Artikelübersicht
Letzte Änderungen
Moin Freunde,
die Schaltung im Anhang habe ich wie folgt umgesetzt:
P Kanal Mosfet ist ein IRF9540N
N Kanal Transistoren sind S9014
P Kanal Transistor ist ein S9015
Betrieben wird das Ganze an einem Atmega 1284p bei ca 62,5Khz im Fast PWM Mode.
Bis hierhin funktioniert alles wunderbar
+13,8V Z1 15V R2 1 kOhm R3 4,7kOhm T2 S IRF9540 G D R4 100 Ohm / 1W P6KE47CA B T1 BC547 E PTT-Taste zur Spule (Bias-T) P6KE47CA P6KE47CA Finder 40.51.9.012.0000
converter
dc in
HV out
AC line in
~ com
com in
out
com
discharge ckt
Figure 3.113. Depletion-mode MOSFET $Q_1$ discharges the 100 µF high voltage capacitor $C_1$ when power is removed; when powered it is inactive.
12 OC86PICC5050 C636 Q14Q14 C8585 D18D18 470µFPIC501 Semi PI4.7K 61 10µF PI4.7K1 PI4.7K1 PIQ1401MOSFET 51 330µF U3P 676P5PIR7502PIR7501 30BQ060 P61 2.2µF L 2 2IQ1402 R50502 63V DC/DC 10R 10 D s D1414 D D2 L I02 10 Q13 R PID140D LED PIR501 I03 Q161 PO/ TW GND L D111 w D13 1 MOSFET Red 1 MOSFET GND a D0 Red LED t I0 Red LED 2 PIQ1301 P O/SDS D 2 PIQ1601 R S 12 2 I02 A GND D161 A 0 Red LED Q3 Q111 MOSFET P I Q 1 1 0 1 P OREADYA D Y Q2 GND GND GND GND CC7 7 PIC77PIC7701 150pF CR62 PIR6202PIR6201 10K +12V PVDD COJ1 C7C9 J12 PIC7902 PIC7901 PIR3701 PIJ1202 C2 PICOC42 R3737 CC69 100nF GND U1515 C5757 PIC4801emi
IRF540, SiHF540 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available R (Ω) V = 10 V 0.077 Repetitive Avalanche Rated DS(on) GS 175 °C Operating Temperature RoHS* Qg(Max.) (nC) 72 COMPLIANT Fast Switching
PIR502 P1 330µF 13P I06PPIR7502PIR7501 1030BQ060 I01 2.2µF t R5050 63V DC/DC 10R D 3 n 3 D 12 L P32 0 MOSFET o PIR501 P63 MOSFET PO/ TW GND L SMD LED w SMD LED 1 g J2323 1 GND a 10 Green u P30 Red 2 PIQ1301 P O/SDS D o 2 PIJ2301 3 0 2 P62PIQ1601 R S t 1 PO/RESET D2 A o Header 2 PCR4602 SMD LED A s GND D0 Red 13 Q111 e PIR4601 13 1 MOSFET e Q1414 2 P I Q 1 1 0 1 P OREADYA D Y s D PIQ1401 MOSFET GND 12 o t I2 12 V e D1414 5 R I0 Red LED u GND GND GND b A GND COC 7 PIC77PIC7701 150pF PIR620PIR6201 10K +12V PVDD J121 C7C9 PIC7902 PIC7901
Si4920DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V (V) R (Ω) I (A) • Halogen-free According to IEC 61249-2-21 DS DS(on) D Definition 0.025 at GS = 10 V ± 6.9 ® 30 TrenchFET Power MOSFETs 0.035 at VGS = 4.5 V ± 5.8 100 % R
Technical Information VWM 200-01P Three phase full bridge V DSS = 100 V R DSon = 3.6 mΩ withTrench MOSFETs ID25 = 210 A L+ G3 G5 G1 S3 S5 S1 L1 L2 G4 G6 L3 G2 S4 S6 S2 L- MOSFETs Applications Symbol Conditions Maximum Ratings AC drives V T = 25°C to 150°C 100 V • in automobiles and trucks DSS VJ -electric
1 MHZ auf 8 MHz) ' ' ' Version mit H-Brücke mit P-Kanal- (oben im Schaltbild) und N-Kanal-Power-MOSFET (unten im Schaltbild) ' 2 Taster schalten 24-Volt-Eingänge (Drehrichtung re/li), setzen dig. Eingänge auf high: ' Taster rechts betätigt oder 24-V-Eing. rechts auf high: Motor läuft rechts (neue_richtung
reduced—the high Low-Battery Detector (LBI/LBO) switching frequencies (up to 0.5MHz) made possible by 7 MOSFET power transistors allow for tiny (<5mm diameter) 8-Pin DIP and SO Packages 5 surface-mount magnetics. Efficiency is improved to 87% 7 (10% better than with low-voltage regulators fabricated in ____
reduced—the high Low-Battery Detector (LBI/LBO) switching frequencies (up to 0.5MHz) made possible by 7 MOSFET power transistors allow for tiny (<5mm diameter) 8-Pin DIP and SO Packages 5 surface-mount magnetics. Efficiency is improved to 87% 7 (10% better than with low-voltage regulators fabricated in ____
DATA Monolithic temperature and SYMBOL PARAMETER MAX. UNIT overload protected logic level power MOSFET in a 3 pin plastic V DS Continuous drain source voltage 50 V envelope, intended as a general ID Continuous drain current 13.5 A purpose switch for automotive P D Total power dissipation 40 W systems
IRLML2502PbF HEXFET Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint V = 20V l Low Profile (<1.1mm) DSS l Available in Tape and Reel 3 D l Fast Switching R DS(on) = 0.045Ω l Lead-Free S 2 l RoHS Compliant, Halogen-Free Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switchingspeedandruggedizeddevicedesignthatHEXFET
Number: 71196 www.vishay.com 09-Jul-01 1 AN807 Vishay Siliconix R Mounting LITTLE FOOT SOT-23 Power MOSFETs Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated ambient air. Thispatternusesalltheavailable areaunderneaththe circuit and small-signal packages which have been been modified
IRLML2502PbF HEXFET Power MOSFET l Ultra Low On-Resistance l N-Channel MOSFET G 1 l SOT-23 Footprint V = 20V l Low Profile (<1.1mm) DSS l Available in Tape and Reel 3 D l Fast Switching R DS(on) = 0.045Ω l Lead-Free S 2 l RoHS Compliant, Halogen-Free Description These N-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switchingspeedandruggedizeddevicedesignthatHEXFET
UCC21710 P2 P1 Z2 C7 CO B 61301011121 P2 P2 P6CO6 P7PC1 PI2P8 PP R1 R15 OUT_L_H P6 D6 P1 CZ PI112 Mosfet_5V P P Z1 P1 PI10POGae9 9 PIP09OGate 7 NAIN_H PIP0POGate 6 GND PIP0POGte5 5 PIP0POGae4 4 P P0 P2 P2 PI P P P7 PIP0POGte3 3 CO0 CO1 C CO3 CR CR5 CO6 CO7 PI30POGae2 2 R20 R21 R22 R23 R24 R25 R26 R27 PIP02OGate 1 PIP01Mosfet_Ground P1 P0 P2 P2 PI P P1 P7 NTT 61301211121 e e Drain Q2 3 Drain Q3 e Drain Q4 e Drain Q5 e Drain Q6 e Drain Q7 e Drain Q8 e NDrain QG G P G P6 G P2 G P0 G P1 G PI G P G P6 G P2 C QQ Q2 QQ CQ CQ5
Description Features The LPW5208 is an integrated power switch for 160mΩ Low R DS(ON) High-side N-MOSFET self-powered and bus-powered Universal Series Bus Guaranteed 1200mA Continuous Current (USB) applications. A built-in charge pump is used to 2.5V to 6V Input Voltage drive the N-Channel MOSFET
: Level 3 MOSfet model with Meyer capacitance model .......................................... 129 20. Mos6: Level 6 MOSfet model with Meyer capacitance model .......................................... 132 21. Resistor
ZXM61N02F mm 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS=20V; R DS(ON) =0.18V; I =D.7A DESCRIPTION structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage
TRIMMED ZENER state-of-the-art PWM circuit together with an optimized, high voltage, Vertical Power MOSFET REFERENCE (700V/ 1.5A). ■ UNDERVOLTAGE LOCK-OUT WITH HYSTERESIS Typical applications cover offline power supplies ■ INTEGRATED START-UP SUPPLY with a secondary power capability of 25W in wide range
Charge current = 10mA 4.158 4.20 4.242 V BAT IREF PIN Voltage V V = 3.8V 1.165 1.20 1.245 V IREF BAT MOSFET ON-RESISTANCE Regulator MOSFET r r V = 4.4V, Total current = 0.3A - 0.8 1.2 Ω DS(ON) DS(ON) OUT Charger MOSFET r r V = 3.8V, charge current = 0.2A - 0.1 0.15 Ω DS(ON) DS(ON) BAT RECHARGE THRESHOLD
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