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Datei
ThermometerGabi1.2.bas
'************************************************* '* Thermometer,Anzeige mit Schrittmotoren '* 2x DS18S20 als Temperatursensor '************************************************* 'Verbesserungen: '"Innen" und "Aussen"-Messung 'Min und Max-Anzeige für Aussentemperatur 'Timergesteuert 24Std Messwertspeicher
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PDF
irfb3077pbf.pdf
On-Resistance ––– 2.8 3.3 mΩ V = 10V, I = 75A g GS D VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V V DS= VGS ID= 250μA DSS Drain-to-Source Leakage Current ––– ––– 20 μA V DS= 75V, VGS= 0V ––– ––– 250 V DS= 75V, VGS= 0V, TJ= 125°C GSS Gate-to-Source Forward Leakage ––– ––– 100 nA V GS= 20V Gate-to-Source
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CET_CEU3252.PDF
MAXIMUM RATINGS Tc= 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage V 30 V DS Gate-Source Voltage VGS –20 V Drain Current-Continuous ID 25 A Drain Current-Pulsed DM 100 A Maximum Power Dissipation @ TC= 25 C 31 W - Derate above 25 C PD 0.25 W/ C Operating and Store Temperature
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PDF
EE93LC46A.pdf
1 9 8 NC CLK 2 C 7 Vcc L 3 L 3 6 6 NC CLK 2 C 7 NC 2 C 7 2 4 7 DOI 4 / 5 Vss 6 CLK 6 NC Vcc A Vss B DI 3 / 6 NC A X B DI 3 B 6 NC CS 3 X 6 DO 4 5 Vss DO DO 4 5 Vss CLK 4 5 DI Microwire is a registered trademark of National Semiconductor Incorporated. 2000 Microchip Technology Inc. DS21173E-page 1
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PDF
datasheet.pdf
Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage (V = 0) 30 V DS GS V Drain-gate voltage (R = 20 kΩ) 30 V DGR GS V Gate- source voltage ± 15 V GS ID Drain current (continuous) aC T = 25°C 22 A ID(1) Drain current (continuous) aC T = 100°C 16 A IDM (1) Drain current
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uP1542-DS-F00A0.pdf
break frequencies are calculated as: frequency. Careful design of Z COMPand Z FBovides tight 12 uP1542-DS-F00A0, Apr. 2018 www.upi-semi.com uP1542 Application Information VIN 12 doublepole.AddingafeedforwardcapacitorC3onoriginal DCGain = 20×log( ) = 20×log( ) =16.5dB ∆V OSC 1.8 type II compensation network
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TBD62783AFG_datasheet_en_20160511.pdf
FG type SOP18-P-375-1.27 FNG type SSOP18-P-225-0.65 FWG type P-SOP18-0812-1.27-001 TBD62783AFNG Pin connection (top view) TBD62783AFWG Pin connection may be simplified for explanatory purpose. P-SOP18-0812-1.27-001 Weight P-DIP18-300-2.54-001 : 1.3g (Typ.) SOP18-P-375-1.27 : 0.41g (Typ.) SSOP18-P-225-0.65 : 0.09g (Typ.) P-SOP18-0812-1.27-001 : 0.48g (Typ.) 1 2016-05-11 © 2016 TOSHIBA Corporation TBD62783APG/FG/FNG/FWG Pin explanations
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20002234D.pdf
2-18: MCP1640/B High Load Threshold Current vs. V . IN Waveforms. 2010-2015 Microchip Technology Inc. DS20002234D-page 7 MCP1640/B/C/D Note: Unless otherwise indicated, VIN = EN = 1.2V, C OUT = C IN= 10
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DS2438A.pdf
address location of the time-related registers. TIME REGISTER FORMAT Table 10 27 26 25 24 23 22 21 20 LSB MSb (unit = 1s) LSb 215 214 213 212 211 210 29 28 MSb (unit = 1s) LSb 23 22 21 20 19 18 17 16 2 2 2 2 2 2 2 2 MSb (unit = 1s) LSb 231 230 229 228 227 226 225 224 MSB 64-BIT LASERED ROM Each DS2438
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arduinoheader.pdf
C D R D D I U I T T D D D T E C P P P O O C C C O L L S S R R L L L R XTAL 1 0 +5 XTA1 0 XTAL 2.54 DS1307 R1 R2 1 8 Vishay CVRisChWay1C20R6C4WK7102F0K64EKA70FKEA X1 Vcc 2 7 7 X2 3SQW S V-Bat 3 D SCL 6 GND VCC GND 4 SDA 5 BAT- + DS1307Z 74LVT245WM C4 1 0 C1 1 20 GND T/R Vcc +5 A N N K Kyocera / AVX 0603YC103JAZ2A
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___MPASM_USER_S_GUIDE_with_MPLINK_and_MPLIB.pdf
and the mnemonic and the operand(s). Multiple operands must be separated by a comma. For example: DS33014F - page 18 1997 Microchip Technology Inc. Chapter 2. P a t Example 2.2 Sample MPASM Source Code 1 – ; M ; Sample MPASM Source Code. For illustration only. P ; A list p=16c54 S Dest equ H’0B’ M
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TPH1R104PB_Datasheet.pdf
specified) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS= ±20 V,DS = 0 V ±1 µA Drain cut-off current IDSS V DS= 40 V,GS = 0 V 10 Drain-source breakdown voltage V (BR)DSSID= 10 mA, GS = 0 V 40 V V (BR)DSXID= 10 mA, GS = -20 V 20 Gate threshold voltage
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TPH1R104PB_datasheet_en_20181228.pdf
specified) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS V GS= ±20 V,DS = 0 V ±1 µA Drain cut-off current IDSS V DS= 40 V,GS = 0 V 10 Drain-source breakdown voltage V (BR)DSSID= 10 mA, GS = 0 V 40 V V (BR)DSXID= 10 mA, GS = -20 V 20 Gate threshold voltage
in „Einfluss von thermischen Vias auf den Wärmetransport eines MOSFETs“ · Platinen ·
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Datei
main.c
} } #endif // ******************************************************************************* void DS1820init(void) { char lcd_buffer[33]; // maximum number of DS1820/DS18S20 connected to the 1 Wire bus unsigned char i,j,devices; int temp; char text[16]; TIMSK=0x00; w1_init(); lcd_clear(); lcd_putsf("CodeVisionAVR\n1 Wire Bus Demo"); delay_ms(500); lcd_clear(); // detect how many DS1820/DS18S20 devices // are connected to the 1 Wire bus //devices=w1_search(0xf0,rom_code); sprintf(lcd_buffer,"%u DS1820\nDevice detected",devices); lcd_puts(lcd_buffer); delay_ms(500); //display the
in „Heizungssteuerung mit ATMEGA 32“ · Mikrocontroller und Digitale Elektronik ·
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IRF4905.pdf
- 4.5V e BOTTOM - 4.5V u 100 u 100 C C e e r r o o - - t t i i -4.5V r 10 -4.5V r 10 D D , , -D -D 20µs PULSE WIDTH 20µs PULSE WIDTH T c 25°C TC= 175°C 1 A 1 A 0.1 1 10 100 0.1 1 10 100 -V , Drain-to-Source Voltage (V) -V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2
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bs1Appnotes.pdf
. This keeps Parallax,Inc.•BASICStampProgrammingManual1.9•Page 157 BASIC Stamp I Application Notes 18: One Pin, Many Switches ' the comparison/search required to identify the switch as simple as ' possible. ID_sw: if b0 > 8 then skip ' Take 8 readings before trying to b0 = b0+1 ' identify the switch.
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Datei
thermometer0_1.bas
***************************************************** 'THERMOMETER MIT 4-stelliger LED Anzeige und DS1820 by LEXATRONIC 'Anzeigen mit gemeinsamer Anode an PortB0 bis PortB6 (Segment A an PB0 usw.) 'Digitansteuerung über 4 PNP Transistoren über PD2 bis5 'AT90S2313-Deklarationen $regfile = "2313def.dat
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PDF
si4946ey.pdf
Charge Q gs V DS= 30 V, GS = 10 V,DI = 4.5 A 4 nC Gate-Drain Charge Q gd 3 Gate Resistance Rg 1 3.6 W Turn-On Delay Time d(on) 13 20 Rise Time tr 11 20 VDD = 30 V,LR = 30 W Turn-Off Delay Time d(off) ID^ 1 A, VGEN =
in „Frage zu Ic SI4948“ · Analoge Elektronik und Schaltungstechnik ·
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ZndUhr01.asm
Zeit auf -1 mov dsh,ff mov snr,ff ;Schuss ungültig mp_4a: sbrs tfl,tru ;Taste runter? ja... rjmp mp_4b ;nein... lds dsl,dsla ;Wert vom letzten Datensatz lds dsh,dsha ;plus ldi wl,5 ;5 Sekunden add dsl,wl adc dsh,null lds snr,snra ;alte Schussnummer inc snr ;plus 1 mp_4b: rjmp ds_korr1 mp_05: ;+/- 1 h
in „Probleme mit USART (ATMEGA8535)“ · Mikrocontroller und Digitale Elektronik ·
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Datei
main.c
read_rtc_temperature_flag = 1; debug_log_printf ("cmd: set rtc_temp_correction = %d\r\n", val); break; } case DS18XX_TEMP_INDEX_NUM_VAR: { debug_log_printf ("cmd: set ds18xx_temp_index = %d, but it's readonly\r\n", val); break; } case DS18XX_TEMP_CORRECTION_NUM_VAR: { temp_set_temp_correction (val); measure_temperature_flag
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soft_clip.sch.pdf
B 22p 10MHz PB3(OC1) 15 JP1 4 XTAL2 a PB4 16 1 PB5(MOSI) 17 2 1 RESET PB6(MISO) 18 3 GND c PB7(SCK) 19 4 VIN VCC 5 D3 U4 VeC PD0(RXD) 2 6 BAT43 78L05 PD1(TXD) 3 IN OUT 20 VCC PD2(INT0) 6 CLIP_DIG ISP CON2 GND M PD3(INT1) 7 CALL GND C14 PD4(T0) 8 C17 C15 C16 C18 - 100n PD5(T1) 9 +15...+20V 100u/25V 100n 100n 100u/16V VCC 10 GND PD6(ICP) 11 o r 2 GND GND GND GND GND GND t GND c V 3 O R100 e G 0R l U5 A E 1 DS1813 (DS1811) A AGND GND GND e Title u Size Number
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IPB180P04P4.pdf
Drain-source breakdown voltage V (BR)DSSV GS=0V, ID= -1mA -40 - - V Gate threshold voltage V GS(th) V DS=V GS, D =-410µA -1.2 -1.7 -2.2 V DS=-32V, V GS=0V, Zero gate voltage drain current IDSS T =25°C - -0.1 -1 µA j V DS=-32V, V GS=0V, 2) - -20 -200 T j125°C I V =-16V, V =0V Gate-source leakage current
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FDC638P-D.PDF
Maximum Ratings T A25 C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±8 V D Drain Current – Continuous (Note 1a) –4.5 A – Pulsed –20 P Power Dissipation for Single Operation (Note 1a) 1.6 D W (Note 1b) 0.8 TJ, STG Operating and Storage Junction
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PMV48XPA.pdf
Unit Static characteristics V(BR)DSS drain-source ID= -250 µA; V GS = 0 V; Tj= 25 °C -20 - - V breakdown voltage VGSth gate-source threshold ID= -250 µA; V DS = VGS ; j = 25 °C -0.75 -1 -1.25 V voltage IDSS drain leakage current V DS = -20 V; GS = 0 V; Tamb = 25 °C - - -1 µA IGSS gate leakage
in „Bauteil gesucht: Markierung: WDZ - SOT23-3“ · Analoge Elektronik und Schaltungstechnik ·
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irl2203ns.pdf
3.3V r BOTTOM2.7V r BOTTOM2.7V u100 u100 C C c r u u S S 2.7V o o - n a 10 a 10 r 2.7V D , , D ID I 20µs PULSE WIDTH 20µs PULSE WIDTH T = 25 C TJ= 175 C 1 J 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics Fig 2. Typical
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CS20N60.pdf
Rating Symbol Parameter Test Conditions Units Min. Typ. Max. td(ON) Turn-on Delay Time -- 20 -- tr Rise Time ID=10A VDD =200V -- 28 -- V GS= 10V RG=4.7Ω ns td(OFF) Turn-Off Delay Time -- 90 -- tf Fall Time -- 46 -- Q Total Gate Charge -- 95 g Q gs Gate to Source Charge ID=20A VDD=300V -- 18
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PSMN8R7-80PS_MOSFET.pdf
V DS = 80 V; VGS = 0 V; Tj= 25 °C - 0.3 5 µA V DS = 80 V; VGS = 0 V; Tj= 125 °C - - 100 µA I gate leakage current V = -20 V; V = 0 V; T = 25 °C - 10 100 nA GSS GS DS j V GS = 20 V; VDS = 0 V; Tj= 25 °C -
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STD60N55F3.pdf
V DS Drain-source voltage GS=0) 55 V V GS Gate-source voltage ± 20 V ID Drain current (continuous) Ct T = 25°C 80 42 A ID Drain current (continuous) Ct T = 100°C 56 30 A (1) IDM Drain current (pulsed) 320
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RequiresAcrobat6.pdf
from http://www.datasheetarchive.com. GF9926 Dual N-Channel Enhancement-Mode MOSFET LowV GS(th) V DS 20V R DS(ON) 30 ΩmI 6.0AD H C ® E N T R E T F D1 D1 D2 D2 E N 8 7 6 5 G SO-8 0.189 (4.80) Q1 Q2 8 5 1 2 3 4 0.157 (3.99) 0.150 (3.81) S1 G1 S2 G2 0.244 (6.20) 0.228 (5.79) 1 4 Dimensions in inches 0.05
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kicad_8450_dcm_liste_neu_v3.pdf
Digital Thermometer DS1822Z Econo 1-Wire Digital Thermometer MSOP-8 DS1825 Programmable Resolution 1-Wire Digital Thermometer With 4-Bit ID DS18B20 Programmable Resolution 1-Wire Digital Thermometer TO-92 DS18B20-PAR 1-Wire Parasite-Power Digital Thermometer DS18B20U Programmable Resolution 1-Wire Digital Thermometer MSOP-8 DS18B20Z Programmable Resolution 1-Wire Digital Thermometer SOIC-8 DS18S20 High-Precision 1-Wire Digital Thermometer TO-92 DS18S20-PAR
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Datei
ds1820.c
detect short circuit uint8_t err; DS_PORT &= ~DS_BIT; // output is always low, signal is controlled by DDR DS_DDR |= DS_BIT; // pull bus low _delay_us(480); // wait 480 us cli(); DS_DDR &= ~DS_BIT; // release bus _delay_us(70); // wait
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Service_Guide_DS1000E.pdf
II 300Vrms Offset Range ± 40V(250mV/div~10V/div),± 2V(2mV/div~245mV/div) Analog Bandwidth 100MHz (DS1102D,DS1102E) 50MHz (DS1052D, DS1052E) Single-shot 100MHz (DS1102D, DS1102E) Bandwidth 50MHz (DS1052D, DS1052E) Selectable Analog Bandwidth Limit 20MHz (typical) Lower Frequency Limit (AC –3dB) ≤5Hz
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2117592.pdf
Modulation 802.11b mode (DS-SS: IEEE 802.11b) 802.11g mode (OFDM: IEEE 802.11g) Transmission Speed 802.11b mode 11Mbps, 5.5Mbps, 2Mbps, 1Mbps 802.11g mode 54Mbps, 48Mbps, 36Mbps, 24Mbps, 18Mbps, 12Mbps, 9Mbps, 6Mbps Tx
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NL6448AC33-29.pdf
Symbol Function Pin No. Symbol Function Note 4 Note 4 1 GND Ground (SG) 19 GND Ground 2 CLK Dot clock 20 B0 Blue data (LSB) 3 Hsync Horizontal sync. 21 B1 Blue data 4 Vsync Vertical sync. 22 B2 Blue data 5 GND Ground Note 4 23 B3 Blue data 6 R0 Red data (LSB) 24 B4 Blue data 7 R1 Red data 25 B5 Blue data
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AG101.pdf
Operational Bandwidth MHz 60 3000 Frequency MHz 900 1900 900 1900 Test Frequency MHz 800 S21 (5) dB 14 12.8 14 12.5 Gain dB 13 14 16 S11 dB -10 -9 -10 -9 Input Return Loss(5) dB 8.5 S22 dB -27 -22 -28 -19 Output Return Loss dB 20 Output P1dB dBm +15 +15 +14 +14 Output P1dB dBm +15 Output IP3 dBm +32.5
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LM3647-1.pdf
and off. The LM3647 automatically detects the presence of a © 2001 National Semiconductor CorporatiDS101318 www.national.com 4 6 3 2.0 Connection Diagram M L DS101318-2 Top View Order Number LM3647IM See NS Package Number M20B 2.1 PIN DESCRIPTIONS Pin No. Name I/O Description 1 SEL3 I Input to Select
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K9F1G08U0B.pdf
(I) 48 - TSOP1 - 1220F Unit :mm/Inch X A 20.00 ±0.20 M 0 0 0.787±0.008 . . 0 0 3 1 . . . . #1 #48 + - + - 2 0 ) 0 . 5 1 0 . . 0(0 X A 0 2 0 8 . 4 . 84 1 0 1 0 0 9 . 0 0 0 #24 #25 1.00±0.05 0.05 MIN 0.039±0.002 0.002 Y 18.40±0.10 7 5 3 1.20 MAX
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RT8298E-02.pdf
3 7 5, 9 (Exposed Pad) R2 Enable EN/SYNC GND 20k Table 1. Recommended Component Selection R1 (k) R2 (k) L (H) V OUT (V) COUT (F) 1.2 62 127 1.5 22F x 3 1.8 62 50.5 1.5 22F x 3 2.5 62 30 2.2 22F x 3 3.3 62 20 2.2 22F x 3 5 93 18 2.8 22F x
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PDF
RT8298E-02.pdf
3 7 5, 9 (Exposed Pad) R2 Enable EN/SYNC GND 20k Table 1. Recommended Component Selection R1 (k) R2 (k) L (H) V OUT (V) COUT (F) 1.2 62 127 1.5 22F x 3 1.8 62 50.5 1.5 22F x 3 2.5 62 30 2.2 22F x 3 3.3 62 20 2.2 22F x 3 5 93 18 2.8 22F x
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PDF
RT8298E-02.pdf
3 7 5, 9 (Exposed Pad) R2 Enable EN/SYNC GND 20k Table 1. Recommended Component Selection R1 (k) R2 (k) L (H) V OUT (V) COUT (F) 1.2 62 127 1.5 22F x 3 1.8 62 50.5 1.5 22F x 3 2.5 62 30 2.2 22F x 3 3.3 62 20 2.2 22F x 3 5 93 18 2.8 22F x
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PDF
irlb3034pbf-Datasheet.pdf
, f = 1 MHZ C iss= Cgs+ Cgd, CdsSHORTED ID= 185A V = 32V C = C ) 4.5 DS rss gd ( VDS = 20V C oss= Cds+ Cgd e 4.0 ) C a p10000 iss l 3.5 ( V c Coss e 3.0 t u c o 2.5 p Crss - a - 2.0 , 1000 t C G 1.5 , G 1.0 V 0.5 100 0.0 1 10 100 0 20 40 60 80 100 120 140 V , Drain-to-Source
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PDF
IRLB3034PbF.pdf
, f = 1 MHZ C iss= Cgs+ Cgd, CdsSHORTED ID= 185A V = 32V C = C ) 4.5 DS rss gd ( VDS = 20V C oss= Cds+ Cgd e 4.0 ) C a p10000 iss l 3.5 ( V c Coss e 3.0 t u c o 2.5 p Crss - a - 2.0 , 1000 t C G 1.5 , G 1.0 V 0.5 100 0.0 1 10 100 0 20 40 60 80 100 120 140 V , Drain-to-Source
in „Aufwärtsschaltregler bauen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLB3034.pdf
, f = 1 MHZ C iss= Cgs+ Cgd, CdsSHORTED ID= 185A V = 32V C = C ) 4.5 DS rss gd ( VDS = 20V C oss= Cds+ Cgd e 4.0 ) C a p10000 iss l 3.5 ( V c Coss e 3.0 t u c o 2.5 p Crss - a - 2.0 , 1000 t C G 1.5 , G 1.0 V 0.5 100 0.0 1 10 100 0 20 40 60 80 100 120 140 V , Drain-to-Source
in „Logic Level Mosfet - Welcher "kann mehr"“ · Analoge Elektronik und Schaltungstechnik ·
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TD_Meanwell_-_RSP-500-24__PSU_Powersupply_Stromumformer_Creality_3D-Drucker_Mean_Well_.pdf
150mVp-p 150mVp-p 150mVp-p OUTPUT VOLTAGEADJ. RANGE 2.8 ~ 3.6V 3.6 ~ 4.3V 4.5 ~ 5.5V 10 ~ 13.2V 13.5 ~ 18V 20 ~ 26.4V 26 ~ 30V 41 ~ 56V VOLTAGETOLERANCE Note.3 ±2.0% ±2.0% ±2.0% ±1.0% ±1.0% ±1.0% ±1.0% ±1.0% LINE REGULATION ±0.5% ±0.5% ±0.5% ±0.3% ±0.3% ±0.2% ±0.2% ±0.2% LOAD REGULATION ±1.0% ±1.0% ±1.0%
in „Verkabelung eines 3D-Druckers“ · Analoge Elektronik und Schaltungstechnik ·
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PseudoKunstkopfStereo.pdf
f5913e dc $006394 dc $18d647 dc $da1b28 dc $241627 dc $7eb851 dc $383916 dc $64f7ec dc $4423e0 dc $9b2e56 dc $f17b2f dc $3763f3 dc $a65783 dc $b6fb23 dc $445f1e dc $353686 dc $e8af82 dc $eb90cf dc $ffdea0 dc $0737e5 dc $15b53f
in „Pseudo Kunstkopf Stereo mit DSP56002, alte Motorola Applikation“ · Digitale Signalverarbeitung / DSP / Machine Learning ·
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PDF
TMC4671-LA_datasheet.pdf
1: ext. MCLK input 2: ext. MCLK output 3: ext. CMP mclk_polarity_b bit(18) 0: off 1: on mdat_polarity_b bit(19) 0: off 1: on sel_nclk_mclk_i_b bit(20) 0: off 1: on 0x05 h dsADC_MCLK_A This register is used to modify Delta Sigma modulator clock. Do not modify if you use
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NDP6020P.pdf
Transistor General Description Features These logic level P-Channel enhancement mode power field -24 A, -20 V. R DS(ON) 0.05 Ω @ V =GS4.5 V. R DS(ON)= 0.07 Ω @ V =GS2.7 V. effect transistors are produced using Fairchild's proprietary, R = 0.075 Ω @ V = -2.5 V. high cell density, DMOS technology. This very
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CW6626-Datasheet-DS6626V1.1.pdf
IOVDD Active low system reset. This pin contains a weak pull-up Digital I/O and Core Power Supplies 18 IOVDD I NA Power supply for GPIOs. 19 IOGND - NA Ground connection of GPIOs 44 REG_IN I NA This pin serves as an input of the on-chip VDD and RVDD LDO regulators. 20, 45 VDD - NA On-chip 1.8V LDO output
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ureflow_1.0.1.pdf
C4 C7 100nF D6 VBUS A4 1 4 GREEN TH1 100nF VBUS B4 C 3 3 SCK 5 SCK GND GND A9 U2 C VTXD 2 TXD 1 T+ VBUS PRTR5V0U2X 4 V 3 RXD 2 C6 2 CS 6 CS +3V3 +3V3 VBUS B9 RXD 10nF T- B7 1 SO 7 SO D- Q3 D-A7 D- 3 D- 6 UD- ~{CTS}9 2 B6 D+ 2 D+ 5 10 S8550 R13 R18 D
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MCP9501-2-3-4.pdf
VDD= 5.5V R rt A VDD= 4.1V P1.5 75 sy ( 25 VDD= 2.7V V sH D 1.0 Hysteresis 65 m O ID V P 20 )V 0.5 55 15 0.0 45 10 -40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120 TA(°C) TA (°C) FIGURE 2-6: Power On Reset Threshold FIGURE 2-3: Supply Current vs. vs. Temperature. Temperature. DS22268A-page
in „Thermal Shutdown“ · Analoge Elektronik und Schaltungstechnik ·