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L6202_L6203_STM.pdf
volt- age-current waveforms and in the driving mode. (see Fig. 7ab and Fig. 8abc). Ptrans. IDS (t) •DS (t) 10/20 L6201 - L6202 - L6203 Boostrap Capacitors APPLICATION INFORMATION To ensurethat the POWER DMOS transistorsare Recirculation driven correctly gate to source voltage of typ. 10 During recirculation
in „L6203 DMOS Full Bridge Driver testen“ · Analoge Elektronik und Schaltungstechnik ·
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2n3958.pdf
Symbol Test Conditions Min Typ a Max Unit Static Gate-Source Breakdown Voltage V(BR)GSS G = –1 mA, DS = 0 V –50 –57 V Gate-Source Cutoff Voltage VGS(off) VDS = 20 V,DI = 1 nA –1.0 –2 –4.5 Saturation Drain Current DSS VDS= 20 V, GS = 0 V 0.5 3 5 mA VGS = –30 V, DS= 0 V –10 –100 pA Gate Reverse Current
in „JFET prüfen mit transistortester“ · Analoge Elektronik und Schaltungstechnik ·
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2n3958.pdf
Symbol Test Conditions Min Typ a Max Unit Static Gate-Source Breakdown Voltage V(BR)GSS G = –1 mA, DS = 0 V –50 –57 V Gate-Source Cutoff Voltage VGS(off) VDS = 20 V,DI = 1 nA –1.0 –2 –4.5 Saturation Drain Current DSS VDS= 20 V, GS = 0 V 0.5 3 5 mA VGS = –30 V, DS= 0 V –10 –100 pA Gate Reverse Current
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OV528_DS_1.3.pdf
(18 pins) Pin # Name I/O Function 1, 10, 18, 26, 35, DVDD Digital 3.3V power 50, 60 7, 40 CVDD Digital 2.5V power 13, 23, 31, 37, 46, DVSS Digital ground 57, 63 5, 42 CVSS Digital ground OV528 Datasheet Doc #DS201 © OmniVision Technologies
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Infineon-IPD025N06N-DS-v02_05-EN.pdf
according to IEC61249-2-21 Table 1 Key Performance Parameters Drain Parameter Value Unit Pin 2, Tab V DS 60 V R DS(on),max 2.5 m Gate Pin 1 ID 90 A Source Pin 3 Q OSS 81 nC Q G0V..10V) 71 nC Type / Ordering Code Package Marking Related Links IPD025N06N PG-TO252-3 025N06N - 1) J-STD20 and JESD22 Final Data
in „N-Channel Mosfet gesucht - IPD025N06N“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
ds18b20.h
****************************************************************************************/ #ifndef _DS18B20_H_ #define _DS18B20_H_ /* Includes ------------------------------------------------------------------*/ #include "stm32f10x_lib.h" /* #define DS18B20_BIT GPIO_Pin_0 #define DS18B20_PORT GPIOC #define READ_DS18B20() GPIO_ReadInputDataBit(GPIOB, DS18B20_BIT) #define DIR_1WIRE_IN() {DS18B20_PORT->CRL &= 0xFF0FFFFF;DS18B20_PORT->CRL |= 0x00400000;} #define DIR_1WIRE_OUT() {DS18B20_PORT->CRL &= 0xFF0FFFFF;DS18B20
in „STM32 DS1820“ · Mikrocontroller und Digitale Elektronik ·
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ds2482.c
); // read rom for(i=0;i<8;i++) *data++=ds2482_bread(); } void ds2482_readtag(char* data) { char i; ds2482_bwrite(0xcc); // skip rom ds2482_bwrite(0xf0); // read memory ds2482_bwrite(0); // von Anfang an for(i=0;i<18;i++) *data++=ds2482_bread
in „Mehrere UARTs auf eine Schnittstelle“ · Mikrocontroller und Digitale Elektronik ·
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ATmega1284P_128KByte.pdf
...........................................666............................... 37.9 Rev. 8272A - 01/10......................................................667............................... 2020 Microchip Technology Inc. Data Sheet Complete DS40002070B-page 10 ATmega164A/PA/324A/PA/644A/PA/1284/P 1
in „ATmega1284P versus ohne P“ · Mikrocontroller und Digitale Elektronik ·
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0754-200.pdf
ferrous flux concentrator within the current sensor package. I (%) Primary Current 90 Transducer Output 10 t Rise Time,rt 7 115NortheastCutoff,Box15036 ACS754200-DS, Rev. 3 Worcester,Massachusetts01615-0036 (508)853-5000 Current Sensor: ACS754SCB-200 Standards and Physical Specifications Parameter Specification
in „Strom 10A bis 300A messen mit Tiny26“ · Mikrocontroller und Digitale Elektronik ·
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sia817edj_MOSFET_SCHOTTKY.pdf
GSS V DS = 0 V, GS = ± 12 V ± 10 µA V DS = - 30 V,GS = 0 V - 1 Zero Gate Voltage Drain Current DSS V = - 30 V, V = 0 V, T = 55 °C DS GS J - 10 On-State Drain Currenta ID(on) VDS 5 V, GS = - 10 V - 8 A V = -
in „Korrekte LIPO-Ladeschaltung?“ · Mikrocontroller und Digitale Elektronik ·
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top2008.pdf
PIC16LF724, PIC16LF727, ____MPU-MICON MDT2005, MDT2005E, MDT2010, MDT2010E, MDT2015, MDT2020, MDT2020B, MDT10P21A1P, MDT10P21A1S, MDT10P21A2K, MDT10P21A3S, MDT10P22A1P, MDT10P22A1S, MDT10P22A2K, MDT10P22A3S, MDT2051, ____MPU-ELAN EM78P156E, EM78P256E, EM78P456E, EM78P247SA, EM78P247SB, EM78P447SA, EM78P447SB
in „[V] Top 853 Universal Programmer + 74er Tester“ · Markt ·
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RT9080-33GJ5_esp32_8622_low_quiescent_600mA.pdf
r u u 400 C 200 C D D 300 G 150 N G 200 100 100 50 VIN= 2.2V, OUT= 0.8V VIN= 4.3V, OUT= 3.3V 0 0 1 10 100 1000 1 10 100 1000 Load Current (mA) Load Current (mA) Copyrigh©2017 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation. DS9080-05 June
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Datei
OneWire.asm
******************************** ;----------------- ; RESET ;----------------- One_Wire_Reset: sbi DS_DDR,DQ ;1-Wire für 470 µS auf Low ziehen timer,470 ;470µs delay cbi DS_DDR,DQ ;OneWireHigh timer,60 ;60µs delay sbis DS_Pin,DQ ;Warten bis der 18B20 die Datenleitung freigibt rjmp pc-1 ; ret ;-------
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PIC_18F8722_Data_Sheet.pdf
Timer Prescaler (1, 4, 16) 16 4 1 1 1 1 PR2 Value FFh FFh FFh 3Fh 1Fh 17h Maximum Resolution (bits) 10 10 10 8 7 6.58 © 2008 Microchip Technology Inc. DS39646C-page 185 PIC18F8722 FAMILY TABLE 17-4: REGISTERS ASSOCIATED WITH PWM, TIMER2 AND TIMER4 Reset Name Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit
in „PIC 18F6527 mit 32MHz Takten“ · Mikrocontroller und Digitale Elektronik ·
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nFET_ZXM61N02FTA.pdf
ISSUE 1 - JUNE 2004 4 ZXM61N02F TYPICAL CHARACTERISTICS 100 100 +25°C VGS +150°C VGS ) ) A A 6V t 10 4V t 10 4V n 3V n 33VV e 2.5V r u u 2.5V C 1 2V C 1 2V i i r r 1.5V D D - 100m -100m I 1.5V I 10m 0.1 1 10 10m 0.1 1 10 VDS - Drain-Source Voltage (V) V DS - Drain-Source Voltage (V) Output Characteristics
in „5V Schalten mit GPIO 3,3V.“ · Analoge Elektronik und Schaltungstechnik ·
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ZXM61N02F-56180.pdf
ISSUE 1 - JUNE 2004 4 ZXM61N02F TYPICAL CHARACTERISTICS 100 100 +25°C VGS +150°C VGS ) ) A A 6V t 10 4V t 10 4V n 3V n 33VV e 2.5V r u u 2.5V C 1 2V C 1 2V i i r r 1.5V D D - 100m -100m I 1.5V I 10m 0.1 1 10 10m 0.1 1 10 VDS - Drain-Source Voltage (V) V DS - Drain-Source Voltage (V) Output Characteristics
in „Check Transistorschaltung“ · Analoge Elektronik und Schaltungstechnik ·
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ZXM61N02F-56180.pdf
ISSUE 1 - JUNE 2004 4 ZXM61N02F TYPICAL CHARACTERISTICS 100 100 +25°C VGS +150°C VGS ) ) A A 6V t 10 4V t 10 4V n 3V n 33VV e 2.5V r u u 2.5V C 1 2V C 1 2V i i r r 1.5V D D - 100m -100m I 1.5V I 10m 0.1 1 10 10m 0.1 1 10 VDS - Drain-Source Voltage (V) V DS - Drain-Source Voltage (V) Output Characteristics
in „NPN zur Negierung von Reed (N/O) ?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ZXM61N02F-56180.pdf
ISSUE 1 - JUNE 2004 4 ZXM61N02F TYPICAL CHARACTERISTICS 100 100 +25°C VGS +150°C VGS ) ) A A 6V t 10 4V t 10 4V n 3V n 33VV e 2.5V r u u 2.5V C 1 2V C 1 2V i i r r 1.5V D D - 100m -100m I 1.5V I 10m 0.1 1 10 10m 0.1 1 10 VDS - Drain-Source Voltage (V) V DS - Drain-Source Voltage (V) Output Characteristics
in „Mosfet mit Arduino Nano ansteuern (3,3V)“ · Mikrocontroller und Digitale Elektronik ·
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Datei
setdeg_float_.txt
uint16_t)(x2*x2))); a1 = arccos1024flash((uint16_t)(((x2*256)/d12)*4), arccostab1024flash); if(a1 <= 10){ a1 = arccos4096flashmini((uint16_t)(((uint32_t)x2*4096)/d12), arccostab4096flashmini); } ds = d12 - s; d123 = (float)sqrt((float)(ds*ds + (uint32_t)(uint16_t)(x3*x3))); a2m = arccos1024flash((uint16_t)((ds*128/d123)*8), arccostab1024flash); if(a2m <= 10){ a2m = arccos4096flashmini((uint16_t)(ds*4096/d123), arccostab4096flashmini); } a2p = arccos1024flash((uint16_t)(((uint16_t)(os*os)+d123*d123-(uint16_
in „floating point coprocessor“ · Mikrocontroller und Digitale Elektronik ·
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Datei
OneWire.asm
accu - ;- Anzahl Bits - Index - ;------------------------------------------------ One_Wire_Reset: sbi DS_DDR,DQ ;1-Wire für 470 µS auf Low ziehen timer,470 ;470µs delay cbi DS_DDR,DQ ;OneWireHigh timer,60 ;60µs delay sbis DS_Pin,DQ ;Warten bis der 18B20 die Datenleitung freigibt rjmp pc-1 ; ret One_Wire_Write
in „Probleme mit "MatchRom" bei DS18B20“ · Mikrocontroller und Digitale Elektronik ·
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DIS6531-DS08-0811.pdf
correction o Lens-shading compensationd low light performance o Parallel picture interface support, RAW 10-bit Bayer output CONFIDENTIAL © Digital Imaging Systems 2008. All rights reserved. All brand and product names are trademarks or service marks of their respective owners. Printed in Europe. DIS6531-DS08
in „Ansteuerung Kameramodul“ · Mikrocontroller und Digitale Elektronik ·
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PIC18f6622.pdf
Timer Prescaler (1, 4, 16) 16 4 1 1 1 1 PR2 Value FFh FFh FFh 3Fh 1Fh 17h Maximum Resolution (bits) 10 10 10 8 7 6.58 2004 Microchip Technology Inc. Preliminary DS39646B-page 185 PIC18F8722 FAMILY TABLE 17-4: REGISTERS ASSOCIATED WITH PWM, TIMER2 AND TIMER4 Reset Name Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit
in „PIC 18F6622 Zeit um EEPROM zu schreiben“ · Mikrocontroller und Digitale Elektronik ·
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lg_flatron_l1800p_lb886f_ch_cl-29.pdf
0.01UF160850V10%R/TPB(Y D704 0DS226009AA KDS226 TPKECSOT-2380V30 C522 0CK103CK51A 0.01UF160850V10%R/TPB(Y D712 0DS226009AA KDS226 TPKECSOT-2380V30 C526 0CH8106J691 10UF35VM105STD(CYL)R/TP D713 0DS226009AA KDS226 TPKECSOT-2380V30 C531 0CK103CK51A 0.01UF160850V10%R/TPB(Y D714 0DS226009AA KDS226 TPKECSOT-2380V30 C532 0CH8106J691 10UF35VM105STD(CYL)R/TP D715 0DS226009AA KDS226 TPKECSOT-2380V30 C533 0CK104CK56A 0.1UF160850V10%R/TPX7R D716 0DS226009AA KDS226 TPKECSOT
in „Überspannung in Mehrparteien-Wohunung. Baustrom, oder Kabel angebohrt?“ · Haus & Smart Home ·
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Datei
temp_str.c
Wire.endTransmission(); if( !(i2c_test_flags&(1<<I2C_RTC_TEMP_BSY)) ) { // read Temp Wire.beginTransmission(DS1307_ID); // DS anwaehlen printIIC(MSB_TEMP); // MSB Byte anwaehlen Wire.endTransmission(); Wire.requestFrom( ( DS1307_ID ), 2); // request temp Hi und Temp low 2 Byte __temp = (readIIC() & 0x00ff); /
in „RTC DS3231 - Temperatur Daten?“ · Mikrocontroller und Digitale Elektronik ·
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FDC6327C.pdf
-1.3 A P-Ch 0.205 0.25 ID(on) On-State Drain Current VGS = 4.5 V, VDS= 5 V N-Ch 8 A VGS = -4.5 V, DS = -5 V P-Ch -8 gFS Forward Transconductance VDS = 5 V, D = 2.7 A N-Ch 7.7 S V = -5 V, I = -1.9 A P-Ch 4.5 DS D Dynamic Characteristics C iss Input Capacitance N-Channel N-Ch 325 pF VDS = 10 V, VGS= 0
in „Port-Stromverstärkung,Push-Pull-Treiber“ · Analoge Elektronik und Schaltungstechnik ·
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MTP12P10_D-.pdf
(Note 1) Gate Threshold Voltage (DS = VGS, D = 1.0 mA) VGS(th) 2.0 4.5 Vdc T = 100°C 1.5 4.0 J Static Drain−Source On−Resistance (GS = 10 Vdc,DI = 6.0 Adc) RDS(on) − 0.3 W Drain−Source On−Voltage (V = 10 V) V Vdc GS DS(on) (D = 12 Adc)
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Datei
clock_porta_forumpost.asm
points ; .line 9; "clock_porta_forumpost.c" TRISA = 0; BSF STATUS,5 BCF STATUS,6 CLRF _TRISA ; .line 10; "clock_porta_forumpost.c" PORTA = 0x3f; MOVLW 0x3f BCF STATUS,5 MOVWF _PORTA _00120_DS_ ; .line 13; "clock_porta_forumpost.c" for (i = 0; i < 200; i++) { BANKSEL r0x20 CLRF r0x20 CLRF r0x21 ;signed compare: left < lit(0xC8=200), size=2, mask=ffff _00111_DS_ MOVF r0x21,W ADDLW 0x80 ADDLW 0x80 BTFSS STATUS,2 GOTO _00124_DS_ MOVLW 0xc8 SUBWF r0x20,W _00124_DS_ BTFSC STATUS,0 GOTO _00114_DS_ ;genSkipc:3831: created from rifx:0xbf8721cc ; .line 14; "clock_porta_forumpost.c
in „ausgänge PORTA vom pic wollen nicht so recht in C“ · Mikrocontroller und Digitale Elektronik ·
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IS42S16160B.pdf
NOP NOP NOP NOP BURSTTERM NOP CMS tCMH DQM/DQML DQMH AS tAH A0-A9, A11, A12 ROW COLMNm (2) AS tAH A10 ROW AS tAH BA0, BA1 BANK BANK DS tDH DS tDH tDS tDH DS DH tDS tDH tDS tDH DQ DINm DINm+ 1 DINm+ 2 D INm+3 DINm- 1 tRCD Full page completed DON'T CARE Notes: 1) Burst Length = Full Page 2) x16: A9, A11
in „Fragen zu SDRAM“ · Mikrocontroller und Digitale Elektronik ·
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Datei
1wire.s
1wire ;;;; ;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;;; onewire_presence: sbis DS_PIN,DS18b20 ;prüfen ob kurzschluß rjmp DS_error cbi DS_port,DS18b20 ;DS18b20 low sbi DS_DDR,DS18b20 ;DS18b20 port ausgang nop nop sbic pinc,DS18b20 rjmp DS_error1 rcall delay_500us cbi DS_DDR,DS18b20
in „ds18s20 atmega16 asm“ · Mikrocontroller und Digitale Elektronik ·
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PDF
sihfr014.pdf
25 Zero gate voltage drain current IDSS μA V DS = 48 V, VGS = 0 V, J = 125 °C - - 250 Drain-source on-state resistance R DS(on) VGS = 10 V ID= 4.6 A b - - 0.20 Ω Forward transconductance gfs VDS = 25 V, D = 4.6 A 2.4 - - S Dynamic Input capacitance
in „Hilfe bei Bauteil identifikation“ · Analoge Elektronik und Schaltungstechnik ·
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0900766b81524b17.pdf
Ic(max) u C 60 0 o Co(Square wave)twave c e 30 o Tj = 175°C, Tc = 90°CCE= 400 V C VGE = 15 V, Rg = 10Ω , duty = 50% 0 1 10 100 Frequency f (kHz) R07DS1291EJ0101 Rev.1.01 Page 4 of 9 Oct 22, 2015 RJH65T47DPQ-A0 Preliminary Switching Characteristics (Typical) (1) Switching Characteristics (Typical) (2)
in „Vergleichstyp IGBT IXGQ90N27PB“ · Analoge Elektronik und Schaltungstechnik ·
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DMG1024UV.pdf
0.3 0.45 VGS = 4.5V, D = 600mA T 0.4 0.6 VGS = 2.5V, D = 500mA C Static Drain-Source On-Resistance R DS (ON) - 0.5 0.75 Ω VGS = 1.8V, D = 350mA U - 9 VGS = 1.7V, D = 140mA D - 10 VGS = 1.5V, D = 100mA O Forward Transfer Admittance |Yfs - 1.4 - S VDS = 10V, D = 400mA R Diode Forward Voltage 0.7 1.2 V P
in „MOSFET Ersatztypen für DMG1024 u. DMG1023 gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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STP15N80K5.pdf
(A) 1µs i 10µs 10 raon iaDS 100µs it aR ti ym 1ms eredb Opii 10ms 1 L Tj=150°C Tc=25°C Single pulse 0.1 0.1 1 10 100 V DS(V) 6/23 DocID023468 Rev 3 STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5 Electrical characteristics
in „1500V 8A mit MOSFET schalten“ · Analoge Elektronik und Schaltungstechnik ·
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AN3675.pdf
, 8-byte value. If instructed to compute a secret, the DS2432 starts its SHA-1 engine and computes a MAC using these input data items as shown in Figure 10. The lower 8 bytes of the 20-byte MAC are automatically copied to the memory location of the secret and
in „Kopierschutz für (Entwicklungs-) Bibliotheken - Diplomarbeit“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MOSFET_N_Dual_DMT3020LSD_LowRDS_SOIC8.pdf
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Dual N-Channel MOSFET BVDSS R DS(ON) Max TA= +25°C Low On-Resistance 30V 20m @ V GS = 10V 16A Low Gate Threshold Voltage T 32m @ V GS = 4.5V 13A Low Input Capacitance N Fast Switching Speed O Low Input/Output Leakage U Description
in „Unerwünschter Peak beim Ausschalten eines Kleinsignal-MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
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IRL540.pdf
MAXIMUM RATINGS (T = 25 °C, unlessCotherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 Gate-Source Voltage V ± 10 V GS TC = 25 °C 28 Continuous Drain Current VGS at 5.0 V T =100°C ID 20 A C Pulsed Drain Current DM 110 Linear Derating Factor 1.0 W/°C b Single Pulse Avalanche Energy
in „MOSFET mit Treiber Verständnisproblem“ · Analoge Elektronik und Schaltungstechnik ·
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IRL540.pdf
MAXIMUM RATINGS (T = 25 °C, unlessCotherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 Gate-Source Voltage V ± 10 V GS TC = 25 °C 28 Continuous Drain Current VGS at 5.0 V T =100°C ID 20 A C Pulsed Drain Current DM 110 Linear Derating Factor 1.0 W/°C b Single Pulse Avalanche Energy
in „Problem mit Mosfet IRL540 an 52V, öffnet nicht mehr“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ACS754SCB100PFF.pdf
ferrous flux concentrator within the current sensor package. I (%) Primary Current 90 Transducer Output 10 t Rise Time,rt 7 115NortheastCutoff,Box15036 ACS754100-DS, Rev. 3 Worcester,Massachusetts01615-0036 (508)853-5000 Current Sensor: ACS754xCB-100 Standards and Physical Specifications Parameter Specification
in „80A Strom messen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TB053_Generatirng_High_Voltage_with_PIC16C781.pdf
kΩ +5V to Display MCP9700 9 bits .1 μF Temperature Sensor FIGURE A-2: NIXIE TUBE DISPLAY +170 VDC 10 kΩ 10 kΩ 10 kΩ Nixie Tubes 2.2 kΩ from Microcontroller FMMT497TA 2.2 kΩ CD4028 FMMT497TA x10 2.2 kΩ CD4028 FMMT497TA x10 DS91053B-page 4 © 2005 Microchip Technology Inc. Note the following details of
in „Nixie Netzteil“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
___MPASM_USER_S_GUIDE_with_MPLINK_and_MPLIB.pdf
“P12C509.INC” Varl EQU H'10' Var2 EQU H'30' ... CODE MOVLW InitialValue BANKSEL Varl MOVWF Varl BANKSEL Var2 MOVWF Var2 PAGESEL Subroutine CALL Subroutine ... Subroutine CLRW ... RETLW 0 1997 Microchip Technology Inc. DS33014F
in „Anfängerfrage zu Assembler“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Temp_LAN_display_Volt.ino
boolean Pin4ON = false; boolean Pin5ON = false; boolean Pin6ON = false; boolean Pin7ON = false; OneWire ds(22); //pin für ds18b20 LiquidCrystal lcd (11, 10 , 9, 6, 5, 4); //Digitale Pins an dem das Display1 angeschlossen ist LiquidCrystal lcd2(11, 10 , 8, 6, 5, 4); //Digitale Pins an dem das Display2 angeschlossen
in „atmaga2560 + Interrupt + lan = abbruch.“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AP3031.pdf
1500ppm total Br + Cl) and <1000ppm antimony compounds . AP3031 1 of 13 December 2022 Document number: DS41442 Rev. 2 - 2 www.diodes.com © 2022 Copyright Diodes Incorporated. All Rights Reserved. AP3031 Typical Applications Circuit V IN 5V L 4.7H D VOUT CIN VIN SW COUT 3*13 10F OV AP3031 0.47F CTRL On
in „Verständnisfrage Datenblatt AP3031 PMIC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
bs170.pdf
Gate Threshold Voltage GS= VDS, V GS(th) 1.0 2 3.0 V I = 1 mA D Gate-Body Leakage Current IGSS – – 10 nA at GS= 15 V, DS = 0 Drain Cutoff CurrentDS= 25 V, GS= 0 IDSS – – 0.5 A Drain-Source ON Resistance R DS(ON) – 3.5 5.0 at GS= 10 V,DI = 0.2 A Thermal Resistance Junction to Ambient Air R thJA – – 1501) K/W Forward Transconductance gm – 200 – mS at V = 10 V, I = 0.2 A, f = 1 MHz DS D Input Capacitance C iss – 30 – pF at DS= 10 V, GS = 0, f = 1 MHz Switching Times at GS = 10 V,DS = 10 V,DR = 100 Turn-On Time ton – 5 – ns Turn-Off Time t – 15 – ns off 1Valid
in „Integrator resetten, bzw. ersatz für SD211“ · Mikrocontroller und Digitale Elektronik ·
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Datei
HWP_EX16_MRF24WB_C30.h
OSC with 4x PLL _CONFIG1(JTAGEN_OFF & FWDTEN_OFF) // JTAG off, watchdog timer off #elif defined(__dsPIC33F__) || defined(__PIC24H__) || defined(__dsPIC33E__)|| defined(__PIC24E__) // All dsPIC33F and PIC24H PIMs _FOSCSEL(FNOSC_PRIPLL) // PLL enabled _FOSC(OSCIOFNC_OFF & POSCMD_XT) // XT Osc _FWDT(FWDTEN_OFF
in „Microchip Wifi Demo APP portieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Microchip_AppNote_00994a.pdf
anti-aliasing filter The MCP3905/6 devices have an input bandwidth of represented by the circuit in Figure 6. DS00994A-page 6 © 2005 Microchip Technology Inc. AN994 R 0 0 V IN VOUT -5 R -5 ) SH -10 r B -15 e C g-10 ( LSH a -20 s M h -15 -25 P -30 -20 -35 1.E+0 1.E+1 1.E+2 1.E+3 1..E+5 1.E+6.E+7 FIGURE 6: Shunt
in „Strom 10A bis 300A messen mit Tiny26“ · Mikrocontroller und Digitale Elektronik ·
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PDF
CFAG12864BTFHV_v3.0.pdf
V0L(R)>V2L(R)=VDD-2/7(VDD-VEE)>V3L(R)=VEE+2/7(VDD-VEE)>V5L(R) Neotec Semiconductor Ltd. 16/24 NT7108DS Rev0.3 20060607 www.neotec.com.tw Appendix Neotec Semiconductor Ltd. 新 德 科 技 股 份 有 限 公 司 NT7108 LCD Driver AC CHARACTERISTICS (VDD=+5V±10%, Vss=0V, Ta=-30℃ to +85℃) Clock Timing Characteristic Symbol
in „avr asm LCD Problem“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TN2404K.pdf
MOSFET FEATURES PRODUCT SUMMARY • Low On-Resistance: 4 Part V R V I Q Secondary Breakdown Free: 260 V DS DS(on) GS(th) D g Number (V) () (A) (A) (Typ.) Low Power/Voltage Driven TN2404K 0.2 Low Input and Output Leakage TN2404K, 240 4 at GS = 10 V 0.8 to 2 4.87 nC 0.3 Excellent Thermal Stability BS107KL
in „MOSFET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
OZ960_O2MICRO.pdf
a high- quality-factor resonant tank circuit yields a good- through the burst-mode control block. 10/23/01 OZ960-DS-1.6 Page 1 Copyright 2000 - 01 by O Mic2o All Rights Reserved U.S. Patent #6,259,615 OZ960 TYPICAL APPLICATION CIRCUIT 9 J 1 2 1 V R A C B 9 9 U R 4 P 1 3 0 7 2 1 . 9 C 10 C 2 C 0 2 V
in „Ic´s (unbekannt) für den Tft monitor gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
OZ960.pdf
a high- quality-factor resonant tank circuit yields a good- through the burst-mode control block. 10/23/01 OZ960-DS-1.6 Page 1 Copyright 2000 - 01 by O Mic2o All Rights Reserved U.S. Patent #6,259,615 OZ960 TYPICAL APPLICATION CIRCUIT 9 J 1 2 1 V R A C B 9 9 U R 4 P 1 3 0 7 2 1 . 9 C 10 C 2 C 0 2 V
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PDF
OZ960.pdf
a high- quality-factor resonant tank circuit yields a good- through the burst-mode control block. 10/23/01 OZ960-DS-1.6 Page 1 Copyright 2000 - 01 by O Mic2o All Rights Reserved U.S. Patent #6,259,615 OZ960 TYPICAL APPLICATION CIRCUIT 9 J 1 2 1 V R A C B 9 9 U R 4 P 1 3 0 7 2 1 . 9 C 10 C 2 C 0 2 V
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