-
PDF
giessotomat02_sch.pdf
C V Fehler: Versorgunsspannung 5V 8C CV C5 IC3_MAX483P D 100n G 5 Doppelverwendung D4: - Jumper links: für 485 und Adressleitung C auf GND daher nur 4 Ports Sensoren nutzbar V 1 GND - Jumper rechts: + alle 8 Ports Sensoren nutzbar, kein 485 1 1 2 2 IC3_MAX483 4 3 J 4 3 1 1 2 3 2 GND 4 RO + 7B 2 87k 1 RE/ 1 2 1 2 2 1 120 R87k 7 2 7 2 2 6 DE 3 1 2 8 R 8 R C R47 A R49 S 3 4 S 3 4 C +C6 DI 4 V MAX481CSA GND GND GND Arduino_Nano_Rev3 SV9 C 1 30 3 C 2 1_D1_
-
PDF
datenblatt-160715-ixys-standarddiode-dsei2x121-02a-sot-227-4-200-v-123-a.pdf
(4x) supplied Symbol Test Conditions Characteristic Values (per diode) Dim. Millimeter Inches typ. max. Min. Max. Min. Max. I T = 25°C V = V 1 mA A 31.50 31.88 1.240 1.255 R VJ R RRM B 7.80 8.20 0.307 0.323 TVJ 25°C V R = 0.8 • V RRM 0.5 mA C 4.09 4.29 0.161 0.169 T = 125°C V = 0.8 V 20 mA D 4.09 4.29
in „IGBT schon bei kleiner Last durchgebrannt“ · Analoge Elektronik und Schaltungstechnik ·
-
Datei
Bus.h
TASTER1 PC5 #define TASTER2 PC4 #define TASTER3 PC3 #define TASTER4 PC2 //Anschlussdefinitionen - MAX481 #define DE_DDR DDRD //DE=Driver Enable #define DE_PORT PORTD #define DE PD6 #define RE_DDR DDRD //RE=Receiver Enable #define RE_PORT PORTD #define RE PD5 //einzubindende Bibliotheken #include <stdint.h
in „Programmabsturz bei Verwendung des USARTs“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
FM24C256_20data_20sheet.pdf
Ramtron Drive, Colorado Springs, CO 80921 change in any manner without notice (800) 545-FRAM, (719) 481-7000, Fax (719) 481-7058 www.ramtron.com 11 August 2000 1/12 Ramtron FM24C256 Figure 1. Block Diagram Address 4,096 x 64 Counter Latch FRAM Array 8 SDA ` Serial to Parallel Data Latch Converter SCL
in „FRAM von RAMTRON“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
SPU0410LR5H.pdf
reliability. 2. ACOUSTIC & ELECTRICAL SPECIFICATIONS TEST CONDITIONS: 23 ±2°C, 55±20% R.H., V (DDn) < V < DD(maxDD no load, unless otherwise indicated Parameter Symbol Conditions Min Typ Max Units 1 Supply Voltage V DD 1.5 - 3.6 V Supply Current 1,2 DD - 120 160 µA Sensitivity S 94 dB SPL @ 1 kHz -41 -38 -35 dBV
in „Offset bei Messung einer Schalllaufzeit, woher?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
LCD_Extender_SMD_4Bit_schematics.pdf
100n 1 DE A X3 N G For Transmitter: S 4 1 G 5 1 DI - IC1 is mounted; R5-R11 not mounted - SJ1 open MAX481CSA GND GND
in „HD44780 Extender“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
LCD_Extender_SMD_4Bit_schematics.pdf
100n 1 DE A X3 N G For Transmitter: S 4 1 G 5 1 DI - IC1 is mounted; R5-R11 not mounted - SJ1 open MAX481CSA GND GND
in „LCD Extender“ · Projekte & Code ·
-
PDF
KEM_C1003_C0G_SMD.pdf
Dimensions Metric will govern Constant Dimensions — Millimeters (Inches) R Ref. Tape Size D E P P T Max G Min 0 1 0 2 1 Note 2 1.5 +0.10-0.0 1.75 ±0.10 4.0 ±0.10 2.0 ±0.05 0.10 0.75 25 8mm (0.059 +0.004, -0.0) (0.069 ±0.004) (0.157 ±0.004) (0.079 ±0.002) (.004) Max. (.030) (.984) Variable Dimensions — Millimeters (Inches) Tape Size Pitch E2 Min F P 1 T Max W Max A 0 0 2.0 ± 0.05 8.3 8mm Half (2mm) 6.25 3.5 ± 0.05 (0.079 ± 0.002) 1.1 (0.327) Note 5 (0.246) (0.138 ± 0.002) 4.0 ± 0.10 (0.098) 8.3 8mm Single (4mm) (0.157 ± 0.004) (0.327) 1. The cavity defined
in „Quarz Dimensionierung“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
5V_ISC3535VGBC1MCK3.pdf
---------------------------------- 1. I Reflow soldering Profile for Lead Free solder 300 ℃ 10sec. max 1-5℃/sec 260℃ max 250 Preheating 150-180℃ 230℃max 2-5℃/sec r 200 a e 2-5℃/sec m 150 t 120sec.Max 50sec.max 100 50 25℃ 0 0 50 100 150 200 250 300 Time sec Notes: 1. We recommend the reflow temperature
in „SPI-LED (ISC3535VGBC1MCK3) Ansteuerung mit 4Mbps“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
LCD_Extender_smd_8bit_schematics.pdf
closed S 4 DI +C5 V C6 V C7 V C8 - R14 mounted 1 47u IC4P 100n IC1P 100n IC3PWR 100n For Transmitter: MAX481CSA N G N - IC1, IC3 mounted GND 1 G 5 2 G - SJ1-SJ10 open - R14 not mounted GND
in „HD44780 Extender“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
LCD_Extender_smd_8bit_schematics.pdf
closed S 4 DI +C5 V C6 V C7 V C8 - R14 mounted 1 47u IC4P 100n IC1P 100n IC3PWR 100n For Transmitter: MAX481CSA N G N - IC1, IC3 mounted GND 1 G 5 2 G - SJ1-SJ10 open - R14 not mounted GND
in „LCD Extender“ · Projekte & Code ·
-
PDF
MAX811-MAX812.pdf
VCC > VTH(MAX), MAX81_L/M MR Input Threshold VIL 0.8 V V IH 0.7 x CC VCC > VTH(MAX), MAX81_R/S/T VIL 0.25 x CC MR Pull-Up Resistance 10 20 30 kΩ V I = 150µA, 1.8V < V < V 0.8V OH SOURCE CC TH(MIN) CC MAX812R/S/T
in „MAX 811 richtig anschließen“ · Mikrocontroller und Digitale Elektronik ·
-
Datei
Values.txt
4 S05K275 4 RESET 4 R 4 PTR2 4 PINHD201.27 4 P6KE22A 4 MOUNT-PAD-ROUND3.0 4 MOC3052 4 MCP23008SO 4 MAX481CSA 4 MAX220CPE 4 LED 4 L297 4 G 4 FRM12 4 EGL-1D 4 BZV10 4 BUZ11H 4 BD139 4 BC846ALT1SMD 4 BC817-16SMD 4 BC547N 4 BC338-40 4 BC160 4 BC107B 4 BAT43 * 4 BAT43 4 AT90S2313S 4 8 Mhz 4 8k2 4 7-SEG_SA52
in „[KiCad] Bibliotheksaufbau - Konzeptideen gesucht“ · Platinen ·
-
Datei
Devices.txt
100 4 MPT4 4 MPT3 4 MOUNT-PAD-ROUND3.0 4 MOUNT-PAD-ROUND2.8 4 MOC3052 4 ML16E 4 ML14 4 MCP23008SO 4 MAX481CSA 4 MAX220CPE 4 M12 4 M09VP 4 M09HP 4 LM3914N 4 L-EU0207/7 4 LED_3MM_PRINT 4 L297 4 L10P 4 KS16 4 IRF530 4 HF44HS 4 HD-N101 4 HC49/S 4 G09R 4 FT2232C 4 FRM12 4 F09VP 4 F09D 4 ELKO_10µF_35V 4 EGL
in „[KiCad] Bibliotheksaufbau - Konzeptideen gesucht“ · Platinen ·
-
Datei
CT0889_Mini-DOS.asm
Request merken INT 22H ; MCB(1) =>BX DOS48L1: MOV DS,BX ; BX => MCB (x) POP BX MOV DX,0 ; init f r max-MCB DOS48L: CALL MCBCHK CMP DS:OWNER,0 ; MCB frei? JNZ DOS482 ; falls nein CMP BX,DS:SIZE ; < Request? JA DOS481 ; dann zu klein CALL DIMMCB ; sonst MCB mit ; L nge BX alloz. MOV AX,DS ; OWNER = MCB-Seg +1 INC AX MOV DS:OWNER,AX ; Owner eintragen JMP DOS48EX ; fertig DOS481: CMP DS:SIZE,DX ; den maximalen JNA DOS482 ; freien Block MOV DX,DS:SIZE ; merken DOS482: CALL NEXTMCB ; JNC DOS48L ; ok, weiter suchen MOV BX,DX ; gr áten Block => BX MCB_ERR8: ; Exit Fehler 8: Nicht
in „[S] 8086 oder 8088“ · Markt ·
-
PDF
irlml2502.pdf
V TJ,STG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 75 100 °C/W www.irf.com 1 04/30/03 IRLML2502 Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR
in „suche Transistor 5V 2A“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
162828-da-01-en-IRLML_2803TR.pdf
ns TJ, STG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Parameter Typ. Max. Units R Maximum Junction-to-Ambi nt 230 °C/W θJA 4/28/03 IRLML2803 Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown
in „PWM RGB-Led Beleuchtung“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
Kemet_Tantalum_Chip_Capacitors__F3102TA_.pdf
KEMET DCLeakage DF Ω @+25ºC tance Size PartNumber µA@25ºC %@+25ºC 100kHz tance µA@25ºC %@+25ºC µF Max 120HzMax µF Size PartNumber Max 120HzMax 100kHz Max Max 10VoltRatingat+85ºC(7VoltRatingat+125ºC) 20VoltRatingat+85ºC(13VoltRatingat+125ºC) 33.0 D T491D336(1)010AS 3.3 6. 0.8 33.0 V T491V336(1)010AS
-
PDF
irlml6344pbf.pdf
PD - 97585 IRLML6344TRPbF HEXFET Power MOSFET V DS 30 V V GS Max ± 12 V G 1 R DS(on) max 29 mΩ 3 D (@V GS = 4.5V) TM R DS(on) max S 2 Micro3 (SOT-23) 37 mΩ IRLML6344TRPbF (@V GS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Benefits Low R DSon
in „LEDs: Konstantstrom-Multiplexing. Schaltung & Teile so ok?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRLML6244TRPBF_Datenblatt.pdf
PD - 97535A IRLML6244TRPbF ® HEXFET Power MOSFET V DS 20 V V GS Max ±12 V * R DS(on) max 21.0 m (@V GS = 4.5V) ' R DS(on) max 27.0 m 6 Micro3TM (SOT-23) (@V GS = 2.5V) IRLML6244TRPbF Application(s) Load/ System Switch Features and Benefits Features Benefits Low
in „passender FET wie beschalten?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
sm6t.pdf
: Electrical characteristics parameter values amb = 25 °C, unless otherwise specified) (1) (2) IRM max at VRM V BRat R 10 / 1000 µs 8 / 20µs αT V I R V I R CL PP D CL PP D 25 85 Order code Min. Typ. Max. Max. Max. Max. Max. °C °C - µA V V mA V (3) A (4) Ω V A Ω 10 4/°C SM6T6V8A/CA 20 50 5.8 6.45 6.8
in „SMD Diode unbekannte Kennzeichnung“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
vn820-e.pdf
and reel (suffix “TR”) REEL DIMENSIONS All dimensions are in mm . Base Q.ty 1000 Bulk Q.ty 1000 A (max) 330 B (min) 1.5 C (± 0.2) 13 F 20.2 G (+ 2 / -0) 24.4 N (min) 60 T (max) 30.4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width W 24 Tape
in „P2PAK in Eagle“ · Platinen ·
-
PDF
IXTA-TP3N50D2_.pdf
42 ns Side f Q g(on) 40 nC Dim. Millimeter Inches Q gs V GS = 5V, V DS = 250V, I = D.5A 5 nC Min. Max. Min. Max. Q 20 nC A 4.06 4.83 .160 .190 gd b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 R thJC 1.00 °C/W c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 R thCS TO-220 0.50 °C/W D 8.64 9.65 .340 .380 D1
in „J-FET N-Channel mit gößer 70V Drain / Source Spannung für Konstantstromsenke“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
BD329.PDF
Philips Semiconductors Product specification NPN power transistor BD329 FEATURES PINNING • High current (max. 3 A) PIN DESCRIPTION • Low voltage (max. 20 V). 1 emitter 2 collector, connected to metal part of APPLICATIONS mounting surface 3 base • Especially for battery equipped applications. DESCRIPTION handbook
-
PDF
irf7401.pdf
STG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Ratings Parameter Typ. Max. Units R Maximum Junction-to-AmbientS ––– 50 θJA °C/W 02/13/01 IRF7401 Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source
in „kleiner FET“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
P4SMA_LIF.PDF
FBEoGSFF▯BTTFNCMZ t TP p -Temperature Min (T ) 150°C s(min) Ramp-up CTito Tl Zone Pre Heat -Temperature Max (T ) 200°C TL L P s(max) ) tL -Time (min to max) (t ) ▯▯▯o▯▯▯▯▯TFDT (Ts(max) s u Average ramp up rate (LiquidusTemp r Ramp-down 3°C/second max pTs(min) (TL) to peak m s T Preheat TS(max)oTL- Ramp-up Rate 3°C/second max -Temperature (T L (Liquidus) 217°C 25˚C t 25˚C to Peak Reflow -Time (min to max) (ts) ▯▯▯o▯▯▯▯▯TFDPOET Time (t) +0/-5 PeakTemperature (T )P 260 °C Time within 5°C of actual peak ▯▯▯o▯▯▯▯TFDPOET Temperature
in „Warum noch KFZ-Relais?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
AVR_Control_XS-S.pdf
S X1-6 X3-1 4 X4-3 O K X1-7 P X4-2 IC2 S X4-1 1 RO 7 B 2 X2-1 RE/ D 6 3 D X2-2 A DE DI 4 X2-3 GND MAX481CSA 0 k R 1 GND +24V +5V 12u X1-8 D14 IN OUT LL4148 L1 E GND 8C E IC3 V 3 C13 C12 LMO78_05-0.5 +C3 C2 C1 IC2P C7 P 1 N 1 2 D 4u7 4u7 47u 100n 100n 5G 100n X1-9 GND 1 2 3 4 5 6 7 8
in „S Jemanden für das Zeichnen einer Schaltung & Leiterplatte“ · Markt ·
-
PDF
irlml6302.pdf
ns TJ, STG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Parameter Typ. Max. Units R Maximum Junction-to-Ambie t 230 °C/W θJA 03/09/05 IRLML6302 Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source
in „LCD-Hintergrundbeleuchtung dimmen (PWM)“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
fdc.pdf
unless otherwise noted 6 Electrical Characteristics 3 3 0 Symbol Parameter Test Conditions Min Typ Max Units L OFF Characteristics I Leakage Current V = 20 V, V = 250 A 1 A FL IN ON/OFF ON Characteristics (Note 3) V DROP Conduction Voltage V IN12 V, V ON/OFF = 3.3 V, L = 2.5 A 0.2 V V IN= 5 V, VON/OFF
in „fet schalten“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
BSS89.pdf
s Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage (DC) − − 200 V V gate-source voltage (DC) open drain − − ±20 V GSO D drain current (DC) − − 300 mA Ptot total power dissipation Tamb ≤ 25 °C − − 1 W RDSon drain-source
-
PDF
irlml6401.pdf
T T Junction and Storage Temperature Range -55 to + 150 °C J,STG Thermal Resistance Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 75 100 °C/W www.irf.com 1 04/29/03 IRLML6401 Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR
in „CMOS Transistoren“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRLML6401.pdf
T T Junction and Storage Temperature Range -55 to + 150 °C J,STG Thermal Resistance Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 75 100 °C/W www.irf.com 1 04/29/03 IRLML6401 Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR
in „parasitäres Glimmen beim LED-Muxing. Transistoren? Einstreuungen?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
IRLML6401.pdf
T T Junction and Storage Temperature Range -55 to + 150 °C J,STG Thermal Resistance Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 75 100 °C/W www.irf.com 1 04/29/03 IRLML6401 Electrical Characteristics @ T = 25°C Junless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR
in „LED Multiplexer glimmt“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
irlml6344pbf.pdf
IRLML6344TRPbF HEXFET Power MOSFET V 30 V DS G 1 V GS Max ± 12 V R DS(on) max 3 D 29 mΩ (@V GS = 4.5V) S 2 TM R DS(on) max Micro3 (SOT-23) 37 mΩ IRLML6344TRPbF (@V GS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Benefits Low R DSon(<29mΩ
in „IRLML 6344, bin ich zu doof zum Messen?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
irlml6344pbf-1228041.pdf
IRLML6344TRPbF HEXFET Power MOSFET V 30 V DS G 1 V GS Max ± 12 V R DS(on) max 3 D 29 mΩ (@V GS = 4.5V) S 2 TM R DS(on) max Micro3 (SOT-23) 37 mΩ IRLML6344TRPbF (@V GS = 2.5V) Application(s) • Load/ System Switch Features and Benefits Benefits Low R DSon(<29mΩ
in „RaspiPi mit 3,3V einen 5V Kreis wie schalten?“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
dimmer6.pdf
224 256 288 320 352 384 416 448 480 1 0 0 0 0 1 33 65 97 129 161 193 225 257 289 321 353 385 417 449 481 0 1 0 0 0 2 34 66 98 130 162 194 226 258 290 322 354 386 418 450 482 1 1 0 0 0 3 35 67 99 131 163 195 227 259 291 323 355 387 419 451 483 0 0 1 0 0 4 36 68 100 132 164 196 228 260 292 324 356 388 420
in „12V Halogenlampen dimmen“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
SMAJ-HUAAN.pdf
Voltage V BR(Vol@IT nt Voltage@I PP Current @V RWM cation Unidirectional Bidirectional VRWM(V) Min Max IT(mA) VC(V) PP(A) IR(μA) UL SMAJ5.0A SMAJ5.0CA 5.0 6.40 7.00 10 9.2 43.5 800 √ SMAJ6.0A SMAJ6.0CA 6.0 6.67 7.37 10 10.3 38.8 800 √ SMAJ6.5A SMAJ6.5CA 6.5 7.22 7.98 10 11.2 35.7 500 √ SMAJ7.0A SMAJ7.0CA
in „Unbekannte SMD Diode“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
IW1766.pdf
permanent damage if exceeded. Parameter Symbol Value Units DC supply voltage range (pin 8, = 20mA max) V -0.3 to 25.0 V CC CC Continuous DC supply current at V pin (V = 15V) I 20 mA CC CC CC ASU output (pin 4) -0.3 to 19.0 V OUTPUT (pin 6) -0.3 to 20.0 V V input (pin 1, I ≤ 10mA) -0.7 to 4.0 V SENSE
in „Datenblatt für R1Y8K Schaltnetzteil IC gesucht“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
High_Power_IGBT_IXGK-GX320N60A3.pdf
Requirement Symbol Test Conditions Characteristic Values (TJ= 25°C, Unless Otherwise Specified) Min. Typ. Max. Applications BV I = 1mA, V = 0V 600 V CES C GE z Power Inverters VGE(th) IC = 4mA, V CE= VGE 3.0 5.0 V z UPS z Motor Drives ICES VCE = VCES, GE = 0V 150 μA z TJ= 125°C 1.5 mA SMPS z PFC Circuits IGES
in „IGBT brennt durch - Weit unter spezifkation.“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
IXGK-GX320N60A3.pdf
Requirement Symbol Test Conditions Characteristic Values (TJ= 25°C, Unless Otherwise Specified) Min. Typ. Max. Applications BV I = 1mA, V = 0V 600 V CES C GE z Power Inverters VGE(th) IC = 4mA, V CE= VGE 3.0 5.0 V z UPS z Motor Drives ICES VCE = VCES, GE = 0V 150 μA z TJ= 125°C 1.5 mA SMPS z PFC Circuits IGES
in „Impulsbelastung von IGBTs -> Parallelschaltung -> Ausgleichswiderstände“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
DS100258D_IXTH-TT16N10D2_.pdf
Test Conditions Characteristic Values TO-268 Outline (TJ= 25C, Unless Otherwise Specified) Min. Typ. Max. g V = 20V, I = 8A, Note 1 7 11 S fs DS D C iss 5700 pF C oss VGS = -10V, V DS= 25V, f = 1MHz 1980 pF C rss 940 pF t 45 ns d(on) Resistive Switching Times t 43 ns r V = + 5V, V = 50V, I = 8A t GS DS
in „Wann sperrt ein selbstleit. N-Kanal MOSFET?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
Kupferlackdraehte-Allgemeine-Anforderungen-nach-DIN-EN-IEC-60317-0-1.pdf
Mindestzunahme Größter Außen- Zu- A-Ø A-Ø spannung bei RT widerstand bei 20° C elektrischen dehn. max. Grad zug Nenn- Tole- A (GR1) durch die Isolierung durchmesser nahme max. max. mind. V Ohm/m Fehlerzahl je 30 mmin. GR2+ max. GR1 Ø ranz mm² km GR1 GR2 GR3 GR1 GR2 GR3 min. GR1B GR2B GR1 GR2 GR3 min
in „Lackdicke der Isolierung“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
BS170.pdf
SOT23-3L Reel Configuration: Figure 4.0 Component Rotation T r n W1 Measured at Hub s i s o r Dim A Max max A Dim N See detail AA 7" Diameter Option B Min Dim C See detail AA W3 Dim D min 13" Diameter Option W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Reel Tape Size Option
in „BS170 Wie viel Watt verträgt er?“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
BUW84.PDF
specification Silicon diffused power transistors BUW84; BUW85 MGB938 handbook, full pagewidth 10 I ICM max δ = 0.01 C (A) IC max p = 20 s (1) 1 II 50 s 100 s 200 s 500 s (2) 10−1 1 ms 2 ms I 5 ms 10 ms DC 10−2 III IV 10−3 10 102 103 104 VCE (V) BUW84. Tmb ≤ 25 °C. I - Region of permissible DC operation.
in „Hochspannung Regeln für eine Bildverstärker Röhre“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
Uponor_Product_info_Smatrix_Move_PRO_Modbus_RTU_EN_1088472_12_2016.pdf
1.6 Cooling curve > offset 1354 Read/Write Analogue 32 bit, Signed Integer. Range: -8 – +8 Heating - Max supply temp. 400 Read/Write Analogue 32 bit, Signed Integer. Range: 5 – 70 Heating - Min supply temp. 398 Read/Write Analogue 32 bit, Signed Integer. Range: 5 – 35 Cooling - Max supply temp. 595 Read
in „Modbus Sniffer mit Linux“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
A501_LCW_E6SG.pdf
Durchlassspannung 6Seite 22 (min.) V F 2.9 V Forward voltage 6) page 22 (typ.) V 3.4 V F IF= 30 mA (max.) V F 3.8 V Sperrstrom (typ.) I not designed for μA R Reverse current (max.) IR reverse operation μA VR = 5 V Optischer Wirkungsgrad (typ.) η opt 38 lm/W Optical efficiency I = 30 mA, CCT = 3500 K F
in „LED ganz einfach dimmen“ · Mikrocontroller und Digitale Elektronik ·
-
PDF
sm6t100a.pdf
characteristics - parameter values (Tamb = 25 °C, unless otherwise specified) (1) 10 / 1000 µs 8 / 20µs IRM max at VRM V BRat BR (2)(3) (4) (2)(3) (4) αT V CL IPP R D VCL PP RD Type 25 °C 85 °C Min. Typ. Max. Max. Max. Max. Max. Max. µA V V mA V A Ω V A Ω 10 /°C SM6T6V8A/CA 20 50 5.80 6.45 6.8 7.14 10 10.5 57
in „Suche Diode GP839“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
DS_FT232BL_BQ.pdf
acceptable, then several pin compatible alternatives are available such as Sipex SP213ECA , Maxim MAX213CAI and Analog Devices ADM213E which are good for communication at up to 115,200 baud. If a higher baud rate is desired, use a Maxim MAX3245CAI part which is capable of RS232 communication at rates
-
PDF
Z5U_Datenblatt.PDF
size chip contact factory for quantity per reel. REEL DIMENSIONS Tape(1) A B* C D* N W 1 W 2 W 3 Size Max. Min. Min. Min. Max. 7.9 Min. 8.4+–0.0 14.4 (.311) 8mm (.331–0.00 (.567) 10.9 Max. (.429) 330 1.5 13.0±0.20 20.2 50 (12.992) (.059) (.512±.008) (.795) (1.969) 11.9 Min. 12.4–0.0 18.4 (.469) 12mm (.488–0.06 (.724) 15.4 Max. (.607) Metric dimensions will govern. English measurements rounded and for reference only. (1) For tape sizes 16mm and 24mm (used with chip size 3640) consult EIA RS-481 latest revision. 32 Embossed
in „Vielschicht statt Elko + Keramik“ · Analoge Elektronik und Schaltungstechnik ·
-
PDF
0900766b80718482.pdf
@ +25°C a Size Part Number μA @ 25ºC 120 Hz 100 kHz Size Part Number μA @ 25ºC 120 Hz 100 kHz f µF Max Max Max µF Max Max Max u 2.5 Volt Rating at +85ºC (1.7 Volt Rating at +125ºC) **6 Volt Rating at +85ºC (4 Volt Rating at +125ºC) S 100.0 T T491T107(1)2R5A(2) 2.5 24.0 3.9 15.0 C T491C156(1)006A(2) 0.9
in „Kemet Kondensatoren“ · Analoge Elektronik und Schaltungstechnik ·