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PDF
IRLU2905.pdf
175°C 1 1 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.0 60 ) Α TJ= 25°C ( 50 T J 175°C ( e n n r t u100.0 T J 175°C u 40 C n r c u s 30 TJ= 25°C S r t T n 10.0 r a a 20
in „Batterieschutzschaltung. Murks oder möglich?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Infineon-IRFP4668-DataSheet-v01_01-EN.pdf
On-Resistance vs. Temperature 16000 16 VGS = 0V, f = 1 MHZ ID= 81A Ciss = gs+ Cgd CdsSHORTED ) C = C ( V DS= 160V rss gd e V = 100V 12000 Coss = ds+ Cgd a 12 DS F C o V DS= 40V ( iss V e c n u i 8000 o 8 a o p - C a , G C , 4 4000 G C V oss Crss 0 0 0 40 80 120 160 200 1 10 100 Q Total Gate Charge (nC) V ,
in „Ersatz Mosfet für 6kw Wechselrichter "Reliable/WZRELB"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
TE28F128J3D75.pdf
= 2.7 V–3.6 V # Sym Parameter Density Min Max Unit Notes 32 Mbit 75 1,2 64 Mbit 75 1,2 R1 tAVAV Read/Write Cycle Time ns 128 Mbit 75 1,2 256 Mbit 95 1,2 32 Mbit 75 1,2 64 Mbit 75 1,2 R2 tAVQV Address to Output Delay ns 128 Mbit 75 1,2 256 Mbit 95 1,2 32 Mbit 75 1,2 64
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sct2080ke-e.pdf
Fig.9 Typical Transfer Characteristics (II) 100 40 VDS= 10V V DS= 10V Pulsed 35 Pulsed 10 30 ] ] [ [ D D 25 : Ta= 150ºC : n 1 Ta= 75ºC n 20 e T = 25ºC e Ta= 150ºC u a u Ta= 75ºC C Ta= 25ºC C 15 Ta= 25ºC i i T = 25ºC r 0.1 r 10 a D D 5 0.01 0 0 2 4 6 8 10 12 14 16
in „Datenblatt fraglich?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MPT2P50E.pdf
1.5 A1.5 R R , 5 V , ID 1 I 1 0.5 0.5 4 V 0 0 0 4 8 12 16 20 24 28 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS , GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics ) ) S M H 10 H 6 ( VGS = 10 V ( TJ= 25⋅C E C 5.75 N 8 TJ=
in „Ersatztypen für Diode“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP4821-MCP4822.pdf
1.75 5.0V m 2.7V s ( 14 V r 1.5 T DD s 1.25 4.0V R 13 y S I 1 I S 0.75 2.7V T 12 N O V 0.5 I 11 0.25 0 10 -40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120 Ambient Temperature (ºC) Ambient Temperature
in „Digital-Analog-Umsetzer (10V -> 1mV Auflösung)“ · Mikrocontroller und Digitale Elektronik ·
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PDF
datasheet.pdf
On-State Resistance (VGS = 10V, 0.5D[Cont.] 0.011 Ohms Zero Gate Voltage Drain Current (= V , V = 0V) I DS DSS GS 250 A DSS Zero Gate Voltage Drain Current (= 0.8 V , V = 0V, T = 125°C) 1000 DS DSS GS C GSS Gate-Source Leakage Current (GS= ±30V, VDS = 0V) ±100 nA VGS(th) Gate Threshold Voltage DS = VGS, D
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BSS138.pdf
Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage BV DSS 50 75 ¾ V VGS = 0V, D = 250mA Zero Gate Voltage Drain Current IDSS ¾ ¾ 0.5 µA VDS = 50V, GS = 0V Gate-Body Leakage IGSS ¾ ¾ ±100 nA V = ±20V, V = 0V GS DS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage
in „Logic Level Hype“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Si2303.pdf
DS D 2.0 S Diode Forward Voltage VSD S = - 0.75 A, GS = 0 V - 0.85 - 1.2 V Dynamic b Total Gate Charge Q g 4.3 10 Gate-Source Charge Qgs VDS = - 15 V, GS = - 10 V,DI ≅ - 1.7 A 0.8 nC Gate-Drain Charge Q
in „Highside-Switch gesucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
SH367107X_BMS_IC.pdf
11) V CN= VOV50mV IVCN VCN脚消耗电流 -1 1 uA (N = 2-5, 7-10, 12-15) R VM VM管脚内部下拉电阻 250 500 750 KΩ 电阻 R DS DS管脚内部上拉电阻 25 50 75 KΩ 26 SH367105/106/107/108 9.3直流电气特性 电气特性在( -40° ～85 ° 范围内测得 ) 类别 符号 描述 最小值 典型值 最大值 单位 说明 T 过充电保护电压温度系数 -1 0 1 mV/°C COV 过充电 T COVR 过充电保护解除电压温度系数 -1 0 1 mV/°C OV 过充电保护延时 0.5 1 1.5
in „WER KENNT DIESES 10S BMS von 36V Lion Akku vom Hersteller GW.“ · Mikrocontroller und Digitale Elektronik ·
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PDF
NDT455N.pdf
Drain-SourceBreakdownVoltage V = 0 V, I = 250 µA 30 V DSS GS D I ZeroGateVoltage DrainCurrent V = 24 V, V = 0 V 1 µA DSS DS GS T = 55°C 10 µA J I Gate-BodyLeakage,Forward V = 20 V, V = 0 V 100 nA GSSF GS DS I Gate-BodyLeakage,Reverse V = -20 V, V = 0 V -100 nA GSSR GS DS ON CHARACTERISTICS (Note2) V GateThresholdVoltage V
in „Fairchild 918 455 -> Ersatz?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sct2750ny-e.pdf
Threshold Voltage Fig.11 Transconductance vs. Drain Current vs. Junction Temperature 5 1 ] 4.5 VGS= VDS V DS= 10V [ D = 0.63mA Pulsed ( 4 ] S [ V 3.5 f : : g 3 e t n o 2.5 t 0.1 V u l 2 d h o e 1.5 s Ta= 175ºC h n Ta= 125ºC T 1 r T = 75ºC t T Ta= 25ºC a 0.5 a G Ta= 25ºC 0 0.01 -50 0 50 100 150 200 0.01 0.1
in „"Leiterbahn-Sicherung" erstezen - was würdet ihr tun?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irlb3034pbf-Datasheet.pdf
g GS C iss Input Capacitance ––– 10315 ––– VGS = 0V C Output Capacitance ––– 1980 ––– V = 25V oss DS C rss Reverse Transfer Capacitance ––– 935 ––– pF ƒ = 1.0MHz C eff. (ER) ––– 2378 ––– V = 0V, V = 0V to 32V i oss Effective Output Capacitance (Energy Related)i GS DS C osseff. (TR)Effective Output Capacitance
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PDF
IRLB3034PbF.pdf
g GS C iss Input Capacitance ––– 10315 ––– VGS = 0V C Output Capacitance ––– 1980 ––– V = 25V oss DS C rss Reverse Transfer Capacitance ––– 935 ––– pF ƒ = 1.0MHz C eff. (ER) ––– 2378 ––– V = 0V, V = 0V to 32V i oss Effective Output Capacitance (Energy Related)i GS DS C osseff. (TR)Effective Output Capacitance
in „Aufwärtsschaltregler bauen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLB3034.pdf
g GS C iss Input Capacitance ––– 10315 ––– VGS = 0V C Output Capacitance ––– 1980 ––– V = 25V oss DS C rss Reverse Transfer Capacitance ––– 935 ––– pF ƒ = 1.0MHz C eff. (ER) ––– 2378 ––– V = 0V, V = 0V to 32V i oss Effective Output Capacitance (Energy Related)i GS DS C osseff. (TR)Effective Output Capacitance
in „Logic Level Mosfet - Welcher "kann mehr"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM2585.pdf
Supply Current Reference Voltage Reference Voltage vs Temperature vs Temperature vs Supply Voltage DS012515-2 DS012515-3 DS012515-4 Supply Current Current Limit Feedback Pin Bias vs Switch Current vs Temperature Current vs Temperature DS012515-5 DS012515-6 DS012515-7 5 www.national.com 5 5 2 Typical
in „12V + 12V = 24V ?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF8736.pdf
On-Resistance Vs. Temperature www.irf.com 3 IRF8736PbF 10000 V = 0V, f = 1 MHZ 5 GS D = 14.4A Ciss= Cgs+ gd, ds SHORTED ) Crss= Cgd ( VDS = 24V C = C + C g 4 V = 15V ) oss ds gd l DS p Ciss o ( e c r 3 t o c 1000 - p t a Coss t 2 , a C , S 1 Crss VG 0 100 1 10 100 0 4 8 12 16 20 V , Drain-to-Source Voltage (V)
in „IRF8736 - Was haltet Ihr davon?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRF_1404_S.pdf
Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 4 www.irf.com IRF1404S/L R 200 V D LIMITED BY PACKAGE DS VGS 160 D.U.T. R G + A - DD
in „Geiger Counter Sparkfun“ · Mikrocontroller und Digitale Elektronik ·
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PDF
RequiresAcrobat6.pdf
from http://www.datasheetarchive.com. GF9926 Dual N-Channel Enhancement-Mode MOSFET LowV GS(th) V DS 20V R DS(ON) 30 ΩmI 6.0AD H C ® E N T R E T F D1 D1 D2 D2 E N 8 7 6 5 G SO-8 0.189 (4.80) Q1 Q2 8 5 1 2 3 4 0.157 (3.99) 0.150 (3.81) S1 G1 S2 G2 0.244 (6.20) 0.228 (5.79) 1 4 Dimensions in inches 0.05
in „Ersatz-MosFet für GF9926“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
mcp3424.pdf
Offset Error vs. FIGURE 2-6: Gain Error vs. Temperature. Temperature. © 2009 Microchip Technology Inc. DS22088C-page 9 MCP3422/3/4 Note: Unless otherwise indicated, T = -40°C to +85°C, V = +5.0V, V = 0V, CHn+ = CHn- = V /2, A DD SS REF V INCOM = V REF /2. 200 3 Data Rate = 3.75 SPS 180 ) VDD= 5.5V % 2 160
in „Sensorplatine MPX4115 DS1621 HIH5030 - Schaltungskontrolle“ · Mikrocontroller und Digitale Elektronik ·
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PDF
SI4946CDY.pdf
1000 o 1.4 1000 V ( e e 6 e e e c e e l u l l l n l l d o s n d s 1.2 V GS= 4.5 V, 4.6 A s n 2 - 4 V DS= 48 V 1 2 2 s 1 2 - R t 100 n 1.0 100 G O - 2 -) G ( 0.8 V D R 0 10 0.6 10 0 1.1 2.2 3.3 4.4 5.5 -50 -25 0 25 50 75 100 125 150 Q g Total Gate Charge (nC) T J Junction Temperature (°C) 2nd line 2nd line
in „Frage zu Ic SI4948“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
sqjq160e.pdf
noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage V DS VGS = 0, D = 250 μA 60 - - V Gate-source threshold voltage V GS(th) VDS = VGS, D = 250 μA 2 3 3.5 Gate-source leakage I V = 0 V, V = ± 20 V - - ± 100 nA GSS DS GS V GS = 0 V V DS= 60 V - - 1 Zero gate
in „Hilfe mit MOSFET Datenblatt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
lt1153.pdf
VS= 18V S 15 V = 18V S300 T 1.O 10 S 200 P 0.8 V = 5V I 5 100 S 0.6 VS= 5V 0 0 0.4 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 TEMPERATURE (°C) TEMPERATURE (°C) TEMPERATURE (°C) LTC1153 • TPC10 LTC1153 • TPC11 LTC1153 • TPC12 4 LTC1153 W U T P CA L PER F O R A C E
in „TPS61175 Overccurent Protection Mode“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MOSFET_Texas_Instruments.pdf
, L = 0.1 mHG R = 25 Ω 156 mJ (1) Max R θJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%. R DS(on) vs V GS Gate Charge 10 10 ) 9 T C 25°C, ID = 100 A 9 ID= 100 A : T C 125°C, ID = 100 A V V DS= 20 V ( 8 e 8 c a a 7 o 7 i V e 6 c 6 R u a 5 S 5 S 4 t 4 n t - 3 a 3 n - S 2 S 2 D V R 1 1 0 0 0 2 4
in „Übertragung eines Pspice-Makromodells(OpV) in LTSpice“ · Mikrocontroller und Digitale Elektronik ·
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PDF
ds_22.pdf
messer mm messer messer mm mm DS110 1,9 0,7 18 5 13 510 99 DS110 UNC 1,15mm/0,060‘‘ 0,63mm/0,025‘‘ 19mm/0,75‘‘ 0151352099 DS111 2,5 0,7 18 5 13 511 99 DS111 UNC 2,29mm/0,090‘‘ 0,63mm/0,025‘‘ 19mm/0,75‘‘ 0151352199 DS112 2,3 1,0 18 5 13 512 99 DS112 UNC 1,93mm/0,076‘‘ 0,91mm/0,036‘‘ 19mm/0,75‘‘ 0151352299 DS113 2,5 1,2 18 5 13 513 99 DS113 UNC 2,39mm/0,094‘‘ 1,14mm/0,045‘‘ 19mm/0,75‘‘ 0151352399 DS114 3,3 1,8 18 5 13 514 99 DS115 1,9 0,7 24,5
in „Fehleranalyse Entlötstation Weller VP 801 EC“ · Mechanik, Gehäuse, Werkzeug ·
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K4097.pdf
Voltage, V DS -- V IT12372 Gate-to-Source Voltage, V GS -- V IT12373 R DS (on) -- V GS R DS (on) -- Tc 2.0 1.6 ID= 5 A 1.8 1.4 Ω Ω - 1.6 - ) ) 1.2 o 1.4 o (S (S 1.0 D 1.2 D 5A r R, r R, ,ID= o c 1.0 o c 0.8 10V - t T c=75 °C - t S= t s 0.8 t s 0.6 V G i e i e r e 0.6 2 5°C r e D t D t 0.4 t S- 0.4 -25 °C t S- S On t n 0.2 0.2 S O 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 --50 --25 0 25 50 75 100 125 150 Gate-to-Source
in „MOSFET (K4097) Ersatztyp“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irl2203ns.pdf
≤ 1 µs i Duty Factor ≤ 0.1 % r , D40 I Fig 10a. Switching Time Test Circuit 20 V DS 90% 0 25 50 75 100 125 150 175 TC, Case Temperature ( C) ° 10% Fig 9. Maximum Drain Current Vs. V GS td(on) r d(off)f Case Temperature Fig 10b. Switching Time Waveforms 1 ) D =0.50 J t Z ( 0.20 s n p
in „FETs - 5V steuerspannung - selbstleitend selbstsperrend“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
AV02-0923EN-DS-ATF-55143-08Jun20120.pdf
15 20 25 30 35 0 5 10 15 20 25 30 35 I (mA) I (mA) I (mA) ds ds ds [1] [1] Figure 12. Fmin vs. I ds and V ds at 2 GHz. Figure 13. OIP3 vs. I ds and V ds at 2 GHz. Figure 14. IIP3 vs. Ids and V ds at 2 GHz. Notes: 1. Measurementsat2GHzweremadeonafixedtunedproductiontestboardthatwastunedforoptimalOIP3matchwithreasonablenoisefigure
in „LNA Entwicklung von 10 MHZ bis 6 GHZ“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
STP16NF_--_156110-da-01-en-PWRMOS_60V_16A_STP16NF06L_STM.pdf
Max. Unit V (BR)DSS Drain-source ID= 250 µA, GS = 0 60 V Breakdown Voltage IDSS Zero Gate Voltage V DS= Max Rating 1 µA Drain Current GS = 0) V DS= Max Rating TC= 125°C 10 µA Gate-body Leakage V GS= ± 16V ±100 nA IGSS Current (V = 0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(
in „Fragen zu Vorwiderständen (?) und MOSFET-Auswahl bei 12V-Steuerung am Raspberry Pi“ · Mikrocontroller und Digitale Elektronik ·
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PDF
TXSTM-POWERMOSFET-STX-16NF06L_EN.pdf
Max. Unit V (BR)DSS Drain-source ID= 250 µA, GS = 0 60 V Breakdown Voltage IDSS Zero Gate Voltage V DS= Max Rating 1 µA Drain Current GS = 0) V DS= Max Rating TC= 125°C 10 µA Gate-body Leakage V GS= ± 16V ±100 nA IGSS Current (V = 0) DS ON (1) Symbol Parameter Test Conditions Min. Typ. Max. Unit V GS(
in „TLC5940 (Arduino Mega) flackert. Wie Kondensatoren einsetzen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM2677_2000.pdf
12V Versions ISTBY Standby ON/OFF Pin = 0V Quiescent 50 100/150 µA Current ICL Current Limit 7 6.1/5.75 8.3/8.75 A I Output V = 40V, ON/OFF Pin = 0V 200 L IN 1 µA Leakage V SW ITCH= 0V 15 Current V = −1V 6 mA SW ITCH R DS(ON) Switch ISW ITCH= 5A 0.12 0.14/0.225 On-Resistance fO Oscillator Measured at Switch
in „On-Chip Induktivität“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
70044.pdf
Switch Analog Signal Range V Full –15 15 –15 15 V ANALOG Room 30 50 50 Drain-Source On-Resistance rDS(on) VD= "10 V, IS= –10 mA Full 75 75 Source Off Leakage Current I Room "0.1 –1 1 –5 5 S(off) Hot –100 100 –100 100 VS= "14 V, VD= #14 V Drain Off Leakage Current ID(off) Room "0.1 –1 1 –5 5 nA Hot –100
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PDF
IPB180P04P4.pdf
-6 10-5 10-4 10-3 10-2 10-1 100 -V DS[V] tp[s] Rev. 1.3 page 4 2011-04-27 Final Data Sheet IPB180P04P4L-02 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I = f(V ); T = 25°C R = f(I ); T = 25°C D DS j DS(on) D j parameter
in „wie pMOSFET für Strombegrenzung kühlen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
drv8350f_7_.pdf
The goal of this example is to set the V DS monitor to trip at a current greater than 75 A. According to the CSD19535KCS 100 V N-Channel NexFET ™ Power MOSFET data sheet, the R DS(on)value is 2.2 times higher at 175°C, and the maximum R DS(on)
in „BLDC-Motor: Überspannung beim Bremsen trotz Durchschaltung aller Low-Side-MOSFETs?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
P-MOSFETsi3445dv.pdf
V DS= - 10 V,DI = - 5.6 A 15 S a V I = - 1.7 A, V = 0 V Diode Forward Voltage SD S GS - 0.7 - 1.2 V b Dynamic Total Gate Charge Q g 15 25 Gate-Source Charge Qgs V DS= - 4 V, GS = - 4.5 VD I = - 5.6 A 3 nC
in „richtiger n-Kanal MOSFET, 3,3V soll 5V und 100mA schalten“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
05_TLV272CS-13.pdf
150.0 T S T S I F T 120.0 C O-2 U U T P 90.0 D U I IIO P 60.0 O I R 30.0 P W -3 0.0 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 E TEMPERATURE (°C) TEMPERATURE (°C) N Figure 1 Input Offset Voltage vs. Temperature Figure 2 Input Bias and Offset Current vs. Temperature ) 500 B100 ( VDD= 10V VDD
in „TLV272 Rail to Rail Problem DIODES“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
CS5343-44_F5.pdf
THD+N - -71 - - -75 - dB -60 dB - -31 - - -35 - dB Dynamic Performance for Automotive Grade VA = 3.1 V to 3.5 V and VA = 4.75 V to 5.25 V Min Typ Max Unit Interchannel Isolation - 90 - dB DC Accuracy Interchannel Gain Mismatch
in „Genesys 2 (Xilinx Kintex 7): Audio-Codec Implementierung und Filteranbindung“ · FPGA, VHDL & Co. ·
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PDF
IRLR7843C.pdf
2.0 120 a A l ID = 250µA t V e l r o 1.5 C 80 s n r r t D t 1.0 , a ID 40 G) t S 0.5 G V 0 0.0 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 TC , Case Temperature (°C) T J Temperature ( °C ) Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature Case Temperature 10
in „H-Brücke - 30A - MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
VMO1200-01F.pdf
[mΩ] 3 9 V normal. DS(on) 10 V 15 V 2 0.4 0.8 1 0.0 0.0 0 -50 -25 0 25 50 75 100 125 150 0 200 400 600 800 1000 T VJ [°C] ID [A] Fig. 5 Typ. drain source on-state resistance Fig. 5 Typ. drain source on-state resistance R
in „Impulsströme“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
VMO1200-01F.pdf
[mΩ] 3 9 V normal. DS(on) 10 V 15 V 2 0.4 0.8 1 0.0 0.0 0 -50 -25 0 25 50 75 100 125 150 0 200 400 600 800 1000 T VJ [°C] ID [A] Fig. 5 Typ. drain source on-state resistance Fig. 5 Typ. drain source on-state resistance R
in „Wie wähle ich Treiber für VMO1200-01F?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
74hct595.pdf
15 6.0 − ns 6.0 13 5.0 − ns su set-up time DS to SH_CP see Fig.9 2.0 50 11 − ns 4.5 10 4.0 − ns 6.0 9.0 3.0 − ns set-up time see Fig.8 2.0 75 22 − ns SH_CP to ST_CP 4.5 15 8 − ns 6.0 13 7 − ns h hold time DS to SH_CP see Fig.9 2.0 +3 −6 − ns 4.5
in „74HC595 wie steuert man das latch an?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
74HC595_Philips.pdf
15 6.0 − ns 6.0 13 5.0 − ns su set-up time DS to SH_CP see Fig.9 2.0 50 11 − ns 4.5 10 4.0 − ns 6.0 9.0 3.0 − ns set-up time see Fig.8 2.0 75 22 − ns SH_CP to ST_CP 4.5 15 8 − ns 6.0 13 7 − ns h hold time DS to SH_CP see Fig.9 2.0 +3 −6 − ns 4.5
in „Definierter Einschaltzustand beim 74HC595“ · Mikrocontroller und Digitale Elektronik ·
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PDF
74HC595_Shiftregister.pdf
15 6.0 − ns 6.0 13 5.0 − ns su set-up time DS to SH_CP see Fig.9 2.0 50 11 − ns 4.5 10 4.0 − ns 6.0 9.0 3.0 − ns set-up time see Fig.8 2.0 75 22 − ns SH_CP to ST_CP 4.5 15 8 − ns 6.0 13 7 − ns h hold time DS to SH_CP see Fig.9 2.0 +3 −6 − ns 4.5
in „Unterschied 74HCT595, 74HC595“ · Mikrocontroller und Digitale Elektronik ·
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PDF
74HC_HCT595.pdf
15 6.0 − ns 6.0 13 5.0 − ns su set-up time DS to SH_CP see Fig.9 2.0 50 11 − ns 4.5 10 4.0 − ns 6.0 9.0 3.0 − ns set-up time see Fig.8 2.0 75 22 − ns SH_CP to ST_CP 4.5 15 8 − ns 6.0 13 7 − ns h hold time DS to SH_CP see Fig.9 2.0 +3 −6 − ns 4.5
in „74HC595 und ATtiny13 Lauflicht“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Infineon_IRLB8721_DataSheet_v01_01_EN-3363432.pdf
On-Resistance vs. Temperature www.irf.com 3 IRLB8721PbF 10000 14 V GS = 0V, f = 1 MHZ ID= 25A C iss= gs + gd, dsSHORTED ) C = C ( 12 V DS= 24V rss gd g V = 15V ) C oss= ds + gd t DS F Ciss o 10 ( 1000 V c r 8 a Coss u c S a t 6 a Crss e , 100 a C , 4 S G V 2 0 10 1 10 100 0 4 8 12 16 20 24 28 V , Drain-to-Source
in „LED Ansteuerung für Lazertag Projekt“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IOR__IRFR6215.pdf
nA V GS= -20V Qg Total Gate Charge ––– ––– 66 ID= -6.6A Qgs Gate-to-Source Charge ––– ––– 8.1 nC V DS= -120V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 35 V GS= -10V, See Fig. 6 and 13 d(on) Turn-On Delay Time ––– 14 ––– V DD= -75V r Rise Time ––– 36 ––– ID= -6.6A d(off) Turn-Off Delay Time ––– 53 –
in „wie 24V-Busspannung mit 3,3V schalten?“ · Mikrocontroller und Digitale Elektronik ·
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Datei
Plotclock_v1_2.ino
instructions on how to hook up a real time clock, // see here -> http://www.pjrc.com/teensy/td_libs_DS1307RTC.html // DS1307RTC works with the DS1307, DS1337 and DS3231 real time clock chips. // Please run the SetTime example to initialize the time on new RTC chips and begin running. #include <Wire.h> #include <DS1307RTC.h> // see http://playground.arduino.cc/Code/time #endif int servoLift = 2500; Servo servo1; // Servo servo2; // Servo servo3; // volatile double lastX = 75; volatile double lastY = 47.5; int last_min
in „Plotclock zusammenbauen und programmieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irlml6401.pdf
Q G Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A t e )100 r ( u 10 n n TJ= 150 C e 10us
in „CMOS Transistoren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLML6401.pdf
Q G Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A t e )100 r ( u 10 n n TJ= 150 C e 10us
in „parasitäres Glimmen beim LED-Muxing. Transistoren? Einstreuungen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLML6401.pdf
Q G Total Gate Charge (nC) DS Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) A t e )100 r ( u 10 n n TJ= 150 C e 10us
in „LED Multiplexer glimmt“ · Mikrocontroller und Digitale Elektronik ·