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PDF
EUP3453-EutechMicroelectronics.pdf
Shutdown Current V OVEN = 5V 3 A Quiescent Current V OVEN = 0V, VFB= 1V 0.55 1 mA Soft -Start Period 10 ms Thermal Shutdown 160 °C DS3453 Ver1.2May 2012 4 EUP3453 Typical Operating Characteristics V IN2V, V OUT=5V, C IN0 F×2, C OUT=22 F×2, L1=33 H, T =A5°C, unless otherwise noted. DS3453 Ver1.2 May 2012
in „Unbekannter IC aus Ergometer“ · Mikrocontroller und Digitale Elektronik ·
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PDF
xfft_ds260.pdf
by a total of 8 bits which gives a scaling factor of 1/256. The conservative schedule SCALE_SCH = [10 10 10 10 11] completely avoids overflows in the Radix-4, Burst I/O architecture. For the Radix-2, Burst I/O and Radix-2 Lite, DS260 March 1, 2011 www.xilinx.com 23 Product Specification LogiCORE IP Fast
in „Implementierung der XILINX FFT-Core“ · FPGA, VHDL & Co. ·
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PDF
CW6626-Datasheet-DS6626V1.1.pdf
.................................................................................................. 10 2.1. Bluetooth Radio Transceiver ................................................................................................. 10 2.1.1. Transmitter Path..........................................
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Datei
AQ_Rly_Dm_lcd_lan_1_wire_18_11_12.ino
; return; } Serial.println(); // the first ROM byte indicates which chip switch (addr[0]) { case 0x10: Serial.println(" Chip = DS18S20"); // or old DS1820 type_s = 1; break; case 0x28: Serial.println(" Chip = DS18B20"); type_s = 0; break; case 0x22: Serial.println(" Chip = DS1822"); type_s = 0; break
in „Aquariumcontroller: hängt sich auf / stürzt ab / friert ein - Hilfe!“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AP5724_Backlightdriver.pdf
g o 0.1 l 0.1 k o c0.09 k 0.09 b c e0.08 b 0.08 e e F0.07 F 0.07 0.06 0.06 2.5 3 3.5 4 4.5 5 5.5 0 10 20 30 40 50 VIN(V) IOUT (mA) AP5724 4 of 15 December 2013 Document number: DS31843 Rev. 4 - 2 www.diodes.com © Diodes Incorporated AP5724 Typical Performance Characteristics (cont.) (6 LEDS, VIN = 3.6V
in „Fehlersuche Backlightdriver startet nicht“ · Mikrocontroller und Digitale Elektronik ·
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Datei
OneWire.c
valid! Halt.\r\n"); while(1); } // the first ROM byte indicates which chip switch (addr[0]) { case 0x10: printf("Chip = DS18S20"); // or old DS1820 type_s = 1; break; case 0x28: printf("Chip = DS18B20"); type_s = 0; break; case 0x22: printf("Chip = DS1822"); type_s = 0; break; default: { printf("Device
in „Böses One-Wire device“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Mikrocontroller-PIC18F2420.pdf
Timer Prescaler (1, 4, 16) 16 4 1 1 1 1 PR2 Value FFh FFh FFh 3Fh 1Fh 17h Maximum Resolution (bits) 10 10 10 8 7 6.58 DS39631E-page 150 © 2008 Microchip Technology Inc. PIC18F2420/2520/4420/4520 FIGURE 16-2: PWM OUTPUT RELATIONSHIPS (ACTIVE-HIGH STATE) 0 SIGNAL Duty PR2 + 1 CCP1CON<7:6> Cycle Period (
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PDF
bluenrg-2.pdf
Field name Reset RW Description Configure the drive strength during low power modes for the IO9, IO10 and IO11. 0: low drive strength. 1: high drive strength 2:0 SLEEPIO_DS 0x00 RW One bit by IO: Bit0: IO9 Bit1: IO10 Bit2: IO1 31:4 RESERVED 0x00 RW RESERVED Table 10. SYSTEM_CTRL - SLEEPIO_PE register
in „DC/DC-Wandler im ST BlueNRG-2 - Wofür?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AQ_Rly_Dm_lcd_lan_1_wire_18_11_12.pdf
; return; } Serial.println(); // the first ROM byte indicates which chip switch (addr[0]) { case 0x10: Serial.println(" Chip = DS18S20"); // or old DS1820 type_s = 1; break; case 0x28: Serial.println(" Chip = DS18B20"); type_s = 0; break; Seite 5 AQ_Rly_Dm_lcd_lan_1_wire_18_11_12.txt case 0x22: Serial.println(" Chip = DS1822"); type_s = 0; break; default: Serial.println("Device is not a DS18x20 family device."); return; } ds.reset(); ds.select(addr); ds.write(0x44,1); // start conversion, with parasite power on at the
in „Aquariumcontroller: hängt sich auf / stürzt ab / friert ein - Hilfe!“ · Mikrocontroller und Digitale Elektronik ·
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PDF
APT34F100B2_L_D-1593638.pdf
rss 0 10 0 5 10 15 20 25 0 200 400 600 800 1000 I , DRAIN CURRENT (A) V , DRAIN-TO-SOURCE VOLTAGE (V) D DS Figure 5, Gain vs Drain Current Figure 6, Capacitance vs Drain-to-Source Voltage 16 140 D = 18A ) ( 14
in „SMA SB4200TL-MS Reparatur“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
Bootloader230.a51
EQU BootloaderStart + 0x0800 BootloaderCfg EQU ROM_CFG_ADDR - 8 dseg at 0x08 ;overlay data RAM_08: ds 1 RAM_09: ds 1 RAM_0A: ds 3 RAM_0D: ds 3 ; ptr memcpy source RAM_10: ds 1 ; memcpy size RAM_11: ds 4 ; for init key bseg at 0 bWrProtect: DBIT 1 ; 1 disables CodeFlash writing bSoftReset: DBIT 1 ; 1
in „uC für 0,20€ CH552 / CH554 von WCH Billig Micro mit USB Funktion, Chip vorstellung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
604551.pdf
DS 75 DSI 75 DSA 75 DSAI 75 Rectifier Diode V RRM = 800-1800 V Avalanche Diode IF(RMS) = 160 A I = 110 A F(AV)M DO-203 AB VRSM V(BR)min V RRM Anode Cathode V V V on stud on stud C A DS DSI 900 - 800 DS75
in „Kühlkörper für Gleichrichterdiode“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
3703fc.pdf
3703 G08 3703 G09 Driver Peak Source Current vs Driver Pull-Down R vs Driver Peak Source Current vs DS(ON) Temperature Temperature Supply Voltage 3.0 3.0 1.6 2.8 VCC= 10V VCC = 10V 1.4 2.5 ) 2.6 A ( 1.2 T N 2.4 N R ) 1.0 R 2.0 U 2.2 ( U C 2.0 N C C S0.8 C 1.5 U 1.8 D U O R 0.6 S K 1.6 K 1.0 E 0.4 E P
in „Längs- oder Querregler 40V 250W als Überspannungsschutz für Tiefstellsetzer“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
main.c
led1_init; init_timer_smh(); lcd_init(); lcd_int2(hou);lw(":"); lcd_int2(min);lw(":"); //init_ADC(); ds1820_init(); #if _I2C_kk_funktionen_h ds1307gefunden = i2c_start(0xd0); //0b11010000 - 188?? if (ds1307gefunden==0)kk_ds1307_getAll_to_global_struct_zt(); #endif lcd_clear(0); led1_off; bba_status=(1<<bba_status_kneten); DDRB|=(1<<4); PORTB&=~(1<<4); DDRC|=knet; PORTC&=~knet; lcd_goto(2,10);lcd_write("kneten"); temp=ds1820_ein_Sensor_messen(); //testen #if 0 back_timer=118; bba_status=(1<<bba_status_backen); sec=58; #endif while(1){ //------------------------------------------------ if
in „Brotbackautomat Steuerplatine defekt“ · Haus & Smart Home ·
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Datei
Taupunkt_V1_V2_THD_DS18B_3ok.ino
TD(relHum,Temp) = b*v/(a-v) mit v(relHum,Temp) = log10(DD(relHum,Temp)/6.1078) 5-Aus der allgemeinen Gasgleichung ergibt sich: AF(relHum,TK) = 10^5 * mw/R* * DD(relHum,Temp)/TK; AF(TD,TK) = 10^5 * mw/R* * SDD(TD)/TK Anmerkungdes Verfassers (Stefan Ochs):
in „Taupunktberechnung mit Arduino, DHT22, DS18B20“ · Projekte & Code ·
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Datei
ds1307.c
Monat twi_writedata(1); //Jahr twi_writedata(0x11);//Control twi_stop(); twi_start(); twi_writeadr(DS1307ADR,TW_WRITE); twi_writedata(0); twi_writedata(1); twi_stop(); sei(); while(1); } void ds1307_gettime(void) { uint8_t seconds,minutes,hours; seconds = ds1307_readreg(0); minutes = ds1307_readreg(1
in „Real-Time Clock (ds1307)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM3647-1.pdf
have a nominal voltage of 3.6V or 3.7V and the maximum voltage per cell is specified at 4.1V or 4.2V DS101318-10 respectively. By multiplying the number of battery cells with the maximum cell voltage, it is possible to determine the Resistor network selection Quick Guide: Maximum Voltage of the Battery
in „Heizungssteuerung mit Funk-Temperaturfühler“ · Mikrocontroller und Digitale Elektronik ·
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PDF
4620.pdf
when PORTE is implemented (i.e., 40/44-pin devices). 2004 Microchip Technology Inc. Preliminary DS39626B-page 119 PIC18F2525/2620/4525/4620 10.6 Parallel Slave Port The timing for the control signals in Write and Read modes is shown in Figure 10-3 and Figure 10-4, Note: The Parallel Slave Port is
in „SPI master/slave - schreib/lese befehle ?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
bootloader.a51
; overlay area $nomod51 $include (ch552_keil.h) dseg at 0x08 ;these is overlay data RAM_08: ds 1 RAM_09: ds 1 RAM_0A: ds 1 RAM_0B: ds 1 RAM_0C: ds 1 ; ptr memcpy source RAM_0D: ds 1 RAM_0E: ds 1 RAM_0F: ds 1 ; memcpy size RAM_10: ds 1 RAM_11: ds 4; bseg at 0 bit00: DBIT 1 ; ????? bSoftReset: DBIT
in „uC für 0,20€ CH552 / CH554 von WCH Billig Micro mit USB Funktion, Chip vorstellung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
datasheet.pdf
blinded” by strong noise pulses, which Receiver Event Timing can cause burst data errors. Note that DS1 is active when DS2 is used, as RXDATA is the logical AND of the DS1 and DS2 outputs. Receiver event timing is summarized in Table 1. Please refer to this DS2 can be disabled by leaving THLD2 disconnected
in „OPV mit niedriger Eingangskapazität“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
NVMFS4C03N.pdf
Power, Single N-Channel, Logic Level, SO-8FL 30 V, 1.7 mW, 159 A www.onsemi.com Features V (BR)DSS R DS(on)AX D MAX • Small Footprint (5x6 mm) for Compact Design • Low R DS(on)to Minimize Conduction Losses 1.7 mW @ 10 V 30 V 159 A • Low Q Gnd Capacitance to Minimize Driver Losses 2.4 mW @ 4.5 V • NVMFS4C03NWF
in „Wahl des SynchrongleichrichterMOSFETs für Buck Converter“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
40171a.pdf
+TestCount; return; } else return; } while(TestCount++ < 5) //Delay 1997 Microchip Technology Inc. DS40171A-page 13 PICREF-4 return; while(TestCount++ < 10) //Turn off for a short period { PercentOn = Maxdim; return; } while(TestCount++ < 15) //Turn On for a short period { PercentOn = Maxbrt; return;
in „Dimm-IC (230V) für Arduino gesucht“ · Haus & Smart Home ·
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PDF
MIC5239_Data.pdf
Current IGND(SHDN) — 0.1 1 µA VEN≤ 0.6V, IN= 30V Short-Circuit Current ISC — 850 1200 mA VOUT = 0V 10 Hz to 100 kHz, V = 3.0V, Output Noise en — 160 — µVRMS OUT CL= 3.3 µF 2021 Microchip Technology Inc. DS20006544A-page 3 MIC5239 ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical CharacteristicsIN=
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PDF
XLamp7090XR-E.pdf
and XLamp are registered trademarks of Cree, Inc. Durham, NC 27703ive USA Tel: +1.919.313.5300 5 CLD-DS05.011 www.cree.com/xlamp Relative Flux vs. Junction Temperature (I = 350 mA) F 100% 90% u 80% F s 70% u o 60% i m 50% White u L 40% Blue e Green t 30% a e 20% R 10% 0% 25 50 75 100 125 150 Junction Temperature
in „LiPo Zelle Impulsbelastung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Si4838DY.pdf
Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V DS 12 Gate-Source Voltage V ± 8 V GS TA= 25 °C 25 17 Continuous Drain Current JT = 150 °C) ID TA= 70 °C 20 13 A Pulsed Drain Current (10 µs Pulse Width) DM
in „Verpolungsschutz Mosfet dimensionieren“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
CAN_Bit_Timing.pdf
(NBT), tbit TQ = tPROP / 6 = 125 ns t = 10TQ = 1.25 µs → 800 kb/s bit SyncSeg = 1TQ PropSeg = tPROP = 6TQ PS1 = 1TQ PS2 = 2TQ SJW MAX = 1TQ REFERENCES CONCLUSION MCP2510 Data Sheet, DS21291, Microchip Technol- Setting up CAN bit timing is not
in „Infos zum CAN Bit-Timing gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
P2804BDG.pdf
Voltage V (BR)DSS V = 0V, I = 250µA 40 GS D V Gate Threshold Voltage VGS(th) V = V , I = 250µA 1 1.5 2.5 DS GS D Gate-Body Leakage IGSS VDS = 0V, GS= ±20V ±250 nA V DS= 32V, VGS= 0V 1 Zero Gate Voltage Drain Current IDSS µA VDS= 30V, VGS= 0V, TC= 125 °C 10 On-State Drain Current ID(ON) VDS = 10V, GS = 10V
in „Suche Ersatz für SMD Sicherung K“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AL5802-DIO.pdf
vs. V Fig. 9 Output Coutent vs. V Fig. 10 Output biasent vs. V Note:10.out the “Outpoutcurrent Vs V ”graphs limited by power dissipation in the device. 5 of 11 March 2014 Document number: DS35516 Rev. 9 - 2w.diodes.com © Diodes Incorporated
in „Dimensionierung von LED-Dimm-Schaltung“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
ds18b20.bas
Read_ds18b20_id Do For I = 1 To Max_num_ds18b20 Print "Anzahl DS18B20: "; Max_num_ds18b20 Print "ID: " ; Hex(ds18b20_id(i)) Call Measure_ds18b20(i) Waitms 800 Ds18b20tempstr = Str(read_ds18b20(i)) Print "Temperatur
in „Probleme mit Temperatursensor DS18B20“ · Mikrocontroller und Digitale Elektronik ·
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Datei
main.c
? if ( auslesen == 1 ) { // (erste) ID ins RAM holen memcpy_P(tempID,DS18B20IDs[0],OW_ROMCODE_SIZE); while ( tempID[0] != 0 ) { //while ( tempID[0] == 0x10 ) { // RoBue Anmerkung: // Hiermit wird jeweils ein einzelner Sensor ausgelesen // und die Temperatur in ow_array abgelegt
in „AVR für wenig Geld im LAN“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BSS84.pdf
junction temperature −65 +150 °C [1] Device mounted on a Printed-Circuit Board (PCB). −103 mld251 p = 10 s ID (1) 100 s (mA) 1 ms −102 10 ms DC 100 ms −10 −1 2 −1 −10 V (V) −10 DS Tsp= 25 °C (1) DSonlimitation Fig 1. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
in „Batterie von ADC-Eingang des uC trennen (low power)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AP9101C.pdf
S1: Connect over current load 2: t SHORT S2: Connect short current load 10 of 26 AP9101C www.diodes.com © Diodes Incorporated Document number: DS37771 Rev. 7 - 2 AP9101C Time Chart(Cont.) (3Charge Overcurrent Detection VCU VCL VDD VDU VDL VSS VDD DO VSS VDD CO VM VDD VM VSS
in „LiPo Tiefentladeschutz 1S/Einzel-Zellen "Mini/Nano"“ · Platinen ·
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PDF
Installation_Xilinx_ISE_14.7_und_ModelSim_PE_Student_Edition_10.4_auf_Windows_10.pdf
Die Warnungen stören nicht. Die generierten Dateien liegen im folgenden Pfad: > C:\Xilinx\14.7\ISE_DS\ISE\vhdl\mti_pe\10.4a\nt Der Protokollauszug enthält u.a. den Text: WARNING:Compxlib:312 - Output directory 'C:\Xilinx\14.7\ISE_DS\ISE\vhdl\mti_pe\10.4a\nt' does not exist, it will be created. Directory
in „Installation Xilinx ISE 14.7 und ModelSim PE Student Edition 10.4 auf Windows 10“ · FPGA, VHDL & Co. ·
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PDF
div_gen_ds530.pdf
X-Ref Target - Figure 3 CLK DIVIDE_BY_ZERO SCLR CE RFD ND RDY DIVIDEND QUOTIENT DIVISOR FRACTIONAL ds530_03_112707 Figure 3: High Radix Schematic Symbol 10 www.xilinx.com DS530 March 1, 2011 Product Specification LogiCORE IP Divider Generator v3.0 Table 7: High Radix Solution Pinout Signal Direction
in „Xilinx CoreGen: Divider, erkennen wenn der fertig ist“ · FPGA, VHDL & Co. ·
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PDF
P-MOSFETsi3445dv.pdf
V DS= - 10 V,DI = - 5.6 A 15 S a V I = - 1.7 A, V = 0 V Diode Forward Voltage SD S GS - 0.7 - 1.2 V b Dynamic Total Gate Charge Q g 15 25 Gate-Source Charge Qgs V DS= - 4 V, GS = - 4.5 VD I = - 5.6 A 3 nC
in „richtiger n-Kanal MOSFET, 3,3V soll 5V und 100mA schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2304140030_QX-Micro-Devices-QX2304L30T_C219035.pdf
package dimensions: 10 of 14 QX2304_DS03CN Quancore Electronics Technology (Shenzhen) Co., Ltd. www.qxmd.com.cn Machine Translated by Google QX2304 High-efficiency PFM synchronous boost DC/DC converter SOT23-5 package dimension
in „IC (SOT23-3?) aus Christbaumkerze identifizieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlml2502.pdf
nA V = 12V GS Qg Total Gate Charge ––– 8.0 12 D = 4.0A Q Gate-to-Source Charge ––– 1.8 2.7 nC V = 10V gs DS Qgd Gate-to-Drain ("Miller") Charge ––– 1.7 2.6 VGS= 5.0V t Turn-On Delay Time ––– 7.5 ––– V = 10V d(on) DD tr Rise Time ––– 10 ––– ID= 1.0A ns d(off) Turn-Off Delay Time ––– 54 ––– RG= 6Ω f Fall
in „suche Transistor 5V 2A“ · Analoge Elektronik und Schaltungstechnik ·
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Bild
Oszilloskop-Screenshot eines Sägezahnsignals
RIGOL STOP H 2.00us 500Ms/s 12.0k pts D 0.00000000ps T 360mV Period Freq Rise Time Fall Time +Width -Width Freq=159kHz 1 2.00 V 2 1.00 V 3 200mV 4 1.00 V 3 159.712kHz Auslösen Rand Quelle CH3 Flanke Modus Einzel Einstellen
in „Signalverlauf DG1022Z wird falsch dargestellt, Daten,- Dateiformat?“ · Analoge Elektronik und Schaltungstechnik · · Oszi-Bilder
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Bild
Oszilloskop-Messung zweier Signale
RIGOL WAIT H 20.0ns 500MSa/s 120k pts D 0.00000000ps T 6.40 V Horizontal Period Freq Rise Time Fall Time +Width -Width Coupling CH1 DC BW Limit OFF Probe 10X Invert OFF Volts/Div Coarse Unit [V] 1 20.0V 2 10.0V 3 5.00V 4 50.0mV Freq=50.0MHz Vpp=10.6V Min=0.00V Max=10.6V Freq=49.0MHz
in „Probleme mit Spannungsversorgung beim Schalten eines Motors“ · Analoge Elektronik und Schaltungstechnik · · Oszi-Bilder
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PDF
DW01A-DS-10_EN.pdf
DW01Aheetn OneSCrieOLithium-ion/Polymer Battery Protection IC Foeec Pefr oR F RDW01A-DJUN 2009 DW01A Fax：886-2-280948742i County 251, Taiwan www.ic-fortune.com ’ s nl SC re eO F pe n Pr fee Re product.ion as a result of the use of this product. No rights under any patent accompany the sale of ther Rev. 1.0 2/14 DW01A 1. General Description 3. Ordering Information degradingitheumlifetimeydue btoterovercharge,ge PACKAGE TYPE The ultra-small package and less required extern-40°C~+85°C RANGE for Green-Package) ±50mV overcharging detection voltage ensures saf4.3V± 50mV PROTECTION storage.drains little
in „LiFePo Balancer: CF-4S30A-A“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DW01-G-DS-10_EN.pdf
RDW01-G-JUN 2009 DW01-Geetn OneSCrie Lithium-ion/Polymer Battery Protection IC Foeec Pefr oR F DW01-G Fax：886-2-280948742i County 251, Taiwan www.ic-fortune.com ’ s nl SC re eO F pe n Pr fee Re product.ion as a result of the use of this product. No rights under any patent accompany the sale of ther Rev. 1.0 2/14 DW01-G 1. General Description 3. Ordering Information degradingtheiulifetimedueertoaovercharge,daPACKAGE TYPE The ultra-small package and less required e-40°C~+85°C RANGE for Green-Package) ±50mV overcharging detection voltage ensure4.25V± 50mVPROTECTION storage.drains little current from
in „Hackbarer(?) 21 EUR Quadcopter“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DW01A-DS-10_EN.pdf
DW01Aheetn OneSCrieOLithium-ion/Polymer Battery Protection IC Foeec Pefr oR F RDW01A-DJUN 2009 DW01A Fax：886-2-280948742i County 251, Taiwan www.ic-fortune.com ’ s nl SC re eO F pe n Pr fee Re product.ion as a result of the use of this product. No rights under any patent accompany the sale of ther Rev. 1.0 2/14 DW01A 1. General Description 3. Ordering Information degradingitheumlifetimeydue btoterovercharge,ge PACKAGE TYPE The ultra-small package and less required extern-40°C~+85°C RANGE for Green-Package) ±50mV overcharging detection voltage ensures saf4.3V± 50mV PROTECTION storage.drains little
in „Laderegler Li-Ion 3s“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
STP16NF_--_156110-da-01-en-PWRMOS_60V_16A_STP16NF06L_STM.pdf
Max. Unit V (BR)DSS Drain-source ID= 250 µA, GS = 0 60 V Breakdown Voltage IDSS Zero Gate Voltage V DS= Max Rating 1 µA Drain Current GS = 0) V DS= Max Rating TC= 125°C 10 µA Gate-body Leakage V GS= ± 16V ±100 nA IGSS Current (V = 0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage V DS= VGS D = 250 µA 1 2.5 V RDS(on) Static Drain-source On V GS= 5 V D = 8 A 0.08 0.10 Ω Resistance V GS= 10 V D = 8 A 0.07 0.09 Ω DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (*) Forward
in „Fragen zu Vorwiderständen (?) und MOSFET-Auswahl bei 12V-Steuerung am Raspberry Pi“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TXSTM-POWERMOSFET-STX-16NF06L_EN.pdf
Max. Unit V (BR)DSS Drain-source ID= 250 µA, GS = 0 60 V Breakdown Voltage IDSS Zero Gate Voltage V DS= Max Rating 1 µA Drain Current GS = 0) V DS= Max Rating TC= 125°C 10 µA Gate-body Leakage V GS= ± 16V ±100 nA IGSS Current (V = 0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(th) Gate Threshold Voltage V DS= VGS D = 250 µA 1 2.5 V RDS(on) Static Drain-source On V GS= 5 V D = 8 A 0.08 0.10 Ω Resistance V GS= 10 V D = 8 A 0.07 0.09 Ω DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit g (*) Forward
in „TLC5940 (Arduino Mega) flackert. Wie Kondensatoren einsetzen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF540-VIS.PDF
Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available R (Ω) V = 10 V 0.077 Repetitive Avalanche Rated DS(on) GS 175 °C Operating Temperature RoHS* Qg(Max.) (nC) 72 COMPLIANT Fast Switching Qgs(nC) 11 Qgd(nC) 32 Ease of Paralleling Simple Drive Requirements Configuration
in „MOSFET für eine Stromgesteuerte Stromquelle“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
ds18b20.h
****************************************************************************************/ #ifndef _DS18B20_H_ #define _DS18B20_H_ /* Includes ------------------------------------------------------------------*/ #include "stm32f10x_lib.h" #ifndef _DS18B20_LOCAL #define DS18B20_EXTERN extern #else #define DS18B20_EXTERN #endif #define DS18B20_BIT GPIO_Pin_0 #define DS18B20_PORT GPIOC #define READ_DS18B20() GPIO_ReadInputDataBit(DS18B20_PORT, DS18B20_BIT) //ÐèÒªÐÞžÄÏà¹ØÖµ #define DIR_1WIRE_IN() {DS18B20_PORT
in „STM32 DS1820“ · Mikrocontroller und Digitale Elektronik ·
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PDF
J-FET_J112.PDF
40 40 40 V G DS (BR)GSS Gate-source cut-off voltage V = 5 V; I = 1 A −V min. 3 1 0.5 V DS D GS off max. 10 5 3 V Drain-source on-state resistance V = 0.1 V; V = 0 R max. 30 50 100 DS GS DSon July 1993 3 Philips Semiconductors
in „J-FET J112 als Konstantstromquelle: Wie berechnen?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS1000Z_Firmware_Release_Notes-7.pdf
Instrument Firmware Release Notes Models DS1054Z, DS1074Z, DS1104Z, DS1054Z-S, DS1074Z-S, DS1104Z-S, MSO1074Z, MSO1104Z, MSO1074Z-S, MSO1104Z-S Version Information Released version: 00.04.03.02.03 Release Date: 10/20/2015 Compatibility Compatible
in „Rigol-DS1054Z“ · Mikrocontroller und Digitale Elektronik ·
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PDF
l6203.pdf
volt- age-current waveforms and in the driving mode. (see Fig. 7ab and Fig. 8abc). Ptrans. IDS (t) •DS (t) 10/20 L6201 - L6202 - L6203 Boostrap Capacitors APPLICATION INFORMATION To ensurethat the POWER DMOS transistorsare Recirculation driven correctly gate to source voltage of typ. 10 During recirculation
in „L6203 und 100% Einschaltdauer“ · Mikrocontroller und Digitale Elektronik ·
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PDF
L6203.pdf
volt- age-current waveforms and in the driving mode. (see Fig. 7ab and Fig. 8abc). Ptrans. IDS (t) •DS (t) 10/20 L6201 - L6202 - L6203 Boostrap Capacitors APPLICATION INFORMATION To ensurethat the POWER DMOS transistorsare Recirculation driven correctly gate to source voltage of typ. 10 During recirculation
in „Eingangsfrequenz Vollbrückentreiber L6203“ · Mikrocontroller und Digitale Elektronik ·
