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PDF
91201.pdf
Gate Voltage Drain Current DSS μA V DS= 48 V, VGS = 0 V, J = 150 °C - - 250 b Drain-Source On-State Resistance RDS(on) VGS = 10 V ID= 78 A - - 0.009 Ω Forward Transconductance g V = 25 V, I = 78 Ab 38 - - fs DS D S Dynamic Input Capacitance C iss - 7400 - VGS = 0 V, Output Capacitance Coss V DS= 25 V, - 3200 - pF f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss - 540 - Total Gate Charge Q g - - 190 D = 130 A, VDS = 48 V, Gate-Source Charge Q gs VGS = 10 V see fig. 6 and 13 - - 55 nC
in „Transistor für PWM 30V 50A“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
FB180SA10.pdf
t i 2.0 e e r R C100 n e O d r c ez1.5 u T = 25 C u a S J o m o - o n - (1.0 a 10 i D r , , D ) 0.5 I o V = 25V S DS D V =10V 1 20µs PULSE WIDTH R 0.0 GS 4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 T , Junction Temperature( C) V GS , Gate-to-Source Voltage (V) J Fig 3
in „Strom bis 200A schalten mit Power MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM741.pdf
model, 1.5 in series with 100 pF. Connection Diagram Metal Can Package Ceramic Dual-In-Line Package DS009341-2 Note 8: LM741H is available per JM38510/10101 DS009341-5 Order Number LM741H, LM741H/883 (Note 8), Note 9: also available per JM38510/10101 LM741AH/883 or LM741CH Note 10: also available per JM38510/10102 See NS Package Number H08C Order Number LM741J-14/883 (Note 9), LM741AJ-14/883 (Note 10) See NS Package Number J14A Dual-In-Line or S.O. Package Ceramic Flatpak DS009341-3 DS009341-6 Order Number LM741W/883 Order Number LM741J, LM741J/883, See NS Package Number W10A LM741CM, LM741CN or
in „IC LM 741 DIP8 Daternblatt“ · Mikrocontroller und Digitale Elektronik ·
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Datei
oneWire.h
* Prototypes **********************************************************************/ uint8_t ds1820_reset(GPIO_TypeDef * port, uint16_t used_pin); //reset device void ds1820_wr_bit(uint8_t wrbit, GPIO_TypeDef * port, uint16_t used_pin); //write one bit to device void ds1820_wr_byte(uint8_t wrbyte, GPIO_TypeDef * port, uint16_t used_pin); //write one byte to device uint8_t ds1820_re_bit(GPIO_TypeDef * port, uint16_t used_pin); //read one bit from device uint8_t ds1820_re_byte(GPIO_TypeDef * port, uint16_t used_pin); //read one byte from device float ds1820_read_temp(GPIO_TypeDef
in „Timingproblem mit Onewire und STM32“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AN-1057.pdf
shutdown of the buses. on the enable lines, I CC drops to less driver (>150˚C junction temperature). than 10 µA. DS3697 — Repeater pinout: Special DS36277 — Fail-safe transceiver with DS36C280 — Ultra-low-power CMOS pinout that internally connects a active-low driver enable: Similar to the transceiver with
in „Störung bei RS485“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AN-1057.pdf
shutdown of the buses. on the enable lines, I CC drops to less driver (>150˚C junction temperature). than 10 µA. DS3697 — Repeater pinout: Special DS36277 — Fail-safe transceiver with DS36C280 — Ultra-low-power CMOS pinout that internally connects a active-low driver enable: Similar to the transceiver with
in „RS485-Signale entstören“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AN-1057.pdf
shutdown of the buses. on the enable lines, I CC drops to less driver (>150˚C junction temperature). than 10 µA. DS3697 — Repeater pinout: Special DS36277 — Fail-safe transceiver with DS36C280 — Ultra-low-power CMOS pinout that internally connects a active-low driver enable: Similar to the transceiver with
in „RS485 FailSafe Beschaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AN-1057.pdf
shutdown of the buses. on the enable lines, I CC drops to less driver (>150˚C junction temperature). than 10 µA. DS3697 — Repeater pinout: Special DS36277 — Fail-safe transceiver with DS36C280 — Ultra-low-power CMOS pinout that internally connects a active-low driver enable: Similar to the transceiver with
in „Stoersicherheit“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AN-1057.pdf
shutdown of the buses. on the enable lines, I CC drops to less driver (>150˚C junction temperature). than 10 µA. DS3697 — Repeater pinout: Special DS36277 — Fail-safe transceiver with DS36C280 — Ultra-low-power CMOS pinout that internally connects a active-low driver enable: Similar to the transceiver with
in „RS485 Abschlusswiderstände“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AN1154_Precision_Temperature_Sensing_with_RTD_Circuits.pdf
sign, MCP3551) 0.0084 -200 0 200 400 600 800 Temperature (°C) FIGURE 3: T RES vs. RTD Resistance. DS01154A-page 2 © 2008 Microchip Technology Inc. AN1154 The MCP3551 22-bit differential ADC characteristics is optimum for this type of application. There are few 60 0.10 specifications that must be carefully
in „PT100 Zehntel Grad Auflösung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BF1009SW_2001_INF.pdf
Symbol Values Unit min. typ. max. DC characteristics Drain-source breakdown voltage 16 - - V V(BR)DS ID= 300 µA, V G1S = 0 V, G2S = 0 V Gate 1 - source breakdown voltage +V(BR)G1SS 8 - 12 +IG1S = 10 mA, VG2S = 0 V, VDS = 0 V Gate 2 source breakdown voltage ±V 10 - 16 (BR)G2SS ±IG2S = 10 mA, VG1S = 0
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Datei
ds18s20.h
#ifndef DS18S20_H_ #define DS18S20_H_ #include <stdint.h> /** * @file ds18S20.h * @brief * Header file of DS18S20 library. It contains the prototypes of all * functions available in the library, definitions of
in „Timerberechnung die hunderste“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ZXBM5210.pdf
( N D60.0 S40 t D n50.0 tD r40.0 12V 18V n 30 u r C30.0 u 20 b C n20.0 b 10 t a S10.0 3V S 0 0.0 2 4 6 8 10 12 14 16 18 20 -50 -25 0 25 50 75 100 125 SupplyVoltage (V) Temperature (°C) StandbySupplyCurrent vs. Supply Voltage StandbySupplyCurrent vs. Temperature Under Voltage
in „Overcurrent Protecion (OCP) bei integrierten Voll-/Halbbrücken“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HM2302A.PDF
Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±10 V Drain Current-Continuous ID 2.9 A Drain Current-Pulsed (Note 1) DM 10 A Maximum Power Dissipation PD 1 W Operating Junction and Storage Temperature Range TJ,TSTG -
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Datei
blynk.txt
set to PUSH. This means // that you define how often to send data to Blynk App. void sendSensor() { DS18B20.requestTemperatures(); float t = DS18B20.getTempCByIndex(0); Serial.print(t); Serial.println("ºC"); if (isnan(t)) { Serial.println("Failed to read from DS18B20 sensor!"); Serial.print(t); Serial.println
in „Messwert wird vom esp32 nicht übertragen.“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AN734.pdf
C protocol byte sent to the master device was a data byte when for designating the upper half of a 10-bit address. the D/A bit is set. When an address match occurs, the SSP module will © 2008 Microchip Technology Inc. DS00734B-page 3 AN734 WCOL (SSPCON<7>) clock stretching automatically when data is
in „I2C example code“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ds18b20.h
/*! * \file ds18b20.h * \brief DS18B20 Temperatursensor lesen/schreiben, h-Datei * \author Joerg S. * \date 1.2007 */ #ifndef DS18B20_H #define DS18B20_H 1 //////////////////////////////////////////////////////////
in „Wer hat DS18x20 an MSP430 am laufen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PI4IOE5V9555.pdf
Current VOL0.4V 3 — — mA I Leakage Current V = VCC = GND -1 — 1 μA L I Ci Input Capacitance VI= GND — 6 10 pF PI4IOE5V9555 www.diodes.com August 2021 Document Number DS41303 Rev 1-2 3 ©Diodes Incorporated PI4IOE5V9555 Symbol Parameter Conditions Min. Typ. Max. Unit I/Os V IL Low Level Input Voltage — -0.5
in „Schachbrettposition Erkennung“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ds1820.asm
0x48 .equ iwire_cmd_recall_ee = 0xb8 .equ iwire_cmd_read_power_supply = 0xb4 .equ iwiremaxdevice = 10 ; begrenzung für anzahl zu findender devices, hängt mit sram-größe zusammen .equ ds1820converttime = 7 ; wandlungszeit ds1820 in 100ms, laut dallas max. 750ms wandlungsdauer .equ ds1820familycode = 0x10 ; familycode des ds1820 .equ displaywaittime = 10 ; anzeigezeit für jeden einzelnen temperaturwert im display in 100ms ; ; ************************************************************************** ; ; ; grundsätzliche
in „mehere ds1820 an einem bus“ · Mikrocontroller und Digitale Elektronik ·
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Datei
DS7505.c
); twi_write(pointer); ds_pointer = pointer; } void ds_set_address(unsigned char address) { ds_address = address; } unsigned char ds_get_configuration(void) { unsigned char retval; if(ds_pointer != ds_pointer_configuration) {
in „define in c für asm mit rückgabewert“ · Softwareentwicklung ·
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Datei
Test_ESP8266_DS18B20.ino
{ tempC = tempC - 0.01; } Serial.print("Temperatur Celsius: "); Serial.println(tempC); if(tempC < 10.0) zu_kaltC = 1; } return String(tempC); } /* Fkt um die DS18B20 Temperatur zu messen, umgewandelt in °F */ String readDSTemperatureF() { float tempF = 0; err_tempF = 0; zu_kaltF = 0; sensors.requestTemperatures
in „HTML Anzeige - Farbe Meldetext ändern“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlml6402pbf.pdf
( -3.50V ( -3.50V n -2.70V n -2.70V e -2.50V e -2.50V u BOTTOM-2.25V u BOTTOM-2.25V C C c c u u o 10 o 10 - -2.25V - - - -2.25V i i r r D D ,D , - - 20μs PULSE WIDTH 20μs PULSE WIDTH 1 TJ= 25 C TJ= 150 C 0.1 1 10 100 10.1 1 10 100 -VDS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V
in „TP4056 Polarity protection“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
datasheet.pdf
200 .01 .1 1 10 50 V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE S 20 S 400 T D = 0.D I [Cont.] E O E ( V DS=40V P T =+150°C T =+25°C E 16 A 100 J J G V DS=100V ( T N L E 50 V 12 R E VDS =160V U C C U I O 8 A 10 - D O E - S 5 T 4 E A V , R G ,R V 0 ID 1 0 200 400 600 800 1000 1200 1400 0 0.4 0.8 1.2 1.6 2.0
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PDF
fm600tu-07a_e.pdf
Drain cutoff current VDS = VDSS , GS = 0V — — 1 mA V GS(th) Gate-source threshold voltage D = 30mA, V DS = 10V 4.7 6 7.3 V IGSS Gate leakage current VGS = VGSS , DS = 0V — — 1.5 µA rDS(ON) Static drain-source D = 300A T ch= 25°C — 0.53 0.73 (chip) On-state resistance VGS = 15V T ch= 125°C — 0.87 — mΩ V
in „Wechselrichter mit MOSFET Endstufe“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
3003E.pdf
K1 103/2KV CN2 CN4 R24 R23 CON4 CON4 LR2 2A 30k 30k N 120 C940 C940 Adjustboard FUSE2 -5V -5V IC1 R10 R9 C +8V 7805 +5V VREF 10k 10k C 1 3 R1 V V 1 R22 R21 IN OUT 180 GND 1M 1M 3 CN1 CN1 D1 C1 C5 2 C3 C7 Mother board -5V +5V -5V +5V 2200u 1000u C11 C12 1 7.3V 1 104 104 10u 1 1 2 2 2 104 0V IC4D R39 IC4C
in „Suche Schaltplan Netzgerät QJ3003E“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
QJ3003E_S_netzteil.pdf
K1 103/2KV CN2 CN4 R24 R23 CON4 CON4 LR2 2A 30k 30k N 120 C940 C940 Adjustboard FUSE2 -5V -5V IC1 R10 R9 C +8V 7805 +5V VREF 10k 10k C 1 3 R1 V V 1 R22 R21 IN OUT 180 GND 1M 1M 3 CN1 CN1 D1 C1 C5 2 C3 C7 Mother board -5V +5V -5V +5V 2200u 1000u C11 C12 1 7.3V 1 104 104 10u 1 1 2 2 2 104 0V IC4D R39 IC4C
in „QJE 3005E III Schaltbild“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
main.c
Fehler in Promille #define Dev24C02 0xA2 // device address of EEPROM 24C02, see datasheet #define DS1621_Write 0x9E #define DS1621_Read 0x9F void warte() { int i; for (i=0;i<10;i++) _delay_ms(20); } int main(void) { unsigned char ret, TempH, TempL, data, test; int i; DDRB = 0xff; // use all pins on
in „DS1621 über Twi mit Atmega8“ · Mikrocontroller und Digitale Elektronik ·
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PDF
datasheet.pdf
Adc) 2.0 2.6 4.0 Vdc DS GS D Threshold Temperature Coefficient (Negative) — 5.3 — mV/⋅C Static Drain–Source On–ResistancGS(V= 10 Vdc,DI = 15 Adc) RDS(on) — 0.067 0.08 Ohm Drain–Source On–Voltage V Vdc DS(on) (VGS = 10 Vdc,DI
in „verstärkerschaltung“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
8n1_no_crc_disassembled.a51
endM _ACK EQU 06 _BUFSIZE EQU 20 _ClearScr EQU 1Fh ;**************************************** DSEG at 10h curState: ds 1 ;10h Byte11: ds 1 StrLen: ds 1 ;12h chksum: ds 1 ;13h RecPtr: ds 1 ;14h RecPtr CursorPos: ds 1 ;15h LinePtr RecBuffer: ds _BUFSIZE+1 ;16h Line1: ds _BUFSIZE ;2Bh Line 1 Line2: ds _BUFSIZE
in „VFD "Kundendisplay"-Ansteuerung“ · Mikrocontroller und Digitale Elektronik ·
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Datei
0217b-DS10-SD-sektor_auslesen-als_antwort_senden.c
// ******************* // * Datenspeicher 10 * // ******************* // Flüssigkristallanzeige LMK62R125A1 // DS18B20 NR. 13,14,15,16 an 63-10 Adresse 0x18 // E32-868TD Funk ab 29.8.21 //Änderungen: /*******************************************
in „512 Byte-Sektor einer SD-Karte mit E32-868T drahtlos übertragen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MEM4X16E43VTW-5.pdf
ns DS 0 0 ns tACH 12 15 ns tOD 0 12 0 15 ns t t AR 38 45 ns OE 12 15 ns tASC 0 0 ns tOEH 8 10 ns tASR 0 0 ns tRAC 50 60 ns t t AWD 42 49 ns RAD 9 12 ns tCAC 13 15 ns tRAH 7 10 ns tCAH 8 10 ns tRAS 50 10,000
in „SN74ABTH16460 4-to-1 Multiplexed/Demultiplexed Transceivers with 3-State Outputs“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irl2203n.pdf
DSSJ Breakdown Voltage Temp. Coefficient––– 0.029 ––– V/°C Reference to 25°CD I = 1mA ––– ––– 7.0 V = 10V, I = 60A RDS(on) Static Drain-to-Source On-Resistance m GS D ––– ––– 10 VGS= 4.5V, D = 48A V Gate Threshold Voltage 1.0 ––– ––– V V = V , I = 250µA GS(th) DS GS D gfs Forward Transconductance 73 –––
in „Saito Pro Charger Batterieladegerät - Mikrocontroller ATmel ATTINY26L defekt?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
L6203.pdf
driven by IN1 and IN2. 3 2,3,9,12, 3 N.C. Not Connected 18,19 4,5 – 4 GND Common Ground Terminal – 1, 10 5 6 GND Common Ground Terminal 6,7 – 6 GND Common Ground Terminal 8 – 7 N.C. Not Connected 9 4 8 1 OUT2 Ouput of 2nd Half Bridge 10 5 9 2 Vs Supply Voltage 11 6 10 3 OUT1 Output of first Half Bridge
in „Schrittmotorsteuerung verbessern“ · Mikrocontroller und Digitale Elektronik ·
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PDF
cd00000089-1795323.pdf
driven by IN1 and IN2. 3 2,3,9,12, 3 N.C. Not Connected 18,19 4,5 – 4 GND Common Ground Terminal – 1, 10 5 6 GND Common Ground Terminal 6,7 – 6 GND Common Ground Terminal 8 – 7 N.C. Not Connected 9 4 8 1 OUT2 Ouput of 2nd Half Bridge 10 5 9 2 Vs Supply Voltage 11 6 10 3 OUT1 Output of first Half Bridge
in „[V] Motortreiber 2x L6203 Multivatt11 und 5x Siemens TLE4205“ · Markt ·
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PDF
cd00000089-1795323.pdf
driven by IN1 and IN2. 3 2,3,9,12, 3 N.C. Not Connected 18,19 4,5 – 4 GND Common Ground Terminal – 1, 10 5 6 GND Common Ground Terminal 6,7 – 6 GND Common Ground Terminal 8 – 7 N.C. Not Connected 9 4 8 1 OUT2 Ouput of 2nd Half Bridge 10 5 9 2 Vs Supply Voltage 11 6 10 3 OUT1 Output of first Half Bridge
in „[V] 2St. DMOS Full Bridge L6203 Multiwatt 11 Gehäuse“ · Markt ·
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PDF
FMMT618.pdf
1 10 100 1k Pulse Width (s) Pulse Power Dissipation FMMT618 www.diodes.com © Diodes Incorporated Document number: DS33111 Rev. 5 - 2 A Product Line of Diodes Incorporated FMMT618 Electrical Characteristics
in „Maximal Strom von Atmel-MCU erhöhen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Hoa2498_1.pdf
Reflective Sensor Fig. 1 IRED Forward Bias Characteristics Fig. 2 Non-Saturated Switching Time vs gra_073.ds4 Load Resistance gra_079.ds4 100 1000 90 A Pulsed s m 80 - t 70 condition e 100 e 60 T = 80°C i r A t Photodarlington c 50 s r 40 TA= 25°C o a 30 s 10 r e F 20 T A -40°C R Phototransistor 10 0 1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 100 1000 10000 Forward voltage - V Load resistance - Ohms Fig. 3 Dark Current vs Fig. 4 Collector Current vs Temperature gra_303.cdr Ambient Temperature gra_076.ds4 n 1.2 e u 1.0 c t 0.8 e l 0.6 c d
in „HOA2498_001 reflective sensor zu verschenken“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Hoa2498_1.pdf
Reflective Sensor Fig. 1 IRED Forward Bias Characteristics Fig. 2 Non-Saturated Switching Time vs gra_073.ds4 Load Resistance gra_079.ds4 100 1000 90 A Pulsed s m 80 - t 70 condition e 100 e 60 T = 80°C i r A t Photodarlington c 50 s r 40 TA= 25°C o a 30 s 10 r e F 20 T A -40°C R Phototransistor 10 0 1 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 100 1000 10000 Forward voltage - V Load resistance - Ohms Fig. 3 Dark Current vs Fig. 4 Collector Current vs Temperature gra_303.cdr Ambient Temperature gra_076.ds4 n 1.2 e u 1.0 c t 0.8 e l 0.6 c d
in „EEproms 24C32 zu verschenken“ · Mikrocontroller und Digitale Elektronik ·
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PDF
HMYX_D8575N.pdf
DSS Drain-Source Breakdown Voltage V GSV I =D50μA 30 V DSS Zero Gate Voltage Drain Current(Tc=25℃) V DS0V, V =0GS 1 μA GSS Gate-Body Leakage Current VGS±20V, V =DS ±100 nA V GS(th) Gate Threshold Voltage VDSV ,GS =D50μA 1.0 1.5 2.5 V VGS10V, I D15A 6.7 8.0 mΩ R DS(ON) Drain-Source On-State Resistance 2
in „Lidl kann auch anders (Lötstation)“ · Mechanik, Gehäuse, Werkzeug ·
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PDF
EE93LC46A.pdf
1 0 X X X X — (RDY/BSY) 9 EWDS 1 00 0 0 X X X X — HIGH-Z 9 EWEN 1 00 1 1 X X X X — HIGH-Z 9 READ 1 10 A5 A4 A3 A2 A1 A0 — D15 - D0 25 WRITE 1 01 A5 A4 A3 A2 A1 A0 D15 - D0 (RDY/BSY) 25 WRAL 1 00 0 1 X X X X D15 - D0 (RDY/BSY) 25 2000 Microchip Technology Inc. DS21173E-page 3 93LC46A/B 3.0 FUNCTIONAL
in „Programieren eines 93LC46A (EEPROM) mit einem Attiny 13A“ · Mikrocontroller und Digitale Elektronik ·
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Datei
vfd-ds1307-2.bas
Setdate: _day = Makebcd(_day) : _month = Makebcd(_month) : _year = Makebcd(_year) I2cstart I2cwbyte Ds1307w I2cwbyte 4 I2cwbyte _day I2cwbyte _month I2cwbyte _year I2cstop Waitms 10 Return Setweekday: I2cstart I2cwbyte Ds1307w I2cwbyte 3 I2cwbyte Weekday I2cstop Waitms 10 Return Settime: _sec = Makebcd(_sec) : _min = Makebcd(_min) : _hour = Makebcd(_hour) I2cstart I2cwbyte Ds1307w I2cwbyte 0 I2cwbyte _sec I2cwbyte _min I2cwbyte _hour I2cstop Waitms 10 Return End '###################### Ziffern: Data &B00111111 , &B00000110 , &B01011011 , &B01001111 , &B01100110 , &B01101101
in „Schaltplan für IW-18 Uhr mit zwei UDN2981“ · Mikrocontroller und Digitale Elektronik ·
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PDF
30262e.pdf
Issue Command 8 (begin data) 9. Delay 10 ms 10. Issue Command 1 (toggle select even rows) 11. Issue Command 7 (toggle select even rows) Note: All BULK ERASE operations must take place at 4.5 to 5.5DD range. DS30262E-page 8 2002 Microchip
in „PGD und PGC beim PIC16F84A“ · Mikrocontroller und Digitale Elektronik ·
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PDF
564746-da-01-en-MOSFET_N_KA_800V_STP4N80K5_TO_220AB_STM.pdf
current GS = 0) VDS = 800 V, TC=125 °C 50 µA Gate-body leakage IGSS current (V = 0) VGS = ± 20 V ±10 µA DS V Gate threshold voltage V = V , I = 100 µA 3 4 5 V GS(th) DS GS D Static drain-source on- RDS(on) VGS = 10 V, D = 1.5 A 2.1 2.5 Ω resistance Table 5. Dynamic Symbol Parameter Test conditions Min
in „Anodenspannungsstabilisierung für Röhrenverstärker mit IRF840 als Längsregler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DMG1023UV.pdf
1.5 Ω R DS (ON) VGS = -1.8V, D = -150mA - 20 VGS = -1.7V, D = -100mA - 25 V = -1.5V, I = -100mA GS D Forward Transfer Admittance |Yfs - 0.9 - S VDS = -10V, D = -250mA Diode Forward Voltage V -0.8 -1.2 V V = 0V,
in „MOSFET Ersatztypen für DMG1024 u. DMG1023 gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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Datei
harware_config_default.txt
has significantly differnt pin mappings //#define EXPLORER_16 // PIC24FJ128GA010, PIC24HJ256GP610, dsPIC33FJ256GP710 PIMs //#define DSPICDEM11 //#define OLIMEX_MAXI // based on PIC18F97J60 //#define OLIMEX_WEB //#define OLIMEX_MINI // based on PIC18F25J10 #define OLIMEX_P67J60 // based on PIC18F67J60
in „I/O Pins konfigurieren“ · Mikrocontroller und Digitale Elektronik ·
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Datei
ON_OFF.bas
Display ' Hier jetzt noch der Geist Spidata = T_st(n_2) Call Sendspi2display(spidata) Next N_1 Dog_ds = 0 Dispadr = &B10000000 + 16 ' Wir schreiben erst mal in die Grossen Zeichen Call Sendspi2display(dispadr) ' Schreibposition waehlen Dog_ds = 1 ' Jetzt kommen wirkliche Zeichen! For N_1 = 1 To 16 N_
in „Noch ein Taschenrechner auf ATMega Basis“ · Projekte & Code ·
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PDF
OB2502.PDF
resistance OB2502RCP-H 3.3 Ώ OB2502TCP-H 2.2 Ώ ©On-Bright Electronics Confidential Datasheet OB_DOC_DS_2502xA2 - 5 - OB2502x High Precision CC/CV Primary-Side Power Switch CHARACTERIZATION PLOTS VDD vs Istatic 800 ) 700 u 600 i 500 a 300 I 200 100 0 2 4 6 8 10 12 14 16 18 20 22 VDD(V) UVLO_7(ON)(V) vs
in „SNT Gartenbeleuchtung defekt, pulst aber“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
P-FET.pdf
0.23 Ω V GS=-4.5V, D =-0.8A Forward Transconductance (3) g 1.1 S V =-10V,I =-0.8A fs DS D DYNAMIC (3) Input Capacitance C iss 330 pF V DS=-25 V, GS =0V, Output Capacitance C oss 120 pF f=1MHz Reverse Transfer Capacitance C 45 pF rss SWITCHING (2) (3) Turn-On Delay Time td
in „Review: Spannungsversorgung 3V->5V + Ein/Ausschalter“ · Mikrocontroller und Digitale Elektronik ·
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Datei
DS1037.txt
Beschreiben nach einem Reset: ds1307_writereg(0,0x00110000b); // sekunden ds1307_writereg(1,0x01000000b); // minuten ds1307_writereg(2,0x00000011b); // stunden ds1307_writereg(3,0x00000101b); // wochentag ds1307_writereg(4,0x00001001b
in „Probleme mit DS1307“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MBI5026.pdf
“H”) OE - OUTn tpLH3 - 50 150 ns CLK - SDO pLH 15 20 - ns V DD.0 V CLK - OUTn tpHL1 - 50 100 ns V DS.8 V Propagation Delay Time LE - OUTn tpHL2 V IH DD - 50 100 ns V ILND (“H” to “L”) OE - OUTn tpHL3 - 20 100 ns Rext00 Ω CLK - SDO tpHL V L4.0 V 15 20 - ns R L52 Ω CLK tw(CLK) 20 - - ns C L10 pF Pulse
in „Vorschläge für Led-Treiber?“ · Mikrocontroller und Digitale Elektronik ·