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PDF
LT8609_StepDown.pdf
Characteristics Switch Drop vs Temperature Switch Drop vs Switch Current 350 SWITCH CURRENT = 1A 800 300 700 600 V 250 V ( ( 500 P 200 P R R D D 400 C 150 C I I 300 S 100 S 200 50 100 TOP SW BOT SW TOP SW BOT SW –50 –30 –10 10 30 50 70 90 110 130 150 0 0 0.5 1 1.5 2 2.5 3 TEMPERATURE (°C) SWITCH CURRENT
in „LT8609 MSOP Platine. Ich bekomms einfach nicht hin.“ · Platinen ·
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PDF
M27C256B_10f1.pdf
Max Unit AVEL AS Address Valid to Chip Enable Low 2 s t t Input Valid to Chip Enable Low 2 s QVEL DS tVPHEL tVPS VPP High to Chip Enable Low 2 s tVCHEL tVCS VCC High to Chip Enable Low 2 s tELEH tPW Chip Enable Program Pulse Width 95 105 s t t Chip Enable High to Input Transition 2 s EHQX DH tQXGL tOES
in „M27C256B zu verkaufen“ · Markt ·
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PDF
FPF1048.pdf
Voltage Operating Range: 1.5V to 5.5V targets applications requiringa highly integrated l Typical DS(ON) solution. It disconnects loads powered from the DC w =5.5V power rail (<6V) with stringent off-state current targets - 21mΩ at VIN and high load capacitances (up to 100µF). The R - 23mΩ at VIN4.5V
in „Lithium Polymere Akku parallel schalten - Kurzschlussschutz“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LED-RGB-SK6812RGBP8.pdf
Conditions Reference Criterion 100 ± 5°C ~ -40°C ± 1 Thermal Shock 5°C MIL-STD-202G 0/22 30min~30min 300 cycles High Temperature JEITA ED-4701 2 Storage Ta= +100ºC 1000hrs 0/22 200 201 Low Temperature JEITA ED-4701 3 Storage Ta= -40ºC 1000hrs 0/22 200 202 High Temperature JEITA ED-4701 4 High Humidity
in „RGBW Led Stripe 12V LED Typ unbekannt“ · Mikrocontroller und Digitale Elektronik ·
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PDF
sv-ic5.pdf
Solution www.lgis.com “G lba lstn dardiC5, servesaw ieva rietyofapp liatins tom eetthem ajorityfu sernee ds.” �Modbuscommunication(Option) �PIDcontrol �Sensorlessvector control �Motor parameter autotuning Models Wiring KeypaProgram parTips on Installation 05 07 08 11 18 FeaturesSpecifTerminaProgram PChecking
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PDF
ch9121_doc2.pdf
Specifications Operating voltage: 3.3V/5V Operating current: 140mA Operating mode: TCP/UDP UART baud rate: 300bps ~ 921.6Kbps UART TTL level: 3.3V/5V compatible Storage temperature: -55°C ~ 125°C Operating temperature: -40°C ~ 85°C Dimensions: 53.00 x 22.00mm Pinout power positive, use any 2-CH-UART-TO-ETH-4
in „Serieller Tunnel durch IP-Netz?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Computer_Kontakt_1986-08_09_-_21.pdf
40 40 40 6c £4400 46 cb 86 cB 37 cd d3 Fc 7e 1* 79 IF 38 a8 IF 38 ab IF 38 b7 IF c8 65000 70 00 88 dS a8 Ba BB 00 88 C8 C0 £4420 7a 38 a9 d£ 06 dS ad 4b 43 fb 29 65010 a8 98 88 00 70 BB BB 88 70 00 32 £4430 28 bd d6 02 d8 28 33 d6 02 38 ce 70 48 70 40 40 00 70 83 a8 90 d4 40 £4440 5b 28 47 d6 02 38 4F
in „ZX Spectrum => Upgrade von 16 auf 48 KB RAM“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ADC78H90.pdf
QSPIOand SPare trademarks of Motorola, Inc.ductor Corporation. © 2004 National Semiconductor CorporDS200793 www.national.com 9 H Block Diagram 8 C D A 20079307 Pin Descriptions and Equivalent Circuits Pin No. Symbol Equivalent Circuit Description ANALOG I/O 4 - 11 AIN1 to AIN8 Analog inputs. These signals
in „Probleme mit ADC78H90 von National“ · Mikrocontroller und Digitale Elektronik ·
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PDF
FLASH_IS25LP128.pdf
INPUT/OUTPUT TIMING (1) Figure 9.2 SERIAL INPUT/OUTPUT TIMING (Normal Mode) CEH CE# CS CH SCK CKH CKL tDS DH SI VALID IN VALID IN tV OH tDIS SO HI-Z VALID OUTPUT HI-Z Note1. For SPI Mode 0 (0,0) (1) Figure 9.3 SERIAL INPUT/OUTPUT TIMING (DTR Mode) CEH CE# CS CH SCK CKH CKL t t DS DH SI VALID IN VALID IN
in „STM32L4 memory-mapped QSPI Lesegeschwindigkeit maximieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
RF12.pdf
reading the status register. P1 -65 dBm 1300 mV P2 -65 dBm 1000 mV P3 -100 dBm 600 mV P4 -100 dBm 300 mV DQD The Data Quality Detector is based on counting the spikes on the unfiltered received data. For correct operation, the “DQD threshold” parameter must be filled in by using the Data Filter Command
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PDF
RFM12.pdf
reading the status register. P1 -65 dBm 1300 mV P2 -65 dBm 1000 mV P3 -100 dBm 600 mV P4 -100 dBm 300 mV DQD The Data Quality Detector is based on counting the spikes on the unfiltered received data. For correct operation, the “DQD threshold” parameter must be filled in by using the Data Filter Command
in „RF12 Funkmodul“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TPS73133.pdf
CURRENT GROUND PIN CURRENT vs TEMPERATURE 700 700 IOUT= 150mA 600 600 500 500 ) A 400 A 400 ( ( N N IG300 IG300 200 200 VIN 5.5V V = 4V VIN= 5.5V IN 100 VIN= 4V 100 VIN 2V VIN= 2V 0 0 0 30 60 90 120 150 −50 − 25 0 25 50 75 100 125 IOUT(mA) Temperature ( C) Figure 9. Figure 10. CURRENT LIMIT vs V OUT GROUND
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PDF
RF12.pdf
reading the status register. P1 -65 dBm 1300 mV P2 -65 dBm 1000 mV P3 -100 dBm 600 mV P4 -100 dBm 300 mV DQD The Data Quality Detector is based on counting the spikes on the unfiltered received data. For correct operation, the “DQD threshold” parameter must be filled in by using the Data Filter Command
in „RFM 12 Wake-Up und start nach POR“ · HF, Funk und Felder ·
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PDF
ISL6753.pdf
CR4 4.99 + + 0805 SS12 SS12 0805 15, 16 C1-C4 T1 33uF 1 450V 2, 3 2 1,C Ns CR5 3 + + R1 CSD10060G 300 - 400 4.7k 13, 14 P4 5% Np 11, 12 RETURN VDC 7,8 C13 7,8 CR6 2512 0.1uF Ns CSD10060G 1 1 Q9 Q10 2 2 6, 7 R2 ZXTDB2M832 ZXTDB2M832 L1 4.7k 4 4 9, 10 2 PB2020.103 C18 + R28 5% 3 3 1,C 2512 1uF C19 C20
in „Warum FET-Ansteuerung mit Trafo?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM1815.pdf
Order Number LM1815M or LM1815N See NS Package Number M14A or N14A © 2005 National Semiconductor CorpoDS007893 www.national.com 5 8 1 Absolute Maximum Ratings (Note 1) Storage Temperature Range −65˚C ≤ TJ ≤ +150˚C M Junction Temperature +150˚C L If Military/Aerospace specified devices are required, please
in „mal kurz beim Drehzahlmesser bleiben...“ · Mikrocontroller und Digitale Elektronik ·
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Datei
main.c
or the x-memory area depending on whether the extended data space (EDS) is available in the given dsPIC33E device. */ __eds__ int bufferA[NUMSAMP] __attribute__( (eds, space(dma)) ); __eds__ int bufferB[NUMSAMP] __attribute__( (eds, space(dma)) ); //void ProcessADCSamples( __eds__ int *adcBuffer );
in „dsPIC33E Probleme mit ADC/DMA“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM1815.pdf
Order Number LM1815M or LM1815N See NS Package Number M14A or N14A © 2005 National Semiconductor CorpoDS007893 www.national.com 5 8 1 Absolute Maximum Ratings (Note 1) Storage Temperature Range −65˚C ≤ TJ ≤ +150˚C M Junction Temperature +150˚C L If Military/Aerospace specified devices are required, please
in „µC Wahl für meine Dipmlomarbeit“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SP724.pdf
. . . . . . . . . . . . . . 150 C Maximum LeadTemperature (Soldering 10s) .........................300 C (SOT - Lead Tips Only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device.This is a stress only rating and operation of the device at these
in „AVRISP mkII - defektes Bauteil gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DLG7137.pdf
( 3 0 0 Z 3 3 0 1 ( O . 0 L 7 1 D 0 ( . 12.7(0.500) max. 2 2.54(0.100) 7.87(0.310) Luminous 7.62(0.300) Intensity Code EIADate ) Z Code 3 W p . W t ( Y 0 x 7 ) 1 a . 3 0 0 m 5 . 4 . 0 ( ) 5 . ( 0 2 3 1 M 2 . 1 0 . 4 R ± 4 1 ( L S 0 5 9 D O 8 2 . 0 0 1 1 ( 0 5 Devicemarking ( 4 begins over pin1 . 2 3.56
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PDF
DLG7137.pdf
( 3 0 0 Z 3 3 0 1 ( O . 0 L 7 1 D 0 ( . 12.7(0.500) max. 2 2.54(0.100) 7.87(0.310) Luminous 7.62(0.300) Intensity Code EIADate ) Z Code 3 W p . W t ( Y 0 x 7 ) 1 a . 3 0 0 m 5 . 4 . 0 ( ) 5 . ( 0 2 3 1 M 2 . 1 0 . 4 R ± 4 1 ( L S 0 5 9 D O 8 2 . 0 0 1 1 ( 0 5 Devicemarking ( 4 begins over pin1 . 2 3.56
in „[V] #VERKAUFT# Platine mit 8 Stück DLG7137, 5*7 Punktmatrix“ · Markt ·
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PDF
BI_directional_level_shifter_5V_3_3_V.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „Bidirektinaler Level Shifter 3.3V - 5V gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
levelshifter.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „Unidirectionaler Level Shifter“ · Mikrocontroller und Digitale Elektronik ·
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PDF
an97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „Pegelwandler SD-Karten tauglich“ · Mikrocontroller und Digitale Elektronik ·
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PDF
levelshifter.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „5V LCD an 3,3V mit StepUp“ · Mikrocontroller und Digitale Elektronik ·
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PDF
levelshifter.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „Einfacher levelshifter“ · Mikrocontroller und Digitale Elektronik ·
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PDF
levelshifter.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „I2C Levelshifter gesucht“ · Markt ·
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PDF
AN97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „Wo bekomme ich Pegelwandler von Maxim?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
sp14n001-z1.pdf
5.2 ELECTRICAL CHARACTERISTICS OF BACKLIGHT ITEM SYMBOL MIN. TYP. MAX. UNIT NOTE Lamp Voltage VL - (300) - Vrms Ta=25℃ Frequency fL - (70) (85) kHz Ta=25℃ Lamp Current IL (4) (5) (6) mArms Ta=25℃ Starting VS (1000) - - Vrms Ta=25℃ Discharge Voltage (Note 2) Please certainly inform HITACHI before designing
in „Graphik Display (LCD) an AVR anschließen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
bi_direct_levelshifter.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „Arduino YUN -> DUE per I2C“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Bi-directional_level_shifter_for_I2C-bus_and_other.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „SHT21 auslesen mit I2C Lib von P.Fleury“ · Mikrocontroller und Digitale Elektronik ·
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PDF
an97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „Bidirektionaler 5V<>3.3V Pegelwandler f. Hobbyprojekt gesucht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
I2C_Wandler_an97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „Versorgungsspannung uC und Display“ · Mikrocontroller und Digitale Elektronik ·
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PDF
I2C_Wandler_an97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „Verdrahtung Levelshifter“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
I2C_Wandler_an97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „FETs zu dicht verbaut?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
I2C_Wandler_an97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „HM-11 logic level shifter für arduino“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AN97055-i2c-levelshifter.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „Level Shifter selbst bauen, ESP8266, I2C, Bi-Direktional - Welcher MOSFET?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
an97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „I2C Kommunikation ESP32 -> Arduino Pro Micro 5v / Logiclevel converter“ · Mikrocontroller und Digitale Elektronik ·
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PDF
I2C_Wandler_an97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „ESP01S findet BME280 nicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
I2C_Wandler_an97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „Schaltplan für i2c Schnittstelle für LCD-Modul“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
I2C_Wandler_an97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „Pegelwandler, welcher MOSFET?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
I2C_Wandler_an97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „Seltsames Verhalten bei Arbeit mit LevelShifter“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LicheeTang-RV_Schematic_.pdf
USB_MICRO R14 Rb FB2 VCC C10 5V 3V3 GND GND Vout = 0.6*(1 + Ra/Rb) JTAG_TMS zSPI1_NSS 2 3 4 5 6 7 0 DS1 150K-1% GND A A A A A A B R25 Vb0 L3 2 JTAG_TCK zSPI1_SCK P P P P P P P POWER 5V 4K7 GND 20 SW3 EN1 9 5V JTAG_TDO zSPI1_MISO C35 LED 3V3 680K-1% 2.2uH-DCR<0.1R-1.5A EN2 8 JTAG_TDI zSPI1_MOSI 8 9 1 1 1 1 1 18p DS2 default C11 R15 C12 EN3 18 X X O S 0 STATE STAT_LED R26 10u Ra 18p _ _ S K SI O B GND 2 T T N S M M P 4K7 LED B R16 Rb FB3 R R I I I I GND B GND 150K-1% 17 A A P P P P R37 JTAG_TCK Vout = 0.6*(1 + Ra
in „Einen Softcore (AVR) an andere FPGA anpassen?“ · FPGA, VHDL & Co. ·
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PDF
I2C_Wandler_an97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „BSS138 Level shifter“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Pegelwandler_Mosfet_an97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „2x level shift in Reihe“ · Mikrocontroller und Digitale Elektronik ·
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PDF
I2C_Wandler_an97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „OLED Display 2.42'' SSD1309 SPI mit oder ohne Level Shifter“ · Mikrocontroller und Digitale Elektronik ·
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PDF
an97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „[I2C] Bus abkoppeln“ · Mikrocontroller und Digitale Elektronik ·
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PDF
I2C_Wandler_an97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „ESP32 und ADS1115/MCP4725: 5Vcc für ADC und DAC möglich?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
I2C_Wandler_an97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „3.3 Volt vs 5 Volt“ · Mikrocontroller und Digitale Elektronik ·
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PDF
I2C_Wandler_an97055.pdf
N-channel enhancement mode MOS-FET. Gate threshold voltage : VGS(th) min. 0.1V max. 2V On resistance : R DS(on) max. 100 Ohm @ I = DmA, V = 2GSV Input capacitance : C iss max. 100 pF @ V DS1V, V GS= 0V Switching times : ton off max. 50 ns. Allowed drain current : D 10 mA or higher. Values of pull-up resistors
in „BSS138 vs 2N7002“ · Mikrocontroller und Digitale Elektronik ·
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PDF
sed1335f.pdf
SED1330 Timing Diagrams 4.4.2 System bus READ/WRITE timing II (6800) CYC6 E tAW6 EW R/W tAH6 A0, CS DS6 tDH6 D0~D7 (WRITE) ACC6 OH6 D0~D7 (READ) Figure 33. System bus READ/WRITE timing II (6800) 4.4.2.1 SED1330F Ta = –20 to 75°C Rating Signal Symbol Parameter Unit Condition min max A0, CS tH6 Address
in „SP14Q002-A1 aus eBay - Erfahrungsaustausch“ · Mikrocontroller und Digitale Elektronik ·