Interdigit Pause Reject (Ref. Fig 9) DO 20 mS Propagation Delay (St to b3) PS b3 13 mS Propagation Delay (St to RXO - RX3) PS RX 8 mS Transmit Timing Tone Burst Duration (DTMF Mode) BST 50 52 mS Tone Pause Duration (DTMF Mode) tPS 50 52 mS Tone Burst Duration tBSTE 100 104 mS (Extended, Call Process Mode) Tone Pause Duration PSE 100 104 mS (Extended, Call Process Mode) Tone Output High Group Output Level (RL= 10KW) V HOUT -6.1 -2.1 dBm Low Group Output Level (RL= 10KW
Frequency Impedance vs. Frequency Impedance vs. Frequency 10,000 1,000 1,000 1,000 100 100 ) 100 ) ) m m 10 m 10 h 10 h h | | | 1 | 1 | 1 | 0.1 0.1 0.1 0.01 0.01 0.01 10,000 100,000 1,000,000 10,000,000 10,000 100,000 1,000,000 10,000,000 10,000 100,000 1,000,000 10,000,000 Frequency (Hz) Frequency (Hz
It can be used in a wide variety of applications. General Features ● V DS = 100V,D =30A RDS(ON)< 28mΩ @ V GS0V (Typ:24 mΩ) Schematic diagram ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good
1.5 A CL 1.2/1.15 A(min) 2.4/2.6 A(max) L Output Leakage Current (Notes 7, 9, and 10) Output e 0V 50 mA(max) Output e b 1V 2 mA 15 mA(max) Q Quiescent Current (Note 9) 5 mA 10 mA(max) STBY Standby Quiescent ON/OFF pin e 5V (OFF) (Note 10) 85 mA Current 200/250 mA(max) iJC Thermal Resistance TO-220 or
1.5 A CL 1.2/1.15 A(min) 2.4/2.6 A(max) L Output Leakage Current (Notes 7, 9, and 10) Output e 0V 50 mA(max) Output e b 1V 2 mA 15 mA(max) Q Quiescent Current (Note 9) 5 mA 10 mA(max) STBY Standby Quiescent ON/OFF pin e 5V (OFF) (Note 10) 85 mA Current 200/250 mA(max) iJC Thermal Resistance TO-220 or
FOR STROBE FLASHER SA01, SA02, SA04, SA07 OUTLINE DRAWING Dimensions in mm 4 MAX 15+0.5 1 0 2 A A M M 8 0 1 3 I 1 2 3 4 5 M 0.5 3 1 0.5 1 4 × 3 = 12 1 5 2 4 3 1 MAIN THYRISTOR: ANODE 2 MAIN THYRISTOR: GATE MAIN AND AUX. THYRISTOR: CATHODE 3 4 AUX. THYRISTOR: GATE 5 AUX. THYRISTOR: ANODE SA SERIES APPLICATION
NORMALIZEDTO I 1.8mA C = ,A =25°C F 10mA 2 C = 50mA PULSED F 60mA PW=100µs,PRR=100pps E I A M O , 1 A ( C 3.6mA C 0.8 I = 20mA I 1.8mA V F C = C = 0.9mA F 10mA F 5mA 0.6 0.4 -50 -25 0 25 50 75 100 TA,AMBIENTTEMPERATURE(
(mA) LOAD CURRENT (mA) SUPPLY VOLTAGE (V) OUTPUT VOLTAGE vs. QUIESCENT CURRENT vs. TEMPERATURE TEMPERATURE DROPOUT VOLTAGE vs. LOAD CURRENT 4 25 5 6 104 O O 0.9 MAX604 O ) 3 3 0.8 V = 3.3V 3 ( 103 X MAX603
a CONSIDERABLY GREATERWHENTHE 12mA peak standby current and an alpha of 8 (Figure 3). SUPPRESSOR'S ALPHA IS HIGH Therefore, it has a standby power dissipation of about 0.5W on a 120V line (170V peak). A zener-diode suppressor Typical
0,8 < Ti< 2,0 ms Duration of i > A tA> 0,2ms Current fall time 0 < t < 0,4 ms f Current IA IA> 300 mA Current IA1 amplitude (max.) IA1< 800 mA Stripe is a current operated device. Applied voltage must be sufficient to develop the minimum current requirement at all operating condition. Coil requirements
SUPPORT Dissipation factor 7 For complete Curve Computation, visit: (for information only) 8.5 mW/K www.vishay.com/resistors-non-linear/curve-computation-list/ (for 25-value 680 ) Maximum power dissipation 500 mW MARKING at 55 °C Climatic category The thermistors are marked with colored bands
SUPPORT Dissipation factor 7 For complete Curve Computation, visit: (for information only) 8.5 mW/K www.vishay.com/resistors-non-linear/curve-computation-list/ (for 25-value 680 ) Maximum power dissipation 500 mW MARKING at 55 °C Climatic category The thermistors are marked with colored bands
@ I P 2.5 ± (0.625·IP/PN)V the Hall effect IP= 0 2.5 ) V ●● Unipolar voltage supply G Sensitivity 104.16 mV/A ●● Isolated plastic case recognized N S Number of secondary turns (± 0.1 %) 2000 according to UL 94-V0 R Load resistance ≥ 2 kW ●● Compact design for PCB L R IM Internal measuring resistance
94
L1 L2 L3 PE
VLT
12, 27, 18, 50, 53, 55, 1kΩ POT.
START
U V W PE
96 97 98 95
DANFOSS 17SHA153.11
M 3~
Bitte beachten: Alle Einstellungen basieren auf den Werkseinstellungen. Es sind jedoch folgende Einstellungen selbst vorzunehmen: Menü 103, Menü 104, Menü 105. Die Abschirmung der Steuerleitungen
APPLICATIONS TO220AC FREE WHEELING DIODE IN CONVERTERS (Plastic) AND MOTOR CONTROL CIRCUITS RECTIFIER IN S.M.P.S. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VRRM Repetitive Peak Reverse Voltage 1000 V VRSM Non Repetitive Peak Reverse Voltage 1000 V IFRM Repetitive Peak Forward Current p ≤10 s 150
is only 25 ℃ ±5 %RH suitable for non-condensing environment. Repeatability ±1 %RH [2] At 25 ℃ and 1m / s airflow conditions, Interchangeability Completely interchangeable to achieve a first-order response time of Response time [2] 1/e(63%) <5 S 63% required. Hysteresis ±0.3 %RH [3] In the volatile organic
is opened electrically. chip center : X= 0 m, Y= 0 m chip size : with scribe lane : 19.84 2.97mm , main chip : 19.83mm 2.96mm chip thickness : 525 m ± 25 m bump size : 68 m 33 m, 68 m 80 m bump pitch : 45 m(Min) bump height : 18 ± 3 m bump material
Frequency Crosstalk vs Frequency 12 0 –20 6 –20 –30 0 –40 B –40 B ( –6 B ( D ( L –50 T –12 R–60 T L M CH0 CH1 S –60 M–18 C O A –80 C CH1 TO CH0 –70 –24 CH0 TO CH1 –100 –30 –80 –36 –120 –90 1M 10M 100M 1G 100 1k 10k 100k 1M 10M 100M 100 1k 10k 100k 1M 10M FREQUENCY (Hz) FREQUENCY (Hz) FREQUENCY (Hz) 1407
Figure 8.6. 52/106 ST20450 0 0 rz r z r z rz 0 e i 0 B e e PS P S P S PS E c S 1 a o 1 1 B a 1 e P M 1 i 2 2 2 e S 2 1 B L E 3 3 t t t t 3 D 3 B u u n u D 0 o o o o 4 4 A A m A 4 2 e 4 i i i i e t B 5 5 S S h S 5 B a 5 M S e e B t 6 6 6 B L 6 e x x E 7 7 B a Ba 7 D 1 7 B i i i M iM 8 8 ae a e a e ae
Ring gekennzeichnete Kathode ist mit dem Minuspol zu verbinden. 210 28.02.2002 ZPD 1 Ö ZPD 75 (500 mW) Maximum ratings Grenzwerte Type Zener voltage ) Dynamic resistance Temp. Coeffiz. Reverse volt.Z-current) Typ Zener-Spanng.) Inh‰r. diff. Widerstand ...of Z-voltageSperrspanng. Z-Strom ) Z = 5 mA rzj ] at f = 1 kHz ...der Z-spanng. R = 100 nA IzmaxmA] V [V] V I = 5 mA I = 1 mA [10 / C] V [V] T = 25 C zmin zmax Z Z VZ R A ZPD 1 ) 0.71 0.82 6.5 (<8) < 50 ñ26Öñ23 ñ 550 ZPD 2.7 2,5 2.9 75 (<83) < 500 ñ9Öñ4 ñ 200 ZPD 3.0 2,8 3.2 80 (<95) < 500 ñ9Öñ3 ñ 179 ZPD 3.3 3,1
diagram: (V = 3V, V = V = 12V, I = 10uA) DD CC REF REF DISPLAY PANEL SIZE 128 X 80 7 7 7 2 0 0 1 1 3 7 7 M M M M G G M M M M O O O O E E O O O O C C . . C C S . . . . . . . . . . . . S C C . . C C SSD1325Z (SCLK) (SDIN) VCC V COMH VDD D/C# RES# CS# E(RD#) R/W#(WR#) D0 D1 REF VSS R1 C1 C2 C3 VCC VDD D/C# RES
diagram: (V = 3V, V = V = 12V, I = 10uA) DD CC REF REF DISPLAY PANEL SIZE 128 X 80 7 7 7 2 0 0 1 1 3 7 7 M M M M G G M M M M O O O O E E O O O O C C . . C C S . . . . . . . . . . . . S C C . . C C SSD1325Z (SCLK) (SDIN) VCC V COMH VDD D/C# RES# CS# E(RD#) R/W#(WR#) D0 D1 REF VSS R1 C1 C2 C3 VCC VDD D/C# RES
FLAG 816 64 VN006 SYMBOL ind2 16 128 R0 WINDOW 3 -81 89 Left 2 SYMATTR InstName L1 SYMATTR Value 5.2mH SYMATTR Type ind SYMBOL ind2 112 128 R0 SYMATTR InstName L2 SYMATTR Value 5.8µH SYMATTR Type ind SYMBOL ind2 400 128 R0 WINDOW 3 -67 79 Left 2 SYMATTR InstName L3 SYMATTR Value 5.8µH SYMATTR Type ind SYMBOL ind2 496 128 R0 SYMATTR InstName L4 SYMATTR Value 5.2mH SYMATTR Type ind SYMBOL res 560 -80 R90 WINDOW 0 0 56 VBottom 2 WINDOW 3 32 56 VTop 2 SYMATTR InstName R1 SYMATTR Value 5k SYMBOL Misc\\signal 240 -48 R0 WINDOW 3 -109 -38 Left 2 WINDOW 123 0 0 Left
- MHz- Empfangsnachsetzer mit ICs H. -J. Franke 4 226 - 227 für AM, FM, SSB und Telegrafie DK1PN 2-m-BAND Mini-Funksprechgerät für das 2-m-Band H. Werner 1 1- 10 Teil 2: Aufbau und Abgleich DC 9 MD Verbesserungen zum Mini-Funksprechgerät nach DC 9 MD 3 178 Tragbares SSB-Funksprechgerät für 144 - 146 MHz G.Otto Teil 1: Schaltungstechnik DC 6 HL 2 66 - 79 Teil 2: Aufbau und Abgleich 4 194 - 205 2-m-Handfunksprechgerät durch Umbau E.Ritter 2 104 - 111 eines 27- MHz-Gerätes DJ 4 0G Transistor-Linearverstärker für E. Berberich 3 156 - 164 Funksprechgeräte DL8 ZX TEKO-SET-Baugruppe Quarzoszillator
einer Antenne ist im Prinzip unbestimmt und eigentlich unendlich groß. Man kann durchaus mit einer 40m Drahtantenne sehr schön die Träger sowohl der Mittel-/Langwelle als auch des UKW-Rundfunks auf einem Spektrum-Analysator sehen. 2. Jede Antenne hat eine Vielzahl ausgeprägter Resonanzen (deren Breite
2SC3940A P — Ta I — V I — I C C CE C B 1.2 1.5 Ta=25˚C 1.2 ) VCE10V Ta=25˚C ( 1.0 1.25 1.0 C ) IB=10mA ) P A 9mA A ( 8mA ( o 0.8 IC 1.0 IC 0.8 a 7mA i n 6mA n s 0.6 r 0.75 r 0.6 d u 5mA u r r 4mA r w t t o 0.4 e 0.5 3mA e 0.4 r l l t C 2mA C e o 0.2 0.25 1mA 0.2 C 0 0 0 0 20 40 60 80 100 120 140 160
minimise the effect of current harmonics and transients, the average value is used. The load VAr over M cycles is then proportional to Based on the above equations, Fig. 2 are the simulation of the variation of the v and load current i due to R In Fig. 3c. it shows that the output response of this P C
des Herstellers „1350 mAh“ sehr genau überprüft werden. Weitere Diagramme mit Strom-, Spannungs- und Temperaturangaben sind verfügbar. Battery-Monitor BM-1000 Q&A Page 4 of 7 Version 1.0 Round Solutions GmbH & Co KG Tel +49
L293D ® L293DD PUSH-PULL FOUR CHANNEL DRIVER WITH DIODES 600mA OUTPUT CURRENT CAPABILITY PER CHANNEL 1.2A PEAK OUTPUT CURRENT (non repeti- tive) PER CHANNEL ENABLE FACILITY OVERTEMPERATURE PROTECTION LOGICAL "0" INPUT VOLTAGE UP TO 1.5 V (HIGH NOISE IMMUNITY) INTERNAL
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