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irl2203npbf.pdf
6000 VGS = 0V, f = 1MHz D = 60A Ciss= Cgs + Cgd ,Cds SHORTED C = C ) V = 24V 5000 Crss= Cgd + C ( V DS= 15V oss ds gd g 12 DS F t ( 4000 o e V n Ciss c 9 t u c 3000 o p o a - 6 , 2000 Coss t C G , S 3 1000 VG Crss FOR TEST CIRCUIT 0 0 SEE FIGURE 13 1 10 100 0 20 40 60 80 V DS , Drain-to-Source Voltage
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irl1404.pdf
www.irf.com 3 IRL1404 20 10000 VGS = 0V, f = 1MHz ID= 95A Ciss = Cgs+ Cgd , Cds SHORTED C = C ) V DS = 32V Crss = Cgd+ C ( V DS = 20V 8000 oss ds gd g 16 F t ( C iss o e V n 6000 c 12 t u c S p o a 4000 - 8 , t C G , 2000 C oss G 4 V FOR TEST CIRCUIT C rss SEE FIGURE 13 0 0 1 10 100 0 100 200 300 400
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FCPF11N60B.pdf
Breakdown V = 0 V, I = 11 A -- 700 -- V 1 DS Voltage GS D N I V = 600 V, V = 0 V 6 DSS Zero Gate Voltage Drain Current DS GS -- -- 1 µA 0 V DS = 480 V, C = 125°C -- -- 10 µA GSSF Gate-Body Leakage Current, Forward V GS = 30 V, DS = 0 V -- -- 100 nA I Gate-Body Leakage Current, Reverse V = -30 V, V = 0 V -- -- -100 nA GSSR GS DS On Characteristics VGS(th) Gate Threshold Voltage V DS = VGS, D = 250 µA 3.0 -- 5.0 V R Static Drain-Source DS(on) V GS = 10 V,DI = 5.5 A -- 0.32 0.38 Ω On-Resistance gFS Forward Transconductance V DS
in „Kühlkörper Dimensionieren“ · Mikrocontroller und Digitale Elektronik ·
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IRLZ34.pdf
Normalized On-Resistance Vs. Temperature IRLZ34N 1400 15 V GS = 0V, f = 1MHz ID = 16A C iss= C gs + Cgd , C ds SHORTED ) 1200 C rss= C gd ( V = 44V e DS C iss C oss= C ds + Cgd g 12 VDS = 28V ) t F 1000 o ( V e e c r 9 a 800 u i o a C oss - p 600 - a e 6 , a C 400 G , C S rss G 3 200 V FOR TEST CIRCUIT SEE FIGURE
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IRL1004.pdf
GS = 0 V Single Pulse 0.0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 1 10 100 V SD ,Source-to-Drain Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area ForwardVoltage 4 www.irf.com IRL1004 140 R V D LIMITED BY PACKAGE DS 120 V GS D.U.T. )100 RG ( -VDD
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irlz34n.pdf
Normalized On-Resistance Vs. Temperature IRLZ34N 1400 15 V GS = 0V, f = 1MHz ID = 16A C iss= C gs + Cgd , C ds SHORTED ) 1200 C rss= C gd ( V = 44V e DS C iss C oss= C ds + Cgd g 12 VDS = 28V ) t F 1000 o ( V e e c r 9 a 800 u i o a C oss - p 600 - a e 6 , a C 400 G , C S rss G 3 200 V FOR TEST CIRCUIT SEE FIGURE
in „IRLZ34N anschliessen ?“ · Mikrocontroller und Digitale Elektronik ·
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axpert_vm_iii5000__c.pdf
CSD19505KCS (VMIII-3200)Resistor GS: 11.75k Short or explosion TK100E08N1 (VMIII-5200) GD: 115.8k DS: OL Diode SD: 0.463V DS: OL Note1: When you use the multimeter to measure the resistor of the transistor, because of the capacitor in the circuit, it will cause the changing of the values when you measure
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DS1337-DS1337C.pdf
Fax/Printer, Copier) PART TEMP RANGE PIN-PACKAGE TOP Medical (Glucometer, Medicine Dispenser) MARK† DS1337+ -40°C to +85°C 8 DIP (300 mils)DS1337 Telecommunications (Router, Switch, Server) DS1337S+ -40°C to +85°C 8 SO (150 mils) DS1337 Other (Utility Meter, Vending Machine, Thermostat, Modem) DS1337U
in „[V] DALLAS RTCs : 10x DS1337S+ SO8 und 4x DS1337U+ 8 uSOP“ · Markt ·
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24lc16.pdf
E-temp range) (Note 1) SDA and SCL fall time TF — 300 ns (Note 1) START condition hold time T HDSTA 600 — ns 4.5V≤ Vcc≤ 5.5V 4000 — 2.5V≤VCC ≤ 5.5V (E-temp range) START condition setup time T SUSTA 600 — ns 4.5V≤ Vcc≤ 5.5V 4700 — 2.5V≤VCC ≤ 5.5V (E-temp range) Data input hold time THD DAT 0 — ns (Note
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si9934bdy.pdf
, D = −250 mA −0.6 −1.4 V Gate-Body Leakage IGSS VDS= 0 V, GS = "8 V "100 nA V = −12 V, V = 0 V −1 DS GS Zero Gate Voltage Drain Current DSS V = −12 V, V = 0 V, T = 55_C −5 mA DS GS J On-State Drain Current I V = −5 V, V = −4.5 V −20 A D(on) DS GS V = −4.5 V, I = −6.4 A 0.028 0.035 Drain-Source On-State
in „P-MOS Vgs positiv?“ · Mikrocontroller und Digitale Elektronik ·
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RequiresAcrobat6-5.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
in „Power Mosfet Hexfet wie ansteuern ?“ · Analoge Elektronik und Schaltungstechnik ·
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Micrel.pdf
ppm/°C Temperature Coefficient — 80 200 MIC2915x OUT = 100 mA — 220 — MIC2915x OUT = 750 mA — 350 600 MIC2915x OUT = 1.5A — 80 175 MIC2930x OUT = 100 mA — 250 — MIC2930x I = 1.5A OUT Dropout Voltage — 370 600 MIC2930x OUT = 3A ∆V = –1% (Note 5) mV OUT — 125 250 MIC2950x OUT = 250 mA — 250 — MIC2950x
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irl630.pdf
On-Resistance GS D ––– ––– 0.50 V GS= 4.0V, D = 4.5A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V V DS= VGS ,DI = 250µA gfs Forward Transconductance 4.8 ––– ––– S V DS= 50V, D = 5.4A DSS Drain-to-Source Leakage Current ––– ––– 25 µA V DS= 200V, VGS = 0V ––– ––– 250 V DS= 160V, VGS = 0V, J = 125°C GSS
in „Kontrolle der Kühlkörperberechnung“ · Mikrocontroller und Digitale Elektronik ·
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P-MOSFETsi3445dv.pdf
(G-S) MOSFET FEATURES PRODUCT SUMMARY V (V) R (Ω) I (A) • Halogen-free According to IEC 61249-2-21 DS DS(on) D Definition 0.042 at GS = - 4.5 V ± 5.6 TrenchFET Power MOSFETs - 8 0.060 at GS = - 2.5 V ± 4.7 1.8 V Rated 0.080 at GS = - 1.8 V ± 2.9 Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View
in „richtiger n-Kanal MOSFET, 3,3V soll 5V und 100mA schalten“ · Analoge Elektronik und Schaltungstechnik ·
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SI4946BEY.pdf
A 0.041 0.052 a g V = 15 V, I = 5.3 A 24 S Forward Transconductance fs DS D Dynamic b Input Capacitance C iss 840 C V = 30 V, V = 0 V, f = 1 MHz Output Capacitance oss DS GS 71 pF Reverse Transfer Capacitance C rss 44 V DS = 30 V, GS = 10 V,DI = 5.3 A 17 25 Total Gate Charge
in „Frage zu Ic SI4948“ · Analoge Elektronik und Schaltungstechnik ·
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MRF272L.pdf
otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS Gate Threshold Voltage DS = 10 V, D = 100 mA) VGS(th) 1.5 2.5 4.5 Vdc Drain–Source On–Voltage (VGS = 10 V,DI = 5.0 A) V DS(on) 0.5 0.9 1.5 Vdc Forward Transconductance (VDS = 10 V,DI = 2.5 A) g fs 3.0 3.75 — mhos DYNAMIC CHARACTERISTICS Input Capacitance DS = 28 V, GS = 0, f = 1.0 MHz) Ciss — 135 — pF Output Capacitance (DS = 28 V, GS = 0, f = 1.0 MHz) Coss — 140 — pF Reverse Transfer Capacitance (DS= 28 V, VGS= 0, f = 1.0 MHz) Crss — 17 — pF FUNCTIONAL
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MCP3221.pdf
T 600 — — ns HD:STA START condition setup time T SU:STA 600 — — ns Data input hold time THD:DAT 0 — 0.9 ms Data input setup time TSU:DAT 100 — — ns STOP condition setup time T 600 — — ns SU:STO STOP condition
in „Suche Bauteilbezeichnung 5-Pin SOT-23 mit "S1SD" Marking“ · Mikrocontroller und Digitale Elektronik ·
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LDO.pdf
regulations in DC-DC converters. This device includes current limit, SOA and thermal protections. DS12022 - Rev 6 - April 2020 www.st.com For further information contact your local STMicroelectronics sales office. LDL1117 Diagram 1 Diagram Figure 1. Block diagram DS12022 - Rev 6 page 2/23 LDL1117 Pin
in „STM32 - 5V tolerante Pins bei Startup“ · Mikrocontroller und Digitale Elektronik ·
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irf7389.pdf
www.irf.com IRF7389 N-Channel 1200 20 V GS = 0V, f = 1MHz ID= 5.8A C iss= C gs + Cgd , Cds SHORTED V DS = 15V C rss= C gd ) C oss= C ds + Cgd ( 16 e F 900 C a ( iss o e V c e 12 a C oss r c 600 o a - a t 8 C t , a C G 300 C rss ,S G 4 V 0 A 0 1 10 100 0 10 20 30 40 Q , Total Gate Charge (nC) V DS , Drain-to-Source
in „Mini-FET's“ · Analoge Elektronik und Schaltungstechnik ·
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IRF7389_N-P-Channel_30V_5.3A_0.058Ohm.pdf
www.irf.com IRF7389 N-Channel 1200 20 V GS = 0V, f = 1MHz ID= 5.8A C iss= C gs + Cgd , Cds SHORTED V DS = 15V C rss= C gd ) C oss= C ds + Cgd ( 16 e F 900 C a ( iss o e V c e 12 a C oss r c 600 o a - a t 8 C t , a C G 300 C rss ,S G 4 V 0 A 0 1 10 100 0 10 20 30 40 Q , Total Gate Charge (nC) V DS , Drain-to-Source
in „DC-Motor mit HIP2101“ · Mikrocontroller und Digitale Elektronik ·
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irf7389.pdf
www.irf.com IRF7389 N-Channel 1200 20 V GS = 0V, f = 1MHz ID= 5.8A C iss= C gs + Cgd , Cds SHORTED V DS = 15V C rss= C gd ) C oss= C ds + Cgd ( 16 e F 900 C a ( iss o e V c e 12 a C oss r c 600 o a - a t 8 C t , a C G 300 C rss ,S G 4 V 0 A 0 1 10 100 0 10 20 30 40 Q , Total Gate Charge (nC) V DS , Drain-to-Source
in „H-Brücke am µC“ · Analoge Elektronik und Schaltungstechnik ·
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irlz24n.pdf
Temperature IRLZ24N 15 800 V = 0V, f = 1MHz ID = 11A C GS = C + C , C SHORTED V = 44V C iss= Cgs gd ds ) DS rss gd ( VDS = 28V C C oss= Cds + Cgd e12 ) 600 iss t F o ( V c e 9 n r i 400 o a Coss - p - C t 6 , a C , 200 S Crss G3 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 4 8 12 16 20 V DS , Drain-to-Source
in „IR2127 Beschaltung als Low Side Schalter + Mosfet“ · Mikrocontroller und Digitale Elektronik ·
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irlz34npbf.pdf
On-Resistance Vs. Temperature IRLZ34NPbF 1400 15 V GS = 0V, f = 1MHz ID = 16A C iss= Cgs + C gd, C ds SHORTED ) 1200 C rss= C gd ( ▯VDS = 44V Ciss C oss= C ds+ C gd e 12 ▯VDS = 28V g F 1000 l ( o e e n 800 r 9 t u c Coss S p 600 o a - 6 , t C G 400 , C▯rss S 3 VG 200 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 4 8 12 16 20 24 28 32 V , Drain-to-Source Voltage (V) Q , Total Gate Charge (nC) DS G Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED A BY R DS(on) t n r ) u 100 ( 100 C n a r 10µs
in „MOSFET defekt (evtl. durch Ohmmeter)?“ · Analoge Elektronik und Schaltungstechnik ·
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infineon-irf1010e-mosfet.pdf
l Ultra Low On-Resistance V DSS = 60V l Dynamic dv/dt Rating l 175°C Operating Temperature R = 12m DS(on) l Fast Switching G l Fully Avalanche Rated ID= 84A S Description ® AdvancedHEXFET PowerMOSFETsfromInternational Rectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea
in „DC Wandler wiederbeleben“ · Analoge Elektronik und Schaltungstechnik ·
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irf7389.pdf
IRF7389 1200 20 V GS = 0V, f = 1MHz D = 5.8A C iss= Cgs + Cgd , Cds SHORTED ) V = 15V C rss= Cgd V DS C oss= Cds + Cgd e 16 900 g F Ciss l ( o e e n r 12 t C▯oss u c 600 S p o a - 8 , a C G 300 Crss , G 4 V 0 0 1 10 100 A 0 10 20 30 40 Q , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) G Fig
in „Treiber für Push-Pull 12V?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf7389.pdf
IRF7389 1200 20 V GS = 0V, f = 1MHz D = 5.8A C iss= Cgs + Cgd , Cds SHORTED ) V = 15V C rss= Cgd V DS C oss= Cds + Cgd e 16 900 g F Ciss l ( o e e n r 12 t C▯oss u c 600 S p o a - 8 , a C G 300 Crss , G 4 V 0 0 1 10 100 A 0 10 20 30 40 Q , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) G Fig
in „Brushless DC Motorsteureung Dysfunktion AVR444“ · Analoge Elektronik und Schaltungstechnik ·
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mcp6004.pdf
2-15: Output Voltage Swing vs. FIGURE 2-18: Quiescent Current vs. Frequency. Power Supply Voltage. DS21733D-page 6 2003 Microchip Technology Inc. MCP6001/2/4 3.0 APPLICATION INFORMATION The MCP6001/2/4 family of op amps is manufactured – using Microchip’s state-of-the-art CMOS process and R MCP600X
in „Nichtinvertierender Operationsverstärker“ · Analoge Elektronik und Schaltungstechnik ·
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21709c_EEPROM.pdf
24AA02) (Note 1) 5 TF SDA and SCL fall time — — 300 ns (Note 1) — 6 THD:STA Start condition hold time600 — — ns 2.5V ≤ CC ≤ 5.5V 4000 — — 1.8V ≤ CC < 2.5V (24AA02) 7 TSU:STA Start condition setup 600 — — ns 2.5V ≤ CC ≤ 5.5V time 4700 — — 1.8V ≤ VC < 2.5V (24AA02) 8 THD:DAT Data input hold time 0 — — ns
in „EEPROM mit Infineon XC2200 ueber IIC benutzten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
21709c.pdf
24AA02) (Note 1) 5 TF SDA and SCL fall time — — 300 ns (Note 1) — 6 THD:STA Start condition hold time600 — — ns 2.5V ≤ CC ≤ 5.5V 4000 — — 1.8V ≤ CC < 2.5V (24AA02) 7 TSU:STA Start condition setup 600 — — ns 2.5V ≤ CC ≤ 5.5V time 4700 — — 1.8V ≤ VC < 2.5V (24AA02) 8 THD:DAT Data input hold time 0 — — ns
in „24LC02B mit (scheinbar) seltsamer Adressierung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
PHC2300_3_1_.pdf
VGS = 0; DS = 50 V; f = 1 MHz − 102 − pF P-channel VGS = 0; DS = −50 V; f = 1 MHz − 45 − pF C output capacitance oss N-channel VGS = 0; DS = 50 V; f = 1 MHz − 15 − pF P-channel VGS = 0; DS = −50 V; f = 1 MHz − 15
in „[S] PHC2300 komplementär Mosfet SO8 / Bestellung Farnell/HBE“ · Markt ·
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PDF
DS1339-DS1339U.pdf
16 SO (300 mils) DS1339C-2 DS1339C-3# -40°C to +85°C 3.0 16 SO (300 mils) DS1339C-3 DS1339C-33# -40°C to +85°C 3.3 16 SO (300 mils) DS1339C-33 DS1339U-2+ -40°C to +85°C 2.0 1339 rr-2 8 µSOP DS1339U-3+ -40°C to +85°C 3.0
in „[V] 2St. RTC Dallas DS1339U-33+ 3,3V uSO8 Gehäuse“ · Markt ·
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PDF
DS1339-DS1339U.pdf
16 SO (300 mils) DS1339C-2 DS1339C-3# -40°C to +85°C 3.0 16 SO (300 mils) DS1339C-3 DS1339C-33# -40°C to +85°C 3.3 16 SO (300 mils) DS1339C-33 DS1339U-2+ -40°C to +85°C 2.0 1339 rr-2 8 µSOP DS1339U-3+ -40°C to +85°C 3.0
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PDF
MTE011N10RFP-CystechElectonics.pdf
- - V V GSV, I =D50μA ∆BV DSS/∆Tj - 74 - mV/C Reference to 25C, ID=250μA V GS(th) 2.0 - 4.0 V V DS = V GSI D250μA *G FS - 14.5 - S V DS =10V, ID=10A IGSS - - ±100 nA V GS20V IDSS - - 1 μA V DS =80V, V GS =0V - - 5 V DS =80V, V GS =0V, Tj=55C *R DS(ON) - 11 13.8 m Ω V GS =10V, ID=11A Dynamic *Qg -
in „IC identifizieren“ · Analoge Elektronik und Schaltungstechnik ·
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IRF3708PBF.pdf
. Temperature www.irf.com 3 IRF3708/S/LPbF 3500 VGS = 0V, f = 1MHz 10 D = 24.8A Ciss= Cgs + Cgd ,C ds SHORTED V DS = 15V C = C ) Crss= Cgd + C ( 2800 oss ds gd g 8 F C iss t ( o e V n 2100 c 6 i u c S p o a 1400 - 4 , C oss t C G , 700 G 2 V C rss 0 0 1 10 100 0 10 20 30 40 50 VDS , Drain-to-Source Voltage
in „Transistor zum Schalten von 24V/12V“ · Analoge Elektronik und Schaltungstechnik ·
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IRF3708_IR__1_.pdf
. Temperature www.irf.com 3 IRF3708/S/LPbF 3500 VGS = 0V, f = 1MHz 10 D = 24.8A Ciss= Cgs + Cgd ,C ds SHORTED V DS = 15V C = C ) Crss= Cgd + C ( 2800 oss ds gd g 8 F C iss t ( o e V n 2100 c 6 i u c S p o a 1400 - 4 , C oss t C G , 700 G 2 V C rss 0 0 1 10 100 0 10 20 30 40 50 VDS , Drain-to-Source Voltage
in „Mosfet Treiberschaltung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF3708_IR__1_.pdf
. Temperature www.irf.com 3 IRF3708/S/LPbF 3500 VGS = 0V, f = 1MHz 10 D = 24.8A Ciss= Cgs + Cgd ,C ds SHORTED V DS = 15V C = C ) Crss= Cgd + C ( 2800 oss ds gd g 8 F C iss t ( o e V n 2100 c 6 i u c S p o a 1400 - 4 , C oss t C G , 700 G 2 V C rss 0 0 1 10 100 0 10 20 30 40 50 VDS , Drain-to-Source Voltage
in „24V-Ausgang potentialgetrennt aus einem STM32 3,3V“ · Mikrocontroller und Digitale Elektronik ·
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irf9z34n.pdf
Technology D l Dynamic dv/dt Rating V DSS = -55V l 175°C Operating Temperature l Fast Switching R DS(on) = 0.10 l P-Channel G l Fully Avalanche Rated Description S ID = -19A FifthGenerationHEXFETsfromInternationalRectifier utilize advanced processing techniques to achieve extremely low on-resistance
in „IRF9Z34N als Ersatz für BUZ171“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL1004_IR.pdf
BY R A DS(on) t T = 175 C e100 J )000 r ( u t 10us n e a u D 10 C100 100us e i r TJ= 25 C r v D 1ms e ,D , 1 I 10 10ms D IS TC= 25 C TJ= 175 C 0.1 VGS = 0 V Single Pulse 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 1 10 100
in „Schon wieder: Verpolungsschutz-MOSFET und LogicLevel-FET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL1004_IR.pdf
BY R A DS(on) t T = 175 C e100 J )000 r ( u t 10us n e a u D 10 C100 100us e i r TJ= 25 C r v D 1ms e ,D , 1 I 10 10ms D IS TC= 25 C TJ= 175 C 0.1 VGS = 0 V Single Pulse 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1 1 10 100
in „Schon wieder: Verpolungsschutz-MOSFET und LogicLevel-FET gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
P-MOSFET_IRF9Z34N.pdf
Technology D l Dynamic dv/dt Rating V DSS = -55V l 175°C Operating Temperature l Fast Switching R DS(on) = 0.10 l P-Channel G l Fully Avalanche Rated Description S ID = -19A FifthGenerationHEXFETsfromInternationalRectifier utilize advanced processing techniques to achieve extremely low on-resistance
in „Pegelwandler 0/5V zu 5V/-9V“ · Mikrocontroller und Digitale Elektronik ·
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24LC32A.pdf
< 2.5V (24AA32A) 5 T F SDA and SCL fall time — 300 ns (Note 1) 6 T HDSTA Start condition hold time 600 — ns 2.5V ≤ VCC≤ 5.5V 4000 — 1.8V ≤ VCC< 2.5V (24AA32A) 7 TSU STA Start condition setup time 600 — ns 2.5V ≤ VCC≤ 5.5V 4700 — 1.8V ≤ VCC< 2.5V (24AA32A) 8 T HDDAT Data input hold time 0 — ns (Note 2
in „I2C Eeprom: Buskollisionen nach einem schnellen Reset“ · Mikrocontroller und Digitale Elektronik ·
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ZXLD1366.pdf
40 50 60 SUPPLY VOLTAGE (V) Duty Cycle, L = 220µH ZXLD1366 14 of 30 October 2013 Document number: DS31992 Rev. 8 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated ZXLD1366 Typical Operating Conditions (cont.) 1200 800 R = 300mΩ 1000 700 R = 200mΩ )600 ) A m800 ( ( T500 N
in „Spannungsteiler zwischen Arduino und KSQ“ · Mikrocontroller und Digitale Elektronik ·
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2097320.pdf
40 50 60 SUPPLY VOLTAGE (V) Duty Cycle, L = 220µH ZXLD1366 14 of 30 October 2013 Document number: DS31992 Rev. 8 - 2 www.diodes.com © Diodes Incorporated A Product Line of Diodes Incorporated ZXLD1366 Typical Operating Conditions (cont.) 1200 800 R = 300mΩ 1000 700 R = 200mΩ )600 ) A m800 ( ( T500 N
in „ZXLD1366 Beschaltung ADJ Pin“ · Analoge Elektronik und Schaltungstechnik ·
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DS8816A-05.pdf
currentlimit,andthermalshutdowninto the WQFN-20L 3x3 package. Dynamic Phase Number Control LosslessR DS(ON)CurrentSensingforCurrentBalance The RT8816A adopts R DS(ON)urrent sensing technique. Currentlimitisaccomplishedthroughcontinuousinductor- Internal/External Soft-Start Adjustable Current Limit
in „Spule auf Synchronwandler wird innerhalb sekunden brennend heiß“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
51292S.pdf
the header connection socket to raise the header above the target. 2010 Microchip Technology Inc. DS51292S-page 45 Optional Headers FIGURE 9: DIMENSIONS (28 PIN) – AC162088 Dimensions are in inches 6 Conductor Target Pin 1 Located on Modular Cable Bottom side of Header 1.600 0.700 0.175 2.450 Top 0.165
in „PIC18F877 ICD2 bzw Brenner gesucht :-(“ · Mikrocontroller und Digitale Elektronik ·
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488161_1_.pdf
DL/DYF/DLF 09/1965- 09/1968 8 1600 23,0 / 4400 100 300 / 10,0 Ducellier 4173A DY 09/1966-09/1968 9 600 21,0 / 5200 100 300 / 10,0 Ducellier 4253A/B DX/DJ/DXF/DJF 10/1968- 09/1972 DP nach 09/1972 A 600 31,0 / 5400 100 300 / 10,0 Ducellier 4254A DY/DL/DT/DV 10/68- 05/1969 B 600 31,0 / 5400 100 300 / 10,0
in „Funktionsweise von analogen elektronischen Drehzahlmessern?“ · Analoge Elektronik und Schaltungstechnik ·
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TC4426.pdf
(0.254mm) per side. JEDEC Equivalent: MO-187 Drawing No. C04-111 2003 Microchip Technology Inc. DS21422B-page 15 TC4426/TC4427/TC4428 NOTES: DS21422B-page 16 2003 Microchip Technology Inc. TC4426/TC4427/TC4428 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery
in „Mosfet Treiber TC4426 + IRF IRF3205S (Ersatz gesucht)“ · Analoge Elektronik und Schaltungstechnik ·
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lt1153.pdf
Breaker Over-Voltage Circuit Breaker 12V 4.75V TO 5.25V + + 100 F 10 F IN VS IN V S 5V 5V 100 51k CT DS 51k CT DS 0.47 F LTC1153 5V 0.22 F LTC1153 5.6V STATUS G MTD3055E STATUS G IRLD024 30k GND SD GND SD *PTC LOAD LOAD (100°C)TOR *RL3006-50-100-25-PT0 KEYSTONE LTC1153 • TA03 SWITCH IS SHUTDOWN WHEN V
in „TPS61175 Overccurent Protection Mode“ · Analoge Elektronik und Schaltungstechnik ·
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irf3708.pdf
Frequency DC-DC Isolated Converters HEXFET Power MOSFET with Synchronous Rectification for Telecom V DSS R DS(on) max ID and Industrial Use 30V 12mΩ 62A QT High Frequency Buck Converters for Computer Processor Power Benefits Q Ultra-Low Gate Impedance Q Very Low R DS(on)t 4.5V V GS 2 Q Fully Characterized Avalanche
in „IRF3708 als Schalter“ · Mikrocontroller und Digitale Elektronik ·
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irf_1404.pdf
ID= 95A C iss= Cgs + Cgd ,Cds SHORTED C rss= Cgd V VDS = 32V 10000 C oss= Cds + Cgd ( 16 V = 20V g DS ) l p 8000 C o e iss V c c 12 t u c 6000 o p o a - 8 , 4000 t C Coss G , S 4 2000 VG Crss FOR TEST CIRCUIT 0 0 SEE FIGURE 13 1 10 100 0 40 80 120 160 200 240 V DS , Drain-to-Source Voltage (V) Q G Total
in „Pulsschweisgerät mit Auto Batt Schaltungs Verbesserung“ · Analoge Elektronik und Schaltungstechnik ·