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70622B.pdf
= 16, FIFOFM = 0) Data RX (to SR)“noisy” data Preamble Sync b0 b1 b2 b3 b4 b5 b6 b7 b8 b9 b10 b11 b12 b13 b14 b15 b16 Start condition (FIFOFM) FIFOEMPTY FIFOFULL FOVRRUN WRITEBYTE 15 b15 b13 b14 b12 b11 b9 b10 FIFO b8 b6 b7 b5 b4 b2 b3 b1 0 b0 DS70622B-page 82 Preliminary © 2010 Microchip Technology
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70622B.pdf
= 16, FIFOFM = 0) Data RX (to SR)“noisy” data Preamble Sync b0 b1 b2 b3 b4 b5 b6 b7 b8 b9 b10 b11 b12 b13 b14 b15 b16 Start condition (FIFOFM) FIFOEMPTY FIFOFULL FOVRRUN WRITEBYTE 15 b15 b13 b14 b12 b11 b9 b10 FIFO b8 b6 b7 b5 b4 b2 b3 b1 0 b0 DS70622B-page 82 Preliminary © 2010 Microchip Technology
in „Wie genau funktioniert die drahtlose Kommunikation?“ · HF, Funk und Felder ·
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DS1220Y.pdf
ns Write Cycle Time t 100 ns WC Write Pulse Width tWP 75 ns 3 Address Setup Time tAW 0 ns tWR1 0 ns 12 Write Recovery Time t 10 ns 13 WR2 Output High-Z from WE ODW 35 ns 5 Output Active from WE OEW 5 ns 5 Data Setup Time t 40 ns 4 DS Data Hold Time tDH1 0 ns 12 tDH2 10 ns 13 4 of 9 NOT RECOMMENDED FOR NEW DESIGNS DS1220Y READ CYCLE SEE NOTE 1 WRITE CYCLE 1 SEE NOTES 2, 3, 4, 6, 7, 8 AND 12 WRITE CYCLE 2 SEE NOTES 2, 3, 4, 6, 7, 8 AND 13 5 of 9 NOT RECOMMENDED FOR NEW DESIGNS DS1220Y POWER-DOWN/POWER-UP CONDITION
in „[S] DALLAS DS1220Y-150 NVRAM (NOS)“ · Analoge Elektronik und Schaltungstechnik ·
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RGB_Bildsensor_-_D100997D.pdf
clock φ TG3 10 13 φTG1 Transfer gate clock 1 (for Red) 0 0 0 (for Blue) 0 0 0 Ground GND 11 1 1 1 12 φTG2 Transfer gate clock 2 (for Green) Caution Connect the No connection pins (NC) to GND. Data Sheet S15330EJ4V0DS 3 µPD8872 PHOTOCELL STRUCTURE DIAGRAM 2.75µm 2.5µm m 5 . Channel stopper 5 Aluminum
in „Pollin 1,95€ RGB Bildsensor - C-Mos Pegel“ · Mikrocontroller und Digitale Elektronik ·
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PDF
MCP2021.pdf
BB Element Sampling Network Fast Transient Loop Buffer V SS VREF 2012 Microchip Technology Inc. DS22298A-page 7 MCP2021A/2A FIGURE 1-4: 5.0V V REG VS. IREG AT FIGURE 1-5: 3.3V V REG VS. IREG AT VBB = 12V VBB = 12V 3.5 6 3 5 )2.5 ) ( ( 4 G 2 G R R 3 V1.5 40 C V 25 C 2 40 C 1 90 C 25 C 125 C 1 90 C
in „MCP2021 -> Welcher ESD Level wird erreicht“ · Mikrocontroller und Digitale Elektronik ·
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IRLU2905.pdf
Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com 3 IRLR/U2905ZPbF 2500 12 VGS = 0V, f = 1 MHZ ID= 36A Ciss = gs + gd, CdsSHORTED Crss = Cgd V 10 VDS = 44V 2000 C = C + C e VDS= 28V ) oss ds gd g VDS= 11V F l ( Ciss V 8 c 1500 e a r c o 6 a - a 1000 - , t 4 C G , 500 G 2 Coss
in „Batterieschutzschaltung. Murks oder möglich?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BLF188XR_BLF188XRS.pdf
IDq = 40 mA; f = 108 MHz; p = 100 s; = 20 %. Dq = 40 mA; f = 108 MHz; tp= 100 s; = 20 %. (1) V DS = 25 V (1) V DS = 25 V (2) V DS = 30 V (2) V DS = 30 V (3) V DS = 35 V (3) V DS = 35 V (4) V DS = 40 V (4) V DS = 40 V (5) V = 45 V (5) V = 45 V DS DS (6) V DS = 50 V (6) V DS = 50 V Fig 10. Power gain
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PDF
device_list_hilo_all03_v9-12.pdf
*CAT28F002B *CAT28F002T CAT28F010/I CAT28F010V5/I CAT28F020/I CAT28F512/I CAT28F512V5/I <<DALLAS>> DS1213B (2K*8) DS1213B (8K*8) DS1213C (32K*8) DS1213C (8K*8) DS1213D (128K*8) DS1213D (32K*8) DS1213D (512K*8) DS1213D (8K*8) DS1216B (2K*8) DS1216B/C/E (8K*8) DS1216C/D/E (32K*8) DS1216D/F (128K*8) DS1216F (32K*8) DS1216F (8K*8) DS1220Y/AB/AD DS1225AB/AD/D/E/Y DS1230Y/AB DS1235Y/AB DS1243Y DS1244Y DS1245EE DS1245Y/AB DS1248Y DS1286 DS12887 DS1386 (32K*8) DS1386 (8K*8) DS1387 DS1486 DS1630Y/AB DS1642 DS1643 DS1645EE
in „PROM programmieren“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Linear_Mode_Operation_and_Safe_Operating_Diagram_of_Power-MOSFETs.pdf
the R DS(on)imit-line is given as eq.1 @ , ° This means • For lower V GS voltages the R DS(on)limit-line will be lower since thDS(on)value increases with lower V GS voltages. The dependency of R vs V voltage
in „Gleichstromlast MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BSP308.pdf
09-22 Preliminary data BSP308 Typ. output characteristics Typ. drain-source-on-resistance ID= f (V DS ) R DS(on) = f (D ) parameter: t = 8p µs parameter: V GS BSP308 BSP308 12 Ptot 1.80W 0.16 b c A lij VGS [V] 10 ed a 2.0 b 2.5 9 c 3.0 n 0.12 d 3.5 ( 8 S D c e 4.0 D 0.10 I 7 f 4.5 R g 5.0 6 h 5.5 0.08
in „Suche Depletion Mode Fet, n-Kanal, low Rds on oder Alternative“ · Analoge Elektronik und Schaltungstechnik ·
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LDO.pdf
V OUT = 1.2 V) Figure 24. Line transient (V OUT = 5 V) Figure 25. Line transient (V OUT = 1.2 V) DS12022 - Rev 6 page 12/23 LDL1117 Typical characteristics Figure 26. Load transient (V OUT = 1.2 V) Figure 27. Load transient (V OUT = 5 V) DS12022 - Rev 6 page 13/23 LDL1117 Package information 8 Package
in „STM32 - 5V tolerante Pins bei Startup“ · Mikrocontroller und Digitale Elektronik ·
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PDF
176001-da-01-en-ic_lm317t.pdf
Regulator with Improved Ripple Rejection High Stability 10V Regulator DS009063-10 †Solid tantalum *Discharges C1 if output is shorted to ground DS009063-11 High Current Adjustable Regulator DS009063-12 ‡Optional — improves ripple rejection †Solid tantalum *Minimum load current
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PDF
176001-da-01-en-IC_LM317T.pdf
Regulator with Improved Ripple Rejection High Stability 10V Regulator DS009063-10 †Solid tantalum *Discharges C1 if output is shorted to ground DS009063-11 High Current Adjustable Regulator DS009063-12 ‡Optional — improves ripple rejection †Solid tantalum *Minimum load current
in „Spannungsregler“ · Mikrocontroller und Digitale Elektronik ·
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MBI5030.pdf
D3 D4 D5 D6 D7 D8 D9 D10 D11 D12 D13 D14 D15 Next Data Previous Data D0 D1 D2 SDO Read Configuration 2 3 5 6 8 9 11 12 14 15 DCLK 1 4 7 10 13 16 N1 N2 N3 LE SDI D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 D12 D13 D14 D15 Next Data SDO Previous
in „Atmega8+MBI5030+SPI“ · Mikrocontroller und Digitale Elektronik ·
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PDF
IRLR6225PBF_NMOS.pdf
Coefficient ––– -4.0 ––– mV/°C DS GS D DSS Drain-to-Source Leakage Current ––– ––– 1.0 µA V DS= 16V, VGS= 0V ––– ––– 150 V DS= 16V, VGS= 0V, TJ= 125°C GSS Gate-to-Source Forward Leakage ––– ––– 100 V GS= 12V Gate-to-Source Reverse Leakage ––– ––– -100 nA V GS= -12V gfs Forward Transconductance 205 ––– ––– S V DS= 10V, D = 21A Qg Total Gate Charge ––– 48 72 Q gs1 Pre-Vth Gate-to-Source Charge ––– 2.6 ––– V DS= 10V Q Post-Vth Gate-to-Source Charge ––– 3.6 ––– V
in „FET abgeraucht“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
LM317.pdf
Regulator with Improved Ripple Rejection High Stability 10V Regulator DS009063-10 †Solid tantalum *Discharges C1 if output is shorted to ground DS009063-11 High Current Adjustable Regulator DS009063-12 ‡Optional—improves ripple rejection †Solid tantalum *Minimum load current
in „Einfaches regelbares Netzteil mit LM350“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL3713.pdf
Normalized On-Resistance Vs. Temperature www.irf.com 3 IRL3713/S/L 14 I = 100000 V = 0V, f = 1 MHZ D 30A V DS = 24V GS V DS = 15V C iss = gs+ Cgd C ds SHORTED V 12 V DS = 6V C rss = gd ( C = C + C g oss ds gd l 10 F o (10000 V c Ciss c 8 n Coss u i o a - a - 6 C t C 1000 Crss a G 4 S G V 2 100 0 1 10 100 0 40
in „Logic Level Mosfet - Welcher "kann mehr"“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
MCP320412-bitA-DConverterDatasheet.pdf
MCP3208 Only CH1 2 M 15 VREF CH2 3 C 14 AGND CH3 4 3 13 CLK CH4 5 2 12 DOUT CH5 6 8 11 D CH6 7 10 IN CS/SHDN CH7 8 9 DGND 2002 Microchip Technology Inc. DS21298C-page 1 MCP3204/3208 1.0 ELECTRICAL PIN FUNCTION TABLE CHARACTERISTICS Name Function Absolute Maximum Ratings
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PDF
AVR-DD-Product-Brief-DS40002215A-1.pdf
SPIn SS EVSYS EVOUTx SDA (Master) SCL (Master) LUTn-OUT SDA (Slave) TWIn CCL LUTn-INn SCL (Slave) DS40002215A-page 7 © 2020 Microchip Technology Inc. Product Brief AVR DD Family Pinout 2. Pinout 2.1 14-Pin SOIC GND 1 14 VDD PF6(RESET) 2 13 PD7 PF7(UPDI) 3 12 PD6 PA0(XTAL1) 4 11 PD5 PA1(XTAL2) 5 10 PD4
in „AVR-DD im Anrollen“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Infineon-ApplicationNote_Linear_Mode_Operation_Safe_Operation_Diagram_MOSFETs-AN-v01_00-EN.pdf
the R DS(on)imit-line is given as 𝑉 𝐼𝐷𝑆 = 𝐷𝑆 eq.1 𝑅𝐷𝑆(𝑜𝑛)@𝑉𝐺𝑆=10𝑉,𝑇𝑗=150°𝐶) This means For lower V GS voltages the R DS(on)limit-line will be lower since thDS(on)value increases with lower
in „Problem mit N-MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
ATTiny1624.pdf
shared pin using high-voltage signal or fuse override © 2020 Microchip Technology Inc. Product Brief DS40002203A-page 5 ATtiny1624/1626/1627 Pinout 3. Pinout 3.1 14-Pin SOIC, TSSOP VDD 1 14 GND PA4 2 13 PA3 (EXTCLK) PA5 3 12 PA2 PA6 4 11 PA1 PA7 5 10 PA0 (UPDI/RESET) (TOSC1) PB3 6 9 PB0 (TOSC2) PB2 7 8
in „Neues Produkt AtTiny1624“ · Mikrocontroller und Digitale Elektronik ·
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PDF
20002019c.pdf
D65 a 15 n D2 F t 55 n 10 g a a i 5 r45 R P 0 35 -40 -25 -10 5 20 35 50 65 80 95 110 125 4 6 8 10 12 14 16 18 Temperature ( C) Supply Voltage (V) FIGURE 2-3: Rise and Fall Times vs. FIGURE 2-6: Propagation Delay vs. Temperature. Supply Voltage. 2006-2016 Microchip Technology Inc. DS20002019C-page
in „Pulsschweisgerät mit Auto Batt Schaltungs Verbesserung“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRLN540.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
in „HEXFET als Widerstand?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
IRL540N.pdf
Normalized On-Resistance Vs. Temperature IRL540N 3000 15 V GS=0V, f=1MHz ID = 18A C issC +Cgs C SHgdTED ds V DS = 80V C rssC gd C =C +C V DS = 50V oss ds gd 12 V DS = 20V C iss V e ) 2000 a ( l e V 9 n e i r c o p - 6 C - , 1000 C oss t C G , G3 C rss V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 20
in „Welcher R_DS(on) stimmt?“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DS_SJEP120R100_rev2.1.pdf
6 0 2 4 6 V , Drain-Source Voltage (V) VDS Drain-Source Voltage (V) DS Figure 3. Typical Output Characteristics Figure 4. Typical Transfer Characteristics ID= f(VDS; Tj= 150 °C; parameter: GS D = f(GS); DS = 5 V 15 35 ) ) ( 3.0 V ( 30 n 12 n e e 25 u 2.5 V u C 9 C 20 c
in „Siliziumkarbid-JFETS“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
2210280930_Diodes-Incorporated-AP63300WU-7_C2158012.pdf
Reset and UVLO vs. Temperature AP63300/AP63301 7 of 22 August 2019 Document number: DS42002 Rev. 3 - 2 www.diodes.com © Diodes Incorporated AP63300/AP63301 Typical Performance Characteristics (AP63300/AP63301 at T =A+25°C, VIN = 12V, VOUT = 5V, unless otherwise specified.) (continued)
in „Step-Down-Wandler pfeift sehr laut, was tun?“ · Digitale Signalverarbeitung / DSP / Machine Learning ·
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PDF
MCP1403.pdf
r 0.3 Both Inputs = 1 ( u - 5 t U e 0.2 O 4 TJ= +25 C s R i 0.1 Both Inputs = 0 u 3 Q 0 2 4 6 8 10 12 14 16 18 4 6 8 10 12 14 16 18 Supply Voltage (V) Supply Voltage (V) FIGURE 2-9: Quiescent Current vs. FIGURE 2-12: Output Resistance (Output Supply Voltage. Low) vs. Temperature. DS22022B-page 6 © 2007
in „MOSFET mit Treiber Verständnisproblem“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
PMBFJ620_1.pdf
−10 V; f = 1 MHz - 1.3 2.5 pF g common source input V = 10 V; I = 10 mA; f = 100 MHz - 200 - S is DS D conductance VDS = 10 V;DI = 10 mA; f = 450 MHz - 3 - mS g fs common source transfer VDS = 10 V;DI = 10 mA; f = 100 MHz - 13 - mS conductance VDS = 10 V;DI = 10 mA; f = 450 MHz - 12 - mS g common source
in „Doppelfet für Vorstufe“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
fsp204-2f01-sema_2.pdf
1 2 3 4 5 6 7 8 D S6 DS8 ! F1 FL1:2 ! FL2:1 FL3:1 L1 B A T2 4 ! BS1 RS18 L ! 43 21 21 ! N TC1 R2 CY 1 ! BD1 ! D 5 + C1 R 23 R10 T2:9 DS5 RS 14 Q S13 1 ! C 2 QS10 C ! RS 15 RS20 C7 C 8 L2 D 3 QS 5 QS 9 Z1 ! L5 T2:3 RS 12 ! C Y2 D 1 T2 11 DS 9 D6 T2 10 7 5 6 D 12 R1 34 34 C 29 R 41 T2:6 DS 7 S S S D N FL11 FL2 2 F L32 T3 2 D R R DS10 ! ! ! ! ! R39 Q S7 T31 L4 4 D10 D11 ZD S1 F G C25 RS 2 ! R36 L4:10 C9 Q42N 4401 SP08N80T25 QS16 CN 1 Q3 SPP08N80C
in „SNT FSP204-2F01(S7) Problem 24V Ausgang“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
DM8203.pdf
Ifbit53H.7=1:TOS[7:2]=0DH 1:0 TOSC PE0,RW Ifbit53H.7=1:TOS[7:2]=0CH 24 Preliminary datasheet DM8203-15-DS-P05 October23,2008 DM8203 2-port switchwithMII/RMIIInterface C4H: Bit Name Default Description 7:6 TOS13 PE1,RW Ifbit53H.7=1:TOS[7:2]=13H 5:4 TOS12 PE1,RW Ifbit53H.7=1:TOS[7:2]=12H 3:2 TOS11 PE1,RW Ifbit53H
in „2 Port Switch IC wie in IP telefonen?“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DM8203.pdf
Ifbit53H.7=1:TOS[7:2]=0DH 1:0 TOSC PE0,RW Ifbit53H.7=1:TOS[7:2]=0CH 24 Preliminary datasheet DM8203-15-DS-P05 October23,2008 DM8203 2-port switchwithMII/RMIIInterface C4H: Bit Name Default Description 7:6 TOS13 PE1,RW Ifbit53H.7=1:TOS[7:2]=13H 5:4 TOS12 PE1,RW Ifbit53H.7=1:TOS[7:2]=12H 3:2 TOS11 PE1,RW Ifbit53H
in „[V] DM8203 & DM8603“ · Markt ·
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PDF
BF245.pdf
MIN. TYP. MAX. UNIT VDS drain-source voltage − − ±30 V VGSoff gate-source cut-off voltage D = 10 nA; DS= 15 V −0.25 − −8 V VGSO gate-source voltage open drain − − −30 V I drain current V = 15 V; V = 0 DSS DS GS BF245A 2 − 6.5 mA BF245B 6 − 15 mA BF245C 12 − 25 mA Ptot total power dissipation Tamb= 75 °
in „Vorbereitung auf Klausur“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
1-SPD30N06S2L-13_1-1.pdf
gate voltage drain current DSS µA VDS =55V, GS=0V, Tj=25°C - 0.01 1 V =55V, V =0V, T =125°C - 1 100 DS GS j Gate-source leakage current I - 1 100 nA GSS VGS =20V, DS=0V Drain-source on-state resistance RDS(on) - 12.5 17 mW VGS =4.5V,DI =30A - 9.7 13 Drain-source on-state resistance RDS(on) V =10V, I =
in „Kuehlkoerper“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf3205.pdf
On-Resistance Vs. Temperature IRF3205 8000 VGS = 0V, f = 1MHz 20 C = C + C , C SHORTED ID = 59A 7000 iss gs gd ds ) Crss = C gd V V DS = 44V Coss = C ds+ C gd ( V DS = 28V 6000 g16 V = 11V F C iss t DS ( o e 5000 V c e12 a r i 4000 Coss u c S p - a 3000 - 8 , t C a G 2000 Crss , G 4 V 1000 FOR TEST CIRCUIT SEE FIGURE
in „Schaltung zu Kondensatorentladungsschweißen“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
rt8279.pdf
V SW (10V/Div) IOUT IL (2A/Div) (5A/Div) VIN 12V, VOUT = 5V,OUT = 2.5A to 5A V IN12V, V OUT= 5V, OUT= 5A Time (100µs/Div) Time (1µs/Div) DS8279-01 December 2011 www.richtek.com 7 RT8279 Power On from EN Power Off from EN V EN VEN (5V/Div) (5V/Div) V V OUT OUT (5V/Div) (5V/Div) IL IL (5A/Div) (5A/Div) VIN 12V, V OUT= 5V, OUT= 5A VIN 12V, VOUT = 5V,OUT = 5A Time (2.5ms/Div) Time (2.5ms/Div) www.richtek.com DS8279-01 December 2011 8 RT8279 Application Information The RT8279 is an asynchronous high voltage
in „Suche Schaltregler“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
Explanation_of_Data_Sheet_Parameters__INF.pdf
Collector-Gate Voltage V CGR . . . 15 2.3 Drain-Source-Spannung V . . 15 2.3 Drain-Source Voltage V . . . . 15 DS DS 2.4 Kollektor-Gleichstrom C . . . . . 15 2.4 DC Collector Current IC . . . . . . 15 2.5 Drain-Gleichstrom ID . . . . . . . . 12.5 DC Drain Current ID . . . . . . . . . 16 2.6 Kollektor-Strom, gepulstICpuls
in „Sperrstrom BJT vs. MOSFET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
BLF578.pdf
MHz; p = 100 s; = 20 %. Dq = 40 mA; f = 225 MHz; tp= 100 s; = 20 %. (1) V = 30 V (1) V = 30 V DS DS (2) V DS = 35 V (2) V DS = 35 V (3) V DS = 40 V (3) V DS = 40 V (4) V DS = 45 V (4) V DS = 45 V (5) V DS = 50 V (5) V DS = 50 V Fig 9. Power gain as a function of load power; Fig 10. Drain efficiency
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MCP1703_MIC.pdf
o o V 5.00 t 4.98 u 0°C -45°C u 0°C t 4.96 t 4.96 -45°C O +25°C O +25°C 4.92 4.94 4.88 4.92 6 8 10 12 14 16 18 0 50 100 150 200 250 Input Voltage (V) Load Current (mA) FIGURE 2-9: Output Voltage vs. Input FIGURE 2-12: Output Voltage vs. Load Voltage. Current. DS22049D-page 6 © 2009 Microchip Technology
in „Was ist das für ein IC“ · Mikrocontroller und Digitale Elektronik ·
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PDF
CS6422_F1.pdf
delta-sigma codecs. rms pp The CS6422 is intended to provide a full-duplex puts (which are biased around 2.12 VDC). A signal 10 DS295F1 CS6422 Receive Path NI 17 3 AO RGain ADC DAC (0,6,9.5,12 dB) D FAR-END S NEAR-END NO P API 4 DAC ADC TGain 34 dB 20 Mic 1kΩ (0,6,9.5,12 dB) Voltage CS6422 Reference 18 19 APO
in „Schaltung um Echo rauszufiltern“ · Mikrocontroller und Digitale Elektronik ·
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PDF
Datenblatt.pdf
Meters/Tachometer • Motor Control 14-Pin SOIC • FM Demodulation BIAS 1 14 VDD ZERO ADJ 2 13 NC IN 3 12 AMPLIFIER OUT TC9400 VSS 4 TC9401 11 DETECTORD TC9402 VREFOUT 5 10 FREQ/2 OUT GND 6 9 OUTPUT COMMON VREF 7 8 PULSE FREQ OUT NC = No Internal Connection © 2007 Microchip Technology Inc. DS21483D-page
in „Frequenz-Spannungswandler OP-Verstärkung“ · Mikrocontroller und Digitale Elektronik ·
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PDF
BMA456.pdf
ODR [Hz] 12.5 25 50 100 200 400 800 1600 3dB Cutoff frequency [Hz] 5.06 10.12 20.25 40.5 80 162 (155 324 684 for Z axis) (262 f(353 for Z axis) axis) Document number: BST-BMA456-DS000-07 Modifications reserved |
in „Datenlogger Pendeluhr“ · Mikrocontroller und Digitale Elektronik ·
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PDF
irf7401.pdf
0V DSS Drain-to-Source Leakage Current ––– ––– 25 µA V = 16V, V = 0V, T = 125 °C DS GS J I Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 12V GSS Gate-to-Source Reverse Leakage ––– ––– -100 V = -12V GS Qg Total Gate Charge ––– ––– 48 D = 4.1A Q Gate-to-Source Charge ––– ––– 5.1
in „kleiner FET“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RT8298E-02.pdf
All rights reserved. is a registered trademark of Richtek Technology Corporation. © www.richtek.com DS8298E-02 October 2015 8 RT8298E Switching Frequency vs. Temperature Current Limit vs. Temperature 650 12.0 )640 11.5 z630 k ) 11.0 (620 ( c t e610 e 10.5 u r e600 u 10.0 F t g590 p 9.5 i580 u c O 9.0
in „Schaltregler - maximaler Spulenstrom“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RT8298E-02.pdf
All rights reserved. is a registered trademark of Richtek Technology Corporation. © www.richtek.com DS8298E-02 October 2015 8 RT8298E Switching Frequency vs. Temperature Current Limit vs. Temperature 650 12.0 )640 11.5 z630 k ) 11.0 (620 ( c t e610 e 10.5 u r e600 u 10.0 F t g590 p 9.5 i580 u c O 9.0
in „Wahl des SynchrongleichrichterMOSFETs für Buck Converter“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
RT8298E-02.pdf
All rights reserved. is a registered trademark of Richtek Technology Corporation. © www.richtek.com DS8298E-02 October 2015 8 RT8298E Switching Frequency vs. Temperature Current Limit vs. Temperature 650 12.0 )640 11.5 z630 k ) 11.0 (620 ( c t e610 e 10.5 u r e600 u 10.0 F t g590 p 9.5 i580 u c O 9.0
in „Woher Eingangsschwingung am Buck“ · Analoge Elektronik und Schaltungstechnik ·
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PDF
182853-da-01-en-IRLR_8103V.pdf
/dt-inducedturn-onimmunity. The IRLR8103V offers an extremely low combination of IRLR8103V Q sw& R DS(on)r reduced losses in both control and R DS(on) 7.9m synchronous FET applications. Q G 27nC The package is designed for vapor phase, infra-red, Q 12nC convection, or wave soldering techniques. Power
in „Drehzahlmesser für Drehbank“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS2413.pdf
Match ? Y N Master TX Bit 63 Bit 63 N Match ? Y From Figure 10 st RC = 1 1 Part To Figure 10 1sPart 12 of 18 DS2413: 1-Wire Dual Channel Addressable Switch 1-Wire SIGNALING The DS2413 requires strict protocols to ensure data integrity. The protocol consists of four types of signaling on one line: Reset
in „OneWire Problem DS2413“ · Mikrocontroller und Digitale Elektronik ·
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PDF
DS2431-A1.pdf
0 RC = 0 N RC = 1? DS2431-A1 Tx DS2431-A1 Tx BIT 0 FAMILY CODE MASTER Tx BIT 0 DS2431-A1 Tx BIT 0 Y (1 BYTE) MASTER Tx BIT 0 N N MASTER Tx Y BIT 0 MATCH? BIT 0 MATCH? RESET? Y Y N DS2431-A1 Tx DS2431-A1 Tx BIT 1 SERIAL NUMBER
in „Hardware Erkennung leicht gemacht“ · Mikrocontroller und Digitale Elektronik ·
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enc28j60.pdf
is set ‘0’ = Bit is cleared x = Bit is unknown 2004 Microchip Technology Inc. Advance Information DS39662A-page 63 ENC28J60 NOTES: DS39662A-page 64 Advance Information 2004 Microchip Technology Inc. ENC28J60 12.0 INTERRUPTS When an enabled interrupt occurs, the interrupt pin will remain low until
in „ENC28J60 Resetpin“ · Mikrocontroller und Digitale Elektronik ·
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MIC94030BM4.PDF
Units VBDSS Drain-Source Breakdown VoltageV GS= 0V, D = 250 A 13.5 V VGS Gate Threshold Voltage V DS= VGS, D = 250 A 0.6 1.0 1.4 V I Gate-Body Leakage V = 0V, V = 12V, Note 2, Note 3 1 A GSS DS GS R Gate-Source Resistor V = 0V, V = 12V, Note 2, Note 4 500 750 1000 k GS DS GS C Input Capacitance V = 0V, V = 12V 100 pF ISS GS DS IDSS Zero Gate Voltage Drain CurrenV DS= 12V, VGS= 0V 25 A V DS= 12V, VGS= 0V, J = 125°C 0.010 250 A ID(ON) On-State Drain Current V DS= 10V, VGS= 10V, Note 5 6.3 A RDS(ON) Drain-Source
in „MOSFET ohne Body-Diode“ · Analoge Elektronik und Schaltungstechnik ·