (Note 4) b 15 b 35 b 75 mA Output Current b b b Bus (Note 5) 35 75 150 e e e CC Supply Current DS75160A Transmit, TE 2V, PE 2V, VI 0.8V 85 125 Receive, TE e 0.8V, PE e 2V, V e 0.8V 70 100 I mA DS75161A TE e 0.8V, DC e 0.8V,
in „PM2528 als Scannermultimeter mit GPIB“ · Mikrocontroller und Digitale Elektronik ·
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PDF
stgw60h65dfb.pdf
2.6 GE C =120A 300 2.4 2.2 200 IC=60A 2.0 1.8 100 1.6 IC=30A VGE =15V, TJ=175°C 1.4 0 0 25 50 75 100 125 150 TC(°C) 1.2 -50 0 50 100 150 T (°C) DS9535 - Rev 8 page 5/21 STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Electrical characteristics (curves) Figure 7. V CE(sat) vs collector current Figure
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PDF
EUP3453-EutechMicroelectronics.pdf
mV OVEN Enable Threshold Voltage 0.4 V OVEN Shutdown Threshold Voltage 2 V OCSET Pull Up Current 4.75 5.0 5.25 A Shutdown Current V OVEN = 5V 3 A Quiescent Current V OVEN = 0V, VFB= 1V 0.55 1 mA Soft -Start Period 10 ms Thermal Shutdown 160 °C DS3453 Ver1.2May 2012 4 EUP3453 Typical Operating Characteristics
in „Unbekannter IC aus Ergometer“ · Mikrocontroller und Digitale Elektronik ·
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PDF
mosfet_K3673.pdf
=0V 700 V Gate threshold voltage VGS(th) ID= 250 A VDS=V GS 3.0 5.0 V V DS=700V V GS=0V T c=25°C 25 µA Zero gate voltage drain current IDSS V DS=560V V GS=0V Tch=125°C 250 Gate-source leakage current IGSS V GS=±30V V DS=0V 100 nA Drain-source on-state resistance RDS(on) ID=
in „Mosfet K3673 01“ · Analoge Elektronik und Schaltungstechnik ·
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MRF272L.pdf
otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS Gate Threshold Voltage DS = 10 V, D = 100 mA) VGS(th) 1.5 2.5 4.5 Vdc Drain–Source On–Voltage (VGS = 10 V,DI = 5.0 A) V DS(on) 0.5 0.9 1.5 Vdc Forward Transconductance (VDS = 10 V,DI = 2.5 A) g fs 3.0 3.75 — mhos DYNAMIC CHARACTERISTICS Input Capacitance DS = 28 V, GS = 0, f = 1.0 MHz) Ciss — 135 — pF Output Capacitance (DS = 28 V, GS = 0, f = 1.0 MHz) Coss — 140 — pF Reverse Transfer Capacitance (DS= 28 V, VGS= 0, f = 1.0 MHz) Crss — 17 — pF FUNCTIONAL
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PDF
IRLB8748PBF.PDF
G ID = 50µA I ,) ID = 250µA ( 1.0 ID = 1.0mA 20 S G V 0 0.5 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) TJ, Temperature ( °C ) Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature Case Temperature 10
in „Funktionsprüfung MOSFET IRL B8748PbF“ · Analoge Elektronik und Schaltungstechnik ·
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irsf3010.pdf
ParameterDefinition Min. Typ. Max. Units Test Conditions Vds,clamp Drain to SourceClampVoltage 50 54 — V ds = 10mA — 56 62 ds = 11A, p = 700 S R ds(on) Drain to Source On Resistance — 70 80 Vin= 5V, ds= 4A — 85 — m V = 4V, I = 4A in ds — 53 — Vin= 10V, ds= 4A Idss DraintoSourceLeakageCurrent — — 10 Vds = 12V
in „PIC steuert High Side Switch“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP738312.pdf
= 450 mA h t 4.175 OUT C 97 a 4.170 B 0 0 0 0 0 0 0 0 0 0 0 0 0 96 - - - - 1 2 3 4 5 6 7 8 4.50 4.75 5.00 5.25 5.50 5.75 6.00 Ambient Temperature (°C) Supply Voltage (V) FIGURE 2-2: Battery Regulation Voltage FIGURE 2-5: Charge Current (I OUT ) vs. (V ) vs. Ambient Temperature (T ). Supply Voltage (
in „MCP73832 Beschaltung für die Auswertung mit µC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS100258D_IXTH-TT16N10D2_.pdf
Q - NanoCoulombs DS G Fig. 15. Forward-Bias Safe Operating Area Fig. 16. Forward-Bias Safe Operating Area @ T = 25 C o @ T = 75 C o 1,000 C C 1,000 RDS(on)imit RDS(on)imit 25μs 25μs 100 100μs s 100 r e 100μs e e p 1ms p A m - - 1ms I 10ms D 10 100ms I 10 10ms DC 100ms T = 175 C T = 175 C DC J J TC = 25 C TC= 75 C Single Pulse Single Pulse 1 Fig. 17. Maximum Transient Therm1l Impedance 1 10 100 1 10 100 1.000 V - Volts V - Volts DS DS Fig. 17. Maximum Transient Thermal Impedance hvjv 0.300 0.100 W / - C h0.010
in „Wann sperrt ein selbstleit. N-Kanal MOSFET?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
aod522.pdf
-s S Gf RD 100 0.005 0 0.00 0 10 20 30 40 50 60 70 80 90 0 15 30 45 60 75 90 D - Drain Current (A) D - Drain Current (A) Transconductance R DS(on)vs. Drain Current 2500 10 VDS= 15 V Ciss ) 2000 ( 8 ID= 21.8 A e F a ( o VDS = 24 V c 1500 V 6 n c i u a S a t C 1000 e 4 - a C
in „Suche einfache Möglichkeit 24V 6A DC zu schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RT8298E-02.pdf
i570 w S560 8.5 V IN= 12V, OUT= 3.3V, OUT= 1A VIN= 12V, VOUT= 3.3V 550 8.0 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 Temperature (°C) Temperature (°C) Load Transient Response Output Ripple V OUT (5mV/Div) VOUT (100mV/Div) VSW (10V/Div) IOUT (5A/Div) L (2A/Div) VIN= 12V, OUT = 3.3V
in „Schaltregler - maximaler Spulenstrom“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RT8298E-02.pdf
i570 w S560 8.5 V IN= 12V, OUT= 3.3V, OUT= 1A VIN= 12V, VOUT= 3.3V 550 8.0 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 Temperature (°C) Temperature (°C) Load Transient Response Output Ripple V OUT (5mV/Div) VOUT (100mV/Div) VSW (10V/Div) IOUT (5A/Div) L (2A/Div) VIN= 12V, OUT = 3.3V
in „Wahl des SynchrongleichrichterMOSFETs für Buck Converter“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RT8298E-02.pdf
i570 w S560 8.5 V IN= 12V, OUT= 3.3V, OUT= 1A VIN= 12V, VOUT= 3.3V 550 8.0 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 Temperature (°C) Temperature (°C) Load Transient Response Output Ripple V OUT (5mV/Div) VOUT (100mV/Div) VSW (10V/Div) IOUT (5A/Div) L (2A/Div) VIN= 12V, OUT = 3.3V
in „Woher Eingangsschwingung am Buck“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Richtek-Tech-RT9193-33GB.pdf
-25 0 25 50 75 100 125 Time (500μs/Div) Temperature (°C) Copyrigh©2013 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation. DS9193-16 January 2013 www.richtek.com
in „CH340C bricht Verbindung ab / Reset“ · Mikrocontroller und Digitale Elektronik ·
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PDF
RT9193-33GB.pdf
-25 0 25 50 75 100 125 Time (500μs/Div) Temperature (°C) Copyrigh©2013 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation. DS9193-16 January 2013 www.richtek.com
in „Fragen Stromversorgung / Schaltplan“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
STB10NK60Z.pdf
- TO220/FP-D²/I²PAK-TO-247 Zener-Protected SuperMESH™ MOSFET General features Package Type VDSS R DS(on) D Pw STB10NK60Z 600 V <0.75 Ω 10 A 115 STB10NK60Z-1 600 V <0.75 Ω 10 A 115 23 23 3 STP10NK60ZFP 600 V <0.75 Ω 10 A 35 1 1 12 TO-220 TO-220FP STP10NK60Z 600 V <0.75 Ω 10 A 115 TO-247 STW10NK60Z 600
in „Ersatz für STB10NK60Z“ · Mikrocontroller und Digitale Elektronik ·
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PDF
CS42L51_F3.pdf
i.e. A Output Power = 44 mW into -60 single 16 and 88 mW into -65 stereo 16 with THD+N = - -70 75 dB). -75 -80 -85 -90 -95 -100 0 10m 20m 30m 40m 50m 60m 70m 80m W Figure 28. THD+N vs. Output Power per Channel at 2.5 V (16 load) DS679F3 73 CS42L51 G = 0.6047 VA_HP = VA = 1.8 -20 G = 0.7099 -30
in „STM32H7B3I-DK - Soundausgabe“ · Mikrocontroller und Digitale Elektronik ·
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PDF
CW6626-Datasheet-DS6626V1.1.pdf
Internal OTP ROM power supply. Connect to VDD in application. RF Power Supplies 15 RVDD - NA On-chip 2.75V RVDD LDO output to supply internal RF circuits, this pin output typical voltage is 2.75V. Exposed Pad RVSS - NA Ground connection of on-chip 2.75V RVDD LDO 31 VDDQ I RVDD Digital block of RF circuit
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PDF
MCP1802.pdf
V V 5.98 u -45°C u +90°C t 5.98 t 5.96 O +90°C O 5.96 5.94 5.94 5.92 7 7.5 8 8.5 9 9.5 10 0 25 50 75 100 125 150 Input Voltage (V) Load Current (mA) FIGURE 2-9: Output Voltage vs. Input FIGURE 2-12: Output Voltage vs. Load Voltage. Current. DS22053C-page 6 2010 Microchip Technology Inc. MCP1802 Note
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MCP1801.pdf
°C o V V 5.98 u u t 5.98 t 5.96 u O +90°C O 5.96 +90°C 5.94 5.94 5.92 7 7.5 8 8.5 9 9.5 10 0 25 50 75 100 125 150 Input Voltage (V) Load Current (mA) FIGURE 2-9: Output Voltage vs. Input FIGURE 2-12: Output Voltage vs. Load Voltage. Current. DS22051D-page 6 2010 Microchip Technology Inc. MCP1801 Note
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SW6007.pdf
On Flicker 50~75% On On Flicker Off 25~50% On Flicker Off Off 0~25% Flicker Off Off Off Mode: iSW_Release_DS066_v1.0 www.ismartware.com 第 13 页 共 19 页 珠海智融科技有限公司 ZHUHAI ISMARTWARE TECHNOLOGY CO., LTD. 3灯状态下的连接方式 : 3灯放电状态下的指示表
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MOSFET.pdf
Normalized On-Resistance vs. Temperature 35000 V = 0V, f = 100 kHz 16 GS ID= 180A C iss= Cgs+ Cgd C dsSHORTED V V = 80V 30000 C rss= Cgd ( DS C = C + C g V DS = 50V ) oss ds gd l 12 V = 20V F 25000 o DS ( Ciss e c r n 20000 o i - 8 a t a 15000 e C a C G 10000 ,S 4 Coss G V 5000 Crss 0 0 0 50 100 150 200
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BTS141_DS_14.pdf
t S 40 t D P 100 R max. 30 80 typ. 60 20 40 10 20 0 0 0 20 40 60 80 100 120 °C 160 -50 -25 0 25 50 75 100 °C 150 150 T j On-state resistance Typ. input threshold voltage R ON = f(T j; I D 12A; V IN =5V V IN(th) = f(T )j I D2,7mA; V DS =12V 70 2.0 V Ω 1.6 n 50 ) ( ( 1.4 D I R V 1.2 40 max. typ. 1.0 30
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