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PDF
infineon-irf1010e-mosfet.pdf
20 VGS = 0V, f = 1 MHZ D = 50A C = C + C , C SHORTED iss gs gd ds V V DS= 48V 5000 Crss= Cgd ( 16 V DS= 30V C = C + C g V DS= 12V oss ds gd l F4000 Ciss o ( V c c 12 t u c3000 o p Coss o a - 8 ,2000 t C G , S 4 1000 Crss VG FOR TEST
in „DC Wandler wiederbeleben“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
0900766b81417515.pdf
Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current 1,400 10,000 1,200 f = 1MHz A (1,000 T = 150°C ) T A F1,000 N ( R E Ciss R N 800 U TA= 125°C A C I G 100 A 600 A T = 85°C P K A A E , , C 400 S I 10 A = 25°C 200 Coss 0 Crss 1 0 5 10 15 20 25 30 35 5 10 15
in „Datenblatt DMG4511SK4 COMPLEMENTARY PAIR MOSEFT“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irfh4210pbf.pdf
ID= 50A a A i 1.6 VGS = 10V t e e R r 100 n 1.4 C O ) e c e r TJ= 150°C u l o S 1.2 - o r - T = 25°C n N i 10 J a 1.0 r D , ) ID o V = 15V S 0.8 DS D 60µs PULSE WIDTH R 1.0 0.6 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 VGS
in „Akkubohrschrauber 10,8V von Makita und Metabo“ · Mechanik, Gehäuse, Werkzeug ·
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PDF
MCP1403.pdf
. FIGURE 2-6: Propagation Delay vs. Input Temperature. Amplitude. © 2007 Microchip Technology Inc. DS22022B-page 5 MCP1403/4/5 Typical Performance Curves (Continued) Note: Unless otherwise indicated, T = +A5°C with 4.5V ≤ V DD ≤ 18V. 100 0.5 CLOAD= 1800 pF ) s 90 t A ( D1 (0.4 Both Inputs = 1 a 80 n
in „MOSFET mit Treiber Verständnisproblem“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
mt9v403_ds.pdf
] Row Row Row Row Row ) ) Row Row Row Row Row Row Row Row Row Row ) ) Row Row Row Row Row (output) 400 300 301 302 303 ) ) 395 396 397 398 399 400 300 301 302 303 ) ) 395 396 397 398 399 Start Stop Row Row 09005aef80c07280 Micron Technology, Inc., reserves the right to change products or specifications
in „Wer hat Interesse an CMOS Bildsensoren?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MPT2P50E.pdf
, snubbing reduces switching losses. td(off)= R G iss In (VGG GSP ) 1800 V = 0 V V = 0 V 1000 1600 DS GS TJ= 25⋅C VGS = 0 V Ciss Ciss TJ= 25⋅C 1400 F ) (1200 ( 100 C E A1000 Ciss N C C 800 I oss P A C 600 Crss A 10 C , Crss 400 C Coss 200 Crss 1 010 5 0 5 10 15 20 25 10 100 1000 V V V , DRAIN-TO-SOURCE
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MOSFET-irfiz34v.pdf
Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.5 ID= 30A c A n 3.0 t s n T = 25 C s r J e 2.5 u100 n C O d c TJ= 175 C e z 2.0 u r la S o m o - o 1.5 - t N( i 10 i r r 1.0 D D ,D ,) I o 0.5 S V DS = 50V D V =10V 20µs PULSE WIDTH R 0.0 GS 1 4 5 6 7 8 9 10 11
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Datei
Bootloader230.a51
DBIT 1 ; new extension bit for disable verify on bootloader dseg at 0x21 ; gloabal vars wValueLo: ds 1 ; 0x21 BootKey: ds 8 ; 0x22 Marker0: ds 1 ; 0x2A rlen: ds 1 ; 0x2B reqlen: ds 1 ; 0x2C cmdbuffer: ds 64 ; 0x2D ds 2 ; 0x6d spare bRequest: ds 1 ; 0x6F SnSum: ds 1 ; 0x70 DescAddr: ds 2 ; 0x71 CAddr: ds 2 ; 0x73 Marker1: ds 1 STACK: xseg at 0 EP0_BUFFER: ds 8 ; 0x0000 the control endpoint ds 4 ; spare EP2_BUFFER: ds 64 ; 0x000C bulk out Response: ds 64 ; 0x004C bulk in cseg at StartAddress ; bootloader
in „uC für 0,20€ CH552 / CH554 von WCH Billig Micro mit USB Funktion, Chip vorstellung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
si1539cd.pdf
V,GS = 0 V,JT = 55 °C N-Ch 10 V DS= - 30 V,GS = 0 V,JT = 55 °C P-Ch - 10 V =5 V, V = 10 V b I DS GS N-Ch 2 A On-State Drain Current D(on) V = -5 V, V = - 10 V P-Ch - 1 DS GS VGS = 10 V,DI = 0.6 A N-Ch 0.323 0.388 b VGS=
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PDF
BSP308.pdf
2.5 0.8 2.0 0.6 1.5 0.4 1.0 0.2 0.5 0.0 0.0 0 20 40 60 80 100 120 °C 160 0 20 40 60 80 100 120 °C 160 TA T A Safe operating area Transient thermal impedance ID= f ( V DS ) Z thJA = f(tp) parameter : D = 0 , T = 25 AC parameter : D = t /T p BSP308 BSP308 102
in „Suche Depletion Mode Fet, n-Kanal, low Rds on oder Alternative“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DBLS201G_DBLS209G_TSC.pdf
°C STG Note 1: Pulse Test with PW=300μs,1% Duty Cycle Document Number: DS_D1310039 Version: I15 DBLS201G - DBLS209G Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE PART NO. PACKING PACKAGE
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PDF
LM35.pdf
1 mA load n with improved accuracy). The LM35 series is available pack- s o Typical Applications s DS005516-4 DS005516-3 Choose R1= −VS/50 µA FIGURE 1. Basic Centigrade Temperature Sensor V OUT=+1,500 mV at +150˚C (+2˚C to +150˚C) = +250 mV at +25˚C = −550 mV at −55˚C FIGURE 2. Full-Range Centigrade
in „ADC schwankungen bei Atmega16“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM35.pdf
1 mA load n with improved accuracy). The LM35 series is available pack- s o Typical Applications s DS005516-4 DS005516-3 Choose R1= −VS/50 µA FIGURE 1. Basic Centigrade Temperature Sensor V OUT=+1,500 mV at +150˚C (+2˚C to +150˚C) = +250 mV at +25˚C = −550 mV at −55˚C FIGURE 2. Full-Range Centigrade
in „Flinker Temperatursensor“ · Mikrocontroller und Digitale Elektronik ·
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PDF
datasheet.pdf
S P F M ( ( 100 E10,000 C oss T 50 1mS N N A R I 5,000 R A C rss C 10mS P N 10 C A , R 5 TC=+25°C 100mS C , TJ=+150°C DC ID SINGLE PULSE 1,000 1 500 1 5 10 50 100 200 .01 .1 1 10 50 V DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS,
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PDF
24lc32a.pdf
DATA T MASTER R BYTE HIGH BYTE LOW BYTE R BYTE BYTE O T T P SDA LINE 0 0 0 0 A A A A N BUS ACTIVITY C C C C O K K K K A C K FIGURE 6-3: SEQUENTIAL READ S BUS ACTIVITY T MASTER CONTROL DATA n DATA n + 1 DATA n + 2 DATA n + xO BYTE P SDA LINE A A A A N C C C C O BUS ACTIVITY K K K K A C K DS21144B-page
in „Logikanalzyer mit FT232BL“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irl7833.pdf
, ) D o I TJ= 25°C S V DS = 15V D 20µs PULSE WIDTH R 10 0.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 T , Junction Temperature (°C) VGS , Gate-to-Source Voltage (V) J Fig 3. Typical Transfer
in „Beschaltung Mosfet für Brushless-Regler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ALD110800-1489.pdf
400 10 400 pA VGS = -1.0V, DS =+5V V = -5V 4 4 nA TA = 125°C Gate Leakage Current I 5 200 5 200 pA V = 0V V = +5V GSS DS GS 1 1 nA TA=125°C Input Capacitance CISS 2.5 2.5 pF Transfer Reverse Capacitance
in „Radiobasteln - Was hat 2018 noch Aussicht auf Erfolg ?“ · HF, Funk und Felder ·
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PDF
MC34151D.pdf
hysteresis. brought to 10 V with respect to the source. The graph shows that a gate charge g of 110 nC is required when operating Power Dissipation the MOSFET with a drain to source voltage V of 400 V. Circuit performance and long term reliability are enhanced DS with reduced die temperature. Die temperature
in „Mosfet Treiber Baustein“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PHOTOMOS_RELAIS_AQY_1A_400MA_60V.pdf
0.1 0.2 0.3 D -20 Voltage, V Voltage, V L1.1 30mA -40 -0.5 20mA -60 10mA -80 1.0 5mA -1 -100 -120 0 -140 -1.5 -40 -20 0 20 40 60 8085 Ambient temperature, °C ds_x615_en_aqy21eh: 181206J 3 GU-E PhotoMOS (AQY21PEH) 8-(3). Current vs. voltage characteristics of 9-(1). Off state
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PDF
504859-da-01-en-PHOTOMOS_RELAIS_AQY_1A_130MA_350V.pdf
0.1 0.2 0.3 D -20 Voltage, V Voltage, V L1.1 30mA -40 -0.5 20mA -60 10mA -80 1.0 5mA -1 -100 -120 0 -140 -1.5 -40 -20 0 20 40 60 8085 Ambient temperature, °C ds_x615_en_aqy21eh: 181206J 3 GU-E PhotoMOS (AQY21PEH) 8-(3). Current vs. voltage characteristics of 9-(1). Off state
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PDF
0900766b811675e1.pdf
0.1 0.2 0.3 D -20 Voltage, V Voltage, V L1.1 30mA -40 -0.5 20mA -60 10mA -80 1.0 5mA -1 -100 -120 0 -140 -1.5 -40 -20 0 20 40 60 8085 Ambient temperature, °C ds_x615_en_aqy21eh: 181206J 3 GU-E PhotoMOS (AQY21PEH) 8-(3). Current vs. voltage characteristics of 9-(1). Off state
in „Heizung PT1000 durch pmoddpot ersetzen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
504846-da-01-en-PHOTOMOS_RELAIS_AQY_1A_400MA_60V.pdf
0.1 0.2 0.3 D -20 Voltage, V Voltage, V L1.1 30mA -40 -0.5 20mA -60 10mA -80 1.0 5mA -1 -100 -120 0 -140 -1.5 -40 -20 0 20 40 60 8085 Ambient temperature, °C ds_x615_en_aqy21eh: 181206J 3 GU-E PhotoMOS (AQY21PEH) 8-(3). Current vs. voltage characteristics of 9-(1). Off state
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PDF
lm2731.pdf
(continued) Unless otherwise specified: V = 5 IN SHDN pin tied to V . IN 100 100 90 90 80 80 70 % 70 ) ( ( 60 C 60 Y N C 50 I 50 I F I 40 F 40 F E E 30 30 20 20 10 10 0 0 0 50 100 150 200 250 300 0 200 400 600 800 1000 1200 1400 LOAD (mA) LOAD (mA) VIN = 2.7 V VOUT = 5 V VIN = 4.2 V VOUT
in „[V] 5St. Boost Reg. ADJ TI LM2731XMF 1,6Mhz 1,8A Switch (SOT23-5)“ · Markt ·
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PDF
24LC32A.pdf
parameter is periodically sampled and not 100% tested. 2: Typical measurements taken at room temperature. DS21713D-page 2 2003 Microchip Technology Inc. 24AA32A/24LC32A TABLE 1-2: AC CHARACTERISTICS VCC = +1.8V to +5.5V AC CHARACTERISTICS Industrial (I): TA = -40°C to +85°C Automotive (E): TA = -40°C to +
in „I2C Eeprom: Buskollisionen nach einem schnellen Reset“ · Mikrocontroller und Digitale Elektronik ·
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PDF
LM2937.pdf
+ 5V, (Note 4) I = 500 mA for the TO-220 and TO-263 packages, I =400mA for the SOT-223 pack- age, C NOM= 10 µF unless otherwise indicated. Boldface limits apply over the entire operating temperature range of the indicated device., all other specifications are for T =
in „Minimale Hardware zum Auto CAN-Bus abhören“ · Mikrocontroller und Digitale Elektronik ·
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PDF
uhp-ma_e.pdf
/A.C UL-DS2 JYd150/A.C 65×70 S350 JYd120/A.C SV1 JYd120/A.C 65×70 宝 LS1 JYd120/A.C UL-S520 JYd150/A.C ProAV9400 JYd120/A.C CP-DP5150 JYd150/A.C ProAV9400+ JYs400/A.C DP-9280 JYd120/A.C 施 ProAV9320 JYd400/
in „Beamer 'wiederverwerten'?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP73832T.pdf
BAT ) vs. Ambient Temperature (T ). A Supply Voltage (V DD ). ) 0.40 516 A RPROG= 2 kΩ t 0.35 +85°C A 514 n 0.30 m 512 r t u 0.25 -40°C e 510 e r 508 a 0.20 +25°C C a 0.15 e 506 e r 504 t 0.10 h p C 502 u 0.05 O 0.00 500 4.50 4.75 5.00 5.25 5.50 5.75 6.00 3.00 3.20 3.40 3.60 3.80 4.00 4.20 Battery
in „LiPo-Charger mit MCP73832T“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP73831-2_ENG_TDS.pdf
BAT ) vs. Ambient Temperature (T ). A Supply Voltage (V DD ). ) 0.40 516 A RPROG= 2 kΩ t 0.35 +85°C A 514 n 0.30 m 512 r t u 0.25 -40°C e 510 e r 508 a 0.20 +25°C C a 0.15 e 506 e r 504 t 0.10 h p C 502 u 0.05 O 0.00 500 4.50 4.75 5.00 5.25 5.50 5.75 6.00 3.00 3.20 3.40 3.60 3.80 4.00 4.20 Battery
in „LiPo-IC MCP73831 kennt keine Ladeschlussspannung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MB3775.pdf
Temp. :Ratio −30°C :0.95 to 1.05 90 10 +25°C :1.0 +80°C :0.95 to 1.05 ) ) e d AV ( V 0 0 φ A s i −30°C h G +25°C P −10 φ +80°C −90 −30°C −20 +80°C +25°C 1k 10k 100k 1M Frequency f (Hz) Fig. 28 - Film Capacitor (0.1 μF) 20 Temp. characteristic −30°C :0.9 to 1.1 90 A V +25°C :1.0 10 +80°C :0.9 to 1.1 g B d ( ( V 0 0 e n a a h G −30°C, +25°C, +80°C P −10 φ −90 −30°C, −20 +25°C +80°C 1k 10k 100k 1M Frequency f (Hz) DS04-27204-6E 23 MB3775 ■ EFFECT
in „Elko identifizieren (mal wieder)“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
K4B4G1646Q-Samsung.pdf
DQS tQH 0.38 - 0.38 - 0.38 - 0.38 - tCK(avg) 13, g DQ low-impedance time from CK, CK tLZ(DQ) -800 400 -600 300 -500 250 -450 225 ps 13,14, f DQ high-impedance time from CK, CK tHZ(DQ) - 400 - 300 - 250 - 225 ps 13,14, f 1.35V tDS(base) AC160 90 - 40 - - - - - ps d, 17 tDS(base) 140 - 90 - 45 - 25 -
in „Orange Pi - 15$ Quadcore SBC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
FMMT618.pdf
V CB= 10V, f=1MHz Turn-On Time - 170 - ns t(on) V CC= 10V, C = 1A, Turn-Off Time t(off) - 400 - ns IB1= -B2 = 10mA Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2% FMMT618 4 of 7 October 2012 Document number: DS33111 Rev. 5 - 2
in „Maximal Strom von Atmel-MCU erhöhen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
bts117.pdf
shutdown, D =0 A: IIN(3) V IN= 10 V Input holding current after thermal shutdown 1) IIN(H) T j 25 °C 500 - - T = 150 °C 300 - - j On-state resistance R mΩ DS(on) V IN= 5 V, ID= 3.5 A, Tj= 25 °C - 90 120 V IN= 5 V, ID= 3.5 A, Tj= 150 °C - 180 240 On-state resistance R DS(on) V IN= 10 V, ID= 3.5 A, T j 25 °C - 80 100 V IN= 10 V, ID= 3.5 A, T j 150 °C - 160 200 Nominal load current (ISO 10483) ID(ISO) 3.5 - - A V = 10 V, V = 0.5 V, T = 85 °C IN DS C 1If the input current is limited by external components,
in „BTS117 - maximale Schaltfrequenz?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
bts117.pdf
shutdown, D =0 A: IIN(3) V IN= 10 V Input holding current after thermal shutdown 1) IIN(H) T j 25 °C 500 - - T = 150 °C 300 - - j On-state resistance R mΩ DS(on) V IN= 5 V, ID= 3.5 A, Tj= 25 °C - 90 120 V IN= 5 V, ID= 3.5 A, Tj= 150 °C - 180 240 On-state resistance R DS(on) V IN= 10 V, ID= 3.5 A, T j 25 °C - 80 100 V IN= 10 V, ID= 3.5 A, T j 150 °C - 160 200 Nominal load current (ISO 10483) ID(ISO) 3.5 - - A V = 10 V, V = 0.5 V, T = 85 °C IN DS C 1If the input current is limited by external components,
in „Schaltung mit Taster starten“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BTS117.pdf
shutdown, D =0 A: IIN(3) V IN= 10 V Input holding current after thermal shutdown 1) IIN(H) T j 25 °C 500 - - T = 150 °C 300 - - j On-state resistance R mΩ DS(on) V IN= 5 V, ID= 3.5 A, Tj= 25 °C - 90 120 V IN= 5 V, ID= 3.5 A, Tj= 150 °C - 180 240 On-state resistance R DS(on) V IN= 10 V, ID= 3.5 A, T j 25 °C - 80 100 V IN= 10 V, ID= 3.5 A, T j 150 °C - 160 200 Nominal load current (ISO 10483) ID(ISO) 3.5 - - A V = 10 V, V = 0.5 V, T = 85 °C IN DS C 1If the input current is limited by external components,
in „Leistungsschalter für MC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BUK100-50GL_1.pdf
= 25 ˚C. Fig.12. Typical overload protection characteristics. D = f(V IS; conditions: V DS = 10 V; t =p250 s td sc f(P DS conditions: V ≥ 4 IS T = 25 ˚C.j gfs / S BUK100-50GL PDSM% 12 120 11 10 9 100 8 7 80
in „Beleuchtung mit 8515 ansteuern“ · Mikrocontroller und Digitale Elektronik ·
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PDF
AO4459.pdf
°C -5 IGSS Gate-Body leakage current V DS=0V, VGS ±20V ±100 nA V Gate Threshold Voltage V =V I =-250 A -1 -1.5 -2.5 V GS(th) DS GS D ID(ON) On state drain current V GS10V, V =DSV -30 A V GS10V, I =D6.5A
in „P-Mosfet sperrt nicht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
tk18a60v_en_datasheet_110131.pdf
V, f = 1 MHz 1600 pF iss DS GS Reverse transfer capacitance Crss 5 Output capacitance Coss 40 Effective output capacitance C o(er) VDS = 0 to 400 VGSV= 0 V 64 Gate resistance r V = OPEN, f = 1 MHz 10 Ω g DS Switching
in „Mosfet defekt - kann der Ersatztyp verwendet werden?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Ferritperlen.pdf
Capacitor Part Number Capacitance Ferrite Dimensions Insertion W.V. T.C. Beads Loss –25°C to +85°C FOR GENERAL APPLICATIONS DS310-55Y5S271M100 270pF ± 20% 100V DS310-55Y5S222M100 2200pF ± 20% 100V ±22% None Fig. 1 Fig. 4 DS310-55Y5S223S50 22000pF + 50%, –20% 50V DS310-55Y5S104M16
in „24Bit Delta-Sigma ADC-Eingang vor ESD und Überspannung schützen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
irfiz34n.pdf
Voltage (V) DS DS Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.4▯ID = 26A c ) a A i 2.0 t TJ= 25°C s n R r T = 175°C n u J O 1.6 C e ) c r e u 10 o li 1.2 o - a - t r t i N n r
in „Mosfet Treiber Baustein“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BMA456.pdf
Result 0 Secondary IF disabled (default) 1 AuxIF enabled The auxiliary sensor interface operates at 400 kHz. This results in an I2C readout delay of about 250 us for 10 bytes of data. The I2C slave address of the auxiliary sensor is defined in AUX_DEV_ID. i2c_device_addr. Document number: BST-BMA456-DS000
in „Datenlogger Pendeluhr“ · Mikrocontroller und Digitale Elektronik ·
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PDF
mosfet_K3673.pdf
voltaget V(BR)DSS ID=250 A VGS =0V 700 V Gate threshold voltage VGS(th) ID= 250 A VDS=V GS 3.0 5.0 V V DS=700V V GS=0V T c=25°C 25 µA Zero gate voltage drain current IDSS V DS=560V V GS=0V Tch=125°C 250 Gate-source leakage current IGSS V GS=±30V V DS=0V 100 nA Drain-source on-state resistance RDS(on) ID=
in „Mosfet K3673 01“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP4261-DigitalPot-2Fach-50kDATASHEET.pdf
85C DNL 125C DNL ) -40C DNL25C DNL 85C DNL 125C DNL W 100 0.2 W 100 ( ( 0.5 c DNL INL 0.1 ) c INL ) n s80 S n s80 S s m ( s m ( s h 0 o s h 0 o e (60 r e (60 r r -0.1 E r E p p DNL -0.5 i 40 25°C-40°C -0.2
in „Step Down Regler zu heiss & Fragen zur Umsetzbarkeit einer Schaltung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLB8748PBF.PDF
Cgd Cds SHORTED V = 24V Crss = Cgd V 12.0 DS C = C + C ( VDS = 15V oss ds gd g F C l 10.0 ( iss V c e n r 8.0 i 1000 o a - 6.0 a Coss - , t C G 4.0 , C G rss V 2.0 100 0.0 1 10 100 0 10 20 30 40 V , Drain-to-Source Voltage (V) Q , Total Gate Charge (nC) DS G Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R (on) DS ) ) t t n 100 TJ= 175°C n 100µsec
in „Funktionsprüfung MOSFET IRL B8748PbF“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Datasheet_MIC2875.pdf
are recommended. Human body model, 1.5 kΩ in series with 100 pF . 2015 Microchip Technology Inc. DS20005549A-page 3 MIC2875 TABLE 1-1: ELECTRICAL CHARACTERISTICS (Note 1) Electrical Characteristics:= 3.6V, V = 5V, C = 4.7 μF, C = 22 μF, L = 1 μH T = 25°C, bold values are IN OUT IN OUT A valid for –
in „MI2875 PG-PIN“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS3231.pdf
DS3231 Extremely Accurate I C-Integrated 2 RTC/TCXO/Crystal General Description Benefits and Features 2 The DS3231 is a low-cost, extremely accurate I C ●● Highly Accurate RTC Completely Manages All real-time
in „DS3231 vs PCF8573, hilfe gesucht !“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BTS141_DS_14.pdf
A: IN(3) 1000 2500 4000 V = 10 V IN Input holding current after thermal shutdown 1) IN(H) T j= 25 °C 500 - - T = 150 °C 300 - - j On-state resistance R mΩ DS(on) V IN= 5 V, ID= 12 A, T j 25 °C - 31 34 V IN= 5 V, ID= 12 A, T j 150 °C - 52 68 On-state resistance R DS(on) V IN= 10 V, ID= 12 A, T j 25 °C - 25 28 V IN= 10 V, ID= 12 A, T j 150 °C - 45 56 Nominal load current (ISO 10483) D(ISO) 12 - - A V = 10 V, V = 0.5 V, T = 85 °C IN DS C If the input current is limited by external components, low drain
in „BTS141 - welcher Pin ist mit dem Gehäuse verbunden“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LD7536R.pdf
Frequencyvs. Vcc Fig. 5 Frequency vs. Vcc 7 Leadtrend Technology Corporation www.leadtrend.com.tw LD7536R-DS-01a December 2011 LD7536R 85 0.90 80 0.88 ) ) ( 75 ( 0.86 t ) u o x (S a 70 C0.84 M V 65 0.82 60 0.80 -40 0 40 80 120 125 -40 0 40 80 120 125 Temperature (°C) Temperature (°C) Fig. 7 Max Duty vs. Temperature
in „DENON DN-508MX Netzteil defekt“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS3231.pdf
DS3231 Extremely Accurate I C-Integrated 2 RTC/TCXO/Crystal General Description Benefits and Features 2 The DS3231 is a low-cost, extremely accurate I C ●● Highly Accurate RTC Completely Manages All real-time
in „18650 Zelle zu 5V“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS3231_S_SN_Crystal.pdf
DS3231 Extremely Accurate I C-Integrated 2 RTC/TCXO/Crystal General Description Benefits and Features 2 The DS3231 is a low-cost, extremely accurate I C ●● Highly Accurate RTC Completely Manages All real-time
in „(empfindlicher) GPS Modul gesucht“ · Mikrocontroller und Digitale Elektronik ·
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2sk3142.pdf
Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 40 1000 ) ) 300 10 ( A 10 µs h ( 0µ c 30 D100 P s P I W = 1 30 D 10 ms n n CO m s t e per 1 a 20 r 10 ato ho i C Operation in n( ) i n this area is c = D a 3 25 l r limited by DS(on) C) n 10 D 1 n h C 0.3 0.1 Ta = 25°C 0 50 100 150 200 0.1 0.3 1 3 10 30 100 Case Temperature Tc (°C) Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics 100 100 VGS = 10 V Pulse Test V DS = 10 V 5 V ) 80 ) 80 Pulse Test ( 4 V ( D 3 V D I 60 I 60 t n n r
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